JPH04108852A - Epoxy resin composition for sealing semiconductor and semiconductor device sealed with the same composition - Google Patents
Epoxy resin composition for sealing semiconductor and semiconductor device sealed with the same compositionInfo
- Publication number
- JPH04108852A JPH04108852A JP22629990A JP22629990A JPH04108852A JP H04108852 A JPH04108852 A JP H04108852A JP 22629990 A JP22629990 A JP 22629990A JP 22629990 A JP22629990 A JP 22629990A JP H04108852 A JPH04108852 A JP H04108852A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- formulas
- formula
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 64
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000203 mixture Substances 0.000 title claims abstract description 33
- 238000007789 sealing Methods 0.000 title description 7
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 6
- 239000011256 inorganic filler Substances 0.000 claims abstract description 3
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 3
- 238000005538 encapsulation Methods 0.000 claims description 16
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229920003986 novolac Polymers 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は接着性に優れた半導体封止用エポキシ樹脂組
成物及びその組成物で封止した半導体装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an epoxy resin composition for semiconductor encapsulation with excellent adhesive properties and a semiconductor device encapsulated with the composition.
２、 シリコーン系可撓化剤を０．０５〜０．５重量％
含有してなる請求項１記載の半導体封止用エポキシ樹脂
組成物。2. 0.05-0.5% by weight of silicone flexibilizer
The epoxy resin composition for semiconductor encapsulation according to claim 1, comprising:
ＩＣ，ＬＳＩ等の半導体素子は、プラスチックパッケー
ジを用いた樹脂封止が主流となっている。Semiconductor elements such as ICs and LSIs are mainly encapsulated with resin using plastic packages.
この種の樹脂封止には、従来からエポキシ樹脂組成物が
使用されており良好な成績を収めている。Epoxy resin compositions have been used for this type of resin sealing and have achieved good results.
しかしながら半導体分野の技術革新によって集積度の向
上とともに、素子サイズの大型化、パッケージの小型化
、薄型化が進み、パッケージを基板へ取りつける方法も
表面実装化する傾向にある。However, technological innovations in the semiconductor field have led to improvements in the degree of integration, as well as larger device sizes, smaller and thinner packages, and there is a trend towards surface mounting as the method for attaching packages to substrates.
特に表面実装型の薄型パッケージにおいては基板への半
田付は時にパッケージ全体が極めて短時間のうちに２０
０°Ｃ以上の高温にさらされるため、この時パッケージ
が吸湿していると封止樹脂中の水分による蒸気圧によっ
て、パッケージと素子、インナーリードとの界面での剥
離やパッケージにクランクが生じてしまう問題が発生し
ている。このクランクは、特にタブ裏面より発生するも
のが多く、タブ裏面と封止用樹脂の間の接着性を向上さ
せるためにタブ裏面のデインプル加工、スリット加工等
の手法が取られているものもあるが、リードフレームの
高コスト化、効果が不充分である等の問題があり、封止
用樹脂を改善することにより問題点を改良することが望
まれている。Particularly in the case of thin surface-mount packages, soldering to the board sometimes requires the entire package to be soldered in a very short time.
Since the package is exposed to high temperatures of 0°C or higher, if the package absorbs moisture at this time, the vapor pressure caused by the moisture in the sealing resin may cause peeling or cracking of the package at the interface between the package, element, and inner leads. A problem is occurring. This crank occurs particularly on the back of the tab, and some methods include dimples, slits, etc. on the back of the tab to improve the adhesion between the back of the tab and the sealing resin. However, there are problems such as high cost of the lead frame and insufficient effects, and it is desired to improve the problems by improving the sealing resin.
これまでの半導体封止用エポキシ樹脂組成物では、パッ
ケージのインサートとの接着力が不足しており、接着力
を向上させるには、添加剤の一つである離型剤の種類、
量を変更する方法等が取られてきたが、いまひとつ満足
のい（ものではなく、より一層の向上が求められている
。Conventional epoxy resin compositions for semiconductor encapsulation lack adhesive strength with package inserts, and in order to improve adhesive strength, the type of mold release agent, which is one of the additives,
Methods such as changing the amount have been taken, but they are still unsatisfactory, and further improvements are needed.
この発明は、このような要求に対し、樹脂封止に用いる
エポキシ樹脂組成物において、その接着力を上げること
によりパッケージインサートとの間で界面剥離の発生を
抑制し、吸湿後の耐半田クラック性に優れた半導体装置
を提供することをその目的とするものである。In response to these demands, this invention suppresses the occurrence of interfacial peeling between the epoxy resin composition used for resin sealing and the package insert by increasing its adhesive strength, and improves solder crack resistance after moisture absorption. The purpose is to provide an excellent semiconductor device.
本発明者らは、上記の目的を達成するため鋭意研究を行
った結果、特定なエポキシ樹脂を含有するエポキシ樹脂
組成物が接着性に優れていることを見出し、この知見に
基づいて本発明を完成するに至った。As a result of intensive research to achieve the above object, the present inventors discovered that an epoxy resin composition containing a specific epoxy resin has excellent adhesive properties, and based on this knowledge, the present invention was developed. It was completed.
すなわち、本発明はエポキシ樹脂成分と硬化剤を含有す
る半導体封止用エポキシ樹脂組成物において、エポキシ
樹脂成分が次に示す（Ａ）〜（Ｇ）のエポキシ樹脂の少
なくとも１つをエポキシ樹脂成分の５〜９０重量％の比
率で含有してなる半導体封止用エポキシ樹脂組成物及び
この樹脂組成物により封止された半導体装置を提供する
ものである。That is, the present invention provides an epoxy resin composition for semiconductor encapsulation containing an epoxy resin component and a curing agent, in which the epoxy resin component contains at least one of the following epoxy resins (A) to (G). The object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation containing the present invention in a proportion of 5 to 90% by weight, and a semiconductor device encapsulated with this resin composition.
（Ａ）式〔Ｉ〕で示されるエポキシ樹脂（Ｃ）式（ＩＩ
Ｉ）で示されるエポキシ樹脂（Ｄ）式（ＩＶ）で示され
るエポキシ樹脂（Ｅ）式〔Ｖ〕で示されるエポキシ樹脂
（上記ＣＩ）においてＲは水素基、メチル基、ｎは０〜
３の整数である。）
（Ｂ）式（ｎ）で示されるエポキシ樹脂（Ｆ）式（Ｖｌ
）で示されるエポキシ樹脂（Ｇ）式〔■〕で示されるエ
ポキシ樹脂上記エポキシ樹脂には通常の半導体封止用エ
ポキシ樹脂組成物に用いられるエポキシ樹脂を併用する
ことができる。この併用されるエポキシ樹脂は１分子中
に２個以上のエポキシ基を有するエポキシ化合物であれ
ば特に制限するものではないが、従来から半導体装置の
封止樹脂として用いられている０−クレゾールノボラッ
ク型エポキシ樹脂又はフェノールノボラック型エポキシ
樹脂が好適である。(A) Epoxy resin represented by formula [I] (C) Formula (II)
I) Epoxy resin represented by (D) Epoxy resin represented by formula (IV) (E) In epoxy resin represented by formula [V] (CI above), R is a hydrogen group, a methyl group, and n is 0 to
It is an integer of 3. ) (B) Epoxy resin represented by formula (n) (F) Formula (Vl
) Epoxy resin represented by formula (G) Epoxy resin represented by formula [■] The above-mentioned epoxy resin can be used in combination with an epoxy resin used in ordinary epoxy resin compositions for semiconductor encapsulation. The epoxy resin used in combination is not particularly limited as long as it is an epoxy compound having two or more epoxy groups in one molecule, but the epoxy resin used in combination is an 0-cresol novolac type, which has traditionally been used as a sealing resin for semiconductor devices. Epoxy resins or phenol novolak type epoxy resins are preferred.
上記（Ａ）〜（Ｇ）で示されるエポキシ樹脂はエポキシ
樹脂成分の５〜９０重量％、好ましくは１０−＋８５重
量％の比率で用いられる。前記エポキシ樹脂の含有量が
５重量％未満ではインサートとの接着力の改善効果は期
待できない。The epoxy resins represented by (A) to (G) above are used in a proportion of 5 to 90% by weight, preferably 10-+85% by weight of the epoxy resin component. If the content of the epoxy resin is less than 5% by weight, no improvement in adhesive strength with the insert can be expected.
エポキシ樹脂とともに用いられる硬化剤としては、フェ
ノールノボラック樹脂、タレゾールノボラック樹脂等が
挙げられる。Examples of the curing agent used with the epoxy resin include phenol novolak resin, talesol novolak resin, and the like.
また、この発明では上記エポキシ樹脂、硬化剤成分のほ
かに必要に応じて硬化促進剤、無機充填剤、離型剤等を
加えることができる。硬化促進剤としては、エポキシ樹
脂と硬化剤の硬化反応触媒となるものの全てが使用可能
であり、硬化剤がフェノールノボラック樹脂の場合トリ
フェニルホスフィン等の有機ホスフィン等を挙げること
ができる。Further, in the present invention, in addition to the above-mentioned epoxy resin and curing agent components, a curing accelerator, an inorganic filler, a mold release agent, etc. can be added as necessary. As the curing accelerator, any catalyst that acts as a curing reaction catalyst between the epoxy resin and the curing agent can be used, and when the curing agent is a phenol novolak resin, organic phosphines such as triphenylphosphine can be used.
充填剤としはシリカ粉、石英ガラス粉、アルミナ等を用
いることができる。充填剤の好ましい含有量はエポキシ
樹脂組成物に対して３０〜９０重量％である。Silica powder, quartz glass powder, alumina, etc. can be used as the filler. The preferred content of the filler is 30 to 90% by weight based on the epoxy resin composition.
更にカップリング剤、難燃剤、着色剤、シリコーン系可
撓化剤等の添加剤を添加することができる。シリコーン
系可撓化剤の好ましい含有量はエポキシ樹脂組成物０．
０５〜０．５重量％である。このシリコーン系可撓側は
エポキシ樹脂の熱膨張率を小さくすることによりクラン
クの発生をおさえるために添加される。Furthermore, additives such as coupling agents, flame retardants, colorants, and silicone-based flexibilizers can be added. The preferred content of the silicone flexibilizing agent is 0.00% in the epoxy resin composition.
05 to 0.5% by weight. This silicone-based flexible side is added to suppress the occurrence of cranks by reducing the coefficient of thermal expansion of the epoxy resin.
この発明に用いるエポキシ樹脂組成物は上記原料を各々
適宜配合し、この配合物をミキシングロール機等の混練
機にかけ混練して半硬化状の樹脂組成物とし、これを室
温に冷却したのち公知の手段によって粉砕し、必要に応
じて打錠するという一連の工程により目的とする半導体
封止用エポキシ樹脂組成物を得ることができる。The epoxy resin composition used in this invention is prepared by appropriately blending the above-mentioned raw materials, kneading this mixture in a kneading machine such as a mixing roll machine to obtain a semi-cured resin composition, and cooling it to room temperature. The desired epoxy resin composition for semiconductor encapsulation can be obtained through a series of steps of pulverizing by a means and tableting if necessary.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は特に限定するものではなく通常の方法、例えばト
ランスファ成形等の公知の成形方法によって行うことが
できるが、この時金型に離型を促す機構、例えばエジェ
クタービン等の機構を有しているものが望ましい。The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited and can be carried out by a conventional method, for example, a known molding method such as transfer molding. It is desirable to have a mechanism that promotes this, such as an ejector turbine.
このようにして得られる半導体装置は、インサートと封
止材料の界面における接着性が極めて優れており、半導
体装置の吸湿半田時の水蒸気圧によっても界面剥離を生
じにくく、ゆえに吸湿半田時の耐クラツク性に優れてい
る。The semiconductor device obtained in this manner has extremely excellent adhesion at the interface between the insert and the sealing material, and is resistant to interfacial delamination even due to water vapor pressure during moisture absorption soldering of the semiconductor device, and therefore has excellent crack resistance during moisture absorption soldering. Excellent in sex.
以下、本発明を実施例に基づいて詳細に説明するが、本
発明はこれに限定されるものではない。Hereinafter, the present invention will be explained in detail based on Examples, but the present invention is not limited thereto.
実施例１〜８、比較例１
まず第１表に示す各種の原料を用い半導体封止用エポキ
シ樹脂組成物を作製した。各原料を予備混合（トライブ
レンド）した後、二軸ロール（ロール表面温度約８０°
Ｃ）で約１０分間混練し、冷却後粉砕機で微粒化し半導
体封止用エポキシ樹脂組成物を得た。Examples 1 to 8, Comparative Example 1 First, epoxy resin compositions for semiconductor encapsulation were prepared using various raw materials shown in Table 1. After pre-mixing each raw material (tri-blend), roll it on a twin-screw roll (roll surface temperature approx. 80°).
