JPH04155261A - ultra high frequency probe needle - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] [Industrial Application Field] The second principle relates to a probing device for measuring the characteristics of high-frequency semiconductor elements, and particularly relates to an ultra-high-frequency probe needle for performing wafer blowing. .

[Conventional technology]

FIG. 6 is a block diagram showing an example of a conventional ultra-high frequency probe needle, and FIG. 7 fal is a perspective view showing a specific example of the ultra-high frequency probe needle of FIG. It is a bottom view of +a+ of the same figure.

In FIG. 6, 100 is an ultra-high frequency probe needle, and a coaxial receptacle 1 is connected to a high frequency measuring device (not shown).
1, coaxial/coplanar converter 13, and coplanar line 12
It consists of. Further, 101 is a device to be measured.

In FIG. 7, 11 is a coaxial receptacle using, for example, a 2.4 mm connector, 12 is a metal thin film (coplanar line), and 13 is a core wire 14 of the coaxial receptacle 11 and a signal line 15 of the coplanar line connected, and the coaxial This is a coaxial/coplanar conversion section configured so that the external conductor 17 of the receptacle 11 and the ground line 16 of the coplanar line 12 are connected.

The coplanar line 12 also includes a signal line 15 made of a metal thin film formed by gold plating on a blade 4 made of, for example, alumina ceramic, and a signal line 15 made of a metal thin film formed by a method such as gold plating.
and a ground line 16 made of a metal thin film formed by a method such as gold plating so as to sandwich the signal line 15 at a predetermined interval.

Further, the tip of the coplanar line 12 has a protruding metal bump 3.

Next, the operation will be explained.

A super high frequency signal from a high frequency measuring device (not shown) is transmitted through a coaxial cable to the coaxial receptacle 11 of the super high frequency probe needle 100 shown in FIG. and is transmitted to the coplanar line 12. Next, the ultra-high frequency signal propagated on the coplanar line 12 is applied to the input terminal of the device under test 101 through the metal bump 3 provided at the tip of the coplanar line 12.

[Invention or problem to be solved]

However, in the ultra-high frequency probe needle configured as described above, the ultra-high frequency signal passes through the coaxial cable and is transferred to the coaxial/coplanar converter 1 via the coaxial receptacle 11.
3, the loss in the millimeter wave band or higher on the coaxial cable is extremely large, and there is also loss in the coaxial receptacle 11 and the coaxial/coplanar converter 13,
The usable frequency is 60 GHz or less. For this reason, it has been impossible to measure the characteristics of high-frequency semiconductor devices on-wafer in a frequency band higher than this frequency band.

This invention was made in order to solve the above-mentioned problems, and provides an ultra-high frequency probe needle that can highly accurately measure the electrical characteristics of semiconductor devices at ultra-high frequencies above the millimeter wave band in the wafer state. The purpose is to provide

[Means for Solving the Problems] - An ultrahigh frequency probe needle according to the present invention includes a dielectric waveguide provided on a support member, a dielectric waveguide provided on the support member,
A slot line is provided, each having a metal bump at its tip and a pair of lines connected to the dielectric waveguide at the rear end side, and the connecting portion between the dielectric waveguide and the slot line is connected to a signal propagation moat. This is a conversion section.

[Effect]

In this invention, in the ultra-high frequency probe needle, a dielectric waveguide is used instead of a coaxial cable and a coaxial/coplanar conversion section that have large losses in the millimeter wave band or higher.
Since the configuration includes a slot line and a signal propagation mode converter between the two, it is possible to measure the electrical characteristics of a high frequency semiconductor element in a wafer state with high precision in the millimeter wave band of 60 GHz or higher.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a block diagram showing an ultra-high frequency probe needle according to an embodiment of the present invention. In the figure, reference numeral 200 denotes an ultra-high frequency probe needle, which is composed of a dielectric waveguide l connected to a high frequency measuring device (not shown), a dielectric waveguide/slot line converter 6, and a slot line 2. Further, 101 is a device to be measured.

FIG. 2 (at) is a perspective view of the probe needle according to the first embodiment of the present invention seen from the bottom, FIG. 2 (b) is a perspective view of the probe needle seen from the top, and FIG. It is a plan view from the upper surface of FIG. 2, and FIG. 3 (bl is a cross-sectional view taken along the line AA' of FIG. , for example, a blade made of alumina ceramic.

A dielectric waveguide 1 having a tapered portion on the tip side is embedded on the surface of the blade 4, and the rear end side is in contact with one side of the tapered portion of the dielectric waveguide l, For example, a pair of slot lines 2 made of a metal thin film is provided, and a metal bump 3 is provided at the tip of the slot line 2 by a method such as plating.

Next, the operation of this embodiment will be explained.

An ultra-high frequency signal from a high frequency measuring device (not shown) is transmitted through a dielectric waveguide 1 made of Teflon or the like having a tapered portion, as shown in FIGS. 2(a) and 3(b) and FIG. 3(a).

(b), which is an embodiment of the present invention, is transmitted to the ultra-high frequency probe needle, and the waveguide is The propagation mode is converted into the slot propagation mode and transmitted to the slot line 2.

Next, the ultra-high frequency signal propagated on the slot line 2 is applied to the input/output terminal of the device under test through the metal bump 3 provided at the tip of the slot line 2, and the device under test 10=fi! It is possible to evaluate the ultra-high frequency characteristics of

In this way, this example uses a dielectric waveguide and a slot line without using a coaxial cable, so it can handle 60G.
It is possible to transmit signals with low loss in the millimeter wave band of & above, and it is possible to measure the electrical characteristics of high-frequency semiconductor devices with high precision in the wafer state.

Further, FIG. 4(a) is a plan view of the second embodiment of the present invention viewed from above, and FIG. 4(b) is a sectional view taken along the line B--B'. In the figure, the dielectric waveguide/slot line conversion section 6 is fitted into the tapered portion of the dielectric waveguide 1 having a tapered portion on the tip side and on both sides of the tapered portion of the dielectric waveguide 1. It is constituted by a connecting portion with a pair of slot lines 2 formed of a metal thin film so as to fit together.

The operation of this embodiment is similar to that of the first embodiment.

Further, FIG. 5(a) is a plan view of the third embodiment of the present invention viewed from above, and FIG. 5(b) is a sectional view taken along the line c-c' of FIG. 5(a). . In the figure, dielectric waveguide/
The slot line converter 6 includes a tapered portion of the dielectric waveguide 1 having a tapered portion, a metal thin film 5 formed to surround the tapered portion of the dielectric waveguide 1,
The connecting portion of the slot line 2 is formed to be electrically connected to the metal thin film 5.

The operation of this embodiment is as described in 1. This is similar to the second embodiment.

In the above embodiments, the case where alumina ceramic is used as the blade has been described, but sintered glass or the like may also be used. Further, in the above embodiments, the case where the dielectric waveguide is rectangular has been described, but the same operation is performed when the dielectric waveguide is configured with a circular dielectric waveguide.

〔Effect of the invention〕

As described above, according to the ultra-high frequency probe needle of the present invention, the dielectric waveguide provided on the support member has extremely low loss in the millimeter wave band or above, and the dielectric waveguide provided on the support member and the tip each has a metal bump, and each rear end side is provided with a slot line consisting of a pair of lines connected to the dielectric waveguide, and the connecting portion between the dielectric waveguide and the slot line is connected to the signal propagation mode. Since it is a converter, it is possible to transmit signals with low loss in the millimeter wave band of 60 GHz or higher, and it is possible to measure the electrical characteristics of high-frequency semiconductor devices with high accuracy in the wafer state. be.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing an ultra-high frequency probe needle according to an embodiment of the present invention, and FIGS. 2(a) and 2(b) are perspective views from the bottom and top, respectively, of the first embodiment of the invention. Fig. 3, Fig. 3 1a) is a plan view of the first embodiment as seen from above, Fig. 3 (bl is a sectional view of the main part taken along the line A-A'),
FIG. 4(a) is a plan view showing a probe needle according to the second embodiment of the present invention, FIG. FIG. 5 is a plan view showing the probe needle according to the third embodiment (bl is a cross-sectional view of the main part along the line c-c', and FIG. 6 is a block diagram showing the ultra-high frequency probe needle according to the conventional example. ) and (b) are a perspective view and a bottom view showing essential parts of a conventional ultra-high frequency probe needle. In the figure, l is a dielectric waveguide, 2 is a metal thin film (slot line), and 3 is a metal bump. , 4 is a blade, 5 is a metal thin film, 6 is a dielectric waveguide/slot line converter, 11 is a coaxial receptacle, 12 is a metal thin film (coplanar line), 1
3 is a coaxial/coplanar conversion section, 14 is a core wire, 15 is a signal line, 16 is a ground line, and 17 is an external conductor. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (3)

[Claims] (1) A dielectric waveguide provided on a support member, and a pair of lines provided on the support member, each having a metal bump at its tip, and connected to the dielectric waveguide at its rear end, respectively. An ultra-high frequency probe needle comprising: a slot line consisting of a slot line; and a line converting section for converting a signal propagation mode, consisting of a connecting part between the dielectric waveguide and the slot line. (2) The ultra-high frequency probe needle according to claim 1, wherein the dielectric waveguide has a tapered portion on the tip side, and the slot line has a rear end portion or both sides of the tapered portion of the dielectric waveguide. An ultra-high frequency probe needle comprising a metal thin film provided so as to fit into the probe needle, wherein a connecting portion between the tapered portion and the slot line serves as the line conversion portion. (3) In the ultra-high frequency probe needle according to claim 1, a metal thin film is formed so as to surround the tip of the dielectric waveguide, and the slot line is electrically connected to the metal thin film to constitute the line conversion section. An ultra-high frequency probe needle characterized by: