JPH04219400A - Method for polishing diamond - Google Patents
Method for polishing diamondInfo
- Publication number
- JPH04219400A JPH04219400A JP41221290A JP41221290A JPH04219400A JP H04219400 A JPH04219400 A JP H04219400A JP 41221290 A JP41221290 A JP 41221290A JP 41221290 A JP41221290 A JP 41221290A JP H04219400 A JPH04219400 A JP H04219400A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- polishing
- polishing plate
- plate
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 64
- 239000010432 diamond Substances 0.000 title claims abstract description 45
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 238000001530 Raman microscopy Methods 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- -1 iron and nickel Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】粒状及び膜状のダイヤモンドの研
磨法に関する。さらに詳しくは、天然あるいは高圧法合
成粒状ダイヤモンドの任意の部位面、ＣＶＤ法により析
出したダイヤモンド膜の凹凸面を、低負荷下に容易に平
滑研磨し得るようにしたダイヤモンドの研磨方法に関す
る。
【０００２】
【従来の技術】ダイヤモンド研磨法としては、天然ある
いは高圧合成単結晶ダイヤモンドの場合はダイヤモンド
パウダーを用いた共摺法、または鋳鉄円板を用いるスカ
イフ研磨法が用いられている。
【０００３】近年開発された新しい研磨法として、非酸
化性雰囲気下、ダイヤモンドを加熱された鉄又は鉄合金
と摺り合せて黒鉛化し、その黒鉛を活性化水素によって
除去することにより低負荷で容易に研磨する方法がある
（特願昭６０−１７５６６５、６１−１９８９００、６
１−２９２８５２）。
【０００４】
【発明が解決しようとする課題】ダイヤモンドパウダー
を用いる共摺法、または鋳鉄円板を用いるスカイフ研磨
法では、高い面圧を必要とする為、ＣＶＤダイヤモンド
膜のような薄膜ダイヤモンドの研磨に用いた場合、ダイ
ヤモンド膜が基材から剥離破損することが多く、それを
避ける為に低面圧で研磨すれば研磨速度が低下するとい
う難点があった。
【０００５】また、近年開発されたダイヤモンドと鉄製
研磨板を非酸化性雰囲気下、摺り合せて生成した黒鉛を
活性化水素で除去する新研磨法においても、研磨速度を
上げる為に金属製研磨板の温度をあげると研磨板が変形
して研磨精度が低下したり、またダイヤモンドが熱で変
質してしまうという問題があった。
【０００６】従来法の持つこれら欠陥を克服し、低負荷
で高効率研磨を行うことを目的とする本発明はダイヤモ
ンドと金属との高温での化学反応を制御し、さらに活性
化水素及び酸素による生成黒鉛のエッチング作用を促進
することにより研磨速度を大きくさせる一方、過度の加
熱によるダイヤモンドの変質の抑制、ならびに研磨板変
形抑制による研磨精度の向上をもたらす手段を提供する
ものである。
【０００７】
【課題を解決するための手段】本発明者は上記の目的を
達成すべくなされたものであり、その要旨はダイヤモン
ドの被研磨面のごく表層のみが黒鉛化され、黒鉛化され
た部分には速やかに活性化水素、酸素が導入され、黒鉛
が除去されるようにすることであり、活性化水素、酸素
にさらされない金属との接触面は過度に黒鉛化が進まな
いように、より低い温度に保たれるようにすることにあ
る。
【０００８】上記条件を確立するために本発明者は鋭意
研究した結果、研磨板にそれを貫通する小孔を研磨面に
数多く穿つことにより実現可能なることを見出し、本発
明を完成するに至ったものである。
【０００９】即ち本発明は、通電加熱されたフィラメン
ト上で回転する多孔研磨板においては、孔の周縁部はそ
の他の部分より高温状態になっていることに気付いたこ
とにより着想されたものであり、研磨板上を摺動する被
研磨ダイヤモンド面は孔部分を通過する時に表層部分の
みが黒鉛化され、且つ、孔を通じて供給される活性化水
素、酸素により速やかにエッチングされ除去される。孔
のない部分を摺動している時は、孔上及び孔周縁部より
低い温度に維持されている為、被研磨面、非研磨部とも
熱変質を受けることはない。
【００１０】また研磨面上の黒鉛の一部は、金属研磨面
上を摺動する間に金属内に拡散するものと推定され、両
者相俟って高い研磨速度が達成される。
【００１１】本発明に使用するダイヤモンド研磨用多孔
板には鉄、ニッケル等、炭化物を生成する金属ならびに
その合金を使用するのが実用上望ましい。
【００１２】本発明によるダイヤモンドの研磨メカニズ
ムを以下に略述する。まず、孔上および孔周縁部の高温
部でダイヤモンド被研磨面はフィラメントからの熱輻射
、ならびに研磨板からの熱伝導により短時間で高温加熱
されて被研磨面の表層のみが黒鉛化される。
【００１３】更に金属研磨板上を摺動中は被研磨面はよ
り低い温度に維持される為にダイヤモンド全体を変質さ
せることなく、金属研磨板接触部分のダイヤモンド表面
層のみが黒鉛に変質し、その他の部分が変質することは
ない。
【００１４】被研磨面に生成した黒鉛の一部は、研磨板
の孔を通してダイヤモンド被研磨面に効率的に供給され
る原子状水素、及び酸素と反応し炭化水素や炭酸ガス等
となって除去される。エッチングされなかった黒鉛、あ
るいは新たに生成してきた黒鉛は、従来の方法の場合と
同様に金属内に拡散される。
【００１５】上述のメカニズムにより、従来と同じフィ
ラメントへの負荷電力量で従来法に比べ飛躍的に高い研
磨速度が得られると同時に、研磨板全体に無理な加熱を
行わなくても充分な研磨が可能なため、熱による研磨板
の変形を最小限に抑えることができ、その結果高い研磨
精度が得られる。
【００１６】以下実施例により詳しく説明する。
【００１７】
【実施例】第１図に示されるような厚さ４ｍｍの多孔鉄
板を研磨板として用いた。第２図に示されるような厚さ
４ｍｍの多孔鉄板を研磨板として用いた。第２図に示さ
れるように凾体１内で通電加熱されたフィラメント８上
に多孔金属製研磨板６を設置し、研磨板６上にダイヤモ
ンド５をコーティングした基材４を取り付けた支持台３
を設置した。凾体内は水素雰囲気であり、凾体内圧力５
０Ｔｏｒｒ、凾体内に送り込む水素流量は１００ｃｃ／
ｍｉｎ 、研磨板６は毎分１０回転で回転させ、さらに
支持台３も自転させた。研磨板６の表面温度はフィラメ
ントの加熱により孔周縁部で９００℃、その他の部分は
７００℃に加熱された。この条件下で３０分研磨を行な
った結果、膜厚にして平均１２μｍ 研磨することがで
きた。また研磨後のダイヤモンド膜５の表面の顕微ラマ
ン分光分析を行なった結果、ラマンシフト１３３３ｃｍ
−１にダイヤモンド結晶による鋭いピーク１本のみを示
した。
【００１８】
【比較例】実施例の多孔鉄板の代わりに孔のない鉄板を
研磨板に用い、実施例と同じフィラメント電力で実験を
行なった。その結果、研磨板の表面温度は７００℃に加
熱された。その他の条件は実施例と全て同一にして研磨
を行なった。
【００１９】３０分間研磨後のダイヤモンド表面を観察
したところ、表面状態には殆ど何の変化も見られなかっ
た。
【００２０】
【発明の効果】本発明の方法によってダイヤモンドの研
磨を高速度且つ、高精度で行うことが可能となり、しか
も熱によるダイヤモンドの変質を防ぐことができるよう
になった。Description: [0001] The present invention relates to a method of polishing granular and film-like diamonds. More specifically, the present invention relates to a diamond polishing method that can easily smooth and smooth any surface of natural or high-pressure synthetic granular diamond, or the uneven surface of a diamond film deposited by the CVD method, under a low load. [0002] As a diamond polishing method, in the case of natural or high-pressure synthetic single crystal diamond, a co-sliding method using diamond powder or a scaife polishing method using a cast iron disc is used. As a new polishing method developed in recent years, diamond is rubbed against heated iron or iron alloy in a non-oxidizing atmosphere to graphitize it, and the graphite is removed with activated hydrogen, making it easy to polish with low load. There is a method of polishing (Japanese patent application No. 60-175665, 61-198900, 6)
1-292852). [0004] Problems to be Solved by the Invention: Since the co-printing method using diamond powder or the Scaife polishing method using a cast iron disk requires high surface pressure, it is difficult to polish a thin diamond film such as a CVD diamond film. When used for polishing, the diamond film often peels off from the base material and is damaged, and if polishing is performed at a low surface pressure to avoid this, the polishing speed decreases. Furthermore, in a new polishing method developed in recent years in which graphite produced by rubbing diamond and iron polishing plates together in a non-oxidizing atmosphere is removed using activated hydrogen, a metal polishing plate is used to increase the polishing speed. When the temperature is raised, the polishing plate deforms, reducing polishing accuracy, and the diamond changes in quality due to heat. The present invention, which aims to overcome these defects of the conventional method and perform high-efficiency polishing with low load, controls the chemical reaction between diamond and metal at high temperatures, and furthermore, it controls the chemical reaction between diamond and metal using activated hydrogen and oxygen. The present invention provides a means for increasing the polishing rate by promoting the etching action of produced graphite, while suppressing deterioration of diamond due to excessive heating, and improving polishing accuracy by suppressing deformation of the polishing plate. [Means for Solving the Problems] The present inventor has made it to achieve the above object, and the gist thereof is to graphitize only the very surface layer of the polished surface of diamond. Activated hydrogen and oxygen should be quickly introduced into the parts to remove graphite, and the contact surfaces with metals that are not exposed to activated hydrogen and oxygen should be prevented from becoming excessively graphitized. The purpose is to maintain a lower temperature. [0008] As a result of intensive research to establish the above conditions, the present inventor discovered that this could be achieved by drilling a large number of small holes in the polishing surface of the polishing plate, and completed the present invention. It is something that That is, the present invention was conceived based on the realization that in a porous polishing plate that rotates on a filament that is heated by electricity, the peripheral edge of the hole is in a higher temperature state than the other part. When the diamond surface to be polished sliding on the polishing plate passes through the holes, only the surface layer is graphitized, and is quickly etched and removed by activated hydrogen and oxygen supplied through the holes. When sliding on a part without a hole, the temperature is maintained lower than that of the top of the hole and the periphery of the hole, so neither the surface to be polished nor the unpolished part undergoes thermal deterioration. It is also presumed that some of the graphite on the polishing surface diffuses into the metal while sliding on the metal polishing surface, and a high polishing rate is achieved by the combination of the two. [0011] For the perforated diamond polishing plate used in the present invention, it is practically desirable to use metals that produce carbides, such as iron and nickel, and alloys thereof. The diamond polishing mechanism according to the present invention will be briefly described below. First, the surface of the diamond to be polished is heated to a high temperature in a short period of time in the high temperature area above the hole and around the hole by thermal radiation from the filament and heat conduction from the polishing plate, and only the surface layer of the surface to be polished is graphitized. Furthermore, since the polished surface is maintained at a lower temperature while sliding on the metal polishing plate, only the surface layer of the diamond in the contact area with the metal polishing plate changes to graphite without deteriorating the entire diamond. Other parts will not change in quality. A part of the graphite generated on the polished surface reacts with atomic hydrogen and oxygen, which are efficiently supplied to the diamond polished surface through the holes in the polishing plate, and becomes hydrocarbons, carbon dioxide, etc., and is removed. be done. The unetched graphite or newly formed graphite is diffused into the metal as in conventional methods. [0015] Due to the above-mentioned mechanism, a significantly higher polishing rate can be obtained compared to the conventional method with the same amount of electric power applied to the filament as in the conventional method, and at the same time, sufficient polishing can be achieved without excessively heating the entire polishing plate. Therefore, deformation of the polishing plate due to heat can be minimized, resulting in high polishing accuracy. [0016] This will be explained in detail below using examples. EXAMPLE A porous iron plate having a thickness of 4 mm as shown in FIG. 1 was used as a polishing plate. A porous iron plate with a thickness of 4 mm as shown in FIG. 2 was used as a polishing plate. As shown in FIG. 2, a porous metal polishing plate 6 is installed on a filament 8 that is heated by electricity in the case 1, and a support base 3 has a base material 4 coated with diamond 5 attached to the polishing plate 6.
was installed. There is a hydrogen atmosphere inside the shell, and the pressure inside the shell is 5.
0 Torr, hydrogen flow rate sent into the enclosure is 100cc/
min, the polishing plate 6 was rotated at 10 revolutions per minute, and the support base 3 was also rotated. The surface temperature of the polishing plate 6 was 900° C. at the periphery of the hole and 700° C. at the other portion due to the heating of the filaments. As a result of polishing for 30 minutes under these conditions, it was possible to polish the film to an average film thickness of 12 μm. Furthermore, as a result of micro-Raman spectroscopy analysis of the surface of the diamond film 5 after polishing, the Raman shift was 1333 cm.
-1 showed only one sharp peak due to diamond crystals. [Comparative Example] An experiment was conducted using an iron plate without holes as a polishing plate instead of the perforated iron plate of the example, and using the same filament power as in the example. As a result, the surface temperature of the polishing plate was heated to 700°C. Polishing was carried out under all other conditions the same as in the example. When the diamond surface was observed after polishing for 30 minutes, almost no change was observed in the surface condition. [0020] The method of the present invention has made it possible to polish diamond at high speed and with high precision, and also to prevent deterioration of diamond due to heat.
【図１】本発明の方法を実施するための多孔金属製研磨
板。孔の配置は１例であり、本図のみに限定されない。FIG. 1: A porous metal polishing plate for carrying out the method of the invention. The arrangement of the holes is just one example and is not limited to only this figure.
【図２】本発明に用いたダイヤモンド研磨装置の概念図
。FIG. 2 is a conceptual diagram of a diamond polishing apparatus used in the present invention.
１ 凾体 ２ 支持棒 ３ 回転機構付支持台 ４ 基材 ５ ダイヤモンド膜 ６ 多孔研磨板 ７ 排気管 ８ フィラメント ９ 研磨板回転駆動軸 １０ 水素ガス導入管 １１ 変速機付回転機 １２ 孔 1. Body 2 Support rod 3 Support stand with rotation mechanism 4 Base material 5 Diamond film 6 Porous polishing plate 7 Exhaust pipe 8 Filament 9 Polishing plate rotation drive shaft 10 Hydrogen gas introduction pipe 11 Rotating machine with transmission 12 holes
Claims (3)
属との化学反応を利用してダイヤモンドを研磨する方法
において、研磨板上に各々独立した多数の高温領域と、
それを取巻く低温領域を形成せしめ、且つ、活性化水素
、酸素を被研磨面に効率的に送り込むことを特徴とし、
その為の手段として穴あき研磨板を用いるダイヤモンド
の研磨法。1. A method of polishing a diamond by sliding it on a diamond polishing plate and utilizing a chemical reaction with a metal, the polishing plate having a number of independent high-temperature areas;
It is characterized by forming a low temperature region surrounding it, and efficiently sending activated hydrogen and oxygen to the surface to be polished,
A method of polishing diamonds using a perforated polishing plate.
、ＶＩＩＩ族金属並びにこれら合金からなる請求項１に
記載のダイヤモンドの研磨法。[Claim 2] The polishing plate is IVa, Va, VIa.
The diamond polishing method according to claim 1, comprising a group VIII metal, or an alloy thereof.
温領域を多数、研磨板上に形成する為に、研磨板上の各
孔センターは少なくとも８ｍｍ程度は互いに離れている
多孔研磨板を用いる請求項１、及び２に記載のダイヤモ
ンドの研磨法。3. In order to form a large number of independent high-temperature regions and a large number of surrounding low-temperature regions on the polishing plate, a porous polishing plate is used in which each hole center on the polishing plate is separated from each other by at least about 8 mm. The diamond polishing method according to items 1 and 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP41221290A JPH04219400A (en) | 1990-12-19 | 1990-12-19 | Method for polishing diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP41221290A JPH04219400A (en) | 1990-12-19 | 1990-12-19 | Method for polishing diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04219400A true JPH04219400A (en) | 1992-08-10 |
Family
ID=18521082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP41221290A Pending JPH04219400A (en) | 1990-12-19 | 1990-12-19 | Method for polishing diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04219400A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403619A (en) * | 1993-01-19 | 1995-04-04 | International Business Machines Corporation | Solid state ionic polishing of diamond |
| US6083354A (en) * | 1992-07-24 | 2000-07-04 | Matsushita Electric Industrial Co., Ltd. | Treatment method for diamonds |
-
1990
- 1990-12-19 JP JP41221290A patent/JPH04219400A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6083354A (en) * | 1992-07-24 | 2000-07-04 | Matsushita Electric Industrial Co., Ltd. | Treatment method for diamonds |
| US5403619A (en) * | 1993-01-19 | 1995-04-04 | International Business Machines Corporation | Solid state ionic polishing of diamond |
| US5795653A (en) * | 1993-01-19 | 1998-08-18 | International Business Machines Corporation | Method for polishing a diamond or carbon nitride film by reaction with oxygen transported to the film through a superionic conductor in contact with the film |
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