JPH0378404B2 - - Google Patents

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Publication number
JPH0378404B2
JPH0378404B2 JP18437084A JP18437084A JPH0378404B2 JP H0378404 B2 JPH0378404 B2 JP H0378404B2 JP 18437084 A JP18437084 A JP 18437084A JP 18437084 A JP18437084 A JP 18437084A JP H0378404 B2 JPH0378404 B2 JP H0378404B2
Authority
JP
Japan
Prior art keywords
fatty acid
resin composition
divalent
mold release
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18437084A
Other languages
Japanese (ja)
Other versions
JPS6162516A (en
Inventor
Toshiro Takeda
Akira Toko
Koichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP18437084A priority Critical patent/JPS6162516A/en
Publication of JPS6162516A publication Critical patent/JPS6162516A/en
Publication of JPH0378404B2 publication Critical patent/JPH0378404B2/ja
Granted legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は半導体素子を封止するための半導体封
止用樹脂組成物に関し、特に耐湿性、高温電気特
性等の信頼性が優れ、しかも成形時においては難
型性が良好で得られる成形品への捺印性も良好で
ある半導体封止用樹脂組成物に関するものであ
る。 〔従来技術〕 従来、半導体素子の封止技術としては金属やセ
ラミツク等を用いるハーメチツク方式が使用され
てきたが、生産性コスト面で樹脂封止の方が経済
的に有利となるため近年では樹脂による封止が主
流を占めつつある。 このような半導体封止用樹脂としては大量生産
に適する低圧トランスフアー成形法が可能な低圧
成形用エポキシ樹脂が広く一般に用いられてい
る。かかるトランスフアー成形法において成形に
より封止された半導体を金型から取り出せるよう
にするには予めエポキシ樹脂組成物中に内部離型
剤を添加することが常法である。従来からよく使
用される内部離型剤としてはステアリン酸のよう
な長鎖脂肪酸、ステアリン酸亜鉛のような長鎖脂
肪酸の金属塩、カルナバワツクスのような長鎖脂
肪酸のエステル系ワツクス、エチレンビスステア
リン酸アミドのようなビスアミド系ワツクス等が
知られているが、これら従来の離型剤は何れも耐
湿性、高温電気特性等の信頼性、離型性、成形品
表面への捺印性を全て満足するものとはいえなか
つた。 即ち、長鎖脂肪酸及びその金属塩類は離型性、
捺印性については比較的良好であるのに対し、プ
レツシヤークツカーテスト、プレツシヤークツカ
ーバイアステスト等の信頼性試験では不良が発生
し易く耐湿性が劣ることが認められている。また
エステル系ワツクスは離型性、信頼性は優れてい
るものの、捺印性に劣り、特に成形回数を重ねる
につれて捺印性が極端に悪化する。ビスアミド系
ワツクスは信頼性、捺印性は優れているものの離
型性に劣る欠点があつた。 〔発明の目的〕 本発明はかかる上記欠点を解決するため鋭意検
討を重ねた結果なされたもので、従来の半導体封
止用エポキシ樹脂に特定の二価脂肪酸ビスアミド
化合物を内部離型剤として添加することにより、
耐湿性、高温電気特性等の信頼性が優れかつ離型
性が良好で、しかも得られるIC封止成形品への
捺印性が良好な半導体封止用樹脂組成物を提供す
るにある。 〔発明の構成〕 本発明は (1) エポキシ樹脂及び式〔A〕で表わされる二価
脂肪酸ビスアミド化合物を0.01〜10重量%配合
してなることを特徴とする半導体封止用樹脂組
成物、 CH3(−CH2)−lNHCO(−CH2)−nCONH(−CH2)−
oCH3 〔A〕 (l、nは14以上の整数mは3以上の整数) および (2) 二価脂肪酸ビスアミド化合物が炭素数5以上
の二価脂肪酸と炭素数15以上の長鎖脂肪族第一
アミンとを縮合させてなることを特徴とする特
許請求の範囲第1項記載の半導体封止用樹脂組
成物および (3) 二価脂肪酸ビスアミド化合物の融点が80℃〜
140℃であることを特徴とする特許請求の範囲
第1項記載の半導体封止用樹脂組成物に関する
ものである。 本発明に用いられるエポキシ樹脂はビスフエノ
ールA型エポキシ樹脂、ノボラツク型エポキシ樹
脂、レゾルシン型エポキシ樹脂、ハロゲン化エポ
キシ樹脂、グリシジルエステル型エポキシ樹脂、
高分子型エポキシ樹脂等であり、硬化剤としては
アミン系硬化剤、脂肪族ポリアミン、ポリアミド
樹脂、芳香族ジアミン、酸無水物系硬化剤ルイス
酸錯化合物、芳香族ポリアミン、ポリカルボン
酸、ポリカルボン酸ヒドラジド、三弗化ホウ素モ
ノエチルアミン、ジシアンジアミド、イミダゾー
ル、フエノール樹脂、メラミン樹脂、アクリル樹
脂、ユリア樹脂、イソシアネート等であり、充填
剤としてはガラス繊維、金属ウイスカー、炭素繊
維、ケブラー繊維、ポリエステル繊維、ポリアミ
ド繊維、パルプ、アスベスト、結晶性シリカ、溶
融シリカ、アルミナ、炭酸カルシウム、炭酸マグ
ネシウム、水酸化カルシウム、水酸化アルミニウ
ム、三酸化アンチモン、タルク、酸化チタン等を
添加することができる。その他の添加剤としては
カーボンブラツク、酸化鉄などの着色剤およびカ
ツプリング剤等も添加することが可能である。ま
た通常の硬化促進剤も必要に応じて添加してもよ
い。 本発明で使用される離型剤、二価脂肪酸ビスア
ミド化合物は式〔A〕で表わされる。 CH3(−CH2)−lNHCO(−CH2)−nCONH(−CH2)−
oCH3 (l、nは14以上の整数、mは3以上の整数) 加えて従来よく使用される離型剤を併用するこ
とも可能である。二価脂肪酸ビスアミド化合物の
添加量は特に限定するものではないが好ましくは
0.01〜10重量%が望ましい。即ち二価脂肪酸ビス
アミドが0.01%以下では離型剤としての効果が発
現されず、逆に10%を越えるとエポキシ樹脂硬化
後の架橋密度が著しく低下するために硬化物の機
械特性、電気特性等が損われ、半導体素子の保護
機能が果せなくなるからである。 また式〔A〕で表わされる二価脂肪ビスアミド
化合物は炭素数5以上の二価脂肪酸と炭素15以上
の長鎖脂肪族第一アミンとを縮合させて得ること
ができる。 本発明は式〔A〕で表わされる二価脂肪酸ビス
アミド化合物をエポキシ樹脂の内部離型剤として
使用することにあり、本発明の方法により信頼
性、離型性、捺印性等を全て満足する半導体封止
用樹脂組成物を提供することが可能となつた。 従来のアミド系ワツクスは他のワツクスに比べ
て耐熱性が良好であるため、成形材料の内部離型
剤として広く用いられている。即ち高温の金型で
長時間成形作業を重ねても、金型表面ににじみ出
したワツクスの耐熱性が良好であることにより金
型内でゲル化し堆積するという事がない為成形品
の外観を著しく損うことがない。という理由によ
るものである。ところがこのように連続成形性の
優れている従来のアミド系ワツクスは信頼性、捺
印性等も良好である半面離型性が不充分であつ
た。従来のアミド系ワツクスの殆んどはステアリ
ン酸、ベヘニン酸、モンタン酸等の高級脂肪酸と
エチレンジアミン等の多価アミンを縮合させて得
られる分子内多価アミド化合物もしくは高級脂肪
酸とアンモニアを反応させさらにホルマリンでメ
チロール化して縮合させた分子内多価アミド化合
物であり、極性が高くエポキシ樹脂等との相溶性
に富んでいるために他の高級脂肪酸、高級脂肪酸
の金属塩、高級脂肪酸エステル等のワツクスに比
べて内部離型剤として同じ量を添加しても成形品
表面及び金型表面ににじみだすワツクス量が極め
て少なくなりこの結果離型性に劣ることになると
考えられる。またこのような高級脂肪酸分子内多
価アミド化合物は結晶性が高く、融点も115℃〜
160℃と高いことも離型性に劣る理由の一つであ
る。 分子内多価アミド化合物以外に高級脂肪酸とア
ンモニアと反応させてアミド化した高級脂肪酸末
端アミド化合物や不飽和脂肪酸分子内多価アミド
化合物がありこれらは80〜130℃と比較的低融点
のワツクスではあるが何れも耐熱性に劣り、長時
間成形性の点で満足のいくものではなかつた。 そこで本発明者らはアミド系ワツクスの耐熱
性、信頼性、捺印性の良好である特徴を活かしさ
らに離型性を向上させるために鋭意検討を重ねた
結果、炭素数0.5以上の二価飽和脂肪酸と炭素数
15以上の長鎖脂肪族第一アミンとを縮合させて得
られる二価脂肪酸ビスアミド化合物が融点が80〜
140℃と従来のアミド系ワツクスに比べて融点が
低く、離型性も良好で、しかも長時間成形性、信
頼性、捺印性等を全て満足させるという知見を
得、本発明を完成するに到つたものである。二価
飽和脂肪酸の炭素数を5、と長鎖脂肪族第一アミ
ンの炭素数を特に15以上と限定したのはこれ以下
の炭素数のもの同志を縮合させて得られる二価脂
肪酸ビスアミド化合物では離型性を発現できない
し、特に炭素数4以下の二価脂肪酸を用いると結
晶性が高くなり融点も140℃以上となり、これも
離型性を低下させる原因となるからである。 〔発明の効果〕 本発明はエポキシ樹脂、硬化剤、充填剤、各種
添加剤からなるエポキシ樹脂組成物に内部離型剤
として特定の二価脂肪酸ビスアミド化合物を配合
してなることを特徴とするものであり、トランス
フアー成形、射出成形等による電子部品の多数個
どりの成形に適し信頼性、捺印性、離型性、連続
成形性等全て満足せしめることができる。 次に本発明を実施例により具体的に説明する。 〔実施例〕 尚、以下において特に限定しない限り部とある
のは重量部を示すものである。 実施例 1 アジピン酸〔HOOC(−CH2)−4COOH〕146g
(1モル)、ステアリルアミン〔C18H37NH2〕538
g(2モル)およびトルエン100c.c.を温度計還流
冷却器、撹拌器を備えた1の三つ口フラスコに
仕込み、撹拌しながら120℃になるまで加熱した。
120℃〜130℃でカルボン酸とアミンの縮合反応が
活発となるが、生成した水をトルエンで共沸させ
て系外に除きながら約3時間、反応系を120〜130
℃に保つ。次に温度を180℃まで2時間かけて
徐々に昇温させて縮合反応を完結した。反応系中
に残存しているトルエンを減圧によつて除去し、
生成物を130℃以上の温度で取り出して冷却固化
させた。 反応生成物の融点を測定した結果136℃であつ
た。一方生成物の赤外吸収スペクトルを測定する
と、原料カルボン酸の1710cm-1のカルボニルの吸
収が完全に消失し、代わりにアミドのカルボニル
の吸収が1640cm-1に現われ、二価カルボン酸とア
ミンの縮合反応はほぼ定量的におこり、得られた
反応生成物は所望の二価脂肪酸ビスアミド化合物
であることが確認された。 次にこの二価脂肪酸ビスアミド化合物5.5部を
内部離型剤としてクレゾールノボラツクエポキシ
(エポキシ当量220)100部、臭素化フエノールノ
ボラツクエポキシ(エポキシ当量300)30部、フ
エノールノボラツク硬化剤(分子量750)60部、
2−エチル−4−メチルイミダゾール0.5部、結
晶シリカ粉末400部、シランカツプリング剤2.0
部、三酸化アンチモン30部、カーボンブラツク
2.0部とともに配合し混合、混練して得た成形材
料を半導体封止用樹脂組成物とした。 実施例 2 スベリン酸〔HOOC(−CH2)−6COOH〕174g
(1モル)、ステアリルアミン538g(2モル)お
よびトルエン130c.c.を実施例1と同様にして反応
し、二価脂肪酸ビスアミド化合物を得た。この化
合物の融点は128℃であつた。続いてこの化合物
3.5部を内部離型剤として実施例1と同様の組成
で配合し、半導体封止用樹脂組成物を得た。 実施例 3 セパシン酸〔HOOC(−CH2)−8COOH〕202g
(1モル)、ステアリルアミン538g(2モル)お
よびトルエン150c.c.を実施例1と同様にして反応
し、高級脂肪酸分子内モノアミド化合物を得た。
この化合物の融点は123℃であつた。続いてこの
化合物2.5部を内部離型剤として実施例1と同様
の組成で配合し半導体封止用樹脂組成物を得た。 実施例 4 実施例1で得た二価脂肪酸ビスアミド化合物
5.0部とカルナバワツクス0.5部とを内部離型剤と
して実施例1と同様の組成で配合して半導体封止
用エポキシ樹脂組成物を得た。 比較例 1〜6 内部離型剤として下記の第1表に記載したもの
以外は全て実施例1と同様の組成で配合し6種の
半導体封止用エポキシ樹脂組成物を得た。
[Industrial Field of Application] The present invention relates to a semiconductor encapsulating resin composition for encapsulating semiconductor elements, which has particularly excellent reliability such as moisture resistance and high-temperature electrical properties, and is not difficult to mold during molding. The present invention relates to a resin composition for semiconductor encapsulation that has good marking properties on molded products obtained. [Prior art] Conventionally, a hermetic method using metals, ceramics, etc. has been used as a encapsulation technology for semiconductor devices, but resin encapsulation has become more economically advantageous in terms of productivity and cost, so