JPH0390433U - - Google Patents
Info
- Publication number
- JPH0390433U JPH0390433U JP15202089U JP15202089U JPH0390433U JP H0390433 U JPH0390433 U JP H0390433U JP 15202089 U JP15202089 U JP 15202089U JP 15202089 U JP15202089 U JP 15202089U JP H0390433 U JPH0390433 U JP H0390433U
- Authority
- JP
- Japan
- Prior art keywords
- heating section
- tank
- substrate
- semiconductor manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の半導体製造装置の一実施例に
係る構成を示す断面図、第２図は従来例の半導体
製造装置を示す断面図である。
１２……メトル槽、１３……発熱部、１２ａ，
１２ｂ……スペーサー、１３ａ……接触加熱部、
１４……基体、１４ａ，１４ｂ……カーボンボー
ド、１５……電熱ヒータ、１６……基板、１８…
…溶液。
FIG. 1 is a cross-sectional view showing the structure of an embodiment of the semiconductor manufacturing apparatus of the present invention, and FIG. 2 is a cross-sectional view showing a conventional semiconductor manufacturing apparatus. 12...Mettle tank, 13...Heating part, 12a,
12b...Spacer, 13a...Contact heating part,
14... Base body, 14a, 14b... Carbon board, 15... Electric heater, 16... Substrate, 18...
…solution.
Claims (1)
反応管のメトル槽と、 このメトル槽の開口部から延在して発熱し、前
記液相の半導体と接触する部位を備える加熱部と
、 を備えることを特徴とする半導体製造装置。[Claims for Utility Model Registration] A methol tank of a reaction tube in which a liquid-phase semiconductor is disposed on at least a substrate; A semiconductor manufacturing device comprising: a heating section having a heating section;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15202089U JPH0390433U (en) | 1989-12-28 | 1989-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15202089U JPH0390433U (en) | 1989-12-28 | 1989-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0390433U true JPH0390433U (en) | 1991-09-13 |
Family
ID=31698300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15202089U Pending JPH0390433U (en) | 1989-12-28 | 1989-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0390433U (en) |
-
1989
- 1989-12-28 JP JP15202089U patent/JPH0390433U/ja active Pending