JPH0376151A - Capacitive element - Google Patents
Capacitive elementInfo
- Publication number
- JPH0376151A JPH0376151A JP21228489A JP21228489A JPH0376151A JP H0376151 A JPH0376151 A JP H0376151A JP 21228489 A JP21228489 A JP 21228489A JP 21228489 A JP21228489 A JP 21228489A JP H0376151 A JPH0376151 A JP H0376151A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- capacitive
- poly
- capacitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 230000004075 alteration Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は容量素子に関し、特に集積回路に組み込まれる
容量素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a capacitive element, and particularly to a capacitive element incorporated into an integrated circuit.
従来半導体集積回路に組み込まれている容量素子の一例
を第２図（ａ）、 （ｂ）を用いて説明する。第２図（
ｂ）に示すように容量膜はＳｉＯ２膜５とＳｉＮ膜６の
２層の誘電体膜から或っている。これをはさむ下部電極
３と上部電極７はいずれもＰドープされたｐｏｌｙ−３
ｉ（多結晶シリコン）から成っている。下部電極３はＡ
Ａ膜９に接続され、また上部電極４はＰＳＧＳａＯ２孔
部１０から他のＡ４膜へ接続されている。An example of a capacitive element conventionally incorporated into a semiconductor integrated circuit will be described with reference to FIGS. 2(a) and 2(b). Figure 2 (
As shown in b), the capacitive film consists of two dielectric films, an SiO2 film 5 and a SiN film 6. The lower electrode 3 and upper electrode 7 sandwiching this are both P-doped poly-3
i (polycrystalline silicon). The lower electrode 3 is A
The upper electrode 4 is connected to the A4 film 9 through the PSGSaO2 hole 10.
上述した従来の容量素子では、両端の電極に印加するバ
イアス電圧の正負を逆にすると容量値及びリーク電流値
の電気的特性が異なるという問題点がある。この原因は
特定できないが、下部及び上部電極の各々誘電体膜界面
の状態（例えば荒さ）の違い、第２図の例の様に容量膜
が複数の誘電体膜から形成されている場合、両鍔電体膜
材料のバンドギャップの違いによる電子の注入効率の違
い等に起因しているものと推定される。The conventional capacitive element described above has a problem in that when the polarity of the bias voltage applied to the electrodes at both ends is reversed, the electrical characteristics of the capacitance value and the leakage current value differ. The cause of this cannot be determined, but it may be due to differences in the condition (e.g. roughness) of the interface between the dielectric films of the lower and upper electrodes, or when the capacitive film is formed from multiple dielectric films as in the example in Figure 2. This is presumed to be due to differences in electron injection efficiency due to differences in the band gaps of the flange electrode film materials.
本発明の目的は、複数の誘電体膜から構成される容量素
子において、バイアス電圧の正負の変化により電気的特
性が変化することがない容量素子を提供することにある
。An object of the present invention is to provide a capacitive element composed of a plurality of dielectric films whose electrical characteristics do not change due to changes in positive or negative bias voltage.
本発明の容量素子は、第１の電極と前記第１の電極上に
設けられた第１の誘電体膜と前記第１の誘電体膜上に設
けられた第２の誘電体膜と前記第２の誘電体膜上に設け
られた第２の電極とからなる第１の容量素子と、少なく
とも前記第１の電極と同材質の第３の電極と前記第３の
電極上に設けられた前記第１の誘電体膜と同材質の第３
の誘電体膜と前記第３の誘電体膜上に設けられた前記第
２の誘電体膜と同材質の第４の誘電体膜と前記第４の誘
電体膜上に設けられた少なくとも前記第２と電極と同材
質の第４の電極とからなる第２の容量素子とを有し、前
記第１の電極と前記第４の電極とを接続し電気第２の電
極と前記第３の電極とを接続することにより１つの容量
素子として用いることを特徴とする。The capacitive element of the present invention includes a first electrode, a first dielectric film provided on the first electrode, a second dielectric film provided on the first dielectric film, and a first dielectric film provided on the first electrode. a first capacitive element consisting of a second electrode provided on a second dielectric film; a third electrode made of at least the same material as the first electrode; and a third electrode provided on the third electrode. A third dielectric film made of the same material as the first dielectric film.
a fourth dielectric film made of the same material as the second dielectric film provided on the third dielectric film, and at least the fourth dielectric film provided on the fourth dielectric film. 2 and a fourth electrode made of the same material as the electrode, the first electrode and the fourth electrode are connected, and the second electrode and the third electrode are connected. It is characterized in that it is used as one capacitive element by connecting them.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）、 （ｂ）は本発明の第１の実施例を説明
するための平面図及び縦断面図である。第１図（ａ）に
示すように、Ｓｉ基板１上には１００００００００Ａ厚
２２があり、その上に５０００Ａ厚のＰドープｐｏｌｙ
−８ｉ（多結晶シリコン）膜３１．３２．更に５０００
Ａ厚のＰＳＧ膜４．１００Ａ厚のＳ ｉ Ｏ２膜５１，
５２，１００Ａ厚のＳｉＮ膜６１，６２，５００．０大
要のＰドーフｐｏｌｙ−８ｉ膜７１，７２．５０００Ａ
厚のＰＳＧＳａＯ２μｍ厚のＡ（膜９１，９２がバター
ニングされている。FIGS. 1(a) and 1(b) are a plan view and a longitudinal sectional view for explaining a first embodiment of the present invention. As shown in FIG. 1(a), there is a 100000000A thickness 22 on the Si substrate 1, and a 5000A thick P-doped polyester is placed on top of it.
