JPH04132203A - Manufacture of voltage-dependent nonlinear resistance element - Google Patents

Manufacture of voltage-dependent nonlinear resistance element

Info

Publication number
JPH04132203A
JPH04132203A JP2253728A JP25372890A JPH04132203A JP H04132203 A JPH04132203 A JP H04132203A JP 2253728 A JP2253728 A JP 2253728A JP 25372890 A JP25372890 A JP 25372890A JP H04132203 A JPH04132203 A JP H04132203A
Authority
JP
Japan
Prior art keywords
powder
varistor
active oxygen
voltage
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2253728A
Other languages
Japanese (ja)
Inventor
Koichi Tsuda
孝一 津田
Toyoshige Sakaguchi
豊重 坂口
Kazuo Koe
向江 和郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2253728A priority Critical patent/JPH04132203A/en
Publication of JPH04132203A publication Critical patent/JPH04132203A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To obtain a giant particle directly from a varistor powder, to be a low cost and to be provided with an excellent characteristic by a method wherein zinc oxide is used as a main component, an auxiliary component in very small quantities is added to and mixed with it and this mixture is molded and baked in an active oxygen atmosphere. CONSTITUTION:For example, a raw material in which an auxiliary component such as praseodymium oxide (Pr6O11), lanthanum oxide (La2O3), boron oxide (B2O3) or the like in proper quantities has been added to zinc oxide (ZnO) powder is mixed sufficiently by using a wet ball mill; a granulated powder (a varistor raw-material powder) is obtained by using a spray drier; and it is baked for several hours. As a baking atmosphere, the concentration of air and nitrous oxide (N2O) is changed; and the powder is baked under their atmospheric pressure. When the varistor powder is baked in an active oxygen atmosphere, it is not required to manufacture nucleus particles. Atoms are diffused easily in the active oxygen atmosphere because particles are grown; and giant particles can be obtained at a low temperature and in a short time. The auxiliary component is evaporated little.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は電圧非直線抵抗素子の製造方法に係わり、特
に素子の焼成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a voltage nonlinear resistance element, and more particularly to a method for firing the element.

〔従来の技術〕[Conventional technology]

酸化亜鉛(ZnO)を主成分としこれに微量の添加物を
加えて混合した後焼結してつくられるセラミックスは、
優れた電圧非直線性を示すことが知られており、電気回
路における異常電圧(サージ)を抑制するためのバリス
タとして広く実用に供されている。
Ceramics are made by mixing zinc oxide (ZnO) with trace amounts of additives and then sintering it.
It is known to exhibit excellent voltage nonlinearity, and is widely used as a varistor to suppress abnormal voltage (surge) in electrical circuits.

Z!1Gバリスタの電圧非直線性は、ZnO粒子の粒界
に形成されるシ1ソトキ障壁に起因するものである。実
用的なバリスタにおいては、ZnO粒子が結合して形成
される粒界1層重たりのバリスタ電圧は、結晶粒径の大
きさにかかわらずほぼ一定であり、その値は2v程度で
ある。バリスタ電圧とはバリスタに1mAの電流を流し
たときの端子間電圧であり、通常V81.で表わされる
。したがって、電圧非直線抵抗素子のバリスタ電圧は、
Zoo焼結体上に設けられた電極間に存在する粒界層の
数によって決定される。このため低電圧回路に用いられ
る素子に対しては、素子の厚さを薄くするか、あるいは
ZnO粒子径を十分に大きくする必要がある。
Z! The voltage nonlinearity of the 1G varistor is due to the 1-socket barrier formed at the grain boundaries of ZnO particles. In a practical varistor, the varistor voltage per layer of grain boundaries formed by bonding ZnO particles is approximately constant regardless of the size of the crystal grains, and its value is about 2V. Varistor voltage is the voltage between the terminals when a current of 1 mA is passed through the varistor, and is usually V81. It is expressed as Therefore, the varistor voltage of the voltage nonlinear resistance element is
It is determined by the number of grain boundary layers existing between the electrodes provided on the Zoo sintered body. Therefore, for elements used in low voltage circuits, it is necessary to reduce the thickness of the element or to sufficiently increase the ZnO particle diameter.

