JPH0391279A - Integrated optical semiconductor element - Google Patents
Integrated optical semiconductor elementInfo
- Publication number
- JPH0391279A JPH0391279A JP22677189A JP22677189A JPH0391279A JP H0391279 A JPH0391279 A JP H0391279A JP 22677189 A JP22677189 A JP 22677189A JP 22677189 A JP22677189 A JP 22677189A JP H0391279 A JPH0391279 A JP H0391279A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- emitting element
- light
- phase modulator
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000000926 separation method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000010354 integration Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は単一モードで発振する発光素子と位相変調器を
同一基板上に集積した集積化光半導体素子に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an integrated optical semiconductor device in which a light emitting device that oscillates in a single mode and a phase modulator are integrated on the same substrate.
（従来の技術）
コヒーレント光通信方式では直接検波系のシステムと比
べて受信感度が改善できるので、より長距離の光伝送が
可能となる。そのための光源として、単一モードで発振
する光源と位相変調器を同一基板上に集積化した集積化
光半導体素子は、光源と変調器のアライメントが不用な
ため、高い安定性を有し、また結合損失が小さい等の優
れた特性を持ち合わせており有用なデバイスとして期待
される。(Prior Art) Coherent optical communication systems can improve reception sensitivity compared to direct detection systems, allowing longer distance optical transmission. As a light source for this purpose, an integrated optical semiconductor device that integrates a light source that oscillates in a single mode and a phase modulator on the same substrate has high stability because it does not require alignment of the light source and modulator. It has excellent properties such as low coupling loss, and is expected to be a useful device.
従来、上述の集積化光半導体素子に関しては第２図に示
したように発光素子と位相変調器を集積し電極を２電極
構造としたものが提案されていた。これは、発光素子部
に流す電流は一定として、位相変調器に流す電流を変化
させ、位相変調部の実効的な屈折率を変化させることに
より位相変調を行うものである。Conventionally, as for the above-mentioned integrated optical semiconductor device, one has been proposed in which a light emitting device and a phase modulator are integrated and the electrodes have a two-electrode structure, as shown in FIG. In this method, phase modulation is performed by keeping the current flowing through the light emitting element portion constant and changing the current flowing through the phase modulator to change the effective refractive index of the phase modulation portion.
（発明が解決しようとする課題）
第２図に示す従来例において、電極分離領域１０は回折
格子の端と一致する位置となっている。この場合には、
第３図（ａ）に示したように位相変調器部に流した電流
が発光素子部に流れ込むことが懸念される。これにより
位相変調時において、部分的な屈折率変動が原因となっ
て生じる波長変動、さらにはスペクトル線幅の増大も起
こしかねない状態となる。光ファイバを伝送線路として
用いてＰＳＫコヒーレント伝送を行なう場合、位相変調
時における波長変動によって、伝送特性の劣化が予想さ
れることから位相変調器部への変調電流による波長変動
は最低限に抑える必要がある。(Problems to be Solved by the Invention) In the conventional example shown in FIG. 2, the electrode separation region 10 is located at a position that coincides with the edge of the diffraction grating. In this case,
There is a concern that the current flowing through the phase modulator section may flow into the light emitting element section as shown in FIG. 3(a). This creates a situation where, during phase modulation, wavelength fluctuations caused by partial refractive index fluctuations and even an increase in spectral linewidth may occur. When performing PSK coherent transmission using an optical fiber as a transmission line, it is expected that the transmission characteristics will deteriorate due to wavelength fluctuations during phase modulation, so it is necessary to minimize wavelength fluctuations due to modulation current to the phase modulator section. There is.
本発明の目的は簡単なプロセス上の工夫により、上記漏
れ電流を少なくし、位相変調時における、波長変動を大
幅に低減して集積化光素子を提供することにある。An object of the present invention is to provide an integrated optical device in which the above-mentioned leakage current is reduced and wavelength fluctuations during phase modulation are significantly reduced through simple process improvements.
（課題を解決するための手段）
本発明では、同一基板上に発光素子と位相変調器を集積
した集積化光半導体素子において、前記発光素子が少な
くとも活性層及び回折格子を有し、発光素子電極と位相
素子電極を分離する分離領域が、発光素子部における回
折格子の端よりも位相変調器部側にあることを特徴とす
る集積化光半導体素子によって上述の課題を解決する。(Means for Solving the Problems) In the present invention, in an integrated optical semiconductor device in which a light emitting device and a phase modulator are integrated on the same substrate, the light emitting device has at least an active layer and a diffraction grating, and the light emitting device electrode The above-mentioned problem is solved by an integrated optical semiconductor device characterized in that a separation region separating the phase element electrode and the phase element electrode is located closer to the phase modulator section than the end of the diffraction grating in the light emitting element section.
