JPH04122020A - Vapor phase epitaxy method - Google Patents
Vapor phase epitaxy methodInfo
- Publication number
- JPH04122020A JPH04122020A JP24351890A JP24351890A JPH04122020A JP H04122020 A JPH04122020 A JP H04122020A JP 24351890 A JP24351890 A JP 24351890A JP 24351890 A JP24351890 A JP 24351890A JP H04122020 A JPH04122020 A JP H04122020A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial growth
- gas
- epitaxial
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔概 要〕
気相エピタキシャル成長方法に関し、
エピタキシャル成長後の基板を冷却する過程で、エピタ
キシャル結晶中の易蒸発性元素や、拡散係数の大きい元
素が蒸発、拡散してエピタキシャル結晶の組成、特に該
エピタキシャル結晶の表面層の組成変動が生じるのを防
止することを目的とし、反応容器内の基板設置台上にエ
ピタキシャル成長用基板を設置し、該基板上にエピタキ
シャル成長用ガスを供給しながら該基板を加熱し、前記
エピタキシャル成長用ガスの分解成分を基板上に被着し
て該基板にエピタキシャル結晶を成長する方法に於いて
、
前記基板設置台に冷却用ガスが通過するガス通路を設け
、エピタキシャル成長後に前記ガス通路より冷却用ガス
を導入し、該エピタキシャル結晶成長後の基板を冷却ガ
スで浮上させながら冷却するようにしで構成する。[Detailed Description of the Invention] [Summary] Regarding the vapor phase epitaxial growth method, in the process of cooling the substrate after epitaxial growth, easily evaporable elements and elements with large diffusion coefficients in the epitaxial crystal evaporate and diffuse, resulting in formation of the epitaxial crystal. For the purpose of preventing variations in the composition of the epitaxial crystal, especially in the surface layer of the epitaxial crystal, an epitaxial growth substrate is placed on a substrate mounting table in a reaction vessel, and an epitaxial growth gas is supplied onto the substrate. In the method of growing an epitaxial crystal on the substrate by heating the substrate and depositing the decomposed components of the epitaxial growth gas on the substrate, the substrate mounting table is provided with a gas passage through which a cooling gas passes. After epitaxial growth, a cooling gas is introduced from the gas passage, and the substrate after epitaxial crystal growth is cooled while floating with the cooling gas.
［産業上の利用分野〕 本発明は気相エピタキシャル成長方法に関する。[Industrial application field] The present invention relates to a vapor phase epitaxial growth method.
赤外線検知素子形成材料として、エネルギーバンドギャ
ップの狭い水銀・カドミウム・テルル（ＨｇＣｄＴｅ）
のような化合物半導体結晶が用いられており、この結晶
を素子形成に都合が良いように、薄層状態で、かつ大面
積で得るようにするために、気相エピタキシャル成長方
法が用いられている。Mercury-cadmium-tellurium (HgCdTe), which has a narrow energy band gap, is used as a material for forming infrared sensing elements.
Compound semiconductor crystals such as the following are used, and a vapor phase epitaxial growth method is used to obtain this crystal in a thin layer state and over a large area so as to be convenient for device formation.
このような赤外線検知素子は、近年、益々高密度に形成
することが要求されており、そのために検知素子形成材
料のエピタキシャル結晶は、エピタキシャル成長用の基
板の全領域にわたって組成変動の少ない結晶が要望され
る。In recent years, such infrared sensing elements have been required to be formed at an increasingly high density, and for this reason, the epitaxial crystal of the sensing element forming material is required to have a crystal with little compositional variation over the entire area of the substrate for epitaxial growth. Ru.
このような気相エピタキシャル成長方法に用いる装置と
して、基板上に形成されたエピタキシャル結晶から易蒸
発性の水銀の原子が容器内に蒸発したり、或いは基板の
冷却時間を短縮するのを目的として第２図、および第３
図に示す構造の装置が特開昭６４−８２６１３号に於い
て提案されている。The equipment used in such a vapor phase epitaxial growth method is such that the easily evaporable mercury atoms evaporate from the epitaxial crystal formed on the substrate into the container, or the second equipment is used for the purpose of shortening the cooling time of the substrate. Figure, and the third
A device having the structure shown in the figure is proposed in Japanese Patent Application Laid-open No. 82613/1983.
