JPH04141925A - Manufacture of electrode material - Google Patents
Manufacture of electrode materialInfo
- Publication number
- JPH04141925A JPH04141925A JP26308190A JP26308190A JPH04141925A JP H04141925 A JPH04141925 A JP H04141925A JP 26308190 A JP26308190 A JP 26308190A JP 26308190 A JP26308190 A JP 26308190A JP H04141925 A JPH04141925 A JP H04141925A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- copper
- point metal
- low melting
- electrode material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007772 electrode material Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000002844 melting Methods 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 230000008018 melting Effects 0.000 claims abstract description 62
- 239000010949 copper Substances 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 35
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 35
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 22
- 239000011651 chromium Substances 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 230000008595 infiltration Effects 0.000 abstract description 4
- 238000001764 infiltration Methods 0.000 abstract description 4
- 238000007796 conventional method Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 6
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 6
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
本発明は、低融点金属の分布のばらつきが少ない均質な
電極材料の製造方法に関し、特にビスマスを添加した銅
−クロム系の電極材料に応用して好適なものである。DETAILED DESCRIPTION OF THE INVENTION A. Industrial Field of Application The present invention relates to a method for producing a homogeneous electrode material with little variation in the distribution of low melting point metals, and is particularly applicable to copper-chromium based electrode materials containing bismuth. It is suitable for this purpose.
Ｂ１発明の概要
銅よりも高融点金属の粉末上に銅とこの銅よりも低融点
金属との合金と銅塊とを載置し、これらを加熱して高融
点金属の空隙部分からガスを放出させつつこの空隙部分
に銅及び低融点金属を溶浸させるようにした電極材料の
製造方法であり、銅と低融点金属との合金及び銅塊が高
融点金属の空隙部分に溶浸する途中で容器内が蓋で密封
されることにより、低融点金属の蒸散を抑制して所望の
性能を有する均質な電極材料を製造し得るようにしたも
のである。B1 Summary of the invention An alloy of copper and a metal with a lower melting point than copper and a copper ingot are placed on powder of a metal with a higher melting point than copper, and these are heated to release gas from the voids in the high melting point metal. This is a manufacturing method for an electrode material in which copper and a low melting point metal are infiltrated into the void portion while the alloy of copper and the low melting point metal and the copper ingot are infiltrated into the void portion of the high melting point metal. By sealing the inside of the container with a lid, evaporation of the low melting point metal is suppressed and a homogeneous electrode material having desired performance can be manufactured.
Ｃ０従来の技術
真空インタラプタの電極材料として要求ばれる重要な性
能の−・つとして、電流遮断性能の高いことが挙げられ
る。C0 Prior Art One of the important performances required of electrode materials for vacuum interrupters is high current interrupting performance.
近年、この電流遮断性能が非常に優れてしる銅−クロム
系の材料に、電流遮断後の接対抵抗値の上昇を抑制する
目的でビスマスを添加したものを、真空インタラプタの
電極行事として使用することが試みられている。In recent years, copper-chromium materials, which have excellent current interrupting performance, with bismuth added in order to suppress the increase in contact resistance after current interrupting, have been used as electrodes for vacuum interrupters. An attempt is being made to do so.
従来、このビスマスを添加した銅−クロｊ系の電極材料
の製造方法としては、銅とり［ムとビスマスとの混合粉
末を一括して焼結づるようにしたものや、容器内に充填
されたりロムとビスマスとの混合粉末上に銅塊を載Ｗし
、これらを非酸化性雰囲気にて銅の融点り上に加熱し、
クロム及びビスマスの空隙部引に銅塊を溶浸させるよう
にしたもの、或い（」予め焼結された銅とクロムとから
なる多孔πの溶浸母材の空隙部分にビスマスを溶浸さ千
るようにしたもの等が知られている。Conventionally, the methods for manufacturing copper-chromium-based electrode materials to which bismuth has been added include sintering a mixed powder of copper and bismuth all at once, or filling it in a container. A copper ingot is placed on a mixed powder of ROM and bismuth, and heated to above the melting point of copper in a non-oxidizing atmosphere.
A method in which copper ingots are infiltrated into the voids of chromium and bismuth, or a method in which bismuth is infiltrated into the voids of a porous infiltration base material made of pre-sintered copper and chromium. There are known devices that have been designed to
なお、ビスマスを添加した銅−クロム系Ｃ電極材料の組
成として一般的には、銅が２から９８重ｆ％の範囲、ク
ロムが２から８重量％の範囲、ビスマスが０．１から１
５重τ％の範囲に調整されている。Generally, the composition of copper-chromium C electrode material to which bismuth is added is copper in the range of 2 to 98% by weight, chromium in the range of 2 to 8% by weight, and bismuth in the range of 0.1 to 1% by weight.
It is adjusted to a range of 5 times τ%.
Ｄ、発明が解決しようとする課題
ビスマスを添加した銅−クロム系の金属材料に対する従
来の製造方法の内、銅とクロムとビスマスとの混合粉末
を一括して焼結するようにした方法及びクロム及びビス
マスの空隙部分に銅塊を溶浸さぜるようにした方法では
、ビスマスは蒸気圧が高くて融点が低いことから、銅塊
を溶浸させる加熱工程において銅よりも融点の低いビス
マスの蒸発量が非常に多く、一つの容器内で製造される
電極材料中のビスマスの分布が著しく不均一となって製
品の均質性を損なう虞がある上、電極材料中に占めるビ
スマスの割合を設計通りに保つことが困難である。D. Problems to be Solved by the Invention Among the conventional manufacturing methods for copper-chromium based metal materials added with bismuth, a method in which a mixed powder of copper, chromium and bismuth is sintered all at once, and chromium In the method of infiltrating the copper ingot into the voids of bismuth, since bismuth has a high vapor pressure and a low melting point, bismuth, which has a lower melting point than copper, evaporates during the heating process to infiltrate the copper ingot. The amount of bismuth in the electrode material is extremely large, and the distribution of bismuth in the electrode material manufactured in one container may become extremely uneven, impairing the homogeneity of the product. difficult to maintain.
一方、銅とクロムとの焼結体の空隙部分にビスマスを溶
浸させるようにした方法では、−ト述の如き不具合はな
いものの、所定量のビスマスを含有する電極材料を製造
するためには、銅とクロムとの焼結体の空隙率の調整が
極めて重要となる。しかし、従来の方法では銅とクロム
との焼結体を所望の空隙率に調整することが非常に難し
いことに加え、一つの焼結体内での空隙率のばらつきも
多いことから、電極材料中のビスマスの分布が不均一と
なって、製品の均質性を損なう虞があった。On the other hand, the method of infiltrating bismuth into the voids of a sintered body of copper and chromium does not have the problems mentioned above, but it is difficult to manufacture an electrode material containing a predetermined amount of bismuth. , it is extremely important to adjust the porosity of the sintered body of copper and chromium. However, with conventional methods, it is very difficult to adjust the porosity of a sintered body of copper and chromium to the desired porosity. There was a risk that the distribution of bismuth would become uneven, impairing the homogeneity of the product.
Ｅ０課題を解決するための手段
本発明による電極材料の製造方法は、銅よりも高融点の
スケルトンを構成する高融点金属の粉末を容器内に収め
、この粉末上に容器の蓋が浮き上がるように銅とこの銅
よりも低融点の低融点金属との合金及び銅塊を載置し、
これらを非酸化性雰囲気にて銅の融点以上に加熱保持し
、前記銅と低融点金属との合金及び前記銅塊が前記高融
点金属の空隙部分に溶浸する途中で前記容器内が蓋で密
封されるようにしたことを特徴とするものである。Means for Solving the E0 Problem The method for manufacturing an electrode material according to the present invention is to place powder of a high melting point metal constituting the skeleton, which has a higher melting point than copper, in a container, and to raise the lid of the container on top of the powder. An alloy of copper and a low-melting point metal having a lower melting point than this copper and a copper ingot are placed,
These are heated to a temperature higher than the melting point of copper in a non-oxidizing atmosphere, and while the alloy of copper and low melting point metal and the copper ingot are infiltrating into the voids of the high melting point metal, the inside of the container is closed with a lid. It is characterized by being sealed.
