JPH0424253U - - Google Patents
Info
- Publication number
- JPH0424253U JPH0424253U JP6461290U JP6461290U JPH0424253U JP H0424253 U JPH0424253 U JP H0424253U JP 6461290 U JP6461290 U JP 6461290U JP 6461290 U JP6461290 U JP 6461290U JP H0424253 U JPH0424253 U JP H0424253U
- Authority
- JP
- Japan
- Prior art keywords
- holder
- power supply
- faraday
- bias power
- relays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図は、この考案の一実施例に係るイオン注
入装置を示す図である。第２図は、この考案の背
景となるイオン注入装置の一例を示す図である。
２……イオンビーム、８……フアラデーケース
、１６……基板、１８……ホルダ、２０……フイ
ラメント、２４……フイラメント電源、２６……
フイラメント電流制御回路、３０……サプレツサ
電源、３２……エミツシヨン電源、３６……エミ
ツシヨン電流計測回路、４０……中性化制御回路
、４２……ホルダバイアス電源、４４……フアラ
デーバイアス電源、４６……ビーム電流計測器、
５０〜５９……リレー、６８……第１の抵抗、７
０……第２の抵抗。
FIG. 1 is a diagram showing an ion implantation apparatus according to an embodiment of this invention. FIG. 2 is a diagram showing an example of an ion implantation apparatus that is the background of this invention. 2... Ion beam, 8... Faraday case, 16... Substrate, 18... Holder, 20... Filament, 24... Filament power supply, 26...
Filament current control circuit, 30... Suppressor power supply, 32... Emission power supply, 36... Emission current measurement circuit, 40... Neutralization control circuit, 42... Holder bias power supply, 44... Faraday bias power supply, 46... Beam current measuring device,
50-59...Relay, 68...First resistor, 7
0...Second resistance.
Claims (1)
デーケースに当ててそこから二次電子を放出させ
、この二次電子をホルダ上のイオン注入されるべ
き基板に供給するようにしたイオン注入装置であ
つて、イオン注入時に前記ホルダに流れるビーム
電流を計測するビーム電流計測器と前記ホルダと
の間に、前記ホルダに正のバイアス電圧を与える
ホルダバイアス電源と前記フアラデーケースに正
のバイアス電圧を与えるフアラデーバイアス電源
とを直列に挿入すると共に、ホルダバイアス電源
の両端部にそれをバイパスさせる回路を構成する
第１および第２のリレーを直列に挿入し、かつフ
アラデーバイアス電源の両端部にそれをバイパス
させる回路を構成する第３および第４のリレーを
直列に挿入したものにおいて、前記第１および第
２のリレーの固定接点につながるライン同士間を
バイパスさせる第１の抵抗と、前記第３および第
４のリレーの固定接点につながるライン同士間を
バイパスさせる第２の抵抗とを設けたことを特徴
とするイオン注入装置。 An ion implantation device in which primary electrons emitted from a filament are applied to a Faraday case to emit secondary electrons therefrom, and the secondary electrons are supplied to a substrate on a holder into which ions are to be implanted. , a holder bias power supply that applies a positive bias voltage to the holder and a positive bias voltage to the Faraday case are provided between the holder and a beam current measuring device that measures the beam current flowing through the holder during ion implantation. A Faraday bias power supply is inserted in series with the Faraday bias power supply, and first and second relays constituting a circuit for bypassing it are inserted in series at both ends of the holder bias power supply, and both ends of the Faraday bias power supply are inserted in series. A first resistor that bypasses the lines connected to the fixed contacts of the first and second relays, and a first resistor that bypasses the lines connected to the fixed contacts of the first and second relays; An ion implantation device characterized by comprising a second resistor that bypasses lines connected to fixed contacts of the third and fourth relays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6461290U JPH0424253U (en) | 1990-06-19 | 1990-06-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6461290U JPH0424253U (en) | 1990-06-19 | 1990-06-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0424253U true JPH0424253U (en) | 1992-02-27 |
Family
ID=31595710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6461290U Pending JPH0424253U (en) | 1990-06-19 | 1990-06-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0424253U (en) |
-
1990
- 1990-06-19 JP JP6461290U patent/JPH0424253U/ja active Pending
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