JPH04101483A - 垂直共振器型面入出力光電融合素子 - Google Patents

垂直共振器型面入出力光電融合素子

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Publication number
JPH04101483A
JPH04101483A JP2218833A JP21883390A JPH04101483A JP H04101483 A JPH04101483 A JP H04101483A JP 2218833 A JP2218833 A JP 2218833A JP 21883390 A JP21883390 A JP 21883390A JP H04101483 A JPH04101483 A JP H04101483A
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Japan
Prior art keywords
layer
type surface
surface input
quantum well
resonator type
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JP2218833A
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JP2596195B2 (ja
Inventor
Hideo Kosaka
小坂　英男
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NEC Corp
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NEC Corp
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Priority to JP21883390A priority Critical patent/JP2596195B2/ja
Priority to CA002049448A priority patent/CA2049448C/en
Priority to DE69120614T priority patent/DE69120614T2/de
Priority to EP91113897A priority patent/EP0474018B1/en
Priority to US07/747,561 priority patent/US5229627A/en
Publication of JPH04101483A publication Critical patent/JPH04101483A/ja
Application granted granted Critical
Publication of JP2596195B2 publication Critical patent/JP2596195B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は高並列な光伝送や光情報処理に用いられる垂直
共振器型面入出力光電融合素子（ＶＣ−ＶＳＴＥＰ）に
関する。
（従来の技術） 半導体基板に垂直方向に入出力する画人出力素子はコン
ピュータ間のデータ伝送や、光コンピユーテイングに欠
かせないキーデバイスとなる。画人出力素子としては第
３図に示した従来の画人出力光電融合素子（ＬＥＤ−Ｖ
ＳＴＥＰ）があるが、これは垂直方向には自然放出モー
ドの発光である。また、第４図に示した誘導放出モード
ＶＳＴＥＰ（ＬＤ−ＶＳＴＥＰ）も開発されているが、
これは基板に水平方向に共振器があり、端面に４５°ミ
ラーを形成することによって基板に垂直方向へ発光させ
るようにしたものである（アプライド・フィツクス・レ
ターズ（Ａｐｐｌ、　Ｐｈｙｓ、　Ｌｅｔｔ、）の５４
巻、２３号、１９８９年の３２９〜３３１頁に記載）。
ここでいう垂直共振器ＶＳＴＥＰは基板に垂直方向に共
振器を形成したＶＳＥＴＰをいう。
（発明が解決しようとする課題） 従来のＬＥＤ−ＶＳＴＥＰは自然放出モードでの発光の
ため、■電気−光変換効率や０周波数応答性、■出射光
ビームの指向性などの点で応用上問題がある。また、Ｌ
Ｄ−ＶＳＴＥＰについても、■基板に水平方向の共振器
のために素子が小型化できない、■吸収層・活性層分離
型のため同一波長での光吸収効率が低く、縦続接続を考
えた場合には光感度が低下する点で好ましくないという
問題があった本発明の目的は、４５°なしで基板に垂直
方向に誘導放出モードで発光し、しかも上記のような問
題点を解決した垂直共振器型面入出力光電融合素子、Ｖ
ＳＴＥＰを提供することにある。
（課題を解決するだめの手段） 本発明の垂直共振器型面入出力光電融合素子はｐｎｐｎ
構造と、そのｐｎ、ｐｎ構造の中に光吸収層兼活性層と
して動作する量子井戸層とを有し、該量子の上下にガイ
ド層を備え、このカイト層の上下に多層膜反射鏡を備え
、前記量子井戸層とガイド層からなる中間層の層厚が媒
質内発振波長の整数倍であることを特徴とする。
（作用） 中央部の量子井戸層は、オフ時には吸収層として、オン
時には活性層として働く。この構造の特徴は、垂直共振
器構造による吸収増大効果と、吸収波長域と発振波長の
一致が期待できる点にある。
第２図は多層膜の反射鏡と中間層での光強度分布と屈折
率分布を示す図である。すなわち、上下多層膜反射鏡の
層数を最適化することによって、第２図に示すように中
間層での光強度の増大が起こり、吸収層（＝活性層）厚
が１００人と非常に薄いにも関わらず吸収率９９．９２
％を得ることができる。また、通常レーザの発振波長は
活性層の吸収領域よりも低エネルギー側にあるため、発
振波長では吸収層（＝活性層）の吸収係数が小さくなっ
てしまうという問題があるが、この素子では、オフ時に
は吸収層に逆バイアスが印加され、それに伴う量子閉じ
込め光シュタルク効果（ＱＣ８Ｅ）で吸収域が長波長方
向にシフトするので、それによってレーザ光は効率よく
吸収される。
（実施例） 第１図は本発明を適用した垂直共振器型ＶＳＴＥＰの断
面図である。ｎ−ＧａＡｓ基板１の上にｎ型半導体多層
膜（ドーピング濃度５刈０１７ｃｍ−３）２、ｐ−Ｇａ
Ａｓ（ドーピング濃度１×１０１９ｃｍ−３、層厚５０
ん３、ノンドープのＧａＡｓ（層厚〜１５００Å）４、
量子井戸層となるノンドープのＩｎＯ，２Ｇａ□、ＢＡ
ｓ（濃度１００人）５、ノンドープのＧａＡｓ（層厚〜
５００人）６、ｎ−ＧａＡｓ（ドーピング濃度３×１０
１７ｃｍ−３、層厚−１０００人）７、ｐ型半導体多層
膜（ドーピング濃度５×１０１８ｃｍ−３）８が、分子
線ビームエピタキシー法で形成されている。ｎ型半導体
多層膜２ではｎ−ＧａＡＳ９とｎ−ＡＬＡｓｌＯとがそ
れぞれ厚さ約６７２Ａと８０４Ａに設定されていて交互
に１０ペア積層され、形成されている。ｐ型半導体多層
膜８でも同様にｐ−ＧａＡｓ１ｌとｐ−ＡｌＡｓ１２と
がそれぞれ厚さ約６７２Ａと８０４Ａに設定されていて
交互に３０ペア積層され、形成されている。３〜７より
なる中間層の層厚はレーザ発振の媒質的波長（ここでは
共振波長、９５００人として約０．３□ｍ）の整数倍に
設定されている。バイアス電圧は上下のｎ型電極１３、
ｐ型電極１４によって印加され、光入出力はｎ−ＧａＡ
Ｓ基板を通して行われる。
本実施例の素子はオフ時に吸収率９９．９２％の吸収層
として動作し、オン時には活性層として働く。
（発明の効果） 本発明を適用するならば、４５°ミラーを用いずに基板
に垂直方向にレーザ発振し、しかもレーザ発振と同一の
波長で非常に高受光効率のＶＳＴＥＰが実現できる。本
実施例では半導体材料の場合について説明したが他の材
料系の場合に対しても適用できる。
【図面の簡単な説明】
第１図は本発明の垂直共振器型ＶＳＴＥＰの断面図。第
２図は吸収増大効果を説明するだめの図。第３図は従来
のＬＥＤ−ＶＳＴＥＰの断面図。第４図は従来のＬＤ−
ＶＳＴＥＰノ断面図。 図に於て、１はｎ−ＧａＡｓ基板、２はｎ型半導体多層
膜、３はｐ−ＧａＡｓ、４はノンドープのＧａＡｓ、５
は活性層となるノンドープのＩｎ□、２Ｇａｏ、ＢＡｓ
、６はノンドープのＧａＡｓ、７はｎ−ＧａＡｓ、８は
ｐ型半導体多層膜、９はｎ−ＧａＡｓ、１０はｎ−Ａｌ
Ａｓ、　１１はｐ−ＧａＡｓ、１２はｐ−ＡｌＡｓ、１
３はｎ型電極、１４はｐ型電極。

