JPH0423444B2 - - Google Patents

Info

Publication number
JPH0423444B2
JPH0423444B2 JP13185482A JP13185482A JPH0423444B2 JP H0423444 B2 JPH0423444 B2 JP H0423444B2 JP 13185482 A JP13185482 A JP 13185482A JP 13185482 A JP13185482 A JP 13185482A JP H0423444 B2 JPH0423444 B2 JP H0423444B2
Authority
JP
Japan
Prior art keywords
surface acoustic
electrodes
idt
grating
bus bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13185482A
Other languages
Japanese (ja)
Other versions
JPS5921114A (en
Inventor
Masaki Tanaka
Takefumi Kurosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP13185482A priority Critical patent/JPS5921114A/en
Publication of JPS5921114A publication Critical patent/JPS5921114A/en
Publication of JPH0423444B2 publication Critical patent/JPH0423444B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は弾性表面波、即ち、レーリー波である
SAW、SH波であるすべり波(SSBW)等を利用
した弾性表面波多重モード・フイルタの電極構造
に関する。
[Detailed Description of the Invention] (Industrial Application Field) The present invention is a surface acoustic wave, that is, a Rayleigh wave.
This article relates to the electrode structure of surface acoustic wave multimode filters that utilize shear waves (SSBW), which are SAW and SH waves.

(従来技術) 弾性表面波を利用した多重モード・フイルタに
ついては従来から数種類の構想が提案されている
がその最も基本的な形態は第1図aに示す如く圧
電基板1上に一対のインタデイジタル・トランス
ジユーサ(IDT)電極(共振器)2及び3をこれ
らが励起する弾性表面波の伝播方向に直角に並列
近接配置することによつて同図bに示す如く励起
した弾性表面波相互の音響結合の結果発生する対
称モード(共振周波数fs)及び反対称モード(共
振周波数fs)と称する共振周波数の互いに異なる
2つのモードの振動(同図c参照)を利用してフ
イルタを構成せんとするものである。
(Prior Art) Several types of multimode filters using surface acoustic waves have been proposed in the past, but the most basic form is a pair of interdigital filters on a piezoelectric substrate 1, as shown in Figure 1a.・By arranging transducer (IDT) electrodes (resonators) 2 and 3 in parallel and close to each other at right angles to the propagation direction of the surface acoustic waves they excite, mutual interaction between the excited surface acoustic waves is achieved as shown in Figure b. A filter is constructed by utilizing two modes of vibration with different resonant frequencies (see figure c), called the symmetric mode (resonant frequency fs) and the antisymmetric mode (resonant frequency fs), which are generated as a result of acoustic coupling. It is something.

この際faを中心周波数としfs−fa=Δfが通過帯
域のほぼ半幅となるフイルタが得られ、Δfは前
記音響結合の程度に支配されることが知られてい
る(特開昭59−131213号公報、特公平2−16613
号公報参照)。又、前記並列近接配置するIDT電
極(共振器)2,3のQを高め、各IDT内に振動
エネルギをより効率的に閉込める為、前記IDT電
極2,3の両側に反射器を設けるのが現実的であ
ることも周知である。
In this case, a filter is obtained in which fa is the center frequency and fs - fa = Δf is approximately half the width of the passband, and Δf is known to be controlled by the degree of acoustic coupling (Japanese Patent Laid-Open No. 59-131213). Publication, Special Publication No. 2-16613
(see publication). Further, reflectors are provided on both sides of the IDT electrodes 2 and 3 in order to increase the Q of the IDT electrodes (resonators) 2 and 3 arranged in parallel and close to each other and to more efficiently confine vibration energy within each IDT. It is also well known that this is realistic.

