JPH04251202A - single crystal optical fiber - Google Patents
single crystal optical fiberInfo
- Publication number
- JPH04251202A JPH04251202A JP2275448A JP27544890A JPH04251202A JP H04251202 A JPH04251202 A JP H04251202A JP 2275448 A JP2275448 A JP 2275448A JP 27544890 A JP27544890 A JP 27544890A JP H04251202 A JPH04251202 A JP H04251202A
- Authority
- JP
- Japan
- Prior art keywords
- optical fiber
- single crystal
- crystal optical
- core
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
- Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はレーザー発振、光増幅、非線形光学効果に応用
可能な単結晶光ファイバーに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a single crystal optical fiber that can be applied to laser oscillation, optical amplification, and nonlinear optical effects.
近年光ファイバーに単結晶を用いることが提案されてい
る。この単結晶光ファイバーの利点は単結晶が有するレ
ーザー発振、光増幅、非線形光学効果等の能力をそのま
ま光ファイバーに利用でき、光を全てファイバー状で扱
える点にある。しかしながら単結晶を単にファイバー化
しただけでは光損失が大きく、実用的でない。この点を
改良するため単結晶光ファイバーをコア・クラッド構造
とすることが提案された（特開平１−２５７８０２号）
。この構造はコア部を発光性元素を添加した単結晶とし
、クラッド部を発光性元素を含まないか、またはその含
有量をコア部より少くした同一の単結晶で構成し、コア
部とクラッド部の屈折率に差を持たせて光を効率良くフ
ァイバー内に閉じ込めるというものである。In recent years, it has been proposed to use single crystals in optical fibers. The advantage of this single-crystal optical fiber is that the capabilities of a single crystal, such as laser oscillation, optical amplification, and nonlinear optical effects, can be used as is in the optical fiber, and all light can be handled in the form of a fiber. However, simply converting a single crystal into a fiber causes large optical loss and is not practical. In order to improve this point, it was proposed to use a core-clad structure for single-crystal optical fibers (Japanese Patent Application Laid-open No. 1-257802).
. In this structure, the core is made of a single crystal doped with a luminescent element, and the cladding is made of the same single crystal that does not contain the luminescent element or has a lower content than the core. The idea is to create a difference in the refractive index of the fibers to efficiently confine light within the fiber.
ところが上記構造の場合、コア部とクラッド部の単結晶
は同一の材料であり、屈折率は発光性元素の添加量で調
節するとしてもその変化量はわずかであり、光損失の低
減に自ずと限界がある。又この構造は発光性元素を添加
しない単結晶には通用し得ない。However, in the case of the above structure, the single crystals in the core and cladding parts are made of the same material, and even if the refractive index is adjusted by the amount of the luminescent element added, the amount of change is small, and there is a natural limit to reducing optical loss. There is. Moreover, this structure cannot be applied to a single crystal without adding a luminescent element.
本発明の目的は光損失をより少くし、発光性元素を添加
しない単結晶もコア部に用い得るようにした構造の単結
晶光ファイバーを提供することにある。An object of the present invention is to provide a single-crystal optical fiber having a structure that further reduces optical loss and allows the use of a single crystal to which no luminescent element is added for the core portion.
上記目的を達成するため本発明の単結晶光ファイバーは
、コア部としてＹ３Ａｌ５Ｏ１２、Ｇｄ３Ｇａ５Ｏ１２
Ｇｄ３Ｓｃ２Ａｌ３Ｏ１２、Ａｌ２Ｏ３又はＬｉＹＦ４
にＮｄ、Ｃｒ、Ｈｏ、Ｔｉ、Ｅｒ、Ｌｕ、Ｔｍ、Ｃｅ、
Ｐｒ、Ｄｙ及びＴｂから選ばれる少くとも１種が添加さ
れたものか、ＬｉＮｂＯ３、ＬｉＴａＯ３ＢａＢ２Ｏ４
、ＫＴｉＯＰＯ４又はこれらにＭｇ又はＴｉが添加され
たものを用い、該コア部を囲むクラッド部がＭｇＦ２、
ＴｈＦ４、ＳｉＯ２、ＬａＦ３、ＢａＦ２、ＣａＦ２、
ＬｉＦ、Ｎａ３ＡｌＦ６又はＮａＦを用いた点に特徴が
ある。In order to achieve the above object, the single crystal optical fiber of the present invention has Y3Al5O12 and Gd3Ga5O12 as the core part.
