JPH0413657U - - Google Patents
Info
- Publication number
- JPH0413657U JPH0413657U JP5228090U JP5228090U JPH0413657U JP H0413657 U JPH0413657 U JP H0413657U JP 5228090 U JP5228090 U JP 5228090U JP 5228090 U JP5228090 U JP 5228090U JP H0413657 U JPH0413657 U JP H0413657U
- Authority
- JP
- Japan
- Prior art keywords
- target
- relatively
- ion beam
- beam sputtering
- consumed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図ないし第５図は本考案のイオンビームス
パツタリング用ターゲツトの実施例を示し、第１
図及び第２図は１実施例の使用前及び使用後の切
断正面図、第３図及び第４図はターゲツトの副素
体の他の例の平面図、第５図は他の実施例の切断
正面図、第６図はイオンビームスパツタリング装
置の概略正面図、第７図はビームプロフアイル、
第８図は使用後のターゲツトの切断正面図である
。
８……ターゲツト主素体、９……ターゲツト副
素体。
1 to 5 show embodiments of the ion beam sputtering target of the present invention.
2 and 2 are cutaway front views of one embodiment before and after use, FIGS. 3 and 4 are plan views of another example of the target subelement, and FIG. A cutaway front view, FIG. 6 is a schematic front view of the ion beam sputtering device, and FIG. 7 is a beam profile.
FIG. 8 is a cutaway front view of the target after use. 8...Target principal body, 9...Target sub-element body.
Claims (1)
体と、比較的消耗しない周縁部分のターゲツト副
素体の少なくとも２個の素体により構成したイオ
ンビームスパツタリング用ターゲツト。 A target for ion beam sputtering is constituted by at least two elements: a main target element in the central part which is relatively subject to wear and a target sub element in the peripheral part which is relatively not consumed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5228090U JPH0413657U (en) | 1990-05-18 | 1990-05-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5228090U JPH0413657U (en) | 1990-05-18 | 1990-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0413657U true JPH0413657U (en) | 1992-02-04 |
Family
ID=31572452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5228090U Pending JPH0413657U (en) | 1990-05-18 | 1990-05-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0413657U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001295038A (en) * | 2000-04-11 | 2001-10-26 | Toshiba Corp | Mosaic type sputtering target |
| EP1332512A2 (en) * | 2000-11-09 | 2003-08-06 | Williams Advanced Materials Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |
-
1990
- 1990-05-18 JP JP5228090U patent/JPH0413657U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001295038A (en) * | 2000-04-11 | 2001-10-26 | Toshiba Corp | Mosaic type sputtering target |
| EP1332512A2 (en) * | 2000-11-09 | 2003-08-06 | Williams Advanced Materials Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |