JPH0420273B2 - - Google Patents
Info
- Publication number
- JPH0420273B2 JPH0420273B2 JP57103162A JP10316282A JPH0420273B2 JP H0420273 B2 JPH0420273 B2 JP H0420273B2 JP 57103162 A JP57103162 A JP 57103162A JP 10316282 A JP10316282 A JP 10316282A JP H0420273 B2 JPH0420273 B2 JP H0420273B2
- Authority
- JP
- Japan
- Prior art keywords
- photovoltaic
- elements
- supply device
- light
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は、電子機器への電力供給を光起電力に
より行わしめる太陽電池電源装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar battery power supply device that supplies power to electronic equipment using photovoltaic power.
近年、石油などのエネルギー資源の枯渇が問題
となる中で、非枯渇、クリーンエネルギー源であ
る太陽光から直接電気を得る光起電力装置、所謂
太陽電池の開発が盛んに行われており、従来、電
力用に限定されていた用途が電子式卓上計算機、
腕時計、ラジオ、充電器等の民生機器の電源にま
で用いられるに至つてきた。 In recent years, as the depletion of energy resources such as oil has become a problem, there has been active development of photovoltaic devices, so-called solar cells, that generate electricity directly from sunlight, which is a non-depletable, clean energy source. , the use of electronic desktop calculators was limited to electric power,
It has even come to be used as a power source for consumer devices such as watches, radios, and chargers.
特に、アモルフアスシリコンに代表されるアモ
ルフアス半導体を利用した太陽電池は、従来の単
結晶半導体から構成されるものに比べ光電変換効
率の点では劣るものの、単位発電量に対するコス
トの面で勝ると共に、室内光下に於いては些程遜
色のない光電変換効率を得ることができる。その
結果、室内で殆ど使用される電子式卓上計算機に
は、上記アモルフアス半導体を主体とする太陽電
池の利用が専用のLSIの開発と相俟つて急速に進
んでいる。 In particular, solar cells that utilize amorphous semiconductors, such as amorphous silicon, are inferior to those constructed from conventional single-crystalline semiconductors in terms of photoelectric conversion efficiency, but are superior in terms of cost per unit power generation. Under indoor light, comparable photoelectric conversion efficiency can be obtained. As a result, the use of solar cells based on amorphous semiconductors is rapidly progressing in electronic desktop calculators, which are mostly used indoors, in conjunction with the development of dedicated LSIs.
然し乍ら、上記アモルフアス半導体のみならず
如何なる太陽電池であつても、光照射量が減少す
ると発電電力は低下し、電子式卓上計算機等の民
生機器が正常に機能を果すに足りる十分な電力を
得るに至らず、誤動作を招く危惧を有していた。 However, not only the above-mentioned amorphous semiconductor but also any solar cell, when the amount of light irradiation decreases, the generated power decreases, and it is difficult to obtain enough power for consumer devices such as electronic desktop calculators to function properly. However, there was a risk of malfunction.
本発明は斯る危惧に鑑みて為されたものであつ
て、以下に図面を参照して本発明の一実施例につ
き詳述する。 The present invention has been made in view of such concerns, and one embodiment of the present invention will be described in detail below with reference to the drawings.
第１図Ａ及びＢは本発明の正面図並びに断面図
を示し、１は絶縁性且つ透光性を有するガラス、
耐熱プラスチツク等からなる基板２ａ，２ｂ…２
ｎは該基板１の一主面に並置され、光照射により
光起電力を発生するＮ個の光起電力素子で、各光
起電力素子２ａ，２ｂ…２ｎは基板１側から透明
電極層３ａ，３ｂ…３ｎ、半導体層４及び金属電
極層５ａ，５ｂ…５ｎを順次積層せしめた積層構
造を持つている。そして、光起電力素子２ａ，２
ｂ…２ｎは、透明電極層３ａ，３ｂ…３ｎ及び金
属電極層５ａ，５ｂ…５ｎが半導体層４から延在
した延長部６ａ，６ｂ…６ｎ、７ａ，７ｂ…７ｎ
の互いに隣接したもの同士を結合せしめることに
よつて、電気的に直列関係になるべく接続されて
いる。８，９は上記透明電極層３ａ及び金属電極
層５ｎの両端延長部６ａ，７ｎに結線された出力
リード線で、例えば超音波半田により取着されて
いる。 FIGS. 1A and 1B show a front view and a cross-sectional view of the present invention, in which 1 is a glass having insulating and translucent properties;
Substrates 2a, 2b...2 made of heat-resistant plastic, etc.
n are N photovoltaic elements that are arranged in parallel on one main surface of the substrate 1 and generate photovoltaic force by light irradiation, and each photovoltaic element 2a, 2b...2n is connected to the transparent electrode layer 3a from the substrate 1 side. , 3b...3n, a semiconductor layer 4, and metal electrode layers 5a, 5b...5n are sequentially stacked. And photovoltaic elements 2a, 2
b...2n is an extension part 6a, 6b...6n, 7a, 7b...7n in which the transparent electrode layers 3a, 3b...3n and the metal electrode layers 5a, 5b...5n extend from the semiconductor layer 4.
are electrically connected in a series relationship by coupling adjacent ones of the two to each other. Reference numerals 8 and 9 denote output lead wires connected to both end extensions 6a and 7n of the transparent electrode layer 3a and metal electrode layer 5n, and are attached by, for example, ultrasonic soldering.
上記半導体層４は、膜厚サブミクロンから数10
ミクロン程度の薄膜状で光起電力効果を生じるア
モルフアス半導体、該アモルフアス半導体を微結
晶化したもの、或いは多結晶半導体等の製造が比
較的容易な非単結晶半導体からなり、本発明の具
体的実施例に於いては、PIN接合型アモルフアス
シリコンが適用されている。このアモルフアスシ
リコンは、周知の如くシラン（SiH4）ガス等の
シリコン化合物ガス雰囲気中でのプラズマ反応に
より薄膜状に形成することができ、その雰囲気中
にジボラン（B2H6）を添加することによりＰ型
アモルフアスシリコンが得られ、一方、ホスフイ
ン（PH3）を添加することによりＮ型アモルフア
スシリコンを得ることができる。またその形状も
マスタパターンにより任意に形成し得る。そし
て、透明電極層３ａ，３ｂ…３ｎとしては酸化ス
ズ、酸化インジウム、若しくは酸化インジウム・
スズが、また金属電極層５ａ，５ｂ…５ｎとして
はオーミツク性のあるアルミニウム、金等が夫々
適宜選択使用される。 The semiconductor layer 4 has a film thickness ranging from submicron to several tens of microns.
Amorphous semiconductors that are relatively easy to manufacture, such as amorphous semiconductors in the form of a micron-sized thin film that produce a photovoltaic effect, microcrystallized amorphous semiconductors, or polycrystalline semiconductors, are used to implement the present invention. In this example, PIN junction type amorphous silicon is used. As is well known, this amorphous silicon can be formed into a thin film by a plasma reaction in an atmosphere of silicon compound gas such as silane (SiH 4 ) gas, and diborane (B 2 H 6 ) is added to the atmosphere. By this, P-type amorphous silicon can be obtained, while by adding phosphine (PH 3 ), N-type amorphous silicon can be obtained. Further, its shape can also be arbitrarily formed using a master pattern. The transparent electrode layers 3a, 3b...3n are made of tin oxide, indium oxide, or indium oxide.
Tin is used, and aluminum, gold, and the like having ohmic properties are appropriately selected and used for the metal electrode layers 5a, 5b, . . . , 5n.
以上述べた限りでは、斯るＮ個の光起電力素子
２ａ，２ｂ…２ｎを直列関係に接続せしめた光起
電力装置は、電子式卓上計算機等の民生機器の電
源装置として既に実用に供せられているものと同
等である。 As stated above, a photovoltaic device in which N photovoltaic elements 2a, 2b...2n are connected in series has already been put to practical use as a power supply device for consumer devices such as electronic desktop calculators. It is equivalent to what is shown.
ところで、本発明では、上記直列関係に接続さ
れた同一構造を持つＮ個の光起電力素子２ａ，２
ｂ…２ｎの内の１つを光照射量を検出する光検出
素子として兼用すると共に、この光検出素子と兼
用する光起電力素子２ａの受光面積を他の素子に
比べ大となし、上記光検出素子の光検出量に応じ
て上記光起電力素子２ａ，２ｂ…２ｎの出力状態
を制御するようにしている。そして、光検出素子
と兼用せる左端部に位置する第１の光起電力素子
２ａには、光照射量に応じた光検出量を得るべく
検出抵抗１０が接続されている。 By the way, in the present invention, N photovoltaic elements 2a, 2 having the same structure connected in series are used.
One of b...2n is used as a photodetection element for detecting the amount of light irradiation, and the light-receiving area of the photovoltaic element 2a, which also serves as this photodetection element, is made larger than the other elements, so that the above-mentioned light The output states of the photovoltaic elements 2a, 2b, . . . 2n are controlled in accordance with the amount of light detected by the detection elements. A detection resistor 10 is connected to the first photovoltaic element 2a located at the left end, which also serves as a photodetection element, in order to obtain a detected amount of light corresponding to the amount of light irradiation.
次に、この検出抵抗１０の影響について、第２
図及び第３図に基づいて説明する。 Next, regarding the influence of this detection resistor 10, the second
This will be explained based on the diagram and FIG.
第２図は検出抵抗１０の抵抗値を種々変化せし
めた場合の光照射量（照度）に対する出力特性図
である。この特性図から明らかな如く、対数目盛
りに於いて照度に対して直線的な出力特性が得ら
れることがわかる。 FIG. 2 is an output characteristic diagram with respect to the amount of light irradiation (illuminance) when the resistance value of the detection resistor 10 is varied. As is clear from this characteristic diagram, it can be seen that a linear output characteristic with respect to illuminance can be obtained on a logarithmic scale.
一方、検出抵抗１０を第１の光起電力素子２ａ
に接続すると第３図の如く、第１の光起電力素子
２ａの受光面積を他の光起電力素子２ｂ…２ｎと
同一とした場合、動作点がX1からX2に変動する。
即ち、検出抵抗１０を第１の光起電力素子２ａに
接続することにより、本来負荷回路に流れるべき
出力電流が一部バイパスされるために動作点が移
動するのである。 On the other hand, the detection resistor 10 is connected to the first photovoltaic element 2a.
As shown in FIG. 3, when the light-receiving area of the first photovoltaic element 2a is the same as that of the other photovoltaic elements 2b...2n, the operating point changes from X1 to X2 .
That is, by connecting the detection resistor 10 to the first photovoltaic element 2a, a portion of the output current that should normally flow to the load circuit is bypassed, so that the operating point is moved.
そこで、本発明では、検出抵抗１０にバイパス
される出力電流を補償すべく、第１の光起電力素
子２ａの面積を他の直列関係にある光起電力素子
２ｂ…２ｎに比べ大になし、第３図の破線の如く
出力電流の増加を図つている。即ち、本発明の特
徴は、複数個の光起電力素子２ａ，２ｂ…２ｎを
電気的に直列関係になるべく接続した太陽電池電
源装置に於いて、複数個の内第１の光起電力素子
２ａを光照射量を検出する光検出素子としても兼
用すると共に、この光起電力素子２ａの受光面積
の他の素子２ｂ…２ｎに比べ大とすることによ
り、第１の光起電力素子２ａと他の素子２ｂ…２
ｎの出力電圧が同等となるように構成し、光起電
力素子として兼用せしめた第１の光起電力素子２
ａの光検出量に応じて光起電力素子２ａ，２ｂ…
２ｎの出力状態を制御したことにある。斯る第１
の光起電力素子２ａの大面積化は、周知の如く出
力電流量が受光面積に比例する点を考慮して、出
力リード線８，９に接続される負荷回路のインピ
ーダンス及び検出抵抗１０の抵抗値より容易に設
計することができる。その結果、第１の光起電力
素子２ａは受光面積の増大に伴い出力電流が増加
して動作点がX2からX3に移動する。この動作点
X3は、出力電圧に関して、検出抵抗１０を持た
ない他の光起電力素子２ｂ…２ｎの動作点X1と
実質的に等しく、出力リード線８，９間に各素子
２ａ，２ｂ…２ｎからバラツキのない所望の光起
電力を得ることができると共に、検出抵抗１０間
に光照射量に応じた出力電圧が得られる。 Therefore, in the present invention, in order to compensate for the output current bypassed by the detection resistor 10, the area of the first photovoltaic element 2a is made larger than that of the other photovoltaic elements 2b...2n in series relationship, As shown by the broken line in FIG. 3, the output current is increased. That is, the feature of the present invention is that in a solar cell power supply device in which a plurality of photovoltaic elements 2a, 2b...2n are electrically connected in series, the first photovoltaic element 2a among the plurality This photovoltaic element 2a also serves as a photodetection element for detecting the amount of light irradiation, and by making the light receiving area of this photovoltaic element 2a larger than that of the other elements 2b...2n, the first photovoltaic element 2a and the other elements are element 2b...2
a first photovoltaic element 2 configured so that the output voltages of n are equal and used also as a photovoltaic element;
Photovoltaic elements 2a, 2b... according to the detected amount of light a.
The reason lies in controlling the output state of 2n. The first
In order to increase the area of the photovoltaic element 2a, the impedance of the load circuit connected to the output lead wires 8 and 9 and the resistance of the detection resistor 10 are increased in consideration of the fact that the amount of output current is proportional to the light receiving area as is well known. Values can be more easily designed. As a result, the output current of the first photovoltaic element 2a increases as the light-receiving area increases, and the operating point moves from X2 to X3 . This operating point
Regarding the output voltage, X 3 is substantially equal to the operating point X 1 of the other photovoltaic elements 2b...2n without the detection resistor 10, and between the output leads 8, 9 from each element 2a, 2b...2n. A desired photovoltaic force without variation can be obtained, and an output voltage corresponding to the amount of light irradiation can be obtained across the detection resistor 10.
一方、第１の光起電力素子２ａの大面積化に伴
つて動作点がX2からX3に移動することにより、
第１の光起電力素子２ａの出力電流は、他の光起
電力素子２ｂ…２ｎより増大する。然し乍ら、こ
れら光起電力素子２ａ，２ｂ…２ｎは電気的に直
列関係にあるため、出力リード線８，９間から得
られる出力電流は、各光起電力素子２ａ，２ｂ…
２ｎの出力電流の最も小さい値に制限され、光起
電力素子２ｂ…２ｎの動作点X1における出力電
流が出力リード線８，９間から取り出されること
となる。 On the other hand, as the operating point moves from X 2 to X 3 as the area of the first photovoltaic element 2a increases,
The output current of the first photovoltaic element 2a is greater than that of the other photovoltaic elements 2b...2n. However, since these photovoltaic elements 2a, 2b, .
2n, and the output current at the operating point X1 of the photovoltaic elements 2b...2n is taken out from between the output leads 8 and 9.
従つて、第１の光起電力素子２ａの受光面積を
大とすることにより、各素子２ａ，２ｂ…２ｎの
出力電圧は整合すると共に、出力電流の面におい
ては、何ら悪影響は生じない。 Therefore, by increasing the light-receiving area of the first photovoltaic element 2a, the output voltages of each element 2a, 2b, .
そして、斯る検出抵抗１０間の出力電圧により
光起電力素子２ａ，２ｂ…２ｎに照射されている
光照射量を検出し、その光照射量が負荷回路が正
常に動作するに足りる電力を発電することができ
ない量であれば、上記負荷回路への光起電力の出
力を遮断すべく制御することができる。 Then, the amount of light irradiated to the photovoltaic elements 2a, 2b, . If the amount of photovoltaic power cannot be controlled, the output of the photovoltaic force to the load circuit can be controlled to be cut off.
本発明は、以上の説明から明らかな如く、電気
的に直列関係に接続した複数個の光起電力素子の
内１つを光照射量を検出する光検出素子として兼
用すると共に、該兼用せる光起電力素子の受光面
積を他の素子に比べ大とすることにより、光起電
力素子の１つを光検出素子として兼用せしめたに
も拘らず、他の光起電力素子との出力特性のバラ
ツキを招くことなく、斯る光検出素子の光検出力
に応じて複数個の出力状態を制御せしめることが
でき、該光起電力素子の発電電力の供給を遮断す
ることができる。更に、上記光起電力素子並びに
光検出素子を非単結晶半導体、就中アモルフアス
半導体を主体として構成すれば、１つの兼用せる
光起電力素子の受光面積を大になすのも、製造プ
ロセス中のマスクパターン形状を変更するだけで
通常のプロセスを使用することができるばかり
か、その使用が殆ど室内に限定される電子式卓上
計算機等に適用することにより、単結晶半導体と
些程遜色のない光電変換効率を得ることができ
る。 As is clear from the above description, the present invention uses one of a plurality of photovoltaic elements electrically connected in series as a photodetecting element for detecting the amount of light irradiation, and By making the light-receiving area of the electromotive force element larger than that of other elements, one of the photovoltaic elements can also be used as a photodetection element, but variations in output characteristics with other photovoltaic elements can be avoided. It is possible to control a plurality of output states according to the photodetecting power of the photodetecting element, and to cut off the supply of power generated by the photovoltaic element, without causing any problems. Furthermore, if the above-mentioned photovoltaic elements and photodetecting elements are mainly composed of non-single-crystal semiconductors, especially amorphous semiconductors, it is possible to increase the light-receiving area of a single photovoltaic element that can be used for multiple purposes during the manufacturing process. Not only can normal processes be used by simply changing the shape of the mask pattern, but by applying it to electronic desktop calculators, etc. whose use is mostly limited to indoors, it is possible to develop photovoltaic devices that are comparable to single-crystal semiconductors. Conversion efficiency can be obtained.
第１図は本発明の一実施例を示し、同図Ａは正
面図、同図ＢはＡに於けるＢ−B′線断面図、第
２図は光検出素子の出力特性図、第３図は光起電
力素子の電圧−電流特性図であり、１は基板、２
ａ，２ｂ…２ｎは光起電力素子、１０は検出抵
抗、を夫々示している。
Fig. 1 shows an embodiment of the present invention, in which Fig. A is a front view, Fig. B is a sectional view taken along line B-B' in A, Fig. 2 is an output characteristic diagram of the photodetecting element, and Fig. 3 is a diagram of the output characteristics of the photodetecting element. The figure is a voltage-current characteristic diagram of a photovoltaic element, where 1 is the substrate, 2
a, 2b...2n indicate photovoltaic elements, and 10 indicates a detection resistor, respectively.
Claims (1)
なるべく接続した太陽電池電源装置に於いて、上
記複数個の内１つを光照射量を検出する光検出素
子としても兼用すると共に、該光検出素子と兼用
する光起電力素子の受光面積を他の素子に比べ大
とすることにより、該光検出素子と他の素子の出
力電圧が同等となるように構成し、上記光検出素
子の光検出量に応じて上記光起電力素子の出力状
態を制御したことを特徴とする太陽電池電源装
置。 ２ 上記光起電力素子並びに光検出素子が、非単
結晶半導体から成ることを特徴とした特許請求の
範囲第１項記載の太陽電池電源装置。 ３ 上記非単結晶半導体から成る光起電力素子並
びに光検出素子が、同一基板に形成されたアモル
フアス半導体を主体とすることを特徴とした特許
請求の範囲第２項記載の太陽電池電源装置。[Scope of Claims] 1. In a solar cell power supply device in which a plurality of photovoltaic elements are electrically connected in series, one of the plurality of photovoltaic elements is used as a photodetection element for detecting the amount of light irradiation. In addition, by making the light receiving area of the photovoltaic element that also serves as the photodetector element larger than that of other elements, the output voltage of the photodetector element and the other elements are made to be equivalent. . A solar battery power supply device, characterized in that the output state of the photovoltaic element is controlled according to the amount of light detected by the photodetector. 2. The solar cell power supply device according to claim 1, wherein the photovoltaic element and the photodetecting element are made of a non-single crystal semiconductor. 3. The solar cell power supply device according to claim 2, wherein the photovoltaic element and the photodetecting element made of the non-single crystal semiconductor are mainly made of an amorphous semiconductor formed on the same substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57103162A JPS58219777A (en) | 1982-06-15 | 1982-06-15 | solar power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57103162A JPS58219777A (en) | 1982-06-15 | 1982-06-15 | solar power supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58219777A JPS58219777A (en) | 1983-12-21 |
| JPH0420273B2 true JPH0420273B2 (en) | 1992-04-02 |
Family
ID=14346805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57103162A Granted JPS58219777A (en) | 1982-06-15 | 1982-06-15 | solar power supply |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58219777A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10107600C1 (en) * | 2001-02-17 | 2002-08-22 | Saint Gobain | Method for operating a photovoltaic solar module and photovoltaic solar module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56124062A (en) * | 1980-03-05 | 1981-09-29 | Hitachi Ltd | Voltage detection method for solar battery |
-
1982
- 1982-06-15 JP JP57103162A patent/JPS58219777A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58219777A (en) | 1983-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6703555B2 (en) | Solar cell string, solar cell array and solar photovoltaic power system | |
| US9882076B2 (en) | Optical tandem photovoltaic cell panels | |
| US5580395A (en) | Solar cell with integrated bypass function | |
| JP2017510083A (en) | Photovoltaic module with bypass diode | |
| US20120292675A1 (en) | Photovoltaic device with lateral p-i-n light-sensitive diodes | |
| CN101593781A (en) | Non-linear solar cell module | |
| WO2008141863A2 (en) | Backside contacting on thin layer photovoltaic cells | |
| KR20180076433A (en) | Bifacial tandem solar cell and method of manufacturing the same | |
| JPH0528513B2 (en) | ||
| JPS6161551B2 (en) | ||
| JPS58219777A (en) | solar power supply | |
| JP2010182851A (en) | Solar-battery module | |
| JPH0470789B2 (en) | ||
| JP2673021B2 (en) | Solar cell | |
| JPS58219778A (en) | power supply | |
| JP2013030627A (en) | Photoelectric conversion device | |
| JP2884171B2 (en) | Amorphous solar cell | |
| JPH03132080A (en) | Photovoltaic device | |
| CN108336165A (en) | Separated type solar battery and solar array battery | |
| JP2869178B2 (en) | Photovoltaic device | |
| JPH0444433B2 (en) | ||
| JPS6326555B2 (en) | ||
| JPS6148797B2 (en) | ||
| JPS59213175A (en) | Semiconductor photovoltaic device | |
| JPH03126267A (en) | Photoelectric converter |