なお、前記高融点金属としてはクロム等を挙げることが
できる。又、前記低融点金属としてはビスマス等を挙げ
ることができる。ここで、高融点金属としてクロムを採
用すると共に低融点金属としてビスマスを採用したもの
において、銅が２０重量％未満の場合には、導電率が低
下して発熱量が多くなり、逆に銅が９８重量％を越える
と耐溶着性の低下や電流さい断値の増大をもたらす。又
、クロムが２重景％未満の場合には、電流さい断値・が
増大し、逆にクロムが８０重量％を越える場合には、電
流遮断性能が低下してしまう。一方、ビスマスが０．１
重量％未満の場合には、電流遮断後の接触抵抗値を抑制
する効果が薄れてしまい、逆にビスマスが１重景％を越
えると、耐電圧特性等の真空インタラプタとしての性能
に悪影響を及ぼす。In addition, chromium etc. can be mentioned as said high melting point metal. Moreover, bismuth etc. can be mentioned as said low melting point metal. Here, in a product that uses chromium as a high melting point metal and bismuth as a low melting point metal, if the copper content is less than 20% by weight, the electrical conductivity will decrease and the calorific value will increase; If it exceeds 98% by weight, the welding resistance will decrease and the current cutoff value will increase. Further, if the chromium content is less than 2% by weight, the current interrupting value increases, and if the chromium content exceeds 80% by weight, the current interrupting performance decreases. On the other hand, bismuth is 0.1
If the bismuth content is less than 1% by weight, the effect of suppressing the contact resistance value after current interruption will be diminished, and if the bismuth content exceeds 1% by weight, it will have a negative effect on the performance as a vacuum interrupter such as withstand voltage characteristics. .
従って、高融点金属としてクロムを採用すると共に低融
点金属としてビスマスを採用したものにおいては、銅は
２０から９８重量％の範囲、クロムは２から８０重量％
の範囲、ビスマスは０．１から１重量％の範囲にそれぞ
れあることが望ましい。Therefore, in a product that uses chromium as a high melting point metal and bismuth as a low melting point metal, copper is in the range of 20 to 98% by weight, and chromium is in the range of 2 to 80% by weight.
The content of bismuth is preferably in the range of 0.1 to 1% by weight.
Ｆ６作用
銅と低融点金属との合金中に占める低融点金属の一部は
、銅の結晶粒中に固溶している。F6 action A part of the low melting point metal in the alloy of copper and low melting point metal is dissolved in solid solution in the copper crystal grains.
固溶限界を越えた低融点金属は銅の結晶粒界に析出する
が、この析出状態の低融点金属は合金表面のみならず合
金内部にも当然存在する。A low melting point metal that exceeds the solid solution limit precipitates at the grain boundaries of copper, but naturally this precipitated low melting point metal exists not only on the alloy surface but also inside the alloy.
このような状態の銅と低融点金属との合金を銅塊と共に
高融点金属の粉末上に載置してこれらを加熱すると、銅
と低融点金属との合金から低融点金属が蒸発するのは、
銅の結晶粒界に沿ってこの銅と低融点金属との合金の表
面からだけとなり、銅と低融点金属との合金中の鋼が溶
けるまでは、低融点金属の蒸発が抑制された状態となる
。When an alloy of copper and a low melting point metal in such a state is placed on a powder of a high melting point metal along with a copper ingot and heated, the low melting point metal will evaporate from the alloy of copper and a low melting point metal. ,
The evaporation of the low melting point metal is suppressed until the steel in the alloy of copper and the low melting point metal is melted along the grain boundaries of the copper and only from the surface of the alloy of copper and the low melting point metal. Become.
この加熱操作に伴って、高融点金属の粉末の空隙部分か
らガスが放出されて容器とその蓋との隙間から外部に放
出され、高融点金属の空隙部分に銅とビスマスとが溶浸
して行く。Along with this heating operation, gas is released from the voids in the high melting point metal powder and is released from the gap between the container and its lid, and copper and bismuth infiltrate into the voids of the high melting point metal. .
そして、銅と低融点金属とが高融点金属の空隙部分に溶
浸して行く途中で、容器内が蓋で密閉される結果、低融
点金属の蒸発飛散が更に防止された状態となる。Then, while the copper and the low melting point metal are infiltrating into the voids of the high melting point metal, the inside of the container is sealed with a lid, which further prevents the low melting point metal from evaporating and scattering.
Ｇ、実施例
真空インタラプタは、その概略構造の一例を表す第３図
に示すようなものであり、相互に一直線状をなす一対の
リード棒１１，１２の対向端面には、それぞれ電極１３
．１４が一体的に設けである。これら電極１３．１４を
囲む筒状のシールド１５の外周中央部は、このシールド
１５を囲む一対の絶縁筒１６゜１７の間に挟まれた状態
で保持されている。G. Embodiment The vacuum interrupter is as shown in FIG. 3, which shows an example of its schematic structure, and electrodes 13 are provided on opposing end surfaces of a pair of lead rods 11 and 12 that are in a straight line with each other.
．． 14 is integrally provided. A central portion of the outer periphery of a cylindrical shield 15 surrounding these electrodes 13 and 14 is held between a pair of insulating cylinders 16 and 17 surrounding this shield 15.
一方の前記リード棒１１は、一方の絶縁筒１６の一端に
接合された金属端板１８を気密に貫通した状態で、この
金属端板１８に一体的に固定されている。図示しない駆
動装置に連結される他方のり一ド棒１２は、他方の絶縁
筒１７の他端に気密に接合された他方の金属端板１９に
ベローズ２０を介して連結され、駆動装置の作動に伴っ
て電極１３．１４の対向方向に往復動可能に可動側の電
極１４が固定側の電極１３に対して開閉動作するように
なっている。One of the lead rods 11 is integrally fixed to the metal end plate 18 joined to one end of the insulating tube 16 while airtightly passing through the metal end plate 18 . The other glue rod 12, which is connected to a drive device (not shown), is connected via a bellows 20 to the other metal end plate 19, which is hermetically joined to the other end of the other insulating tube 17. Accordingly, the movable electrode 14 is configured to open and close with respect to the fixed electrode 13 so as to be able to reciprocate in the opposite direction of the electrodes 13 and 14.
前記電極１３．１４は、クロム（Ｃｒ）と、銅（Ｃｕ）
と、これらクロムと銅との界面に分散するビスマス（Ｂ
ｉ）とからなる複合金属で構成される。The electrodes 13.14 are made of chromium (Cr) and copper (Cu).
and bismuth (B) dispersed at the interface between these chromium and copper.
i) It is composed of a composite metal consisting of.
本発明によるこの電極材料の製造方法の一例を第１図に
基づいて以下に記すと、まず５Ｘ １０−’Ｔｏｒｒの
真空溶解炉にて銅を１１００℃に溶融させ、所定量のビ
スマスを銅の溶湯中に添加してこれらを攪拌した後、冷
却してビスマスを０．５重量％含む銅ビスマス合金Ａを
得る。An example of the manufacturing method of this electrode material according to the present invention will be described below based on FIG. After adding them to the molten metal and stirring them, they are cooled to obtain a copper-bismuth alloy A containing 0.5% by weight of bismuth.
一方、−１００メツシユの粒度のクロムの粉末Ｂを内径
６８ｍｍのアルミナセラミックス製の容器Ｃに１７０ｇ
入れ、このクロムの粉末Ｂの上に１７０ｇの上述した銅
ビスマス合金へを載置し、更にこの銅ビスマス合金Ａの
上に直径が２０印で長さが３０市の銅の丸棒りを二本立
設し、更にこの上に容器Ｃの蓋Ｅを載せ、容器Ｃの上端
とこの蓋Ｅとの隙間を０、８ ｍに設定した。On the other hand, 170 g of chromium powder B with a particle size of -100 mesh was placed in a container C made of alumina ceramics with an inner diameter of 68 mm.
Place 170 g of the above-mentioned copper-bismuth alloy on top of this chromium powder B, and then place two copper round rods with a diameter of 20 marks and a length of 30 mm on top of this copper-bismuth alloy A. The lid E of the container C was placed on top of the container C, and the gap between the upper end of the container C and the lid E was set to 0.8 m.
