JPH0371497B2 - - Google Patents

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Publication number
JPH0371497B2
JPH0371497B2 JP4848184A JP4848184A JPH0371497B2 JP H0371497 B2 JPH0371497 B2 JP H0371497B2 JP 4848184 A JP4848184 A JP 4848184A JP 4848184 A JP4848184 A JP 4848184A JP H0371497 B2 JPH0371497 B2 JP H0371497B2
Authority
JP
Japan
Prior art keywords
tungsten
molybdenum
alloy
tantalum
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4848184A
Other languages
Japanese (ja)
Other versions
JPS60194042A (en
Inventor
Sadao Umetsu
Ryunosuke Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toho Kinzoku Co Ltd
Original Assignee
Toho Kinzoku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toho Kinzoku Co Ltd filed Critical Toho Kinzoku Co Ltd
Priority to JP4848184A priority Critical patent/JPS60194042A/en
Publication of JPS60194042A publication Critical patent/JPS60194042A/en
Publication of JPH0371497B2 publication Critical patent/JPH0371497B2/ja
Granted legal-status Critical Current

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  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

この発明は、ハロゲンランプのサポート材等に
用いられるダングステン基合金に関する。 タングステンとモリブデンとは互いに類似した
高融点金属であり、これらの合金は、電気抵抗と
その温度係数が組成によつて急激に変化する等の
性質をそなえ、電子材料等に従来使用されている
ものである。上記タングステンとモリブデンとの
合金は、モリブデンの比重がタングステンのそれ
に較べてかなり小さいので、同一形状の製品をタ
ングステンのみでつくるよりも、この合金を用い
てつくる方が材料費が安くてすむという利点があ
り、一般に純タングステンよりも加工性が良好
で、強度的にもすぐれているといわれている。 この発明は、上記タングステンとモリブデンの
合金の特徴を生かし、さらにハロゲンランプ等の
構成材料に使用する場合におけるゲツター効果を
付与した合金を提供するもので、重量比で0.5〜
2%のタンタルと40%未満のモリブデンを含有
し、残部が実質的にタングステンである電子機器
用タングステン基合金をその要旨としている。 これら有効成分のうち、タンタル(Ta)がゲ
ツターとしての働きをなすもので、タンタルの含
有量を少なくすると、O2等のガスを吸着し針状
のタングステン結晶の析出を防ぐという所望のゲ
ツター効果が充分に達成されない。一方タンタル
は高価であるので、多量に添加するのは不経済で
あり、加工性および強度の面でも好ましくない。
これらの点を検討した結果、タンタルの含有量の
好ましい範囲は0.5〜2%(重量%、以下同じ)
であり、0.5〜1.5%とするのがより好ましく、1
〜1.5%とするのがさらに好ましいことがわかつ
た。 つぎに、モリブデンの量について述べれば、タ
ングステン(W)とモリブデン(Mo)の合金は
全率固溶形の合金であり、その性質がモリブデン
の含有量とともに変化するので、用途によつて所
望の組成のものを選べばよいが、経済性、加工
性、強度等の見地から、例えばハロゲンランプ用
の材料としては、40%未満とするのが好ましく、
1%以上40%未満とするのがより好ましい。な
お、これらの成分の他にドープ剤(S、Al、K
等)や不可避的に混入する微量の不純物を含有し
てもよい。 この合金は、粉末冶金法によつて製造すること
ができる。たとえば、タンタル粉末、タングステ
ン粉末およびモリブデン粉末を所望の割合に配合
し、充分混合したのち加圧成形して所定寸法の圧
粉体とする。この成形体を水素雰囲気中等におい
て比較的低温で予焼結したのち、高温で本焼結を
行ない、インゴツトを得る。上記加圧成形、予焼
結、本焼結等における取扱いは、モリブデンの量
が多い方が一般に容易である。得られたインゴツ
トは、圧延、スエージング、伸線等の必要な塑性
加工を施して、所望の製品とする。次に本発明の
実施例について説明する。 実施例 −320メツシユのタンタル粉末、平均粒度3.5ミ
クロン(μm)のタングステン粉末および平均粒
度4.2ミクロンのモリブデン粉末を使用し、第1
表に示す配合比で配合して充分混合した。
The present invention relates to a dungsten-based alloy used as a support material for a halogen lamp. Tungsten and molybdenum are high-melting point metals that are similar to each other, and these alloys have properties such as electrical resistance and temperature coefficient that change rapidly depending on the composition, and are conventionally used in electronic materials. It is. In the above-mentioned alloy of tungsten and molybdenum, the specific gravity of molybdenum is considerably lower than that of tungsten, so the advantage of using this alloy is that the material cost is lower than making products of the same shape only from tungsten. It is generally said to have better workability and strength than pure tungsten. This invention takes advantage of the characteristics of the above-mentioned tungsten and molybdenum alloy, and also provides an alloy that has a getter effect when used as a constituent material of halogen lamps, etc., and has a weight ratio of 0.5 to
The gist is a tungsten-based alloy for electronic devices containing 2% tantalum and less than 40% molybdenum, with the remainder being essentially tungsten. Among these active ingredients, tantalum (Ta) acts as a getter, and when the content of tantalum is reduced, it has the desired getter effect of adsorbing gases such as O 2 and preventing the precipitation of needle-shaped tungsten crystals. is not fully achieved. On the other hand, since tantalum is expensive, it is uneconomical to add it in large amounts, and it is also unfavorable in terms of workability and strength.
As a result of considering these points, the preferred range of tantalum content is 0.5 to 2% (wt%, same below)
It is more preferable to set it as 0.5 to 1.5%, and 1
It was found that it is more preferable to set the content to 1.5%. Next, regarding the amount of molybdenum, the alloy of tungsten (W) and molybdenum (Mo) is a completely solid solution alloy, and its properties change with the molybdenum content. The composition may be selected, but from the viewpoint of economy, processability, strength, etc., it is preferable to use less than 40% as a material for a halogen lamp, for example.
More preferably, the content is 1% or more and less than 40%. In addition to these components, doping agents (S, Al, K
etc.) or a trace amount of unavoidably mixed impurities. This alloy can be manufactured by powder metallurgy. For example, tantalum powder, tungsten powder, and molybdenum powder are blended in a desired ratio, thoroughly mixed, and then pressure-molded to form a green compact of a predetermined size. After presintering this compact at a relatively low temperature in a hydrogen atmosphere or the like, main sintering is performed at a high temperature to obtain an ingot. Handling in the above-mentioned pressure forming, presintering, main sintering, etc. is generally easier when the amount of molybdenum is larger. The obtained ingot is subjected to necessary plastic working such as rolling, swaging, and wire drawing to form the desired product. Next, examples of the present invention will be described. Example - Using tantalum powder of 320 mesh, tungsten powder with an average particle size of 3.5 microns (μm), and molybdenum powder with an average particle size of 4.2 microns, the first
They were blended at the blending ratio shown in the table and thoroughly mixed.

【表】 得られた混合粉末を2t/cm2の圧力で加圧成形し
て15×15×400(mm)の成形体とし、電気炉を用い
て水素気流中で最高温度1700℃で予焼結を行なつ
た。つぎに焼結炉として反鐘炉(ベルジヤ式加熱
炉)を使用し、水素気流中で予焼結上りの成形体
に直接通電して本焼結を行なつた。この場合の最
高通電電流は、溶融電流の約90%とした。この本
焼結によつて得られたインゴツトに段階的なスエ
ージング加工を施して直径3.0mmの丸棒とし、し
かるのち落し率8〜10%で線引き加工を施して直
径0.35mmの線材とした。上記加工の途中で、次の
中間アンニールを行なつた。先ず、直径3mmの段
階で1370℃の電気炉(ホツトゾーンの長さ約60
cm)中を2m/分の速度で通過させ、つぎに直径
1.6mmの段階で再度同様な中間アンニールを行な
つた。 得られた合金線は、タンタルを含有するのでゲ
ツター効果をそなえており、これを用いてハロゲ
ンランプのサポート材(タングステンフイラメン
トを支持するリード線兼用の支持材)を試作した
ところ、充分な強度をそなえたすぐれた性能のも
のが得られた。
[Table] The obtained mixed powder was press-molded at a pressure of 2t/cm 2 to form a 15 x 15 x 400 (mm) compact, and pre-fired at a maximum temperature of 1700°C in a hydrogen stream using an electric furnace. He concluded the ceremony. Next, a bell furnace (Belgear heating furnace) was used as a sintering furnace, and main sintering was performed by directly applying electricity to the pre-sintered compact in a hydrogen stream. The maximum current in this case was approximately 90% of the melting current. The ingot obtained by this main sintering was subjected to stepwise swaging processing to form a round bar with a diameter of 3.0 mm, and then wire drawing processing was performed at a drop rate of 8 to 10% to obtain a wire rod with a diameter of 0.35 mm. . In the middle of the above processing, the following intermediate annealing was performed. First, at the stage of 3 mm in diameter, heat it in an electric furnace at 1370℃ (the length of the hot zone is approximately 60 mm).
cm) at a speed of 2 m/min, then the diameter
Similar intermediate annealing was performed again at the 1.6 mm stage. The obtained alloy wire has a getter effect because it contains tantalum, and when we used it to make a prototype support material for a halogen lamp (a support material that also doubles as a lead wire to support a tungsten filament), we found that it had sufficient strength. A product with excellent performance was obtained.

Claims (1)

【特許請求の範囲】[Claims] 1 重量比で0.5〜2%のタンタルと40%未満の
モリブデンを含有し、残部が実質的にタングステ
ンである電子機器用タングステン基合金。
1. A tungsten-based alloy for electronic devices containing 0.5 to 2% tantalum and less than 40% molybdenum by weight, with the remainder being substantially tungsten.
JP4848184A 1984-03-13 1984-03-13 Tungsten base alloy for electronic apparatus Granted JPS60194042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4848184A JPS60194042A (en) 1984-03-13 1984-03-13 Tungsten base alloy for electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4848184A JPS60194042A (en) 1984-03-13 1984-03-13 Tungsten base alloy for electronic apparatus

Publications (2)

Publication Number Publication Date
JPS60194042A JPS60194042A (en) 1985-10-02
JPH0371497B2 true JPH0371497B2 (en) 1991-11-13

Family

ID=12804574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4848184A Granted JPS60194042A (en) 1984-03-13 1984-03-13 Tungsten base alloy for electronic apparatus

Country Status (1)

Country Link
JP (1) JPS60194042A (en)

Also Published As

Publication number Publication date
JPS60194042A (en) 1985-10-02

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