JPH0422218B2 - - Google Patents

Info

Publication number
JPH0422218B2
JPH0422218B2 JP58201573A JP20157383A JPH0422218B2 JP H0422218 B2 JPH0422218 B2 JP H0422218B2 JP 58201573 A JP58201573 A JP 58201573A JP 20157383 A JP20157383 A JP 20157383A JP H0422218 B2 JPH0422218 B2 JP H0422218B2
Authority
JP
Japan
Prior art keywords
polycrystalline body
diffraction
sample
optical system
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58201573A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6093335A (ja
Inventor
Takeshi Yukino
Hisaaki Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP58201573A priority Critical patent/JPS6093335A/ja
Publication of JPS6093335A publication Critical patent/JPS6093335A/ja
Publication of JPH0422218B2 publication Critical patent/JPH0422218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP58201573A 1983-10-27 1983-10-27 多結晶体の結晶粒子状態の検出測定装置 Granted JPS6093335A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58201573A JPS6093335A (ja) 1983-10-27 1983-10-27 多結晶体の結晶粒子状態の検出測定装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58201573A JPS6093335A (ja) 1983-10-27 1983-10-27 多結晶体の結晶粒子状態の検出測定装置

Publications (2)

Publication Number Publication Date
JPS6093335A JPS6093335A (ja) 1985-05-25
JPH0422218B2 true JPH0422218B2 (fr) 1992-04-16

Family

ID=16443297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58201573A Granted JPS6093335A (ja) 1983-10-27 1983-10-27 多結晶体の結晶粒子状態の検出測定装置

Country Status (1)

Country Link
JP (1) JPS6093335A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013150758A1 (fr) * 2012-04-04 2013-10-10 信越化学工業株式会社 Procédé d'évaluation du degré d'orientation des cristaux dans un silicium polycristallin, procédé de sélection de baguettes de silicium polycristallin, et procédé de production de silicium monocristallin
WO2013190829A1 (fr) * 2012-06-18 2013-12-27 信越化学工業株式会社 Procédé d'évaluation du degré d'orientation des cristaux d'un silicium polycristallin, procédé de sélection de barreaux de silicium polycristallin, barreau de silicium polycristallin, lingot de silicium polycristallin et procédé de réalisation de silicium polycristallin

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139238A (ja) * 1986-12-01 1988-06-11 Natl Inst For Res In Inorg Mater 簡易型一次元走査ｘ線回折顕微鏡
JPS63139298A (ja) * 1986-12-01 1988-06-11 科学技術庁無機材質研究所長 モノクロメ−タ付簡易型一次元走査ｘ線回折顕微鏡
JPH0727080B2 (ja) * 1986-12-02 1995-03-29 科学技術庁無機材質研究所長 一次元走査ｘ線回折顕微鏡
JPH04164239A (ja) * 1990-10-26 1992-06-09 Natl Inst For Res In Inorg Mater 粉末ｘ線回折計
JP2904055B2 (ja) * 1995-05-30 1999-06-14 株式会社島津製作所 Ｘ線回折装置
NL1009012C2 (nl) 1998-04-28 1999-10-29 Stichting Tech Wetenschapp Werkwijze voor het bepalen van celparameters van een kristalstructuur onder toepassing van diffractie.
CN100485373C (zh) * 2004-07-14 2009-05-06 西南技术工程研究所 短波长x射线衍射测量装置和方法
JP5903900B2 (ja) * 2012-01-16 2016-04-13 住友金属鉱山株式会社 粒子存在比率算出方法及び粒子結晶サイズ算出方法
JP5923463B2 (ja) * 2013-06-26 2016-05-24 信越化学工業株式会社 多結晶シリコンの結晶粒径分布の評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
EP2818851B1 (fr) * 2013-06-26 2023-07-26 Malvern Panalytical B.V. Imagerie de diffraction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013150758A1 (fr) * 2012-04-04 2013-10-10 信越化学工業株式会社 Procédé d'évaluation du degré d'orientation des cristaux dans un silicium polycristallin, procédé de sélection de baguettes de silicium polycristallin, et procédé de production de silicium monocristallin
WO2013190829A1 (fr) * 2012-06-18 2013-12-27 信越化学工業株式会社 Procédé d'évaluation du degré d'orientation des cristaux d'un silicium polycristallin, procédé de sélection de barreaux de silicium polycristallin, barreau de silicium polycristallin, lingot de silicium polycristallin et procédé de réalisation de silicium polycristallin
CN104395740A (zh) * 2012-06-18 2015-03-04 信越化学工业株式会社 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法、多晶硅棒、多晶硅块以及单晶硅的制造方法
US9274069B2 (en) 2012-06-18 2016-03-01 Shin-Etsu Chemical Co., Ltd. Method for evaluating degree of crystalline orientation of polycrystalline silicon, method for selecting polycrystalline silicon rod, polycrystalline silicon rod, polycrystalline silicon ingot, and method for manufacturing monocrystalline silicon

Also Published As

Publication number Publication date
JPS6093335A (ja) 1985-05-25

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