即ち、第２図に示すように反応容器１内に設置された基
板設置台２を冷却するための冷却ガスを導入される冷却
用ガス配管３の出口４が、前記基板設置台２に近接して
設けられ、この冷却用ガスで前記基板設置台２を冷却す
ることで、エピタキシャル成長後の基板５を急速冷却し
てエピタキシャル結晶から易蒸発性の元素が蒸発するの
を防止している。That is, as shown in FIG. 2, the outlet 4 of the cooling gas pipe 3 into which cooling gas is introduced for cooling the substrate installation stand 2 installed in the reaction vessel 1 is close to the substrate installation stand 2. By cooling the substrate mounting table 2 with this cooling gas, the substrate 5 after epitaxial growth is rapidly cooled to prevent easily evaporable elements from evaporating from the epitaxial crystal.
また、第３図に示すように基板設置台２の内部に冷却用
ガス配管３を埋設するように設置し、エピタキシャル成
長後の基板設置台２を急速に冷却することでエピタキシ
ャル成長後の基板５を急速冷却してエピタキシャル結晶
から易蒸発性の元素が蒸発するのを防止している。In addition, as shown in FIG. 3, a cooling gas pipe 3 is installed to be buried inside the substrate mounting table 2, and by rapidly cooling the substrate mounting table 2 after epitaxial growth, the substrate 5 after epitaxial growth can be rapidly cooled. The cooling prevents easily evaporable elements from evaporating from the epitaxial crystal.
然し、上記した装置では基板設置台２を冷却することで
エピタキシャル成長後の基板５を冷却するようにしてお
り、直接エピタキシャル成長用の基板５に冷却用ガスが
当たらないようにしているために、冷却に要する時間が
長くかかる問題がある。However, in the above-mentioned apparatus, the substrate 5 after epitaxial growth is cooled by cooling the substrate mounting table 2, and since the cooling gas is prevented from directly hitting the substrate 5 for epitaxial growth, the cooling is not performed properly. The problem is that it takes a long time.
そのため、基板上に形成されたエピタキシャル結晶に含
まれている易蒸発性の元素が、該結晶内で拡散したり、
或いは該結晶より蒸発するようになり、基板の全領域の
範囲に均一の組成のエピタキシャル結晶が得られない問
題が生じる。Therefore, easily evaporable elements contained in the epitaxial crystal formed on the substrate may diffuse within the crystal, or
Alternatively, it may evaporate from the crystal, causing a problem that an epitaxial crystal with a uniform composition cannot be obtained over the entire region of the substrate.
特に検知素子として利用するエピタキシャル結晶の表面
の組成が不均一になるといった問題がある。In particular, there is a problem that the surface composition of the epitaxial crystal used as a sensing element becomes non-uniform.
また第３図に示すように、基板設置台２に冷却用ガス配
管３を埋設する構造は煩雑で問題が多い。Further, as shown in FIG. 3, the structure of embedding the cooling gas pipe 3 in the substrate installation stand 2 is complicated and has many problems.
本発明は上記した問題点を解決するもので、エピタキシ
ャル成長用基板に直接冷却用ガスが当たるようにして、
更に一層エビタキシャル成長後の基板の冷却効果を高め
、然も用いる装置の構造が簡単な気相エピタキシャル成
長方法の提供を目的とするものである。The present invention solves the above-mentioned problems by directly applying cooling gas to the epitaxial growth substrate.
A further object of the present invention is to provide a vapor phase epitaxial growth method that further enhances the cooling effect of the substrate after epitaxial growth and has a simple structure of the apparatus used.
上記目的を達成する本発明の気相エピタキシャル成長方
法は、第１図に示すように基板設置台２に冷却用ガスが
通過するガス通路１１を設け、エピタキシャル成長後に
前記ガス通路１１より冷却用ガスを導入し、該エピタキ
シャル結晶成長後の基板５を冷却ガスで浮上しながら該
基板を冷却することを特徴とする。In the vapor phase epitaxial growth method of the present invention which achieves the above object, as shown in FIG. 1, a gas passage 11 through which a cooling gas passes is provided in the substrate mounting table 2, and the cooling gas is introduced from the gas passage 11 after epitaxial growth. The method is characterized in that the substrate 5 after the epitaxial crystal growth is cooled while being floated by a cooling gas.
また前記冷却用ガスに易蒸発性の元素を含むようにする
。Further, the cooling gas contains an easily evaporable element.
本発明の方法は第１図に示すように、基板設置台２に冷
却ガスが通過するようなガス通路１１を設け、このガス
通路１１に冷却用ガスを導入してエピタキシャル成長後
の基板５の裏面側より直接冷却用ガスが当たるようにす
る。このようにしてエピタキシャル成長後の基板５を前
記冷却ガスにて浮上させ、これによって基板に直接冷却
用ガスが当たるようになるために、更に一層冷却効果が
高まる。As shown in FIG. 1, the method of the present invention is to provide a gas passage 11 through which a cooling gas passes through the substrate mounting table 2, and introduce the cooling gas into the gas passage 11 to coat the back surface of the substrate 5 after epitaxial growth. Make sure that the cooling gas hits directly from the side. In this way, the substrate 5 after epitaxial growth is floated by the cooling gas, and as a result, the cooling gas comes into direct contact with the substrate, so that the cooling effect is further enhanced.
そのため、基板上に形成された）ＩｇｃｄＴｅのような
エピタキシャル結晶で易蒸発性の水銀の元素を含んだ場
合、この水銀が基板の冷却過程でエピタキシャル結晶内
で再拡散したり、或いはエピタキシャル結晶より蒸発し
たりするのが避けられ、基板の全領域の範囲にわたって
、特にエピタキシャル結晶の表面層で組成が均一なエピ
タキシャル結晶が得られるようになる。Therefore, if an epitaxial crystal such as IgcdTe (formed on a substrate) contains the element of mercury, which is easily vaporized, this mercury may re-diffuse within the epitaxial crystal during the cooling process of the substrate, or evaporate from the epitaxial crystal. This makes it possible to obtain an epitaxial crystal with a uniform composition over the entire region of the substrate, particularly in the surface layer of the epitaxial crystal.
また冷却用ガスとして例えば水素（Ｈ２）、或いはアル
ゴン（＾ｒ）ガスを用い、この冷却用ガスに易蒸発性の
元素の水銀を添加すると、更にエピタキシャル結晶から
の水銀の蒸発が防止できる。Furthermore, if hydrogen (H2) or argon (^r) gas is used as the cooling gas, and mercury, which is an easily evaporable element, is added to the cooling gas, evaporation of mercury from the epitaxial crystal can be further prevented.
以下、図面を用いて本発明の一実施例に付き詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail using the drawings.
第１図は本発明の方法の一実施例の説明図である。FIG. 1 is an explanatory diagram of one embodiment of the method of the present invention.
図示するように反応容器１に設けた回転する石英製の支
持棒１２上には、例えば直径が８．０ ｃｍ、厚さが５
．０ （Ｊのグラファイト製の基板設置台２を設置する
。そしてこの基板設置台２上には、例えば直径が３イン
チで、厚さが０．３５ｍのサファイアより成るエピタキ
シャル成長用の基板５を設置し、反応容器１内をガス排
気管１４より所定の真空度に成るまで排気した後、ガス
導入管］３より水銀、ジエチルテルル、ジメチルカドミ
ウムを担持した水素ガスよりなるエピタキシャル成長用
の原料ガスを導入する。そして反応容器の周囲に設けた
高周波誘導コイル１５に通電して基板設置台２を加熱し
てエピタキシャル成長用の基板５上にＨｇＣｄＴｅのエ
ピタキシャル結晶を、例えば３０μ−の厚さで形成する
。As shown in the figure, on a rotating quartz support rod 12 provided in the reaction vessel 1, there is a support rod 12 having a diameter of 8.0 cm and a thickness of 5 cm, for example.
