JPH0380901A - Method and apparatus for refining crystal - Google Patents

Method and apparatus for refining crystal

Info

Publication number
JPH0380901A
JPH0380901A JP21904289A JP21904289A JPH0380901A JP H0380901 A JPH0380901 A JP H0380901A JP 21904289 A JP21904289 A JP 21904289A JP 21904289 A JP21904289 A JP 21904289A JP H0380901 A JPH0380901 A JP H0380901A
Authority
JP
Japan
Prior art keywords
crystals
container
screw conveyor
moving means
melting section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21904289A
Other languages
Japanese (ja)
Other versions
JP2528364B2 (en
Inventor
Minoru Morita
稔 守田
Kazuto Nakamaru
中丸 和登
Keizo Takegami
敬三 竹上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsukishima Kikai Co Ltd
Original Assignee
Tsukishima Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsukishima Kikai Co Ltd filed Critical Tsukishima Kikai Co Ltd
Priority to JP1219042A priority Critical patent/JP2528364B2/en
Publication of JPH0380901A publication Critical patent/JPH0380901A/en
Application granted granted Critical
Publication of JP2528364B2 publication Critical patent/JP2528364B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To improve the productivity in refining, promote the maintainability, and heighten the effect of refining by providing a transfer means to transfer crystals forcibly toward a hot melting section. CONSTITUTION:There are provided at one end of a vessel 1 a hot melting section 2 and a discharge port 3 for a melted liquid M1 which is melted in the section 2, while, at the other and thereof, a feed port 4 for crystal slurry M0, a discharge port 5 for reflux and mother liquor M2 having been used in refining and a transfer means 6 to forcibly transfer crystals from said other end toward one end in the vessel 1 are disposed. The crystals in the crystal slurry M0 fed from the port 5 of the refining apparatus 1 is forcibly moved by the means 6 so that the crystals are introduced into the melting section 2 to be melted on or near the surfaces thereof. Further, part of the melted liquid M1 is taken out as a product through the port 3, while part of the melted liquid is transferred as reflux liquid from one end of the other end of the vessel 1 to be countercurrently brought into contact with the moving crystals, while the crystals and mother liquor are taken out from the discharge port 5.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、共晶系有機物などの結晶精製方法およびその
装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for purifying crystals of eutectic organic substances, etc., and an apparatus therefor.

〔従来の技術〕[Conventional technology]

共晶系有機物の母液から一成分の結晶を溶融精製するこ
とが要求されることがある。たとえば、ナフタリン、バ
ラキシレン、バラジクロルベンゼン(PDCB)などの
溶融精製である。
It may be required to melt and purify crystals of one component from a mother liquor of eutectic organics. For example, it is the melt purification of naphthalene, vala-xylene, vala-dichlorobenzene (PDCB), etc.

この種の溶融精製方法としては、特公昭415733号
および54−34705号公報記載のものが知られてい
る。かかる各先行例において、精製塔の下部に電気ヒー
タからなる加熱溶融部を有するが、母液およびその中に
含まれる結晶は自然重力沈降により下方に移動するよう
になっている。
As this type of melt purification method, those described in Japanese Patent Publication No. 415733 and Japanese Patent Publication No. 54-34705 are known. In each of these prior examples, a heating melting section consisting of an electric heater is provided at the bottom of the purification tower, but the mother liquor and the crystals contained therein are adapted to move downward due to natural gravity settling.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、前記従来例では、母液およびその中に含まれる
結晶は自然重力沈降により下方に移動するようになって
いるので、単位時間当たりの生産性がきわめて悪い。
However, in the conventional example, the mother liquor and the crystals contained therein move downward due to natural gravity sedimentation, so the productivity per unit time is extremely poor.

また、第5図のように、生成した結晶が、精製塔l内の
下方に高さ方向に設けた加熱管9群の根元まで沈降せず
、その加熱管9群頂部レベル間を繋ぐようなブリッジ現
象を生じ(ブリッジの下面を符号B、rで示した)、そ
の下方に結晶が移行しない空隙またはデッドスペースD
ができ、結晶の精製が殆ど行われないまま、取出口3か
ら取り出されることが多い。しかるに、このような、ブ
リッジ現象が生じた場合、その付着結晶の掻き取りを行
わなければならないので、多大なメンテナンス性を要す
るとともに、結晶の精製効果が低下する。
In addition, as shown in Fig. 5, the generated crystals do not settle to the base of the 9 groups of heating tubes installed in the lower part of the refining column 1 in the height direction, but instead connect the top levels of the 9 groups of heating tubes. A void or dead space D that causes a bridging phenomenon (the lower surface of the bridge is indicated by symbols B and r) and below which crystals do not migrate.
The crystals are often taken out from the outlet 3 without being purified. However, when such a bridging phenomenon occurs, the adhering crystals must be scraped off, which requires a great deal of maintenance and reduces the crystal purification effect.