-8i (polycrystalline silicon) film 31.32. Another 5000
A-thick PSG film 4.100A-thick SiO2 film 51,
52,100A thick SiN film 61,62,500.0 P Dorf poly-8i film 71,72.5000A
PSGSaO 2 μm thick A (films 91 and 92 are patterned).
第１の容量素子Ｃ１を構成している容量膜は５ｉ０２膜
５１とＳｉＮ膜６１の２層からなり、ｐｏｌｙ−３ｉ膜
３１とｐｏｌｙ−３ｉ膜６１の２つの電極にはさまれて
いる。ｐｏｌｙ−３ｉ膜３１はＡｆｆ膜９１に接続され
、ｐｏｌｙ−８ｉ膜６１はＰＳＧＳａＯ２孔部１０１を
介してＡｎ膜９２に接続されている。５ｉＯｚ膜５１の
下のＰＳＧ膜４の開孔面積は１０００μｍｌである。も
う一方の第２の容量素子Ｃ２を構成している容量膜は５
ｉ（ｈ膜５２とＳｉＮ膜６２の２層からなり、ｐｏｌｙ
−３ｉ膜３２とｐｏｌｙ−８ｉ膜６２の２つの電極には
さまれており、ｐｏｌｙ−３ｉ膜３２はＡ、ｆｆ膜９２
に接続され、ｐｏｌｙ−８ｉ膜６２はＰＳＧＳａＯ２孔
部１０２を介してＡ１膜９１に接続されている。５ｉｆ
２膜５２の下のＰＳＧ膜４、の開孔面積は１０００μｍ
ｌである。このように、ＣＩを構成する一方の容量膜と
０２を構成するもう一方の容量膜は、上部電極と下部電
極が互いに交差して並列に接続されていることになり、
これら全てで、容量膜として５ｉＣｈｌＯＯ人、５ｉＮ
１００人の２層が重なった面積２０００μポの１つの容
量素子として用いることができる。The capacitive film constituting the first capacitive element C1 is composed of two layers, a 5i02 film 51 and a SiN film 61, and is sandwiched between two electrodes, a poly-3i film 31 and a poly-3i film 61. The poly-3i film 31 is connected to the Aff film 91, and the poly-8i film 61 is connected to the An film 92 via the PSGSaO2 hole 101. The open pore area of the PSG film 4 under the 5iOz film 51 is 1000 μml. The capacitive film constituting the other second capacitive element C2 is 5
It consists of two layers, i(h film 52 and SiN film 62, and is made of poly
-3i film 32 and poly-8i film 62, the poly-3i film 32 is A, ff film 92
The poly-8i film 62 is connected to the A1 film 91 via the PSGSaO2 hole 102. 5if
The open pore area of the PSG film 4 under the second film 52 is 1000 μm.
It is l. In this way, one capacitive film constituting CI and the other capacitive film constituting 02 are connected in parallel with the upper electrode and lower electrode crossing each other.
In all of these, 5iChlOO people and 5iN as capacitive membranes.
It can be used as one capacitive element with an area of 2000 μm made by overlapping two layers of 100 people.
このように本実施例によれば、複数の異なる材質からな
る容量膜を有する２つの容量素子を設け、互いに異なっ
た材質の容量膜に面している電極同士を接続して１つの
容量素子として用いるため、容量膜の材質のちがいから
起因する電気的特性は相殺されることになる。As described above, according to this embodiment, two capacitive elements each having a capacitive film made of a plurality of different materials are provided, and the electrodes facing the capacitive films made of different materials are connected to form one capacitive element. Therefore, the electrical characteristics caused by the difference in the material of the capacitive film are canceled out.
第２の実施例は、第１の実施例における第１図の１００
Ａ厚の５ｉｆｔ膜５１．５２を各４１００Ａ厚のＳｉＮ
膜に置きかえ、また１００Ａ厚のＳｉＮ膜６１，６２を
各々５００Ａ厚のＴ＆２０５膜に置き換えたものである
。その他の構造については第１の実施例と同様とする。The second embodiment is 100 in FIG. 1 in the first embodiment.
A 5ift film 51.52 with a thickness of 4100A each
In addition, the 100A thick SiN films 61 and 62 are each replaced with 500A thick T&205 films. The other structures are the same as those in the first embodiment.
すると、容量膜として５ｉ膜１００人厚、Ｔａｇｓ膜５
００人の２層が重なった面積２００μｍｌの容量素子が
得られ、第１の実施例と同様な効果が得られる。Then, as a capacitive film, a 5i film with a thickness of 100 mm and a Tags film with a thickness of 5
A capacitive element having an area of 200 μml in which two layers of 0.00000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000 layers overlapped layers overlap each other and the first embodiment can be obtained.
〔発明の効果〕
以上説明した様に、本発明による容量素子は並列に接続
されたそれぞれ材質の異なる二層と容量膜を有する２つ
の容量素子からなり、各々の異なった材質に面した下部
電極と上部電極が互いに交差して接続されている。従っ
て本発明の容量素子は構造的に両電極間で全く対称にな
っているため、両端の電極へ印加するバイアス電圧を正
負逆に入れ替えたとしてもその電気的特性は全く変わら
ないという効果を有している。[Effects of the Invention] As explained above, the capacitive element according to the present invention consists of two capacitive elements connected in parallel, each having two layers and a capacitive film made of different materials, and a lower electrode facing each different material. and upper electrodes are connected to cross each other. Therefore, since the capacitive element of the present invention is structurally completely symmetrical between the two electrodes, it has the effect that its electrical characteristics do not change at all even if the bias voltage applied to the electrodes at both ends is reversed. are doing.
第１図（ａ）、 （ｂ）は本発明の第１の実施例を説明
するための平面図及び縦断面図、第２図（ａ）。
（ｂ）は従来例を説明するための平面図及び縦断面図で
ある。
１・・・・・・Ｓｉ基板、２，５，５１．５２・・・・
・・５ｉｎ２膜、３，３１，３２，７，７１．７２・・
・・・・ｐｏｌｙ−３ｉ膜、４，８・・・・・・ＰＳＧ
膜、６，６１．６２・・・・・・ＳｉＮ膜、９，９１．
９２・・・・・・ＡＩ２膜、１０゜１０１．１０２・・
・・・・開孔部。FIGS. 1(a) and 1(b) are a plan view and a vertical cross-sectional view for explaining a first embodiment of the present invention, and FIG. (b) is a plan view and a vertical sectional view for explaining a conventional example. 1... Si substrate, 2, 5, 51.52...
・・5in2 membrane, 3, 31, 32, 7, 71.72・・
...poly-3i film, 4,8...PSG
Film, 6,61.62...SiN film, 9,91.
92...AI2 membrane, 10°101.102...
...Open hole.
Claims (1)
電体膜とこの第１の誘電体膜上に設けられた第２の誘電
体膜とこの第２の誘電体膜上に設けられた第２の電極と
からなる第１の容量素子と、少なくとも前記第１の電極
と同材質の第３の電極とこの第３の電極上に設けられた
前記第１の誘電体膜と同材質の第３の誘電体膜とこの第
３の誘電体膜上に設けられた前記第２の誘電体膜と同材
質の第４の誘電体膜とこの第４の誘電体膜上に設けられ
少なくとも前記第２の電極と同材質の第４の電極とから
なる第２の容量素子とを有し、前記第１の電極と前記第
４の電極とを接続し前記第２の電極と前記第３の電極と
を接続することにより１つの容量として用いることを特
徴とする容量素子。A first electrode, a first dielectric film provided on the first electrode, a second dielectric film provided on the first dielectric film, and a second dielectric film provided on the second dielectric film. a first capacitive element comprising a second electrode provided, a third electrode made of at least the same material as the first electrode, and the first dielectric film provided on the third electrode; a third dielectric film made of the same material; a fourth dielectric film made of the same material as the second dielectric film provided on the third dielectric film; and a fourth dielectric film provided on the fourth dielectric film. and a second capacitive element consisting of at least a fourth electrode made of the same material as the second electrode, the first electrode and the fourth electrode are connected, and the second electrode and the fourth electrode are connected to each other. A capacitor element characterized in that it is used as one capacitor by connecting it to a third electrode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21228489A JPH0376151A (en) | 1989-08-18 | 1989-08-18 | Capacitive element |
| EP90115184A EP0412514A1 (en) | 1989-08-08 | 1990-08-07 | Capacitance device |
| US07/564,250 US5083184A (en) | 1989-08-08 | 1990-08-08 | Capacitance device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21228489A JPH0376151A (en) | 1989-08-18 | 1989-08-18 | Capacitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0376151A true JPH0376151A (en) | 1991-04-02 |
Family
ID=16620054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21228489A Pending JPH0376151A (en) | 1989-08-08 | 1989-08-18 | Capacitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0376151A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002078024A1 (en) * | 2001-03-16 | 2002-10-03 | Hitachi, Ltd. | Thin film capacitor and thin film electronic component and method for fabricating the same |
| CN100454650C (en) * | 2003-11-28 | 2009-01-21 | 松下电器产业株式会社 | Energy device and manufacturing method thereof |
-
1989
- 1989-08-18 JP JP21228489A patent/JPH0376151A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002078024A1 (en) * | 2001-03-16 | 2002-10-03 | Hitachi, Ltd. | Thin film capacitor and thin film electronic component and method for fabricating the same |
| CN100454650C (en) * | 2003-11-28 | 2009-01-21 | 松下电器产业株式会社 | Energy device and manufacturing method thereof |
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