ところで、本願発明者等が前記近接配置した共
振器2,3間の音響結合発生条件についてSAW
共振器を用いて実験的検討を行つたところによれ
ば、回転Yカツト水晶基板を用いるならば前記両
共振器2,3のIDT電極指交叉幅wは両者間の共
通バスバー4を挟むIDT電極指非交叉幅gに依存
し、殊にこのgの値は高々励起したSAW波長λ
の3倍以下程度であることが判明した。斯る条件
下に於いては前記共通バスパー4の幅員は、中心
周波数100MHz、前記gの幅員1λと想定すれば、
20μm前後とする必要があり、このことは前記共
通バスバー4(これは必ず接地となる。フイルタ
には入出力端子A,Bが必須である故共通バスバ
ー4は設置しそのどこかで接地端子Cを設ける必
要があるからである。尚、フイルタの入出力端子
が相互に交換可能であることは周知であろう)に
直接接地用リード線をボンドし得ないのみなら
ず、前記SAW共振器2,3のQを高める為これ
らのIDT電極指対数を400乃至800に増加するか或
は前述した如く反射器を付すならば前記共通バス
バー4は長大なものとなるからそのオーミツクな
ロスが増大し、その結果フイルタ自体の挿入損失
増大を招くことは明らかであつた。
By the way, the inventors of the present application have conducted SAW regarding the acoustic coupling generation conditions between the resonators 2 and 3 arranged in close proximity.
According to an experimental study using a resonator, if a rotating Y-cut crystal substrate is used, the intersecting width w of the IDT electrode fingers of both resonators 2 and 3 is equal to the width of the IDT electrode sandwiching the common bus bar 4 between them. It depends on the finger non-crossing width g, and in particular, the value of this g is at most the excited SAW wavelength λ.
It turned out to be about 3 times or less. Under such conditions, assuming that the width of the common busper 4 is 100MHz at the center frequency and 1λ in the width of g,
It is necessary to set it to around 20 μm, and this means that the common bus bar 4 (this is always grounded).Since input/output terminals A and B are essential for the filter, the common bus bar 4 must be installed, and the ground terminal C must be connected somewhere on the common bus bar 4. (It is well known that the input and output terminals of the filter are interchangeable.) Not only is it not possible to directly bond the grounding lead wire to the SAW resonator 2, but also If the number of IDT electrode finger pairs is increased from 400 to 800 in order to increase the Q of , 3, or if a reflector is attached as described above, the common bus bar 4 will become long and its inherent loss will increase. It was clear that this resulted in an increase in the insertion loss of the filter itself.

(発明の目的) 本発明は上述した如き弾性表面波多重が有する
問題点を解決すべくなされたものであつて、共通
バスバーと接地用リード線との接続を容易にする
と共に共通バスバー長大化に伴うそのオーミツク
なロスを低減することを目的とする。
(Objective of the Invention) The present invention has been made to solve the problems of surface acoustic wave multiplexing as described above, and it facilitates the connection between the common bus bar and the grounding lead wire, and also reduces the length of the common bus bar. The purpose is to reduce the inherent loss associated with this process.

(発明の概要) 上述の目的を達成する為、本発明に係る弾性表
面波多重モード・フイルタはその共通バスバーを
励起した弾性表面波の伝播方向に沿つて反射器内
に延長すると共にその幅員を反射器に向けて漸増
せしめるようにしたものである。
(Summary of the Invention) In order to achieve the above-mentioned object, the surface acoustic wave multimode filter according to the present invention extends the common bus bar into the reflector along the propagation direction of the excited surface acoustic wave and widens its width. It is designed to gradually increase toward the reflector.

(実施例) 以下、本発明を図面に示した実施例によつて詳
細に説明する。
(Example) Hereinafter, the present invention will be explained in detail using examples shown in the drawings.

第2図は本発明に係るSAW2重モード・フイル
タの一実施例を示す電極構成図であつて、電圧基
板1上に形成した一対の比較的電極対数の少ない
IDT電極5及び6の共通バスバー7を前記両IDT
電極6,7の両側に設けた反射器8,9のグレー
テイング(金属ストリツプ)と接続することなく
これを横切る如く延長すると共にこれらグレーテ
イング中に於いて漸次その幅員を増大するように
し、前記反射器8,9の両端部に於ける最も幅員
大なる部分で接地用ワイヤをボンドせんとするも
のである。また、反射器8,9を構成するグレー
テイングの前記IDT電極共通バスバー7の延長部
と非接続で対面する側と反対側両端は非共通バス
バー10,10及び11,11と接続せしめる
(短絡型)。
FIG. 2 is an electrode configuration diagram showing one embodiment of the SAW dual mode filter according to the present invention, in which a pair of electrodes formed on the voltage substrate 1 have a relatively small number of pairs.
The common bus bar 7 of IDT electrodes 5 and 6 is connected to both IDTs.
The reflectors 8, 9 provided on both sides of the electrodes 6, 7 are extended across the gratings (metal strips) of the reflectors 8, 9 without being connected to them, and their widths are gradually increased within these gratings. The grounding wire is to be bonded at the widest portions at both ends of the reflectors 8 and 9. In addition, both ends of the grating constituting the reflectors 8, 9, which face the extended portion of the IDT electrode common bus bar 7 in a non-connected manner and on the opposite side thereof, are connected to the non-common bus bars 10, 10 and 11, 11 (short-circuit type ).

斯くすることによつて共通バスバー7の幅員が
極めて小なる部分は前記IDT電極5,6を接続す
る部分のみであり他は長さは大なるも幅員大であ
る故、本フイルタ接地線たる共通バスバー7のオ
ーミツクはロスは充分小さく抑えることが可能と
なる。
By doing this, the only part where the width of the common bus bar 7 is extremely small is the part that connects the IDT electrodes 5 and 6, and the other parts have a large width even though the length is large. The ohmic loss of the bus bar 7 can be kept sufficiently small.

しかしながら上述した如き電極構成に於いては
このフイルタの接地端子C1,C2はチツプの対向
辺近傍にあつてこれを収納するパツケージの内部
に露出する外部リードとの接続用パツドとの接続
に便なるとはいうものの、本フイルタの入出力
(ホツト)端子A,Bも足の対向辺に夫々分散す
る故ワイヤ・ボンダのヘツドの動線が長くなると
いう欠陥がある。
However, in the electrode configuration described above, the ground terminals C 1 and C 2 of this filter are located near the opposite sides of the chip and are connected to the pads for connecting to the external leads exposed inside the package that houses the chip. Although this is convenient, the input/output (hot) terminals A and B of this filter are also distributed on opposite sides of the legs, so the flow line of the head of the wire bonder becomes long.

この欠陥を解消したのが、第3図の第2の実施
例である。即ち、この欠陥を緩和する為には前記
反射器8,9中に延在する前記IDT電極の共通バ
スバーの延長部とその両側に整列するグレーテイ
ングの非共通バスバー10,10及び11,11
側両端を電気的に開放する。即ち、第2図に示し
た如き非共通バスバー10,10及び11,11
とグレーテイングとの接続をやめることが有効で
ある(開放型)。
The second embodiment shown in FIG. 3 eliminates this defect. That is, in order to alleviate this defect, an extension of the common bus bar of the IDT electrodes extending into the reflectors 8, 9 and non-common bus bars 10, 10 and 11, 11 of the grating aligned on both sides thereof are provided.
Both side ends are electrically opened. That is, non-common bus bars 10, 10 and 11, 11 as shown in FIG.
It is effective to disconnect the grating from the grating (open type).

そして、第3図に示す如く前記IDT電極5,6
の非共通バスバーの夫々一方の端部を反射器の延
在する方向に延長し、その端部を入出力用ホツト
端子A,Bとしてもよい。
Then, as shown in FIG. 3, the IDT electrodes 5, 6
One end of each of the non-common bus bars may be extended in the direction in which the reflector extends, and the ends may be used as input/output hot terminals A and B.

斯くすることによつて入出力用ホツト端子Aと
接地端子C2及び他のホツト端子Bと他の接地端
子C1とはペアをなしてチツプの両端部に集中す
るからワイヤ・ボンデイングのヘツドの動線を短
縮し量産時の生産効率を高めることができる。
By doing this, the input/output hot terminal A and the ground terminal C 2 and the other hot terminal B and the other ground terminal C 1 form a pair and are concentrated at both ends of the chip, making it easier to wire bond the head. It is possible to shorten the flow line and increase production efficiency during mass production.

尚、上記2実施例に於いて反射器グレーテイン
グの一端の第2図のもののように非共通バスバー
10,11から切り離したのは第2図に示す実施
例に於いては単にグレーテイングを金属膜のエツ
チングにより形成する際、このような形態の方が
グレーテイング両端をバスバーにより短絡したも
のより容易に所望のパターンを形成し得るからで
ある。
In the above two embodiments, one end of the reflector grating was separated from the non-common bus bars 10 and 11 as shown in FIG. 2. In the embodiment shown in FIG. 2, the grating was simply made of metal. This is because when forming the grating by etching the film, it is easier to form a desired pattern in this form than in the case where both ends of the grating are short-circuited by bus bars.

尚、金属のグレーテイングを以つて構成する反
射器には開放(オープン)型と短絡(シヨート)
型とがあるが両者の差異は、例えば水晶基板と
Al電極の組み合わせに於いては、IDT電極によ
つて励起されたSAWが反射器とグレーテイング
に当つて反射する際、波動の位相がIDTを発した
波動のそれに比してオープン型では90度遅れシヨ
ート型では90度進むと言う性質に存する。
In addition, there are two types of reflectors consisting of metal gratings: open type and short type.
There is a type, but the difference between the two is, for example, the crystal substrate and
In the combination of Al electrodes, when the SAW excited by the IDT electrode hits the reflector and grating and is reflected, the phase of the wave is 90 degrees in the open type compared to that of the wave emitted by the IDT. The delayed shot type has the property of advancing 90 degrees.

従つて反射器を有するSAW共振器等に於いて
はIDT電極と反射器との間のギヤツプを波動の位
相が揃うよう調整する(他の理由によつて調整す
る分もあるがこれらを含めて)が一般的であり、
この調整がなされる限り、オープン型とシヨート
型の反射器に電気的、音響的差異はない。
Therefore, in a SAW resonator etc. that has a reflector, the gap between the IDT electrode and the reflector must be adjusted so that the phases of the waves are aligned (although adjustments may be made for other reasons, including these) ) is common;
As long as this adjustment is made, there is no electrical or acoustic difference between open and short reflectors.

又、反射器中に幅員の漸増する共通バスバーが
存在することは反射器のSAW反射特性に何等か
の影響が発生する可能性があるが、実験の結果フ
イルタ特性に格別の影響はみられなかつた。更に
この反射器を横切るバスバーの形状は三角形であ
つても或はSAW伝播方向を長軸とし、これと直
交する反射器の幅方向を短軸とする長円の一部を
プロフイールとしたものでも大差はないであろ
う。
Also, the presence of a common bus bar with a gradually increasing width in the reflector may have some effect on the SAW reflection characteristics of the reflector, but as a result of experiments, no particular effect was observed on the filter characteristics. Ta. Furthermore, the shape of the bus bar that crosses this reflector may be triangular, or it may have a profile that is part of an ellipse whose major axis is the SAW propagation direction and whose minor axis is the width direction of the reflector perpendicular to this. There won't be much difference.

以上、本発明をSAW多重モード・フイルタを
例に説明したが本発明は弾性表面波としてSAW
を利用するものに限定される必然性はなく、IDT
電極によつて励起し得る他の波動、例えば−50度
或は+40度Yカツト水晶基板表面にAl電極を付
することによつて基板表面近傍の内部を伝播する
SSBW、YカツトLiNbO3基板にAu等の比重大な
る材質の電極を付することによつて基板表面直下
を伝播するラブ波及び36度YカツトLiTaO3基板
にAl電極を付することによつて基板表面直下を
伝播するブルースタイン−グーリエ−清水波を利
用するフイルタにも同様に適用可能であり、この
際には基板の電気機械結合係数等の特性上の差異
に基づいて所要の音響結合を得るべく第1図に示
したパラメータw,g等を調整すればよい。
The present invention has been explained above using a SAW multimode filter as an example, but the present invention also uses SAW as a surface acoustic wave.
It is not necessarily limited to those who use IDT.
Other waves that can be excited by the electrode, such as -50 degrees or +40 degrees, can be propagated inside near the substrate surface by attaching an Al electrode to the Y-cut crystal substrate surface.
SSBW, by attaching electrodes made of material such as Au to the Y-cut LiNbO 3 substrate, Love waves propagate just below the substrate surface, and by attaching Al electrodes to the 36 degree Y-cut LiTaO 3 substrate. It can be similarly applied to filters that utilize Brewstein-Gourier-Shimizu waves that propagate directly beneath the substrate surface, and in this case, the required acoustic coupling can be determined based on differences in characteristics such as the electromechanical coupling coefficient of the substrate. To obtain this, the parameters w, g, etc. shown in FIG. 1 may be adjusted.

(発明の効果) 本発明は以上説明したように構成するものであ
るから弾性表面波多重モード・フイルタに於いて
共通バスバーが極めて細かいものとなることに起
因するオーミツクなロスを減少すると共にこれを
接地する際のリード端子パツドを容易に形成する
ことが可能となるのでフイルタの挿入損失を減少
しその製造を容易にする上で著しい効果がある。
更にIDT電極及び反射器の非共通バスバーを接続
すれば入出力端子と接地端子とをペアとしてチツ
プの2つの周縁に互いに回転対称に集中すること
も可能である故、このフイルタをプリント板に実
装する際方向性を考慮する必要がなくなると云う
効果をも併せもつものである。
(Effects of the Invention) Since the present invention is constructed as described above, it is possible to reduce the common loss caused by the extremely fine common bus bar in a surface acoustic wave multimode filter, and also to eliminate this loss. Since the lead terminal pad for grounding can be easily formed, there is a significant effect in reducing the insertion loss of the filter and facilitating its manufacture.
Furthermore, by connecting the non-common busbars of the IDT electrodes and reflectors, it is possible to form a pair of input/output terminals and ground terminals and concentrate them rotationally symmetrically on the two peripheries of the chip. Therefore, it is possible to mount this filter on a printed board. This also has the effect that there is no need to consider directionality when doing so.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の基礎となる弾性表面波多重モ
ード・フイルタの原理説明図であつて、aはその
基本電極構成図、bは音響結合の状態を説明する
図、cは音響結合の結果発生する2つの波動のモ
ードを示す図、第2図は本発明の一実施例を示す
電極構成図、第3図は第2の実施例を示す電極構
成図である。 1……圧電基板、2,3,5及び6……IDT電
極、4,7……共通バスバー、8,9……反射
器。
FIG. 1 is a diagram explaining the principle of the surface acoustic wave multimode filter that is the basis of the present invention, in which a is a diagram of its basic electrode configuration, b is a diagram explaining the state of acoustic coupling, and c is the result of acoustic coupling. FIG. 2 is an electrode configuration diagram showing one embodiment of the present invention, and FIG. 3 is an electrode configuration diagram showing a second embodiment. 1... Piezoelectric substrate, 2, 3, 5 and 6... IDT electrode, 4, 7... Common bus bar, 8, 9... Reflector.

Claims (1)

【特許請求の範囲】 1 圧電基板上に複数個のインタデイジタル・ト
ランスジユーサ(IDT)電極をこれらが励起する
弾性表面波の伝播方向に直角に、且つ相互に並列
に近接配置すると共に、前記IDT電極の両端部に
該電極によつて励起された弾性表面波を反射する
反射器を配置し、前記複数個のIDT電極の共通バ
スバーの幅員を前記各電極によつて励起された弾
性表面波が互いに所要の音響結合を生ずるに足る
よう小さくした弾性表面波多重モード・フイルタ
に於いて、相隣り合う前記各IDT電極の共通バス
バーを前記反射器のグレーテイングと接続するこ
となくこれを横切つて延長せしめると共に前記グ
レーテイング中に於いて漸次その幅員を増大して
その両端を接地すると共にグレーテイング中に延
在する前記IDT電極共通バスバーの延長部と反対
側のグレーテイング両端部を電気的に短絡したこ
とを特徴とする弾性表面波多重モード・フイルタ
の電極構造。 2 圧電基板上に複数個のインタデイジタル・ト
ランスジユーサ(IDT)電極をこれらが励起する
弾性表面波の伝播方向に直角に、且つ相互に並列
に近接配置すると共に、前記IDT電極の両端部に
該電極によつて励起された弾性表面波を反射する
反射器を配置し、上記複数個のIDT電極の共通バ
スバーの幅員を前記各電極によつて励起された弾
性表面波が互いに所要の音響結合を生ずるに足る
よう小さくした弾性表面波多重モード・フイルタ
に於いて、相隣り合う前記各IDT電極の共通バス
バーを前記反射器のグレーテイングと接続しつつ
これを横切つて延長せしめ、且つ前記グレーテイ
ング中に於いて漸次その幅員を増大して、その反
射器端部に於ける終端を電気的に接地すると共に
前記グレーテイングの前記IDT電極共通バスバー
延長部と接続する側と反対側両端を開放したこと
を特徴とする弾性表面波多重モード・フイルタの
電極構造。 3 前記IDT電極が励起する弾性表面波が、
SAW、SSBW、ラブ波、又はブルースタイン−
グーリエ−清水波であることを特徴とする特許請
求の範囲1又は2記載の弾性表面波多重モード・
フイルタの電極構造。
[Scope of Claims] 1. A plurality of interdigital transducer (IDT) electrodes are disposed on a piezoelectric substrate at right angles to the propagation direction of the surface acoustic waves excited by these electrodes and in parallel with each other, and A reflector that reflects the surface acoustic waves excited by the electrodes is arranged at both ends of the IDT electrode, and the width of the common bus bar of the plurality of IDT electrodes is set to reflect the surface acoustic waves excited by the electrodes. In the surface acoustic wave multimode filter, which is made small enough to produce the required acoustic coupling with each other, the common bus bar of each of the adjacent IDT electrodes is crossed without being connected to the grating of the reflector. The width of the grating is gradually increased to ground both ends of the grating, and both ends of the grating opposite to the extension of the IDT electrode common bus bar extending in the grating are electrically connected to each other. An electrode structure of a surface acoustic wave multimode filter characterized by short-circuiting. 2. A plurality of interdigital transducer (IDT) electrodes are arranged close to each other in parallel to each other at right angles to the propagation direction of the surface acoustic waves they excite on a piezoelectric substrate, and at both ends of the IDT electrodes. A reflector is arranged to reflect the surface acoustic waves excited by the electrodes, and the width of the common bus bar of the plurality of IDT electrodes is arranged so that the surface acoustic waves excited by the electrodes are coupled with each other as required. In a surface acoustic wave multimode filter that is small enough to produce During grating, the width is gradually increased, and the terminal end at the reflector end is electrically grounded, and both ends of the grating are opened on the side opposite to the side connected to the IDT electrode common bus bar extension. The electrode structure of a surface acoustic wave multimode filter is characterized by: 3 The surface acoustic wave excited by the IDT electrode is
SAW, SSBW, Love Wave, or Bluestein
The surface acoustic wave multiple mode according to claim 1 or 2, characterized in that it is a Gourier-Shimizu wave.
Filter electrode structure.
JP13185482A 1982-07-27 1982-07-27 Electrode structure of high frequency narrow band multiplex mode filter Granted JPS5921114A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13185482A JPS5921114A (en) 1982-07-27 1982-07-27 Electrode structure of high frequency narrow band multiplex mode filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13185482A JPS5921114A (en) 1982-07-27 1982-07-27 Electrode structure of high frequency narrow band multiplex mode filter

Publications (2)

Publication Number Publication Date
JPS5921114A JPS5921114A (en) 1984-02-03
JPH0423444B2 true JPH0423444B2 (en) 1992-04-22

Family

ID=15067669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13185482A Granted JPS5921114A (en) 1982-07-27 1982-07-27 Electrode structure of high frequency narrow band multiplex mode filter

Country Status (1)

Country Link
JP (1) JPS5921114A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996015587A1 (en) * 1994-11-10 1996-05-23 Fujitsu Limited Acoustic wave filter

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936415A (en) * 1982-08-24 1984-02-28 Toyo Commun Equip Co Ltd Electrode structure of idt multimode filter provided with reflector
JPS6410482A (en) * 1987-07-03 1989-01-13 Hashimoto Corp Control system for vtr by computer
JP2539789Y2 (en) * 1990-06-04 1997-06-25 セイコーエプソン株式会社 Electrode structure of surface acoustic wave filter
JP6465047B2 (en) * 2016-02-19 2019-02-06 株式会社村田製作所 Elastic wave resonator, band-pass filter and duplexer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996015587A1 (en) * 1994-11-10 1996-05-23 Fujitsu Limited Acoustic wave filter

Also Published As

Publication number Publication date
JPS5921114A (en) 1984-02-03

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