JPH0424901A - Manufacture of semiconductor ceramic having positive temperature coefficient resistance - Google Patents
Manufacture of semiconductor ceramic having positive temperature coefficient resistanceInfo
- Publication number
- JPH0424901A JPH0424901A JP12581990A JP12581990A JPH0424901A JP H0424901 A JPH0424901 A JP H0424901A JP 12581990 A JP12581990 A JP 12581990A JP 12581990 A JP12581990 A JP 12581990A JP H0424901 A JPH0424901 A JP H0424901A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- resistance
- compact
- temperature
- temperature coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 238000007872 degassing Methods 0.000 claims 1
- 239000011572 manganese Substances 0.000 abstract description 13
- SZINCDDYCOIOJQ-UHFFFAOYSA-L manganese(2+);octadecanoate Chemical compound [Mn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O SZINCDDYCOIOJQ-UHFFFAOYSA-L 0.000 abstract description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000807 Ga alloy Inorganic materials 0.000 abstract description 2
- 239000011230 binding agent Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910010252 TiO3 Inorganic materials 0.000 abstract 1
- -1 YCl Chemical compound 0.000 abstract 1
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract 1
- 235000010216 calcium carbonate Nutrition 0.000 abstract 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 abstract 1
- 229910000018 strontium carbonate Inorganic materials 0.000 abstract 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電気抵抗値が温度によって変化する正の抵抗
温度特性を有する半導体磁器に関し、特に抵抗温度係数
を向上しながら、室温領域における抵抗値を小さくでき
るようにした半導体磁器の製造方法に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a semiconductor porcelain having a positive resistance-temperature characteristic in which the electrical resistance value changes depending on the temperature, and in particular, the present invention relates to a semiconductor porcelain having a positive resistance-temperature characteristic in which the electrical resistance value changes depending on the temperature. The present invention relates to a method for manufacturing semiconductor ceramics that allows the value to be reduced.
ある特定の温度で導体から絶縁体に移行する正の抵抗温
度特性を有する半導体磁器は、例えばテレビのブラウン
管枠の消磁用として、あるいはモータの起動用として広
く使われている。このような半導体磁器においては、室
温領域での抵抗値を小さくすることにより大電流制御を
安定した状態で行うことができ、しかも素子を小型化で
きる。Semiconductor porcelain, which has a positive resistance-temperature characteristic that changes from a conductor to an insulator at a certain temperature, is widely used, for example, for degaussing cathode ray tube frames of televisions or for starting motors. In such semiconductor ceramics, by reducing the resistance value in the room temperature region, large current control can be performed in a stable state, and the device can be made smaller.
ところが半導体磁器を単に低抵抗化すると抵抗温度係数
も低下するという問題が生じる。この抵抗温度係数を改
善するために、従来、セラミクス原料粉にＣｕ、Ｆｅ、
Ｍｎ等を添加し、これを一体焼結して半導体磁器を得る
方法が知られている。However, simply reducing the resistance of semiconductor ceramics causes the problem that the temperature coefficient of resistance also decreases. In order to improve this resistance temperature coefficient, Cu, Fe,
A method is known in which semiconductor ceramics are obtained by adding Mn or the like and integrally sintering the mixture.
しかし、上記セラミクス粉末にＭｎ等を添加して焼成し
たものは、抵抗温度係数は向上できるものの、逆に比抵
抗が増大することから大電流を制御する機能が低下する
という問題がある。However, although the ceramic powder obtained by adding Mn or the like to the ceramic powder and firing it can improve the temperature coefficient of resistance, there is a problem in that the specific resistance increases and the ability to control large currents deteriorates.
そこで、抵抗温度係数を向上しながら比抵抗を小さくで
きるようにした半導体磁器の製造方法が提案されている
（特公昭５０−３６０３５号公報参照）。Therefore, a method for manufacturing semiconductor ceramics has been proposed in which the resistivity can be reduced while improving the temperature coefficient of resistance (see Japanese Patent Publication No. 36035/1983).
これは、セラミクス粉末を焼成して焼結体を形成し、こ
の焼結体をＭｎ、Ｃｕ、Ｆｅ等を含む溶液中に浸漬した
後、加熱処理することにより、焼結体の粒子の表面部分
のみ上記金属イオンを拡散２せたものである。これによ
れば、抵抗温度係数４改善しながら、室温領域における
低抵抗化を実りできる。This method involves firing ceramic powder to form a sintered body, immersing this sintered body in a solution containing Mn, Cu, Fe, etc., and then heat-treating the surface of the particles of the sintered body. Only the metal ions mentioned above are diffused. According to this, it is possible to reduce the resistance in the room temperature region while improving the temperature coefficient of resistance by 4.
しかしながら上記公報による半導体磁器の型止方法は、
焼結体を溶液中に浸漬してＭｎ等の金運を拡散させる方
法であることから、水溶液が焼結体の内部まで浸透し難
く、焼結体の表面と内部とで濃度差が生じるという問題
点がある。その結果室温饅域における抵抗値の低減が不
充分であるということが判明した。However, the method for molding semiconductor porcelain according to the above publication is
Since this method involves immersing a sintered body in a solution to diffuse Mn and other metals, it is difficult for the aqueous solution to penetrate into the inside of the sintered body, resulting in a concentration difference between the surface and inside of the sintered body. There is a problem. As a result, it was found that the reduction in resistance value in the room temperature region was insufficient.
本発明の目的は、上記焼結体内に金属を拡散させる際の
濃度差を解消して、抵抗温度係数を向上しながら比抵抗
をさらに小さくでき、ひいて大電流化や素子の小型化に
貢献できる正の抵抗温度特性を有する半導体磁器の製造
方法を提供することにある。The purpose of the present invention is to eliminate the concentration difference when metal is diffused into the sintered body, thereby making it possible to further reduce the specific resistance while improving the temperature coefficient of resistance, thereby contributing to higher currents and smaller devices. An object of the present invention is to provide a method for manufacturing semiconductor porcelain having positive resistance-temperature characteristics.
ｃ問題点を解決するための手段〕
本件発明者らは、焼結体内に金属を拡散させる方法につ
いて鋭意検討したところ、金属元素を含む気体雰囲気中
に焼結体を保持することにより、該焼結体の表面部及び
内部にわたって金属が拡散することを見出し、本発明を
成したものである。c) Means for Solving the Problem] The inventors of the present invention have conducted intensive studies on a method of diffusing metal into a sintered body, and found that by holding the sintered body in a gaseous atmosphere containing metal elements, the sintered body can be diffused into a sintered body. The present invention was based on the discovery that metal diffuses throughout the surface and inside of the solid.
そこで本発明は、セラミクス焼結体にＭｎ、Ｃｒ、Ｆｅ
、Ｃｕの何れか１種以上の元素を含む気体を吸着させ、
この後脱気、加熱処理を施すことにより、上記焼結体内
に上記金属を拡散させたことを特徴とする正の抵抗温度
特性を有する半導体磁器の製造方法である。Therefore, the present invention provides a ceramic sintered body with Mn, Cr, and Fe.
, adsorbing a gas containing one or more elements of Cu,
This method of manufacturing semiconductor ceramics having positive resistance-temperature characteristics is characterized in that the metal is diffused into the sintered body by subsequently performing deaeration and heat treatment.
ここで、上記焼結体内にＭｎ、Ｃｒ等の金属を吸着させ
る場合、該金属が焼結体の各粒子の粒界部分にのみ吸着
し、該粒子の中心部まで達しないようする必要がある。Here, when adsorbing metals such as Mn and Cr into the sintered body, it is necessary to ensure that the metals are adsorbed only to the grain boundaries of each particle of the sintered body and do not reach the center of the particles. .
このようにすることにより、半導体化を阻害することな
く抵抗温度係数を向上できるからである。また、金属を
粒界部分にのみ吸着させるには、焼結体の加熱温度を適
宜設定することにより実現でき、具体的には５００〜１
２００℃の範囲内が望ましい。This is because by doing so, the temperature coefficient of resistance can be improved without impeding semiconductor formation. In addition, in order to adsorb metal only to the grain boundary portion, this can be achieved by appropriately setting the heating temperature of the sintered body.
The temperature is preferably within the range of 200°C.
本発明に係る正の抵抗温度特性を有する半導体磁器の製
造方法によれば、セラミクス焼結体を、Ｍｎ、Ｃｒ等の
金属を１種以上含む気体雰囲気中に保持したので、該焼
結体の微細な隙間から中心部まで気体が確実に侵入し、
該焼結体の粒子に上記金属が物理的、化学的に吸着する
こととなる。According to the method for manufacturing semiconductor porcelain having positive resistance-temperature characteristics according to the present invention, the ceramic sintered body is held in a gas atmosphere containing one or more metals such as Mn and Cr. Gas reliably enters from minute gaps to the center,
The metal is physically and chemically adsorbed to the particles of the sintered body.
