JPH04149100A - Method for joining synthetic single crystal body - Google Patents
Method for joining synthetic single crystal bodyInfo
- Publication number
- JPH04149100A JPH04149100A JP27298190A JP27298190A JPH04149100A JP H04149100 A JPH04149100 A JP H04149100A JP 27298190 A JP27298190 A JP 27298190A JP 27298190 A JP27298190 A JP 27298190A JP H04149100 A JPH04149100 A JP H04149100A
- Authority
- JP
- Japan
- Prior art keywords
- synthetic single
- single crystals
- joining
- visible light
- optically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、構造要素が定まった配列をもつ主成分が同じ
か若しくは異なる同晶系又は異晶系の合成単結晶体を接
合し更にこれらを積層した集積接合に係る合成単結晶体
の接合方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to bonding homocrystalline or heterocrystalline synthetic single crystals in which the main components are the same or different, and which have a fixed arrangement of structural elements. The present invention relates to a method of joining synthetic single crystals, which involves integrated joining of laminated materials.
従来、多結晶或いは単結晶相互の接合方法は、その結晶
と同質若しくは異質の接合剤を、各々結晶相互の境界面
に、媒介若しくは触媒とし、加熱することによって焼結
若しくは溶着する間接的な接合方法と、気相、液相から
成長(growth) した単結晶基板上に、なんらか
の方法で合成単結晶体を育成(epitaxy)させる
直接的な方法であった。Conventionally, the method of joining polycrystals or single crystals to each other has been indirect joining in which a binding agent of the same or different nature as the crystal is used as a mediator or catalyst at the interface between the crystals and sintered or welded by heating. This method was a direct method in which a synthetic single crystal was grown (epitaxy) by some method on a single crystal substrate grown from a gas phase or a liquid phase.
従って、前述した間接的な接合方法は、結晶相互の境界
面になんらかの人工的な媒体、例えば接着剤等を介すこ
とになるので各々の結晶自体がもっている化学的、物理
的、光学的にすぐれた特徴を生かすことは不可能である
。Therefore, the above-mentioned indirect bonding method involves using some kind of artificial medium, such as an adhesive, at the interface between the crystals, so that the chemical, physical, and optical properties of each crystal itself are It is impossible to take advantage of superior characteristics.
また、後述した直接的な接合方法には、単結晶基板上に
、多結晶を育成させるものと単結晶を育成させるものと
に分けられる。多結晶の場合は晶系がないので比較的簡
単であるが、単結晶の場合は晶系があり、主成分が同じ
5in2で同晶系の六方晶系であるので例えば無色と着
色の水晶単結晶であれば、格子定数も線膨脹係数も、は
ぼ近いので容易に育成させられると考えられる。しかし
、軸方向性によって物理的性質を異にするので育成は難
しい。また主成分がA1aO+とSiとでは異なり、異
晶系は六方晶系と等結晶系であるからサファイアとシリ
コンの育成は、格子定数も、線膨脹係数も、また軸方向
性ば著しく相違しているので不可能にちかく、さらにま
た、主成分が同じか若しくは異なる同晶系又は異晶系で
ある無色と着色の水晶単結晶とサファイアとシリコンの
合成単結晶体を積層接合させるのは不可能である。Further, the direct bonding methods described below are divided into those that grow polycrystals on a single crystal substrate and those that grow single crystals. In the case of polycrystals, it is relatively simple because there is no crystal system, but in the case of single crystals, there is a crystal system, and the main components are the same 5 in 2 and are hexagonal crystal systems, so for example, colorless and colored quartz single crystals. If it is a crystal, the lattice constant and linear expansion coefficient are similar, so it is thought that it can be easily grown. However, it is difficult to grow because the physical properties differ depending on the axial orientation. In addition, the main components are different between A1aO+ and Si, and the anomalous system is a hexagonal system and an equicrystalline system, so the growth of sapphire and silicon requires significant differences in lattice constant, coefficient of linear expansion, and axial orientation. Furthermore, it is impossible to stack and bond colorless and colored quartz single crystals whose main components are the same or different, which are homocrystalline or heterocrystalline, and synthetic single crystals of sapphire and silicon. It is.
