JPH04106947A - Interlattice oxygen concentration measurement of pulled-up silicon wafer - Google Patents
Interlattice oxygen concentration measurement of pulled-up silicon waferInfo
- Publication number
- JPH04106947A JPH04106947A JP22471190A JP22471190A JPH04106947A JP H04106947 A JPH04106947 A JP H04106947A JP 22471190 A JP22471190 A JP 22471190A JP 22471190 A JP22471190 A JP 22471190A JP H04106947 A JPH04106947 A JP H04106947A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- polished
- pulled
- oxygen concentration
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 128
- 239000010703 silicon Substances 0.000 title claims abstract description 128
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 239000001301 oxygen Substances 0.000 title claims abstract description 46
- 238000005259 measurement Methods 0.000 title abstract description 13
- 230000005540 biological transmission Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000005498 polishing Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 116
- 238000002835 absorbance Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 1
- 101100518046 Rattus norvegicus Oasl gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の目的
［産業上の利用分野］
本発明は、引上シリコンウェーハの格子間酸素濃度測定
方法に関し、特に、表裏両面が化学研磨された未鏡面研
磨の引上シリコンウェーハに対し平行偏光をブリュース
ター角で入射せしめて測定した光透過特性と表裏両面が
鏡面研磨された対照としての浮遊帯域シリコンウェーハ
に対し平行偏光をブリュースター角で入射せしめて測定
した光透過特性とから引上シリコンウェーハの格子間酸
素濃度を算出してなる引上シリコンウェーハの格子間酸
素濃度測定方法に関するものである。Detailed Description of the Invention (1) Purpose of the Invention [Field of Industrial Application] The present invention relates to a method for measuring interstitial oxygen concentration in pulled silicon wafers, and particularly relates to a method for measuring the interstitial oxygen concentration of pulled silicon wafers, and in particular, the present invention relates to a method for measuring interstitial oxygen concentration in pulled silicon wafers. Light transmission properties were measured with parallel polarized light incident at Brewster's angle on a pulled silicon wafer, and parallel polarized light was measured at Brewster's angle on a floating band silicon wafer as a control whose front and back surfaces were mirror polished. The present invention relates to a method for measuring the interstitial oxygen concentration of a pulled silicon wafer by calculating the interstitial oxygen concentration of the pulled silicon wafer from light transmission characteristics.
［従来の技術］
従来、この種の引上シリコンウェーハの格子間酸素濃度
測定方法としては、表裏両面が化学研磨された未鏡面研
磨の引上シリコンウェーハと、表裏両面が化学研磨によ
ってシリコンウェーハの表裏両面と同一の光学的挙動を
確保するよう加工された対照としての浮遊帯域シリコン
ウェーハとに対して赤外光を同時に入射せしめることに
より、引上シリコンウェーハの光透過特性および浮遊帯
域シリコンウェーハの光透過特性を測定して引上シリコ
ンウェーハの格子間酸素濃度を求めてなるものが、提案
されていた。[Prior art] Conventionally, this type of method for measuring interstitial oxygen concentration in pulled silicon wafers has been carried out using pulled silicon wafers that have been chemically polished on both the front and back sides and are not mirror polished, and pulled silicon wafers that have been chemically polished on both the front and back sides. By simultaneously injecting infrared light into a floating zone silicon wafer as a control that has been processed to ensure the same optical behavior on both the front and back sides, the optical transmission characteristics of the pulled silicon wafer and the floating zone silicon wafer A method has been proposed in which the interstitial oxygen concentration of a pulled silicon wafer is determined by measuring the light transmission characteristics.
［解決すべき問題点］
しかしながら、従来の引上シリコンウェーハの格子間酸
素濃度測定方法では、引上シリコンウェーハの表裏両面
が未だ鏡面研磨されていなかったので、（ｉｌ光学的な
挙動を同一とするために対照としての浮遊帯域シリコン
ウェーハの表裏両面も引上シリコンウェーハの表裏両面
と同様に化学研磨しなければならない欠点があり、ひい
てはｆｉｉ）測定作業が煩雑となる欠点があり、更に（
ｉｉｉｌ測定精度を改善できない欠点もあった。[Problems to be solved] However, in the conventional method for measuring the interstitial oxygen concentration of pulled silicon wafers, since both the front and back surfaces of the pulled silicon wafers have not yet been mirror-polished, In order to do this, both the front and back sides of the floating zone silicon wafer used as a control have to be chemically polished in the same way as the front and back sides of the pulled silicon wafer.
iii) There was also the drawback that measurement accuracy could not be improved.
そこで、本発明は、これらの欠点を除去する目的で、表
裏両面が鏡面研磨された浮遊帯域シリコンウェーハをそ
のまま対照として使用可能とすることにより測定作業を
簡潔としかつ測定精度を改善してなる引上シリコンウェ
ーハの格子間酸素濃度測定方法を提供せんとするもので
ある。Therefore, in order to eliminate these drawbacks, the present invention simplifies the measurement work and improves the measurement accuracy by making it possible to use a floating zone silicon wafer with mirror-polished surfaces on both sides as a control. The present invention aims to provide a method for measuring the interstitial oxygen concentration of upper silicon wafers.
（２）発明の構成
［問題点の解決手段］
本発明により提供される問題点の解決手段は、［（ａ）
表裏両面が化学研磨された未鏡面研磨の引上シリコンウ
ェーハに対し平行偏光をブリュースター角で入射せしめ
ることにより引上シリコンウェーハの光透過特性を測定
するための第１の工程と、
（ｂ）表裏両面が鏡面研磨された対照としての浮遊帯域
シリコンウェーハに対し平行偏光をブリュースター角で
入射せしめることにより浮遊帯域シリコンウェーハの光
透過特性を測定するための第２の工程と、
（ｃｌ第１の工程によって測定された引上シリコンウェ
ーハの光透過特性と第２の工程によって測定された浮遊
帯域シリコンウェーハの光透過特性とから引上シリコン
ウェーハの格子間酸素濃度を算出するための第３の工程
と
を備えてなる引上シリコンウェーハの格子間酸素濃度測
定方法」
である。(2) Structure of the invention [Means for solving the problems] The means for solving the problems provided by the present invention are [(a)
(b) a first step of measuring the light transmission characteristics of the pulled silicon wafer by making parallel polarized light incident at the Brewster angle on the unmirrored pulled silicon wafer whose front and back surfaces have been chemically polished; a second step for measuring the light transmission characteristics of the floating zone silicon wafer by making parallel polarized light incident at the Brewster angle on a floating zone silicon wafer as a control whose front and back surfaces are mirror-polished; A third step for calculating the interstitial oxygen concentration of the pulled silicon wafer from the light transmission characteristics of the pulled silicon wafer measured by the step and the light transmission characteristics of the floating zone silicon wafer measured by the second step. ``Method for measuring interstitial oxygen concentration in pulled silicon wafers'' comprising the steps of:
［作用］
本発明にかかる引上シリコンウェーハの格子間酸素濃度
測定方法は、上述の［問題点の解決手段］の欄に明示し
たごとく、表裏両面が化学研磨された未鏡面研磨の引上
シリコンウェーハの光透過特性と表裏両面が鏡面研磨さ
れた浮遊帯域シリコンウェーハの光透過特性とから引上
シリコンウェーハの格子間酸素濃度を算出しているので
、
（ｉ）表裏両面が鏡面研磨された浮遊帯域シリコンウェ
ーハを化学研磨することなく鏡面のままで使用可能とす
る作用
をなし、ひいては
（１１）測定作業を簡潔とする作用
をなし、更に
（ｉｉｉ）測定精度を改善する作用
をなす。[Function] The method for measuring the interstitial oxygen concentration of pulled silicon wafers according to the present invention is applicable to pulling silicon wafers that have not been mirror-polished and have been chemically polished on both the front and back sides, as specified in the above-mentioned [Means for solving problems] section. Since the interstitial oxygen concentration of the pulled silicon wafer is calculated from the light transmission characteristics of the wafer and the light transmission characteristics of the floating zone silicon wafer whose front and back surfaces are mirror-polished, (i) the floating zone silicon wafer whose front and back surfaces are mirror-polished; This has the effect of allowing the silicon wafer to be used as a mirror surface without chemical polishing, which in turn (11) simplifies measurement work, and (iii) improves measurement accuracy.
［実施例］
次に、本発明にかかる引上シリコンウェーハの格子間酸
素濃度測定方法について、その好ましい実施例を挙げ、
添付図面を参照しつつ、具体的に説明する。[Example] Next, a preferred example of the method for measuring interstitial oxygen concentration of a pulled silicon wafer according to the present invention will be given.
This will be explained in detail with reference to the accompanying drawings.
」虎七ｍ凶ｌ肛り
第１図は、本発明にかかる引上シリコンウェーハの格子
間酸素濃度測定方法の一実施例を実行する測定装置を示
すための簡略構成図である。FIG. 1 is a simplified configuration diagram showing a measuring device for carrying out an embodiment of the method for measuring interstitial oxygen concentration in pulled silicon wafers according to the present invention.
第２図および第３図は、本発明にかかる引上シリコンウ
ェーハの格子間酸素濃度測定方法の一実施例を説明する
ための説明図である。FIGS. 2 and 3 are explanatory diagrams for explaining an embodiment of the method for measuring interstitial oxygen concentration of a pulled silicon wafer according to the present invention.
の ・
まず、本発明にかかる引上シリコンウェーハの格子間酸
素濃度測定方法の一実施例について、その構成および作
用を詳細に説明する。First, the structure and operation of an embodiment of the method for measuring the interstitial oxygen concentration of a pulled silicon wafer according to the present invention will be described in detail.
本発明にかかる引上シリコンウェーハの格子間酸素濃度
測定方法は、表裏両面が化学研磨された未鏡面研磨の引
上シリコンウェーハ（°°化学研磨引上シリコンウェー
ハ゛という）に対し平行偏光をブリュースター角で入射
せしめることにより引上シリコンウェーハ（すなわち化
学研磨引上シリコンウェーハ）の光透過特性（ここでは
透過光強度Ｉ。、、：以下同様）を測定するための第１
の工程と、表裏両面が化学研磨ののちに鏡面研磨された
対照としての浮遊帯域シリコンウェーハ（°゛鏡面研磨
浮遊帯域シリコンウェーハ”という）に対し平行偏光を
ブリュースター角φ、で入射せしめることにより浮遊帯
域シリコンウェーハ（すなわち鏡面研磨浮遊帯域シリコ
ンウェーハ）の光透過特性（ここでは透過光強度Ｉ０；
以下同様）を測定するための第２の工程と、第１の工程
によって測定された引上シリコンウェーハ（すなわち化
学研磨引上シリコンウェーハ）の光透過特性（ここでは
透過光強度１ ｏａｓｌと第２の工程によって測定され
た浮遊帯域シリコンウェーハ（すなわち鏡面研磨浮遊帯
域シリコンウェーハ）の光透過特性（ここでは透過光強
度工。）とから引上シリコンウェーハの格子間酸素濃度
［Ｏ，Ｃ］を算出するための第３の工程とを備えている
。The method for measuring the interstitial oxygen concentration of pulled silicon wafers according to the present invention involves applying parallel polarized light to an unmirror-polished pulled silicon wafer (referred to as chemically polished pulled silicon wafer) whose front and back surfaces have been chemically polished. The first method for measuring the light transmission characteristics (here, the transmitted light intensity I) of a pulled silicon wafer (i.e., a chemically polished pulled silicon wafer) by making it incident at
process, and by making parallel polarized light incident at the Brewster angle φ on a reference floating band silicon wafer (hereinafter referred to as "mirror polished floating band silicon wafer") whose front and back surfaces have been mirror polished after chemical polishing. Light transmission properties of floating zone silicon wafers (i.e. mirror-polished floating zone silicon wafers) (here transmitted light intensity I0;
The second step is to measure the light transmission characteristics of the pulled silicon wafer (i.e. chemically polished pulled silicon wafer) measured in the first step (here, the transmitted light intensity 1 oasl and the second Calculate the interstitial oxygen concentration [O, C] of the pulled silicon wafer from the light transmission characteristics (here, transmitted light intensity) of the floating zone silicon wafer (i.e., mirror-polished floating zone silicon wafer) measured by the process of and a third step for doing so.
第１．第２の工程で、それぞれ、引上シリコンウェーハ
（すなわち化学研磨引上シリコンウェーハ）および浮遊
帯域シリコンウェーハ（すなわち鏡面研磨浮遊帯域シリ
コンウェーハ）に対してそれぞれブリュースター角φ烏
で平行偏光を入射せしめる根拠は、引上シリコンウェー
ハ（すなわち化学研磨引上シリコンウェーハ）および浮
遊帯域シリコンウェーハ（すなわち鏡面研磨浮遊帯域シ
リコンウェーハ）への平行偏光の入射および８射に際し
て反射が生じることを実質的に阻止し、引上シリコンウ
ェーハ（すなわち化学研磨引上シリコンウェーハ）およ
び浮遊帯域シリコンウェーハ（すなわち鏡面研磨浮遊帯
域シリコンウェーハ）の内部で多重反射が生じることを
防止することにある。ここで、平行偏光とは、入射対象
（ここでは化学研磨引上シリコンウェーハならびに鏡面
研磨浮遊帯域シリコンウェーハ）への入射面に平行な成
分のみを有する偏光をいう。また、引上シリコンウェー
ハとは、引上法（いわゆる゛°チョクラルスキー法”）
によって製造されたシリコン単結晶から作成されたシリ
コンウェーハをいい、通常はシリコン単結晶の切断工程
によって発生した表裏両面の破砕層を除去するために機
械研磨工程ののちに化学研磨されている。更に、浮遊帯
域シリコンウェーハとは、浮遊帯域溶融法によって製造
されたシリコン単結晶から作成されたシリコンウェーハ
をいう。1st. In the second step, parallel polarized light is incident on a pulled silicon wafer (i.e., a chemically polished pulled silicon wafer) and a floating zone silicon wafer (i.e., a mirror polished floating zone silicon wafer) at a Brewster angle φ, respectively. The rationale is that reflections are substantially prevented from occurring upon incidence and incidence of parallel polarized light on pulled silicon wafers (i.e., chemically polished pulled silicon wafers) and floating zone silicon wafers (i.e., mirror polished floating zone silicon wafers). The purpose of the present invention is to prevent multiple reflections from occurring inside pulled silicon wafers (i.e., chemically polished pulled silicon wafers) and floating zone silicon wafers (i.e., mirror-polished floating zone silicon wafers). Here, parallel polarized light refers to polarized light having only components parallel to the plane of incidence on the incident objects (here, chemically polished pulled silicon wafers and mirror polished floating zone silicon wafers). In addition, pulled silicon wafers are produced using the pulling method (so-called “Czochralski method”).