さらに、結晶ベッドB内部においても、結晶の円滑な1
下方への移動がなされないため、第5図に示すように、
結晶の塊Cが生じ易く、この塊Cの下方に、結晶の下降
がこの塊Cに遮られて生じる空間dができ、ある時にお
いて塊Cが突然落下し、この落下の際に、空間dの空気
が突然上昇し、結晶の下降流および還流流を乱し、精製
効果を低下させることもある。
Furthermore, inside the crystal bed B, the smooth 1
Since there is no downward movement, as shown in Figure 5,
A lump C of crystal is likely to be formed, and a space d is created below this lump C as the descent of the crystal is blocked by this lump C.At some point, the lump C suddenly falls, and during this fall, a space d is created. The air may suddenly rise and disturb the downward flow and reflux flow of the crystal, reducing the purification effect.

そこで、本発明の主たる目的は、精製に当たっての生産
性が著しく高まるとともに、メンテナンス性に優れ、か
つ精製効果が高い結晶の精製方法およびその装置を提供
することにある。
SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide a method and apparatus for refining crystals, which significantly increases productivity during purification, is easy to maintain, and has a high purification effect.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題を解決するための本発明法は、容器内の一端部
に結晶の加熱溶融部とこの加熱溶融部により溶融された
溶融液の取出口とを有し、他端部側に結晶スラリーの供
給口と精製に供した還流液と母液の排出口と、容器内部
において結晶を前記他端部側から一端部側に強制的に移
動させる移動手段とを備え、前記結晶スラリーの供給口
および還流液と母液の排出口は前記移動手段より他端部
側に形成された精製装置を用い、 前記供給口から供給した結晶スラリー中の結晶を前記移
動手段により強制的に移動させながら一端部の加熱溶融
部に導き、この加熱溶融部表面またはその近傍において
結晶の溶融を行うとともに、溶融液の一部を製品として
取出口から取り出す一方で、溶融液の一部を還流液とし
て一端部から他端部に向かって移動させ、この移動過程
において一端部に向かって移動する結晶と向流的に接触
させ、結晶と母液を前記排出口から取り出すことを特徴
とするものである。
The method of the present invention for solving the above problems has a heating melting part for the crystals at one end in the container and an outlet for the melt melted by the heating melting part, and a crystal slurry at the other end. A supply port, a discharge port for the reflux liquid and mother liquor subjected to purification, and a moving means for forcibly moving the crystals from the other end side to the one end side inside the container, and the crystal slurry supply port and the reflux The discharge port for the liquid and mother liquor is formed using a refining device formed on the other end side of the moving means, and the crystals in the crystal slurry supplied from the supply port are forcibly moved by the moving means while heating one end. The crystals are melted on the surface of the melting zone or in the vicinity of the heated melting zone, and a part of the melt is taken out as a product from the outlet, while a part of the melt is passed from one end to the other as a reflux liquid. During this moving process, the crystals are brought into countercurrent contact with the crystals moving toward one end, and the crystals and mother liquor are taken out from the outlet.

また、本発明装置は、容器内の一端部に結晶の加熱溶融
部とこの加熱溶融部により溶融された溶融液の取出口と
を有し、他端部側に結晶スラリーの供給口と精製に供し
た還流液と母液の排出口と、容器内部において結晶を前
記他端部側から一端部側に強制的に移動させる移動手段
とを備え、前記結晶スラリーの供給口および還流液と母
液の排出口は前記移動手段より他端部側に形成されたこ
とを特徴とするものである。
Furthermore, the apparatus of the present invention has a heating melting section for crystals and an outlet for the melt melted by the heating melting section at one end of the container, and a supply port for crystal slurry and a refining port at the other end. The supply port for the crystal slurry and the discharge port for the reflux liquid and mother liquor are provided, and a moving means for forcibly moving the crystals from the other end side to the one end side inside the container. The present invention is characterized in that the outlet is formed closer to the other end than the moving means.

〔作用〕[Effect]

本発明では、特に結晶を強制的に加熱溶融部に向かって
移動させる移動手段を設けて、結晶の移動を促進させる
ので、従来の自然重力沈降の場合に比較して、単位時間
当たりの生産性は、たとえば後記実施例のように6〜8
倍にも高まる。
In the present invention, since the movement of the crystals is promoted by providing a moving means for forcibly moving the crystals toward the heated melting zone, the productivity per unit time is improved compared to the conventional natural gravity sedimentation. For example, as in the examples below, 6 to 8
It will increase twice as much.

また、結晶の強制的移動に伴って、結晶の自然沈降の場
合と比較して結晶の移動速度が速まり、精製塔内面や前
述の加熱管群への結晶の付着やブリッジ化を防止でき、
もって長時間の連続運転が可能となる。さらに、生成ベ
ッドの内部においても結晶のブロック化や偏在を防止し
て均一な結晶ベッドを生成させることができ、結晶の移
動および還流液の移動の乱れを防止でき、この面からも
精製効果を高めることができる。
Additionally, due to the forced movement of the crystals, the movement speed of the crystals is faster than in the case of natural settling of the crystals, and it is possible to prevent the crystals from adhering to the inner surface of the refining column or the aforementioned heating tube group, and forming bridging.
This allows continuous operation for long periods of time. Furthermore, it is possible to prevent blocking and uneven distribution of crystals inside the production bed to generate a uniform crystal bed, and to prevent disturbances in the movement of crystals and reflux liquid, which also improves the purification effect. can be increased.

〔発明の具体的構成〕[Specific structure of the invention]

以下本発明を図面に示す具体例に沿って詳説する。 The present invention will be explained in detail below with reference to specific examples shown in the drawings.

なお、本発明に係る精製塔は、縦型の他、横形でもよい
が、以下主に縦型の例に沿って説明する。
Note that the purification tower according to the present invention may be of a horizontal type as well as a vertical type, but the following description will mainly be based on an example of a vertical type.

第1図は本発明装置例を示したもので、1は縦型容器と
しての円筒形精製塔で、その下部に結晶の加熱溶融部2
とこの加熱溶融部2により溶融された溶融液M1の取出
口3とを有する。
Figure 1 shows an example of the apparatus of the present invention, in which 1 is a cylindrical refining tower serving as a vertical vessel, and a crystal heating and melting section 2 is located at the bottom of the column.
and an outlet 3 for the molten liquid M1 melted by the heating melting section 2.

また、精製塔1の上部には、結晶スラリーの供給口4と
、精製に供した母液M2の排出口5と、内部において結
晶スラリー中の結晶を下方に強制的に流下させる移動手
段6、この例では流下手段とを備えている。
Further, in the upper part of the purification tower 1, a supply port 4 for crystal slurry, a discharge port 5 for the mother liquor M2 subjected to purification, a moving means 6 for forcibly flowing the crystals in the crystal slurry downward, and In the example, it is equipped with a flow means.

また、精製塔Iの下部には、上部管板7および下部管板
8が上下に間隔をおいて塔内を仕切っており、上部管板
7から多数の有底加熱管9.9・・・が突設されている
。これに対して、下部管板8から上下開放の供給管10
.10・・・が突設され、前記加熱管9内に間隔を置い
て挿入されている。さらに、下部管板8と塔工の底板I
Bとの間に連通して熱媒体H0たとえば温水の供給口1
1が形成されている。また、下部管板8と上部管板7と
の間に連通して使用済熱媒体H3の排出口12が形成さ
れている。一方、加熱管9の高さ方向中間には、スクリ
ーン13が支持部材14を介して設けられており、この
スクリーン13と上部管板Tとの間に、前記の取出口3
が連通している。スクリーン13のメツシュは、対象の
結晶を全くまたはほとんど透過させない大きさとされる
Further, in the lower part of the purification tower I, an upper tube sheet 7 and a lower tube sheet 8 are vertically spaced apart to partition the inside of the tower, and from the upper tube sheet 7 to a large number of bottomed heating tubes 9, 9, . . . is installed protrudingly. On the other hand, a supply pipe 10 that is open vertically from the lower tube plate 8
.. 10 are provided protrudingly and inserted into the heating tube 9 at intervals. Furthermore, the lower tube plate 8 and the bottom plate I of the tower
A heating medium H0, for example, a hot water supply port 1, is connected to the heating medium H0.
1 is formed. Further, a discharge port 12 for the used heat medium H3 is formed in communication between the lower tube sheet 8 and the upper tube sheet 7. On the other hand, a screen 13 is provided at the middle in the height direction of the heating tube 9 via a support member 14, and between this screen 13 and the upper tube plate T, the above-mentioned outlet 3 is provided.
are communicating. The mesh of the screen 13 is sized so that it does not transmit any or very little through the target crystal.

他方、精製塔1の上部の排出口5の手前にもスクリーン
15が配設され、このメツシュも同様に対象の結晶を全
くまたはほとんど透過させない大きさとされている。
On the other hand, a screen 15 is also disposed in front of the discharge port 5 at the upper part of the purification tower 1, and this mesh is also sized to not allow any or almost any target crystals to pass through.

さらに、精製塔1の上板IAを貫通してスクリューコン
ベア6が設けられており、その軸はシールボックス16
によりシールされている。このスクリューコンベア6は
モータ17の出力を減速機18を介して回転せられる。
Furthermore, a screw conveyor 6 is provided passing through the upper plate IA of the purification tower 1, and its shaft is attached to a seal box 16.
It is sealed by. This screw conveyor 6 is rotated by the output of a motor 17 via a reduction gear 18.

一方、上板IAにはブラケットI9が固定され、このブ
ラケット19に上下動用往復動シリンダー20および案
内軸21が縦向きに固定されている。
On the other hand, a bracket I9 is fixed to the upper plate IA, and a reciprocating cylinder 20 for vertical movement and a guide shaft 21 are vertically fixed to this bracket 19.

22は可動板で、前記シリンダー20のロッド先端が固
定されている。また、モータ17、減速機18およびス
クリューコンベア6の軸を保持している。さらに、案内
軸21が貫通され、これをガイドする案内筒23を保持
している。
22 is a movable plate, and the rod tip of the cylinder 20 is fixed. It also holds the motor 17, the reducer 18, and the shaft of the screw conveyor 6. Further, a guide shaft 21 passes through the guide tube 21, and a guide tube 23 is held therein to guide the guide shaft.

このように構成された精製装置においては、供給口4か
ら結晶を含む結晶スラリーM0が供給される。この供給
された結晶スラリー中の結晶は、主にスクリューコンベ
ア6の回転により下方に強制的に移動される。そめ結果
、スクリューコンベア6の下端より下方に結晶ベッドB
が生成される。
In the refining apparatus configured in this manner, crystal slurry M0 containing crystals is supplied from the supply port 4. The crystals in the supplied crystal slurry are forcibly moved downward mainly by the rotation of the screw conveyor 6. As a result, the crystal bed B is below the lower end of the screw conveyor 6.
is generated.

この結晶ベッドBにおける下部の結晶は、加熱管9の近
傍または表面に接触して溶融する。この溶融時において
、結晶内部の不純物が溶出される。
The lower crystals in this crystal bed B contact the vicinity or surface of the heating tube 9 and melt. During this melting, impurities inside the crystal are eluted.

また、細かい結晶が大きい結晶の周囲に吸着され、再結
晶化が生じるとともに、純度の高い溶融液中で再結晶化
が生じる。このようにして純化が進行する。
In addition, fine crystals are adsorbed around large crystals, causing recrystallization, and recrystallization occurs in a highly pure melt. Purification proceeds in this manner.

結晶の溶融に伴う溶融液は、その一部が製品として取出
口3から系外に取り出される。取り出された溶融液は、
その後の結晶化手段により結晶化されるか、そのまま製
品とされる。
A part of the molten liquid accompanying the melting of the crystals is taken out of the system from the outlet 3 as a product. The molten liquid taken out is
It is crystallized by subsequent crystallization means or used as a product as it is.

また、溶融液の他の一部は、還流液として上昇する。こ
の上昇過程で、降下する結晶と向流接触され、結晶に対
する純化を促進させながら精製塔l上部に達し母液と混
合されながら、使用済母液M2としてスクリーン15を
通って排出口5から排出される。
In addition, another part of the melt rises as a reflux liquid. During this ascending process, it comes into countercurrent contact with the descending crystals, and reaches the upper part of the purification tower 1 while promoting purification of the crystals.While being mixed with the mother liquor, the spent mother liquor passes through the screen 15 and is discharged from the outlet 5. .

ところで、スクリューコンベア6は精製操作の過程中実
質的に連続的に回転されるが、下降および上昇を繰り返
す。たとえば1分間当たり0.1〜数十回、好ましくは
0.2〜7回の頻度で、シリンダー20のロッドを往復
動させることにより昇降を繰り返す。また、上下動のス
トロークSとしては10〜150Mが好ましい。
By the way, the screw conveyor 6 is rotated substantially continuously during the course of the refining operation, but it repeatedly descends and ascends. For example, the rod of the cylinder 20 is moved back and forth at a frequency of 0.1 to several tens of times per minute, preferably 0.2 to 7 times, thereby repeating the raising and lowering. Further, the vertical movement stroke S is preferably 10 to 150M.

スクリューコンベア6が設けられることにより、結晶ベ
ッドBが生成され、この結晶ベッドBが圧密されること
により、結晶ベッドBの下部の結晶は隣接加熱管9.9
間に確実に供給され、その結果、従来のように、隣接加
熱管9.9の頂部を繋ぐブリッジ化およびその下方のデ
ッドスペースDの発生が防止される。また、塔l内にお
ける結晶ベッドB内部における結晶の偏在、ブロック化
および空隙の発生も防止できる。
By providing the screw conveyor 6, a crystal bed B is generated, and by consolidating this crystal bed B, the crystals in the lower part of the crystal bed B are transferred to the adjacent heating tube 9.9.
As a result, the formation of a bridge connecting the tops of adjacent heating tubes 9.9 and the generation of dead space D below the tops of the heating tubes 9.9, as in the conventional case, are prevented. Furthermore, uneven distribution of crystals, blocking, and generation of voids inside the crystal bed B in the column 1 can be prevented.

また、スクリューコンベア6の昇降により、結晶の加熱
溶融部2への供給が、昇降させない場合より、さらに円
滑になる。すなわち、単にスクリューコンベア6を回転
させるのみであると、場合により、結晶ベッドBが過度
に圧密され、硬くなり、結晶の円滑な下部への移行がな
されず、かつ従来と同様に、ブリッジを生じることがあ
る。これに対して、スクリューコンベア6を昇降させる
と、硬くなった結晶ベッドBを壊す作用があり、その結
果、結晶の加熱管9への移行が円滑となる。
Further, by raising and lowering the screw conveyor 6, the supply of crystals to the heating melting section 2 becomes smoother than when the screw conveyor 6 is not raised and lowered. That is, if the screw conveyor 6 is simply rotated, the crystal bed B may become excessively compacted and hardened, and the crystals will not be smoothly transferred to the lower part, and bridging will occur as in the conventional case. Sometimes. On the other hand, raising and lowering the screw conveyor 6 has the effect of breaking the hardened crystal bed B, and as a result, the transition of the crystals to the heating tube 9 becomes smooth.

スクリューコンベア6を上下動させるのは、前述のよう
に、結晶ベッドBの圧密度との相関の下でなされる。た
とえば、第1図のように、スクリューコンベア6の駆動
軸部にトルク検出器25を設け、また検出ターゲット2
6およびこれを検出する位置検出器27を設け、前記ト
ルク検出器25からのトルク信号は結晶ベッドBの圧密
度の指標となるので、トルク信号を位置制御器28に取
り込み、この位置制御器28により、昇降シリンダー2
0に対して、スクリューコンベア6の高さ方向位置、昇
降ストローク長、昇降ストローク頻度などの制御出力を
与えることができる。この場合、スクリューコンベア6
の現位置は、ソニー社製「マグネスケール」なとの位置
検出器により検出される。スクリューコンベア6の昇降
は、シリンダーのほか、スクリューネジ方式により行う
こともできる。
The vertical movement of the screw conveyor 6 is performed in correlation with the degree of consolidation of the crystal bed B, as described above. For example, as shown in FIG. 1, a torque detector 25 is provided on the drive shaft of the screw conveyor 6, and a detection target 2
6 and a position detector 27 for detecting the same are provided, and since the torque signal from the torque detector 25 is an index of the degree of consolidation of the crystal bed B, the torque signal is taken into a position controller 28 and the position controller 28 Accordingly, the lifting cylinder 2
0, control outputs such as the height direction position of the screw conveyor 6, the length of the vertical stroke, and the frequency of the vertical stroke can be given. In this case, the screw conveyor 6
The current position of is detected by a position detector such as "Magnescale" manufactured by Sony. The screw conveyor 6 can be moved up and down using a screw system as well as a cylinder.

また、スクリューコンベア6の位置変えを行う場合、結
晶スラリーの供給量を変えることができる。たとえば、
スクリューコンベア6を上昇させる場合には、結晶スラ
リーの供給量を多く、逆の場合には少なくすることがで
きる。
Furthermore, when changing the position of the screw conveyor 6, the amount of crystal slurry supplied can be changed. for example,
When the screw conveyor 6 is raised, the amount of crystal slurry supplied can be increased, and vice versa.

本発明においては、加熱溶融部として、熱媒体の流通に
よる他、電熱ヒータなどによるものでもよい。しかし、
加熱溶融手段を容器の横断面に沿って平面的に配設した
場合、溶融精製効果が低いので、上記例のように、加熱
管群などからなる加熱溶融部は容器の軸方向に沿って設
けるのが好ましい。また、精製塔1の内壁面に結晶の付
着が懸念される場合、第1図のように、外壁面にスチー
ムなどを通す加熱シース29を設け、付着しようとす゛
る結晶を溶融させることで、付着を防止できる。
In the present invention, the heating and melting part may be formed by an electric heater or the like in addition to the circulation of a heat medium. but,
If the heating melting means is arranged flat along the cross section of the container, the melting and refining effect will be low, so as in the example above, the heating melting section consisting of a group of heating tubes etc. is arranged along the axial direction of the container. is preferable. In addition, if there is a concern that crystals may adhere to the inner wall surface of the purification tower 1, a heating sheath 29 that passes steam or the like is installed on the outer wall surface, as shown in Fig. 1, to melt the crystals that are about to adhere. can be prevented.

なお、本発明においては、供給口4は上端でなく、第2
図のように、中間にあってもよい(ただしスクリューコ
ンベア6の下端より上方)。また、結晶ベッドBの内部
の結晶の偏在化を、より確実に防止するために、また下
降する結晶と還流液とを確実に向流接触させるために、
第2図のように、結晶ベッドB中に攪拌手段、たとえば
ゆっくり回転する攪拌羽根30を設けることができる。
In addition, in the present invention, the supply port 4 is not located at the upper end but at the second
As shown in the figure, it may be located in the middle (but above the lower end of the screw conveyor 6). In addition, in order to more reliably prevent uneven distribution of crystals inside the crystal bed B, and to ensure countercurrent contact between the descending crystals and the reflux liquid,
As shown in FIG. 2, stirring means, for example slowly rotating stirring blades 30, can be provided in the crystal bed B.

この攪拌羽根30の駆動源としては、スクリューコンベ
ア6の駆動源と同一とすることができる。
The drive source for the stirring blades 30 can be the same as the drive source for the screw conveyor 6.

一方、スクリューコンベア6を移動手段とする場合、そ
の軸部を延長させた結晶ベッドBの部分は、スクリュー
コンベア6による圧密力換言すれば移動力が充分作用し
ない。そこで、第3図のように、スクリューコンベア6
の下端に上端が近接する仕切り筒31を設け、この仕切
り筒31と精製塔1内面との環状部の下部に、加熱管9
群を設け、前記環状部において結晶ベッドBの生成およ
び加熱溶融を行わせると、結晶の下降および還流液の上
昇が均一化される。
On the other hand, when the screw conveyor 6 is used as a moving means, the consolidation force of the screw conveyor 6, in other words, the moving force, does not act sufficiently on the portion of the crystal bed B whose shaft portion is extended. Therefore, as shown in Figure 3, the screw conveyor 6
A partition cylinder 31 whose upper end is close to the lower end of the partition cylinder 31 is provided, and a heating pipe 9
If a group is provided and the crystal bed B is generated and heated and melted in the annular portion, the descent of the crystals and the rise of the reflux liquid are made uniform.

スクリューコンベア6の変形例として、第4図のような
間欠羽根を持ったスクリューコンベア6Aも用いること
ができる。本発明における移動手段は、精製塔内に複数
設けられていてもよい。
As a modification of the screw conveyor 6, a screw conveyor 6A having intermittent blades as shown in FIG. 4 can also be used. A plurality of moving means in the present invention may be provided within the purification tower.

本発明は、前述の共晶系有機物例のほか、パラニトロク
ロルベンゼン、スチレンモノマー、固溶体の例としての
ナフタリンとチオナフタリン、あるいはたとえばジュー
スやコヒーなどの冷凍濃縮物なども対象とすることがで
きる。
In addition to the above-mentioned examples of eutectic organic substances, the present invention may also be directed to p-nitrochlorobenzene, styrene monomer, naphthalene and thionaphthalene as examples of solid solutions, or frozen concentrates such as juices and coffee. .

冷凍濃縮物の場合には、氷の比重が軽いので、前記装置
を上下逆にして運転できる。また、本発明装置を横置き
にしても運転できる。
In the case of frozen concentrates, the low density of ice allows the device to be operated upside down. Further, the device of the present invention can be operated even if it is placed horizontally.

本発明の詳細な寸法は、対象物などに応じて適宜決定さ
れるが、一般的に第1図の寸法りとしては20cb されるのが好ましい。本発明装置を複数基設けて、上流
の精製装置で粗精製を行い、下流の精製装置で精密精製
を行うこともできる。
Although the detailed dimensions of the present invention are appropriately determined depending on the object, etc., it is generally preferable that the dimensions shown in FIG. 1 be 20 cb. It is also possible to provide a plurality of apparatuses of the present invention so that the upstream purification apparatus performs rough purification and the downstream purification apparatus performs precise purification.

他方、加熱溶融部と塔lの上方との温度差は、対象とす
る結晶系に応じて適宜選定することができるが、30℃
以下、特に15℃以下が好ましい。
On the other hand, the temperature difference between the heated melting zone and the upper part of the column 1 can be selected as appropriate depending on the target crystal system, but is 30°C.
Below, the temperature is particularly preferably 15°C or lower.

〔実施例〕〔Example〕

以下本発明の効果を実施例を示しながら明らかにする。 The effects of the present invention will be explained below with reference to Examples.

(実施例1) 高さ1500mm、円筒径250mmの精製塔を用意し
、その下部に、高さ400mm、外径25mmの加熱管
を設け、加熱管群の伝熱面積0.45c/とじて加熱溶
融部を構成した。また、羽根がほぼ塔内面に近接するス
クリューコンベアを配設するとともに、結晶ベッドに対
する圧密度が一定となるように、スクリューコンベアの
回転数を調節し、かつストローク10mmで頻度20回
/分で上下の移動させ、結晶ベッドのレベルが一定とな
るように結晶スラリーを供給した。
(Example 1) A purification tower with a height of 1,500 mm and a cylindrical diameter of 250 mm was prepared, and a heating tube with a height of 400 mm and an outer diameter of 25 mm was installed at the bottom of the tower, and the heat transfer area of the heating tube group was 0.45 c/h and heated. A melting section was formed. In addition, we installed a screw conveyor whose blades are almost close to the inner surface of the tower, and adjusted the rotation speed of the screw conveyor so that the degree of consolidation of the crystal bed was constant, and moved it up and down at a frequency of 20 times/min with a stroke of 10 mm. The crystal slurry was supplied so that the level of the crystal bed remained constant.

この母液として、p−キシレン85%、0−キシレン1
5%の組成のp−キシレン結晶を含有するものを供給し
、加熱溶融部の温度を13℃、上部温度を7℃となし、
還流比を0.2となるように操作した。
As this mother liquor, p-xylene 85%, 0-xylene 1
A material containing p-xylene crystals having a composition of 5% is supplied, the temperature of the heating melting part is 13 ° C., the upper temperature is 7 ° C.,
The reflux ratio was operated to be 0.2.

その結果、純度99.90%のp−キシレンを、160
kg/hrの速度で得ることができた。
As a result, p-xylene with a purity of 99.90% was produced at 160%
kg/hr.

(比較例I) 実施例1において、スクリューコンベアの上下動を行わ
ない以外は同一の条件下で操作した。
(Comparative Example I) In Example 1, the operation was performed under the same conditions except that the screw conveyor was not moved up and down.

その結果、純度は同一であったが、生産量としては、2
3kg/hrときわめて低いものであった。
As a result, the purity was the same, but the production amount was 2.
It was extremely low at 3 kg/hr.

(実施例2) 装置は同一であるが、母液として、p−ジクロルベンゼ
ン70%、0−ジクロルベンゼン30%の組成のp−ジ
クロルベンゼン結晶を含有するものを用い、かつ還流比
を0.3として以外は、実施例tと同様に操作した。
(Example 2) The apparatus was the same, but a mother liquor containing p-dichlorobenzene crystals with a composition of 70% p-dichlorobenzene and 30% 0-dichlorobenzene was used, and the reflux ratio was It was operated in the same manner as in Example t, except that the temperature was changed to 0.3.

その結果、純度99.92%のp−ジクロルベンゼンを
245kg/hrの生産量をもって得ることができた。
As a result, p-dichlorobenzene with a purity of 99.92% could be obtained at a production rate of 245 kg/hr.

(比較例2) 加熱溶融部に熱媒体の供給量を減少させ、還流を行わな
い以外は、実施例2と同一の条件で運転した。
(Comparative Example 2) Operation was carried out under the same conditions as in Example 2, except that the amount of heat medium supplied to the heating and melting zone was reduced and reflux was not performed.

その結果、純度は97.0%に低下した。As a result, the purity decreased to 97.0%.

(比較例3) スクリューコンベアを運転しない以外は実施例2と同一
条件で運転した。
(Comparative Example 3) Operation was carried out under the same conditions as in Example 2 except that the screw conveyor was not operated.

その結果、純度はほぼ同一であったが、生産量は3.5
kg/ h rに大幅に低下した。
As a result, the purity was almost the same, but the production amount was 3.5
kg/hr.

(実施例3) ナフタリン90%、チオナフタリン20%の組成のナフ
タリンを含有する結晶スラリーを供給するとともに、還
流比を0.2として、実施例1と同様の操作を行った。
(Example 3) The same operation as in Example 1 was carried out by supplying a crystal slurry containing naphthalene having a composition of 90% naphthalene and 20% thionaphthalene, and setting the reflux ratio to 0.2.

その結果、純度99%のナフタリンを95kg/hrの
生産量で得ることができた。なお、溶融部の温度として
は、79.5℃とした。
As a result, naphthalene with a purity of 99% could be obtained at a production rate of 95 kg/hr. Note that the temperature of the melting zone was 79.5°C.

(実施例4) 実施例1の装置を天地逆にし、食塩15%、水85%の
組成の氷結晶を含有する結晶スラリーを供給し、還流比
を0.2として、実施例1と同様の操作を行った。
(Example 4) The apparatus of Example 1 was turned upside down, a crystal slurry containing ice crystals with a composition of 15% salt and 85% water was supplied, and the reflux ratio was set to 0.2, and the same procedure as in Example 1 was carried out. performed the operation.

その結果、純度99.9%の水を500kg/hrの生
産量をもって得ることができた。この場合、上部溶融部
の温度として0℃とした。
As a result, water with a purity of 99.9% could be obtained at a production rate of 500 kg/hr. In this case, the temperature of the upper melting zone was 0°C.

〔発明の効果〕〔Effect of the invention〕

以上のとおり、本発明によれば、精製に当たっての生産
性が著しく高まるとともに、メンテナンス性に優れ、さ
らに精製効果が高いものとなる。
As described above, according to the present invention, the productivity in purification is significantly increased, the maintainability is excellent, and the purification effect is high.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第3図はそれぞれ本発明装置の第1〜第3実施
例の概要縦断面図、第4図はスクリューコンベアの変形
例の要部正面図、第5図は従来例を本発明装置との関連
で示した縦断面図である。 l・・・精製塔、2・・・加熱溶融部、3・・・取出口
、4・・・供給口、5・・・排出口、6.6A・・・ス
クリューコンベア、9・・・加熱管、13.15・・・
スクリーン、17・・・モータ、20・・・シリンダー
、M。・・・結晶スラリー、Ml・・・溶融液、M、・
・・使用済母液、H,・・・熱媒体。 第 4 図 第 図
1 to 3 are schematic vertical sectional views of the first to third embodiments of the apparatus of the present invention, FIG. 4 is a front view of main parts of a modified example of the screw conveyor, and FIG. 5 is a conventional example of the present invention. FIG. 3 is a longitudinal cross-sectional view shown in relation to the device. 1... Purification tower, 2... Heating melting section, 3... Output port, 4... Supply port, 5... Discharge port, 6.6A... Screw conveyor, 9... Heating Tube, 13.15...
Screen, 17...Motor, 20...Cylinder, M. ...crystal slurry, Ml...melt liquid, M,...
... Spent mother liquor, H, ... Heat medium. Figure 4

Claims (8)

【特許請求の範囲】[Claims] (1)容器内の一端部に結晶の加熱溶融部とこの加熱溶
融部により溶融された溶融液の取出口とを有し、他端部
側に結晶スラリーの供給口と精製に供した還流液と母液
の排出口と、容器内部において結晶を前記他端部側から
一端部側に強制的に移動させる移動手段とを備え、前記
結晶スラリーの供給口および還流液と母液の排出口は前
記移動手段より他端部側に形成された精製装置を用い、
前記供給口から供給した結晶スラリー中の結晶を前記移
動手段により強制的に移動させながら一端部の加熱溶融
部に導き、この加熱溶融部表面またはその近傍において
結晶の溶融を行うとともに、溶融液の一部を製品として
取出口から取り出す一方で、溶融液の一部を還流液とし
て一端部から他端部に向かって移動させ、この移動過程
において一端部に向かって移動する結晶と向流的に接触
させ、結晶と母液を前記排出口から取り出すことを特徴
とする共晶系有機物の結晶精製方法。
(1) One end of the container has a heating melting section for crystals and an outlet for the melt melted by the heating melting section, and the other end has a supply port for crystal slurry and a reflux liquid used for purification. a discharge port for the mother liquor, and a moving means for forcibly moving the crystals from the other end side to the one end side within the container, and the supply port for the crystal slurry and the discharge port for the reflux liquid and the mother liquor are provided for the movement means. Using a refining device formed on the other end side of the means,
The crystals in the crystal slurry supplied from the supply port are forcibly moved by the moving means and guided to the heating melting section at one end, and the crystals are melted on or near the surface of the heating melting section, and the molten liquid is While a part of the melt is taken out as a product from the outlet, a part of the melt is moved as a reflux liquid from one end to the other, and in this movement process, it is countercurrently moved with the crystals moving towards one end. A method for purifying crystals of a eutectic organic substance, which comprises bringing the crystals into contact with the mother liquor and taking out the crystals and the mother liquor from the outlet.
(2)前記移動手段は、容器の軸方向に沿って配設され
たスクリューコンベアからなり、かつこのスクリューコ
ンベアのスクリュー部が精製操作中において軸方向の移
動を繰り返す請求項1記載の方法。
(2) The method according to claim 1, wherein the moving means comprises a screw conveyor arranged along the axial direction of the container, and the screw portion of the screw conveyor repeatedly moves in the axial direction during the refining operation.
(3)前記移動手段は精製操作中において、移動手段の
先端より一端部側に生成される結晶のベッドの圧密度に
応じて移動手段の容器軸方向位置を調整し、この移動手
段の位置に応じて結晶スラリーの供給量を調整する請求
項1記載方法。
(3) During the refining operation, the moving means adjusts the position of the moving means in the axial direction of the container according to the degree of consolidation of the crystal bed generated on the one end side from the tip of the moving means, and adjusts the position of the moving means in the container axial direction. 2. The method according to claim 1, wherein the amount of crystal slurry supplied is adjusted accordingly.
(4)容器内の一端部に結晶の加熱溶融部とこの加熱溶
融部により溶融された溶融液の取出口とを有し、他端部
側に結晶スラリーの供給口と精製に供した還流液と母液
の排出口と、容器内部において結晶を前記他端部側から
一端部側に強制的に移動させる移動手段とを備え、前記
結晶スラリーの供給口および還流液と母液の排出口は前
記移動手段より他端部側に形成されたことを特徴とする
結晶精製装置。
(4) One end of the container has a crystal heating melting section and an outlet for the melt melted by the heating melting section, and the other end has a crystal slurry supply port and a reflux liquid used for purification. a discharge port for the mother liquor, and a moving means for forcibly moving the crystals from the other end side to the one end side within the container, and the supply port for the crystal slurry and the discharge port for the reflux liquid and the mother liquor are provided for the movement means. A crystal refining device characterized in that the device is formed closer to the other end than the means.
(5)移動手段は容器の軸方向に配設されたスクリュー
コンベアからなり、さらにこのスクリューコンベアに対
してその軸方向に移動させるシリンダが付設されている
請求項4記載の精製装置。
(5) The refining device according to claim 4, wherein the moving means comprises a screw conveyor arranged in the axial direction of the container, and further includes a cylinder for moving the screw conveyor in the axial direction.
(6)移動手段は容器の軸方向に前記他端部側に配設さ
れたスクリューコンベアからなり、そのスクリューコン
ベアのほぼ軸径と同一径の仕切り筒がスクリューコンベ
アの先端近くまで前記一端部から設けられ、この仕切り
筒と容器内面との環状部の前記一端部側に前記加熱溶融
部が設けられている請求項4記載の精製装置。
(6) The moving means consists of a screw conveyor disposed on the other end side in the axial direction of the container, and a partition cylinder having approximately the same diameter as the shaft diameter of the screw conveyor extends from the one end to near the tip of the screw conveyor. 5. The refining device according to claim 4, wherein the heating melting section is provided on the one end side of the annular portion between the partition tube and the inner surface of the container.
(7)加熱溶融部は、容器の軸方向に配設された加熱管
群からなる請求項4記載の精製装置。
(7) The purification apparatus according to claim 4, wherein the heating and melting section comprises a group of heating tubes arranged in the axial direction of the container.
(8)移動手段と加熱溶融部との間の結晶ベッドの生成
域内部に攪拌手段が設けられている請求項4記載の装置
(8) The apparatus according to claim 4, wherein stirring means is provided inside the crystal bed generation region between the moving means and the heating melting section.
JP1219042A 1989-08-25 1989-08-25 Crystal refining method and apparatus thereof Expired - Fee Related JP2528364B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1219042A JP2528364B2 (en) 1989-08-25 1989-08-25 Crystal refining method and apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1219042A JP2528364B2 (en) 1989-08-25 1989-08-25 Crystal refining method and apparatus thereof

Publications (2)

Publication Number Publication Date
JPH0380901A true JPH0380901A (en) 1991-04-05
JP2528364B2 JP2528364B2 (en) 1996-08-28

Family

ID=16729349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1219042A Expired - Fee Related JP2528364B2 (en) 1989-08-25 1989-08-25 Crystal refining method and apparatus thereof

Country Status (1)

Country Link
JP (1) JP2528364B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152702A (en) * 1981-04-13 1981-11-26 Nippon Steel Chem Co Ltd Purification method of crystalline component
JPS56155602A (en) * 1980-02-13 1981-12-01 Tno Column for crystallization and method of crystallization in said column

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155602A (en) * 1980-02-13 1981-12-01 Tno Column for crystallization and method of crystallization in said column
JPS56152702A (en) * 1981-04-13 1981-11-26 Nippon Steel Chem Co Ltd Purification method of crystalline component

Also Published As

Publication number Publication date
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