JPH0424639Y2 - - Google Patents
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- Publication number
- JPH0424639Y2 JPH0424639Y2 JP2678587U JP2678587U JPH0424639Y2 JP H0424639 Y2 JPH0424639 Y2 JP H0424639Y2 JP 2678587 U JP2678587 U JP 2678587U JP 2678587 U JP2678587 U JP 2678587U JP H0424639 Y2 JPH0424639 Y2 JP H0424639Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- back electrode
- insulating layer
- insulating
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000010409 thin film Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 26
- 230000015556 catabolic process Effects 0.000 description 24
- 238000007740 vapor deposition Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000011295 pitch Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案は文字、図形等の情報をドツトマトリク
ス表示する薄膜ELマトリクス型デイスプレイパ
ネルに関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a thin film EL matrix type display panel that displays information such as characters and figures in a dot matrix.
従来の技術
薄膜ELマトリクス型デイスプレイパネルの構
造例を第２図を参照しながら説明する。Prior Art An example of the structure of a thin film EL matrix type display panel will be explained with reference to FIG.
尚、第２図の右半分はＸ方向の断面図、左半分
はＸ方向と直交するＹ方向の断面図である。 The right half of FIG. 2 is a sectional view in the X direction, and the left half is a sectional view in the Y direction orthogonal to the X direction.
第２図において、１は透光性基板であるガラス
基板、２は該ガラス基板１上に形成されたマトリ
クス型薄膜EL素子である。 In FIG. 2, 1 is a glass substrate which is a transparent substrate, and 2 is a matrix type thin film EL element formed on the glass substrate 1. In FIG.
この薄膜EL素子２における３は上記ガラス基
板１上にI.T.O等を蒸着法によりＹ方向に定ピツ
チで多数のストライプ状に形成した透明電極、４
は透明電極３及びガラス基板１上に、Al2O3やY2
O3等を蒸着又はスパツタ法で形成した透明な第
１の絶縁層、５はこの第１の絶縁層４上にZoＳ：
Mo等を蒸着法等で形成した発光層、６は該発光
層５上に、Al2O3やY2O3等を蒸着法やスパツタ法
により形成した透明な第２の絶縁層、７は第２の
絶縁層６上にＸ方向に定ピツチで多数のストライ
プ状に形成したAl蒸着膜による背面電極である。 In this thin film EL element 2, reference numeral 3 denotes a transparent electrode formed of a large number of stripes at a constant pitch in the Y direction using ITO or the like on the glass substrate 1 by vapor deposition;
is Al 2 O 3 or Y 2 on the transparent electrode 3 and glass substrate 1.
A transparent first insulating layer 5 formed of O 3 or the like by vapor deposition or sputtering method is formed on the first insulating layer 4 by Z o S:
6 is a transparent second insulating layer formed by vapor deposition or sputtering of Al 2 O 3 or Y 2 O 3 on the light emitting layer 5; is a back electrode made of an Al vapor-deposited film formed on the second insulating layer 6 in the form of a large number of stripes at regular pitches in the X direction.
尚、上記薄膜EL素子２を囲繞するように、凹
板状のカバーガラス８をガラス基板１上に接着材
を介して固着することにより、薄膜ELマトリク
ス型デイスプレイパネルが構成され、更に上記ガ
ラス基板１とカバーガラス８からなる外囲器内
に、薄膜EL素子２の耐湿性を向上させるためシ
リコンオイル等の絶縁性保護流体が封入される
（特開昭57−7086号公報）。 A thin film EL matrix type display panel is constructed by fixing a concave plate-shaped cover glass 8 on the glass substrate 1 via an adhesive so as to surround the thin film EL element 2. In order to improve the moisture resistance of the thin film EL element 2, an insulating protective fluid such as silicone oil is sealed in the envelope consisting of the thin film EL element 1 and the cover glass 8 (Japanese Patent Laid-Open No. 7086/1986).