例えばDC12V回路にZooバリスタを適用する場合
、回路電圧の変動などを考慮し、バリスタ電圧は一姫に
22Vのものが使用されるが、前述のように粒界1層重
たりのバリスタ電圧は約2vであるから、この素子の端
子電極間に存在し得る粒界は高々11層である。
For example, when applying a Zoo varistor to a DC 12V circuit, a varistor voltage of 22V is used in consideration of circuit voltage fluctuations, but as mentioned above, the varistor voltage for one layer of grain boundaries is approximately 2V, the number of grain boundaries that can exist between the terminal electrodes of this element is 11 layers at most.

一方、通常の方法でつくられるZnOバリスタ焼結体の
粒径は10〜20μであるから、約22Vのバリスタ電
圧を得るために、素子の厚さは0.1−0.2■にしな
ければならない、しかし、’lsOバリスタのような焼
結体は0.1〜0.2閣の厚さでは機械的強度が低く、
製作中に割れを生ずるなどの問題があり、素子をこのよ
うに薄くすることは実用的ではない。
On the other hand, since the grain size of ZnO varistor sintered bodies produced by the usual method is 10 to 20μ, the thickness of the element must be 0.1 to 0.2μ in order to obtain a varistor voltage of about 22V. However, sintered bodies such as 'lsO varistors have low mechanical strength at a thickness of 0.1 to 0.2 mm.
It is not practical to make the device this thin because of problems such as cracks occurring during manufacturing.

これを解決するためにZooバリスタをつくる際に、Z
nO原料の粉末にこれよりもはるかに大きな粒径のZn
O単結晶を少量添加し、そのZnO単結晶(以下、核粒
子と称する)を核として粒成長を促進させる方法が特公
昭56−11203号公報で開示されている。第6図に
この方法の流れ図を示し、第7図に核粒子を添加して大
気中において1350℃の温度で焼成した場合の結晶成
長の状況を示す、第7図のようにZooの原料粉末1が
核粒子3上に成長して粒! 100〜200−のZ+>
Oの巨大粒子4が得られる。
To solve this problem, when creating Zoo Barista,
Zn with a much larger particle size than this is added to the nO raw material powder.
Japanese Patent Publication No. Sho 56-11203 discloses a method in which a small amount of O single crystal is added and grain growth is promoted using the ZnO single crystal (hereinafter referred to as a core particle) as a core. Figure 6 shows the flowchart of this method, and Figure 7 shows the state of crystal growth when core particles are added and fired at a temperature of 1350°C in the atmosphere. 1 grows on the core particle 3 and becomes a grain! 100-200- Z+>
Giant particles 4 of O are obtained.

第8図は、核粒子3を添加することなく 、ZnOの原
料粉末lと図示してない微量添加物との混合物を造粒し
たバリスタ粉末を、大気中で焼成する場合の結晶成長の
状況を示すものである。この場合は焼結温度を1500
℃に高めたり焼結時間を長くしても、粒径は50m止ま
りの結晶粒2しか得ることができない、その上この方法
で素子を製作すると、高温で長時間焼成するため添加物
が蒸発して、素子の電圧非直線係数αが著しく低下し、
実用に供し得なくなる。
Figure 8 shows the state of crystal growth when varistor powder, which is made by granulating a mixture of ZnO raw material powder 1 and a small amount of additives (not shown) without adding core particles 3, is fired in the atmosphere. It shows. In this case, the sintering temperature is set to 1500
Even if the temperature is raised to ℃ or the sintering time is lengthened, only crystal grains with a grain size of 50 m can be obtained.Furthermore, when devices are manufactured using this method, additives evaporate due to the long sintering at high temperatures. As a result, the voltage nonlinear coefficient α of the element decreases significantly,
It becomes impossible to put it into practical use.

〔発明が解決しようとする1lII!〕核粒子を添加し
て大気中で焼成する方法は、上述のように巨大粒子が容
易に得られるが、この方法は核粒子を製造する工程が別
途必要であり、製造コストの増大を招(という問題があ
る。
[1lII that the invention tries to solve! ] As mentioned above, the method of adding core particles and firing in the atmosphere can easily produce giant particles, but this method requires a separate process to manufacture the core particles, which increases the manufacturing cost ( There is a problem.

この発明は上述の点に厳みてなされたものであり、その
目的はバリスタ粉末から直接的に巨大粒子を得るように
して、安価で特性に優れる電圧非直線抵抗素子を製造す
る方法を提供することにある。
This invention has been made with the above points in mind, and its purpose is to provide a method for manufacturing a voltage nonlinear resistance element with excellent characteristics at low cost by directly obtaining giant particles from varistor powder. It is in.

