JPH0369899U - - Google Patents

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Publication number
JPH0369899U
JPH0369899U JP13155089U JP13155089U JPH0369899U JP H0369899 U JPH0369899 U JP H0369899U JP 13155089 U JP13155089 U JP 13155089U JP 13155089 U JP13155089 U JP 13155089U JP H0369899 U JPH0369899 U JP H0369899U
Authority
JP
Japan
Prior art keywords
refractive index
insulating layer
layer
back surface
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13155089U
Other languages
Japanese (ja)
Other versions
JPH0733433Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13155089U priority Critical patent/JPH0733433Y2/en
Publication of JPH0369899U publication Critical patent/JPH0369899U/ja
Application granted granted Critical
Publication of JPH0733433Y2 publication Critical patent/JPH0733433Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の薄膜EL素子の部分断面図、
第2図aおよびbは実施例1における前面絶縁層
および背面絶縁層に入射する発光層からの光の波
長と反射率の関係を示す線図、第3図aおよびb
は実施例2における前面絶縁層および背面絶縁層
に入射する発光層からの光の波長と反射率の関係
を示す線図、第4図a及びbは実施例3における
前面絶縁層および背面絶縁層に入射する発光層か
らの光の波長と反射率の関係を示す線図、第5図
は駆動電圧による輝度の変化を示す線図、第6図
は発光時間に対する輝度の変化を示す線図、第7
図は従来の薄膜EL素子の断面図である。 1……基板、2……前面電極層、3……前面絶
縁層、31……前面高屈折率絶縁層、32……前
面低屈折率絶縁層、4……発光層、5……背面絶
縁層、51……背面低屈折率絶縁層、52……背
面高屈折率絶縁層、6……背面絶縁層。
FIG. 1 is a partial cross-sectional view of the thin film EL device of the present invention.
Figure 2 a and b are diagrams showing the relationship between the wavelength and reflectance of light from the light emitting layer that enters the front insulating layer and the back insulating layer in Example 1, and Figure 3 a and b
4 is a diagram showing the relationship between the wavelength of light from the light emitting layer and the reflectance that is incident on the front insulating layer and the back insulating layer in Example 2, and FIG. 4 a and b are the front insulating layer and the back insulating layer in Example 3. A diagram showing the relationship between the wavelength of light from the light emitting layer incident on the light emitting layer and the reflectance, FIG. 5 is a diagram showing changes in brightness due to driving voltage, and FIG. 6 is a diagram showing changes in brightness with respect to light emission time. 7th
The figure is a cross-sectional view of a conventional thin film EL element. 1... Substrate, 2... Front electrode layer, 3... Front insulating layer, 31... Front high refractive index insulating layer, 32... Front low refractive index insulating layer, 4... Light emitting layer, 5... Back insulating layer. Layers, 51... Back surface low refractive index insulating layer, 52... Back surface high refractive index insulating layer, 6... Back surface insulating layer.

Claims (1)

【実用新案登録請求の範囲】 透明な基板と、前記基板の裏面に形成された透
明な前面電極層と、少なくとも低屈折率層と高屈
折率層の2層以上の屈折率の異なる絶縁層からな
り前記前面電極層の上に形成された前面絶縁層と
、前記前面絶縁層の上に形成された発光層と、少
なくとも低屈折率層と高屈折率層の2層以上の屈
折率の異なる絶縁層からなり前記発光層の上に形
成された背面絶縁層と、前記背面絶縁層の上に形
成された背面絶縁層とからなり、光が入射する媒
体となる前記発光層もしくは前記前面または背面
の低屈折率または高屈折率絶縁層の屈折率をno
、光が透過する薄膜となる前記前面または背面の
低屈折率または高屈折率絶縁層の屈折率をn、光
が透過する薄膜を支持する基板となる前記前面ま
たは背面の低屈折率または高屈折率絶縁層または
前記前面または背面電極層の屈折率をns、光が
透過する薄膜となる前記前面または背面の低屈折
率または高屈折率絶縁層の膜厚をd、前記発光層
の発光ピーク波長をλとした場合、 no<n>
nsまたは no>n<ns であつて、次式 n・d=(2N)λ/4 または n・d=(2N−1)λ/4 (ただし、Nは自然数) を満足することを特徴とする薄膜EL素子。
[Claims for Utility Model Registration] A transparent substrate, a transparent front electrode layer formed on the back surface of the substrate, and at least two insulating layers having different refractive indexes, a low refractive index layer and a high refractive index layer. A front insulating layer formed on the front electrode layer, a light emitting layer formed on the front insulating layer, and at least two insulating layers having different refractive indexes: a low refractive index layer and a high refractive index layer. a back insulating layer formed on the light emitting layer, and a back insulating layer formed on the back insulating layer, the light emitting layer or the front or back surface serving as a medium into which light enters. The refractive index of the low refractive index or high refractive index insulating layer is no.
, n is the refractive index of the low refractive index or high refractive index insulating layer on the front or back surface that becomes a thin film through which light passes, and the low refractive index or high refractive index on the front or back surface that becomes a substrate that supports the thin film through which light passes. The refractive index of the index insulating layer or the front or back electrode layer is ns, the thickness of the low refractive index or high refractive index insulating layer on the front or back surface that becomes a thin film through which light passes is d, and the emission peak wavelength of the light emitting layer. If λ is no<n>
ns or no>n<ns and satisfies the following formula n・d=(2N)λ/4 or n・d=(2N−1)λ/4 (where N is a natural number). Thin film EL element.
JP13155089U 1989-11-10 1989-11-10 Thin film EL device Expired - Fee Related JPH0733433Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13155089U JPH0733433Y2 (en) 1989-11-10 1989-11-10 Thin film EL device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13155089U JPH0733433Y2 (en) 1989-11-10 1989-11-10 Thin film EL device

Publications (2)

Publication Number Publication Date
JPH0369899U true JPH0369899U (en) 1991-07-11
JPH0733433Y2 JPH0733433Y2 (en) 1995-07-31

Family

ID=31679051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13155089U Expired - Fee Related JPH0733433Y2 (en) 1989-11-10 1989-11-10 Thin film EL device

Country Status (1)

Country Link
JP (1) JPH0733433Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994007344A1 (en) * 1992-09-22 1994-03-31 Hitachi, Ltd. Organic luminescent element and its substrate
JP2012044906A (en) * 2010-08-25 2012-03-08 Etsuko Oike Cat toilet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994007344A1 (en) * 1992-09-22 1994-03-31 Hitachi, Ltd. Organic luminescent element and its substrate
JP2012044906A (en) * 2010-08-25 2012-03-08 Etsuko Oike Cat toilet

Also Published As

Publication number Publication date
JPH0733433Y2 (en) 1995-07-31

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