JPH0366262A - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPH0366262A JPH0366262A JP1203063A JP20306389A JPH0366262A JP H0366262 A JPH0366262 A JP H0366262A JP 1203063 A JP1203063 A JP 1203063A JP 20306389 A JP20306389 A JP 20306389A JP H0366262 A JPH0366262 A JP H0366262A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- aperture
- image sensor
- state image
- sampling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
- Facsimile Scanning Arrangements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明はCCD等の固体撮像素子に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a solid-state imaging device such as a CCD.
[従来の技術]
従来、固体撮像素子は、1画素の開口形状の作成上の簡
易性から第2図(a)のように矩形間口のものや、第2
図(b)の如く特開昭53−124013にあるように
開口の大きさと撮像素子のサンプリングピッチより大き
くするために千鳥状に画素を配列したり、或いは第2図
(C)の如く開口形状をひし形にして構成されている。[Prior Art] Conventionally, solid-state image sensors have been made with a rectangular width as shown in FIG.
As shown in Fig. 2(b), pixels are arranged in a staggered manner to make the aperture size larger than the sampling pitch of the image sensor, as described in Japanese Patent Application Laid-Open No. 53-124013, or the aperture shape is shown in Fig. 2(c). It is made up of a diamond shape.
[発明が解決しようとしている課題]
ところが、従来例の固体撮像素子は開口を矩形開口にし
ているため読みとりのピッチ(サンプリングピッチ)を
決めると第2図(a)の如く必然的に固体撮像素子の開
口サイズが決まってしまう。[Problems to be Solved by the Invention] However, since the conventional solid-state image sensor has a rectangular aperture, when the reading pitch (sampling pitch) is determined, the solid-state image sensor inevitably The aperture size is determined.
しかも、実際ては、作成上の制約から希望する大きさよ
りも小さい開口のものが出来てしまう。Moreover, in reality, due to manufacturing constraints, the opening is smaller than the desired size.
このため固体撮像素子の解像可能な周波数領域が広がり
、サンプリング周波数以上の情報をとりこむ結果となる
。このため人力する画像情報が撮像素子の解像し得る周
波数成分以上の周波数を持つ場合、サンプリング周波数
と入力画像の周波数成分の間でビートを起こし、モアレ
を発生ずる(標本化定理より)
一般に画像信号がどのような周波数成分から構成されて
いるかを調べる手段として直交関数変換が知られている
この直交変換は、変換結果による低周波成分へのエネル
ギー分布の集中・高周波成分へのエツジ・線情報の反映
等の特徴がある。この直交変換として、一般的には離散
的なフーリエ変換が用いられる固体撮像素子のサンプリ
ング間隔をTとし、その関数をg (x)とすると、第
3図(a)に示すようになる。これをフーリエ変換する
と
G(ν)=f (g (x))
f:フーリエ変換記号
と式であられされる。空間周波数平面上では第3図(b
)に示すようになる。これに対して固体撮像素子の開口
を第2図(a)とした時に開口のサイズをaとし、撮像
素子内の分布をc (x)とすると第4図(a)のよう
に現わされる。これをフーリエ変換したものを第4図(
b)とする。For this reason, the resolvable frequency range of the solid-state image sensor expands, resulting in the acquisition of information higher than the sampling frequency. For this reason, if the manually generated image information has a frequency higher than the frequency components that can be resolved by the image sensor, a beat will occur between the sampling frequency and the frequency components of the input image, resulting in moiré (from the sampling theorem). Orthogonal function transformation is known as a means of investigating what kind of frequency components a signal is composed of.This orthogonal transformation is used to concentrate energy distribution on low frequency components, edge and line information on high frequency components as a result of the transformation. It has characteristics such as the reflection of As this orthogonal transformation, a discrete Fourier transform is generally used. Let T be the sampling interval of a solid-state image sensor, and let its function be g (x), as shown in FIG. 3(a). When this is Fourier transformed, G(ν)=f (g (x)) f: Fourier transform symbol and expression. On the spatial frequency plane, Figure 3 (b
). On the other hand, when the aperture of the solid-state image sensor is shown in Fig. 2(a), the size of the aperture is a, and the distribution inside the image sensor is c(x), it appears as shown in Fig. 4(a). Ru. The Fourier transform of this is shown in Figure 4 (
b).
第5図(a)には画像S (x)を示す。又第5図(b
)には第4図(a)に示す素子と第3図(a)に示すサ
ンプリング関数でS (x)をサンプリングした後の画
像を示す。これをフーリエ変換したものを第6図(a)
とする。第6図(a)に示す特性は素子の開口の大きさ
とサンプリング間隔の等しい場合でサンプリングした場
合である。FIG. 5(a) shows an image S(x). Also, Figure 5 (b
) shows an image after sampling S (x) using the element shown in FIG. 4(a) and the sampling function shown in FIG. 3(a). The Fourier transformed version of this is shown in Figure 6(a).
shall be. The characteristics shown in FIG. 6(a) are obtained when sampling is performed when the size of the aperture of the element and the sampling interval are equal.
しかし、実際にはサンプリングピッチに対して素子の開
口サイズが小さくなるため第6図(b)のように重なり
が発生しモアレの原因となる。第7図(a)は従来40
0dpi素子の平面図、第7図(b)はこの素子開口の
フーリエ変換後の波形を示し、第7図(C)は400d
pi読みとり時のMTF投光線図を示す。第7図(e)
中で隣り合う画素を主走査方向に161ines/mm
以上のところにMTF値が存在するのがわかる。However, in reality, since the aperture size of the element becomes smaller than the sampling pitch, overlapping occurs as shown in FIG. 6(b), causing moiré. Figure 7(a) shows the conventional 40
The plan view of the 0dpi element, FIG. 7(b) shows the waveform after Fourier transformation of the aperture of this element, and FIG. 7(C) shows the waveform of the 400dpi element.
The MTF projection line diagram at the time of pi reading is shown. Figure 7(e)
161 ines/mm for adjacent pixels in the main scanning direction
It can be seen that MTF values exist in the above locations.
これが重なりになる。This will overlap.
そこで、素子の開口サイズをサンプリング間隔より大き
くとる手段として第2図(b)のように素子の配列を千
鳥状に並べたり、第2図(c)のように、ひし形開口を
並べるという方法が行われている。Therefore, as a means of making the aperture size of the elements larger than the sampling interval, there is a method of arranging the elements in a staggered manner as shown in Figure 2(b) or arranging diamond-shaped apertures as shown in Figure 2(c). It is being done.
ところが第2図(b)のように千鳥状に゛配列すること
はラインセンサーを2ラインにしたのに等しく、上段と
下段の副走査方向の位置あわせを行うための制御を行う
必要がある。また、第2図(c)のようにひし形開口の
場合には、一対角線方向に開口が大きいが、地対角線方
向は開口が小さく、一方向しかモアレ除去の効果がない
。However, arranging them in a staggered manner as shown in FIG. 2(b) is equivalent to having two line sensors, and it is necessary to perform control to align the upper and lower rows in the sub-scanning direction. Further, in the case of a diamond-shaped aperture as shown in FIG. 2(c), the aperture is large in one diagonal direction, but the aperture is small in the ground diagonal direction, so that moiré removal is effective only in one direction.
[課題を解決するための手段]
本発明では、固体撮像素子の開口形状をサンプリング間
隔よりも大きくし、かつ隣接する素子の開口形状を異な
ったものにすることにより、モアレ除去を効果的に行っ
たものである。[Means for Solving the Problems] In the present invention, moire can be effectively removed by making the aperture shape of the solid-state image sensor larger than the sampling interval and by making the aperture shapes of adjacent elements different. It is something that
[実施例]
第1図には本発明の固体撮像素子の開口形状を示すPは
、サンプリング間隔を示し、aは素子の開口の大きさを
示す。[Example] FIG. 1 shows the shape of the aperture of the solid-state image sensing device of the present invention. P indicates the sampling interval, and a indicates the size of the aperture of the device.
第8図には本発明である固体撮像素子を用いたディジタ
ル読み取り装置を示す。読み取り開始ボタン(図示せず
)を押すと照明系3が原稿台ガラス1上の原稿2を照ら
し、読み取りユニット4が矢印の方向へ移動して、結像
レンズ5を介して、固体撮像素子6へと情報が伝達され
る。FIG. 8 shows a digital reading device using a solid-state image sensor according to the present invention. When a reading start button (not shown) is pressed, the illumination system 3 illuminates the original 2 on the original platen glass 1, the reading unit 4 moves in the direction of the arrow, and the solid-state image sensor 6 is scanned through the imaging lens 5. Information is transmitted to.
この時の読み取り能力を400dpi(dotper
1nch)とした時固体撮像素子の大きさは、第9図(
a−1)、(a−2)に示す様に主走査方向の最長が1
00μm、副走査方向の大きさと60μmとしている。The reading ability at this time is 400 dpi (dotper
1 nch), the size of the solid-state image sensor is shown in Figure 9 (
As shown in a-1) and (a-2), the longest length in the main scanning direction is 1.
00 μm, and the size in the sub-scanning direction is 60 μm.
この開口形状をフーリエ変換したものが第9図(b−1
)と(b−2)である。この図は空間周波数平面を表し
±401ines/mmの範囲での、フーリエ変換後の
値M T F (Modulation Transf
er Function)の等高線図を示す。Figure 9 (b-1
) and (b-2). This figure represents the spatial frequency plane and the value M T F after Fourier transform in the range of ±401 ines/mm.
er Function) is shown.
400dpi読み取りを行った時のMTFの図を第9図
(c−1)、 (c−2)に示す。Figures 9 (c-1) and (c-2) show MTF diagrams when reading at 400 dpi.
この結果図示の如く、読み取り素子の解像可能な空間周
波数特性を±161ines/mmの範囲内に抑えるこ
とができるようになるものである。尚第10図は本発明
の第2実施例を示す図でこのように平面開口を構成して
も良いことは言うまでもない。As a result, as shown in the figure, the resolvable spatial frequency characteristics of the reading element can be suppressed within the range of ±161 ines/mm. It should be noted that FIG. 10 is a diagram showing a second embodiment of the present invention, and it goes without saying that a plane opening may be configured in this manner.
[発明の効果]
以上説明したように、本発明によれば固体撮像素子の1
素子の開口形状を、素子の開口をサンプリングピッチ以
上にすることが可能となり、かつ、従来、ディジタル・
読み取りの際に発生したモアレ縞を除去することが可能
となる。[Effects of the Invention] As explained above, according to the present invention, one of the solid-state image sensors
It is now possible to make the aperture shape of the element larger than the sampling pitch, and it is possible to make the aperture shape of the element larger than the sampling pitch.
It becomes possible to remove moiré fringes that occur during reading.
また、1素子の開口を大きくすることにより、従来より
も受光面積が大きくなり光量を少なくすることが可能に
なり、かつ、熱処理等の問題も抑えられる効果がある。Furthermore, by increasing the aperture of one element, the light-receiving area becomes larger than before, making it possible to reduce the amount of light, and also having the effect of suppressing problems such as heat treatment.
第1図は本発明の固体撮像素子の開口構成例を示す図、
第2図(a)〜(C)は従来の固体撮像素子の開口構成
例を示す図、
第3図(a)はサンプリング間隔子の撮像素子の出力関
数図、
第3図(b)は第3図(a)のフーリエ変換後の図、
第4図(a)は開ロサイズaの素子の出力関数図、
第4図(b)は第4図(a)のフーリエ変換後の図、
第5図(a)は画像S (x)を示す図、第5図(b)
はS (x)を第4図(a)の素子で第3図(a)のサ
ンプリング関数でサンプリングした場合の図、
第6図(a)は第5図(b)をフーリエ変換した図、
第6図(b)は従来の欠点を示す図、
第7図(a)は従来の素子の平面開口例を示す図、
第7図(b)はそのMTF等高線図、
第7図(C)は読み取り走査時のMTF等高線図、
第8図は読取り走査系の例を示す図、
第9図(a−1)、(a−2)は本発明の素子の開口例
を示す図、
第9図(b−1)、(b−2)はそのMTF等高線図、
第9図(c−1)、(c−2)は走査時のMTF等高線
図である。
第10図は本発明の第2の実施例を示す図である。
α〉P
特開平
3
66262 (4)
り
へ
(λ−7)
CCD形吠゛
(a−2)
Itlt/7u釧Figure 1 is a diagram showing an example of the aperture configuration of a solid-state image sensor of the present invention, Figures 2 (a) to (C) are diagrams showing an example of the aperture configuration of a conventional solid-state image sensor, and Figure 3 (a) is a sampling diagram. Figure 3(b) is a diagram of the output function of a spacer image sensor, Figure 3(b) is a diagram after Fourier transformation of Figure 3(a), Figure 4(a) is an output function diagram of an element with aperture size a, Figure 4 (b) is a diagram after Fourier transformation of Figure 4 (a), Figure 5 (a) is a diagram showing image S (x), Figure 5 (b)
is a diagram when S (x) is sampled with the element in Figure 4 (a) using the sampling function in Figure 3 (a), Figure 6 (a) is a diagram obtained by Fourier transforming Figure 5 (b), Fig. 6(b) is a diagram showing the drawbacks of the conventional device, Fig. 7(a) is a diagram showing an example of the planar aperture of the conventional element, Fig. 7(b) is its MTF contour diagram, and Fig. 7(C) is an MTF contour diagram during reading scanning; FIG. 8 is a diagram showing an example of a reading scanning system; FIGS. Figures (b-1) and (b-2) are MTF contour diagrams, and Figures 9 (c-1) and (c-2) are MTF contour diagrams during scanning. FIG. 10 is a diagram showing a second embodiment of the present invention. α〉P JP-A-3 66262 (4) Rihe (λ-7) CCD type bar (a-2) Itlt/7u
Claims (2)
体撮像素子において、単位画素の開口の主走査方向のア
パーチャー長をセンサの主走査方向のサンプリング間隔
より大きく、かつ、隣り合う画素の開口形状が異なって
いることを特徴とする固体撮像素子。(1) In solid-state imaging devices such as CCD sensors that convert optical information into electrical signals, the aperture length in the main scanning direction of the aperture of a unit pixel is larger than the sampling interval in the main scanning direction of the sensor, and the apertures of adjacent pixels A solid-state image sensor characterized by different shapes.
とを特徴とする特許請求の範囲第(1)項記載の固体撮
像素子。(2) The solid-state imaging device according to claim (1), wherein the unevenness of the side surfaces of adjacent pixels are made to match.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1203063A JPH0366262A (en) | 1989-08-04 | 1989-08-04 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1203063A JPH0366262A (en) | 1989-08-04 | 1989-08-04 | solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0366262A true JPH0366262A (en) | 1991-03-20 |
Family
ID=16467723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1203063A Pending JPH0366262A (en) | 1989-08-04 | 1989-08-04 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0366262A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03109859A (en) * | 1989-09-25 | 1991-05-09 | Matsushita Graphic Commun Syst Inc | Image pickup device |
| WO2004021698A1 (en) * | 2002-08-30 | 2004-03-11 | Philips Intellectual Property & Standards Gmbh | Detector arrangement |
-
1989
- 1989-08-04 JP JP1203063A patent/JPH0366262A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03109859A (en) * | 1989-09-25 | 1991-05-09 | Matsushita Graphic Commun Syst Inc | Image pickup device |
| WO2004021698A1 (en) * | 2002-08-30 | 2004-03-11 | Philips Intellectual Property & Standards Gmbh | Detector arrangement |
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