JPH0410209A - Magnetoresistive playback head - Google Patents
Magnetoresistive playback headInfo
- Publication number
- JPH0410209A JPH0410209A JP10999990A JP10999990A JPH0410209A JP H0410209 A JPH0410209 A JP H0410209A JP 10999990 A JP10999990 A JP 10999990A JP 10999990 A JP10999990 A JP 10999990A JP H0410209 A JPH0410209 A JP H0410209A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductor
- magnetic field
- magnetoresistive
- conductor part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【産業上の利用分野]
本発明は磁気記録装置において高密度磁気記録に適した
磁気ヘッドを提供するものである。
【従来の技術1
磁気抵抗効果型再生ヘッド(以下、MRヘッド)は磁気
抵抗効果素子(以下、M R素子)に定電流(センス電
流)を通電し、信号磁界をMR素子両端に生しる電圧変
化として検出する磁気センサーである。
信号磁界はMR素子内の磁化を回転させ、磁化とセンス
電流のなす角をθとすると、cos2θ に比例する電
圧変化がMR素子の両端に発生する機構になっている。
実際に磁気ヘッドとして用いる場合は、出力電圧を増や
すために予めθL:45゜の角度を与える必要がある。
1つの方法はMR素子に隣接した導体層を設け、素子の
磁化容易方向に電流を流してMR素子の困難方向にバイ
アス磁界を印加する方法である。この時MR素子内の磁
化容易方向と検出電流方向は一致させておき、困難方向
のバイアス磁界を制御して最適な磁化の角度を与えてい
る。
実用に当たってもう1つの問題がある。それはMR素子
内の不安定な磁化状態に起因するバルクハウゼンノイズ
である。磁気テープ装置等記録媒体のトラック幅が数1
0μmある場合、つまり、アスペクト比(媒体垂直方向
の素子の高さに対するトラック幅方向の素子の長さの比
)を十分に大きく採ることが可能な場合にはMR素子内
の磁化状態を形状異方性によって安定させることができ
た。しかし、高記録密度化に伴う狭トラツク化が進むに
つれて形状異方性による磁化状態の安定化が期待できな
くなりつつある。
そこで、MR素子の磁化容易方向にバイアス磁界を印加
して積極的に磁化の安定化を図る必要が生じてきた。1
つの方法としてMR素子の磁化容易方向に鎖交する導体
層を形成し、その導体層に電流を流すことによってバイ
アス磁界を発生させる方法がある。しかし、必要な磁界
を得るためには数100mA程度の電流を必要とし、均
一な磁界を印加することが田型であった。
さらには以上のようなバイアス方式を採用した結果、セ
ンス電流用電源、及び、2方向のバイアス電源がそれぞ
れ必要になり、装置構成が複雑なるという問題点があっ
た。
なお、本発明に関連する従来例として、特開昭56−1
65924、特開昭59−121616などを挙げるこ
とができる。
【発明が解決しようとする課題】
本発明の目的はバルクハウゼンノイズを低減させるため
にMR素子の磁化容易方向に均一なバイアス磁界の印加
を可能とする一方、必要な電源数の簡素化を図ることで
ある。[Industrial Application Field] The present invention provides a magnetic head suitable for high-density magnetic recording in a magnetic recording device. [Conventional technology 1] A magnetoresistive reproducing head (hereinafter referred to as MR head) passes a constant current (sense current) through a magnetoresistive element (hereinafter referred to as MR element) to generate a signal magnetic field at both ends of the MR element. This is a magnetic sensor that detects voltage changes. The signal magnetic field rotates the magnetization within the MR element, and when the angle between the magnetization and the sense current is θ, the mechanism is such that a voltage change proportional to cos2θ is generated across the MR element. When actually used as a magnetic head, it is necessary to provide an angle of θL: 45° in advance in order to increase the output voltage. One method is to provide a conductor layer adjacent to the MR element and apply a bias magnetic field in the difficult direction of the MR element by passing a current in the direction of easy magnetization of the element. At this time, the direction of easy magnetization in the MR element and the direction of the detection current are made to match, and the bias magnetic field in the difficult direction is controlled to provide an optimal magnetization angle. There is another problem in practical use. This is Barkhausen noise caused by an unstable magnetization state within the MR element. The track width of recording media such as magnetic tape devices is several 1
If it is 0 μm, that is, if the aspect ratio (the ratio of the length of the element in the track width direction to the height of the element in the direction perpendicular to the medium) can be made sufficiently large, the magnetization state in the MR element can be changed to a different shape. It was possible to stabilize it by adjusting the orientation. However, as the tracks become narrower due to higher recording densities, stabilization of the magnetization state due to shape anisotropy is no longer expected. Therefore, it has become necessary to actively stabilize the magnetization by applying a bias magnetic field in the direction of easy magnetization of the MR element. 1
One method is to form a conductor layer that interlinks with the direction of easy magnetization of the MR element, and to generate a bias magnetic field by passing a current through the conductor layer. However, in order to obtain the necessary magnetic field, a current of about several 100 mA is required, and it is best to apply a uniform magnetic field. Furthermore, as a result of adopting the bias method as described above, a sense current power supply and a bias power supply in two directions are required, respectively, resulting in a problem that the device configuration becomes complicated. In addition, as a conventional example related to the present invention, Japanese Patent Laid-Open No. 56-1
65924, JP-A-59-121616, and the like. [Problems to be Solved by the Invention] An object of the present invention is to make it possible to apply a uniform bias magnetic field in the direction of easy magnetization of an MR element in order to reduce Barkhausen noise, while simplifying the number of required power supplies. That's true.
MR素子の磁化容易方向両端にそれぞれ鎖交する形で導
体層を形成し、それぞれの導体層の一部をMR素子の磁
化容易方向端部に電気的に接触させ、さらにMR素子に
隣接し、かつ、磁化容易方向に平行に電流が流れるよう
に2つの導体層の間にバイパス導体層を設けることによ
って上記目的は達成される。
[作用]
本発明の作用を第1図、第2図を用いて説明する。第1
図は本発明の基本的構成を示す回路図であり、第2図は
本発明の一実施例の磁気ヘッド要部の斜視図である。
本発明による導体層構造は第2図に示すように。
電極1bと1dはバイパス導体部3で接続されて凹形の
下部導体層をなし、電極1aは導体部4aによって、あ
るいは、電極1cは導体部4bによって下部導体層に接
続されている。さらに電極1aと1cはMR膜2と電気
的に接触している。
本発明の磁気ヘッドを実際に使用するときは。
例えば、電極1b、1cを零電位と接続し、1aは正電
位、1dは負電位の定電流源と接続する。
このような接続によって電源から電極1aに流れる電流
は以下の3つの経路を取る。
1つはMR素子2、電ViL c、導体部4bを経て電
極1dに流れる経路である(経路1)。ここで、電極1
8.10間の電圧の変化がMR比出力なる。
2つ目は導体部4a、バイパス導体部3を経て電極1d
に流れる経路である(経路2)。バイパス導体部3を流
れる電流によってMR素子の磁化困難方向に磁界が印加
される。バイパス導体部3の電気抵抗を制御することに
よって電流値を調整し、最適な磁界を発生させることが
可能である。
3つ目は導体部4aがら電極1bに流れる経路である(
経路3)。ここで、電極1dには負の電位が与えられて
いるために同時に電極1cがら1dにも電流が流れてい
る。
1aから1b、1cから1dの向きに電流が流れるため
に、MR素子の磁化容易方向の両端に同じ向きの磁界が
発生する。ここではMR素子印加される磁界の勾配を小
さくするためにMR素子に最も近い電極1a、1cの電
流値を等しくするように電極1dの電位を決定する。こ
の効果にょってMR素子全体に均一な磁界が印加される
ことになる。
(実施例]
第2図を用いて電極導体層およびMR素子部分の製作順
序を説明する。
最初に電極1b、バイパス導体部3および、電極1dか
ら成る凹型の導体層を積層する。導体層は膜厚0.2μ
mのCuである。導体パターンの形成は通常のホトリソ
グラフィ技術を用いて行なった。次に絶縁層として膜厚
