JPH0421586A - Glass crucible for pulling up single crystal and production thereof - Google Patents
Glass crucible for pulling up single crystal and production thereofInfo
- Publication number
- JPH0421586A JPH0421586A JP12314190A JP12314190A JPH0421586A JP H0421586 A JPH0421586 A JP H0421586A JP 12314190 A JP12314190 A JP 12314190A JP 12314190 A JP12314190 A JP 12314190A JP H0421586 A JPH0421586 A JP H0421586A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz glass
- glass crucible
- carbon
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000011521 glass Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052799 carbon Inorganic materials 0.000 abstract description 20
- 239000002184 metal Substances 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 6
- 238000010891 electric arc Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 229910052909 inorganic silicate Inorganic materials 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、シリコン単結晶引上げに使用される石英ガ
ラスルツボ及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a quartz glass crucible used for pulling silicon single crystals and a method for manufacturing the same.
従来の技術 従来は第４図に示す方法のものか一般的であった。Conventional technology Conventionally, the method shown in FIG. 4 has been common.
すなわち、石英がラスルツホ６は、中空の円筒体６ａに
わん曲した底部材６ｂを溶接したものである。この形状
はカーボンルツボ５の形状と対応している。That is, the quartz base member 6 is made by welding a curved bottom member 6b to a hollow cylindrical body 6a. This shape corresponds to the shape of the carbon crucible 5.
発明が解決しようとする問題点
そのために、実際の８１単結晶引上げ時に、わん曲した
底部材６ｂにおける石英ルツボとカーボンルツボのフィ
ツト性（寸法公差等）か石英ルツボとカーホンルツボの
反応によるカーボンルツボの侵食（溶損）のため悪く、
熱変形があった。さらに、１４インチや１６インチの石
英ルツボて所定のＰｏ１７−５ｉを注入して引上げた場
合、ルツボの内径が縮小するのに伴ない、引上げ条件の
設定が難しく必ず１５〜２０％の残留メタルが発生し、
弓上げ効率が良くない。Problems to be Solved by the Invention For this reason, during the actual pulling of the 81 single crystal, it is necessary to check the fit (dimensional tolerance, etc.) between the quartz crucible and the carbon crucible in the curved bottom member 6b or the carbon crucible due to the reaction between the quartz crucible and the carbon crucible. Bad due to erosion (erosion);
There was heat deformation. Furthermore, when a 14-inch or 16-inch quartz crucible is injected with Po17-5i and pulled, it is difficult to set the pulling conditions as the inner diameter of the crucible decreases, and 15 to 20% of residual metal always remains. occurs,
Bow raising efficiency is not good.
発明の目的
この発明は、石英ルツボとカーボンルツボのフィツト性
を向上させ、引上げ後の残留メタルを削減し、引上げ条
件の安定化が図れる単結晶引上げ用石英ガラスルツボ及
びその製造方法を提供することを目的とする。Purpose of the Invention The present invention provides a quartz glass crucible for pulling a single crystal, which improves the fit between a quartz crucible and a carbon crucible, reduces residual metal after pulling, and stabilizes pulling conditions, and a method for manufacturing the same. With the goal.
発明の要旨
この発明は、特許請求の範囲の請求項１に記載の単結晶
引上げ用石英ガラスルツボ及び、請求項２に記載の単結
晶引上げ用石英ガラスルツボの製造方法を要旨としてい
る
問題点を解決する手段
第１図に示すように、二酸化珪素を含有する側体として
の円筒状の側体１６と、二酸化珪素を含有する平板状の
底体７とにより石英ガラスルツホ１０を構成している。SUMMARY OF THE INVENTION This invention solves the problems that are the gist of the quartz glass crucible for pulling single crystals according to claim 1 and the method for manufacturing the quartz glass crucible for pulling single crystals according to claim 2. Means for Solving the Problem As shown in FIG. 1, a silica glass rutsho 10 is constituted by a cylindrical side body 16 containing silicon dioxide and a flat bottom body 7 containing silicon dioxide.
この側体１６は軸方向に沿って直径が一定になっている
。This side body 16 has a constant diameter along the axial direction.
まず円筒状の側体１６を形成し、このあと底体７を形成
する。この両者を熱で溶融して一体化して石英ガラスル
ツボ１０を作る。First, the cylindrical side body 16 is formed, and then the bottom body 7 is formed. The quartz glass crucible 10 is made by melting these two parts with heat and integrating them.