resin encapsulation has become more popular in recent years. encapsulation is becoming mainstream. As such semiconductor encapsulating resins, low-pressure molding epoxy resins that can be subjected to low-pressure transfer molding methods suitable for mass production are widely used. In order to enable the molded semiconductor to be removed from the mold in such a transfer molding method, it is a common practice to add an internal mold release agent to the epoxy resin composition in advance. Conventionally used internal mold release agents include long chain fatty acids such as stearic acid, long chain fatty acid metal salts such as zinc stearate, long chain fatty acid ester waxes such as carnauba wax, and ethylene bis. Bisamide-based waxes such as stearic acid amide are known, but all of these conventional mold release agents have poor moisture resistance, reliability such as high-temperature electrical properties, mold releasability, and imprintability on the surface of molded products. I couldn't say it was satisfactory. That is, long-chain fatty acids and their metal salts have mold release properties,
Although the imprintability is relatively good, it has been found that defects are likely to occur and the moisture resistance is poor in reliability tests such as the pressure Jakartsker test and the pressure Jagsker bias test. Furthermore, although ester waxes have excellent mold releasability and reliability, they are inferior in stamping properties, and in particular, as the number of molding increases, the stamping properties deteriorate extremely. Although bisamide waxes have excellent reliability and imprintability, they have the disadvantage of poor mold release properties. [Object of the Invention] The present invention was made as a result of intensive studies to solve the above-mentioned drawbacks, and it involves adding a specific divalent fatty acid bisamide compound as an internal mold release agent to the conventional epoxy resin for semiconductor encapsulation. By this,
It is an object of the present invention to provide a resin composition for semiconductor encapsulation that has excellent reliability in terms of moisture resistance, high-temperature electrical properties, etc., good mold releasability, and also has good imprintability on the resulting IC encapsulation molded product. [Structure of the Invention] The present invention provides (1) a resin composition for semiconductor encapsulation, characterized in that it contains an epoxy resin and a divalent fatty acid bisamide compound represented by formula [A] in an amount of 0.01 to 10% by weight, CH 3 (−CH 2 )− l NHCO(−CH 2 )− n CONH(−CH 2 )−
o CH 3 [A] (l, n are integers of 14 or more, m is an integer of 3 or more) and (2) the divalent fatty acid bisamide compound is a divalent fatty acid with 5 or more carbon atoms and a long chain aliphatic group with 15 or more carbon atoms. The resin composition for semiconductor encapsulation according to claim 1, characterized in that it is formed by condensing with a primary amine, and (3) the divalent fatty acid bisamide compound has a melting point of 80°C or more.