0615μmのSiO2(図示せず)を積層し、引き続
き導体部4用のスルーホールを形成する。導体部4は下
部導体と同じCuであり、高さは絶縁層と同じ<0.1
5μmである。続いてMR膜2を蒸着する。本実施例で
はMR膜として膜厚0,04μm、長さ16μm、高さ
8μm、トラック幅4μmの大きさで82 N i −
18F eを用いた。MR膜2を蒸着後、電極1a、I
Cを積層してMR素子および電極部分の形成を完成する
。
本実施例では電極1aに+60mAの定電流源を接続し
、経路1、経路2、経路3にそれぞれ10mA、30m
A、20mA流れるように各電極、導体層の抵抗比を決
定し、そして電極1aと同じ<60mAの電流が電極1
cに流れるように一100mAの定電流源を電極1dに
接続した。本実施例では導体層のパターン幅を変えて抵
抗比を制御した。しかし、抵抗値を制御する方法として
は、例えば、導体部4a、4bをW、Nb、Mo等、C
uとは抵抗率の異なる金属で積層する方法や電極と電源
等の間に抵抗を接続する方法がある。
第3図はMR素子に鎖交する導体から発生する磁界の空
間分布を示したもので、図の曲線aは両端の磁化困難方
向磁界印加用導体に電流を流した場合、曲線すは片端の
み磁化困難方向磁界印加用導体に電流を流した場合を示
している。この結果によれば、間隔を開け、同方向に電
流を流した2つの導体から発生する磁界は導体の中間部
で磁界勾配が無く、−様な磁界になっていることが分か
る。
第4図は本発明によるバルクハウゼンノイズ抑制の効果
を比較したものである。図中の破線は本実施例と同じ素
子形状で容易方向のバイアスのない場合、−点鎖線は電
Vi1 cと1dをともに零電位に接続し、つまり、素
子容易方向の片側のみからバイアスを印加した場合、実
線は本発明の場合である。本発明によって、MR膜の容
易方向に均一な磁場を印加することが可能となり、狭ト
ランク対応のアスペクト比が小さい素子(本実施例では
アスペクト比2)でもバルクハウゼンノイズの無い再生
出力を得られることがわかる。
その他の実施例を第5図と第6図に示す。第5図はヨー
ク型MRヘッドである(実施例2)。第6図はトラック
幅分のみ記録媒体面に突出した凸型MRヘッドである(
実施例3)。ヨーク型MRヘッドや凸型MRヘッドを用
いると電極とMR素子が完全に鎖交する構造にヘッドを
形成することが可能になり、磁化容易方向のバイアスを
より効率良く印加できる。この結果動作に必要な電流を
少なくすることができる。forming conductor layers interlinking with both ends of the MR element in the direction of easy magnetization, a part of each conductor layer electrically contacting the ends of the MR element in the direction of easy magnetization, and further adjacent to the MR element; Moreover, the above object is achieved by providing a bypass conductor layer between two conductor layers so that a current flows in parallel to the direction of easy magnetization. [Operation] The operation of the present invention will be explained using FIGS. 1 and 2. 1st
The figure is a circuit diagram showing the basic configuration of the present invention, and FIG. 2 is a perspective view of the main part of a magnetic head according to an embodiment of the present invention. The conductor layer structure according to the present invention is shown in FIG. Electrodes 1b and 1d are connected by a bypass conductor part 3 to form a concave lower conductor layer, and electrode 1a is connected to the lower conductor layer by a conductor part 4a, or electrode 1c is connected to the lower conductor layer by a conductor part 4b. Furthermore, the electrodes 1a and 1c are in electrical contact with the MR film 2. When actually using the magnetic head of the present invention. For example, the electrodes 1b and 1c are connected to zero potential, 1a is connected to a constant current source of positive potential, and 1d is connected to a constant current source of negative potential. With such a connection, the current flowing from the power source to the electrode 1a takes the following three paths. One path is a path that flows to the electrode 1d via the MR element 2, the voltage ViLc, and the conductor portion 4b (path 1). Here, electrode 1
The change in voltage between 8.10 and 10 is the MR ratio output. The second is the electrode 1d via the conductor part 4a and the bypass conductor part 3.
(route 2). The current flowing through the bypass conductor section 3 applies a magnetic field in the direction in which the MR element is difficult to magnetize. By controlling the electrical resistance of the bypass conductor section 3, it is possible to adjust the current value and generate an optimal magnetic field. The third is a path flowing from the conductor portion 4a to the electrode 1b (
Route 3). Here, since a negative potential is applied to the electrode 1d, current also flows from the electrode 1c to the electrode 1d at the same time. Since the current flows in the directions from 1a to 1b and from 1c to 1d, magnetic fields in the same direction are generated at both ends of the MR element in the direction of easy magnetization. Here, in order to reduce the gradient of the magnetic field applied to the MR element, the potential of the electrode 1d is determined so that the current values of the electrodes 1a and 1c closest to the MR element are made equal. Due to this effect, a uniform magnetic field is applied to the entire MR element. (Example) The manufacturing order of the electrode conductor layer and the MR element part will be explained using FIG. Film thickness 0.2μ
It is Cu of m. The conductor pattern was formed using ordinary photolithography technology. Next, SiO2 (not shown) with a film thickness of 0615 μm is laminated as an insulating layer, and subsequently, through holes for the conductor portions 4 are formed. The conductor part 4 is made of Cu, which is the same as the lower conductor, and the height is <0.1, which is the same as the insulating layer.
It is 5 μm. Subsequently, the MR film 2 is deposited. In this example, the MR film has a thickness of 0.04 μm, a length of 16 μm, a height of 8 μm, and a track width of 4 μm.
18Fe was used. After depositing the MR film 2, the electrodes 1a and I
C is laminated to complete the formation of the MR element and electrode portion. In this example, a constant current source of +60 mA is connected to the electrode 1a, and 10 mA and 30 mA are connected to the path 1, path 2, and path 3, respectively.
A, determine the resistance ratio of each electrode and conductor layer so that 20 mA flows, and the same current of <60 mA as electrode 1a flows through electrode 1.
A constant current source of -100 mA was connected to the electrode 1d so that the current was flowing at the electrode 1d. In this example, the resistance ratio was controlled by changing the pattern width of the conductor layer. However, as a method of controlling the resistance value, for example, the conductor parts 4a and 4b are made of W, Nb, Mo, etc.
There are a method of laminating metals with different resistivity from u and a method of connecting a resistor between the electrode and the power source. Figure 3 shows the spatial distribution of the magnetic field generated from the conductor interlinking with the MR element.Curve a in the figure shows that when a current is passed through the conductor for applying a magnetic field in the difficult-to-magnetize direction at both ends, the curve a is only at one end. A case is shown in which a current is passed through a conductor for applying a magnetic field in a difficult-to-magnetize direction. According to this result, it can be seen that the magnetic field generated from two conductors spaced apart and having current flowing in the same direction has no magnetic field gradient in the middle part of the conductors, and becomes a --like magnetic field. FIG. 4 compares the effect of Barkhausen noise suppression according to the present invention. The broken line in the figure is the same element shape as this example, and when there is no bias in the easy direction, the - dotted line connects both voltages Vi1c and 1d to zero potential, that is, bias is applied only from one side in the element easy direction. In this case, the solid line is the case of the present invention. The present invention makes it possible to apply a uniform magnetic field in the easy direction of the MR film, making it possible to obtain reproduction output without Barkhausen noise even with an element with a small aspect ratio (in this example, the aspect ratio is 2) that is compatible with a narrow trunk. I understand that. Other embodiments are shown in FIGS. 5 and 6. FIG. 5 shows a yoke type MR head (Embodiment 2). Figure 6 shows a convex MR head that protrudes from the recording medium surface by the track width (
Example 3). When a yoke-type MR head or a convex-type MR head is used, the head can be formed in a structure in which the electrode and the MR element are completely interlinked, and a bias in the direction of easy magnetization can be applied more efficiently. As a result, the current required for operation can be reduced.
本発明によって、簡素な構成でありながらバルクハウゼ
ンノイズが低減し、高密度磁気記録に適した磁気ヘッド
を提供することができる。According to the present invention, it is possible to provide a magnetic head that has a simple configuration, reduces Barkhausen noise, and is suitable for high-density magnetic recording.