A silicon wafer made from a silicon single crystal produced by a silicon wafer, which is usually chemically polished after a mechanical polishing process to remove the fractured layers on both the front and back surfaces caused by the silicon single crystal cutting process. Furthermore, floating zone silicon wafers refer to silicon wafers made from silicon single crystals produced by floating zone melting.
第２の工程で、浮遊帯域シリコンウェーハが対照として
採用されている根拠は、その格子間酸素濃度［０，、］
が引引上シリコンウェへの格子間酸素濃度［ｏ、ｃｌ
に比べて極めて小さいことにある。また、浮遊帯域シリ
コンウェーハの表裏両面が鏡面研磨されている根拠は、
入射光（ここでは平行偏光〕が表裏両面で散乱されるこ
とを防止することにある。In the second step, the floating zone silicon wafer is adopted as a control because its interstitial oxygen concentration [0,,]
is the interstitial oxygen concentration [o, cl
This is because it is extremely small compared to . In addition, the reason why both the front and back sides of the floating band silicon wafer are mirror polished is as follows.
The purpose is to prevent incident light (here, parallel polarized light) from being scattered on both the front and back surfaces.
第３の工程で、第１の工程によって測定された引上シリ
コンウェーハ（すなわち化学研磨引上シリコンウェーハ
）の光透過特性（ここでは透過光強度Ｉ。、、）と第２
の工程によって測定された浮遊帯域シリコンウェーハ（
すなわち鏡面研磨浮遊帯域シリコンウェーハ）の光透過
特性（ここでは透過光強度工。）とから引上シリコンウ
ェーハの格子間酸素濃度［０，ｃｌを算出する要領は、
以下のとおりである。In the third step, the light transmission characteristics (here, transmitted light intensity I) of the pulled silicon wafer (i.e., chemically polished pulled silicon wafer) measured in the first step and the second
Floating zone measured by the process of silicon wafer (
In other words, the procedure for calculating the interstitial oxygen concentration [0, cl of the pulled silicon wafer from the light transmission characteristics (in this case, transmitted light intensity) of the mirror-polished floating zone silicon wafer is as follows:
It is as follows.
まず、引上シリコンウェーハの格子間酸素濃度［０，ｃ
ｌは、引上シリコンウェーハの格子間酸素の振動に起因
した光吸収係数（“引上シリコンウェーハの光吸収係数
”ともいう）αＥと変換係数ｋ（現在３．０３Ｘ１０”
個／ｃＩ１１２と考えられている；以下同様）とを用い
て
［０＋ｃｌ ＝ｋａ。First, the interstitial oxygen concentration [0, c
l is the light absorption coefficient αE caused by the vibration of interstitial oxygen in the pulled silicon wafer (also referred to as the "light absorption coefficient of the pulled silicon wafer") and the conversion coefficient k (currently 3.03X10)
[0+cl = ka.
のどと（表現できる。ここで、引上シリコンウェーハの
光吸収係数α、は、格子間酸素の振動に起因した波数１
１０６ｃｍ−’における肉厚ｄの引上シリコンウェーハ
の吸光度Ａとブリュースター角φ８で入射された平行偏
光の光路長ｎ＝ １．０４２ｄとを用いて、ランベルト
−ベールの法則から、のごとく表現できる。(can be expressed as
From the Lambert-Beer law, it can be expressed as follows using the absorbance A of a pulled silicon wafer with a wall thickness d at 106 cm-' and the optical path length n = 1.042 d of parallel polarized light incident at a Brewster angle φ8. .
引上シリコンウェーハの吸光度Ａは、両面鏡面加工され
た引上シリコンウェーハ（°°鏡面研磨引上シリコンウ
ェーハ”ともいう）の光透過特性（ここでは透過光強度
Ｉ）と浮遊帯域シリコンウェーハ（すなわち鏡面研磨浮
遊帯域シリコンウェーハ）の光透過特性（ここでは透過
光強度工。）とを用いて
のごとく表現できるので、化学研磨引上シリコンウェー
ハの光透過特性（ここでは透過光強度工。ｍｓ）と鏡面
研磨浮遊帯域シリコンウェーハの光透過特性（ここでは
透過光強度■。）と化学研磨引上シリコンウェーハの表
面における光散乱特性にこては散乱光強度Ｉ、１）と化
学研磨引上シリコンウェーハの裏面における光散乱特性
（ここでは散乱光強度Ｉ３□）とを用いて
■。ａｓ ＋ Ｉ ｓ＋＋ Ｉ ｓ□−１Ａ＝、ｅ。（
□）
■。The absorbance A of a pulled silicon wafer is determined by the light transmission characteristics (here, transmitted light intensity I) of a pulled silicon wafer with mirror finishing on both sides (also referred to as "mirror polished pulled silicon wafer") and the floating zone silicon wafer (i.e. The light transmission characteristics (here, transmitted light intensity) of a mirror-polished floating zone silicon wafer can be expressed as follows: and the light transmission characteristics of the mirror-polished floating zone silicon wafer (here transmitted light intensity ■.) and the light scattering characteristics on the surface of the chemically polished pulled-up silicon wafer. Using the light scattering characteristics on the back side of the wafer (here, the scattered light intensity I3□), ■.as + I s++ I s□-1A=, e.(
□) ■.
のごとく表現できる。It can be expressed as follows.
したがって、引上シリコンウェーハの格子間酸素濃度［
０，ｃ］は、
［０１Ｃ］＝−Ｘ
１．０４２ｄ
Ｉ Ｏ！ＩＩＩ ＋ Ｉ ｓ＋＋ Ｉ ！１２−’ｆｆ
、ｆ ）
と求められる。Therefore, the interstitial oxygen concentration of the pulled silicon wafer [
0,c] is [01C]=-X 1.042d I O! III + I s++ I! 12-'ff
, f ) is obtained.
ここで、ｉ。（１°”ｓ ＋ Ｉ ＊＊＊ Ｉ ５ｚ）
−’は、化学研磨引上シリコンウェーハの光透過特性（
ここでは透過光強度１゜３．）およびその表裏両面にお
ける光散乱特性（ここでは散乱光強度Ｉｓ１．ｌ−７）
の和と鏡面研磨浮遊帯域シリコンウェーハの光透過特性
（ここでは透過光強度■。）との比の逆数の自然対数で
ある吸光度特性から算出されるが、具体的には格子間酸
素濃度［０，ｃ］が０でない場合の吸光度特性（実線で
示す）の波数１１０６ｃｍ−’における値（すなわちピ
ーク値）と格子間酸素濃度［０，ｅ］がＯである場合の
吸光度特性（破線で示す）の波数１１０６ｃｍ−’にお
ける値とから第２図に示したごとく求められる。Here, i. (1°”s + I *** I 5z)
−' is the light transmission characteristic of chemically polished pulled silicon wafer (
Here, the transmitted light intensity is 1°3. ) and the light scattering characteristics on both the front and back surfaces (here, the scattered light intensity Is1.l-7)
It is calculated from the absorbance property, which is the natural logarithm of the reciprocal of the ratio of the sum of . The value at a wave number of 1106 cm-' is obtained as shown in FIG.
の″
また、第１図を参照しつつ、本発明にかかる引上シリコ
ンウェーハの格子間酸素濃度測定方法の一実施例を実行
するための測定装置について、その構成および作用を詳
細に説明する。Furthermore, with reference to FIG. 1, the structure and operation of a measuring device for carrying out an embodiment of the method for measuring the interstitial oxygen concentration of a pulled silicon wafer according to the present invention will be described in detail.
艮は、本発明にかかる引上シリコンウェーハの格子間酸
素濃度測定方法を実行するための測定装置であって、グ
ローバー灯などの光源１１と、光源１１から与えられた
光を半透明鏡１２Ａによって２つに分けて可動鏡１２Ｂ
および固定鏡１２Ｃによって反射せしめたのち重ね合わ
せることにより干渉光を形成するマイケルソン干渉計１
２と、マイケルソン干渉計１２から与えられた光（すな
わち干渉光）を偏光せしめて得た平行偏光を試料（ここ
では化学研磨引上シリコンウェーハ）Ｍおよび対照（こ
こでは鏡面研磨浮遊帯域シリコンウェーハ）Ｒに与える
ための偏光子１３と、試料Ｍの光透過特性にこでは平行
偏光の透過光強度Ｉ。８３）および対照Ｒの光透過特性
（ここでは平行偏光の透通光強度ｒｏｌを検出するため
の検出器１４と、検出器１４に接続されており試料Ｍの
光透過特性（すなわち透過光強度工。、、）および対照
Ｒの光透過特性（すなわち透過光強度Ｉ。）から吸光度
特性を算出したのち試料Ｍの格子間酸素濃度を算出する
ための計算装置１５とを備えている。試料Ｍおよび対照
Ｒと検出器１４との間には、必要に応じ、反射鏡１６Ａ
、１６Ｂが挿入されている。ちなみに、マイケルソン干
渉計１２と偏光子１３との間には、必要に応じ、反射！
（図示せず）が挿入されていてもよい。The device is a measuring device for carrying out the method for measuring the interstitial oxygen concentration of a pulled silicon wafer according to the present invention, and includes a light source 11 such as a Grover lamp, and a semi-transparent mirror 12A that converts the light given from the light source 11. Divide into two movable mirrors 12B
and a Michelson interferometer 1 that forms interference light by reflecting it by a fixed mirror 12C and superimposing it.
2, and the parallel polarized light obtained by polarizing the light (i.e., interference light) given from the Michelson interferometer 12 is used for sample (here, a chemically polished pulled-up silicon wafer) M and control (here, a mirror-polished floating zone silicon wafer). ) The transmitted light intensity I of parallel polarized light is determined by the polarizer 13 for providing R and the light transmission characteristics of the sample M. 83) and the light transmission characteristics of the reference R (here, a detector 14 for detecting the transmitted light intensity rol of parallel polarized light, and the light transmission characteristics of the sample M connected to the detector 14 (i.e., the transmitted light intensity ) and a calculation device 15 for calculating the interstitial oxygen concentration of the sample M after calculating the absorbance characteristics from the light transmission characteristics (i.e., the transmitted light intensity I.) of the control R. A reflecting mirror 16A is provided between the reference R and the detector 14, if necessary.
, 16B are inserted. By the way, there is a reflection between the Michelson interferometer 12 and the polarizer 13 as necessary.
(not shown) may be inserted.
しかして、測定装置旦では、光源１１から与えられた光
からマイケルソン干渉計１２によって作成された干渉光
が、偏光子１３によって平行偏光とされたのち、試料Ｍ
および対照Ｒに与えられる。Therefore, in the measuring device, the interference light created by the Michelson interferometer 12 from the light given from the light source 11 is converted into parallel polarized light by the polarizer 13, and then the interference light is converted into parallel polarized light by the polarizer 13.
and control R.
試料Ｍおよび対照Ｒでは、その光学特性に応じて吸収な
らびに散乱が行なわれるので、検出器１４による検出結
果から計算装置１５によって算出された吸光度特性は、
第２図に示したごとき形状となる。Since the sample M and the control R absorb and scatter according to their optical properties, the absorbance properties calculated by the calculation device 15 from the detection results by the detector 14 are as follows.
The shape will be as shown in FIG.
計算装置１５は、第２図もしくはこれに相当する試料（
すなわち化学研磨引上シリコンウニ〜ハ）Ｍの光吸収係
数α。を
ａｌ ＝ ×
１．０４２ｄ
のごとく算出し、更に試料 （すなわち化学研磨引上シ
リコンウェーハ）Ｍの格子間酸素濃度［０１ｅｌを
のごとく算出する。The calculation device 15 calculates the sample shown in FIG. 2 or an equivalent sample (
That is, the optical absorption coefficient α of chemically polished pulled silicon urchin (c) M. is calculated as al = × 1.042d, and the interstitial oxygen concentration [0el of the sample (ie, chemically polished pulled silicon wafer) M is calculated as follows.
Ａ且体創工
加えて、本発明にかかる引上シリコンウェーハの格子間
酸素濃度測定方法の理解を促進する目的で、具体的な数
値などを挙げて説明する。In addition, for the purpose of promoting understanding of the method for measuring the interstitial oxygen concentration of pulled silicon wafers according to the present invention, specific numerical values will be given and explained.
罠皿皿上二Ｂ
引上シリコンウェーハは、まず、表裏両面が化学研磨さ
れかつ表裏両面がともに鏡面研磨されていない状態（す
なわち化学研磨引上シリコンウェーハの状態）で、本発
明にかかる格子間酸素濃度測定方法にしたがって格子間
酸素濃度［○、ｃｊが測定された（第１表参照）。Trap Plate Upper Part 2B The pulled silicon wafer is first chemically polished on both the front and back sides, and both the front and back sides are not polished to a mirror finish (that is, the state of the chemically polished pulled silicon wafer). The interstitial oxygen concentration [○, cj was measured according to the oxygen concentration measurement method (see Table 1).
そののち、引上シリコンウェーハは、表裏両面が鏡面研
磨され、この状態（すなわち鏡面研磨引上シリコンウェ
ーハの状態）で、本発明にかかる格子間酸素濃度測定方
法にしたがって格子間酸素濃度［Ｏ１ｃドが測定された
（第１表参照）。After that, the pulled silicon wafer is mirror-polished on both the front and back surfaces, and in this state (that is, the state of the mirror-polished pulled silicon wafer), the interstitial oxygen concentration [O1c was measured (see Table 1).