The present invention relates to a resin composition for semiconductor encapsulation according to claim 1, characterized in that the temperature is 140°C. The epoxy resins used in the present invention include bisphenol A type epoxy resins, novolak type epoxy resins, resorcinol type epoxy resins, halogenated epoxy resins, glycidyl ester type epoxy resins,
Polymeric epoxy resins, etc., and curing agents include amine curing agents, aliphatic polyamines, polyamide resins, aromatic diamines, acid anhydride curing agents, Lewis acid complex compounds, aromatic polyamines, polycarboxylic acids, polycarboxylic Acid hydrazide, boron trifluoride monoethylamine, dicyandiamide, imidazole, phenolic resin, melamine resin, acrylic resin, urea resin, isocyanate, etc. Fillers include glass fiber, metal whisker, carbon fiber, Kevlar fiber, polyester fiber, Polyamide fibers, pulp, asbestos, crystalline silica, fused silica, alumina, calcium carbonate, magnesium carbonate, calcium hydroxide, aluminum hydroxide, antimony trioxide, talc, titanium oxide, etc. can be added. Other additives that may be added include coloring agents such as carbon black and iron oxide, and coupling agents. Further, a conventional curing accelerator may also be added as necessary. The mold release agent used in the present invention, a divalent fatty acid bisamide compound, is represented by formula [A]. CH 3 (−CH 2 )− l NHCO(−CH 2 )− n CONH(−CH 2 )−
o CH 3 (l and n are integers of 14 or more, m is an integer of 3 or more) In addition, it is also possible to use a conventionally commonly used mold release agent. The amount of divalent fatty acid bisamide compound added is not particularly limited, but preferably
0.01 to 10% by weight is desirable. That is, if the divalent fatty acid bisamide content is less than 0.01%, it will not be effective as a mold release agent, and if it exceeds 10%, the crosslinking density after curing the epoxy resin will decrease significantly, which will affect the mechanical properties, electrical properties, etc. of the cured product. This is because the protection function of the semiconductor element cannot be fulfilled. Further, the divalent fatty bisamide compound represented by formula [A] can be obtained by condensing a divalent fatty acid having 5 or more carbon atoms with a long-chain aliphatic primary amine having 15 or more carbon atoms. The present invention is to use a divalent fatty acid bisamide compound represented by formula [A] as an internal mold release agent for an epoxy resin, and a semiconductor that satisfies all of reliability, mold releasability, imprintability, etc. by the method of the present invention. It has become possible to provide a sealing resin composition. Conventional amide waxes have better heat resistance than other waxes, and are therefore widely used as internal mold release agents for molding materials. In other words, even if the molding process is repeated for a long time in a high-temperature mold, the wax that oozes out onto the mold surface has good heat resistance, so it does not gel and accumulate inside the mold, which significantly improves the appearance of the molded product. There's nothing to lose. This is for the reason. However, while the conventional amide waxes, which have excellent continuous moldability, have good reliability and imprintability, they