JPH0367246B2 - - Google Patents
Info
- Publication number
- JPH0367246B2 JPH0367246B2 JP60024015A JP2401585A JPH0367246B2 JP H0367246 B2 JPH0367246 B2 JP H0367246B2 JP 60024015 A JP60024015 A JP 60024015A JP 2401585 A JP2401585 A JP 2401585A JP H0367246 B2 JPH0367246 B2 JP H0367246B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- thin film
- liquid crystal
- crystal display
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 51
- 239000010409 thin film Substances 0.000 claims description 33
- 239000004973 liquid crystal related substance Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 230000005611 electricity Effects 0.000 description 11
- 230000003068 static effect Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 other than Ta Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
(イ) 発明の目的
〔産業上の利用分野〕
この発明は液晶表示素子の製造方法に係り、と
くに各表示電極に電気絶縁性薄膜を介して電気信
号を与える構造を有する液晶表示素子の製造方法
に関する。[Detailed Description of the Invention] (a) Purpose of the Invention [Field of Industrial Application] The present invention relates to a method for manufacturing a liquid crystal display element, and particularly relates to a method for manufacturing a liquid crystal display element, and particularly to a method for producing a liquid crystal display element, and particularly relates to a method of manufacturing a liquid crystal display element, and particularly to a method for producing a liquid crystal display element, and particularly relates to a method of manufacturing a liquid crystal display element, and particularly to a method for producing a liquid crystal display element. The present invention relates to a method of manufacturing a liquid crystal display element having the following.
基板上の表示電極に金属−絶縁膜−金属構造を
有する非線形抵抗素子(Metal−Insulator−
Metal素子、以後MIM素子と略称する)を介し
て電気信号を供給する液晶表示素子が、一般的に
使用されるようになつてきている。このMIM素
子は、基板上において表示電極への信号を供給す
る導電体の途中に電気絶縁性薄膜を介在させるこ
とによつて形成される。そして、MIM素子は、
導電体への入力信号の電圧が小さいときに高抵抗
となり、入力信号の電圧が液晶表示を行なうよう
に充分な高さの電圧が印加されたとき低抵抗とな
る非線型的な特性を有し、液晶の駆動時におい
て、隣接する表示電極に電気信号がもれる、いわ
ゆるクロストークの電圧の発生を防止する作用を
有する。
A nonlinear resistance element (Metal-Insulator-) having a metal-insulating film-metal structure on the display electrode on the substrate
Liquid crystal display elements that supply electrical signals via metal elements (hereinafter abbreviated as MIM elements) are becoming commonly used. This MIM element is formed by interposing an electrically insulating thin film in the middle of a conductor that supplies signals to display electrodes on a substrate. And the MIM element is
It has non-linear characteristics such that it has high resistance when the voltage of the input signal to the conductor is small, and low resistance when the voltage of the input signal is high enough to produce a liquid crystal display. , has the effect of preventing the generation of so-called crosstalk voltage, in which electrical signals leak to adjacent display electrodes when the liquid crystal is driven.
ところで、液晶表示素子の基板の製造時には最
終的に基板上に配向膜を形成し、配向膜の表面に
ラビング法により配向処理を施す。 Incidentally, when manufacturing a substrate for a liquid crystal display element, an alignment film is finally formed on the substrate, and the surface of the alignment film is subjected to an alignment treatment by a rubbing method.
このとき前述のMIM素子を形成する絶縁性薄
膜の厚みは300Å〜700Åであるように形成されて
いるため、前述の配向処理において発生した静電
気が、極めて高い確率でこの絶縁性薄膜を破壊す
る。そして、これによつて、MIM素子が短絡し
てしまうので、駆動時にMIM素子を用いてクロ
ストーク電圧の発生を防ぐという効果が実現でき
なくなるという問題があつた。またこの静電気を
除去するために基板あるいは前述のラビング法に
おけるラビング材などに、それらを介して静電気
を逃がすための回路を設ける方法も用いられてい
るが、充分な効果を得ていない。
At this time, since the thickness of the insulating thin film forming the above-mentioned MIM element is formed to be 300 Å to 700 Å, the static electricity generated in the above-mentioned alignment process has an extremely high probability of destroying this insulating thin film. As a result, the MIM element is short-circuited, so there is a problem that the effect of preventing the generation of crosstalk voltage by using the MIM element during driving cannot be realized. In addition, in order to remove this static electricity, a method of providing a circuit for discharging static electricity through the substrate or the rubbing material used in the above-mentioned rubbing method has been used, but this method has not been sufficiently effective.
この発明は、絶縁性薄膜を介して各表示電極に
電気信号を与えるようにした構造を有する液晶表
示素子が、配向処理時に発生する静電気によつて
破壊されることを防ぐ液晶表示素子の量産に適し
た製造方法を提供するものである。 This invention is aimed at mass production of liquid crystal display elements that prevent liquid crystal display elements having a structure in which electrical signals are applied to each display electrode through an insulating thin film from being destroyed by static electricity generated during alignment processing. This provides a suitable manufacturing method.
(ロ) 発明の構成
この発明による液晶表示素子の製造方法は、液
晶表示素子の基板上に、複数の表示電極と、接地
導電体と、その各表示電極をその接地導電体に接
続する接続導電体とを同時にパターンに形成し、
電気信号を供給する第1導電体と、この第1導電
体から電気絶縁性薄膜を介在させて前記各表示電
極に電気信号を与える第2導電体からなる回路を
形成し、その後基板表面全体に配向用薄膜を形成
し、前記接地導電体を接地した状態で、その配向
用薄膜上に配向処理を施し、次に前記接続導電体
を切断する、ことを特徴とする。(B) Structure of the Invention The method for manufacturing a liquid crystal display element according to the present invention includes a method for manufacturing a liquid crystal display element, which includes a plurality of display electrodes, a ground conductor, and a connecting conductor that connects each display electrode to the ground conductor on a substrate of the liquid crystal display element. Forming a pattern with the body at the same time,
A circuit consisting of a first conductor for supplying an electric signal and a second conductor for supplying an electric signal to each of the display electrodes from the first conductor with an electrically insulating thin film interposed therebetween is formed, and then a circuit is formed over the entire surface of the substrate. The present invention is characterized in that a thin film for alignment is formed, an alignment treatment is performed on the thin film for alignment while the ground conductor is grounded, and then the connecting conductor is cut.
前記基板材料の具体例としてホウケイ酸ガラ
ス、セラミツクス、シリコンウエフアなどが挙げ
られる。このときナトリウムガラスを用いてもよ
いが、この場合には、表面に二酸化シリコン
SiO2などの絶縁膜を形成しておく処理が必要で
ある。 Specific examples of the substrate material include borosilicate glass, ceramics, silicon wafer, and the like. At this time, sodium glass may be used, but in this case, silicon dioxide on the surface
A process to form an insulating film such as SiO 2 is required.
前記第1導電体としてはタンタルTa、クロム
Cr、アルミニウムAlなどを用いることができる。
ただし製造されたMIM型液晶表示素子の作動の
安定性を考慮するとTaが好適である。 The first conductor is tantalum Ta or chromium.
Cr, aluminum Al, etc. can be used.
However, considering the stability of operation of the manufactured MIM type liquid crystal display element, Ta is preferable.
また前記絶縁性薄膜を形成する場合に陽極酸化
法を用いると、得られる絶縁性薄膜はTa2O5とな
る。フオトリソグラフイツク法などを用いてパタ
ーン形成する場合は、それが酸化アルミニウム
Al2O3などの他の絶縁材料であつてもよい。 Further, when an anodic oxidation method is used to form the insulating thin film, the obtained insulating thin film becomes Ta 2 O 5 . When forming patterns using photolithographic methods, the pattern is formed using aluminum oxide.
It may also be other insulating materials such as Al2O3 .
前記第2導電体にはTaの他にニツケルNi、ク
ロムCr、銀Ag、銅Cu、金Auなどを用いてもよ
い。一般的には、Ta、Ni、Crが多く用いられ
る。 For the second conductor, other than Ta, nickel (Ni), chromium (Cr), silver (Ag), copper (Cu), gold (Au), etc. may be used. Generally, Ta, Ni, and Cr are often used.
また前記第1および第2導電体の材料として
Taを用い、前記絶縁性薄膜の材料としてTa2O5
を用いる組合せが最も好ましい。 Also, as a material for the first and second conductors,
Ta is used, and Ta 2 O 5 is used as the material of the insulating thin film.
Most preferred is a combination using
また前記の表示電極、接地導電体および接続導
電体にはIn2O3を用いることが好ましいが他に酸
化スズSnO2、Al、Ag、Cuなどを用いてもよい。 Further, it is preferable to use In 2 O 3 for the display electrode, the ground conductor, and the connecting conductor, but other materials such as tin oxide SnO 2 , Al, Ag, and Cu may also be used.
また前記配向用薄膜にはSiO2を用いることが
好ましいが、ポリイミド膜やフツ化マグネシウム
MgF2などの他の絶縁性を有する材料を用いても
よい。 Although it is preferable to use SiO 2 for the alignment thin film, polyimide film or magnesium fluoride film may also be used.
Other insulating materials such as MgF 2 may also be used.
以下図面に示す実施例に基づいてこの発明を詳
述する。なおこれによつてこの発明が限定される
ものではない。
The present invention will be described in detail below based on embodiments shown in the drawings. Note that this invention is not limited to this.
第1図は、この発明による製造方法によつて製
造した液晶表示素子の一部分を示す断面図であ
る。1は基板、2は表示電極、3は電気信号を供
給する第1導電体、4は電気絶縁性薄膜、5は薄
膜4を介して電気信号を表示電極2に与える第2
導電体である。基板1の表面にはMIM素子6が
形成されており、MIM素子6を含む基板1の表
面には配向処理を施した配向用薄膜8が形成され
ている。対向基板1aには、第1図の紙面に平行
な帯状電極2aが形成され、帯状電極2aを含む
対向基板1aの表面にも配向処理を施した配向用
薄膜8aが形成されている。これらの配向用薄膜
8,8aに挟まれる空間部に液晶7が封入されて
いる。 FIG. 1 is a sectional view showing a portion of a liquid crystal display element manufactured by the manufacturing method according to the present invention. 1 is a substrate, 2 is a display electrode, 3 is a first conductor for supplying an electric signal, 4 is an electrically insulating thin film, and 5 is a second conductor for supplying an electric signal to the display electrode 2 via the thin film 4.
It is a conductor. A MIM element 6 is formed on the surface of the substrate 1, and an alignment thin film 8 subjected to an alignment treatment is formed on the surface of the substrate 1 including the MIM element 6. A strip-shaped electrode 2a parallel to the paper plane of FIG. 1 is formed on the counter substrate 1a, and an alignment thin film 8a that has been subjected to an alignment treatment is also formed on the surface of the counter substrate 1a including the strip-shaped electrode 2a. A liquid crystal 7 is sealed in a space sandwiched between these alignment thin films 8 and 8a.
このような構成を有する液晶表示素子は、いわ
ゆるドツトマトリツクス方式に従う駆動方式であ
る。この方式は情報表示手段として液晶表示素子
に求められている、表示単位の高密度化、表示画
面の高密度化などの要請に対応する方策の一つで
ある。 A liquid crystal display element having such a configuration is driven by a so-called dot matrix method. This method is one of the measures to meet the demands of liquid crystal display elements as information display means, such as higher density display units and higher density display screens.
次に、第2図〜第5図を用いてこの発明による
液晶表示素子の製造工程の一実施例を説明する。 Next, an embodiment of the manufacturing process of a liquid crystal display element according to the present invention will be described using FIGS. 2 to 5.
まず、第1工程において第2図aに平面図を、
第2図bにそのA−A矢視断面図を示すように、
たとえばホウケイ酸ガラスなどの材料から形成さ
れた基板1の表面に、複数の表示電極2と、接地
導電体9と、表示電極2を接地導電体9に接続す
る接続導電体10を透明導電膜によつてパターン
形成する。この透明導電膜はたとえば酸化インジ
ウムIn2O3などによつて形成する。 First, in the first step, the plan view is shown in Figure 2a,
As shown in FIG. 2b, a cross-sectional view taken along the line A-A,
For example, on the surface of a substrate 1 made of a material such as borosilicate glass, a plurality of display electrodes 2, a ground conductor 9, and a connection conductor 10 connecting the display electrodes 2 to the ground conductor 9 are formed using a transparent conductive film. Twist to form a pattern. This transparent conductive film is formed of, for example, indium oxide In 2 O 3 or the like.
次に、第2工程において、第3図aに平面図
を、第3図bにそのB−B矢視断面図を示すよう
に、外部からの電気信号を導入する第1導電体3
をパターン形成する。このとき第1導電体3は、
たとえばタンタルTaなどの金属材料で形成し、
2000Å〜4000Åの厚みに、その延在方向とは 垂
直方向の断面が略台形を成すようにパターン形成
する。このようなパターン形成にはフオトリソグ
ラフイツク技術とプラズマ排下法や反応性イオン
エツチング(RIE)法などを組み合せた技術が多
く用いられる。さらに、陽極酸化法で第1導電体
3の表面に厚さ2000Å〜4000Åの五酸化タンタル
Ta2O5の薄膜を絶縁性薄膜4として形成する。た
だし、第1導電体3のうちMIM素子6(第1図)
を形成する領域には、あらかじめフオトレジスト
などの感光性材料を形成しておき、前記処理の後
そのフオトレジストを除去して、その部分に厚さ
300Å〜700ÅTa2O5の薄膜を形成する。そして、
第4図aに平面図を、第4図bにそのC−C矢視
断面図を示すように、第1導電体3を絶縁性薄膜
4を介して表示電極2に接続する第2導電体5を
形成する。このとき前述したように第2導電体5
と絶縁性薄膜4と第1導電体3とは、液晶表示素
子の駆動時において非線型的特性を有するMIM
素子としての機能を有することができる。ここで
非線型的特性とは、第1導電体への入力信号の電
圧が小さいときに高抵抗となり、入力信号の電圧
が液晶表示を行なうに充分な高さの電圧が印加さ
れたとき低抵抗となるような抵抗値に関する特性
である。換言すれば、いわゆるプール・フランケ
ル効果を有する電圧V−電流I特性のことであ
り、それは、kおよびβを定数とするとき、
I=k・V・exp(β√)
で表わされる。なお第2導電体5は、たとえばタ
ンタルTaなどの材料で形成される。 Next, in the second step, as shown in a plan view in FIG. 3a and a sectional view taken along the line B-B in FIG.
form a pattern. At this time, the first conductor 3 is
For example, it is formed from a metal material such as tantalum Ta,
A pattern is formed to a thickness of 2000 Å to 4000 Å so that the cross section in the direction perpendicular to the extending direction forms a substantially trapezoidal shape. For forming such patterns, techniques that combine photolithography, plasma evacuation, reactive ion etching (RIE), and the like are often used. Furthermore, tantalum pentoxide with a thickness of 2000 Å to 4000 Å is applied to the surface of the first conductor 3 using an anodizing method.
A thin film of Ta 2 O 5 is formed as the insulating thin film 4 . However, the MIM element 6 (Fig. 1) of the first conductor 3
A photosensitive material such as a photoresist is previously formed in the area where the area is to be formed, and after the above treatment, the photoresist is removed and a thickness is applied to the area.
A thin film of 300 Å to 700 Å Ta 2 O 5 is formed. and,
As shown in FIG. 4a in a plan view and in FIG. form 5. At this time, as mentioned above, the second conductor 5
, the insulating thin film 4 and the first conductor 3 are MIMs that have non-linear characteristics when driving the liquid crystal display element.
It can have a function as an element. Here, nonlinear characteristics mean that when the voltage of the input signal to the first conductor is small, the resistance becomes high, and when the voltage of the input signal is high enough to display a liquid crystal display, the resistance becomes low. This is a characteristic related to the resistance value such that In other words, it is a voltage V-current I characteristic having the so-called Poole-Frankel effect, which is expressed as I=k·V·exp(β√), where k and β are constants. Note that the second conductor 5 is made of a material such as tantalum Ta.
次に第3工程において、前述の工程を終了した
基板1の表面全体にわたつて、配向用薄膜8を形
成する。配向用薄膜8はたとえば二酸化シリコン
SiO2などから形成される。そこで、接地導電体
9を接地した上で、配向用薄膜8の表面に配向処
理を行なう。ここで配向処理の方法は前述したよ
うにラビング法が多く用いられており、したがつ
て絶縁材料から成る配向用薄膜8の両表面に摩擦
により静電気が発生する。発生した静電気は配向
用薄膜8と接触する表示電極2と接地導電体9と
第2導電体5と接続導電体10とに導びかれる
が、表示電極2と接続導電体10と接地導電体9
とが構成する直列回路を介して、接地導電体9が
接続される外部接地へ放出される。こうして約数
1000V/cmの電界を有することもある静電気によ
るMIM素子6の形成領域の絶縁性薄膜4の破壊
が防がれる。 Next, in a third step, an alignment thin film 8 is formed over the entire surface of the substrate 1 that has undergone the above-described steps. The alignment thin film 8 is made of silicon dioxide, for example.
Formed from SiO 2 etc. Therefore, after grounding the ground conductor 9, the surface of the alignment thin film 8 is subjected to alignment treatment. As described above, the rubbing method is often used for the orientation treatment, and therefore static electricity is generated due to friction on both surfaces of the orientation thin film 8 made of an insulating material. The generated static electricity is led to the display electrode 2, the ground conductor 9, the second conductor 5, and the connection conductor 10 that are in contact with the alignment thin film 8;
is discharged to the external ground to which the ground conductor 9 is connected via a series circuit constituted by. Thus the divisor
This prevents destruction of the insulating thin film 4 in the region where the MIM element 6 is formed due to static electricity, which may have an electric field of 1000 V/cm.
次に第4工程において、第5図aに平面図を、
第5図bにそのD−D矢視断面図を示すように、
基板1の接続導電体10を切断する。この切断
は、たとえばイツトリウム・アルミニウム・ガー
ネツト(YAG、以後YAGと略称する)結晶など
を用いたYAGレーザー装置(図示せず)によつ
て行なう。従つて表示電極2は、第2導電体5と
MIM素子6を介してのみ、第1導電体3に接続
される回路を構成する。このようにして、静電気
によるMIM素子6が破壊されることが防止され、
換言すると第1導電体3と第2導電体5とが直接
導通することなく、プール・フランケル効果をも
つMIM素子6を含んだ液晶表示素子を製造する
ことができる。このとき接続導電体10の切除に
伴い切除部分を被覆している配向用薄膜8も切除
されることになるがこの切除部分の幅は1μm〜
2μm程度であり、配向処理によつて実現される
全体としての配向効果に対する影響は無視できる
程度であることが確められている。 Next, in the fourth step, a plan view is shown in FIG.
As shown in FIG. 5b, a sectional view taken along line D-D,
The connecting conductor 10 of the substrate 1 is cut. This cutting is performed by a YAG laser device (not shown) using, for example, yttrium aluminum garnet (YAG, hereinafter abbreviated as YAG) crystal. Therefore, the display electrode 2 and the second conductor 5
A circuit connected to the first conductor 3 only via the MIM element 6 is configured. In this way, the MIM element 6 is prevented from being destroyed by static electricity,
In other words, a liquid crystal display element including an MIM element 6 having the Poole-Frankel effect can be manufactured without direct electrical conduction between the first conductor 3 and the second conductor 5. At this time, as the connecting conductor 10 is removed, the alignment thin film 8 covering the removed portion is also removed, and the width of this removed portion is 1 μm to 1 μm.
The thickness is approximately 2 μm, and it has been confirmed that the influence on the overall alignment effect achieved by the alignment treatment is negligible.
また、前述の実施例の工程順序を変更し、前述
の第2工程と第3工程の間で第1工程を実施して
もよく、同等の効果が得られる。この場合、第1
および第2導電体3,5の表面に接続導電体10
や表示電極2などが透明導電膜によつて形成さ
れ、第4図bに対応する基板2の断面は第6図a
に、第5図bに対応する基板2の断面は第6図b
に示すようになる。 Furthermore, the same effect can be obtained by changing the order of steps in the above-described embodiment and implementing the first step between the second and third steps described above. In this case, the first
and a connecting conductor 10 on the surface of the second conductors 3 and 5.
The display electrodes 2 and the like are formed of transparent conductive films, and the cross section of the substrate 2 corresponding to FIG. 4b is shown in FIG. 6a.
The cross section of the substrate 2 corresponding to FIG. 5b is shown in FIG. 6b.
It becomes as shown in .
このようにしてラビング法による配向処理時に
発生する静電気が充分に外部に放出され、MIM
素子を構成する絶縁性薄膜4の破壊は確実に防止
される。 In this way, the static electricity generated during the alignment process using the rubbing method is sufficiently discharged to the outside, and the MIM
Destruction of the insulating thin film 4 constituting the element is reliably prevented.
さらにその製造工程については、静電気を放出
する回路の構成が第2図に示すように簡単であ
り、その回路の製作は前述の第1工程のように一
回の工程で同時に行われるので、設備が単純化さ
れ工数が大きく低減される。 Furthermore, regarding the manufacturing process, the configuration of the circuit that discharges static electricity is simple as shown in Figure 2, and the circuit is manufactured at the same time in a single process like the first process described above. is simplified and the number of man-hours is greatly reduced.
(ハ) 発明の効果
この発明によれば、配向処理時に配向膜表面に
発生する静電気を、接地回路によつて充分に基板
外部に放出すので、配向処理時に生ずる電気絶縁
性薄膜の破壊が確実に防止される。さらに、この
接地回路は、構成が簡単であり、単純な工程で製
作される。従つて、少ない工数、高い歩留りで、
ドツトマトリツクス方式などの表示方式に対応で
きる液晶表示素子を製造することが可能となる。(c) Effects of the Invention According to the present invention, the static electricity generated on the surface of the alignment film during the alignment process is sufficiently discharged to the outside of the substrate by the grounding circuit, so that the breakdown of the electrically insulating thin film that occurs during the alignment process is ensured. is prevented. Furthermore, this grounding circuit has a simple configuration and is manufactured through a simple process. Therefore, with less man-hours and high yield,
It becomes possible to manufacture a liquid crystal display element that is compatible with a display method such as a dot matrix method.
第1図はこの発明に係る製造方法によつて製造
された液晶表示素子の断面図、第2図〜第5図は
この発明の一実施例の製造工程を示す図で、aは
平面図、bはaのそれぞれA−A,B−B,C−
C,D−D矢視断面図、第6図はこの発明の他の
製造工程を示す断面図である。
1……基板、2……表示電極、3……第1導電
体、4……電気絶縁性薄膜、5……第2導電体、
6……MIM素子、7……液晶、8……配向膜、
9……接地導電体、10……接続導電体。
FIG. 1 is a cross-sectional view of a liquid crystal display element manufactured by the manufacturing method according to the present invention, and FIGS. 2 to 5 are views showing the manufacturing process of an embodiment of the present invention, in which a is a plan view; b is A-A, B-B, C- of a, respectively
C, DD arrow sectional views, and FIG. 6 are sectional views showing other manufacturing steps of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Display electrode, 3... First conductor, 4... Electrically insulating thin film, 5... Second conductor,
6...MIM element, 7...Liquid crystal, 8...Alignment film,
9...Grounding conductor, 10...Connecting conductor.
Claims (1)
電極と、接地導電体と、その各表示電極をその
接地導電体に接続する接続導電体とを同時にパ
ターン形成し、 (b) 前記各表示電極に電気絶縁性薄膜を介在させ
て電気信号を与える回路を形成し、 (c) その後、前記各電極と前記各導電体と前記回
路を含む基板表面全体に配向用薄膜を形成し、
前記接地導電体を接地した状態で、前記配向用
薄膜上に配向処理を施し、 (d) 次に、前記接続導電体を切断する、 ことを特徴とする液晶表示素子の製造方法。[Claims] 1 (a) Simultaneously pattern forming a plurality of display electrodes, a ground conductor, and a connecting conductor that connects each display electrode to the ground conductor on a substrate for a liquid crystal display element. (b) interposing an electrically insulating thin film on each of the display electrodes to form a circuit that provides an electrical signal; (c) then oriented the entire surface of the substrate including each of the electrodes, each of the conductors, and the circuit; forming a thin film for
A method for manufacturing a liquid crystal display element, comprising: performing an alignment treatment on the alignment thin film while the ground conductor is grounded; (d) then cutting the connecting conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60024015A JPS61183620A (en) | 1985-02-09 | 1985-02-09 | Manufacturing method of liquid crystal display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60024015A JPS61183620A (en) | 1985-02-09 | 1985-02-09 | Manufacturing method of liquid crystal display element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183620A JPS61183620A (en) | 1986-08-16 |
| JPH0367246B2 true JPH0367246B2 (en) | 1991-10-22 |
Family
ID=12126718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60024015A Granted JPS61183620A (en) | 1985-02-09 | 1985-02-09 | Manufacturing method of liquid crystal display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183620A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6258226A (en) * | 1985-09-09 | 1987-03-13 | Seiko Epson Corp | Liquid crystal display body |
| DE69202893T2 (en) * | 1991-03-20 | 1995-11-02 | Toshiba Kawasaki Kk | Liquid crystal display device. |
-
1985
- 1985-02-09 JP JP60024015A patent/JPS61183620A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61183620A (en) | 1986-08-16 |
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