JPH04259727A - Impregnated-type cathode - Google Patents
Impregnated-type cathodeInfo
- Publication number
- JPH04259727A JPH04259727A JP3019651A JP1965191A JPH04259727A JP H04259727 A JPH04259727 A JP H04259727A JP 3019651 A JP3019651 A JP 3019651A JP 1965191 A JP1965191 A JP 1965191A JP H04259727 A JPH04259727 A JP H04259727A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- impregnated
- film
- electron
- osmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008188 pellet Substances 0.000 claims abstract description 9
- 229910052762 osmium Inorganic materials 0.000 claims description 8
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 abstract description 11
- 239000010937 tungsten Substances 0.000 abstract description 11
- 229910000929 Ru alloy Inorganic materials 0.000 abstract description 7
- GIDFDWJDIHKDMB-UHFFFAOYSA-N osmium ruthenium Chemical compound [Ru].[Os] GIDFDWJDIHKDMB-UHFFFAOYSA-N 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 19
- 239000010953 base metal Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は含浸型陰極に関し、特に
、電子管に用いられる高電流密度の含浸型陰極に関する
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an impregnated cathode, and more particularly to a high current density impregnated cathode used in an electron tube.
【０００２】0002
【従来の技術】高電流密度陰極として使用される従来の
含浸型陰極は、タングステン（ｗ）の耐熱性の多孔質性
の基体金属にバリウム−カルシウム−アルミネート化合
物の電子放射材を含浸させたものに、さらに、電子放射
特性向上のため、陰極表面に、オスミウム（Ｏｓ），ル
テニウム（Ｒｕ）の一種、あるいは、これ等の合金薄膜
を被着させたもので、一般に、Ｍタイプと称されている
。この陰極表面に被着させる薄膜の厚さは、約５，００
０オングストロームとするのが一般的であった。[Prior Art] A conventional impregnated cathode used as a high current density cathode consists of a heat-resistant porous base metal of tungsten (W) impregnated with an electron emitting material of a barium-calcium-aluminate compound. Furthermore, in order to improve electron emission characteristics, a thin film of osmium (Os), ruthenium (Ru), or an alloy of these is coated on the cathode surface, and is generally called M type. ing. The thickness of the thin film deposited on the surface of this cathode is approximately 5,000 mm.
It was common to set the thickness to 0 angstrom.
【０００３】この含浸型陰極の電子放射の経時特性は、
例えば、陰極の電流密度１Ａ／平方センチメートル，動
作温度１１００℃の条件で動作させた場合、初期の陰極
電流を１００％とすると２０，０００時間で約３％低下
していた。The electron emission characteristics of this impregnated cathode over time are as follows:
For example, when operating under the conditions of a cathode current density of 1 A/cm 2 and an operating temperature of 1100° C., the initial cathode current decreased by about 3% in 20,000 hours, assuming that it was 100%.
【０００４】一般に、動作温度における陰極電流値が１
０％低下するまでの期間を陰極の寿命と称しており、こ
の寿命が長い程良い陰極とされる。Generally, the cathode current value at the operating temperature is 1
The period until it decreases to 0% is called the life of the cathode, and the longer the life, the better the cathode.
【０００５】この含浸型陰極は、過去のＳタイプと称す
るオスミウム等の被膜を有しない含浸型陰極に比べ寿命
が長いという事でこれまで多くの電子管の陰極として使
用されて来ており、特に、長寿命を必要するものの代表
的なものとされている衛星搭載用の電子管に使用されて
いた。This impregnated cathode has been used as the cathode of many electron tubes because it has a longer lifespan than the past impregnated cathode called S type, which does not have a coating of osmium or the like. It was used in electron tubes mounted on satellites, which are considered to be representative of products that require long lifespans.
【０００６】[0006]
【発明が解決しようとする課題】現在、この衛星搭載用
電子管の傾向としては、これまで以上に陰極の電流密度
が高くなると共に、陰極の寿命もこれまでに比べより長
い１０万時間以上というのが一般的となって来ている。[Problems to be Solved by the Invention] Currently, the current trend in satellite-mounted electron tubes is that the current density of the cathode is higher than ever before, and the lifespan of the cathode is longer than ever before, at more than 100,000 hours. is becoming common.
