JPH0426792B2 - - Google Patents
Info
- Publication number
- JPH0426792B2 JPH0426792B2 JP61237781A JP23778186A JPH0426792B2 JP H0426792 B2 JPH0426792 B2 JP H0426792B2 JP 61237781 A JP61237781 A JP 61237781A JP 23778186 A JP23778186 A JP 23778186A JP H0426792 B2 JPH0426792 B2 JP H0426792B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- junction
- band
- bandgap
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
この発明は、電力効率を改善したイソタイプヘ
テロ接合光・電力変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an isotype heterojunction optical/power conversion device with improved power efficiency.
イソタイプヘテロ接合（ｎ−ｎまたはｐ−ｐヘ
テロ接合）を用いた光電変換素子として、従来、
ｎ形SnO2とｎ形Siのヘテロ接合から成る光電変
換素子が研究されてきた。この光電変換素子の開
放電圧と曲線因子は、報告によつて種々の値があ
り、同一の条件下で作成しても再現性を得るのは
困難であつた。 Conventionally, as a photoelectric conversion element using an isotype heterojunction (nn or pp heterojunction),
Photoelectric conversion elements consisting of a heterojunction of n-type SnO 2 and n-type Si have been studied. There are various reports regarding the open-circuit voltage and fill factor of this photoelectric conversion element, and it has been difficult to obtain reproducibility even if the elements are produced under the same conditions.
しかるに、開放電圧に主眼を置いた製造方法の
改良は、Siウエハの表面に意図的に薄いSiO2を
生成してからSnO2を成長させることによつて行
なうことができる。 However, improvements in the manufacturing method that focus on open circuit voltage can be achieved by intentionally forming a thin layer of SiO 2 on the surface of a Si wafer and then growing SnO 2 .
このSiO2の膜厚は、通常、数十℃以下の空気
中放置、または酸化性の酸処理によつてSiウエハ
表面に自然に生ずる膜厚よりも厚くなければ再現
性の点で問題がある。ただし上限もあり、トンネ
ル効果によつて電流が流れ得る程度の薄い値には
留めなければならない。 There is a problem with reproducibility unless the thickness of this SiO 2 film is thicker than that which naturally occurs on the Si wafer surface by leaving it in air at temperatures below several tens of degrees Celsius or by treating it with oxidizing acid. . However, there is an upper limit, and it must be kept at a value that is low enough to allow current to flow due to the tunnel effect.
しかし、こうした製造方法上からだけの対策で
は、出力を電力として得ようとした場合、曲線因
子がSiO2の厚膜の微妙な変化によつて大きく変
わるという欠点が生じた。 However, with these countermeasures taken only from the viewpoint of the manufacturing method, when trying to obtain output as electric power, the drawback arises that the fill factor varies greatly depending on subtle changes in the thick SiO 2 film.
そこで一方、バンド構造に着目した研究もなさ
れた。 On the other hand, research focusing on the band structure has also been conducted.
例えばこの種のイソタイプヘテロ接合を構成す
るにも、バンドギヤツプの広い第一の半導体を、
この第一の半導体と同一導電型であるがこれより
狭いバンドギヤツプを有し、かつ下記に述べるよ
うなエネルギレベル関係にある第二の半導体に接
合させ、バンドギヤツプの狭い第二の半導体表面
に空乏層または反転層を形成すると、比較的良好
な光電変換特性を得られることが分かつた。 For example, to construct this type of isotype heterojunction, the first semiconductor with a wide bandgap is
It is bonded to a second semiconductor that is of the same conductivity type as the first semiconductor but has a narrower bandgap and has an energy level relationship as described below, and a depletion layer is formed on the surface of the second semiconductor with a narrower bandgap. Alternatively, it has been found that relatively good photoelectric conversion characteristics can be obtained by forming an inversion layer.
これについては、例えば、雑誌：『電子材料』
vol.13、No.10、1974年10月発行の第63頁、図１等
に示されているが、本書においても改めて簡明に
示せば本願添付の第１図のようになり、接合にお
いて広いバンドギヤツプの第一の半導体の伝導
帯B3または充満帯（価電子帯）B1が、狭いバン
ドギヤツプの第二の半導体の禁制帯B4内のレ
ベルに位置するのである。 Regarding this, for example, magazine: "Electronic Materials"
Vol. 13, No. 10, October 1974 issue, page 63, Figure 1, etc., but in this book as well, if we simply show it again, it will be as shown in Figure 1 attached to this application, which shows that there is a wide range of joints. The conduction band B3 or the valence band B1 of the first semiconductor of the bandgap is located at a level within the forbidden band B4 of the second semiconductor of the narrow bandgap.