この後、余分な気体を脱気して吸着した金属のみ焼結体
内に残し、これを加熱処理することにより金属を粒子の
粒界部分にのみ拡散できる。その結果、従来公報のよう
な焼結体の内部と表面部との濃度差を解消でき、ひいて
は抵抗温度係数を向上させながら、室温領域における比
抵抗をさらに小さくできる。Thereafter, excess gas is degassed, leaving only the adsorbed metal in the sintered body, and by heat-treating this, the metal can be diffused only into the grain boundaries of the particles. As a result, the difference in concentration between the inside and the surface of the sintered body as disclosed in the prior art can be eliminated, and the specific resistance in the room temperature region can be further reduced while improving the temperature coefficient of resistance.
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
第１図は本発明の一実施例による半導体磁器の製造方法
を説明するための真空加熱装置を示し、本実施例では円
板状の半導体磁器を製造する場合を例にとって説明する
。FIG. 1 shows a vacuum heating apparatus for explaining a method for manufacturing semiconductor porcelain according to an embodiment of the present invention, and in this embodiment, the case of manufacturing a disk-shaped semiconductor porcelain will be explained as an example.
■ まず、原材料として、Ｂ ａ ＣＯｓ ＋ Ｓ
ｒ Ｃ０３、Ｐ ｂｓ Ｏａ 、 Ｃａ ＣＯ３
、ＹＣＩｌ、Ｔ １ｏｚＳｉｎ、を採用し、これらが以
下の組成となるよう調合した。■ First, as raw materials, B a COs + S
r CO3, P bs Oa, Ca CO3
, YCIl, and T 1ozSin, and these were mixed to have the following composition.
（Ｂ ａｏ、ｈ３？＋ Ｓ ｒｏ、＋ｚ＋ Ｐ ｂ
ａ、ｏｑ＋ Ｃａａ、＋ｓ。(B ao, h3?+ S ro, +z+ P b
a, oq+ Caa, +s.
Ｙｏ、ｏｏｓ ） Ｔ Ｉ Ｏｘ ”０．０１５１０ｈ
このように調合したセラミクス原料を、ポンドミルで５
時間混式混合し、脱水、乾燥した後、１１５０℃×２時
間で仮焼成する。Yo, oos) T I Ox ”0.01510h
The ceramic raw materials prepared in this way are milled in a pound mill for 50 minutes.
After time mixing, dehydration, and drying, the mixture is pre-calcined at 1150° C. for 2 hours.
■ 次に上記仮焼成したセラミクス粉末にバインダー（
酢酸ビニル）を加えて、さらにポンドミルで５時間混合
し、脱水、乾燥して造粒する。この後、油圧プレスによ
り２ｔ７ｃＩ１１の圧力で直径１７ｗＸ厚さ１ｆｉの円
板状の成形体を得る。この成形体を１３６０℃で所定時
間焼成し、セラミクス焼結体を得る。■ Next, add a binder (
Vinyl acetate) is added thereto, and the mixture is further mixed in a pound mill for 5 hours, dehydrated, dried, and granulated. Thereafter, a disk-shaped molded body having a diameter of 17w and a thickness of 1fi is obtained using a hydraulic press at a pressure of 2t7cI11. This molded body is fired at 1360° C. for a predetermined time to obtain a ceramic sintered body.
■ 次に上記焼結体を真空加熱装置内に配置する。第１
図はこの真空加熱装置を示し、この装置１は、気密に形
成された加熱炉本体２に吸引ダクト３の一端を接続し、
該ダクト３の他端を真空ポンプ４に接続して構成されて
いる。そして、上記炉本体２内にステアリン酸マンガン
５を配置し、これの近傍に配置された載１台６上に上記
焼結体７を載置する。(2) Next, the sintered body is placed in a vacuum heating device. 1st
The figure shows this vacuum heating device, and this device 1 has one end of a suction duct 3 connected to a heating furnace body 2 formed airtight.
The other end of the duct 3 is connected to a vacuum pump 4. Then, the manganese stearate 5 is placed in the furnace body 2, and the sintered body 7 is placed on a pedestal 6 placed near the manganese stearate 5.
■ 次に上記炉本体２内を３００℃に昇温コントロール
し、上記マンガン５を気化させる。この雰囲気中にて焼
結体７を５時間保持し、この後、真空ポンプ４によりＱ
、３ｔｏｒｒまで真空排気し、この状態で１時間保持す
る。この後、大気中で１１００℃に昇温加熱し、１時間
保持する。(2) Next, the temperature inside the furnace body 2 is controlled to be raised to 300° C., and the manganese 5 is vaporized. The sintered body 7 is held in this atmosphere for 5 hours, and then the vacuum pump 4 is used to
, evacuate to 3 torr and hold in this state for 1 hour. Thereafter, the temperature was raised to 1100° C. in the atmosphere and held for 1 hour.
■ しかる後、上記焼結体の両主面にＩｎ−Ｇａ合金ペ
ーストを塗布した後、焼き付けて電極を形成する。これ
により、本実施例の半導体磁器が製造される。(2) Thereafter, an In--Ga alloy paste is applied to both main surfaces of the sintered body and baked to form electrodes. In this way, the semiconductor ceramic of this example is manufactured.
このように本実施例の製造方法によれば、上述の■工程
で得られた焼結体を、マンガンを充満した気体雰囲気中
に保持した後、真空排気し、しかる後所定温度に昇温加
熱処理したので、上記マンガンが焼結体の内部まで確実
に浸透して各粒子の粒界部分に吸着し、該粒界部分にの
み拡散できる。According to the manufacturing method of this example, the sintered body obtained in step (1) above is held in a gas atmosphere filled with manganese, evacuated, and then heated to a predetermined temperature. Because of the treatment, the manganese reliably penetrates into the interior of the sintered body, adsorbs to the grain boundary portions of each particle, and can diffuse only to the grain boundary portions.
その結果、従来公報のように焼結体の内部と表面部との
濃度差を解消でき、ひいては抵抗温度係数を向上させな
がら、室温領域における比抵抗をさらに小さくでき、大
電流化や素子の小型化に貢献できる。As a result, it is possible to eliminate the concentration difference between the inside and the surface of the sintered body, as previously reported, and further reduce the specific resistance in the room temperature region while improving the temperature coefficient of resistance. can contribute to the development of
次に本実施例の効果を確認するために行った実験につい
て説明する。Next, an experiment conducted to confirm the effects of this example will be explained.
この実験は、本実施例の■工程により作成された多数の
焼結体を準備し、上記■工程における真空排気時の温度
を１００〜４００℃の範囲で変化させてＭｎの添加量を
変化させ、これにより得られた各試料の室温抵抗値と、
抵抗温度係数を測定した。In this experiment, a large number of sintered bodies prepared in step (1) of this example were prepared, and the amount of Mn added was varied by changing the temperature during evacuation in the step (1) in the range of 100 to 400°C. , the room temperature resistance value of each sample obtained by this,
The temperature coefficient of resistance was measured.
なお、この抵抗温度係数は、次式により求めた（ ２．
３０３Ｘ １ｏｇ（Ｒ２／Ｒ１） ／（Ｔ２−ＴＩ）
） Ｘ１００（％／１）ここで、Ｒ２は２５℃における
抵抗の１００倍の抵抗値、Ｒ１は２５℃における抵抗の
１０倍の抵抗値であり、またＴ２は抵抗値がＲ２となる
温度、Ｔ１は抵抗値がＲ１となる温度である。The temperature coefficient of resistance was determined using the following formula (2.
303X 1og(R2/R1)/(T2-TI)
) is the temperature at which the resistance value becomes R1.
また、比較するためにＭｎをセラミクス原料に混合し、
これを一体焼結してなる従来試料についても同様の測定
を行った。In addition, for comparison, Mn was mixed into ceramic raw materials,
Similar measurements were also performed on a conventional sample made by integrally sintering this.
第２図及び第３図は実験結果を示す特性図であり、図中
、曲線Ａ（実線）は本実施例試料、曲線Ｂ（破線）は従
来試料を示す。FIGS. 2 and 3 are characteristic diagrams showing the experimental results, in which curve A (solid line) shows the sample of this example, and curve B (broken line) shows the conventional sample.
第２図は温度と比抵抗値との関係を示す。同図からも明
らかなように、室温領域（０〜１００℃）における比抵
抗値は従来試料Ｂが約３５〜４０Ω−ｃｌであるのに対
して、本実施例試料Ａは約２５〜３３Ω−０１と小さく
なっている。また、本実施例試料Ａは従来試料Ｂに比べ
て比抵抗の上昇率も急峻であり、特性が向上しているこ
とがわかる。FIG. 2 shows the relationship between temperature and specific resistance value. As is clear from the figure, the specific resistance value in the room temperature range (0 to 100°C) is about 35 to 40 Ω-cl for conventional sample B, while the specific resistance value of sample A of this example is about 25 to 33 Ω-cl. 01, which is small. Moreover, the rate of increase in specific resistance of sample A of this example is steeper than that of conventional sample B, indicating that the characteristics are improved.
第３図は室温抵抗値と抵抗温度係数との関係を示す。同
図からも明らかなように、室温抵抗値に対する抵抗温度
係数は従来試料Ｂに比べて本実施例試料Ａが全体的に約
３０％向上しており、低抵抗値で高い抵抗温度係数が得
られていることがわかる。FIG. 3 shows the relationship between room temperature resistance value and temperature coefficient of resistance. As is clear from the figure, the temperature coefficient of resistance with respect to the room temperature resistance value is improved by about 30% overall for sample A of this example compared to conventional sample B, and a high temperature coefficient of resistance can be obtained at a low resistance value. I can see that it is being done.
以上のように本発明に係る正の抵抗温度特性を有する半
導体磁器の製造方法によれば、セラミクス焼結体を、Ｍ
ｎ＋ Ｃｒ、Ｆｅ、Ｃｕを１種以上含む気体雰囲気中
に保持した後、脱気、加熱処理したので、焼結体の内部
まで気体が確実に侵入し、金属を粒子の粒界部分に拡散
でき、その結果高い抵抗温度係数を得ながら室温領域に
おける比抵抗をさらに小さくできる効果があり、素子の
小型化。As described above, according to the method for manufacturing semiconductor porcelain having positive resistance-temperature characteristics according to the present invention, the ceramic sintered body is
Since the sintered body was held in a gaseous atmosphere containing one or more of n+ Cr, Fe, and Cu, and then degassed and heat-treated, the gas could surely penetrate into the interior of the sintered body, and the metal could be diffused into the grain boundaries of the particles. As a result, the resistivity in the room temperature region can be further reduced while obtaining a high temperature coefficient of resistance, resulting in smaller devices.
大電流化に貢献できる効果がある。This has the effect of contributing to larger currents.
第１図は本発明の一実施例による半導体磁器の製造方法
を説明するための真空加熱装置を示す模式図、第２図及
び第３図はそれぞれ本実施例の効果を示す特性図である
。
図において、１は真空加熱装置（脱気、加熱手段）、５
はステアリン酸マンガン、７はセラミクス焼結体である
。
特許出願人 株式会社 村田製作所代理人 弁
理士 下布 努
第
図
第
図
温度（０Ｃ）
第３図
！蓄底坑（Ω・（ｍ）FIG. 1 is a schematic diagram showing a vacuum heating apparatus for explaining a method for manufacturing semiconductor porcelain according to an embodiment of the present invention, and FIGS. 2 and 3 are characteristic diagrams showing the effects of this embodiment, respectively. In the figure, 1 is a vacuum heating device (deaeration, heating means), 5
7 is manganese stearate, and 7 is a ceramic sintered body. Patent applicant Murata Manufacturing Co., Ltd. Representative Patent attorney Tsutomu Shimofu Diagram Diagram Temperature (0C) Diagram 3! Bottom pit (Ω・(m)
Claims (1)
Ｍｎ，Ｃｒ，Ｆｅ，Ｃｕの何れか１種以上の元素を含む
気体を吸着させた後、脱気，加熱処理を施すことを特徴
とする正の抵抗温度特性を有する半導体磁器の製造方法
。(1) A ceramic sintered body with positive resistance temperature characteristics,
A method for producing semiconductor porcelain having positive resistance-temperature characteristics, which comprises adsorbing a gas containing one or more elements of Mn, Cr, Fe, and Cu, followed by degassing and heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12581990A JPH0424901A (en) | 1990-05-15 | 1990-05-15 | Manufacture of semiconductor ceramic having positive temperature coefficient resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12581990A JPH0424901A (en) | 1990-05-15 | 1990-05-15 | Manufacture of semiconductor ceramic having positive temperature coefficient resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0424901A true JPH0424901A (en) | 1992-01-28 |
Family
ID=14919726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12581990A Pending JPH0424901A (en) | 1990-05-15 | 1990-05-15 | Manufacture of semiconductor ceramic having positive temperature coefficient resistance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0424901A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150918A (en) * | 1995-05-03 | 2000-11-21 | Bc Components Holdings B.V. | Degaussing unit comprising one or two thermistors |
-
1990
- 1990-05-15 JP JP12581990A patent/JPH0424901A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150918A (en) * | 1995-05-03 | 2000-11-21 | Bc Components Holdings B.V. | Degaussing unit comprising one or two thermistors |
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