C) for about 10 minutes, and after cooling, the mixture was pulverized using a pulverizer to obtain an epoxy resin composition for semiconductor encapsulation.
このエポキシ樹脂組成物を用い、トランスファプレスで
厚さ約０．０３ ｍｍのアルミホイル上に幅約１ ｃｍ
の成形品を１７５°Ｃ，７０ｋｇ／ｃｉ、５分間の条件
で成形し、１７５°Ｃ１６時間のアフタキュアを行った
。Using this epoxy resin composition, apply a layer of approximately 1 cm width onto aluminum foil approximately 0.03 mm thick using a transfer press.
The molded product was molded at 175°C, 70kg/ci, for 5 minutes, and after-cured at 175°C for 16 hours.
上記成形品のアルミホイルをビール試験することによっ
て、アルミニウム接着力を求めた。その結果を第２表に
示す。Aluminum adhesion strength was determined by subjecting the aluminum foil of the above molded product to a beer test. The results are shown in Table 2.
また、このエポキシ樹脂組成物を用いて半導体素子をト
ランスファプレスで同様に成形しアフタキュア後半導体
装置を得た。Further, a semiconductor element was similarly molded using this epoxy resin composition using a transfer press to obtain a semiconductor device after after-curing.
この半導体装置は、５４ピンＱＦＰのパッケージ（２０
Ｘ１４ｍｍ、厚さ２ｍｍ）であり、６ Ｘ ６ ｍｍの
チップサイズを有するものである。This semiconductor device is a 54-pin QFP package (20
x 14 mm, thickness 2 mm), and has a chip size of 6 x 6 mm.
このようにして得られた半導体装置について、８５°Ｃ
１８５％ＲＨでの吸湿後２１５°Ｃ１９０秒の処理を行
った時のパッケージクラック発生率を求めた。その結果
を第２表に示す。The semiconductor device obtained in this way was heated at 85°C.
After moisture absorption at 185% RH, the package crack occurrence rate was determined when processing was performed at 215° C. for 190 seconds. The results are shown in Table 2.
第１図は従来のエポキシ樹脂組成物（比較例１）で封止
された半導体装置のアフタキュア後での略断面図、第２
図は第１図の半導体装置の吸湿後半田リフローによりパ
ッケージクラックを生じた状態の略断面図である。図中
１．はタブ、２．はチップ、３．はリードフレーム、４
．はワイヤー、５゜樹脂を表し、タブ裏面と樹脂とは６
．のように剥離しており、半田リフロー後７．８．
のクランクが生じている。Figure 1 is a schematic cross-sectional view of a semiconductor device sealed with a conventional epoxy resin composition (Comparative Example 1) after after-curing;
This figure is a schematic cross-sectional view of the semiconductor device of FIG. 1 in which package cracks have occurred due to moisture absorption and solder reflow. 1 in the figure. is a tab, 2. is a chip, 3. is lead frame, 4
．． represents wire and 5° resin, and the back side of the tab and resin are 6°
．． It has peeled off as shown in 7.8 after solder reflow.
A crank is occurring.
本発明の半導体封止用樹脂組成物は接着性に優れ、これ
を用いて封止された半導体装置は吸湿後の半田クラック
性に優れている。The resin composition for semiconductor encapsulation of the present invention has excellent adhesive properties, and a semiconductor device encapsulated using the same has excellent solder cracking properties after absorbing moisture.
第１図は従来のエポキシ樹脂組成物で封止された半導体
装置のアフタキュア後での略断面図、第２図は第１図の
半導体装置の吸湿後半口リフローによりパッケージクラ
ックを生じた状態の略断面図である。
符号の説明
１、タブ ２．チップ
３、 リードフレーム ４． ワイヤー５、樹脂
６、 タブ裏面と樹脂との剥離
７．８． クランクFig. 1 is a schematic cross-sectional view of a semiconductor device sealed with a conventional epoxy resin composition after after-curing, and Fig. 2 is a schematic cross-sectional view of the semiconductor device shown in Fig. 1 in which package cracks have occurred due to moisture absorption and reflow at the rear half of the semiconductor device. FIG. Explanation of symbols 1, tabs 2. Chip 3, lead frame 4. Wire 5, resin 6, peeling between the back of the tab and the resin 7.8. crank
Claims (1)
エポキシ樹脂組成物において、エポキシ樹脂成分が次に
示す（Ａ）〜（Ｇ）のエポキシ樹脂の少なくとも１つを
エポキシ樹脂成分の５〜９０重量％の比率で含有してな
る半導体封止用エポキシ樹脂組成物。 （Ａ）式〔 I 〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔 I 〕 （上記〔 I 〕においてＲは水素又はメチル基、ｎは０
〜３の整数である。） （Ｂ）式〔II〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔II〕 （Ｃ）式〔III〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔III〕 （Ｄ）式〔IV〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔IV〕 （Ｅ）式〔Ｖ〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔Ｖ〕 （Ｆ）式〔VI〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔VI〕 （Ｇ）式〔VII〕で示されるエポキシ樹脂 ▲数式、化学式、表等があります▼〔VII〕 ２、シリコーン系可撓化剤を０．０５〜０．５重量％含
有してなる請求項１記載の半導体封止用エポキシ樹脂組
成物。 ３、無機質充填剤を３０〜９０重量％含有してなる請求
項１又は２記載の半導体封止用エポキシ樹脂組成物。 ４、請求項１、２又は３記載の半導体封止用エポキシ樹
脂組成物で封止された半導体装置。[Scope of Claims] 1. In an epoxy resin composition for semiconductor encapsulation containing an epoxy resin component and a curing agent, the epoxy resin component contains at least one of the following epoxy resins (A) to (G). An epoxy resin composition for semiconductor encapsulation comprising a resin component in a proportion of 5 to 90% by weight. (A) Epoxy resin represented by the formula [I]▲There are mathematical formulas, chemical formulas, tables, etc.▼[I] (In [I] above, R is hydrogen or methyl group, n is 0
It is an integer of ~3. ) (B) Epoxy resin represented by formula [II] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [II] (C) Epoxy resin represented by formula [III] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [III ] (D) Epoxy resin represented by formula [IV] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [IV] Epoxy resin represented by (E) Formula [V] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [V ] (F) Epoxy resin represented by formula [VI] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [VI] (G) Epoxy resin represented by formula [VII] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [VII 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, which contains 0.05 to 0.5% by weight of a silicone flexibilizing agent. 3. The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, which contains 30 to 90% by weight of an inorganic filler. 4. A semiconductor device encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1, 2 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22629990A JPH04108852A (en) | 1990-08-28 | 1990-08-28 | Epoxy resin composition for sealing semiconductor and semiconductor device sealed with the same composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22629990A JPH04108852A (en) | 1990-08-28 | 1990-08-28 | Epoxy resin composition for sealing semiconductor and semiconductor device sealed with the same composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04108852A true JPH04108852A (en) | 1992-04-09 |
Family
ID=16843037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22629990A Pending JPH04108852A (en) | 1990-08-28 | 1990-08-28 | Epoxy resin composition for sealing semiconductor and semiconductor device sealed with the same composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04108852A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09289270A (en) * | 1996-04-19 | 1997-11-04 | Sanken Electric Co Ltd | Semiconductor device |
| JP2003055439A (en) * | 2001-08-16 | 2003-02-26 | Shin Etsu Chem Co Ltd | Liquid epoxy resin composition and semiconductor device using the same |
| US6555602B1 (en) * | 1999-10-06 | 2003-04-29 | Nitto Denko Corporation | Composition of epoxy resin, anhydride and microcapsule accelerator |
-
1990
- 1990-08-28 JP JP22629990A patent/JPH04108852A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09289270A (en) * | 1996-04-19 | 1997-11-04 | Sanken Electric Co Ltd | Semiconductor device |
| US6555602B1 (en) * | 1999-10-06 | 2003-04-29 | Nitto Denko Corporation | Composition of epoxy resin, anhydride and microcapsule accelerator |
| JP2003055439A (en) * | 2001-08-16 | 2003-02-26 | Shin Etsu Chem Co Ltd | Liquid epoxy resin composition and semiconductor device using the same |
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