JPH0425717B2 - - Google Patents
Info
- Publication number
- JPH0425717B2 JPH0425717B2 JP57096589A JP9658982A JPH0425717B2 JP H0425717 B2 JPH0425717 B2 JP H0425717B2 JP 57096589 A JP57096589 A JP 57096589A JP 9658982 A JP9658982 A JP 9658982A JP H0425717 B2 JPH0425717 B2 JP H0425717B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- receiving element
- optical coupling
- receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57096589A JPS58213482A (ja) | 1982-06-04 | 1982-06-04 | 光結合装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57096589A JPS58213482A (ja) | 1982-06-04 | 1982-06-04 | 光結合装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58213482A JPS58213482A (ja) | 1983-12-12 |
| JPH0425717B2 true JPH0425717B2 (mo) | 1992-05-01 |
Family
ID=14169103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57096589A Granted JPS58213482A (ja) | 1982-06-04 | 1982-06-04 | 光結合装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58213482A (mo) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5104823A (en) * | 1988-03-31 | 1992-04-14 | Northern Telecom Limited | Monolithic integration of optoelectronic and electronic devices |
| US6734451B2 (en) | 1993-11-02 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
| DE69418143T2 (de) | 1993-11-02 | 1999-08-26 | Matsushita Electric Industrial Co. | Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50150389A (mo) * | 1974-05-22 | 1975-12-02 | ||
| JPS5249787A (en) * | 1975-10-17 | 1977-04-21 | Matsushita Electric Ind Co Ltd | Semiconductor light coupling device |
-
1982
- 1982-06-04 JP JP57096589A patent/JPS58213482A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58213482A (ja) | 1983-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1150811A (en) | Phase-locked semiconductor laser device | |
| JP4120184B2 (ja) | 実装用微小構造体および光伝送装置 | |
| US6300650B1 (en) | Optical semiconductor device having a multilayer reflection structure | |
| US6959025B2 (en) | Surface-emitting laser diode having reduced device resistance and capable of performing high output operation, surface-emitting laser diode array, electrophotographic system, surface-emitting laser diode module, optical telecommunication system, optical interconnection system using the surface-emitting laser diode, and method of fabricating the surface-emitting laser diode | |
| US5903586A (en) | Long wavelength vertical cavity surface emitting laser | |
| JP2817703B2 (ja) | 光半導体装置 | |
| EP0366472B1 (en) | Semiconductor laser apparatus | |
| GB2346478A (en) | Optical emission device | |
| EP0423772A2 (en) | Semiconductor light emitting element | |
| JP3058077B2 (ja) | 半導体受発光装置 | |
| CN114976870B (zh) | 一种层叠式双波长集成半导体激光器及其制备方法 | |
| JP2628801B2 (ja) | 半導体レーザ構造体 | |
| JPH02155278A (ja) | 光機能素子 | |
| US5852624A (en) | Semiconductor laser element, method of manufacturing semiconductor laser element, and laser diode module | |
| JPH05251824A (ja) | 半導体レーザの製造方法 | |
| JPH0740619B2 (ja) | 半導体レ−ザ装置 | |
| US20060126695A1 (en) | Optical element, optical module, and optical transmission device | |
| JPH0425717B2 (mo) | ||
| JPH08340132A (ja) | 面発光ダイオード | |
| KR101237284B1 (ko) | 파장 가변 필터의 제작 방법 | |
| JPH07335976A (ja) | 受光素子付き面発光レーザ装置 | |
| KR20160022101A (ko) | 투과형 광 셔터 및 투과형 광 셔터의 제조 방법 | |
| JPS62140488A (ja) | 半導体レ−ザ装置 | |
| JPH06132563A (ja) | 半導体発光素子 | |
| JPH0677531A (ja) | 半導体発光素子及びその製造方法 |