(IIIを解決するための手段〕 上述の目的はこの発明によれば、酸化亜鉛を主成分とし
これに微量の副成分を添加混合し、成形。
(Means for solving III) According to the present invention, the above-mentioned object is achieved by forming a molded product using zinc oxide as a main component, adding and mixing a small amount of auxiliary components thereto.

焼成してなる電圧非直線抵抗素子の製造方法において、
活性酸素雰囲気中で焼成を行なうことにより達成される
In a method for manufacturing a voltage nonlinear resistance element by firing,
This is achieved by firing in an active oxygen atmosphere.

〔作用〕[Effect]

バリスタ粉末を活性酸素雰囲気中で焼成すると、核粒子
を製造する必要がなくなる。活性酸素雰囲気中では粒成
長のための原子拡散が容易となり、低温かつ短時間で巨
大粒子が得られる。このため副成分の蒸発も少なくなる
Sintering the varistor powder in an active oxygen atmosphere eliminates the need to produce core particles. In an active oxygen atmosphere, atomic diffusion for grain growth becomes easy, and giant particles can be obtained at low temperatures and in a short time. Therefore, evaporation of subcomponents is also reduced.

〔実施例〕〔Example〕

以下、この発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.

スJ目1↓ 酸化亜鉛(ZaO)原料粉末に、酸化プラセオジウム(
PraO++)、 fII化ラフランタンag’s) 
、酸化硼素(R,O,)などの副成分を適量添加した原
料を湿式ボールミルで十分混合し、噴霧乾爆機により造
粒粉(バリスタ原料粉末)を得た0次いで温度1350
℃で数時間焼成した。ここで焼成雰囲気は、空気と亜酸
化窒素(NtO)の濃度比を変化させて各々大蒐圧で焼
成した0、得られた焼結体の大きさは直径14■で厚さ
はl■であった。この焼結体に直径11.5閣のオーミ
ック接触をする1橿を対向する面に設け、バリスタ特性
を測定した。その結果を第1図〜第3図の線図に示す、
第1図〜第3図の横軸目盛りはいずれも亜酸化窒素濃度
であり、縦軸はそれぞれ第1図が結晶粒径、第2図がV
 1116 / ’ +第3図が非直線係数を表わして
いる。
1↓ Zinc oxide (ZaO) raw material powder, praseodymium oxide (
PraO++), fII-formed Lafrantane ag's)
The raw materials to which appropriate amounts of subcomponents such as boron oxide (R, O,
It was baked at ℃ for several hours. Here, the firing atmosphere was 0,000,000 by varying the concentration ratio of air and nitrous oxide (NtO), and firing at large pressures.The size of the obtained sintered body was 14cm in diameter and 1cm in thickness. there were. A rod having an ohmic contact with a diameter of 11.5 mm was provided on the opposing surface of this sintered body, and the varistor characteristics were measured. The results are shown in the diagrams in Figures 1 to 3.
The horizontal scales in Figures 1 to 3 are all nitrous oxide concentrations, and the vertical axes are grain size in Figure 1 and VV in Figure 2.
1116/'+Figure 3 represents the nonlinear coefficient.

第1図において、亜酸化窒素濃度が5%以上では結晶粒
径は100−以上と大きなものが得られており、したが
って11A2図に示すようにv tea / tは20
V/fi以下であり、低電圧回路用電圧非直線抵抗素子
として適していることがわかる。亜酸化窒素濃度が4%
より低いと粒成長はあまり進まず、V+am/lが20
V/m以上に大幅に増大し、低電圧回路用電圧非直線抵
抗素子とするには実用的ではない、また第3図に示すよ
うに非直線係数αも30以上と優れている。
In Figure 1, when the nitrous oxide concentration is 5% or more, the crystal grain size is as large as 100- or more, and therefore, v tea / t is 20 as shown in Figure 11A2.
V/fi or less, which indicates that it is suitable as a voltage nonlinear resistance element for low voltage circuits. Nitrous oxide concentration is 4%
If the value is lower, grain growth will not proceed much, and if V+am/l is 20
V/m or more, which is not practical for use as a voltage nonlinear resistance element for low voltage circuits.As shown in FIG. 3, the nonlinear coefficient α is also excellent at 30 or more.

以上のように本実施例による素子は、第1図〜第3図に
併記した核粒子を用いて製造した素子(・)と比較して
、同等もしくはそれ以上の優れた特性を有することがわ
かる。
As described above, it can be seen that the device according to this example has characteristics that are equal to or better than the devices manufactured using the core particles shown in FIGS. 1 to 3 (・). .

支1皇1 実施例1と同様の手順によりバリスタ素子を作製したが
、ここでは焼成雰囲気を亜酸化窒素の代わりに二酸化窒
素(N(h)と空気の混合比を変えたものを用いている
。第4図は二酸化窒素濃度と結晶粒径との関係を示す線
図である。第4図から二酸化窒素濃度が4%以上で本発
明の効果があるのは明らかである。■l□/l 、 α
との関係は図示を省略したが、直」1例」−とほぼ同様
の結果が得られている。
A varistor element was produced using the same procedure as in Example 1, but here the firing atmosphere was changed to a different mixing ratio of nitrogen dioxide (N(h) and air) instead of nitrous oxide. . Figure 4 is a diagram showing the relationship between nitrogen dioxide concentration and crystal grain size. From Figure 4, it is clear that the present invention is effective when the nitrogen dioxide concentration is 4% or more. ■l□/ l, α
Although the relationship with ``1'' is not shown in the figure, almost the same results as in ``Example 1'' were obtained.

直1fL主 実施例1と同様の手順によりバリスタ素子を作製したが
、今度は焼成雰囲気を亜酸化窒素の代わりにオゾン(O
s)と空気の混合比を変えたものを用いた。第5図はオ
ゾン濃度と結晶粒径との関係を示す線図である。第5図
からオゾン濃度が4%以上で本発明の効果があるのは明
らかである。IEJlilと同じ< V +waa /
 t 、 αとの関係は図示を省略したが、この場合も
l施」限」−とほぼ同様の結果が得られている。
A direct 1fL varistor element was produced by the same procedure as in Main Example 1, but this time the firing atmosphere was changed to ozone (O2) instead of nitrous oxide.
s) and air were used with different mixing ratios. FIG. 5 is a diagram showing the relationship between ozone concentration and crystal grain size. It is clear from FIG. 5 that the present invention is effective when the ozone concentration is 4% or more. Same as IEJlil < V +waa /
The relationship between t and α is not shown in the figure, but in this case as well, almost the same results are obtained as in the case of the application limit.

〔発明の効果〕〔Effect of the invention〕

この発明によれば、酸化亜鉛を主成分としこれに微量の
副成分を添加混合し、成形、焼成してなる電圧非直線抵
抗素子の製造方法において、活性酸素雰囲気中で焼成を
行なうことにより、粒成長がはやくなり核粒子を使用す
る場合と同等の時間。
According to the present invention, in the method for manufacturing a voltage nonlinear resistance element made of zinc oxide as a main component, mixed with a small amount of subcomponents, molded and fired, the firing is performed in an active oxygen atmosphere. Grain growth is faster and takes the same amount of time as when using core particles.

温度で巨大結晶が得られるので、単位厚さ当たりのバリ
スタ電圧V tam / tを20V/聰以下にするこ
とができ、低電圧回路用に適した素子が得られる。また
核粒子を使用する場合と同等の時間、温度で結晶成長す
るので微量添加物の蒸発が少なく、非直線係数αの優れ
た素子を得ることができる。
Since a giant crystal can be obtained at a certain temperature, the varistor voltage V tam /t per unit thickness can be reduced to 20 V/volt or less, and an element suitable for low voltage circuits can be obtained. Furthermore, since the crystal grows at the same time and temperature as in the case of using core particles, there is little evaporation of trace additives, and an element with an excellent nonlinear coefficient α can be obtained.