化学研磨引上シリコンウェーハについて測定された格子
間酸素濃度［○ＩｃＩ と鏡面研磨引上シリコンウェー
ハについて測定された格子間酸素濃度［０，ｅ］”とは
、それぞれを縦軸Ｙおよび横軸Ｘとするグラフ上にプロ
ットしたところ、第３図に示すとおり、直線Ｙ＝Ｘ上に
あって十分に一致していた。The interstitial oxygen concentration [○IcI] measured for chemically polished pulled silicon wafers and the interstitial oxygen concentration [0,e] measured for mirror polished pulled silicon wafers are expressed by the vertical axis Y and the horizontal axis X, respectively. When plotted on the graph shown in FIG. 3, it was found that they were on the straight line Y=X and were in good agreement.
これにより、本発明によれば、化学研磨引上シリコンウ
ェーハおよび鏡面研磨浮遊帯域シリコンウェーハをその
まま試料および対照として採用することにより、引上シ
リコンウェーハの格子間第１表
酸素濃度［０，ｅ］を直接に測定できることが判明した
。Therefore, according to the present invention, by directly adopting chemically polished pulled silicon wafers and mirror polished floating zone silicon wafers as samples and controls, the interstitial oxygen concentration [0,e] of pulled silicon wafers is It turns out that it is possible to measure directly.
」ｊ」」凱り
なお、上述では、マイケルソン干渉計１２を利用した場
合についてのみ説明したが、本発明は、これに限定され
るものではなく、マイケルソン干渉計に代え分光器を利
用する場合をも包摂している。"j""Although in the above description, only the case where the Michelson interferometer 12 is used has been explained, the present invention is not limited to this, and the present invention is not limited to this. It also includes cases.
（３）発明の効果
上述より明らかなように、本発明にかかる引上シリコン
ウェーハの格子間酸素濃度測定方法は、上述の［問題点
の解決手段］の欄に開示したごとく、表裏両面が化学研
磨された未鏡面研磨の引上シリコンウェーハの光透過特
性と表裏両面が鏡面研磨された浮遊帯域シリコンウェー
ハの光透過特性とから引上シリコンウェーハの格子間酸
素濃度を算出しているので、
（ｉ）表裏両面が鏡面研磨された浮遊帯域シリコンウェ
ーハを化学研磨することなく鏡面のままで使用可能とで
きる効果
を有し、ひいては
（１１）測定作業を簡潔とできる効果
を有し、更に
（ｉｉｉｌ測定精度を改善できる効果
を有する。(3) Effects of the Invention As is clear from the above, the method for measuring interstitial oxygen concentration of a pulled silicon wafer according to the present invention has a method for measuring the interstitial oxygen concentration of a pulled silicon wafer. Since the interstitial oxygen concentration of a pulled silicon wafer is calculated from the light transmission characteristics of a pulled silicon wafer that has been polished to an unmirrored surface and the light transmission characteristics of a floating zone silicon wafer whose front and back surfaces are mirror polished, ( i) It has the effect of allowing a floating zone silicon wafer whose front and back surfaces are mirror-polished to be used as it is without chemical polishing, and further has the effect of (11) simplifying the measurement work, and (iii) This has the effect of improving measurement accuracy.