【０００７】しかし、従来の含浸型陰極では、例えば、
陰極の電流密度４Ａ／平方センチメートル，動作温度１
１００℃の場合、推定寿命１０万時間以下となり、寿命
要求を満すのは困難であった。However, in the conventional impregnated cathode, for example,
Cathode current density 4A/cm2, operating temperature 1
In the case of 100°C, the estimated lifespan was less than 100,000 hours, making it difficult to meet the lifespan requirement.
【０００８】この対応策として、オスミウム（Ｏｓ），
ルテニウム（Ｒｕ）の１種又はこれ等の合金からなる被
着膜の膜厚を厚くする方法が考え出された。As a countermeasure to this problem, osmium (Os),
A method has been devised to increase the thickness of a deposited film made of one type of ruthenium (Ru) or an alloy thereof.
【０００９】これは、従来のタングステン基体金属の上
にオスミウムを被着させた含浸型陰極における電子放射
低下が、陰極表面のタングステン濃度と関係しているこ
とを考慮したもので、従来の一般的な被着膜の厚さ５，
０００オングストロームをより厚くさせることにより、
陰極表面のタングステン濃度の上昇を遅くさせるねらい
である。[0009] This is based on the fact that the decrease in electron emission in a conventional impregnated cathode in which osmium is deposited on a tungsten base metal is related to the tungsten concentration on the cathode surface. Thickness of the deposited film 5,
By making 000 angstroms thicker,
The aim is to slow down the increase in tungsten concentration on the cathode surface.
【００１０】この対応策によって多少寿命は長くなるも
のの被着膜が１２，０００オグストロームを越えると、
被着膜が基体金属のタングステン（ｗ）から剥れやすく
なるという問題点があった。この被着膜が剥れると、そ
の部分の電子放射特性は急激に低下するという問題点が
ある。[0010] Although this measure lengthens the life a little, if the deposited film exceeds 12,000 angstroms,
There was a problem in that the deposited film easily peeled off from the base metal tungsten (w). When this deposited film peels off, there is a problem in that the electron emission characteristics of that part drop sharply.
【００１１】本発明の目的は、被着膜の剥れがなく、長
寿命の含浸型陰極を提供することにある。[0011] An object of the present invention is to provide an impregnated cathode with a long life and without peeling of the deposited film.
【００１２】0012
【課題を解決するための手段】本発明は、高融点金属か
らなる多孔質性の基体に電子放射物質を含浸させたペレ
ットを有する含浸型陰極において、電子放射面となる前
記ペレットの表面にタンタル膜を形成し、さらに、該タ
ンタル膜上にオスミウムと、ルテニウムと、前記オスミ
ウムと前記ルテニウムのうちの少くともいずれか１種を
主体とする合金とのうちのいずれか１種の被膜を付着さ
せている。[Means for Solving the Problems] The present invention provides an impregnated cathode having pellets in which a porous base made of a high-melting point metal is impregnated with an electron-emitting substance, in which the surface of the pellet, which becomes the electron-emitting surface, is coated with tantalum. forming a film, and further adhering a film of any one of osmium, ruthenium, and an alloy containing at least one of the osmium and the ruthenium as a main component on the tantalum film. ing.
【００１３】[0013]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments Next, embodiments of the present invention will be described with reference to the drawings.
【００１４】図１は本発明の一実施例の断面図である。FIG. 1 is a sectional view of one embodiment of the present invention.
【００１５】図１に示す様に、ペレット１は、空孔率１
８〜２０％の多孔質のタングステン金属基体２と、空孔
３とから形成されており、空孔３の中にはバリウム，カ
ルシウム，アルミネートの電子放射物質が含浸されてい
る。As shown in FIG. 1, the pellet 1 has a porosity of 1
It is formed of a 8-20% porous tungsten metal base 2 and pores 3, and the pores 3 are impregnated with an electron emitting material of barium, calcium, and aluminate.
【００１６】このペレット１の上には、陰極表面のタン
グステン濃度の上昇を押える為の拡散遮蔽膜として、タ
ンタル（Ｔａ）膜４が膜厚約３，０００オングストロー
ムスパッタによって形成されている。A tantalum (Ta) film 4 having a thickness of about 3,000 angstroms is formed on the pellet 1 by sputtering as a diffusion shielding film for suppressing an increase in the tungsten concentration on the surface of the cathode.
【００１７】さらに、その上に電子放射特性をより良く
する為の７５％オスミウム−２５％ルテニウム合金膜５
が膜厚約５，０００オングストロームスパッタによって
形成されている。Furthermore, a 75% osmium-25% ruthenium alloy film 5 is further applied thereon to improve electron emission characteristics.
is formed by sputtering to a thickness of approximately 5,000 angstroms.
【００１８】また、図１に示す様に、ペレット１は、モ
リブデンの金属円筒６にろう接されており、この金属円
筒６の内部には加熱源のヒータ７がアルミナ８で埋設さ
れている。Further, as shown in FIG. 1, the pellet 1 is soldered to a metal cylinder 6 made of molybdenum, and a heater 7 as a heating source is buried inside the metal cylinder 6 using alumina 8.
【００１９】図２は図１の陰極と従来の陰極の陰極電流
値の経時変化を示す特性図である。FIG. 2 is a characteristic diagram showing changes over time in cathode current values of the cathode shown in FIG. 1 and a conventional cathode.
【００２０】従来の含浸型陰極と本実施例の含浸型陰極
を２極管に組込み、陰極表面温度を通常使用温度より５
０℃高い１，１５０℃になるようにヒータを加熱させる
と共に、陰極の電流密度５Ａ／平方センチメートルを取
り出す為の陽極電圧を印加し、陰極の電子放射特性の経
時変化を調査した。[0020] The conventional impregnated cathode and the impregnated cathode of this example were incorporated into a diode tube, and the cathode surface temperature was lowered by 55% from the normal operating temperature.
A heater was heated to 1,150°C, which is 0°C higher, and an anode voltage was applied to obtain a current density of 5 A/cm2 at the cathode, and changes over time in the electron emission characteristics of the cathode were investigated.
【００２１】その結果を図２に示す。The results are shown in FIG.
【００２２】縦軸は、陰極の初期の電流密度５Ａ／平方
センチメートルを１００とした時の指数を示す。Ａは従
来の含浸型陰極，Ｂは実施例の含浸型陰極である。The vertical axis represents an index when the initial current density of the cathode, 5 A/cm 2 , is taken as 100. A is a conventional impregnated cathode, and B is an impregnated cathode of the embodiment.
【００２３】図２から明らかなように、本実施例の含浸
型陰極の特性Ｂは、従来の含浸型陰極の特性Ａよりも優
れていることが判る。As is clear from FIG. 2, the characteristic B of the impregnated cathode of this example is superior to the characteristic A of the conventional impregnated cathode.
【００２４】上述の結果、本実施例の含浸型陰極を使用
することにより、高電流密度，長寿命の電子管、すなわ
ち、衛星搭載用として適した電子管を得ることができる
。As a result of the above, by using the impregnated cathode of this embodiment, it is possible to obtain an electron tube with high current density and long life, that is, an electron tube suitable for being mounted on a satellite.
【００２５】尚、拡散遮蔽膜としてのタンタルの厚みは
少なくとも５００オングストローム以上有れば、従来の
含浸型陰極の経時特性よりは優れていることが、実施例
と同様な方法で確認できた。[0025] It was confirmed by the same method as in the Examples that if the thickness of tantalum as the diffusion shielding film is at least 500 angstroms or more, the aging characteristics are superior to those of the conventional impregnated cathode.
【００２６】[0026]
【発明の効果】以上説明したように本発明の含浸型陰極
によれば、電子放射面となるオスミウム−ルテニウム合
金膜とタングステン基体金属との中間に拡散遮蔽膜とし
てのタンタル膜を形成させる事により、オスミウム−ル
テニウム合金膜の電子放射面へのタングステンの拡散並
びにタンタルの拡散を少なくすることが出来る。[Effects of the Invention] As explained above, according to the impregnated cathode of the present invention, a tantalum film as a diffusion shielding film is formed between the osmium-ruthenium alloy film serving as the electron emitting surface and the tungsten base metal. , it is possible to reduce the diffusion of tungsten and tantalum to the electron emitting surface of the osmium-ruthenium alloy film.