この薄膜ELマトリクス型デイスプレイパネル
では、透明電極３と背面電極７が第３図に示すよ
うにマトリクス状に交差して、多数のマトリクス
状の画素ｍ，ｍ……を形成する。この透明電極３
と背面電極７の各一端部は、１本おきにガラス基
板１の反対側の周辺部上まで延設され、この両電
極３，７の延設端部間に駆動電圧を選択的に印加
すると、発光層５の画素部分が選択的に発光して
所望の情報のドツトマトリクス表示が行われる。 In this thin-film EL matrix type display panel, the transparent electrode 3 and the back electrode 7 intersect in a matrix shape as shown in FIG. 3, forming a large number of matrix-shaped pixels m, m, . . . . This transparent electrode 3
One end of each of the back electrodes 7 and 7 is extended to the opposite periphery of the glass substrate 1, and when a driving voltage is selectively applied between the extended ends of the two electrodes 3 and 7, , pixel portions of the light-emitting layer 5 selectively emit light to display desired information in a dot matrix.
ところで、上記薄膜EL素子２の形成時、第１
の絶縁層４、発光層５及び第２の絶縁層６の膜厚
が均一になるように積層形成するのは困難で、上
記各層４，５，６の膜厚が薄い箇所でピンホール
が発生し易かつた。この結果、透明電極３と背面
電極７間に駆動電圧を印加した際、第１の絶縁層
４、発光層５及び第２の絶縁層６に発生したピン
ホールを介して、上記透明電極３と背面電極７間
で放電現象が生じて両電極３，７が絶縁破壊され
る。 By the way, when forming the thin film EL element 2, the first
It is difficult to laminate the insulating layer 4, the light emitting layer 5, and the second insulating layer 6 so that the film thickness is uniform, and pinholes occur in places where the film thickness of each layer 4, 5, and 6 is thin. It was easy. As a result, when a driving voltage is applied between the transparent electrode 3 and the back electrode 7, the transparent electrode 3 and A discharge phenomenon occurs between the back electrode 7 and both electrodes 3 and 7 are dielectrically broken down.
ここで、上記背面電極７は、導電性や第２の絶
縁層６に対する接着性が良好で、比較的高融点
（660℃）を有するAl製のものであるため、上述
のように透明電極３と背面電極７間で絶縁破壊が
発生すると、Alでは蒸発飛散機能が乏しい故に、
その破壊域ａがスポツト状となる自己回復型絶縁
破壊［第４図参照］に留まらず、第５図に示すよ
うに破壊域ｂが背面電極７の全面に亘つて急速に
拡がる伝播型絶縁破壊へと至る。 Here, the back electrode 7 is made of Al, which has good conductivity and adhesion to the second insulating layer 6, and has a relatively high melting point (660° C.). When dielectric breakdown occurs between the electrode 7 and the back electrode 7, Al has a poor evaporation and scattering function.
This is not limited to self-healing dielectric breakdown in which the breakdown area a is spot-like [see Figure 4], but also propagation type dielectric breakdown in which the breakdown area b rapidly spreads over the entire surface of the back electrode 7 as shown in Figure 5. leading to.
このように伝播型絶縁破壊が発生して背面電極
７の全面に亘つて破壊域ｂは形成されると、その
背面電極７の画素ｍの断線により、その画素ｍか
ら給電点とは逆方向の全画素ｍ，ｍ……がすべて
発光不能となつてその表示機能が大幅に低下する
という問題点があつた。 When propagation-type dielectric breakdown occurs in this way and a breakdown area b is formed over the entire surface of the back electrode 7, the disconnection of the pixel m of the back electrode 7 causes a break from the pixel m in the opposite direction to the feeding point. There was a problem in that all the pixels m, m, .
そこで上記問題点を解決するための手段とし
て、前記背面電極７をSn，Zn，Pb，Cd，In，
Tl，Bi及びSbの群から選ばれたAlよりも低融点
の金属材料の１種、または２種以上の上記金属材
料の合金で形成したものが開発されている。 Therefore, as a means to solve the above problem, the back electrode 7 is made of Sn, Zn, Pb, Cd, In, etc.
One type of metal material selected from the group of Tl, Bi, and Sb having a lower melting point than Al, or an alloy of two or more of the above metal materials has been developed.
これは、蒸発拡散機能を有するAlよりも低融
点の金属材料を使用するため、透明電極３と背面
電極７間で絶縁破壊が発生した場合、上記背面電
極７での破壊点周辺部分を比較的低電流レベルで
瞬時に蒸発飛散させる。このように破壊域がスポ
ツト状となる自己回復型絶縁破壊を積極的に形成
して伝播型絶縁破壊を回避し、背面電極での断線
を未然に防止している。 This uses a metal material with a lower melting point than Al, which has an evaporation diffusion function, so when dielectric breakdown occurs between the transparent electrode 3 and the back electrode 7, the area around the breakdown point on the back electrode 7 is relatively Instant evaporation and scattering at low current levels. In this way, a self-healing dielectric breakdown in which the breakdown region is spot-like is actively formed to avoid propagation type dielectric breakdown and to prevent disconnection at the back electrode.
考案が解決しようとする問題点
ところが、上記材質で形成した背面電極７を有
する薄膜ELマトリクス型デイスプレイパネルで
は、上記背面電極７が一般にAlよりも低融点の
軟金属であるため、背面電極７形成後の諸工程に
おいて、ゴミ、異物の付着、装置や治工具類との
接触等によつて背面電極７が容易に損傷し、断線
しやすいという問題点が新たに生じてきた。Problems to be Solved by the Invention However, in a thin film EL matrix type display panel having a back electrode 7 made of the above-mentioned material, since the back electrode 7 is generally a soft metal with a lower melting point than Al, it is difficult to form the back electrode 7. In subsequent processes, a new problem has arisen in that the back electrode 7 is easily damaged by adhesion of dust, foreign matter, contact with equipment or jigs, etc., and is susceptible to disconnection.
そこで本考案の目的は、絶縁破壊発生時に背面
電極での破壊域の拡がりを抑止した自己回復機能
を有し、かつ背面電極形成後の薄膜ELパネル製
造工程中における背面電極の損傷を防止した薄膜
ELパネルを提供することにある。 Therefore, the purpose of this invention is to create a thin film that has a self-healing function that suppresses the spread of the breakdown area at the back electrode when dielectric breakdown occurs, and that also prevents damage to the back electrode during the manufacturing process of thin film EL panels after forming the back electrode.
Our goal is to provide EL panels.
問題点を解決するための手段
本考案は前記問題点に鑑みて提案されたもの
で、上記目的を達成するための技術的手段は、透
光性基板上に、ストライプ状の透明電極、第１の
絶縁層、発光層、第２の絶縁層、及びストライプ
状の背面電極を順次積層形成してなる薄膜EL素
子を有する薄膜ELパネルにおいて、Alよりも低
融点の金属材料または合金から成る背面電極の上
に、これよりも高融点・高硬度の絶縁性薄膜を適
切な膜厚で積層形成させたものである。Means for Solving the Problems The present invention has been proposed in view of the above-mentioned problems, and the technical means for achieving the above-mentioned object is to form striped transparent electrodes on a transparent substrate, In a thin film EL panel having a thin film EL element formed by sequentially laminating an insulating layer, a light emitting layer, a second insulating layer, and a striped back electrode, the back electrode is made of a metal material or alloy with a lower melting point than Al. On top of this, an insulating thin film with a higher melting point and higher hardness is laminated with an appropriate thickness.
作 用
本考案に係る薄膜ELパネルによれば、Alより
も低融点の金属材料、または合金からなる背面電
極上に、これよりも高硬度の絶縁性薄膜からなる
保護層を適切な膜厚で積層形成させたから、絶縁
破壊が発生しても、低融点金属による背面電極が
低電流レベルで瞬時に蒸発飛散するので破壊域が
拡がらず、自己回復機能を有し、伝播型絶縁破壊
を回避する機能を有すると共に、背面電極形成工
程以後の薄膜ELパネルの製造工程において、ゴ
ミ、異物等が付着しても、前記背面電極に直接付
着することがないので、ゴミ、異物等の除去時に
背面電極を損傷することを防止できる。又、高硬
度の絶縁性薄膜で保護層を形成したから、取扱い
中に装置や治工具類と接触しても背面電極が損傷
することを防止できる。Effects According to the thin film EL panel of the present invention, a protective layer made of an insulating thin film with higher hardness than Al is provided on the back electrode made of a metal material or alloy with a lower melting point than Al, with an appropriate thickness. Due to the laminated structure, even if dielectric breakdown occurs, the back electrode made of a low melting point metal will instantly evaporate and scatter at a low current level, so the breakdown area will not expand, and it has a self-healing function, avoiding propagating dielectric breakdown. In addition, even if dust or foreign matter adheres to the back electrode during the thin-film EL panel manufacturing process after the back electrode formation process, it will not directly adhere to the back electrode. Damage to the electrode can be prevented. Furthermore, since the protective layer is formed of a highly hard insulating thin film, the back electrode can be prevented from being damaged even if it comes into contact with equipment or tools during handling.