さらに、この発明によれば核粒子を用いないので、製造
工程が簡単になり、コストダウンが可能となる。
Furthermore, according to the present invention, since no core particles are used, the manufacturing process is simplified and costs can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の実施例に係わる素子の結晶粒径と亜
酸化窒素濃度との関係を従来のものと対比して示した線
図、第2図はこの発明の実施例に係わる素子の単位厚さ
当たりのバリスタ電圧と亜酸化窒素濃度との関係を従来
のものと対比して示した線図、第3図はこの発明の実施
例に拘わる素子の非直線係数αと亜酸化窒素濃度との関
係を従来のものと対比して示した線図、第4図はこの発
明の実施例に係わる素子の結晶粒径と二酸化窒素濃度と
の関係を従来のものと対比して示した線図、第5図はこ
の発明の実施例に係わる素子の結晶粒径とオゾン濃度と
の関係を従来のものと対比して示した線図、第6図は従
来の素子の製造工程図、fJT図は核粒子を用いる従来
の製法の結晶成長を示す模式図、第8図は核粒子を用い
ない従来の製法の結晶成長を示す模式図である。 1m化亜鉛の原料粉末、2:結晶粒、3:核粒子、4:
巨大粒子。
FIG. 1 is a diagram showing the relationship between crystal grain size and nitrous oxide concentration of an element according to an embodiment of the present invention in comparison with a conventional one, and FIG. A diagram showing the relationship between the varistor voltage per unit thickness and the nitrous oxide concentration in comparison with the conventional one, and FIG. 3 shows the nonlinear coefficient α and the nitrous oxide concentration of the element according to the embodiment of the present invention. Figure 4 is a line showing the relationship between the crystal grain size and nitrogen dioxide concentration of the element according to the embodiment of the present invention in comparison with the conventional one. Fig. 5 is a diagram showing the relationship between the crystal grain size and ozone concentration of the element according to the embodiment of the present invention in comparison with the conventional one, and Fig. 6 is a manufacturing process diagram of the conventional element, fJT The figure is a schematic diagram showing crystal growth in a conventional manufacturing method using core particles, and FIG. 8 is a schematic diagram showing crystal growth in a conventional manufacturing method not using core particles. 1m zinc raw material powder, 2: crystal grains, 3: core particles, 4:
giant particles.

Claims (1)

【特許請求の範囲】 1)酸化亜鉛を主成分としこれに微量の副成分を添加混
合し、成形,焼成してなる電圧非直線抵抗素子の製造方
法において、活性酸素雰囲気中で焼成を行なうことを特
徴とする電圧非直線抵抗素子の製造方法。 2)請求項1記載の方法において、活性酸素雰囲気は空
気に亜酸化窒素を4%以上含むものであることを特徴と
する電圧非直線抵抗素子の製造方法。 3)請求項1記載の方法において、活性酸素雰囲気は空
気に二酸化窒素を4%以上含むものであることを特徴と
する電圧非直線抵抗素子の製造方法。 4)請求項1記載の方法において、活性酸素雰囲気は空
気にオゾンを4%以上含むものであることを特徴とする
電圧非直線抵抗素子の製造方法。
[Scope of Claims] 1) A method for manufacturing a voltage non-linear resistance element made of zinc oxide as a main component, mixed with a small amount of subcomponents, molded and fired, in which the firing is performed in an active oxygen atmosphere. A method for manufacturing a voltage nonlinear resistance element characterized by: 2) The method of manufacturing a voltage nonlinear resistance element according to claim 1, wherein the active oxygen atmosphere contains air containing 4% or more of nitrous oxide. 3) The method of manufacturing a voltage nonlinear resistance element according to claim 1, wherein the active oxygen atmosphere contains air containing 4% or more of nitrogen dioxide. 4) The method of manufacturing a voltage nonlinear resistance element according to claim 1, wherein the active oxygen atmosphere contains air containing 4% or more of ozone.
JP2253728A 1990-09-21 1990-09-21 Manufacture of voltage-dependent nonlinear resistance element Pending JPH04132203A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2253728A JPH04132203A (en) 1990-09-21 1990-09-21 Manufacture of voltage-dependent nonlinear resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2253728A JPH04132203A (en) 1990-09-21 1990-09-21 Manufacture of voltage-dependent nonlinear resistance element

Publications (1)

Publication Number Publication Date
JPH04132203A true JPH04132203A (en) 1992-05-06

Family

ID=17255319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2253728A Pending JPH04132203A (en) 1990-09-21 1990-09-21 Manufacture of voltage-dependent nonlinear resistance element

Country Status (1)

Country Link
JP (1) JPH04132203A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02219203A (en) * 1989-02-20 1990-08-31 Fuji Electric Co Ltd Manufacture of voltage dependent nonlinear resistive element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02219203A (en) * 1989-02-20 1990-08-31 Fuji Electric Co Ltd Manufacture of voltage dependent nonlinear resistive element

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