have insufficient mold releasability. Most conventional amide-based waxes are made by reacting intramolecular polyamide compounds or higher fatty acids with ammonia, which are obtained by condensing higher fatty acids such as stearic acid, behenic acid, and montanic acid with polyvalent amines such as ethylenediamine. It is an intramolecular polyamide compound that is methylolated and condensed with formalin, and has high polarity and is highly compatible with epoxy resins, etc., so it can be used in waxes such as other higher fatty acids, metal salts of higher fatty acids, and higher fatty acid esters. It is thought that even if the same amount of internal mold release agent is added, the amount of wax that oozes out onto the surface of the molded product and the mold is extremely small, resulting in inferior mold release properties. In addition, these higher fatty acid intramolecular polyamide compounds have high crystallinity and a melting point of 115℃~
The high temperature of 160°C is also one of the reasons for poor mold release properties. In addition to intramolecular polyamide compounds, there are higher fatty acid terminal amide compounds that are amidated by reacting higher fatty acids with ammonia, and unsaturated fatty acid intramolecular polyamide compounds, which have a relatively low melting point of 80 to 130°C. However, all of them had poor heat resistance and were not satisfactory in terms of long-term moldability. Therefore, the present inventors have made extensive studies to take advantage of the heat resistance, reliability, and good marking properties of amide waxes to further improve mold releasability, and have found that divalent saturated fatty acids with carbon numbers of 0.5 or more and carbon number
A divalent fatty acid bisamide compound obtained by condensing with a long chain aliphatic primary amine of 15 or more has a melting point of 80~
With the knowledge that it has a lower melting point of 140°C than conventional amide waxes, good mold releasability, and satisfies all aspects such as long-term moldability, reliability, and imprintability, we have completed the present invention. It is ivy. The number of carbon atoms in the divalent saturated fatty acid is limited to 5, and the number of carbon atoms in the long-chain aliphatic primary amine is specifically limited to 15 or more. This is because it cannot exhibit mold releasability, and especially when divalent fatty acids having carbon atoms of 4 or less are used, the crystallinity becomes high and the melting point becomes 140° C. or higher, which also causes a decrease in mold releasability. [Effects of the Invention] The present invention is characterized in that a specific divalent fatty acid bisamide compound is blended as an internal mold release agent into an epoxy resin composition consisting of an epoxy resin, a curing agent, a filler, and various additives. It is suitable for molding a large number of electronic parts by transfer molding, injection molding, etc., and can satisfy all aspects such as reliability, stampability, mold releasability, and continuous moldability. Next, the present invention will be specifically explained using examples. [Example] In the following, parts refer to parts by weight unless otherwise specified. Example 1 Adipic acid [HOOC( -CH2 ) -4COOH ] 146g
(1 mol), stearylamine [C 18 H 37 NH 2 ] 538
(2 mol) and toluene 100 c.c. were placed in a three-necked flask (No. 1) equipped with a thermometer, reflux condenser, and stirrer, and heated to 120° C. with stirring.
The condensation reaction between carboxylic acid and amine becomes active at 120°C to 130°C.
Keep at ℃. Next, the temperature was gradually raised to 180°C over 2 hours to complete the condensation reaction. Toluene remaining in the reaction system is removed by reduced pressure,
The product was taken out at a temperature above 130°C and solidified by cooling. The melting point of the reaction product was measured and found to be 136°C. On the other hand, when the infrared absorption spectrum of the product was measured, the carbonyl absorption at 1710 cm -1 of the starting carboxylic acid completely disappeared, and instead the amide carbonyl absorption appeared at 1640 cm -1 , indicating that the dihydric carboxylic acid and amine The condensation reaction occurred almost quantitatively, and the resulting reaction product was confirmed to be the desired divalent fatty acid bisamide compound. Next, 5.5 parts of this divalent fatty acid bisamide compound was used as an internal mold release agent, 100 parts of cresol novolac epoxy (epoxy equivalent: 220), 30 parts of brominated phenol novolac epoxy (epoxy equivalent: 300), and a phenol novolac hardener (molecular weight: 750). ) 60 copies,
0.5 parts of 2-ethyl-4-methylimidazole, 400 parts of crystalline silica powder, 2.0 parts of silane coupling agent
30 parts antimony trioxide, carbon black
A molding material obtained by blending, mixing, and kneading with 2.0 parts was used as a resin composition for semiconductor encapsulation. Example 2 Suberic acid [HOOC(-CH 2 )- 6 COOH] 174g
(1 mol), 538 g (2 mol) of stearylamine, and 130 c.c. of toluene were reacted in the same manner as in Example 1 to obtain a divalent fatty acid bisamide compound. The melting point of this compound was 128°C. Then this compound
A resin composition for semiconductor encapsulation was obtained by blending 3.5 parts as an internal mold release agent in the same composition as in Example 1. Example 3 Sepacic acid [HOOC(-CH 2 )- 8 COOH] 202g
(1 mol), 538 g (2 mol) of stearylamine, and 150 c.c. of toluene were reacted in the same manner as in Example 1 to obtain a higher fatty acid intramolecular monoamide compound.
The melting point of this compound was 123°C. Subsequently, 2.5 parts of this compound was blended as an internal mold release agent in the same composition as in Example 1 to obtain a resin composition for semiconductor encapsulation. Example 4 Divalent fatty acid bisamide compound obtained in Example 1
An epoxy resin composition for semiconductor encapsulation was obtained by blending 5.0 parts of carnauba wax and 0.5 parts of carnauba wax as an internal mold release agent in the same composition as in Example 1. Comparative Examples 1 to 6 Six types of epoxy resin compositions for semiconductor encapsulation were obtained by blending the same compositions as in Example 1 except for those listed in Table 1 below as internal mold release agents.