【００２７】したがって、長時間に亘り、電子放射面の
オスミウム−ルテニウム合金のそれぞれの濃度が安定す
ることにより高い電子放射特性を安定して得ることがで
きる効果がある。[0027] Therefore, by stabilizing the respective concentrations of the osmium-ruthenium alloy on the electron emitting surface over a long period of time, it is possible to stably obtain high electron emission characteristics.
【図１】本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
【図２】図１の陰極と従来の陰極の陰極電流値の経時変
化を示す特性図である。FIG. 2 is a characteristic diagram showing changes over time in cathode current values of the cathode in FIG. 1 and a conventional cathode.
１ ペレット
２ タングステン金属基体
３ 空孔
４ タンタル膜
５ オスミウム−ルテニウム合金膜６ 金
属円筒
７ ヒータ
８ アルミナ1 Pellet 2 Tungsten metal base 3 Hole 4 Tantalum film 5 Osmium-ruthenium alloy film 6 Metal cylinder 7 Heater 8 Alumina
Claims (1)
電子放射物質を含浸させたペレットを有する含浸型陰極
において、電子放射面となる前記ペレットの表面にタン
タル膜を形成し、さらに、該タンタル膜上にオスミウム
と、ルテニウムと、前記オスミウムと前記ルテニウムの
うちの少くともいずれか１種を主体とする合金とのうち
のいずれか１種の被膜を付着させたことを特徴とする含
浸型陰極。1. An impregnated cathode comprising pellets in which a porous base made of a high-melting point metal is impregnated with an electron-emitting substance, in which a tantalum film is formed on the surface of the pellet, which becomes an electron-emitting surface; An impregnated type characterized in that a film of any one of osmium, ruthenium, and an alloy mainly containing at least one of the osmium and the ruthenium is adhered to the tantalum film. cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1965191A JP3225523B2 (en) | 1991-02-13 | 1991-02-13 | Impregnated cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1965191A JP3225523B2 (en) | 1991-02-13 | 1991-02-13 | Impregnated cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04259727A true JPH04259727A (en) | 1992-09-16 |
| JP3225523B2 JP3225523B2 (en) | 2001-11-05 |
Family
ID=12005151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1965191A Expired - Fee Related JP3225523B2 (en) | 1991-02-13 | 1991-02-13 | Impregnated cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3225523B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09500232A (en) * | 1994-03-15 | 1997-01-07 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Dispenser cathode and method of manufacturing dispenser cathode |
-
1991
- 1991-02-13 JP JP1965191A patent/JP3225523B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09500232A (en) * | 1994-03-15 | 1997-01-07 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Dispenser cathode and method of manufacturing dispenser cathode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3225523B2 (en) | 2001-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4675570A (en) | Tungsten-iridium impregnated cathode | |
| EP0391466A1 (en) | Cathode for an electric discharge tube | |
| JPH04259727A (en) | Impregnated-type cathode | |
| US4291252A (en) | Electron tube cathode | |
| US2830917A (en) | Cathode for electron discharge devices | |
| JPH0719530B2 (en) | Cathode ray tube | |
| KR100291903B1 (en) | Oxide cathode of cathode ray tube | |
| US2874077A (en) | Thermionic cathodes | |
| US6833659B2 (en) | Cathode ray tube comprising a cathode of a composite material | |
| US3016472A (en) | Dispenser cathode | |
| JPH0628967A (en) | Dispenser cathode | |
| JPH04248223A (en) | Impregnated cathode | |
| US5747921A (en) | Impregnation type cathode for a cathodic ray tube | |
| KR100247820B1 (en) | Cathode for electron tube | |
| US3348092A (en) | Electron discharge device having a barium dispensing anode structure | |
| JP3715790B2 (en) | Method for producing impregnated cathode for discharge tube | |
| JPH0552617B2 (en) | ||
| US2792273A (en) | Oxide coated nickel cathode and method of activation | |
| JPH06111711A (en) | Impregnated cathode | |
| JPS60138822A (en) | Impregnated cathode | |
| RU2034351C1 (en) | Dispensing cathode | |
| KR100259298B1 (en) | Impregnation-type cathode for crt | |
| US3099577A (en) | Method of manufacturing oxide cathodes and cathodes manufactured by such methods | |
| JPS6334832A (en) | Manufacturing method of impregnated cathode | |
| KR920004551B1 (en) | Dispensor cathode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010731 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070831 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080831 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080831 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090831 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090831 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100831 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |