JPH0410335U - - Google Patents
Info
- Publication number
- JPH0410335U JPH0410335U JP5205290U JP5205290U JPH0410335U JP H0410335 U JPH0410335 U JP H0410335U JP 5205290 U JP5205290 U JP 5205290U JP 5205290 U JP5205290 U JP 5205290U JP H0410335 U JPH0410335 U JP H0410335U
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- chamber
- exhaust
- exhaust port
- dispersion plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006185 dispersion Substances 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 2
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は従来例の断面図である。
１４は真空容器、１６は上電極、１７は下電極
ユニツト、２１は下電極、２４は排気分散板、２
５は分散孔、２７はダクト室、２８は反応ガス導
入口、３０は排気口を示す。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a sectional view of a conventional example. 14 is a vacuum vessel, 16 is an upper electrode, 17 is a lower electrode unit, 21 is a lower electrode, 24 is an exhaust dispersion plate, 2
5 is a dispersion hole, 27 is a duct chamber, 28 is a reaction gas inlet, and 30 is an exhaust port.
Claims (1)
板により、下電極を含む処理室と下電極下方のド
ーナツツ状のダクト室とに仕切り、前記排気分散
板に所要数の分散孔を穿設し、前記真空容器壁部
にダクト室と連通する排気口を設け、前記処理室
に反応ガスを導入すると共に該排気口より排出す
る様構成したことを特徴とするプラズマ処理装置
。 The inside of the vacuum container is partitioned into a processing chamber containing the lower electrode and a donut-shaped duct chamber below the lower electrode by an exhaust dispersion plate provided around the lower electrode, and a required number of dispersion holes are bored in the exhaust dispersion plate. A plasma processing apparatus, characterized in that an exhaust port communicating with a duct chamber is provided in the wall of the vacuum chamber, and a reaction gas is introduced into the processing chamber and discharged from the exhaust port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990052052U JPH087627Y2 (en) | 1990-05-18 | 1990-05-18 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990052052U JPH087627Y2 (en) | 1990-05-18 | 1990-05-18 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410335U true JPH0410335U (en) | 1992-01-29 |
| JPH087627Y2 JPH087627Y2 (en) | 1996-03-04 |
Family
ID=31572030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990052052U Expired - Lifetime JPH087627Y2 (en) | 1990-05-18 | 1990-05-18 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087627Y2 (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59144132A (en) * | 1983-02-07 | 1984-08-18 | Hitachi Ltd | Reaction apparatus |
| JPS6129126A (en) * | 1984-07-20 | 1986-02-10 | Hitachi Ltd | Plasma treatment method |
| JPS6350127U (en) * | 1986-09-19 | 1988-04-05 | ||
| JPS6393114A (en) * | 1986-10-08 | 1988-04-23 | Tokuda Seisakusho Ltd | dry etching equipment |
| JPS63141318A (en) * | 1986-12-04 | 1988-06-13 | Oki Electric Ind Co Ltd | Gas evacuating device for sample treatment |
| JPS63194335A (en) * | 1987-02-09 | 1988-08-11 | Tokuda Seisakusho Ltd | Plasma treatment method |
| JPS63227021A (en) * | 1987-03-17 | 1988-09-21 | Toshiba Corp | Dry etching system |
| JPH01189126A (en) * | 1988-01-25 | 1989-07-28 | Tokyo Electron Ltd | Etching apparatus |
| JPH01258428A (en) * | 1988-04-08 | 1989-10-16 | Nec Corp | Semiconductor manufacturing device |
| JPH01283391A (en) * | 1988-05-09 | 1989-11-14 | Tokyo Electron Ltd | Etching device |
-
1990
- 1990-05-18 JP JP1990052052U patent/JPH087627Y2/en not_active Expired - Lifetime
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59144132A (en) * | 1983-02-07 | 1984-08-18 | Hitachi Ltd | Reaction apparatus |
| JPS6129126A (en) * | 1984-07-20 | 1986-02-10 | Hitachi Ltd | Plasma treatment method |
| JPS6350127U (en) * | 1986-09-19 | 1988-04-05 | ||
| JPS6393114A (en) * | 1986-10-08 | 1988-04-23 | Tokuda Seisakusho Ltd | dry etching equipment |
| JPS63141318A (en) * | 1986-12-04 | 1988-06-13 | Oki Electric Ind Co Ltd | Gas evacuating device for sample treatment |
| JPS63194335A (en) * | 1987-02-09 | 1988-08-11 | Tokuda Seisakusho Ltd | Plasma treatment method |
| JPS63227021A (en) * | 1987-03-17 | 1988-09-21 | Toshiba Corp | Dry etching system |
| JPH01189126A (en) * | 1988-01-25 | 1989-07-28 | Tokyo Electron Ltd | Etching apparatus |
| JPH01258428A (en) * | 1988-04-08 | 1989-10-16 | Nec Corp | Semiconductor manufacturing device |
| JPH01283391A (en) * | 1988-05-09 | 1989-11-14 | Tokyo Electron Ltd | Etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH087627Y2 (en) | 1996-03-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |