JPH0370132A - Film formation etching device - Google Patents

Abstract

PURPOSE:To remove a deposit material on an exposed part by hydrofluoric acid without damaging a flame-sprayed film or a base metal, to enable reproduction, and to improve durability by forming an Mo, W, or Mo/W-based flame- sprayed film on the exposed part inside a vacuum chamber of a film formation etching device. CONSTITUTION:After evacuating the vacuum chamber interior 4 through an evacuation port, Ar gas is introduced to 10Pa, for example. When a high frequency power is supplied from a high frequency power source 12 to a table 6, glow discharge is initiated ahead an etching electrode 2. Thereby, produced Ar ion is projected to a substrate 7 of Si wafer, and Si oxide on its surface is etched. Si oxide which is smashed out of the substrate 7 scatters up to the vacuum chamber interior 4 and forms a film-like deposit 13 on an exposed part inside the vacuum chamber. However, an Mo, W or Mo/W-based solvent film 10 is formed on the surface of the exposed part, and linear expansion coefficient of the flame-sprayed film 10 is about 5X10<6>deg<-1> in the case of Mo and about 4X10<6>deg<-1> in the case of W; therefore, the linear expansion coefficient is closer to that of Si oxide than that of Al or stainless steel, and the Si oxide deposited on the flame-sprayed film 10 does not peel off easily.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a film forming and etching apparatus used in a semiconductor manufacturing process.

(Prior Art) Conventionally, as shown in the first diagram, a substrate d such as an S wafer is placed in a vacuum chamber C equipped with a vacuum exhaust port a and an inert gas inlet port, an etching electrode e and a shield. A film forming and etching apparatus in which a plate f is provided is known. In this device, the inside of the vacuum chamber C is evacuated from the vacuum exhaust port a, and then, for example, Ar gas is introduced from the inlet to reduce the pressure to below 10 Pa, and the etching electrode e is heated to 13.56 mA from a high frequency power source g.
A high frequency of M11□ is applied to generate glow discharge in the vacuum chamber C, and when the ^r ions generated by the glow discharge are accelerated by the electric potential and collide with the cutting board d, the surface of the substrate d, for example, is S1 oxidized. Things are knocked out and etched. This ejected St oxide forms a film on the surfaces of the exposed parts inside the vacuum chamber C, such as the etched electrode e1 shield plate f made of aluminum or stainless steel, and the inner wall surface of the vacuum chamber C. However, these exposed areas are processed to have an uneven shape by blasting, M thermal spraying, etc., and are processed to suppress the film-like deposits from peeling off.

The state of deposition of Sl oxide, etc. on the exposed parts is as shown in Figure 2, and if no special treatment is applied to the exposed parts of aluminum, stainless steel, etc., it will be as shown in Figure 2 (4). A film-like deposit (i) peels off, but the exposed area is covered with the film as shown in Fig. 2 (
B) As shown in (C), when the blasting treatment j and the M thermal spraying treatment k are performed, the peeling and separation of the deposit i is suppressed.

(Problem to be solved by the invention a) Deposits i deposited on exposed areas subjected to blasting or M thermal spraying are removed at an appropriate time;
When is an S1 oxide film made of Sl oxide, the exposed part is cleaned with dilute acid containing hydrofluoric acid to remove the St oxide film, so the surface of the exposed part is dissolved by the dilute acid,
The blasted surface and the M-sprayed surface became smooth, which weakened the biting effect of the 81 oxide, and furthermore, the service life was shortened due to its dissolution.

In addition, in order to reduce the amount of gas released from the exposed parts into the vacuum chamber C, aluminum and stainless steel materials are used in the vacuum chamber C, but the linear expansion coefficient of the aluminum material and M spray coating is 23X. 1010-6de', the linear expansion coefficient of the stainless steel material is IOX 10-'deg-', and S1
Linear expansion coefficient of oxide (0,35X10-'deg-'
), the adhesion of the Sl oxide deposit i to the exposed surface is relatively poor, and the effect of suppressing the peeling and detachment of the deposit i is weak.

The present invention solves the above-mentioned inconveniences and shortcomings, and solves the above-mentioned disadvantages and disadvantages.
Even after the oxide is removed, the exposed area will not be smoothed and there will be less damage.
It is an object of the present invention to provide a film forming and etching apparatus having an exposed portion with strong adhesion of S1 oxide.

(Means for Solving the Problems) In the present invention, Mo or W or a material mainly containing these is applied to exposed parts such as the constituent members of the etching electrode and the inner wall of the vacuum chamber that are exposed in the vacuum chamber of the film forming etching apparatus. The above object was achieved by thermally spraying the component materials to form a thermally sprayed film.

(Function) The inner wall of the vacuum chamber, the constituent members of the etching electrode, and the shield portion are exposed in the vacuum chamber of the film-forming etching device, and a No or W sprayed film is formed on these exposed portions. Therefore, even if S1 oxide is deposited, it can be removed with dilute acid containing hydrofluoric acid without dissolving the sprayed film, and since the sprayed film does not melt, there is no damage to the aluminum or stainless steel base material. This prevents the thermal spray coating from becoming smooth and makes it difficult for the Sl oxide to peel off.

Therefore, etching is delayed for a long time, abnormal discharge is prevented, and the amount of dust adhering to the substrate can be reduced.

(Embodiment) An embodiment of the present invention will be explained based on FIG. 3 of the drawing. In the figure, reference numeral (1) is a chamber wall of a vacuum chamber, and (2) the chamber wall 1).
The etching electrode is shown facing the vacuum chamber (4) through the through hole (3) formed in the etching electrode (
2) is fixed to the chamber wall (1) via the insulator (5).
? A F-etching table (6) is provided, and a substrate (7) made of an S1 wafer is held and attached to the surface of the table (6) by a wafer clip (8). (9
) is a shield provided in front of the etching electrode (2) in the vacuum chamber (4), and the shield (9>) includes the RP etch shield (9a), the RP station shield (9b) consisting of a perforated plate, and the filament shield. (9c).The etching electrode (2) is connected to the vacuum chamber (4>).
), the shield (9), and the inner surface of the chamber wall (1) are exposed, and the surfaces of these exposed portions C11) are coated with Mo or W or a material containing these as main components, as shown in the fourth figure. A sprayed film aO is formed to have a thickness of, for example, 200 pm. (l
D is RF etching table (6〉13.56MII
This is a high frequency power supply that supplies a high frequency of z.

After evacuating the vacuum chamber (4) from a vacuum exhaust port (not shown), Ar gas is introduced to, for example, 10 Pa, and high frequency power is supplied from the high frequency power source ab to the table (6).
Glow discharge occurs in front of the etching electrode (2), and the Ar ions generated thereby reach the Si wafer substrate (7).
The 81 oxide on the surface is etched.

The Sl oxide that is knocked out from the substrate (7) is in the vacuum chamber 4
) and is deposited in the form of a film G3 on the exposed part in the vacuum chamber, but a sprayed film (+1) mainly composed of MoSW or MoSW is formed on the surface of the exposed part, and the sprayed film (IG The linear expansion coefficient of is M.

In case of 5 x 1010-6 de', in case of W 4
Since it is about X 1010-6 de', it is closer to the linear expansion coefficient of S1 oxide than M or stainless steel, and
Sl oxide deposited on O does not peel off easily. In the conventional film-forming and etching equipment that forms the M sprayed film on the exposed parts, particles with a particle size of 0.5 μm or more adhere to the Si wafer substrate at a rate of 100 to 500 particles per 6' wafer. In the case where the Mo sprayed film of the invention was formed, the number decreased to less than 100 76' wafers.

In addition, when the shield part on which the conventional M sprayed film was formed, the deposited Sl oxide was cleaned with dilute acid containing hydrofluoric acid.
The M sprayed film also had the disadvantage of dissolving, but the Mo sprayed film and W sprayed film of the present invention can be removed even if the deposited S1 oxide is removed with a dilute acid made by diluting 46% hydrofluoric acid 10 times. It did not dissolve and was able to withstand more than 10 removals without dissolving. Note that if the thickness of the sprayed film a is 3 mm or more, the sprayed film (IO) may peel off from the M or stainless steel base material, so the thickness is preferably 3 mm or less.

In the above embodiments, etching of a Si wafer has been explained, but the sputtering target site 5
102, M alloy, Si3N, Mo31%WSI 5T
When forming a film by sputtering using IW, Tl5I, 81, etc., Mo is sprayed on the exposed parts of the vacuum chamber such as the inner wall surface of the vacuum chamber, the substrate holder, and the adhesion prevention plate, and then the sputtering process is performed. It is possible to repeatedly recycle by removing the deposits on the exposed parts, and even when forming a film by CvD, it is possible to reuse it by forming a sprayed No. It becomes possible.

(Effects of the Invention) As described above, according to the present invention, a sprayed film containing No., W, or these as main components is formed on the exposed portion in the vacuum chamber of the film forming and etching device, so that etching of the substrate is prevented. It is possible to reduce the amount of particles that adhere to the substrate during sputtering and sputtering, and the deposits on exposed parts can be removed and regenerated with hydrofluoric acid without damaging the sprayed film or the base material, improving durability, etc. There is an effect.

[Brief explanation of drawings]

Figure 1 is a cross-sectional side view of a conventional film-forming and etching system;
The figure is an explanatory diagram of the state of deposition of deposits on the conventional exposed part.
The figure is a cross-sectional side view of the embodiment of the present invention, and FIG. 4 is an explanatory diagram of the state of deposits attached to the exposed portion in the embodiment of the present invention. (1)... Chamber wall (2)... Etching device (4)... Vacuum chamber (7)... Substrate (9)...
)...Shield a■...Thermal spray coating (11...
Exposed part

Claims (1)

[Scope of Claims] 1. Mo or W or a material containing these as main components is applied to exposed parts such as the constituent members of the etching electrode and the inner wall of the vacuum chamber that are exposed in the vacuum chamber of the film-forming etching apparatus. A film forming etching device characterized by forming a sprayed film by thermal spraying. 2. A film forming and etching apparatus characterized in that the sprayed film is formed of Mo to a thickness of 3 mm or less.