逆に、底体７を形成し、このあと円筒状の側体１６を形
成してこの両者を熱で溶融し一体化して石英ガラスルツ
ボ１０を作ってもよい。Conversely, the silica glass crucible 10 may be made by forming the bottom body 7, then forming the cylindrical side body 16, and melting and integrating the two with heat.
実 施 例
第１図を参照する。第１図はカーボンルツボ内で単結晶
引上げ用の石英ガラスルツボを、アーク溶融法で形成す
る場合を示している。EXAMPLE Refer to FIG. 1. FIG. 1 shows a case in which a quartz glass crucible for pulling a single crystal is formed in a carbon crucible by an arc melting method.
まず石英ガラスルツボ１０を形成する装置を説明する。First, an apparatus for forming the silica glass crucible 10 will be explained.
支持台１１の軸２は回転機構１により矢印方向３に回転
可能になっている。The shaft 2 of the support base 11 is rotatable in the direction of the arrow 3 by the rotation mechanism 1.
支持台１１の上にある容器４の内部にはカーボンルツボ
１５か収容されている。カーボンルツボ１５は平板状の
底部１７と円筒状の側壁部１８から成る。この側壁部１
８は軸方向に沿って一定の直径を有している。A carbon crucible 15 is housed inside the container 4 on the support stand 11. The carbon crucible 15 consists of a flat bottom portion 17 and a cylindrical side wall portion 18. This side wall part 1
8 has a constant diameter along the axial direction.
容器４とカーボンルツボ１５の空間１９はポンプ９につ
ながれている。符号８はバルブである。A space 19 between the container 4 and the carbon crucible 15 is connected to a pump 9. Reference numeral 8 is a valve.
第１図と第２図に示すように、カーホンルツボ１５の内
部には石英ガラスルツボ１０が形成される。上方にある
のはアーク放電素子２２である。形成された石英ガラス
ルツボ１０は、二酸化珪素含有の円筒状の側体１６と、
二酸化珪素含有の円形平板状の底体７から成る。円筒状
の側体１６はカーボンルツボの側壁部１８に対応し、底
体７はカーボンルツボ１５の底部１７に対応した形成で
ある。側体１６は軸方向に沿って直径か一定である。As shown in FIGS. 1 and 2, a quartz glass crucible 10 is formed inside the Carhon crucible 15. As shown in FIGS. At the top is an arc discharge element 22. The formed silica glass crucible 10 includes a cylindrical side body 16 containing silicon dioxide,
It consists of a circular flat bottom body 7 containing silicon dioxide. The cylindrical side body 16 is formed to correspond to the side wall portion 18 of the carbon crucible, and the bottom body 7 is formed to correspond to the bottom portion 17 of the carbon crucible 15. The side body 16 has a constant diameter along the axial direction.
第３図に示すように、石英ガラスルツボ１０の底体７と
円筒状の側体１６の間の部分には、好ましくは底体７に
対して４５°の角度となった小さなコーナ部２０を有し
ている。As shown in FIG. 3, a small corner portion 20, preferably at an angle of 45° with respect to the bottom body 7, is formed between the bottom body 7 and the cylindrical side body 16 of the quartz glass crucible 10. have.
このコーナ部２０を設けることにより、石英ガラスルツ
ボ１０の強度を大きくてき、ハンドリング時の亀裂発生
の危険性を小さくてきる。もしコーナ一部が角ぼってい
ると強度的に弱く、ハンドリング時の亀裂の発生の危険
性か高くなる。By providing this corner portion 20, the strength of the quartz glass crucible 10 is increased and the risk of cracking during handling is reduced. If some of the corners are rounded, the strength will be weak and there will be a high risk of cracking during handling.
第２図に示すように円筒状の側体１６と底体７は直角で
あることか必要である。これは石英ガラスルツホの変形
の原因となる熱応力を発生させないためである。また底
体７の外径りと円筒状の側体１６の高さＨとの比Ｄ／Ｈ
か１．６以上であるような石英ガラスルツボに本発明を
実施すれば、連続チャージ用の石英ガラスルツホとして
好適であり、液融Ｓｉの液面高さが常にＳｉ単結晶とし
て引き上げられた量に比例するのて、Ｐｏ１ｙ−３ｉの
チャージ量、Ｓｉ単結晶の引上げ速度、液融Ｓｉの温度
制御等が非常に容易になる。As shown in FIG. 2, the cylindrical side body 16 and the bottom body 7 must be at right angles. This is to prevent generation of thermal stress that would cause deformation of the silica glass rutsho. Also, the ratio D/H of the outer diameter of the bottom body 7 and the height H of the cylindrical side body 16
If the present invention is applied to a quartz glass crucible with a temperature of 1.6 or more, it will be suitable as a quartz glass crucible for continuous charging, and the liquid level of molten Si will always be the same as the amount pulled as a Si single crystal. Being proportional, it becomes very easy to control the charge amount of Po1y-3i, the pulling rate of Si single crystal, the temperature of molten Si, etc.
石英ガラスルツボ１０の製造方法をのべる。A method for manufacturing the silica glass crucible 10 will be described.
まず、円筒状の側体１６を形成する。First, the cylindrical side body 16 is formed.
カーボンルツボ１５の中に石英ガラス２１を入れアーク
放電素子２２により石英ガラス２１を溶融するとともに
支持台１１を回転する。これにより溶融石英ガラス２１
はカーボンルツボ１５の側壁部１８に沿って上方へ移動
して円筒状の側体１６を形成する。A quartz glass 21 is placed in a carbon crucible 15, and the quartz glass 21 is melted by an arc discharge element 22 while the support base 11 is rotated. As a result, the fused silica glass 21
moves upward along the side wall portion 18 of the carbon crucible 15 to form a cylindrical side body 16.
次に、ポンプ９を作動して減圧し、底体７を形成する。Next, the pump 9 is operated to reduce the pressure, and the bottom body 7 is formed.
つまり溶融石英ガラス２１が側壁部１８に沿って上方へ
移動するのを防ぐのである。In other words, the fused silica glass 21 is prevented from moving upward along the side wall portion 18.
次に後掲の表−１を説明する。Next, Table 1 below will be explained.
表−１では、１４インチＸ１０インチの石英ガラスルツ
ボの実施例と比較例、および１６インチＸ１２インチの
石英ガラスルツボの実施例と比較例を示している。Table 1 shows examples and comparative examples of 14 inch x 10 inch quartz glass crucibles, and examples and comparative examples of 16 inch x 12 inch quartz glass crucibles.
比較例の８１のチャージ量が３０ ｋｇと４０ｋｇであ
るのに対し、この発明の実施例のＳのチャージ量は３５
ｋｇと４７ｋｇといずれも多くしている。にもかかわら
ず、実施例は比較例に比べてたとえは残留メタル量が４
ｋｇから０．５ｋｇに、６ｋｇから１．０ｋｇにそれぞ
れ大幅に減少している。多くの実験の結果、残留メタル
量を１１５〜１／１０に減少することが判明した。The charge amount of 81 in the comparative example is 30 kg and 40 kg, while the charge amount of S in the example of this invention is 35 kg.
kg and 47 kg, both of which are large. Nevertheless, compared to the comparative example, the amount of residual metal in the example was 4.
The weight has decreased significantly from 0.5 kg to 0.5 kg, and from 6 kg to 1.0 kg. As a result of many experiments, it was found that the amount of residual metal can be reduced by 115 to 1/10.
この発明の石英ガラスルツボの形状にすることより、残
留メタルが少くなっても常にＳ融液が外向き（水平方向
）に力を加えるので、石英ガラスルツボが内側へへたる
ことがない。つまり底体７は平板状であり、この底部７
か側体１６と接続されていることからＳｌ融液か外向き
に力を加えることになる。Due to the shape of the vitreous silica crucible of the present invention, the S melt always applies force outward (horizontally) even when the amount of residual metal is small, so the vitreous silica crucible does not sag inward. In other words, the bottom body 7 has a flat plate shape, and this bottom part 7
Since it is connected to the side body 16, an outward force is applied to the Sl melt.
またこの発明では残留メタル量を減らせるので、１０％
以上の８１チヤージ量を増加させて石英ガラスルツボを
作ることができる。In addition, this invention can reduce the amount of residual metal by 10%.
A quartz glass crucible can be made by increasing the above 81 charge amount.
つまり丈夫な石英ガラスルツボを作ることができる。In other words, a durable silica glass crucible can be made.
ところで、減圧下で底体７を先に形成したあと圧力を上
げてそのあと円筒体状の側体１６を形成してもよい。Incidentally, the bottom body 7 may be first formed under reduced pressure, and then the pressure may be increased to form the cylindrical side body 16.
またＴＰＬにより円筒体１６を形成し、これに平たい円
板状の底体７をアークまたはレーザ等で溶接してもよい
。このＴＰＬとは長尺の円筒状型に回転を利用して二酸
化珪素を張りつかせ、中心部にカーボン等の熱源を配し
、抵抗加熱により溶融する方法のことである。Alternatively, the cylindrical body 16 may be formed by TPL, and the flat disc-shaped bottom body 7 may be welded to this by arc, laser, or the like. TPL is a method in which silicon dioxide is attached to a long cylindrical mold using rotation, a heat source such as carbon is placed in the center, and the mold is melted by resistance heating.
底体７は透明の平板にし、ＴＰＬにより形成した円筒状
の側体１６を不透明にすることもてきる。つまり底部が
透明で側部が不透明の石英ガラスルツボか作れるのであ
る。The bottom body 7 may be a transparent flat plate, and the cylindrical side body 16 formed of TPL may be made opaque. In other words, it is possible to create a quartz glass crucible with a transparent bottom and opaque sides.
また、石英ガラスルツボの内部を無泡の透明層にし外部
を不透明層にしてもよい。Alternatively, the inside of the quartz glass crucible may be made into a bubble-free transparent layer, and the outside may be made into an opaque layer.
発明の効果
この発明によれば、側体を軸方向に沿って一定の直径を
有する円筒状にし、底体を平板状にしているので、底体
と側体の接続部分における石英ガラスルツボとカーボン
ルツボのフィツト性が大幅に向上する。そして引上げ時
の石英ガラスルツボの変形に伴なうＳｉ溶融液面変動が
なく安定して引上げかできるとともに、残留メタル（Ｐ
ｏｌｙ −３ｉ）を極力少なくすることができ、石英ガ
ラスルツボを冷却しても割れずコスト低減につながるも
のである。Effects of the Invention According to this invention, since the side body is made into a cylindrical shape having a constant diameter along the axial direction and the bottom body is made into a flat plate shape, the quartz glass crucible and carbon at the connection part between the bottom body and the side body are Crucible fit is greatly improved. Furthermore, there is no fluctuation in the Si molten liquid level due to deformation of the silica glass crucible during pulling, and the pulling can be performed stably.
oly-3i) can be reduced as much as possible, and the quartz glass crucible does not break even when cooled, leading to cost reduction.
【図面の簡単な説明】
第１図はこの発明の石英ガラスルツボとその製造装置を
示す図、第２図は石英ガラスルツボの断面図、第３図は
底体と側体の接続されたコーナ部分を拡大して示す図、
第４図は従来の石英ガラスルツボを示す図である。
１・・・・・・回転機構
２・・・・・・軸
４・・・・・・容 器
５・・・・・・カーボンルツボ
６・・・・・・石英ガラスルツボ
７・・・・・・底 体
９・・・・・・ポンプ
１１・・・支持台
１５・・・カーボンルツボ
１６・・・円筒状の側体
９・・・空
間
０・・・コーナ部
Ｇ。
曹
Ｇ。
Ｇ。[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a diagram showing a vitreous silica crucible and its manufacturing apparatus according to the present invention, Fig. 2 is a cross-sectional view of the vitreous silica crucible, and Fig. 3 is a corner where the bottom body and side body are connected. A diagram showing a portion enlarged,
FIG. 4 is a diagram showing a conventional quartz glass crucible. 1... Rotating mechanism 2... Axis 4... Container 5... Carbon crucible 6... Quartz glass crucible 7... ...Bottom body 9...Pump 11...Support stand 15...Carbon crucible 16...Cylindrical side body 9...Space 0...Corner part G. Cao G. G.
Claims (1)
る平板状の底体から成ることを特徴とする単結晶引上げ
用石英ガラスルツボ。 ２、二酸化珪素を含有する軸方向に沿って 直径が一定となった円筒の側体または二酸化珪素含有の
平板状の底体のいずれか一方を形成する工程と、 二酸化珪素含有の円筒状の上記側体または 二酸化珪素含有の平板状の上記底体のうちの残りの他方
を形成する工程と、 この一方と他方を熱で溶融して一体化する 工程と、を具備することを特徴とする単結晶引上げ用石
英ガラスルツボの製造方法。[Claims] 1. Single crystal pulling characterized by comprising a cylindrical side body containing silicon dioxide and having a constant diameter along the axial direction, and a flat bottom body containing silicon dioxide. quartz glass crucible. 2. Forming either a cylindrical side body containing silicon dioxide and having a constant diameter along the axial direction or a flat bottom body containing silicon dioxide; A unit characterized by comprising the steps of: forming the other of the side bodies or the flat bottom body containing silicon dioxide; and melting the one and the other with heat to integrate them. A method for manufacturing a quartz glass crucible for crystal pulling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2123141A JP2850153B2 (en) | 1990-05-15 | 1990-05-15 | Quartz glass crucible for pulling single crystal and method for producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2123141A JP2850153B2 (en) | 1990-05-15 | 1990-05-15 | Quartz glass crucible for pulling single crystal and method for producing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0421586A true JPH0421586A (en) | 1992-01-24 |
| JP2850153B2 JP2850153B2 (en) | 1999-01-27 |
Family
ID=14853207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2123141A Expired - Lifetime JP2850153B2 (en) | 1990-05-15 | 1990-05-15 | Quartz glass crucible for pulling single crystal and method for producing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2850153B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0965663A1 (en) * | 1998-06-18 | 1999-12-22 | Mitsubishi Material Quartz Corporation | Composite crucible, and preparation method and regeneration method thereof |
| JP2011057467A (en) * | 2009-09-07 | 2011-03-24 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Single crystal pulling apparatus |
| JP2011127839A (en) * | 2009-12-17 | 2011-06-30 | Toshiba Corp | Crucible made of tungsten, method of manufacturing the same and method of manufacturing sapphire single crystal |
| EP2325146A3 (en) * | 2009-11-20 | 2015-04-29 | Heraeus Quarzglas GmbH & Co. KG | Method of making a silica crucible in a controlled atmosphere |
-
1990
- 1990-05-15 JP JP2123141A patent/JP2850153B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0965663A1 (en) * | 1998-06-18 | 1999-12-22 | Mitsubishi Material Quartz Corporation | Composite crucible, and preparation method and regeneration method thereof |
| US6808744B2 (en) | 1998-06-18 | 2004-10-26 | Mitsubishi Material Quartz Corporation | Method for preparing and regenerating a composite crucible |
| EP1348783A3 (en) * | 1998-06-18 | 2005-04-20 | Japan Super Quartz Corporation | a method for regenerating a composite crucible |
| JP2011057467A (en) * | 2009-09-07 | 2011-03-24 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Single crystal pulling apparatus |
| EP2325146A3 (en) * | 2009-11-20 | 2015-04-29 | Heraeus Quarzglas GmbH & Co. KG | Method of making a silica crucible in a controlled atmosphere |
| JP2011127839A (en) * | 2009-12-17 | 2011-06-30 | Toshiba Corp | Crucible made of tungsten, method of manufacturing the same and method of manufacturing sapphire single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2850153B2 (en) | 1999-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1290250B1 (en) | Multilayered quartz glass crucible and method of its production | |
| JP5397857B2 (en) | Method and apparatus for producing quartz glass crucible | |
| JPWO2007063996A1 (en) | Quartz glass crucible and its manufacturing method and application | |
| JP6806672B2 (en) | A method for producing an isopipe and a glass ribbon having an edge step at the compressed end. | |
| JP2020117431A (en) | High-strength welding process for manufacturing heavy glass base material with large cross-sectional area | |
| JP2830990B2 (en) | Method for manufacturing double crucible made of quartz | |
| JP2850153B2 (en) | Quartz glass crucible for pulling single crystal and method for producing same | |
| JPS62212234A (en) | Production of glass | |
| JPH08151220A (en) | Method for molding quartz glass | |
| EP3088572A1 (en) | Quartz glass crucible and manufacturing method therefor | |
| JP3433976B2 (en) | Glass melting crucible | |
| JP2009508789A (en) | Welding method for joining components made of high silica material and apparatus for carrying out the method | |
| EP2141130A1 (en) | Method for producing vitreous silica crucible | |
| WO2022215505A1 (en) | Glass production method | |
| JPH06273587A (en) | Melt processing device for radioactive waste | |
| JPH02172888A (en) | Crucible for pulling silicon single crystals | |
| JPH02179803A (en) | Pouring vessel for manufacturing flake for nd series permanent magnet | |
| JPH0986947A (en) | Method for producing hollow silica glass preform for fiber | |
| JPS58148427A (en) | Quartz glass core tube for manufacture of semiconductor | |
| JP2003286041A (en) | Silica plate and method for producing silica plate | |
| JPS5888129A (en) | Production of quartz vessel | |
| JP2577585B2 (en) | Manufacturing method of quartz glass tube | |
| JPH08301620A (en) | Protective member and protective device for container for melting glass | |
| KR101659340B1 (en) | Apparatus for manufacturing high purity cylindrical quartz glass | |
| JPH0710583A (en) | Dehydration sintering furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071113 Year of fee payment: 9 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071113 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081113 Year of fee payment: 10 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081113 Year of fee payment: 10 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091113 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091113 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101113 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101113 Year of fee payment: 12 |