JPH0426202B2 - - Google Patents
Info
- Publication number
- JPH0426202B2 JPH0426202B2 JP2671584A JP2671584A JPH0426202B2 JP H0426202 B2 JPH0426202 B2 JP H0426202B2 JP 2671584 A JP2671584 A JP 2671584A JP 2671584 A JP2671584 A JP 2671584A JP H0426202 B2 JPH0426202 B2 JP H0426202B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- molded body
- holes
- ceramic molded
- ceramic capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 26
- 239000003985 ceramic capacitor Substances 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229910002929 BaSnO3 Inorganic materials 0.000 description 1
- 229910004774 CaSnO3 Inorganic materials 0.000 description 1
- 229910002976 CaZrO3 Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は、複数個の貫通孔を有するセラミツク
成形体を用いることにより、小形大容量化が可能
となるセラミツクコンデンサに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic capacitor that can be made smaller and have a larger capacity by using a ceramic molded body having a plurality of through holes.
セラミツクコンデンサは高周波特性に優れ、小
型大容量で信頼性の高いコンデンサである。この
ためセラミツクコンデンサは多くの電子機器に使
用されているが、さらに小型大容量化をはかるた
めに、セラミツクの誘電率を高くすることが要求
されている。しかしセラミツク誘電体はその誘電
率を高くすると一般にその誘電率の温度変化率、
tanδは大きくなる。このため、他の方法として比
表面積を増大する方法が挙げられ、例えば誘電体
層を積層することによつて小型大容量化を達成し
ようとする積層セラミツクコンデンサが知られて
いる。上記構造とすることにより、比表面積がき
わめて大きくなるため小型でかつ大容量化が可能
となるのである。しかしながら、積層コンデンサ
はシート状セラミツクを積重ねるため、シート自
体の膜厚の管理が難かしく、かつそのための製造
設備が高価であること、更に電極を埋めこんで高
温度で焼結するため、コストが高くなるなどの問
題があつた。 Ceramic capacitors have excellent high frequency characteristics, are small in size, have large capacity, and are highly reliable. For this reason, ceramic capacitors are used in many electronic devices, but in order to further increase the size and capacity of capacitors, it is required that the dielectric constant of the ceramic be increased. However, when ceramic dielectric materials have a high dielectric constant, the temperature change rate of the dielectric constant generally increases.
tanδ increases. For this reason, another method is to increase the specific surface area. For example, a multilayer ceramic capacitor is known in which a small size and a large capacity are achieved by stacking dielectric layers. By adopting the above structure, the specific surface area becomes extremely large, making it possible to achieve a small size and a large capacity. However, since multilayer capacitors are made of stacked ceramic sheets, it is difficult to control the film thickness of the sheets themselves, and the manufacturing equipment for this is expensive. Furthermore, since the electrodes are embedded and sintered at high temperatures, they are expensive. There were problems such as high prices.
本発明は、積層によらずに比表面積を増大させ
る構造とすることにより、上記問題点を改善し、
小型大容量のセラミツクコンデンサを得ることを
目的としたものである。 The present invention improves the above problems by creating a structure that increases the specific surface area without relying on lamination.
The purpose is to obtain a small-sized, large-capacity ceramic capacitor.
すなわち、本発明のセラミツクコンデンサは、
セラミツク成形体に複数の貫通孔を設け、その貫
通孔内に内部電極を埋めこみ、セラミツク成形体
の表面に外部電極を設置して成る構造を有するも
のである。 That is, the ceramic capacitor of the present invention is
It has a structure in which a plurality of through holes are provided in a ceramic molded body, internal electrodes are embedded in the through holes, and external electrodes are installed on the surface of the ceramic molded body.
以下、本発明を実施例に添つて説明すると、第
1図および第2図に示すように、セラミツク成形
体1に複数個の貫通孔1Aを設け、その中心部に
絶縁部4を設置し、貫通孔1Aの上部および下部
に内部電極2を埋めこみ、内部電極2に連結する
外部電極3を、セラミツク成形体1の表面に設置
してセラミツクコンデンサとする。この時、絶縁
部4は、上部の内部電極と下部の内部電極とが無
接触の構造となつていればよく、空洞かあるいは
絶縁体、誘電体等が充填された構造となつてい
る。 Hereinafter, the present invention will be described with reference to examples. As shown in FIGS. 1 and 2, a plurality of through holes 1A are provided in a ceramic molded body 1, and an insulating part 4 is installed in the center of the through holes 1A. Internal electrodes 2 are embedded in the upper and lower parts of the through hole 1A, and external electrodes 3 connected to the internal electrodes 2 are placed on the surface of the ceramic molded body 1 to form a ceramic capacitor. At this time, the insulating section 4 only needs to have a structure in which the upper internal electrode and the lower internal electrode are not in contact with each other, and may be a hollow structure or a structure filled with an insulator, dielectric material, or the like.
上記構造とすることにより、比表面積が増加す
るため、小型大容量化が可能となるものである。 With the above structure, the specific surface area increases, so it is possible to make the device smaller and have a larger capacity.
本発明に用いられるセラミツクは、通常コンデ
ンサとして用いられているセラミツクであれば何
でもよく、例えばBaTiO3、SrTiO3、CaTiO3、
PbTiO3、CaSnO3、BaSnO3、BaZrO3、
CaZrO3、La2O3、Nb2O5、TiO2、MgO、Fe2O3、
等を主成分もしくは添加物として、必要に応じて
任意組合せたものが挙げられる。 The ceramic used in the present invention may be any ceramic commonly used as a capacitor, such as BaTiO 3 , SrTiO 3 , CaTiO 3 ,
PbTiO3 , CaSnO3 , BaSnO3 , BaZrO3 ,
CaZrO3 , La2O3 , Nb2O5 , TiO2 , MgO, Fe2O3 ,
etc. as main ingredients or as additives, optionally combined as necessary.
セラミツク成形体の形状としては、円柱状、円
盤状、角状等任意の形状が挙げられ、長さおよび
外径は使用に応じて任意設定することができる。 The shape of the ceramic molded body may be any shape such as a columnar shape, a disk shape, or a square shape, and the length and outer diameter can be arbitrarily set depending on the use.
セラミツク成形体中におけるそれぞれの貫通孔
の位置は任意であるが、例えば成形体中心部より
同心円状に位置するもの、格子状のもの、放射状
のもの、ハニカム状のものあるいはランダム形の
もの等が挙げられる。 The position of each through hole in the ceramic molded body is arbitrary, but for example, those located concentrically from the center of the molded body, those in a lattice shape, those in a radial shape, those in a honeycomb shape, or those in a random shape, etc. Can be mentioned.
貫通孔の穴形状および孔数は任意であるが、孔
数については、セラミツク成形体の外径、および
貫通孔の孔径から任意設定する必要がある。もち
ろん、孔数は多ければ多いほど、比表面積が増大
するため好ましい。 Although the shape and number of the through holes are arbitrary, the number of holes needs to be arbitrarily set based on the outer diameter of the ceramic molded body and the diameter of the through holes. Of course, the greater the number of pores, the greater the specific surface area, which is preferable.
貫通孔を作成する方法としては、複数の貫通孔
が得られる方法であれば、どのような方法を用い
てもよく、例えば円筒形の金型内に所定の径およ
び数の金属線をはり、セラミツク混練物を充填
し、プレスして乾燥、焼結したのち、焼成中ある
いは焼成後に金属線を溶解、溶融、引き抜き等に
より抜き取り、貫通孔を作成する方法、あるいは
ハニカムダイを用い、スクリユー押出しにてセラ
ミツクを押圧して貫通孔を作成する方法等が挙げ
られる。 Any method may be used to create the through holes as long as a plurality of through holes can be obtained.For example, metal wires of a predetermined diameter and number are placed in a cylindrical mold, After filling the ceramic kneaded material, pressing, drying, and sintering, the metal wire is extracted by melting, fusing, drawing, etc. during or after firing to create a through hole, or by screw extrusion using a honeycomb die. For example, a method may be used in which a through hole is created by pressing the ceramic.
なお、本発明のセラミツクコンデンサの他の実
施例として、第3図のように貫通孔1A内に内部
電極を設置する際、貫通孔1Aの下端もしくは上
端部には何も充填しないかあるいは絶縁物を充填
した上で、ほぼ半数の内部電極12がセラミツク
成形体1の上端の外部電極3に連結され、その他
の内部電極12は、下端の外部電極3に連結して
セラミツクコンデンサとする。この構造とするこ
とにより、比表面積が増大するため、小型大容量
化が可能となるのである。 In addition, as another embodiment of the ceramic capacitor of the present invention, when an internal electrode is installed in the through hole 1A as shown in FIG. Then, approximately half of the internal electrodes 12 are connected to the external electrode 3 at the upper end of the ceramic molded body 1, and the other internal electrodes 12 are connected to the external electrode 3 at the lower end to form a ceramic capacitor. This structure increases the specific surface area, making it possible to increase the size and capacity.
また、第4図のようにセラミツク成形体1の貫
通孔1A内に内部電極22を埋めこみ、その内部
電極22に連結する外部電極3をセラミツク成形
体1の端面に設け、またセラミツク成形体1の外
周に、対向する外部電極3を設置してセラミツク
コンデンサとすることもできる。 Further, as shown in FIG. 4, an internal electrode 22 is embedded in the through hole 1A of the ceramic molded body 1, and an external electrode 3 connected to the internal electrode 22 is provided on the end surface of the ceramic molded body 1. A ceramic capacitor can also be formed by disposing opposing external electrodes 3 on the outer periphery.
次に、本発明の製造法について簡単に述べると
原料としてBaTiO3、を主成分として用い、これ
に結合材としてポリビニルブチラール、可塑剤と
してフタル酸ジブチル、溶剤としてメチルエチル
ケトンを添加して、セラミツク混練物を作成し
た。ここで外径50μで50本の金属線がはられた円
筒形の金型内にセラミツク混練物を充填し、
3Ton/cm2の成形圧力でプレスしたのち、直径10
mm長さ8mmの円柱状成形物を作成し、100℃にて
24hr乾燥した。次に、50本の金属線が内包された
成形体を1300〜1400℃の大気中で焼成し、セラミ
ツクを焼結させると同時に金属を溶解除去し、孔
径45μで孔数50ヶの貫通孔を有するセラミツク成
形体が得られた。 Next, to briefly describe the manufacturing method of the present invention, BaTiO 3 is used as a raw material as a main component, polyvinyl butyral is used as a binder, dibutyl phthalate is used as a plasticizer, and methyl ethyl ketone is added as a solvent to form a ceramic kneaded product. It was created. Here, the ceramic mixture is filled into a cylindrical mold with an outer diameter of 50μ and 50 metal wires.
After pressing at a molding pressure of 3Ton/ cm2 , the diameter is 10
A cylindrical molded product with a length of 8 mm was created and heated at 100℃.
Dry for 24hr. Next, the molded body containing 50 metal wires is fired in the atmosphere at 1300 to 1400℃ to sinter the ceramic and simultaneously dissolve and remove the metal, forming 50 through holes with a diameter of 45μ. A ceramic molded body having the following properties was obtained.
次に、貫通孔内の中心部に絶縁体を充填したの
ち、内部電極として、上部および下部にAgペー
ストを充填し、それに連結する外部電極としてセ
ラミツク成形体の上面および下面にそれぞれAg
電極ペーストを塗布して、約800℃で焼き付け、
セラミツクコンデンサとした。 Next, after filling the center of the through hole with an insulator, the upper and lower parts are filled with Ag paste as internal electrodes, and the upper and lower surfaces of the ceramic molded body are filled with Ag paste as external electrodes connected to it.
Apply electrode paste and bake at approximately 800℃.
It was made into a ceramic capacitor.
以上のようにして得られた本発明のセラミツク
コンデンサは25℃、100KHzにおける誘電率が
3000以上で、tao〓が2.0%以下という性能を有する
ものであり、本発明の構造とすることにより、比
表面積がきわめて大きくなるため、小型でかつ大
容量化が容易に達成できるものである。さらに積
層コンデンサと比較して製造工程が簡単であるた
め、工程管理が容易となり、しかもコストも低減
でき、安定した性能が得られるなど種々の優れた
効果を有するものである。なお本発明は一般的な
セラミツクコンデンサについて述べたが、高周波
用コンデンサ、および半導体コンデンサ等にも応
用されることは勿論である。 The ceramic capacitor of the present invention obtained as described above has a dielectric constant at 25°C and 100KHz.
3000 or more and t ao 〓 of 2.0% or less, and by using the structure of the present invention, the specific surface area becomes extremely large, so it is possible to easily achieve a small size and a large capacity. . Furthermore, since the manufacturing process is simpler than that of multilayer capacitors, process control is easier, costs can be reduced, and stable performance can be obtained, among other excellent effects. Although the present invention has been described with respect to a general ceramic capacitor, it is of course applicable to high frequency capacitors, semiconductor capacitors, and the like.
第1図は、本発明のセラミツクコンデンサの縦
断面図、第2図は第1図のA−A断面図、第3図
および第4図はそれぞれ、本発明のセラミツクコ
ンデンサにおける他の実施例の縦断面図。
1……セラミツク成形体、1A……貫通孔、
2,12,22……内部電極、3……外部電極、
4……絶縁部。
FIG. 1 is a longitudinal sectional view of a ceramic capacitor of the present invention, FIG. 2 is a sectional view taken along line A-A in FIG. Longitudinal cross-sectional view. 1... Ceramic molded body, 1A... Through hole,
2, 12, 22...internal electrode, 3... external electrode,
4... Insulation section.
Claims (1)
れ、該貫通孔内に内部電極を埋め込み、セラミツ
ク成形体の表面に外部電極を設置して成るセラミ
ツクコンデンサ。1. A ceramic capacitor in which a plurality of through holes are provided in a ceramic molded body, internal electrodes are embedded in the through holes, and external electrodes are installed on the surface of the ceramic molded body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2671584A JPS60170921A (en) | 1984-02-15 | 1984-02-15 | Ceramic condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2671584A JPS60170921A (en) | 1984-02-15 | 1984-02-15 | Ceramic condenser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60170921A JPS60170921A (en) | 1985-09-04 |
| JPH0426202B2 true JPH0426202B2 (en) | 1992-05-06 |
Family
ID=12201045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2671584A Granted JPS60170921A (en) | 1984-02-15 | 1984-02-15 | Ceramic condenser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60170921A (en) |
-
1984
- 1984-02-15 JP JP2671584A patent/JPS60170921A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60170921A (en) | 1985-09-04 |
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