Gd3Sc2Al3O12, Al2O3 or LiYF4
Nd, Cr, Ho, Ti, Er, Lu, Tm, Ce,
At least one selected from Pr, Dy and Tb is added, or LiNbO3, LiTaO3BaB2O4
, KTiOPO4 or these to which Mg or Ti is added, and the cladding surrounding the core is MgF2,
ThF4, SiO2, LaF3, BaF2, CaF2,
The feature is that LiF, Na3AlF6 or NaF is used.
クラッド部に用いるＭｇＦ２、ＴｈＦ４、ＳｉＯ２、Ｌ
ａＦ３、ＢａＦ２、ＣａＦ２、ＬｉＦ、Ｎａ３ＡｌＦ６
及びＮａＦはコア部の材料に比べて屈折率が充分小さく
、光損失は殆んど問題にならない。このため高効率のレ
ーザー発振、光増幅、非線形光学効果を得ることができ
る。MgF2, ThF4, SiO2, L used for cladding part
aF3, BaF2, CaF2, LiF, Na3AlF6
The refractive index of NaF is sufficiently lower than that of the material of the core, so that optical loss hardly becomes a problem. Therefore, highly efficient laser oscillation, optical amplification, and nonlinear optical effects can be obtained.
本発明の単結晶光ファイバーは、結晶融液から引上げた
、又は単結晶母材より伸線した、単結晶線をコア部とし
て、そのコア部を囲むようにＭｇＦ２、ＴｈＦ４、Ｓｉ
Ｏ２、ＬａＦ３、ＢａＦ２、ＬｉＦ、Ｎａ３ＡｌＦ６又
はＮａＦを蒸着法、イオンブレーティング法、スパッタ
リング法等で膜作製を行うことにより製造することがで
きる。The single-crystal optical fiber of the present invention has a single-crystal wire pulled from a crystal melt or drawn from a single-crystal base material as a core part, and MgF2, ThF4, Si
It can be manufactured by forming a film using O2, LaF3, BaF2, LiF, Na3AlF6, or NaF by a vapor deposition method, an ion blating method, a sputtering method, or the like.
Ｎｄを１．１原子％含有するＹ３Ａｌ５Ｏ１２の線の外
周に真空蒸着法によりＳｉＯ２の膜を形成し、光ファイ
バーとした。この光ファイバーの両端を研磨し、ＭｇＦ
２を蒸着して反射防止膜とし、光増幅を行ったところ、
波長１．０６μｍの光増幅が観測された。A SiO2 film was formed on the outer periphery of a Y3Al5O12 wire containing 1.1 at% of Nd by vacuum evaporation to obtain an optical fiber. Both ends of this optical fiber were polished and MgF
2 was vapor-deposited to form an anti-reflection film and optical amplification was performed.
Optical amplification at a wavelength of 1.06 μm was observed.
光源には半導体レーザー励起のＮｕｉＹＡＧレーザーを
用いた。A NuiYAG laser excited by a semiconductor laser was used as a light source.
本発明によりレーザー発振、光増幅、高調波発生などの
各種非線形光学効果を有する単結晶光ファイバーの実用
化に一歩前進したと言える。It can be said that the present invention has taken a step forward toward the practical use of single-crystal optical fibers that have various nonlinear optical effects such as laser oscillation, optical amplification, and harmonic generation.
特許出願人 住友金属鉱山株式会社Patent applicant: Sumitomo Metal Mining Co., Ltd.
Claims (2)
Ｇｄ３Ｓｃ２Ａｌ３Ｏ１２、Ａｌ２Ｏ３又はＬｉＹＦ４
にＮｄ、Ｃｒ、Ｈｏ、Ｔｉ、Ｅｒ、Ｌｕ、Ｔｍ、Ｃｅ、
Ｐｒ、Ｄｙ及びＴｂから選ばれる少くとも１種が添加さ
れたコア部を有し、該コア部を囲むクラッド部がＭｇＦ
２、ＴｈＦ４、ＳｉＯ２、ＬａＦ３、ＢａＦ２、ＣａＦ
２、ＬｉＦ、Ｎａ３ＡｌＦ６又はＮａＦであることを特
徴とする単結晶光ファイバー。Claim 1: Y3Al5O12, Gd3Ga5O12,
Gd3Sc2Al3O12, Al2O3 or LiYF4
Nd, Cr, Ho, Ti, Er, Lu, Tm, Ce,
It has a core portion doped with at least one selected from Pr, Dy, and Tb, and a cladding portion surrounding the core portion is MgF.
2, ThF4, SiO2, LaF3, BaF2, CaF
2. A single crystal optical fiber characterized by being made of LiF, Na3AlF6 or NaF.
４、ＫＴｉＯＰＯ４又はこれらにＭｇ又はＴｉが添加さ
れたコア部を有し、該コア部を囲むクラッド部がＭｇＦ
２、ＴｈＦ４、ＳｉＯ２、ＬａＦ３、ＢａＦ２、ＣａＦ
２、ＬｉＦ、Ｎａ３ＡｌＦ６又はＮａＦであることを特
徴とする単結晶光ファイバー。Claim 2: LiNbO3, LiTaO3, BaB2O
4. It has a core part of KTiOPO4 or these to which Mg or Ti is added, and the cladding part surrounding the core part is made of MgF.
2, ThF4, SiO2, LaF3, BaF2, CaF
2. A single crystal optical fiber characterized by being made of LiF, Na3AlF6 or NaF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2275448A JPH04251202A (en) | 1990-10-16 | 1990-10-16 | single crystal optical fiber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2275448A JPH04251202A (en) | 1990-10-16 | 1990-10-16 | single crystal optical fiber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04251202A true JPH04251202A (en) | 1992-09-07 |
Family
ID=17555671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2275448A Pending JPH04251202A (en) | 1990-10-16 | 1990-10-16 | single crystal optical fiber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04251202A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671642A1 (en) * | 1994-02-14 | 1995-09-13 | Eastman Kodak Company | An optical waveguide epitaxially grown on semiconductors for upconversion |
| GB2290150A (en) * | 1994-04-22 | 1995-12-13 | Univ Southampton | Doped optical waveguide amplifier |
| US6233385B1 (en) | 1998-01-30 | 2001-05-15 | Nec Corporation | Light limiter |
| EP1777281A3 (en) * | 2005-10-24 | 2007-10-03 | Fujifilm Corporation | Inorganic compound, composition and molded body containing the same, light emitting device, and solid laser device |
| CN103194797A (en) * | 2013-04-16 | 2013-07-10 | 宁波大学 | A Tm3+/Dy3+ doped LiYF4 single crystal for white light LED and its preparation method |
| JP2016207751A (en) * | 2015-04-17 | 2016-12-08 | 日本電信電話株式会社 | Yttrium aluminum garnet single crystal fiber waveguide and laser |
-
1990
- 1990-10-16 JP JP2275448A patent/JPH04251202A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671642A1 (en) * | 1994-02-14 | 1995-09-13 | Eastman Kodak Company | An optical waveguide epitaxially grown on semiconductors for upconversion |
| GB2290150A (en) * | 1994-04-22 | 1995-12-13 | Univ Southampton | Doped optical waveguide amplifier |
| GB2290150B (en) * | 1994-04-22 | 1998-08-26 | Univ Southampton | Doped optical waveguide amplifier |
| US6233385B1 (en) | 1998-01-30 | 2001-05-15 | Nec Corporation | Light limiter |
| US6539153B2 (en) | 1998-01-30 | 2003-03-25 | Nec Corporation | Light limiter |
| EP1777281A3 (en) * | 2005-10-24 | 2007-10-03 | Fujifilm Corporation | Inorganic compound, composition and molded body containing the same, light emitting device, and solid laser device |
| CN103194797A (en) * | 2013-04-16 | 2013-07-10 | 宁波大学 | A Tm3+/Dy3+ doped LiYF4 single crystal for white light LED and its preparation method |
| CN103194797B (en) * | 2013-04-16 | 2015-09-16 | 宁波大学 | A kind of Tm for white light LEDs 3+/ Dy 3+li doped YF 4single crystal and preparation method thereof |
| JP2016207751A (en) * | 2015-04-17 | 2016-12-08 | 日本電信電話株式会社 | Yttrium aluminum garnet single crystal fiber waveguide and laser |
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