第1図は本発明の回路構成図、第2図は本発明の実施例
1の磁気ヘッドの要部斜視図、第3図は本発明しこよる
磁化容易方向のバイアス磁界の空間分布図、第4図は磁
界−出力特性曲線図、第5図、第6図は本発明の他の実
施例の磁気ヘッドの要部斜視図である。
符号の説明
1a、1b、1c、1 d−・・電極、2 ・・M R
素子、3・・・バイパス導体部、4a、4b・・・導体
部、5・・仙=L2
V1ンθ、Vz<0
C(L) rifijを一庚乙巨淳i方向砥界師力ロ用
壽イ本:1電4Lカk(たり1さ(b) 乃1浄の2
に釦どノ困艷方陶友吃和p1rJ月11本イト1−電次
をン賃λ7=j#巣
図
t
■
図FIG. 1 is a circuit configuration diagram of the present invention, FIG. 2 is a perspective view of essential parts of a magnetic head according to Embodiment 1 of the present invention, and FIG. 3 is a spatial distribution diagram of a bias magnetic field in the direction of easy magnetization according to the present invention. FIG. 4 is a magnetic field-output characteristic curve diagram, and FIGS. 5 and 6 are perspective views of essential parts of a magnetic head according to another embodiment of the present invention. Explanation of symbols 1a, 1b, 1c, 1 d--electrode, 2...M R
Element, 3... Bypass conductor part, 4a, 4b... Conductor part, 5... Sen=L2 V1n θ, Vz<0 C(L) Yojui Book: 1 Den 4L Kak (Tari 1 Sa (b) No 1 Jo no 2
If you have trouble with the button, please use it p1rJ month 11 pieces 1-electronic charge λ7=j#nest diagram t ■ Figure
Claims (1)
、および磁化容易方向磁界印加用導体を備えた磁気抵抗
効果型再生ヘッドにおいて、2個の電源を用いて上記3
個の導体に電流を流すことを特徴とする磁気抵抗効果型
再生ヘッド。 2、磁気抵抗効果素子の両端に設けた抵抗変化検出用導
体パターン、絶縁層を介して磁気抵抗効果素子に隣接し
て設けた磁化困難方向磁界印加用導体パターンを有する
磁気抵抗効果型再生ヘッドにおいて、磁気抵抗効果素子
の両端部で、一方の抵抗変化検出用導体パターンと一方
の磁界印加用導体パターンがそれぞれ接続され、磁気抵
抗効果素子を周回するようにに形成されていることを特
徴とする特許請求の範囲第1項記載の磁気抵抗効果型再
生ヘッド。 3、電極端子4個を持ち、内1個が正、1個が負の電位
を持つ定電流源と、残り2個が零電位と接続される導体
層形状を特徴とする特許請求の範囲第2項記載の磁気抵
抗効果型再生ヘッド。[Claims] 1. In a magnetoresistive reproducing head equipped with a conductor for detecting resistance change, a conductor for applying a magnetic field in the direction of hard magnetization, and a conductor for applying a magnetic field in the direction of easy magnetization, the above-mentioned 3.
A magnetoresistive playback head that is characterized by passing current through individual conductors. 2. In a magnetoresistive read head having a conductor pattern for detecting resistance change provided at both ends of the magnetoresistive element, and a conductor pattern for applying a magnetic field in a direction of difficult magnetization provided adjacent to the magnetoresistive element via an insulating layer. , characterized in that one conductor pattern for detecting a resistance change and one conductor pattern for applying a magnetic field are connected at both ends of the magnetoresistive element, and are formed so as to go around the magnetoresistive element. A magnetoresistive reproducing head according to claim 1. 3. A constant current source having four electrode terminals, one of which has a positive potential and one of which has a negative potential, and the remaining two have a conductor layer shape connected to a zero potential. 2. The magnetoresistive reproducing head according to item 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10999990A JPH0410209A (en) | 1990-04-27 | 1990-04-27 | Magnetoresistive playback head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10999990A JPH0410209A (en) | 1990-04-27 | 1990-04-27 | Magnetoresistive playback head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0410209A true JPH0410209A (en) | 1992-01-14 |
Family
ID=14524534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10999990A Pending JPH0410209A (en) | 1990-04-27 | 1990-04-27 | Magnetoresistive playback head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0410209A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600166B2 (en) | 2000-07-26 | 2003-07-29 | Kabushiki Kaisha Toshiba | Scanning exposure method |
-
1990
- 1990-04-27 JP JP10999990A patent/JPH0410209A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600166B2 (en) | 2000-07-26 | 2003-07-29 | Kabushiki Kaisha Toshiba | Scanning exposure method |
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