しかるのち、これらを５ ｘ ｌ Ｏ−５Ｔｏｒｒの真
空炉内にて脱ガスしつつ１１００℃に１時間加熱処理し
、クロムの粉末Ｂの空隙部分に銅及びビスマスを溶浸さ
せ、得られる電極材料を容器Ｃから出して直径６０ｍｎ
で厚さが１０口の円板状に機械加工した。Thereafter, these were heat-treated at 1100°C for 1 hour while being degassed in a 5 x l O-5 Torr vacuum furnace, and copper and bismuth were infiltrated into the voids of chromium powder B to obtain an electrode material. Take it out from container C and have a diameter of 60 mm.
It was machined into a disk shape with a thickness of 10 holes.
このようにして、 （：ｕ：５５．００重量％ Ｃｒ：４４．７５重量％ Ｂｉ：０．２５重量％ からなる電極材料を作成した。In this way, (:u:55.00% by weight Cr: 44.75% by weight Bi: 0.25% by weight An electrode material consisting of
この方法によって、合計で２５の試料を作成し、電極材
料中に占めるビスマスの割合を調査した結果、ビスマス
の割合の平均値が０６２５重量％てその標準偏差が０．
０２％となり、ビスマスの割合のばらつきが非常に小さ
いことが判明した。ヌ、容器Ｃから取り出した２５の試
料には、銅及びビスマスの溶浸が不十分となるために発
生する微細な空隙、い才っゆる巣がほとんど認められな
かっブこ。Using this method, a total of 25 samples were prepared and the ratio of bismuth in the electrode material was investigated. As a result, the average value of the ratio of bismuth was 0,625% by weight, and the standard deviation was 0.
It was found that the variation in the proportion of bismuth was very small. In the 25 samples taken from container C, there were almost no microscopic voids or cavities that occur due to insufficient infiltration of copper and bismuth.
なお、本実施例では銅ビスマス合金へをクロムの粉末Ｂ
上に直接載せるようにしたが、本発明による電極材料の
製造方法の他の一例を表す第２図に示すように、容器Ｃ
内に装入されたクロｔ、の粉末Ｂ、ｌに銅塊Ｆを載せ、
この銅塊Ｆの上に銅ビスマス合金Ａと銅の丸擦りとを重
ね、この銅の丸棒りによってＭＥを容器Ｃから浮き上が
らせ、この状態から加熱作業を開始するようにしても良
い。In this example, chromium powder B was added to the copper-bismuth alloy.
However, as shown in FIG. 2, which shows another example of the method for manufacturing an electrode material according to the present invention, the container C
Place the copper ingot F on the black powder B and l charged in the container,
Copper-bismuth alloy A and a copper round scraper may be placed on top of this copper ingot F, and the ME will be lifted out of the container C by the copper round rod, and the heating operation may be started from this state.
Ｈ０発明の効果
本発明の電極材料の製造方法によると、スケルトンを構
成する高融点金属の粉末の上に容器の蓋が浮き上がるよ
うに銅と低融点金属との合金及び銅塊を載置し、これら
を加熱して銅ど低融点金属との合金及び銅塊が高融点金
属の空隙部分に溶浸する途中で前記容器内が蓋で密封さ
れるようにしまたので、高融点金属の粉末から発生する
ガスを円滑に抜くことができ、巣の発生を未然に防止で
きると共に低融点金属の蒸発量を従来の方法よりも抑制
することが可能となり、電極材料中の低融点金属の分布
が均一どなって製品の均質性が向上し、電極材料中に占
める低融点金属の割合を設計通りに保つことができる。H0 Effects of the Invention According to the method for manufacturing an electrode material of the present invention, an alloy of copper and a low melting point metal and a copper ingot are placed so that the lid of the container is raised on top of the high melting point metal powder constituting the skeleton, By heating these, the inside of the container is sealed with a lid while the alloy with low melting point metal such as copper and the copper ingot are infiltrated into the voids of the high melting point metal. This makes it possible to smoothly remove the gas, prevent the formation of cavities, and suppress the amount of evaporation of low-melting point metals compared to conventional methods, ensuring a uniform distribution of low-melting point metals in the electrode material. This improves the homogeneity of the product and allows the proportion of low melting point metal in the electrode material to be maintained as designed.
