JPH0385651U - - Google Patents
Info
- Publication number
- JPH0385651U JPH0385651U JP14803689U JP14803689U JPH0385651U JP H0385651 U JPH0385651 U JP H0385651U JP 14803689 U JP14803689 U JP 14803689U JP 14803689 U JP14803689 U JP 14803689U JP H0385651 U JPH0385651 U JP H0385651U
- Authority
- JP
- Japan
- Prior art keywords
- width
- semiconductor
- semiconductor device
- resin
- figures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
第１および６図はそれぞれ本考案の実施例によ
るパツケージ構造例を示す斜視図、第２図、第３
図はそれぞれ第１図の実施例を１チヤンネル、２
チヤンネルに切断された後の製品形状を示す斜視
図、第７図が、従来のマルチタイプのパツケージ
構造を示す斜視図、第８図、第９図がその１チヤ
ンネル、２チヤンネルの製品形状の斜視図、第４
図はレーザ光による切断のモデルを示す図、第５
図は金型ポンチによる切断のモデルを示す図、第
１０図は従来のダイヤモンドブレードによる切断
のモデルを示す図である。
１……モールド体、２……リード、３……スリ
ツト、４……レーザ照射ノズル、５……レーザ発
振装置、６……金型ポンチ、７……ダイ、８……
ダイヤモンドブレード、９……ワーク受けステー
ジ、１０……水。
Figures 1 and 6 are perspective views showing examples of package structures according to embodiments of the present invention, Figures 2 and 3, respectively.
The figures show the embodiment of Fig. 1 for 1 channel and 2 channels, respectively.
Figure 7 is a perspective view showing the product shape after being cut into channels; Figure 7 is a perspective view showing a conventional multi-type package structure; Figures 8 and 9 are perspective views of the product shape of the 1st channel and 2nd channel. Figure, 4th
Figure 5 shows a model of cutting by laser light.
The figure shows a model of cutting with a mold punch, and FIG. 10 shows a model of cutting with a conventional diamond blade. DESCRIPTION OF SYMBOLS 1... Mold body, 2... Lead, 3... Slit, 4... Laser irradiation nozzle, 5... Laser oscillation device, 6... Mold punch, 7... Die, 8...
Diamond blade, 9...work receiving stage, 10...water.
Claims (1)
個配列され、一体的に樹脂封止された半導体装置
において、各半導体素子間の境界部分の樹脂表面
に素子配列方向と垂直に深さが封止樹脂の厚さの
1/2以上で巾が０．０５〜１．０mmの成形溝を有
することを特徴とする半導体装置。 In a semiconductor device in which a plurality of semiconductor elements having the same function are arranged in an array and are integrally sealed with resin, the resin surface at the boundary between each semiconductor element has a depth perpendicular to the element arrangement direction. of thickness
1. A semiconductor device having a molding groove having a width of 1/2 or more and a width of 0.05 to 1.0 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14803689U JPH0385651U (en) | 1989-12-21 | 1989-12-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14803689U JPH0385651U (en) | 1989-12-21 | 1989-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0385651U true JPH0385651U (en) | 1991-08-29 |
Family
ID=31694504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14803689U Pending JPH0385651U (en) | 1989-12-21 | 1989-12-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0385651U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289757A (en) * | 2001-03-27 | 2002-10-04 | New Japan Radio Co Ltd | Electronic component lead cutting method |
| JP2009539292A (en) * | 2006-06-02 | 2009-11-12 | ぺリション、クロード、アニー | Management of active electrons |
| JP2011049482A (en) * | 2009-08-28 | 2011-03-10 | Mitsubishi Electric Corp | Semiconductor device |
-
1989
- 1989-12-21 JP JP14803689U patent/JPH0385651U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289757A (en) * | 2001-03-27 | 2002-10-04 | New Japan Radio Co Ltd | Electronic component lead cutting method |
| JP2009539292A (en) * | 2006-06-02 | 2009-11-12 | ぺリション、クロード、アニー | Management of active electrons |
| JP2011049482A (en) * | 2009-08-28 | 2011-03-10 | Mitsubishi Electric Corp | Semiconductor device |