JPH04110429A - High strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder - Google Patents

High strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder

Info

Publication number
JPH04110429A
JPH04110429A JP22836890A JP22836890A JPH04110429A JP H04110429 A JPH04110429 A JP H04110429A JP 22836890 A JP22836890 A JP 22836890A JP 22836890 A JP22836890 A JP 22836890A JP H04110429 A JPH04110429 A JP H04110429A
Authority
JP
Japan
Prior art keywords
solder
copper alloy
less
alloy
conductivity copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22836890A
Other languages
Japanese (ja)
Inventor
Hiroaki Watanabe
宏昭 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Nikko Kyodo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd, Nikko Kyodo Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP22836890A priority Critical patent/JPH04110429A/en
Publication of JPH04110429A publication Critical patent/JPH04110429A/en
Pending legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture a high strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder by incorporating specified ratios of Cr, Sn and Mn into Cu and preparing a copper alloy. CONSTITUTION:A high strength and high conductivity copper alloy for electronic equipment contg., by weight, 0.2 to 1.0% Cr, >0.2 to 1.0% Sn and >0.1 to 0.8% Mn, or furthermore, as auxiliary components, contg. total 0.01 to 2.0% of one or >= two kinds selected from the group consisting of Ag, Al, As, B, Be, Fe, Ge, Hf, In, Mo, Ni, Pb, Sb and V and the balance Cu with inevitable impurities and excellent in thermal peeling resistance of solder is prepd. More over, in this alloy, the content of 0 is preferably limited to <=30ppm and the content of S to <=20ppm.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体集積回路(IC)のリードフレーム4
]及び端子、コネクター リレー、スイッチ等の導電性
はね利に適する特に半田耐熱剥離性(ここで言う半田耐
熱剥離性とは半田付けもしくは半田めっきを施した材料
が熱等の影響に対して耐剥離効果を有する性質を意味す
る。)に優れた高力高導電銅合金に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a lead frame 4 of a semiconductor integrated circuit (IC).
] and terminals, connectors, relays, switches, etc. Particularly suitable for conductive applications such as solder heat and peel resistance (here, solder heat and peel resistance refers to the resistance of soldered or solder plated materials to the effects of heat, etc.) This relates to a high-strength, high-conductivity copper alloy that has excellent properties (meaning the property of having a peeling effect).

[従来の技術1 従来、半導体集積回路のリードフレーム材としては、熱
膨張係数が低く、素子及びセラミックとの接着及び封着
性の良好なコバール(Pe29Ni−16Co) 、4
2合金(Fe−42Nj)などの高ニッケル合金が好ん
で使われてきた。しかし、近年、半導体回路の集積度の
向上に伴い消費電力の高いICが多くなってきたことと
、封市制料として樹脂か多く使用され、かつ素子とリー
ドフレームの接着も改良が加えられたことにより、使用
されるリードフレーム刊も放熱性のよい銅基合金が使わ
れるようになってきた。
[Prior art 1] Kovar (Pe29Ni-16Co), which has a low coefficient of thermal expansion and good adhesion and sealing properties with elements and ceramics, has conventionally been used as a lead frame material for semiconductor integrated circuits.
High nickel alloys such as Fe-42Nj (Fe-42Nj) have been preferred. However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased, resins are increasingly used as sealing materials, and improvements have been made to the bonding of elements and lead frames. As a result, copper-based alloys with good heat dissipation properties have come to be used for the lead frames used.

一般に半導体集積回路のリードフレーム制としては以下
のような特性が要求されている。
In general, lead frame systems for semiconductor integrated circuits are required to have the following characteristics.

(1)リードフレームか電気信号伝達部であるとともに
、パッケージング工程中及び回路使用中に発生する熱を
外部に放出する機能を併せ持つことを要求されるため、
優れた熱及び電気伝導性を示すこと。
(1) In addition to being a lead frame or electrical signal transmission part, it is also required to have the function of discharging heat generated during the packaging process and circuit use to the outside.
Exhibiting excellent thermal and electrical conductivity.

(2)リードフレ−ムとモールドとの密着性か半導体素
子保護の観点から重要であるため、リードフレーム材と
モールド材の熱膨張係数が近いこと。
(2) Since the adhesion between the lead frame and the mold is important from the viewpoint of protecting the semiconductor element, the thermal expansion coefficients of the lead frame material and the mold material should be similar.

(3)パッケージング時に種々の加熱工程が加わるため
、耐熱性が良好であること。
(3) It must have good heat resistance since various heating processes are involved during packaging.

(4)リードフレームはリードフレ−ム材を抜き打ち加
工し、又、曲げ加工して作製されるものがほとんどであ
るため、これらの加工性が良好なこと。
(4) Most lead frames are manufactured by punching or bending lead frame materials, so the workability of these materials is good.

(5)リードフレームは表]荀に貴金属のめっきを行う
ため、これら貴金属とのめっき密着性が良好であること
(5) Since the front side of the lead frame is plated with precious metals, the plating adhesion to these precious metals must be good.

(6)パッケージング後に封止4邪の外に露出している
、いわゆるアウター・リード部に半EEI付けするもの
か多いので良好な半田付は性を示すこと。
(6) Good soldering is necessary because semi-EEI is often attached to the so-called outer lead portion, which is exposed outside the seal after packaging.

(7)機器の信頼性及び寿命の観点から耐食性が良好な
こと。
(7) Good corrosion resistance from the standpoint of equipment reliability and lifespan.

(8)価格か低順であること。(8) Sort by price or lowest.

これらの各種要求特性に対し、従来より使用されている
無酸素銅、錫入り銅、りん青銅、コバール、42合金は
一長一短があり、これらの特性を全て満足するものでは
ない。一方、CLICr−8n系合金は、上記の要求特
性をがなり満足するため、C1,+ −Cr−8n系合
金に若干の添加元素を加えた改良合金か開発されてき[
発明か解決しようとする課題] 近年半導体に対する信頼度の要求がより厳しくなるとと
もに、小型化に対応した面付実装タイプか多くなってき
たため、従来問題とされていなかった半田耐熱剥離性が
非常に重要な特性項ローとなってきた。
Oxygen-free copper, tin-containing copper, phosphor bronze, Kovar, and 42 alloy, which have been conventionally used, have advantages and disadvantages with respect to these various required properties, and do not satisfy all of these properties. On the other hand, CLICr-8n alloys have been developed as improved alloys by adding some additive elements to C1,+ -Cr-8n alloys in order to fully satisfy the above-mentioned required properties.
[Invention or Problem to be Solved] In recent years, reliability requirements for semiconductors have become more stringent, and surface mounting types that correspond to miniaturization have become more popular. It has become an important characteristic term.

すなわち、リードフレームとプリント基板とか半rn 
(=Iけをされるが、使用中外的温度及び通電による発
熱により最高120 ’C程度までリードフレーム及び
半田イτ]け部が温度上昇する。このような温度に長時
間さらされると半田とリードフレームとの剥離が生じ、
半導体が動作しないことか起りえるため、寿命という観
点から高信頼度か要求される場合、この半田耐熱剥離性
は最も重要な特性の1つとなる。とりわけ、P P P
(I’1.AT  P1.ASTICPACKAGE)
  や PCLL  (、PLASTIC+、1>AI
)Fシt) CHIP CAI?Ii’1ER)に代表
される面付タイプはプリント基板に装入するのではなく
、面接触になるため、より半r[+耐熱剥離性か重要に
なってくる。
In other words, lead frame and printed circuit board etc.
During use, the temperature of the lead frame and solder joint increases up to about 120'C due to external temperatures and heat generated by electricity.If exposed to such temperatures for a long time, the solder and Peeling from the lead frame occurs,
Since it is possible for a semiconductor to malfunction, if high reliability is required from the viewpoint of longevity, this solder heat peeling resistance is one of the most important characteristics. Among others, P P P
(I'1.AT P1.ASTICPACKAGE)
or PCLL (, PLASTIC+, 1>AI
) F shit) CHIP CAI? The surface-mounting type represented by Ii'1ER) is not inserted into the printed circuit board, but is surface-contacted, so half r [+ heat-resistant peelability is more important.

又、従来、端子、コネクター リレー、スイッチ等の導
電性ばね材としては、安価な黄銅、優れたばね特性及び
耐食性を有する洋白あるいは優れたばね特性を有するり
ん青銅か使用されていた。しかし黄銅は、強度、ばね特
性か劣っており、又、強度、ばね特性の優れた洋白、り
ん青銅も、洋白は多量のN1、りん青銅は多量のSnを
含むため、原料の面及び製造」二熱間加工性か悪い等の
加工上の制約も加わり、高価な合金である。更には、電
気機器用等に用いられる場合、導電率が低いという欠点
を有している。
In addition, conventionally, as conductive spring materials for terminals, connector relays, switches, etc., inexpensive brass, nickel silver with excellent spring properties and corrosion resistance, or phosphor bronze with excellent spring properties have been used. However, brass is inferior in strength and spring properties, and nickel silver and phosphor bronze, which have excellent strength and spring properties, have a large amount of N1 in nickel silver and a large amount of Sn in phosphor bronze. Manufacturing: It is an expensive alloy due to processing constraints such as poor hot workability. Furthermore, when used for electrical equipment, etc., it has the disadvantage of low electrical conductivity.

したがって、導電性が良好であり、強度、ばね特性に優
れた安価な合金の出現か待たれていた。
Therefore, the emergence of an inexpensive alloy with good conductivity, strength, and spring properties has been awaited.

この導電性ばね材の分野でも、Cu−CrSn系合金か
かなりの要求特性を満足することから、Cu−Cr−8
n系合金に若干の添加元素を加えた改良合金か開発され
てきた。しかし、半導体集積回路のリードフレーム材と
同様に導電性ばね材においても、接触抵抗低減、耐食性
の向上等の理由で、Sn又は半田めっきが施されること
が多いため、先に述べたような半[l耐熱剥離性が近年
の信頼性向」二の要求から極めて重要となってきている
。このような半田耐熱剥離性の厳しい要求に対(7、現
状までに開発されたC Ll −Cr−8n系合金では
満足することができず、半田耐熱剥離性を改善した高力
高導電銅合金の山現か待たれていた。
In the field of conductive spring materials, Cu-Cr-8
Improved alloys have been developed by adding some additive elements to n-based alloys. However, like lead frame materials for semiconductor integrated circuits, conductive spring materials are often coated with Sn or solder to reduce contact resistance and improve corrosion resistance. Heat-resistant peelability has become extremely important due to recent demands for reliability. In order to meet these strict requirements for heat-soldering and peeling properties (7), the C Ll -Cr-8n alloys developed to date cannot meet these requirements, so we developed a high-strength, high-conductivity copper alloy with improved heat-soldering and peeling properties. Yamagenka was awaited.

[課題を解決するための手段] 本発明は、かかる課題を解決するためになされたもので
、従来の銅基合金の欠点を改良し、半導体集積回路(I
C)のリードフレーム祠及び端子、コネクター リレー
、スイッチ等の導′准性ばね材とj7て好適な緒特性を
有する銅合金を提供しようとするものである。
[Means for Solving the Problems] The present invention has been made to solve the problems, and improves the drawbacks of conventional copper-based alloys, and improves semiconductor integrated circuits (I
C) It is an object of the present invention to provide a copper alloy having suitable properties for use with conductive spring materials for lead frames, terminals, connectors, relays, switches, etc.

すなわち、本発明はCr :  0.2vt%を超え]
、0w1%以下、S n :  0.2w1.%を超え
、1.Ovt%以下、Mn +  0.1wt%を超え
0.8wt%以下を含み、あるいは更に副成分としてA
g5A1.As、 B、 Be、 Fe5Ge、 Hf
、旨、Mo、Ni、pb、sb、vからなる群より選択
された]種又は2種以上を総量で0.0]〜2.0wt
%含み、残部Cu及び不可避不純物からなることを特徴
とする半田耐熱剥離性に優れた電子機器用高力高導電銅
合金である。かかる合金は0含有量が30ppm以下、
S含有量か20ppm以下に制限するとよい。
That is, in the present invention, Cr: exceeding 0.2vt%]
, 0w1% or less, S n : 0.2w1. % or more, 1. Ovt% or less, Mn + more than 0.1wt% and 0.8wt% or less, or further contains A as a subcomponent.
g5A1. As, B, Be, Fe5Ge, Hf
, Mo, Ni, pb, sb, v] species or two or more species in a total amount of 0.0 to 2.0wt
This is a high-strength, high-conductivity copper alloy for electronic devices that has excellent solder heat resistance and peelability, and is characterized by containing % Cu and unavoidable impurities. Such an alloy has a zero content of 30 ppm or less,
It is preferable to limit the S content to 20 ppm or less.

次に本発明合金を構成する合金成分の限定理由を説明す
る。
Next, the reason for limiting the alloy components constituting the alloy of the present invention will be explained.

Crは時効処理を行うことにより母料中に金属Crを析
出させ、強度及び耐熱性を向」ニさせるために添加する
もので、その含有量を0.2vt%を超え l 、 0
w1%以下とするのは、0.2wt%以下では前述の効
果が期待できず、逆に 1.Owt%を超えると著しい
導電性、曲げ性、半[ロイマ]け性及びめっき密着性か
劣化するためである。
Cr is added to precipitate metal Cr in the base material through aging treatment to improve strength and heat resistance.
The reason for setting w1% or less is that if it is less than 0.2wt%, the above-mentioned effect cannot be expected; on the contrary, 1. This is because if it exceeds Owt%, the conductivity, bendability, semi-porous properties, and plating adhesion will deteriorate significantly.

Snは強度及び耐熱性を向上させるために添加するもの
で、その含有量を 0 、2vi%を超え1.0w1%
以下とするのは、0.2wt%以下では前述の効果が期
待できす、又、1.Owt%を超えると著しい導電性の
低下が起るためである。
Sn is added to improve strength and heat resistance, and its content should be 0.0, exceeding 2vi% and 1.0w1%.
The following is 0.2wt% or less, the above effect can be expected, and 1. This is because if the content exceeds Owt%, a significant decrease in conductivity occurs.

Mnは、Cu−Cr−Sn合金に関し、半田耐熱剥離性
を改善させる効果が期待できるため添加するもので、そ
の含有量を0.1wt%を超え、0、lh1%以下とす
るのは、0.]、wt%以下では前述の効果が期待でき
す、又、0.8wt%を超えると著しい導電性の低下か
起るためである。
Mn is added because it can be expected to have the effect of improving the solder heat resistance and peelability of Cu-Cr-Sn alloys. .. ], wt% or less, the above-mentioned effect can be expected, and if it exceeds 0.8 wt%, a significant decrease in conductivity occurs.

副成分として、Ag、Al5As、B5Be。Ag, Al5As, B5Be as subcomponents.

Fe、Ge、Hf、In、MoXNi、Pb1sb、v
からなる群より選択されたコ種又は2柱上」二を総量で
0.01〜2.Owt%添加する理由は、導電性を大き
く低下させずに強度を向上させる効果か期待できるため
で、添加量が総量で0.01w1未満では前述の効果か
期待できず、逆に2.0wし%を超えると著しい導電性
及び加工性の劣化か起るためである。
Fe, Ge, Hf, In, MoXNi, Pb1sb, v
A total amount of 0.01 to 2. The reason for adding Owt% is that it can be expected to have an effect of improving the strength without significantly reducing the conductivity.If the total amount added is less than 0.01w1, the above effect cannot be expected; This is because if it exceeds %, significant deterioration of conductivity and workability will occur.

O及びSの含有量をそれぞれ30ppm以下、2゜ρp
m以下とした理由は、○含有量が30ppmを、又、S
含有量が20ppmを超えるとめっき密着性が低下する
ためである。
O and S contents are each 30 ppm or less, 2゜ρp
The reason for setting it below m is that ○ content is 30 ppm, and
This is because if the content exceeds 20 ppm, plating adhesion will decrease.

[実施例コ 次に本発明を実施例によって具体的に説明する。[Example code] Next, the present invention will be specifically explained with reference to Examples.

第1表に示す本発明合金及び比較合金に係る各種成分組
成のインゴットを、電気銅あるいは無酸素銅を原料とし
て高周波溶解炉で大気、不活性又は還元性雰囲気中で溶
製1、た。これらインゴットの面削を行った後、850
°Cで熱間圧延を行い、8mmの厚さとし、面削後、厚
さ 1 、5mmまで冷間圧延した。その後、950°
Cにて10分間溶体化処理を行い、冷間圧延で厚さ0.
25mmの板とし、最後に420℃で2時間の時効処理
を行った。
Ingots of various compositions according to the present invention alloy and comparative alloy shown in Table 1 were melted using electrolytic copper or oxygen-free copper as a raw material in a high-frequency melting furnace in air, an inert atmosphere, or a reducing atmosphere. After face cutting these ingots, 850
Hot rolling was carried out at °C to a thickness of 8 mm, and after facing, cold rolling was carried out to a thickness of 1.5 mm. Then 950°
Solution treatment was carried out at C for 10 minutes, and the thickness was reduced to 0.5 mm by cold rolling.
It was made into a 25 mm plate, and finally aged at 420°C for 2 hours.

リードフレーム制及びばね利としての評価項目として、
強度、伸びを引張試験により、曲げ性を90°繰り返し
曲げ試験により、1往復を1回として破断までの曲げ回
数をall+定し、導電性(放熱性)を導電率(%IA
C3)によって示した。半田イマ]け性は、垂直式浸漬
法で230± 5°Cの半LH浴(錫60%、鉛40%
)に5秒間浸漬し、半田のぬれの状態を目視観察するこ
とにより評価した。めっき密着性は試料に厚さ 3μm
のAgめっきを施し、450°Cにて5分間加熱し、表
面に発生するフクレの有無を目視観察することにより評
価17た。耐熱性は5分間焼鈍した場合、焼鈍前の硬さ
の80%となる焼鈍温度で示した。 半田耐熱剥離性の
評価は、累月に 5μmの半田めっき(錫60%、鉛4
0%)を施し、150℃の恒温槽に1. OOOh r
まで保持し、100hr毎に取り出して90°曲げ往復
1回を施して、半[[)の剥離の有無を調べた。酸化膜
密着性については、素手イを200〜500℃で3分間
大気中で加熱して表面に酸化膜を生成させ、その酸化膜
に粘着テープを貼った後、−気に剥して酸化膜の剥離の
有無により評価を行った。
As evaluation items for lead frame system and spring rate,
The strength and elongation were determined by a tensile test, the bendability was determined by a 90° repeated bending test, the number of bends until breakage was determined as all+, with each reciprocation being one time, and the electrical conductivity (heat dissipation) was determined by the conductivity (%IA).
C3). Soldering properties were tested using the vertical immersion method in a half-LH bath (60% tin, 40% lead) at 230±5°C.
) for 5 seconds, and the state of solder wetting was evaluated by visually observing. Plating adhesion to the sample with a thickness of 3 μm
The sample was plated with Ag, heated at 450°C for 5 minutes, and visually observed for the presence or absence of blisters on the surface, giving an evaluation of 17. Heat resistance was expressed as the annealing temperature at which the hardness was 80% of the hardness before annealing when annealed for 5 minutes. The evaluation of solder heat resistance peeling was performed by applying 5 μm solder plating (60% tin, 4 lead) every month.
0%) and placed in a thermostat at 150°C. OOOh r
The sample was held until 100 hours, and the sample was taken out every 100 hours and bent at 90° and reciprocated once to check for peeling of the half [[). Regarding oxide film adhesion, heat a bare hand in the air at 200 to 500°C for 3 minutes to generate an oxide film on the surface, apply adhesive tape to the oxide film, and then carefully peel it off to remove the oxide film. Evaluation was made based on the presence or absence of peeling.

ばね性の評価は、ばね限界値(Kb)をΔ111定する
ことにより行った。これらの結果を第1表に示す。
The spring properties were evaluated by determining the spring limit value (Kb) as Δ111. These results are shown in Table 1.

] 1 本発明合金及び比較合金について説明を加える。] 1 An explanation will be added regarding the present invention alloy and comparative alloy.

本発明合金のNo1.4.6.8、]0.12.14は
、本発明の基本成分系のもので、強度、導電性、平田耐
熱剥離性に優れており、又、その他の特性についても良
好である。No、2.3.5.7.9.11.13.1
5は、基本成分系に副成分を添加したもので、基本成分
系のものと同様に良好な特性が得られる。
Invention alloys No. 1.4.6.8 and ]0.12.14 are based on the basic composition of the invention, and are excellent in strength, conductivity, and Hirata heat peeling resistance, as well as other properties. is also good. No, 2.3.5.7.9.11.13.1
No. 5 is a product in which subcomponents are added to the basic component system, and good characteristics similar to those of the basic component system can be obtained.

比較合金のNo、1[iはCrが、No、17はSnが
それぞれ充分な添加量でないため、強度、ばね特性、耐
熱性か本発明合金に比べ劣っている。
Comparative alloys No. 1 and No. 1 [i do not have sufficient amounts of Cr, and No. 17 and No. 17 do not have sufficient amounts of Sn, so they are inferior to the alloys of the present invention in terms of strength, spring properties, and heat resistance.

No、18はCrが1 、0wt%を超えているため、
導電性、曲げ性、半田付は性及びめっき密着性が本発明
合金に比べ劣っている。No、19はSnが1.0w1
%を超えているため導電性か本発明に比べ劣っている。
No. 18 has Cr exceeding 1.0 wt%, so
The conductivity, bendability, solderability, and plating adhesion are inferior to the alloys of the present invention. No. 19 has Sn of 1.0w1
%, the conductivity is inferior to that of the present invention.

No、20はMnを添加しておらず、又、○含有量が[
ioppmと高いため、半田耐熱剥離性、めっき密着性
が本発明合金に比べ劣っている。No、21はS含有温
か4[ippmと高いため、めっき密着性か本発明合金
に比べ劣っている。
No. 20 does not contain Mn, and the ○ content is [
Because of the high ioppm, the solder heat peeling resistance and plating adhesion are inferior to those of the alloy of the present invention. No. 21 has a high S content of 4 [ippm], so its plating adhesion is inferior to that of the alloy of the present invention.

[発明の効果] 以上詳述したように、本発明合金は、強度、導電性、半
田耐熱剥離性その他の特性に優れている。したがって、
本発明合金は、半導体集積回路のリード+2及び端子、
コネクター リIノースイッチ等の導電性ばね+」に適
している。
[Effects of the Invention] As detailed above, the alloy of the present invention is excellent in strength, conductivity, solder heat resistance, and other properties. therefore,
The alloy of the present invention can be used for leads +2 and terminals of semiconductor integrated circuits,
Connector: Suitable for conductive springs such as re-I-no switches.

Claims (3)

【特許請求の範囲】[Claims] (1)Cr:0.2wt%を超え1.0wt%以下、S
n:0.2wt%を超え1.0wt%以下、Mn:0.
1wt%を超え0.8wt%以下を含み、残部Cu及び
不可避不純物からなることを特徴とする半田耐熱剥離性
に優れた電子機器用高力高導電銅合金。
(1) Cr: more than 0.2wt% and less than 1.0wt%, S
n: more than 0.2wt% and less than 1.0wt%, Mn: 0.
A high-strength, high-conductivity copper alloy for electronic devices having excellent solder heat resistance and peelability, the alloy containing more than 1 wt% and 0.8 wt% or less, and the balance consisting of Cu and inevitable impurities.
(2)Cr:0.2wt%を超え1.0wt%以下、S
n:0.2wt%を超え1.0wt%以下、Mn:0.
1wt%を超え0.8wt%以下、更に副成分としてA
g、Al、As、B、Be、Fe、Ge、Hf、In、
Mo、Ni、Pb、Sb、Vからなる群より選択された
1種又は2種以上を総量で0.01〜2.0wt%含み
、残部Cu及び不可避不純物からなることを特徴とする
半田耐熱剥離性に優れた電子機器用高力高導電銅合金。
(2) Cr: more than 0.2wt% and less than 1.0wt%, S
n: more than 0.2wt% and less than 1.0wt%, Mn: 0.
More than 1wt% and 0.8wt% or less, and A as a subcomponent
g, Al, As, B, Be, Fe, Ge, Hf, In,
Solder heat-resistant peeling characterized by containing one or more selected from the group consisting of Mo, Ni, Pb, Sb, and V in a total amount of 0.01 to 2.0 wt%, with the balance consisting of Cu and inevitable impurities. A high-strength, high-conductivity copper alloy for electronic devices with excellent properties.
(3)O含有量が30ppm以下、S含有量が20pp
m以下である請求項(1)又は(2)記載の半田耐熱剥
離性に優れた電子機器用高力高導電銅合金。
(3) O content is 30 ppm or less, S content is 20 ppm
The high-strength, high-conductivity copper alloy for electronic devices as claimed in claim 1 or 2, which has excellent solder heat resistance and peelability.
JP22836890A 1990-08-31 1990-08-31 High strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder Pending JPH04110429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22836890A JPH04110429A (en) 1990-08-31 1990-08-31 High strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22836890A JPH04110429A (en) 1990-08-31 1990-08-31 High strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder

Publications (1)

Publication Number Publication Date
JPH04110429A true JPH04110429A (en) 1992-04-10

Family

ID=16875370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22836890A Pending JPH04110429A (en) 1990-08-31 1990-08-31 High strength and high conductivity copper alloy for electronic equipment excellent in thermal peeling resistance of solder

Country Status (1)

Country Link
JP (1) JPH04110429A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112063A1 (en) 2005-04-15 2006-10-26 Jfe Precision Corporation Alloy material for dissipating heat from semiconductor device and method for production thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112063A1 (en) 2005-04-15 2006-10-26 Jfe Precision Corporation Alloy material for dissipating heat from semiconductor device and method for production thereof

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