．． 0 (J) is installed. On this substrate installation stand 2, a substrate 5 for epitaxial growth made of sapphire with a diameter of 3 inches and a thickness of 0.35 m, for example, is installed. After evacuating the inside of the reaction vessel 1 to a predetermined degree of vacuum through the gas exhaust pipe 14, a raw material gas for epitaxial growth consisting of hydrogen gas carrying mercury, diethyl tellurium, and dimethyl cadmium is introduced through the gas introduction pipe 3. Then, the high-frequency induction coil 15 provided around the reaction vessel is energized to heat the substrate mounting table 2 to form an epitaxial crystal of HgCdTe with a thickness of, for example, 30 μm on the substrate 5 for epitaxial growth.
次いでエピタキシャル結晶を基板上に所定の厚さ成長し
た後、基板設置台２に設けたガス通路１１より八ｒより
なる冷却用ガスを導入してエピタキシャル成長後の基板
５を基板設置台２より浮上させる。Next, after epitaxial crystals are grown to a predetermined thickness on the substrate, a cooling gas consisting of 8R is introduced through the gas passage 11 provided on the substrate mounting table 2, and the epitaxially grown substrate 5 is floated from the substrate mounting table 2. .
このような条件でエピタキシャル成長すると、基板設置
台２の熱容量は約７３ｃａ ｌ ／ ”ｃで、エピタキ
シャル成長用の基板５の熱容量は１．３ｃａｌ／ ’ｅ
である。When epitaxial growth is performed under these conditions, the heat capacity of the substrate mounting table 2 is approximately 73 cal/'c, and the heat capacity of the substrate 5 for epitaxial growth is 1.3 cal/'e.
It is.
そのため、従来のように基板設置台２を冷却する場合と
比較して、本発明のエピタキシャル成長後の基板５のみ
を冷却する場合は、その熱容量が１７５０となり、従来
の方法に比較して１１５００時間でエピタキシャル成長
後の基板５が冷却されることになり、そのため、基板上
に形成されたエピタキシャル結晶より易蒸発性の元素が
蒸発するのが防止でき、組成の安定したエピタキシャル
結晶が基板の全領域上に得られることになる。Therefore, when cooling only the substrate 5 after epitaxial growth according to the present invention, the heat capacity is 1750, which is 11500 hours compared to the conventional method. The substrate 5 after epitaxial growth is cooled, which prevents elements that are more easily evaporated than the epitaxial crystal formed on the substrate from evaporating, and the epitaxial crystal with a stable composition is formed over the entire region of the substrate. You will get it.
また前記したＡｒよりなる冷却用ガスに、エピタキシャ
ル結晶に含まれている易蒸発性の水銀のガスを添加する
と、より一層エピタキシャル結晶からのＨｇの蒸発が防
げることになり、より一層、組成の均一なエピタキシャ
ル結晶が基板上に形成されることになる。Furthermore, if mercury gas, which is easily evaporable and is contained in the epitaxial crystal, is added to the above-mentioned cooling gas made of Ar, the evaporation of Hg from the epitaxial crystal can be further prevented, and the composition can be made even more uniform. An epitaxial crystal will be formed on the substrate.
なお、本実施例では基板上にＨｇＣｄＴｅの結晶をエピ
タキシャル成長する場合について述べたが、その他、ガ
リウム砒素（ＧａＡｓ）のように易蒸発性の砒素原子を
含む化合物半導体結晶に於いても適用できるのは無論で
ある。Although this example describes the epitaxial growth of HgCdTe crystals on a substrate, the present invention can also be applied to compound semiconductor crystals containing easily evaporable arsenic atoms such as gallium arsenide (GaAs). Of course.
以上の説明から明らかなように本発明によれば、従来の
装置より、エピタキシャル成長後の基板の冷却速度が向
上するので、易蒸発性の元素が成長後のエピタキシャル
結晶より蒸発しなくなり、組成の均一なエピタキシャル
結晶が基板の全領域にわたって成長できる効果がある。As is clear from the above description, according to the present invention, the cooling rate of the substrate after epitaxial growth is improved compared to conventional equipment, so that easily evaporable elements do not evaporate from the grown epitaxial crystal, resulting in a uniform composition. This has the effect of allowing epitaxial crystals to grow over the entire region of the substrate.
第１図は本発明の方法の一実施例の説明図、第２図およ
び第３図は従来の装置の説明図である。
図において、
ｌ
は反応容器、
は基板設置台、
１１はガス通路、FIG. 1 is an explanatory diagram of one embodiment of the method of the present invention, and FIGS. 2 and 3 are explanatory diagrams of a conventional apparatus. In the figure, l is a reaction container, is a substrate installation stand, 11 is a gas passage,
Claims (2)
キシャル成長用の基板（５）を設置し、該基板（５）上
にエピタキシャル成長用ガスを供給しながら該基板（５
）を加熱し、前記エピタキシャル成長用ガスの分解成分
を基板（５）上に被着して該基板にエピタキシャル結晶
を成長する方法に於いて、前記基板設置台（２）に冷却
用ガスが通過するガス通路（１１）を設け、エピタキシ
ャル成長後に前記ガス通路（１１）より冷却用ガスを導
入し、該エピタキシャル結晶成長後の基板（５）を、前
記冷却ガスで浮上させながら冷却するようにしたことを
特徴とする気相エピタキシャル成長方法。(1) A substrate (5) for epitaxial growth is installed on the substrate installation stand (2) in the reaction vessel (1), and while supplying a gas for epitaxial growth onto the substrate (5), the substrate (5) is
), and the decomposed components of the epitaxial growth gas are deposited on the substrate (5) to grow an epitaxial crystal on the substrate, in which a cooling gas is passed through the substrate mounting table (2). A gas passage (11) is provided, a cooling gas is introduced through the gas passage (11) after epitaxial growth, and the substrate (5) after the epitaxial crystal growth is cooled while floating with the cooling gas. Characteristic vapor phase epitaxial growth method.
数の大きい元素を添加して冷却することを特徴とする請
求項（１）記載の気相エピタキシャル成長方法。(2) The vapor phase epitaxial growth method according to claim (1), wherein an easily evaporable element or an element with a large diffusion coefficient is added to the cooling gas for cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24351890A JPH04122020A (en) | 1990-09-12 | 1990-09-12 | Vapor phase epitaxy method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24351890A JPH04122020A (en) | 1990-09-12 | 1990-09-12 | Vapor phase epitaxy method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04122020A true JPH04122020A (en) | 1992-04-22 |
Family
ID=17105101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24351890A Pending JPH04122020A (en) | 1990-09-12 | 1990-09-12 | Vapor phase epitaxy method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04122020A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002892A1 (en) * | 1993-07-12 | 1995-01-26 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5416043A (en) * | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5863823A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
| US5864162A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| US5930638A (en) * | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
| US5973363A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
-
1990
- 1990-09-12 JP JP24351890A patent/JPH04122020A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002892A1 (en) * | 1993-07-12 | 1995-01-26 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5416043A (en) * | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5492857A (en) * | 1993-07-12 | 1996-02-20 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5572040A (en) * | 1993-07-12 | 1996-11-05 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5596205A (en) * | 1993-07-12 | 1997-01-21 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5600169A (en) * | 1993-07-12 | 1997-02-04 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5663570A (en) * | 1993-07-12 | 1997-09-02 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5861336A (en) * | 1993-07-12 | 1999-01-19 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5863823A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
| US5864162A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| US5883396A (en) * | 1993-07-12 | 1999-03-16 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| US5895957A (en) * | 1993-07-12 | 1999-04-20 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5930638A (en) * | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
| US5973363A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
| US6057555A (en) * | 1993-07-12 | 2000-05-02 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
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