第１図は本発明にかかる引上シリコンウェーハの格子間
酸素濃度測定方法の一実施例を実行するための装置を示
す簡略構成図、第２図および第３図は本発明にかかる引
上シリコンウェーハの格子間酸素濃度測定方法の一実施
例を説明するための説明図である。
１０・・・・・・・・・・・・格子間酸素濃度測定装置
１１・・・・・・・・ ・光源
１２・・・・・・・・・・・・・マイケルソン干渉計１
２Ａ・・・・・ ・・・半透明鏡
１２Ｂ・・・・・・・・・可動鏡
１２Ｃ・・・・・・・・・・固定鏡
Ｉ３・・・・・・・・・・・・偏光子
１４・・ ・・・・・・・検出器
１５ ・ ・・・・計算装置
１６Ａ、 １６Ｂ ・・・ 反射鏡
Ｍ ・・・・・−・・試料
Ｒ・・・ ・ ・・対照FIG. 1 is a simplified configuration diagram showing an apparatus for carrying out an embodiment of the method for measuring interstitial oxygen concentration in pulled silicon wafers according to the present invention, and FIGS. 2 and 3 are drawn silicon wafers according to the present invention. FIG. 2 is an explanatory diagram for explaining one embodiment of a method for measuring interstitial oxygen concentration in a wafer. 10...... Interstitial oxygen concentration measuring device 11... ・Light source 12... Michelson interferometer 1
2A......Semi-transparent mirror 12B...Movable mirror 12C...Fixed mirror I3... Polarizer 14... Detector 15... Calculating device 16A, 16B... Reflector M... Sample R...... Control
Claims (1)
コンウェーハに対し平行偏光 をブリュースター角で入射せしめること により引上シリコンウェーハの光透過特 性を測定するための第１の工程と、 （ｂ）表裏両面が鏡面研磨された対照としての浮遊帯域
シリコンウェーハに対し平行 偏光をブリュースター角で入射せしめる ことにより浮遊帯域シリコンウェーハの 光透過特性を測定するための第２の工程 と、 （ｃ）第１の工程によって測定された引上シリコンウェ
ーハの光透過特性と第２の工 程によって測定された浮遊帯域シリコン ウェーハの光透過特性とから引上シリコ ンウェーハの格子間酸素濃度を算出する ための第３の工程と を備えてなる引上シリコンウェーハの格子間酸素濃度測
定方法。[Claims] (a) For measuring the light transmission characteristics of a pulled silicon wafer by making parallel polarized light incident at the Brewster angle on a pulled silicon wafer that has been chemically polished on both the front and back surfaces and is not mirror polished. (b) a step for measuring the light transmission characteristics of a floating band silicon wafer by making parallel polarized light incident at the Brewster angle on a floating band silicon wafer as a control whose front and back surfaces are mirror-polished; (c) From the light transmission characteristics of the pulled silicon wafer measured in the first step and the light transmission characteristics of the floating zone silicon wafer measured in the second step, the lattice spacing of the pulled silicon wafer is determined. A method for measuring interstitial oxygen concentration in a pulled silicon wafer, comprising: a third step for calculating the oxygen concentration.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2224711A JP2855473B2 (en) | 1990-08-27 | 1990-08-27 | Method for measuring interstitial oxygen concentration of pulled silicon wafer |
| US07/738,043 US5287167A (en) | 1990-07-31 | 1991-07-31 | Method for measuring interstitial oxygen concentration |
| EP91112865A EP0469572B1 (en) | 1990-07-31 | 1991-07-31 | A method measuring interstitial oxygen concentration |
| DE69130245T DE69130245T2 (en) | 1990-07-31 | 1991-07-31 | Method of measuring interstitial oxygen concentration |
| KR1019910013266A KR0156939B1 (en) | 1990-07-31 | 1991-07-31 | Silicon wafer measuring method, silicon wafer manufacturing method, and oxygen concentration measurement between lattice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2224711A JP2855473B2 (en) | 1990-08-27 | 1990-08-27 | Method for measuring interstitial oxygen concentration of pulled silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04106947A true JPH04106947A (en) | 1992-04-08 |
| JP2855473B2 JP2855473B2 (en) | 1999-02-10 |
Family
ID=16818053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2224711A Expired - Fee Related JP2855473B2 (en) | 1990-07-31 | 1990-08-27 | Method for measuring interstitial oxygen concentration of pulled silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2855473B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5571934A (en) * | 1978-11-24 | 1980-05-30 | Hitachi Ltd | Method of evaluating impurity doping amount in semiconductor |
| JPS56154648A (en) * | 1980-04-30 | 1981-11-30 | Fujitsu Ltd | Measurement of semiconductor impurity concentration |
| JPS56160643A (en) * | 1980-05-16 | 1981-12-10 | Fujitsu Ltd | Measuring method for impurity concentration and distribution thereof |
| JPS6483135A (en) * | 1987-09-25 | 1989-03-28 | Hitachi Ltd | Measuring apparatus of polarized infrared ray for thin film |
| JPH01132935A (en) * | 1987-11-18 | 1989-05-25 | Kawasaki Steel Corp | Method and apparatus for analyzing film |
-
1990
- 1990-08-27 JP JP2224711A patent/JP2855473B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5571934A (en) * | 1978-11-24 | 1980-05-30 | Hitachi Ltd | Method of evaluating impurity doping amount in semiconductor |
| JPS56154648A (en) * | 1980-04-30 | 1981-11-30 | Fujitsu Ltd | Measurement of semiconductor impurity concentration |
| JPS56160643A (en) * | 1980-05-16 | 1981-12-10 | Fujitsu Ltd | Measuring method for impurity concentration and distribution thereof |
| JPS6483135A (en) * | 1987-09-25 | 1989-03-28 | Hitachi Ltd | Measuring apparatus of polarized infrared ray for thin film |
| JPH01132935A (en) * | 1987-11-18 | 1989-05-25 | Kawasaki Steel Corp | Method and apparatus for analyzing film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2855473B2 (en) | 1999-02-10 |
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