JPH0413663U - - Google Patents

Info

Publication number
JPH0413663U
JPH0413663U JP5435990U JP5435990U JPH0413663U JP H0413663 U JPH0413663 U JP H0413663U JP 5435990 U JP5435990 U JP 5435990U JP 5435990 U JP5435990 U JP 5435990U JP H0413663 U JPH0413663 U JP H0413663U
Authority
JP
Japan
Prior art keywords
compound semiconductor
quartz boat
single crystal
semiconductor single
ppma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5435990U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5435990U priority Critical patent/JPH0413663U/ja
Publication of JPH0413663U publication Critical patent/JPH0413663U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5435990U 1990-05-24 1990-05-24 Pending JPH0413663U (2)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5435990U JPH0413663U (2) 1990-05-24 1990-05-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5435990U JPH0413663U (2) 1990-05-24 1990-05-24

Publications (1)

Publication Number Publication Date
JPH0413663U true JPH0413663U (2) 1992-02-04

Family

ID=31576356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5435990U Pending JPH0413663U (2) 1990-05-24 1990-05-24

Country Status (1)

Country Link
JP (1) JPH0413663U (2)

Similar Documents

Publication Publication Date Title
PT87381A (pt) Process for the manufacture of oral forms of administration with delayed release containing carbamazepine
Osvensky et al. Influence of dopants on the velocity of dislocations in GaAs single crystals
JPH0413663U (2)
GB1095805A (en) Method for growing single crystals of vanadium dioxide
AT307508B (de) Vorrichtung zur Herstellung homogener und planparalleler epitaktischer Aufwachsschichten aus A<III>B<V>-Verbindungen durch Schmelzepitaxie
JPS538374A (en) Growing method for single crystal of semiconductor
JPS5373507A (en) Crystallization of pentaerythritol
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS544088A (en) Manufacture for semiconductor laser
JPS52138095A (en) Growth of sapphire single crystal
JPS51142272A (en) Method of manufacturing a compound-semiconductor device having muti-la yer structure
JPS5267571A (en) Crystallization method for semiconductor
JPS52136165A (en) Purification of pyrrolidine derivatives
JPS55115846A (en) Optical resolution of dl-mandelic acid
GILLESSEN et al. Materials for opto-electronic devices(fabrication of doped GaAs and GaP materials)[Final Report]
ATE154795T1 (de) Silbernitrat, hergestellt durch ein kontinuierliches verdampfungs- kristallisationsverfahren
JPS5373517A (en) Preparation of glyoxylic acid powder
JPS51126036A (en) Semi-conductor crystal growth method
JPS5330885A (en) Production of semiconductor light emitting element
JPS52154346A (en) Preparation of semiconductor crystal
JPS5289071A (en) Semiconductor device
JPS5271388A (en) Liquid phase epitaxial gorwth method
JPH03103264U (2)
JPS53115178A (en) Production of semiconductor device
JPS52114478A (en) Epitaxial crystal growth