実施例
本考案に係る薄膜ELパネルの一実施例を第１
図を参照しながら説明する。なお、第１図の右半
分はＸ方向の断面図、左半分はＹ方向の断面図で
ある。第１図において、９は透光性基板であるガ
ラス基板、１０は該ガラス基板９上に形成された
本考案に係る薄膜EL素子である。この薄膜EL素
子１０における１１は前記ガラス基板９上にI.T.
O等を蒸着法等によりＹ方向に定ピツチで多数の
ストライプ状に形成した透明電極、１２は透明電
極１１及びガラス基板９上にAl2O3やY2O3等を蒸
着又はスパツタ等で形成した透明な第１の絶縁
層、１３はこの第１の絶縁層１２上に、ZnS：
Mn等を蒸着法等で形成した発光層、１４は該発
光層１３上に、Al2O3やY2O3等を蒸着やスパツタ
等で形成した透明な第２の絶縁層、１５はこの第
２の絶縁層１４上に蒸着法等でＸ方向に定ピツチ
で、多数のストライプ状に形成した金属薄膜によ
る背面電極である。この背面電極１５は、Alよ
りも低融点の金属材料、例えば前述したように
Sn，Zn，Pb，Cd，In，Tl，Bi，及びSbの群か
ら選ばれた金属材料の１種、または２種以上の上
記金属材料の合金で形成される。１６は背面電極
１５上に同一パターンで蒸着法等により積層形成
した本考案による絶縁性薄膜であり、背面電極１
５の保護膜である。この絶縁性薄膜１６は以下の
ようにして形成することができる。すなわち第１
図において、第２の絶縁層１４まで順次形成した
薄膜ELパネルをいつたん真空装置から外部へ取
り出し、微細ピツチで多数のストライプ状に溝穴
を形成したメタルマスクを第２の絶縁層１４上に
位置合わせ固定して再び真空装置に装着し、前記
背面電極１５を形成後、連続して絶縁性薄膜を蒸
着法等により所定の膜厚で積層形成する。この場
合、背面電極１５を形成後、薄膜ELパネルを真
空装置から外部へ取りだし、前記メタルマスクを
除去するか、又は別の形状を有するメタルマスク
を装着して後真空装置へもどして後、絶縁性薄膜
１６を積層形成してもよい。Example A first example of a thin film EL panel according to the present invention is shown below.
This will be explained with reference to the figures. The right half of FIG. 1 is a sectional view in the X direction, and the left half is a sectional view in the Y direction. In FIG. 1, 9 is a glass substrate which is a light-transmitting substrate, and 10 is a thin film EL element according to the present invention formed on the glass substrate 9. In FIG. 11 in this thin film EL element 10 is an IT on the glass substrate 9.
A transparent electrode 12 is formed by forming a large number of stripes of O, etc. at a constant pitch in the Y direction by vapor deposition, etc., and 12 is a transparent electrode made of Al 2 O 3 , Y 2 O 3 , etc., formed by vapor deposition or sputtering on the transparent electrode 11 and the glass substrate 9. The formed transparent first insulating layer 13 is formed on the first insulating layer 12 by ZnS:
14 is a transparent second insulating layer formed of Al 2 O 3 , Y 2 O 3 , etc. by vapor deposition or sputtering on the light emitting layer 13; The back electrode is a metal thin film formed in a large number of stripes at a constant pitch in the X direction on the second insulating layer 14 by vapor deposition or the like. This back electrode 15 is made of a metal material having a lower melting point than Al, for example, as described above.
It is formed of one kind of metal material selected from the group of Sn, Zn, Pb, Cd, In, Tl, Bi, and Sb, or an alloy of two or more of the above metal materials. Reference numeral 16 denotes an insulating thin film according to the present invention, which is laminated in the same pattern on the back electrode 15 by a vapor deposition method.
This is the protective film of No. 5. This insulating thin film 16 can be formed as follows. That is, the first
In the figure, the thin film EL panel that has been sequentially formed up to the second insulating layer 14 is taken out of the vacuum apparatus, and a metal mask with many striped grooves formed in fine pitches is placed on the second insulating layer 14. After positioning and fixing, it is again mounted in a vacuum apparatus, and after forming the back electrode 15, an insulating thin film is continuously formed to a predetermined thickness by a vapor deposition method or the like. In this case, after forming the back electrode 15, the thin film EL panel is taken out from the vacuum device, the metal mask is removed, or a metal mask with a different shape is attached, and then returned to the vacuum device and then insulated. The thin films 16 may be formed in layers.
絶縁性薄膜材料としては、A2O3，Y2O3，
SiO2，Ta2O5などの金属酸化物の単体又は混合膜
が使用できる。又、Si3N4などのシリコン窒化物
系材料との複でもよいし、前記金属酸化物とシリ
コン窒化物との複合膜でもよい。 Insulating thin film materials include A 2 O 3 , Y 2 O 3 ,
Single or mixed films of metal oxides such as SiO 2 and Ta 2 O 5 can be used. Further, it may be a composite film with a silicon nitride-based material such as Si 3 N 4 or a composite film of the metal oxide and silicon nitride.
絶縁性薄膜１６の膜厚は数1000A程度が望まし
い。数100A以下では十分な保護強度が得にくい
し、約1μ（10000A）以上では保護強度は十分であ
るが、絶縁破壊時に低融点の背面電極１５が容易
に蒸発飛散するのを抑制する方向に作用するの
で、背面電極１５による伝播性破壊防止効果を減
じる問題点が生じてくる。したがつて、絶縁性薄
膜の膜厚は、さらに望ましくは800A〜3000Aが
適切である。 The thickness of the insulating thin film 16 is preferably about several thousand amps. It is difficult to obtain sufficient protection strength below several 100 A, and although the protection strength is sufficient above approximately 1μ (10000 A), it acts in the direction of suppressing the back electrode 15, which has a low melting point, from easily evaporating and scattering in the event of dielectric breakdown. Therefore, a problem arises in that the effect of preventing propagation damage by the back electrode 15 is reduced. Therefore, the thickness of the insulating thin film is more preferably 800A to 3000A.
本考案による絶縁性薄膜１６は前述のメタルマ
スク法の他にリフトオフ法によつて形成してもよ
い。すなわち、第２の絶縁層１４形成後にフオト
レジストをストライプ状にパターニング形成した
後、前記背面電極１５を蒸着等で形成し、連続し
て絶縁性薄膜１６を蒸着等で形成した後、薄膜
ELパネルを真空装置から外部へ取り出し、フオ
トレジストを除去することによつてストライプ状
の背面電極１５と絶縁性薄膜１６を積層形成する
ことができる。この場合、背面電極を形成後外部
へ取り出してフオトレジストを除去し、再び真空
装置へ装着して絶縁性薄膜を積層形成してもよ
い。 The insulating thin film 16 according to the present invention may be formed by a lift-off method in addition to the metal mask method described above. That is, after forming the second insulating layer 14, a photoresist is patterned into stripes, the back electrode 15 is formed by vapor deposition, etc., the insulating thin film 16 is continuously formed by vapor deposition, etc., and then the thin film is formed.
By taking the EL panel out of the vacuum apparatus and removing the photoresist, a striped back electrode 15 and an insulating thin film 16 can be laminated. In this case, after the back electrode is formed, it may be taken out to the outside, the photoresist removed, and the insulating thin film may be laminated by mounting the back electrode in the vacuum apparatus again.
リフトオフ法でも、絶縁性薄膜材料は前記メタ
ルマスク法で使用した材料を使用できる。 In the lift-off method as well, the insulating thin film material used in the metal mask method can be used.
考案の効果
本考案に係る薄膜ELパネルによれば、Ａより
も低融点・低硬度の金属材料、または合金からな
る背面電極の保護膜としてこれよりも高硬度の絶
縁性薄膜を適切な膜厚で積層形成したから、パネ
ル駆動時に透明電極と背面電極間で絶縁破壊が発
生しても、その破壊域が伝播型破壊に至ることな
くスポツト状の自己回復型破壊に留めることが実
現可能になつて、背面電極の断線を未然に防止す
る機能を有すると共に、背面電極形成工程以後の
薄膜ELパネル製造工程において、背面電極が損
傷することを防止することができて、信頼性の高
い薄膜ELパネルを高い歩留で提供できる。Effects of the invention According to the thin film EL panel according to the invention, an insulating thin film with higher hardness than A is used as a protective film for the back electrode made of a metal material or alloy with a lower melting point and lower hardness than A. Because of the laminated structure, even if dielectric breakdown occurs between the transparent electrode and the back electrode when the panel is driven, it is possible to limit the breakdown to a spot-like, self-healing breakdown without causing a propagation type breakdown. In addition to having the function of preventing disconnection of the back electrode, it also prevents the back electrode from being damaged in the thin film EL panel manufacturing process after the back electrode formation process, making it a highly reliable thin film EL panel. can be provided with high yield.
第１図は本考案に係る薄膜ELパネルの一実施
例を示す断面図で、右半分はＸ方向の断面図、左
半分はＹ方向の断面図である。第２図は従来の薄
膜ELパネルの構造例を示す断面図で、右半分は
Ｘ方向の断面図、左半分はＹ方向の断面図、第３
図は薄膜ELパネルでの画素部分を示す部分拡大
平面図、第４図は背面電極での自己回復型絶縁破
壊を示す部分拡大平面図、第５図は背面電極での
伝播型絶縁破壊を示す部分拡大平面図である。
９……透光性基板、１０……薄膜EL素子、１
１……透明電極、１２……第１の絶縁層、１３…
…発光層、１４……第２の絶縁層、１５……背面
電極、１６……絶縁性薄膜。
FIG. 1 is a sectional view showing an embodiment of a thin film EL panel according to the present invention, with the right half being a sectional view in the X direction and the left half being a sectional view in the Y direction. Figure 2 is a cross-sectional view showing an example of the structure of a conventional thin-film EL panel; the right half is a cross-sectional view in the X direction, the left half is a cross-sectional view in the Y direction, and the third
The figure is a partially enlarged plan view showing the pixel portion of a thin-film EL panel, Figure 4 is a partially enlarged plan view showing self-healing dielectric breakdown at the back electrode, and Figure 5 is a partially enlarged plan view showing propagation type dielectric breakdown at the back electrode. FIG. 3 is a partially enlarged plan view. 9...Transparent substrate, 10...Thin film EL element, 1
DESCRIPTION OF SYMBOLS 1... Transparent electrode, 12... First insulating layer, 13...
...Light emitting layer, 14...Second insulating layer, 15...Back electrode, 16...Insulating thin film.
Claims (1)
１の絶縁層、発光層、第２の絶縁層及びストライ
プ状の背面電極を順次積層形成してなる薄膜EL
素子を有する薄膜ELパネルにおいて、 Alよりも低融点の金属材料または合金から成
る背面電極上に、これよりも高融点、高硬度の絶
縁性薄膜を積層形成したことを特徴とする薄膜
ELパネル。[Claims for Utility Model Registration] A thin film EL in which a striped transparent electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a striped back electrode are sequentially laminated on a transparent substrate.
A thin film EL panel having an element, characterized in that an insulating thin film with a higher melting point and higher hardness is laminated on a back electrode made of a metal material or alloy with a lower melting point than Al.
EL panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2678587U JPH0424639Y2 (en) | 1987-02-24 | 1987-02-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2678587U JPH0424639Y2 (en) | 1987-02-24 | 1987-02-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63134497U JPS63134497U (en) | 1988-09-02 |
| JPH0424639Y2 true JPH0424639Y2 (en) | 1992-06-10 |
Family
ID=30828192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2678587U Expired JPH0424639Y2 (en) | 1987-02-24 | 1987-02-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0424639Y2 (en) |
-
1987
- 1987-02-24 JP JP2678587U patent/JPH0424639Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63134497U (en) | 1988-09-02 |
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