Claims (1)

    【特許請求の範囲】
  1. ｐｎｐｎ構造と、ｐｎｐｎ構造の中に光吸収層兼活性層
    として動作する量子井戸層とを有し、該量子井戸層の上
    下にガイド層を備え、該ガイド層の上下に多層膜反射鏡
    を備え、前記量子井戸層と前記ガイド層からなる中間層
    の層厚が媒質内発振波長の整数倍であることを特徴とす
    る垂直共振器型面入出力光電融合素子。
JP21883390A 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子 Expired - Lifetime JP2596195B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP21883390A JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子
CA002049448A CA2049448C (en) 1990-08-20 1991-08-19 Vertical cavity type vertical to surface transmission electrophotonic device
DE69120614T DE69120614T2 (de) 1990-08-20 1991-08-20 Elektrophotonische Vorrichtung mit vertikalem Resonator vom "vertical to surface" Übertragungstyp
EP91113897A EP0474018B1 (en) 1990-08-20 1991-08-20 Vertical cavity type vertical to surface transmission electrophotonic device
US07/747,561 US5229627A (en) 1990-08-20 1991-08-20 Vertical cavity type vertical to surface transmission electrophotonic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21883390A JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子

Publications (2)

Publication Number Publication Date
JPH04101483A true JPH04101483A (ja) 1992-04-02
JP2596195B2 JP2596195B2 (ja) 1997-04-02

Family

ID=16726058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21883390A Expired - Lifetime JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子

Country Status (5)

Country Link
US (1) US5229627A (ja)
EP (1) EP0474018B1 (ja)
JP (1) JP2596195B2 (ja)
CA (1) CA2049448C (ja)
DE (1) DE69120614T2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293393A (en) * 1992-04-10 1994-03-08 Nec Corporation Vertical-to-surface transmission electrophotonic device
US5361273A (en) * 1992-11-04 1994-11-01 Nec Corporation Semiconductor optical surface transmission device
JP2022533408A (ja) * 2019-05-20 2022-07-22 ゼノリクス・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 向上した検出結果を持つ光検出器

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US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
JPH0669585A (ja) * 1992-08-12 1994-03-11 Fujitsu Ltd 面発光半導体レーザ及びその製造方法
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors
JP3207590B2 (ja) * 1993-03-15 2001-09-10 富士通株式会社 光半導体装置
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity
US5498863A (en) * 1993-04-30 1996-03-12 At&T Corp. Wavelength-sensitive detectors based on absorbers in standing waves
KR0147589B1 (ko) * 1994-05-31 1998-10-15 김광호 수직공진기 면발광 레이저 다이오드를 이용한 광픽엎
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5701327A (en) * 1996-04-30 1997-12-23 Lucent Technologies Inc. Saturable Bragg reflector structure and process for fabricating the same
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JP2596195B2 (ja) 1997-04-02
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CA2049448C (en) 1994-07-26
US5229627A (en) 1993-07-20
DE69120614D1 (de) 1996-08-08
EP0474018A3 (en) 1992-05-13
EP0474018A2 (en) 1992-03-11
CA2049448A1 (en) 1992-02-21

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