この結果、電流遮断後における接触抵抗値や電流遮断性
能等の特性が全体的に向上した電極材料を得ることがで
きる。特に、多数回の開閉操作後でも接触抵抗値が低（
安定しているため、開閉のための操作装置を小形化で４
゜
きるど共に発熱が少ないことと相俟ってキ、−ビクルを
小形化できる。As a result, it is possible to obtain an electrode material that has overall improved characteristics such as contact resistance value and current interrupting performance after current interrupting. In particular, the contact resistance value is low even after many opening and closing operations (
Because it is stable, the operating device for opening and closing can be made smaller and 4
Coupled with the fact that both the vehicle and the vehicle generate less heat, the vehicle can be made smaller.
又、銅と低融点金属との合金の他に銅塊を用意するよう
にしたので、銅と低融点金属との合金のみを用いる場合
と比較すると、銅と低融点金属との合金の使用量を少な
くすることができ、生産性の向上に伴う製造コストの低
減を企図し得る。In addition, since we prepared a copper ingot in addition to the alloy of copper and a low-melting point metal, the amount of alloy of copper and a low-melting point metal used was reduced compared to the case where only an alloy of copper and a low-melting point metal was used. Therefore, it is possible to reduce manufacturing costs due to improved productivity.
第１図は本発明による電極材料の製造方法の一実施例を
表す断面図、第２図は本発明による電極材料の製造方法
の他の一実施例を表す断面図、第３図は真空インタラプ
タの一例を表す断面図である。
又、図中の符号でＡは銅ビスマス合金、Ｂはクロムの粉
末、Ｃは容器、Ｄは銅の丸棒、Ｅは蓋、Ｆは銅塊、１１
．１２はり一ド棒、１３，１は電極である。
第
図
第
図
［：蒼FIG. 1 is a sectional view showing one embodiment of the method for producing an electrode material according to the present invention, FIG. 2 is a sectional view showing another embodiment of the method for producing an electrode material according to the present invention, and FIG. 3 is a sectional view showing a vacuum interrupter. It is a sectional view showing an example. Also, in the symbols in the figure, A is a copper-bismuth alloy, B is a chromium powder, C is a container, D is a copper round bar, E is a lid, F is a copper ingot, 11
．． 12 is a rod, and 13 and 1 are electrodes. Fig. Fig. [:Ao]
Claims (3)
属の粉末を容器内に収め、この粉末上に容器の蓋が浮き
上がるように銅とこの銅よりも低融点の低融点金属との
合金及び銅塊を載置し、これらを非酸化性雰囲気にて銅
の融点以上に加熱保持し、前記銅と低融点金属との合金
及び前記銅塊が前記高融点金属の空隙部分に溶浸する途
中で前記容器内が蓋で密封されるようにしたことを特徴
とする電極材料の製造方法。(1) Powder of a high-melting point metal that makes up the skeleton, which has a higher melting point than copper, is placed in a container, and an alloy of copper and a low-melting point metal that has a lower melting point than copper is placed in a container so that the lid of the container is raised above the powder. and a copper ingot, and heat and maintain these in a non-oxidizing atmosphere above the melting point of copper, so that the alloy of the copper and the low melting point metal and the copper ingot infiltrate into the void portion of the high melting point metal. A method for manufacturing an electrode material, characterized in that the inside of the container is sealed with a lid during the process.
項（１）に記載した電極材料の製造方法。(2) The method for manufacturing an electrode material according to claim (1), wherein the high melting point metal is chromium.
求項（１）に記載した電極材料の製造方法。(3) The method for producing an electrode material according to claim (1), wherein the low melting point metal is bismuth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26308190A JPH04141925A (en) | 1990-10-02 | 1990-10-02 | Manufacture of electrode material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26308190A JPH04141925A (en) | 1990-10-02 | 1990-10-02 | Manufacture of electrode material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04141925A true JPH04141925A (en) | 1992-05-15 |
Family
ID=17384573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26308190A Pending JPH04141925A (en) | 1990-10-02 | 1990-10-02 | Manufacture of electrode material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04141925A (en) |
-
1990
- 1990-10-02 JP JP26308190A patent/JPH04141925A/en active Pending
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