【表】 上記組成物をトランスフアー成形機により圧力
60Kg/cm2、金型温度175℃、2分30秒の条件で成
型品を成形しさらに175℃で4時間ポストキユア
ーを行ない半導体封止物を得た。成形時の離型性
および長時間成形性、成形品の信頼性、捺印性は
第2表に示される通りであつた。各特性の評価は
以下のようにして行なつた。 (a) 離型性 金型上下のうち下型のみノツクピン付きのも
ので連続成形を行ない上型(ノツクピンなし)
に成形品が付着し容易に離型しなくなつた成形
回数で評価した。 (b) 長時間成形性 金型表面が鏡面状態であるもので連続成形を
実施し成形品表面が汚れて外観にくもりが生じ
始めた時の成形回数で示した。 (c) 信頼性 得られたIC封止物についてプレツシヤーク
ツカーテスト(PCT:120℃水蒸気、2気圧)
を行ない、アルミ配線の腐蝕を調べた。アルミ
ニウム腐蝕によるオープン発生を検出し初期不
良発生時間で表現した。 (d) 捺印性 得られたIC封止物表面にマーケム社製
#7224シルバーインクで捺印し、150℃で1時
間インクキユアーを行なつた後セロテープで引
き剥しテストを実施し、少しでも文字の欠落の
ある場合は不良とした。
[Table] The above composition was pressurized using a transfer molding machine.
A molded product was molded under the conditions of 60 kg/cm 2 , a mold temperature of 175°C, and 2 minutes and 30 seconds, and then post-cured at 175°C for 4 hours to obtain a semiconductor sealed product. The mold releasability during molding, long-term moldability, reliability of the molded product, and stampability were as shown in Table 2. Evaluation of each characteristic was performed as follows. (a) Mold release property Continuous molding is performed with only the lower mold having a dowel pin, and the upper mold (without a dowel pin)
Evaluation was made based on the number of moldings until the molded product adhered to the surface and could no longer be easily released from the mold. (b) Long-term moldability It was expressed as the number of molding times when the surface of the molded product became dirty and the appearance began to become cloudy when continuous molding was performed using a mold with a mirror-like surface. (c) Reliability The obtained IC encapsulation was subjected to pressure checker test (PCT: 120℃ steam, 2 atmospheres)
The corrosion of the aluminum wiring was investigated. The occurrence of open circuits due to aluminum corrosion was detected and expressed as the initial failure occurrence time. (d) Imprintability The surface of the obtained IC encapsulation was imprinted using #7224 silver ink manufactured by Markem, and after curing the ink at 150°C for 1 hour, a peeling test was performed with cellophane tape to ensure that even the slightest character was missing. If there is, it is considered defective.

【表】【table】

【表】【table】

【表】【table】

Claims (1)

【特許請求の範囲】 1 エポキシ樹脂および式〔A〕で表わされる二
価脂肪酸ビスアミド化合物を0.01〜10重量%配合
してなることを特徴とする半導体封止用樹脂組成
物。 CH3(−CH2)−lNHCO(−CH2)−nCONH(−CH2)−
oCH3 (l、nは14以上の整数、mは3以上の整数) 2 二価脂肪酸ビスアミド化合物が炭素数5以上
の二価脂肪酸と炭素数15以上の長鎖脂肪族第一ア
ミンとを縮合させてなることを特徴とする特許請
求の範囲第1項記載の半導体封止用樹脂組成物。 3 二価脂肪酸ビスアミド化合物の融点が80〜
140℃であることを特徴とする特許請求の範囲第
1項記載の半導体封止用樹脂組成物。
[Scope of Claims] 1. A resin composition for semiconductor encapsulation, comprising 0.01 to 10% by weight of an epoxy resin and a divalent fatty acid bisamide compound represented by formula [A]. CH 3 (−CH 2 )− l NHCO(−CH 2 )− n CONH(−CH 2 )−
o CH 3 (l, n are integers of 14 or more, m is an integer of 3 or more) 2 The divalent fatty acid bisamide compound combines a divalent fatty acid with 5 or more carbon atoms and a long-chain aliphatic primary amine with 15 or more carbon atoms. The resin composition for semiconductor encapsulation according to claim 1, characterized in that it is formed by condensation. 3 The melting point of the divalent fatty acid bisamide compound is 80~
The resin composition for semiconductor encapsulation according to claim 1, characterized in that the temperature is 140°C.
JP18437084A 1984-09-05 1984-09-05 Resin composition for sealing semiconductor Granted JPS6162516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18437084A JPS6162516A (en) 1984-09-05 1984-09-05 Resin composition for sealing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18437084A JPS6162516A (en) 1984-09-05 1984-09-05 Resin composition for sealing semiconductor

Publications (2)

Publication Number Publication Date
JPS6162516A JPS6162516A (en) 1986-03-31
JPH0378404B2 true JPH0378404B2 (en) 1991-12-13

Family

ID=16152031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18437084A Granted JPS6162516A (en) 1984-09-05 1984-09-05 Resin composition for sealing semiconductor

Country Status (1)

Country Link
JP (1) JPS6162516A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6475554A (en) * 1987-09-17 1989-03-22 Toshiba Corp Epoxy resin composition and resin-sealing type semiconductor device
JP2768695B2 (en) * 1988-08-25 1998-06-25 鐘淵化学工業株式会社 Molding resin composition
JPH06200127A (en) * 1993-01-07 1994-07-19 Matsushita Electric Works Ltd Epoxy resin molding material for sealing

Also Published As

Publication number Publication date
JPS6162516A (en) 1986-03-31

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