JPH0422025B2 - - Google Patents
Info
- Publication number
- JPH0422025B2 JPH0422025B2 JP58243954A JP24395483A JPH0422025B2 JP H0422025 B2 JPH0422025 B2 JP H0422025B2 JP 58243954 A JP58243954 A JP 58243954A JP 24395483 A JP24395483 A JP 24395483A JP H0422025 B2 JPH0422025 B2 JP H0422025B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- cooling device
- mist
- large number
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
- H10W40/73—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control for cooling by change of state
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は電子部品の冷却装置に係り、特に基板
上に多数搭載された半導体チツプの冷却に好適な
冷却装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a cooling device for electronic components, and particularly to a cooling device suitable for cooling a large number of semiconductor chips mounted on a substrate.
従来の電子部品の冷却装置として、半導体チツ
プを低沸点の液体中に浸漬し、半導体チツプ表面
にて液体を沸騰させる冷却方法が公表されている
（特界昭53−80565号）。しかし、沸騰特性は、加
熱開始時において、核沸騰領域に至るまでに大き
な過熱度を要する。この過熱度は理論的には水の
場合で百数十度にも達し得るが、実際にはそれよ
り相当小さい過熱度で核沸騰領域に遷移する。し
かし、この遷移点の過熱度は一義的には決定され
ず、個々のチツプ間、また、同一チツプであつて
もその運転時間（回数）によつて異なつたものと
なる。したがつて、半導体チツプ表面にて液体を
沸騰させる冷却方式では、同一過熱度で核沸騰が
行われたり、行われなかつたりするため、半導体
チツプの温度は、個々についてバラバラなものと
なり制御できないものとならざるを得ない。この
ことは、画一的に個々のチツプを冷却、温度制御
を行いたいハイブリツド実態では特に問題とな
る。
As a conventional cooling device for electronic components, a cooling method has been published in which a semiconductor chip is immersed in a low boiling point liquid and the liquid is boiled on the surface of the semiconductor chip (Special Kai No. 53-80565). However, the boiling characteristics require a large degree of superheating at the start of heating to reach the nucleate boiling region. Theoretically, this degree of superheating can reach over 100 degrees Celsius in the case of water, but in reality, the degree of superheating is considerably lower than that and transitions to the nucleate boiling region. However, the degree of superheating at this transition point is not uniquely determined, and varies between individual chips, and even for the same chip, depending on the operating time (number of times). Therefore, in a cooling method that boils liquid on the surface of a semiconductor chip, nucleate boiling may or may not occur at the same degree of superheating, so the temperature of each semiconductor chip varies and cannot be controlled. I have no choice but to do so. This becomes a particular problem in a hybrid situation where it is desired to uniformly cool and control the temperature of each individual chip.
本発明の目的は、基板のうねり等のためにそれ
に搭載された半導体チツプの表面が同一面上にな
くても、すべての半導体チツプの表面温度が均一
になるように冷却することができるような高性能
な半導体チツプの冷却装置を提供することにあ
る。
An object of the present invention is to provide a cooling system that can cool the semiconductor chips so that the surface temperature of all the semiconductor chips is uniform even if the surfaces of the semiconductor chips mounted on the board are not on the same plane due to undulation of the board. The purpose of the present invention is to provide a high-performance cooling device for semiconductor chips.
この発明の特徴は、個々の半導体チツプの背面
に飽和状態の液ミストを噴射し、LSIチツプ背面
で液ミストを蒸発させ、LSIチツプを冷却するこ
とを特徴とする。
The present invention is characterized in that a saturated liquid mist is injected onto the back surface of each semiconductor chip, and the liquid mist is evaporated on the back surface of the LSI chip to cool the LSI chip.
本発明の一実施例を第１図、第２図により説明
する。
An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
多数のLSIチツプ１が搭載された基盤２と多数
のノズル８が各LSIチツプ１と対向するように取
り付けられたハツト３とで密閉容器４を形成して
いる。冷媒導入管５より流入した液冷媒はノズル
８によりミスト９化され、LSIチツプ１背面に噴
霧される。ミスト９はLSIチツプ１背面に到達す
ると、LSIチツプ１により加熱され直ちに蒸発、
気化する。この蒸発によつてLSIチツプは熱を奪
われ冷却されるが、ミスト９の液滴径が小さいた
め、LSIチツプ上のミストは小さな過熱度でしか
も一様に蒸発する。蒸発した蒸気は蒸気出口６よ
り容器４外へ流出する。一般に、被冷却面上に薄
い液膜を形成し、この薄い液膜の蒸発によつて熱
を奪おうとする場合、液膜の厚さが薄い程その熱
抵抗は小さくなるが、液膜厚さを薄くすると乾き
面が発生し易くなり、被冷却面上に温度分布がで
き、また、全体として熱抵抗が大きくなる。一
方、本発明によれば、液をミスト化することによ
り、上記の液膜厚さを薄くすることと同様の熱抵
抗を小さくする効果が得られ、かつ、LSIチツプ
１の背面全体に強制的にミスト９を供給するた
め、乾き面の発生を防止することができる。ま
た、LSIチツプ１の発熱量が相当大きくなつた場
合においても、LSIチツプ１背面にミスト９を到
達させることができ、チツプ１背面が蒸気層で覆
われるといういわゆる膜沸騰状態を防止すること
ができる。 A sealed container 4 is formed by a base 2 on which a large number of LSI chips 1 are mounted and a hat 3 in which a large number of nozzles 8 are attached so as to face each LSI chip 1. The liquid refrigerant flowing through the refrigerant introduction pipe 5 is turned into mist 9 by the nozzle 8 and is sprayed onto the back surface of the LSI chip 1. When the mist 9 reaches the back of the LSI chip 1, it is heated by the LSI chip 1 and immediately evaporates.
Vaporize. This evaporation removes heat from the LSI chip and cools it, but since the droplet diameter of the mist 9 is small, the mist on the LSI chip evaporates uniformly with a small degree of superheating. The evaporated steam flows out of the container 4 through the steam outlet 6. Generally, when a thin liquid film is formed on the surface to be cooled and heat is removed by evaporation of this thin liquid film, the thinner the liquid film is, the smaller the thermal resistance becomes. If it is made thinner, a dry surface is likely to occur, creating a temperature distribution on the surface to be cooled, and increasing the thermal resistance as a whole. On the other hand, according to the present invention, by turning the liquid into a mist, it is possible to obtain the same effect of reducing thermal resistance as by reducing the thickness of the liquid film described above, and to forcefully cover the entire back surface of the LSI chip 1. Since the mist 9 is supplied to the area, it is possible to prevent the occurrence of dry surfaces. Furthermore, even when the amount of heat generated by the LSI chip 1 becomes considerably large, the mist 9 can reach the back surface of the LSI chip 1, and a so-called film boiling state in which the back surface of the chip 1 is covered with a layer of vapor can be prevented. can.
蒸気出口６より流出した蒸気は凝縮器１１に導
かれ、凝縮、液化後レシーバー１２に一旦溜めら
れる。レシーバー１２の液冷媒はポンプ１３によ
つて汲み上げられ、冷媒導入管５を経てノズル８
に供給される。一方、LSIチツプ１背面で蒸発せ
ずに液相の状態で残つた冷媒は、ドレーン７より
流出しレシーバー１２へ集められる。本実施例に
示した図では、凝縮器１１とレシーバー１２とを
別容器に分離したものを示したが同一容器として
もよい。また、各容器４ごとにポンプを設けたも
のを示したが、複数個の容器４に対して１台のポ
ンプを設けてもよい。 The steam flowing out from the steam outlet 6 is led to a condenser 11, and after being condensed and liquefied, it is temporarily stored in a receiver 12. The liquid refrigerant in the receiver 12 is pumped up by the pump 13 and passed through the refrigerant introduction pipe 5 to the nozzle 8.
supplied to On the other hand, the refrigerant remaining in a liquid phase without being evaporated on the back side of the LSI chip 1 flows out from the drain 7 and is collected in the receiver 12. In the drawings shown in this embodiment, the condenser 11 and receiver 12 are shown separated into separate containers, but they may be in the same container. Further, although a pump is provided for each container 4, one pump may be provided for a plurality of containers 4.
LSIチツプ１背面は、何も加工されていない平
滑面であつてもよいが、さらに大きな熱量を小さ
な熱抵抗で伝えるためには、第３〜５図の実施例
に示すようなフイン構造をLSIチツプ１背面に設
けることが有効である。なお、フイン構造物は
LSIチツプと一体でもよい。 The back surface of the LSI chip 1 may be a smooth surface without any processing, but in order to transmit an even larger amount of heat with a smaller thermal resistance, the back surface of the LSI chip 1 may have a fin structure as shown in the embodiments shown in FIGS. It is effective to provide it on the back side of the chip 1. In addition, the fin structure is
It may be integrated with the LSI chip.
第３図に示す実施例では、多数の互いに平行な
微細フイン１６が加工された板１５がLSIチツプ
１１背面に取り付けられている。本実施例により
実質的伝熱面積はLSIチツプ背面面積に対し２〜
４倍に拡大され、したがつて、熱抵抗は1/2〜1/4
に低減することができる。また、ミスト流に対
し、フイン１６の各面が迎え角を持つているた
め、ミストが面に垂直に当つた場合のようにミス
トがはじき飛ばされるという状況が防止でき、ミ
ストの捕捉能力が向上する。また、ミスト流の衝
突によつてLSIチツプに働く圧力も、ミストが面
に垂直に当る場合よりも小さくすることができ
る。しかし、ミスト流に対してフイン１６に陰の
部分ができることを避けるためには、フイン１６
の頂角を大きくとらなければならず、したがつ
て、フインの密度が小さくなり面積拡大率が小さ
くなるという欠点がある。 In the embodiment shown in FIG. 3, a plate 15 on which a large number of mutually parallel fine fins 16 are machined is attached to the back surface of the LSI chip 11. According to this example, the actual heat transfer area is 2 to 2 to the back surface area of the LSI chip.
Expanded by 4 times, therefore thermal resistance is 1/2 to 1/4
can be reduced to In addition, since each surface of the fin 16 has an angle of attack with respect to the mist flow, it is possible to prevent the mist from being blown off as would be the case when the mist hits the surface perpendicularly, and the mist capturing ability is improved. . Furthermore, the pressure exerted on the LSI chip due to the collision of the mist flow can be made smaller than when the mist hits the surface perpendicularly. However, in order to avoid forming a shadow part on the fin 16 against the mist flow, it is necessary to
The apex angle of the fins must be made large, which has the disadvantage that the density of the fins becomes small and the area expansion rate becomes small.
第４図に示す実施例では、放射状に配置された
フイン１８が加工された板１７をLSIチツプ１背
面に設けたものを示す。本実施例では、フイン１
８の頂角を小さくとつてもミスト流に対して陰と
なる部分ができないため、第３図に示す実施例の
ようにフイン密度が小さくなり面積拡大率が小さ
くなるという欠点をなくすることができる。ま
た、板１７に衝突した後のミスト流の流れ方向は
フイン１８の方向と同様に放射方向であるため、
ノズルよりの直接のミスト流が板全面に当らずと
もフイン１８の各部にミストを行き届けることが
できる。したがつて、ノズルと背面にフインが取
り付けられたLSIチツプとの距離を短くすること
ができるとともに、ノズル出口でのミスト広がり
角を考慮せずにノズルの設計をすることができ
る。また、本実施例に示すように、フイン１８の
谷部を中心に向つて順次高くすることによりさら
に上記の効果が強く得られる。 In the embodiment shown in FIG. 4, a plate 17 on which fins 18 arranged radially are processed is provided on the back surface of the LSI chip 1. In this embodiment, the fin 1
Even if the apex angle of 8 is made small, there will be no shaded area against the mist flow, so it is possible to eliminate the disadvantage that the fin density becomes small and the area expansion ratio becomes small as in the embodiment shown in Fig. 3. can. In addition, since the flow direction of the mist flow after colliding with the plate 17 is the radial direction similar to the direction of the fins 18,
Even if the direct mist flow from the nozzle does not hit the entire surface of the plate, the mist can be distributed to each part of the fin 18. Therefore, the distance between the nozzle and the LSI chip with fins attached to the back can be shortened, and the nozzle can be designed without considering the mist spread angle at the nozzle exit. Moreover, as shown in this embodiment, the above-mentioned effect can be obtained even more strongly by increasing the height of the troughs of the fins 18 toward the center.
第５図に示す実施例では、LSIチツプ１背面に
多孔板２１を取り付けたものの例を示す。多孔面
は約0.4mm×0.3mmのトンネル状の表皮下空洞２０
と約0.1mm直径の開口１９とによつて構成されて
いる。蒸発面として多孔面を用いると、ミスト流
量が蒸発量より多くなり蒸発面上に液が滞留する
状態下においても、表皮下空洞２０の内壁では非
常に薄い液膜が形成されるため小さな熱抵抗を維
持することができる。 In the embodiment shown in FIG. 5, a perforated plate 21 is attached to the back surface of the LSI chip 1. The porous surface is a tunnel-shaped subepidermal cavity 20 approximately 0.4 mm x 0.3 mm.
and an opening 19 with a diameter of about 0.1 mm. When a porous surface is used as the evaporation surface, a very thin liquid film is formed on the inner wall of the subepidermal cavity 20 even when the mist flow rate is greater than the amount of evaporation and the liquid remains on the evaporation surface, resulting in small thermal resistance. can be maintained.
本発明によれば、基盤上に多数配列されたLSI
チツプ個々の高さ、傾き、位置のバラツキにかか
わらず、小さな熱抵抗でかつ均一な温度にLSIチ
ツプを冷却することができる。
According to the present invention, a large number of LSIs arranged on a board
LSI chips can be cooled to a uniform temperature with low thermal resistance, regardless of variations in the height, tilt, or position of individual chips.
第１図は、本発明の一実施例による基盤上に搭
載された多数の半導体チツプを内蔵した密閉容器
の断面図。第２図は、本発明による半導体チツプ
冷却装置システムの一実施例。第３〜５図は各々
本発明の一実施例による半導体チツプの背面の斜
視図である。
１…半導体チツプ、２…基盤、３…ハツト、４
…密閉容器、５…液冷媒導入管、６…蒸気出口、
７…ドレーン、８…ノズル、９…噴射ミスト、１
１…凝縮器、１２…レシーバー、１３…ポンプ、
１６，１８…フイン、１９…開口、２０…表皮下
空洞。
FIG. 1 is a sectional view of a closed container containing a large number of semiconductor chips mounted on a base according to an embodiment of the present invention. FIG. 2 is an embodiment of a semiconductor chip cooling system according to the present invention. 3 to 5 are perspective views of the back side of a semiconductor chip according to an embodiment of the present invention. 1... Semiconductor chip, 2... Base, 3... Hat, 4
... Sealed container, 5... Liquid refrigerant introduction pipe, 6... Steam outlet,
7...Drain, 8...Nozzle, 9...Ejection mist, 1
1... Condenser, 12... Receiver, 13... Pump,
16, 18...fin, 19...opening, 20...subepidermal cavity.
Claims (1)
却する冷却装置において、密閉容器内に収納され
た多数の半導体チツプの個々の背面と対向する位
置に設けられた多数のノズルと、該ノズルから半
導体チツプの背面に飽和、或いは、わずかに過冷
却したミスト噴流を噴射し、該ミストを半導体チ
ツプ背面で蒸発させて半導体チツプを冷却する手
段と、半導体チツプ背面で蒸発、気化した蒸気
を、前記密閉容器内もしくは密閉容器外に設けら
れた凝縮器において凝縮液化させた後、レシーバ
ーを経て液ポンプにより再び前記ノズルへ戻す手
段を設けたことを特徴とする半導体チツプの冷却
装置。 ２ 特許請求の範囲第１項記載の冷却装置におい
て、半導体チツプ背面に微細な多数のフインを設
け、該微細な多数のフインはその全ての腹面に対
し前記液ミストが到達するようなフイン頂角とし
たことを特徴とする半導体チツプの冷却装置。 ３ 前記微細な多数のフインにおいて、フインを
放射状に配置したことを特徴とする特許請求の範
囲第２項記載の半導体チツプの冷却装置。 ４ 特許請求の範囲第３項記載の半導体チツプの
冷却装置において、放射状に配置された多数のフ
インの谷部もしくは谷部と屋根部両方が傘の骨状
に中央部へ向つて盛り上つていることを特徴とす
る半導体チツプの冷却装置。 ５ 特許請求の範囲第１項記載の半導体チツプの
冷却装置において、半導体チツプの背面に多孔質
層を有する板を取り付けたことを特徴とする半導
体チツプの冷却装置。[Claims] 1. In a cooling device for cooling a large number of semiconductor chips mounted on a substrate, a large number of nozzles are provided at positions facing the respective back surfaces of a large number of semiconductor chips housed in a closed container. a means for cooling the semiconductor chip by injecting a jet of saturated or slightly supercooled mist from the nozzle onto the back surface of the semiconductor chip, and evaporating and vaporizing the mist on the back surface of the semiconductor chip; A cooling device for semiconductor chips, characterized in that the device is provided with means for condensing and liquefying the vapor in a condenser provided inside or outside the sealed container, and then returning it to the nozzle via a receiver via a liquid pump. . 2. In the cooling device according to claim 1, a large number of fine fins are provided on the back surface of the semiconductor chip, and each of the large number of fine fins has a fin apex angle such that the liquid mist reaches the bottom surface of all of the fine fins. A semiconductor chip cooling device characterized by: 3. The semiconductor chip cooling device according to claim 2, wherein the plurality of fine fins are arranged radially. 4. In the cooling device for a semiconductor chip as set forth in claim 3, the valleys or both the valleys and the roof of the radially arranged fins swell toward the center like the ribs of an umbrella. A semiconductor chip cooling device characterized by: 5. A semiconductor chip cooling device according to claim 1, characterized in that a plate having a porous layer is attached to the back surface of the semiconductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58243954A JPS60136349A (en) | 1983-12-26 | 1983-12-26 | Cooling device for semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58243954A JPS60136349A (en) | 1983-12-26 | 1983-12-26 | Cooling device for semiconductor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60136349A JPS60136349A (en) | 1985-07-19 |
| JPH0422025B2 true JPH0422025B2 (en) | 1992-04-15 |
Family
ID=17111506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58243954A Granted JPS60136349A (en) | 1983-12-26 | 1983-12-26 | Cooling device for semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136349A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS632357A (en) * | 1986-06-19 | 1988-01-07 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Heatsink structure |
| US4912600A (en) * | 1988-09-07 | 1990-03-27 | Auburn Univ. Of The State Of Alabama | Integrated circuit packaging and cooling |
| US5220956A (en) * | 1992-01-24 | 1993-06-22 | Texas Instruments Incorporated | Multiple device fixture used in conjunction with a standard temperature forcing unit |
| US5316075A (en) * | 1992-12-22 | 1994-05-31 | Hughes Aircraft Company | Liquid jet cold plate for impingement cooling |
| US7992626B1 (en) * | 2004-01-30 | 2011-08-09 | Parker-Hannifin Corporation | Combination spray and cold plate thermal management system |
| US7331377B1 (en) * | 2004-01-30 | 2008-02-19 | Isothermal Systems Research, Inc. | Diamond foam spray cooling system |
| US20070119572A1 (en) * | 2005-11-30 | 2007-05-31 | Raytheon Company | System and Method for Boiling Heat Transfer Using Self-Induced Coolant Transport and Impingements |
| EP1860695A3 (en) | 2006-05-24 | 2010-06-16 | Raytheon Company | System and method of jet impingement cooling with extended surfaces |
| JP4554557B2 (en) * | 2006-06-13 | 2010-09-29 | トヨタ自動車株式会社 | Cooler |
| JP4978401B2 (en) * | 2007-09-28 | 2012-07-18 | パナソニック株式会社 | Cooling system |
| US9074825B2 (en) | 2007-09-28 | 2015-07-07 | Panasonic Intellectual Property Management Co., Ltd. | Heatsink apparatus and electronic device having the same |
| JP5252059B2 (en) * | 2011-10-11 | 2013-07-31 | パナソニック株式会社 | Cooling system |
| FR2986911A1 (en) * | 2012-02-10 | 2013-08-16 | Peugeot Citroen Automobiles Sa | Cooling device for cooling rechargeable battery in e.g. hybrid car, has solenoid valve to supply cooling liquid to main conduit in absence of receipt of alert or to auxiliary conduit to flood space in battery housing upon receipt of alert |
-
1983
- 1983-12-26 JP JP58243954A patent/JPS60136349A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60136349A (en) | 1985-07-19 |
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