JPH0372069A - Method for continuously vapor-depositing compound on metal strip - Google Patents
Method for continuously vapor-depositing compound on metal stripInfo
- Publication number
- JPH0372069A JPH0372069A JP20868989A JP20868989A JPH0372069A JP H0372069 A JPH0372069 A JP H0372069A JP 20868989 A JP20868989 A JP 20868989A JP 20868989 A JP20868989 A JP 20868989A JP H0372069 A JPH0372069 A JP H0372069A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- strip
- electron beam
- vacuum chamber
- ionization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 title claims description 8
- 238000000151 deposition Methods 0.000 title abstract description 14
- 238000010894 electron beam technology Methods 0.000 claims abstract description 19
- 238000007740 vapor deposition Methods 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims 2
- 230000032258 transport Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 5
- 239000010935 stainless steel Substances 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010891 electric arc Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 2
- 230000001133 acceleration Effects 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000037336 dry skin Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、品質の優れた化合物膜を金属帯に高速で連続
的に蒸着する方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for continuously depositing a high-quality compound film onto a metal strip at high speed.
（従来技術）
化合物を基板に蒸着する方法として、反応ガスを真空室
内に導入してイオンブレーティング法により反応ガス岨
戊Ｉ＆分と蒸発物との化合物を基板に蒸着する方法があ
る。従来、この方法で化合物を鋼帯や大型の基板に蒸着
する場合、蒸発物の蒸発、イオン化や反応がス組成威分
のイオン化にはホローカソード電子ビーム〃ンを用いて
行っていた。(Prior Art) As a method for depositing a compound on a substrate, there is a method in which a reactive gas is introduced into a vacuum chamber and a compound of a reactive gas and an evaporated substance is deposited on the substrate using an ion blating method. Conventionally, when a compound is deposited on a steel strip or a large substrate by this method, a hollow cathode electron beam has been used to evaporate and ionize the evaporated material and to ionize the component of the reaction component.
（発明が解決しようとする問題点）
しかし、この方法は、蒸発物蒸気のイオン化をホローカ
ソード電子ビームの低エネルギー電子の衝突により行っ
ているため、電子ビーム量に比較して蒸発物蒸気の発生
量が多いと、蒸発物蒸気のイオン化される比率（イオン
化率）が低下してしまう、しかし、蒸着膜の膜質は、こ
の蒸発物蒸気のイオン化率に大きく影響されるので、イ
オン化率が低下すると、蒸着膜の組成は、反応ガス成分
の方が多くなり、目的の組成の蒸着膜が得られず、外観
、硬度、密着性などが低下してしまう０例えば、窒素ガ
スの反応ガス中でＴｉを多量に蒸発させてＴｉＮを１０
０ Ａ／ｓｅｃ以上の蒸着速度で蒸着しようとすると、
蒸着膜はＴｉＮ特有の金色にならず、黒色を帯びてくる
。また、蒸着膜の硬度、密着性ら低下してしまう。(Problem to be solved by the invention) However, in this method, ionization of evaporated material vapor is performed by collision of low-energy electrons from a hollow cathode electron beam, so the amount of evaporated material vapor generated is smaller than the amount of electron beam. If the amount is large, the ionization ratio (ionization rate) of the evaporated vapor will decrease. However, the quality of the deposited film is greatly influenced by the ionization rate of this evaporated vapor, so if the ionization rate decreases, , the composition of the deposited film will be dominated by reactive gas components, making it impossible to obtain a deposited film with the desired composition and deteriorating the appearance, hardness, adhesion, etc. For example, if Ti 10% of TiN by evaporating a large amount of
When attempting to deposit at a deposition rate of 0 A/sec or higher,
The deposited film does not have the golden color characteristic of TiN, but becomes blackish. In addition, the hardness and adhesion of the deposited film decrease.
このため、鋼帯などの金属帯を移送しながら連続的に均
一に７ＩｋＸ１する場合、蒸発物蒸気発生量を多くする
ことにより蒸着速度を速くして、生産性を高めようとし
ても、実施困難であった。For this reason, when transferring a metal strip such as a steel strip and uniformly applying 7IkX1 continuously, it is difficult to increase productivity by increasing the amount of evaporated vapor generated and increasing the deposition rate. there were.
本発明は、以上のような点に鑑み、蒸着速度を速くして
も高品質の化合物を金属帯に連続的に均一に蒸着できる
蒸着法を提供するものである。In view of the above points, the present invention provides a vapor deposition method that allows continuous and uniform vapor deposition of a high-quality compound onto a metal strip even when the vapor deposition rate is increased.
（問題点を解決するための手段）
本発明は、反応ゲスを導入した真空室内にイオン化！極
を配置して、真空室内で蒸発物を電子ビームで蒸発させ
るとともに、その蒸発物蒸気を蒸発物とイオン化電極と
の間でアーク放電させて発生させたプラズマ中でイオン
化し、蒸発物と反応ガス組威威分のイオンおよび中性の
蒸発物蒸気と反応ガス組成成分を真空室内のイオン化電
極上方で移送する金属帯に連続的に蒸着することにより
高品質の蒸着膜を蒸着できるようにした。(Means for solving the problem) The present invention provides ionization in a vacuum chamber into which a reactive gas is introduced! By arranging the poles, the evaporated material is evaporated with an electron beam in a vacuum chamber, and the evaporated material vapor is ionized in the plasma generated by arc discharge between the evaporated material and the ionization electrode, and reacts with the evaporated material. By continuously depositing ion and neutral evaporated vapors and reactive gas composition components in a vacuum chamber onto a metal band that is transferred above an ionization electrode, a high-quality deposited film can be obtained. .
（作用）
真空室内にイオン化電極を配置して、蒸発物とイオン化
電極との開でアーク放電させると、プラズマが発生する
。このプラズマは、蒸発物の蒸気、蒸発物の表面から飛
び出す熱電子により発生するものであるので、それらを
多くすれば、プラズマ密度や温度が高くなり、蒸発物蒸
気のイオン化率が大きくなる。従って、蒸着の際、電子
ビームの出力を高めて、蒸発物表面を激しく加熱するこ
とにより蒸発物の蒸発量や熱電子を多くすれば、７ラズ
マ密度や温度を高くすることができるので、イオン化率
が大きくなり、高速蒸着することができる。(Function) Plasma is generated when an ionization electrode is placed in a vacuum chamber and an arc is discharged between the evaporated material and the ionization electrode. Since this plasma is generated by the vapor of the evaporated material and thermionic electrons ejected from the surface of the evaporated material, increasing the number of them increases the plasma density and temperature, and increases the ionization rate of the evaporated material vapor. Therefore, during vapor deposition, if the output of the electron beam is increased and the surface of the evaporated material is intensely heated to increase the amount of evaporated material and the number of thermoelectrons, it is possible to increase the 7 plasma density and temperature, resulting in ionization. This increases the rate and enables high-speed deposition.
なお、低速蒸着の場合も熱フィラメントで熱電子を供給
してやれば、プラズマ密度や温度を高くすることができ
るので、イオン化率を高めることができる。Note that even in the case of low-speed evaporation, if hot electrons are supplied using a hot filament, the plasma density and temperature can be increased, so that the ionization rate can be increased.
（実施例〉
１１図に示すような蒸着装置を用いて、ＴｉＮをステン
レス鋼帯に蒸着した０図において、１は真空室で、その
片側側部に真空ポンプ２が接続され、真空室１の下側に
は〃ス導入ロ３が設けられている。また、この真空室１
の内部下部には、ハース４が配置され、そこに蒸発物５
を入れることができるようになっている。この蒸発物５
は、反対側側部に配置された電子ビームガン６より照射
した電子ビーム７で蒸発させるようになっている。(Example) TiN was vapor deposited on a stainless steel strip using a vapor deposition apparatus as shown in Fig. 11. In Fig. 0, 1 is a vacuum chamber, and a vacuum pump 2 is connected to one side of the vacuum chamber 1. A vacuum chamber 1 is provided at the bottom.
A hearth 4 is arranged in the lower part of the interior, and the evaporated material 5 is placed there.
It is now possible to enter. This evaporated material 5
is evaporated by an electron beam 7 irradiated from an electron beam gun 6 disposed on the opposite side.
ハース４の上方には、イオン化電極８が配置され、この
電極と蒸発物５との間でアーク放電させて、発生したプ
ラズマ９中で蒸発物５の蒸気をイオン化させ、イオン化
蒸気１０にするようになっている。An ionizing electrode 8 is disposed above the hearth 4, and arc discharge is caused between this electrode and the evaporator 5, and the vapor of the evaporator 5 is ionized in the generated plasma 9 to become ionized vapor 10. It has become.
イオン化電極８の上方の真空室１内両側には、ペイオフ
リール１１と巻き取りリール１２とが配ｒｆｌされ、接
地電位にした金属帯１３を連続移送できるようになって
いる。また、真空室１の上部には、金属帯１３を加熱す
る加熱用電子ビームガン１４と放射温度計１５が配置さ
れている。A payoff reel 11 and a take-up reel 12 are disposed on both sides of the vacuum chamber 1 above the ionization electrode 8, so that the metal strip 13 brought to the ground potential can be continuously transported. Moreover, a heating electron beam gun 14 for heating the metal band 13 and a radiation thermometer 15 are arranged in the upper part of the vacuum chamber 1.
第１図の蒸着装置で金属帯１３としで、５ＵＳ４３０ス
テンレス鋼帝（板厚０．５論論、硝酸電解酸洗後ドライ
スキンパスを施したもの）をペイオフリール１１、巻き
取りリール１２に装着して、ハース１内にＴｉを入れた
後、真空室１をＩ Ｘ １０−’ｔｏｒｒまで排気し、
〃ス導入ロ３より窒素ゲスを導入した。Using the vapor deposition apparatus shown in FIG. 1, a metal strip 13 was used, and a 5US430 stainless steel sheet (thickness: 0.5 mm, subjected to a dry skin pass after nitric acid electrolytic pickling) was attached to the payoff reel 11 and the take-up reel 12. After putting Ti into the hearth 1, the vacuum chamber 1 was evacuated to I x 10-'torr.
〃Nitrogen gas was introduced from gas introduction hole 3.
その後、加熱用電子ビームガン１４でステンレス鋼帯を
６００°Ｃに加熱するとともに、加速電圧３０Ｋｖの電
子ビームガン６でＴｉの蒸発量を種々変化させて、Ｔｉ
を蒸発させ、その蒸気をＴｉとイオン化電極８との間で
発／Ｌさせたアーク放電によるプラズマ９中でイオン化
してステンレスＷ！帯にＴ ｉ Ｎを３μ−蒸着した。Thereafter, the stainless steel strip was heated to 600°C using the heating electron beam gun 14, and the amount of Ti evaporated was varied using the electron beam gun 6 with an accelerating voltage of 30 Kv.
is evaporated and the vapor is ionized in a plasma 9 caused by an arc discharge generated between Ti and an ionization electrode 8 to form stainless steel W! 3 μ-deposition of T i N was applied to the strip.
なお、比較のために電子ビームガン６を加速電圧４０Ｖ
のホローカソード電子ビームガンに換え、イオン化電極
８でプラズマを発生させない場合について実施した。こ
の場合、真空室１の真空度、ステンレス銅帯の加熱温度
などは同一条件で実施した。For comparison, the electron beam gun 6 was set to an accelerating voltage of 40 V.
The experiment was conducted in the case where the ionization electrode 8 did not generate plasma in place of the hollow cathode electron beam gun. In this case, the vacuum degree of the vacuum chamber 1, the heating temperature of the stainless copper strip, etc. were carried out under the same conditions.
第１表に蒸着速度と蒸着膜の硬度、密着性および色調の
関係を示す、なお、蒸着膜の硬度は、ビッカース硬度計
により測定し、密着性は、アコースティックエミッショ
ンセンサー付きスクラッチ試駐機で先端が２００μ−の
ダイヤモンドコーンにより蒸着膜を引っかいて、蒸着膜
がはがれるときの荷重（臨界荷電）で測定した。また、
色調は＾Ｕ板を標準板に用い、この標準板との色差（Δ
Ｅ）をビ、第１表より明らかなように、本発明法で蒸着
した蒸着膜は、蒸着速度を高めても、硬度、密着性とも
良好で、色調も金色に近い一定の色調を示す。Table 1 shows the relationship between the deposition rate and the hardness, adhesion, and color tone of the deposited film.The hardness of the deposited film was measured using a Vickers hardness tester, and the adhesion was measured using a scratch test machine equipped with an acoustic emission sensor. The deposited film was scratched with a diamond cone having a diameter of 200 μm, and the load (critical charge) at which the deposited film was peeled off was measured. Also,
For the color tone, ^U board is used as a standard board, and the color difference (Δ
E) As is clear from Table 1, the film deposited by the method of the present invention has good hardness and adhesion even when the deposition rate is increased, and exhibits a constant color tone close to gold.
一方、ホローカンード電子ビームガンを使用して、イオ
ン化電極８でプラズマを発生させず蒸着した蒸着膜は、
蒸着速度が大きくなると、硬度、密着性が低下し、色調
も金色を呈しなくなる。On the other hand, a vapor deposited film using a hollow electron beam gun without generating plasma at the ionization electrode 8 is
As the deposition rate increases, the hardness and adhesion decrease, and the color tone no longer appears golden.
（発明の効果）
以上のように、本発明法によれば、ｉ着速度を大きくし
ても、品質の漬れた化合物を蒸着できる。(Effects of the Invention) As described above, according to the method of the present invention, even if the i-deposition rate is increased, a compound of poor quality can be deposited.
従って、金属帯を連続蒸着するのに適用すれば、生産性
を高めることができる。Therefore, if applied to continuous vapor deposition of metal strips, productivity can be increased.
第１図は、本発明により蒸着する場合の蒸着装置を示す
ものである。
１・・・真空室、２・・・真空ポンプ、３・・・がス導
入口、４・・・バーＸ、５・・・蒸Ｑ物、６・・・電子
ビームガン、７・・・電子ビーム、８・・・イオン化電
櫃、９・・・プラズマ、１０・・・イオン化蒸ス、１１
・・・ペイオフリール、１２・・・巻き取りリール、１
３・・・金属帯、１４・・・加熱用電子ビームガン、
１５・・・放射温度計、FIG. 1 shows a vapor deposition apparatus for vapor deposition according to the present invention. 1... Vacuum chamber, 2... Vacuum pump, 3... Gas inlet, 4... Bar X, 5... Vapor Q substance, 6... Electron beam gun, 7... Electron Beam, 8...Ionization electric box, 9...Plasma, 10...Ionization vapor, 11
... Payoff reel, 12 ... Take-up reel, 1
3... Metal band, 14... Heating electron beam gun, 15... Radiation thermometer,
Claims (1)
、真空室内で蒸発物を電子ビームで蒸発させるとともに
、その蒸発物蒸気を蒸発物とイオン化電極との間でアー
ク放電させで発生させたプラズマ中でイオン化し、蒸発
物と反応ガス組成成分のイオンおよび中性の蒸発物蒸気
と反応ガス組成成分を真空室内のイオン化電極上方で移
送する金属帯に連続的に蒸着することを特徴とする化合
物の金属帯への連続蒸着法。Plasma is generated by placing an ionizing electrode in a vacuum chamber into which a reactive gas is introduced, and evaporating the evaporated material in the vacuum chamber with an electron beam, and then arcing the evaporated material vapor between the evaporating material and the ionizing electrode. compound characterized in that it is ionized in a vacuum chamber and is continuously deposited on a metal band that transports ions of the evaporate and the reactant gas composition and neutral evaporate vapors and the reactant gas composition over an ionizing electrode in a vacuum chamber. Continuous vapor deposition method on metal strips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20868989A JPH0372069A (en) | 1989-08-12 | 1989-08-12 | Method for continuously vapor-depositing compound on metal strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20868989A JPH0372069A (en) | 1989-08-12 | 1989-08-12 | Method for continuously vapor-depositing compound on metal strip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0372069A true JPH0372069A (en) | 1991-03-27 |
Family
ID=16560444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20868989A Pending JPH0372069A (en) | 1989-08-12 | 1989-08-12 | Method for continuously vapor-depositing compound on metal strip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0372069A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612090A (en) * | 1992-11-20 | 1997-03-18 | Nisshin Steel Co., Ltd. | Iron-based material having excellent oxidation resistance at elevated temperatures and process for the production thereof |
| US5869908A (en) * | 1995-10-26 | 1999-02-09 | Mercedes-Benz Ag | Key/vehicle communication device for the activation of an immobilizer and of a remotely controllable function |
| EP2572014A4 (en) * | 2010-05-06 | 2016-03-02 | Univ Virginia Patent Found | STEAM-DRIVEN DIRECT STEP DEPOSITION (SA-DVD) AND METHOD THEREOF |
-
1989
- 1989-08-12 JP JP20868989A patent/JPH0372069A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612090A (en) * | 1992-11-20 | 1997-03-18 | Nisshin Steel Co., Ltd. | Iron-based material having excellent oxidation resistance at elevated temperatures and process for the production thereof |
| US5631090A (en) * | 1992-11-20 | 1997-05-20 | Nisshin Steel Co., Ltd. | Iron-based material having excellent oxidation resistance at elevated temperatures and process for the production thereof |
| US5869908A (en) * | 1995-10-26 | 1999-02-09 | Mercedes-Benz Ag | Key/vehicle communication device for the activation of an immobilizer and of a remotely controllable function |
| EP2572014A4 (en) * | 2010-05-06 | 2016-03-02 | Univ Virginia Patent Found | STEAM-DRIVEN DIRECT STEP DEPOSITION (SA-DVD) AND METHOD THEREOF |
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