（作用）
先述の課題を解決する手段として、高抵抗層等を発光素
子部と位相変調器部との間に設けることが考えられるが
、結晶成長の回数が増し、作製プロセスが複雑となるこ
とから好ましくない。さらに、高抵抗層を導入しても光
の結合部付近でのわずかな電流の流れ込みは避は難い。(Function) As a means to solve the above-mentioned problem, it is possible to provide a high resistance layer or the like between the light emitting element section and the phase modulator section, but this increases the number of times of crystal growth and complicates the manufacturing process. undesirable. Furthermore, even if a high-resistance layer is introduced, it is difficult to avoid a slight flow of current near the light coupling portion.
そこで本発明では、発光素子の電極と位相変調器の電極
を分離する領域を、発光素子部における回折格子の端よ
りも位相変調器部側に設ける。こうすることにより、多
少の電流の流れ込みがあってもＤＦＢ−ＬＤ、ＤＢＲ−
ＬＤ光源の発振波長が影響されず、したがって、位相変
調時においても、波長変動の極めて少ない発光素子と位
相変調器を集積した集積化光素子を得ることができる。Therefore, in the present invention, a region separating the electrode of the light emitting element and the electrode of the phase modulator is provided closer to the phase modulator part than the end of the diffraction grating in the light emitting element part. By doing this, even if there is some current flow, DFB-LD and DBR-
The oscillation wavelength of the LD light source is not affected, and therefore, even during phase modulation, it is possible to obtain an integrated optical device in which a light emitting element and a phase modulator are integrated, and the wavelength fluctuation is extremely small.
第１図は本発明に相当し、発光素子部の電極７と位相変
調器部の電極８を分離する分離領域１０が、発光素子領
域における回折格子の端よりも位相変調器側にある。こ
のような構造とすることにより定常状態において第３図
（ｂ）に示すように、電極８から流れる電流が発光素子
部に流れ込まなくなる。FIG. 1 corresponds to the present invention, in which a separation region 10 separating the electrode 7 of the light emitting element section and the electrode 8 of the phase modulator section is located closer to the phase modulator than the end of the diffraction grating in the light emitting element region. With this structure, as shown in FIG. 3(b) in a steady state, the current flowing from the electrode 8 does not flow into the light emitting element portion.
従って位相変調時においても波長変動の極めて少ない集
積化光半導体素子を得ることができる。Therefore, it is possible to obtain an integrated optical semiconductor device with extremely little wavelength fluctuation even during phase modulation.
（実施例） 図面を参照して本発明の実施例をより詳細に説明する。(Example) Embodiments of the present invention will be described in more detail with reference to the drawings.
断面構造を第１図に示す。The cross-sectional structure is shown in Figure 1.
この実施例の作製においては、部分的に回折格子を形成
したｎ−ＩｎＰ基板１上に、１．３ｐｍ組戒のＩｎＧａ
ＡｓＰ光ガイド層２を厚さ０．１５１１ｍ、 ＩｎＰス
ペーサ層３を０．１５１１ｍ、１．５ｐｍ組成のＩｎＧ
ａＡｓＰ活性層４を０．１ｐｍ、 ＩｎＰクラッド層５
を１．０ｐｍとして順次積層した。このようにして作製
したウェハーをＤＣ−ＰＢＨ埋め込み構造としたのち電
極を蒸着し、Ｐ側電極の′分離を行った。ここで、電極
８と電極７を分離する溝の位置は回折格子の端よりも約
３０ｐｍ位相変調器部側とし、さらに上記溝の深さは０
．２ｐｍとした。そして最後に光出力端面側に５ｉ０２
のＡＲココ−イグを施した。In the fabrication of this example, InGa of 1.3 pm was deposited on an n-InP substrate 1 on which a diffraction grating was partially formed.
The AsP light guide layer 2 has a thickness of 0.1511 m, the InP spacer layer 3 has a thickness of 0.1511 m, and an InG composition of 1.5 pm.
aAsP active layer 4 with a thickness of 0.1 pm, InP cladding layer 5
The thickness was set to 1.0 pm, and the layers were sequentially laminated. After the wafer thus produced was made into a DC-PBH buried structure, electrodes were deposited and the P-side electrode was separated. Here, the position of the groove separating electrode 8 and electrode 7 is approximately 30 pm closer to the phase modulator section than the end of the diffraction grating, and the depth of the groove is 0.
．． It was set to 2pm. And finally, 5i02 on the light output end face side.
AR Cocoig was applied.