本発明は上述の問題を解決して、容易に所望の合成単結
晶体の積層結合を行うことを課題とする。It is an object of the present invention to solve the above-mentioned problems and easily perform stacking and bonding of desired synthetic single crystals.
本発明は上記の課題を解決するためになされたもので、
主成分が同じか若しくは主成分が異なる同晶系又は異晶
系の合成単結晶が有する波長領域内でいずれも可視光を
透過するか又はいずれかが可視光を透過する各々相互の
面を物理的性質が類似するように切削した類似面を光学
研磨して光学的接着させ、全体を均一に加熱徐冷するか
、或いは反復加熱徐冷することによって光学的接着面に
界面反応を起こさせ、各々相互のもとの構造要素を損な
うことなく主成分が同じか若しくは異なる同晶系又は異
晶系の合成単結晶体を接合させてなる方法である。The present invention was made to solve the above problems,
Both homocrystalline or heterocrystalline synthetic single crystals with the same or different principal components transmit visible light within the wavelength range, or each mutual surface that transmits visible light is physically Similar surfaces cut to have similar physical properties are optically polished to form an optical bond, and the entire surface is uniformly heated and slowly cooled, or by repeated heating and slow cooling, an interfacial reaction is caused on the optically bonded surface. This is a method of joining homocrystalline or heterocrystalline synthetic single crystals having the same or different main components without damaging their original structural elements.
結晶は、内部と表面とでは結晶構造を異にする。 A crystal has a different crystal structure between the inside and the surface.
結晶の内部は原子が規則正しく配列し、三次元的な骨組
みから構成されて「結晶軸C」を含む三本の軸の間の3
つの角を「軸角α、β、T」といい、その長さの比を[
輸率a、bSCJという。結晶を形づくっている原子や
分子の間には結合力が働いている。結合する力は、その
性質に従い、イオン結合、共有結合、金属結合、ファン
・デル・ワールス結合などに分けられるが、これらの結
合力の存在のために、原子や分子は、格子状に規則正し
く配列して結晶を形づくり、結晶系によりそれぞれ固有
の結晶構造をもっている。しかし、結晶の表面は内部と
は相当に異なった配列をしており表面層は内部で見られ
るような結晶構造からかなり歪んだ原子配列となってい
る。このような状態は非常に不安定な状態であくから、
温度を上げると種々に構造が変化し、化学反応が非常に
起こりやすい。The inside of a crystal consists of a three-dimensional framework in which atoms are arranged regularly, and three axes, including the "crystal axis C", are arranged in a regular manner.
The two angles are called "axial angles α, β, T", and the ratio of their lengths is [
The transport numbers a and b are called SCJ. Bonding forces act between the atoms and molecules that make up the crystal. Bonding forces can be divided into ionic bonds, covalent bonds, metallic bonds, van der Waals bonds, etc. according to their properties, but due to the existence of these bonding forces, atoms and molecules are arranged regularly in a lattice. Each crystal system has its own unique crystal structure. However, the surface of the crystal has a considerably different arrangement from the interior, and the surface layer has an atomic arrangement that is considerably distorted from the crystalline structure found inside. This situation is extremely unstable, so
When the temperature is raised, the structure changes in various ways, and chemical reactions are very likely to occur.
結晶は他の液体や非晶質と比べてはっきりと区別される
性質は方向性であり、同軸に平行な方向と垂直な方向と
では、物理的性質を異にする異方性を持っている。A property that clearly distinguishes crystals from other liquids and amorphous materials is their orientation, and they have anisotropy, which means that their physical properties differ in directions parallel to and perpendicular to the same axis. .
このような結晶構造と異方性をもっている合成単結晶体
の接合を可能にし解決するには、上述したように結晶表
面層の変化性と、結晶系が有する結晶体の切削方向を変
えることによって選べる類似面と、また切削と研磨とい
う外からの影響によって、その加工面に人工的な不安定
の状態を作ること等で、合成単結晶体の接合を目的とし
たこのいくつかの誘導要因を生じることができる。In order to enable and solve the problem of joining synthetic single crystals with such a crystal structure and anisotropy, as mentioned above, it is necessary to change the variability of the crystal surface layer and the cutting direction of the crystal body of the crystal system. By creating an artificially unstable state on the machined surface by selecting similar surfaces and by external influences such as cutting and polishing, we can overcome some of these inducing factors for the purpose of joining synthetic single crystals. can occur.
上述のように、上記類似面にかなり不安定の状態を作る
ことができ、最終的には徐々に加熱することによって各
々相互の合成単結晶体の境界面に界面反応が起こり、徐
々に冷却とともに化学結合する。As mentioned above, a fairly unstable state can be created on the similar surfaces, and eventually, by gradual heating, an interfacial reaction occurs at the interface of each synthetic single crystal, and as it gradually cools, chemically bond.
従って、従来の方法では不可能であった結合が不可能と
なり複雑で精密な新たな主成分が同じか若しくは異なる
同晶系又は異晶系の合成単結晶体の接合が得られる。Therefore, bonding which was impossible with conventional methods becomes impossible, and a new complex and precise bonding of homocrystalline or heterocrystalline synthetic single crystals having the same or different main components can be obtained.
実施例をあげる前に光学的接着について説明する。 Before giving examples, optical adhesion will be explained.
光学的接着は、すでに、非晶質(amorphous)
であるガラス加工の技術としては公知である。Optical adhesion is already amorphous
This glass processing technology is well known.
本発明における合成単結晶体の光学接着とは、第1に主
成分が同じか若しくは異なる同晶系又は異晶系の合成単
結晶体を接合するにはいずれも若しくはいずれかが可視
光を透過すること。Optical adhesion of synthetic single crystals in the present invention refers to, firstly, in order to bond synthetic single crystals of homocrystalline or heterocrystalline systems with the same or different main components, either or all of them must transmit visible light. to do.
第2に接着させる相互の光学研磨面は高精度(λ/10
<、λ=6328A)であること。Second, the mutual optically polished surfaces to be bonded have high precision (λ/10
<, λ=6328A).
第3に接着させる相互の境界面にゴミ、チリ等の微粒子
を介入させぬこと。Thirdly, do not allow fine particles such as dirt or dust to interfere with the mutual interface to be bonded.
第4に接着させる相互の合成単結晶体がいずれも若しく
はいずれかが可視光を透過するから相互の界面の干渉色
を直接目視することができ、上から加圧するだけで次第
に干渉色が消えて光学的接着が確認できることが必要で
ある。Fourth, since both or any of the mutually bonded single crystals transmit visible light, the interference color at the mutual interface can be directly observed, and the interference color gradually disappears just by applying pressure from above. It is necessary that optical adhesion can be confirmed.
実施例1
無色と着色の水晶単結晶の主成分が同じ同晶系接合につ
いて一例を挙げる。Example 1 An example will be given of a homocrystalline junction in which the main components of colorless and colored quartz single crystals are the same.
主成分(Sin2)と結晶系(六方晶系)を同じくし、
可視光(波長4000人〜7000A)を透過(透過率
90%く)する合成単結晶体(無色の水晶単結晶)と、
可視光を半減しか透過(透過率50%<)シない合成単
結晶体(着色の水晶単結晶)の相互の面を物理的性質が
類似(同軸、同軸角に一致)するように切削した類似面
(同軸面)を光学研磨(面精度λ/10<、 λ=6
328A) して上述したように光学的接着させ、全体
を均一に反復加熱(例えば常温から徐々に12時間、転
移点=573℃未満480℃まで加熱し、そのままで6
時間持続し、徐々に12時間で徐冷し常温にもどし、再
び転移点以上600℃にて加熱徐冷する時間的経過は前
記と同様に反復加熱)する。The main component (Sin2) and crystal system (hexagonal system) are the same,
A synthetic single crystal (colorless crystal single crystal) that transmits visible light (wavelength: 4000~7000A) (transmittance 90%);
A synthetic single crystal (colored crystal single crystal) that transmits only half of the visible light (transmittance <50%), whose surfaces are cut so that their physical properties are similar (coaxial, coaxial angles match). Optical polishing of the surface (coaxial surface) (surface accuracy λ/10<, λ=6
328A) to optically bond as described above, and uniformly and repeatedly heat the whole body (for example, gradually heat from room temperature to 480 °C below the transition point of 573 °C for 12 hours, and then leave it as it is for 6 hours.
The temperature is maintained for 12 hours, gradually cooled down to room temperature, heated again at 600° C. above the transition point, and then cooled down repeatedly in the same manner as described above.
光学的接着した相互の合成単結晶体の光学研磨した類似
面の結晶構造層は、先に切削によって著しく破壊され、
次に研磨によってかなり歪んだ原子配列となっている。The crystal structure layer of the optically polished similar planes of the optically bonded mutually synthesized single crystals was first significantly destroyed by cutting;
Next, due to polishing, the atomic arrangement is considerably distorted.
このような状態は非常に不安定な状態であるから、温度
を徐々に上げると種々に結晶構造が変化し、境界面に界
面反応が起こり、温度を徐々に下げるとともに安定して
化学結合する。Such a state is extremely unstable, so when the temperature is gradually raised, the crystal structure changes in various ways, interfacial reactions occur at the interface, and as the temperature is gradually lowered, stable chemical bonds form.
実施例2
サファイアとシリコンの主成分が異なる異品接合につい
て一例を挙げる。Example 2 An example will be given of joining of different products whose main components are sapphire and silicon.
主成分がAhO3で結晶系は六方晶系で、可視光を透過
する合成単結晶体くサファイア)と、主成分がSiで結
晶系は等結晶系である可視光を透過をしない合成単結晶
体(シリコン)の相互の面を類似させる方法について説
明する。A synthetic single crystal (sapphire) whose main component is AhO3 and a hexagonal crystal system that transmits visible light; and a synthetic single crystal whose main component is Si and whose crystal system is equicrystalline that does not transmit visible light. A method of making mutual surfaces of (silicon) similar will be explained.
サファイア単結晶の物理的性質は軸方向によって異にし
、C軸に平行//な方向と、C軸に垂直上な方向とでは
//≠土、その線膨脹係数は、C軸に平行な方向の線膨
脹係数(10−5/deg )0.67(50℃、//
c、)
C軸に垂直な方向の線膨脹係数(10−’/deg )
0.50(50℃、IC,)
である。一方、等結晶系であるシリコン結晶の物理的性
質は軸//=土方内方向って異にすることはなく、その
線膨脹係数は、
線膨脹係数(10〜’/deg) 0.50 (50℃
、//C,、=IC,)である。The physical properties of a sapphire single crystal differ depending on the axial direction, and the linear expansion coefficient is different in the direction parallel to the C-axis and in the direction perpendicular to the C-axis. Linear expansion coefficient (10-5/deg) 0.67 (50℃, //
c,) Linear expansion coefficient in the direction perpendicular to the C axis (10-'/deg)
0.50 (50°C, IC,). On the other hand, the physical properties of silicon crystal, which is an equicrystalline system, do not differ depending on the axis //= Hijikata inner direction, and its linear expansion coefficient is as follows: Linear expansion coefficient (10~'/deg) 0.50 ( 50℃
, //C,,=IC,).
従って、サファイア単結晶とシリコン結晶の物理的性質
を共有する類似面は、サファイア単結晶のC軸に垂直上
な方向の面である。このサファイアのC軸に垂直になる
ように切削した類似面とシリコンの類似面を光学研磨(
λ/10<、λ= 6328人)して上述したように光
学的接着させ、全体を均一に反復加熱(例えば常温から
徐々に8時間で400℃迄加熱し、そのままで8時間持
続し、徐々に14時間で徐冷し常温にもどし、再び43
0℃にて加熱徐冷する時間的経過は前記と同様に反復加
熱)することによって前例で上述したように同じく相互
の境界面に界面反応が起こり化学結合する。Therefore, a similar plane that shares the physical properties of a sapphire single crystal and a silicon crystal is a plane that is perpendicular to the C axis of the sapphire single crystal. The similar surface cut perpendicular to the C-axis of this sapphire and the similar surface of silicon are optically polished (
λ/10 <, λ = 6328 people) and optically bonded as described above, and the whole was uniformly and repeatedly heated (e.g., gradually heated from room temperature to 400°C in 8 hours, maintained as it was for 8 hours, and gradually Cool slowly for 14 hours, return to room temperature, and return to 43
By repeating the heating and slow cooling at 0° C. (repeated heating in the same manner as above), an interfacial reaction occurs at the mutual interface, resulting in chemical bonding, as described in the previous example.
実施例3
主成分が異なる同晶系又は異晶系接合し更に積層する実
施例について一例を挙げる。Example 3 An example will be given of an example in which homocrystalline or heterocrystalline systems having different main components are bonded and further laminated.
すでに実施例1にて同晶系接合されている無色の水晶単
結晶と着色の水晶単結晶(光学研磨済。Colorless quartz single crystal and colored quartz single crystal (optically polished) already homocrystal-bonded in Example 1.
λ/10<、 λ−6328人)を、実施例2にて異
晶系接合されているサファイア単結晶(光学研磨済。λ/10<, λ-6328 people) was anomalously joined in Example 2 to a sapphire single crystal (optically polished).
λ/1.0<、 λ−6328A)とシリコン結晶の
上に、積層して上述したように光学的接着させ、全体を
均一に反復加熱(例えば常温から徐々に8時間で400
℃迄加熱し、そのままで8時間持続し、徐々に14時間
で徐冷し常温にもどし、再び430℃にて加熱徐冷する
時間的経過は前記と同様に反復加熱)することによって
上述したように同じく、大方晶系である着色の水晶単結
晶と同系で六方晶系であるサファイア単結晶の境界面に
界面反応が起こり化学結合する。λ/1.0 <, λ-6328A) on top of the silicon crystal, optically bonded as described above, and uniformly heated the whole body repeatedly (for example, gradually heated to 400°C over 8 hours from room temperature).
℃, continued as it is for 8 hours, gradually cooled over 14 hours to return to room temperature, heated and slowly cooled again to 430℃ (the time course was repeated heating as above) as described above. Similarly, an interfacial reaction occurs at the interface between a colored quartz single crystal, which is an macrogonal system, and a sapphire single crystal, which is a hexagonal system.
以上の如く主成分が同じか若しくは異なる同晶系又は異
晶系の合成単結晶体の接合、積層、集積等を考えれば、
その組合せは本発明における範囲内で可能である。Considering the joining, stacking, accumulation, etc. of homocrystalline or heterocrystalline synthetic single crystals with the same or different main components as described above,
Combinations thereof are possible within the scope of the invention.
本発明により従来の方法では不可能であった主成分が同
じか若しくは異なる同晶系又は異晶系の合成単結晶体を
接合し、更にこれらを積層した集積接合が可能になり、
複雑で精密な形状の新たな合成単結晶体が得られるもの
である。The present invention makes it possible to join synthetic single crystals of homocrystalline or heterocrystalline systems in which the main components are the same or different, which was impossible with conventional methods, and to perform integrated bonding in which these are laminated.
A new synthetic single crystal with a complex and precise shape can be obtained.
Claims (5)
の合成単結晶が有する波長領域内でいずれも可視光を透
過するか又はいずれかが可視光を透過する各々相互の面
を物理的性質が類似するように切削した類似面を光学研
磨して光学的接着させ、全体を均一に加熱徐冷するか、
或いは反復加熱徐冷することによって光学的接着面に界
面反応を起こさせ、各々相互のもとの構造要素を損なう
ことなく主成分が同じか若しくは異なる同晶系又は異晶
系の合成単結晶体を接合させてなる合成単結晶体の接合
方法。(1) Synthetic single crystals of homocrystalline or heterocrystalline systems with the same or different principal components, both of which transmit visible light within the wavelength range, or whose mutual surfaces that transmit visible light are physically Similar surfaces cut to have similar physical properties are optically polished and optically bonded, and the whole is uniformly heated and slowly cooled, or
Alternatively, by repeatedly heating and slowly cooling, an interfacial reaction is caused on the optically bonded surface to produce a homocrystalline or heterocrystalline synthetic single crystal whose main components are the same or different, without damaging each other's original structural elements. A method for joining synthetic single crystals made by joining.
の合成単結晶体を積層し集積接合することを特徴とした
請求項第1項記載の合成単結晶体の接合方法。(2) The method for joining synthetic single crystals according to claim 1, characterized in that homocrystalline or heterocrystalline synthetic single crystals having the same or different main components are stacked and integrally joined.
の合成単結晶が有する波長領域内でいずれも可視光を透
過するか又はいずれかが可視光を透過することによって
各々相互の合成単結晶体の接合境界面を目視可能とした
ことを特徴とした請求項第1項、第2項記載の合成単結
晶体の接合方法。(3) Synthesis of homocrystalline or heterocrystalline systems in which the main components are the same or different. Either each transmits visible light within the wavelength range of the single crystal, or one of them transmits visible light, thereby synthesizing each other. 3. The method of joining synthetic single crystal bodies according to claim 1, wherein the joining interface of the single crystal bodies is made visible.
冷することを特徴とする請求項第1項乃至第3項記載の
合成単結晶体の接合方法。(4) A method for joining synthetic single crystals according to any one of claims 1 to 3, characterized in that the whole is uniformly heated and slowly cooled, or repeatedly heated and slowly cooled.
る合成単結晶体の各々相互の内、いずれか低い転移点未
満にて加熱徐冷するか又は転移点以上にて加熱徐冷をす
ることを特徴とする請求項第1項乃至第4項記載の合成
単結晶体の接合方法。(5) Uniformly heat the whole, and heat and slowly cool each of the synthetic single crystals with different main components or crystal systems below the transition point, whichever is lower, or heat and slowly cool above the transition point. 5. A method for joining synthetic single crystals according to claims 1 to 4, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27298190A JPH04149100A (en) | 1990-10-09 | 1990-10-09 | Method for joining synthetic single crystal body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27298190A JPH04149100A (en) | 1990-10-09 | 1990-10-09 | Method for joining synthetic single crystal body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04149100A true JPH04149100A (en) | 1992-05-22 |
Family
ID=17521487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27298190A Pending JPH04149100A (en) | 1990-10-09 | 1990-10-09 | Method for joining synthetic single crystal body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04149100A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1013802A1 (en) * | 1998-12-22 | 2000-06-28 | Japan cell Co., Ltd. | Method of joining synthetic corundum, method of manufacturing synthetic corundumcell, and corundum cell |
-
1990
- 1990-10-09 JP JP27298190A patent/JPH04149100A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1013802A1 (en) * | 1998-12-22 | 2000-06-28 | Japan cell Co., Ltd. | Method of joining synthetic corundum, method of manufacturing synthetic corundumcell, and corundum cell |
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