このようにして作製した集積化光素子は位相変調器部の
バイアス電流を１０ｍＡとした場合、発光素子部のしき
い値電流１５ｍＡ、最高光出力４０ｍＷ、微分量子効率
片面あたす２０％程度の素子が得られる。The integrated optical device fabricated in this way has a threshold current of 15 mA in the light emitting element section, a maximum optical output of 40 mW, and a differential quantum efficiency of about 20% on one side when the bias current of the phase modulator section is 10 mA. An element is obtained.
さらに、発光素子部に注入する電流を４０ｍＡ一定とし
て、位相変調器部に位相変化量Ｈになるだけの変調をか
けた場合、波長変動が従来の１．５Ａに比べ、０、ＩＡ
と大幅な改善が図れる。Furthermore, when the current injected into the light emitting element section is kept constant at 40 mA, and the phase modulator section is modulated to a phase change amount of H, the wavelength fluctuation is 0, IA, compared to the conventional 1.5 A.
A significant improvement can be made.
なお実施例においてはＩｎＰ系の半導体材料を用いたが
、本発明では用いる材料系はこれに限るものではなく、
ＧａＡｓ系等、他の材料系を用いても何ら差し支えない
。また、今回は活性層として、通常のバルクのものに関
して説明を行ったが、活性層を量子井戸、量子細線、量
子箱構造としても何ら差し支えない。もちろん実施例に
示したＤＦＢ構造のみならずＤＢＲ構造にも有効である
。Although an InP-based semiconductor material was used in the examples, the material system used in the present invention is not limited to this.
There is no problem in using other materials such as GaAs. In addition, although this time we have explained the active layer in a normal bulk structure, there is no problem in using the active layer as a quantum well, a quantum wire, or a quantum box structure. Of course, this is effective not only for the DFB structure shown in the embodiment but also for the DBR structure.
（発明の効果）
以上のように本発明では発光素子と位相変調器を集積し
た集積化光半導体素子において、発光素子部の電極が回
折格子のある分布帰還領域よりも広い範囲にわたり形成
されることにより、位相変調時においても波長変動の無
い、特性の優れた集積化光素子を提供することが可能と
なると考えられる。(Effects of the Invention) As described above, in the present invention, in an integrated optical semiconductor device in which a light emitting element and a phase modulator are integrated, the electrode of the light emitting element portion is formed over a wider area than the distributed feedback region where the diffraction grating is located. It is believed that this makes it possible to provide an integrated optical element with excellent characteristics and no wavelength fluctuation even during phase modulation.
第１図は本発明の一実施例の断面構造図、第２図は従来
例による断面構造図、第３図（ａ）は従来例における電
流経路を示す図で、同図（ｂ）は本発明における電流経
路を示した図である。
図中、１は基板、２は光ガイド層、３はスペーサ層、４
は活性層、５はクラッド層、６はキャップ層、７は電極
１．８は電極２．９は電極３．１０は電極分離領域、１
１は５ｉ０２をそれぞれ表す。FIG. 1 is a cross-sectional structural diagram of an embodiment of the present invention, FIG. 2 is a cross-sectional structural diagram of a conventional example, FIG. 3(a) is a diagram showing the current path in the conventional example, and FIG. FIG. 3 is a diagram showing a current path in the invention. In the figure, 1 is a substrate, 2 is a light guide layer, 3 is a spacer layer, 4
is an active layer, 5 is a cladding layer, 6 is a cap layer, 7 is an electrode 1.8 is an electrode 2.9 is an electrode 3.10 is an electrode separation region, 1
1 represents 5i02, respectively.
Claims (1)
半導体素子において、前記発光素子が少なくとも活性層
及び回折格子を有し、発光素子電極と位相変調器電極を
分離する分離領域が、発光素子領域における回折格子の
端よりも位相変調器側にあることを特徴とする集積化光
半導体素子。In an integrated optical semiconductor device in which a light emitting element and a phase modulator are integrated on the same substrate, the light emitting element has at least an active layer and a diffraction grating, and a separation region separating the light emitting element electrode and the phase modulator electrode is configured to emit light. An integrated optical semiconductor device characterized in that the device region is located closer to the phase modulator than the end of the diffraction grating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22677189A JP2920950B2 (en) | 1989-09-01 | 1989-09-01 | Integrated optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22677189A JP2920950B2 (en) | 1989-09-01 | 1989-09-01 | Integrated optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0391279A true JPH0391279A (en) | 1991-04-16 |
| JP2920950B2 JP2920950B2 (en) | 1999-07-19 |
Family
ID=16850357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22677189A Expired - Lifetime JP2920950B2 (en) | 1989-09-01 | 1989-09-01 | Integrated optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2920950B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03148889A (en) * | 1989-11-06 | 1991-06-25 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
-
1989
- 1989-09-01 JP JP22677189A patent/JP2920950B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03148889A (en) * | 1989-11-06 | 1991-06-25 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2920950B2 (en) | 1999-07-19 |
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