なお、こうした関係を満足する材料の組合せに
も種々あるが、中でも既述したSnO2とSiの組合
せが適当である。また、第１図中、B2は第一半
導体の禁制帯、は空乏層ないし反転層、Ｆは
フエルミ準位を示している。 Note that there are various combinations of materials that satisfy this relationship, and among them, the combination of SnO 2 and Si described above is suitable. Further, in FIG. 1, B 2 indicates a forbidden band of the first semiconductor, B 2 indicates a depletion layer or an inversion layer, and F indicates a Fermi level.
しかし、こうしたバンド構造を取る従来例にお
いては、光電流の取り出しに接合の界面準位のみ
をあてにしていた。 However, in conventional examples with such a band structure, only the interface level of the junction was relied upon to extract the photocurrent.
すなわち、従来のイソタイプヘテロ接合光電変
換素子においては、第二の半導体の接合近傍に
おいて光励起された少数キヤリアが、接合界面の
少数キヤリア再結合準位（界面準位より成る）を
介して多数キヤリアと再結合し、第一の半導体
内を多数キヤリア電流として流れなければ光電流
として取り出せなかつたし、開放（光）電圧も、
上記のように原理的には優れていると考えらえる
バンド構造から予想される程には増加しなかつ
た。 In other words, in the conventional isotype heterojunction photoelectric conversion device, the minority carriers that are optically excited near the junction of the second semiconductor become majority carriers via the minority carrier recombination level (consisting of the interface level) at the junction interface. Unless it recombines with the first semiconductor and flows as a multiple carrier current in the first semiconductor, it cannot be extracted as a photocurrent, and the open circuit (photo) voltage also
As mentioned above, the increase was not as much as expected from the band structure, which is considered to be excellent in principle.
また、このように界面準位のみをあてにしてい
たのでは、その密度の再現性、安定性に劣るし、
絶対量の不足も予想された。 In addition, relying only on the interface states in this way results in poor reproducibility and stability of the density.
A shortage in absolute quantity was also expected.
本発明は、上記問題点を解決するための成され
たものであり、接合を形成する二つの半導体領域
間にあつて、当該接合におけるバンド構造関係に
全く新規なる関係を提案するものである。 The present invention has been made to solve the above-mentioned problems, and proposes a completely new relationship between the band structure of the junction between two semiconductor regions forming the junction.
以下、この発明を第２図に示す基本的な実施例
に即して説明する。 The present invention will be described below with reference to the basic embodiment shown in FIG.
本発明においては、広いバンドギヤツプの第一
の半導体と、これより狭いバンドギヤツプの第
二の半導体に関し、それぞれの材料には接合に
おいて禁制帯B2，B4が互いに重なり合う部分の
ないものを選ぶ。 In the present invention, for the first semiconductor with a wide bandgap and the second semiconductor with a narrower bandgap, materials are selected that do not have a portion where the forbidden bands B 2 and B 4 overlap each other during bonding.
このようにすると、第２図に示すように、狭い
バンドギヤツプの第二の半導体の表面で光によ
つて励起され、結合まで輸送された少数キヤリア
をバンド間のトンネルで矢印Ａで示すように第一
の半導体へ輸送し、多数キヤリア電流として外
部に取り出すことができる。 In this way, as shown in FIG. 2, the minority carriers excited by light on the surface of the second semiconductor with a narrow bandgap and transported to the coupling are transferred to the tunnel between the bands as shown by arrow A. It can be transported to one semiconductor and taken out as a multiple carrier current.
この場合は第一の半導体の領域は接合におい
てすでに再結合準位の少ない低抵抗の半導体で良
く、したがつて電力の外部端子からの取り出しも
効率良く行なうことができる。 In this case, the first semiconductor region may be a low-resistance semiconductor with few recombination levels already at the junction, and therefore power can be extracted efficiently from the external terminal.
この組合せの具体例としては、第一の半導体
としてｐ形GaSb、第二の半導体としてｐ形
InAs、同様にｎ形GaSbとｎ形InSb、ｐ形Geと
ｐ形InAsが挙げられる。 A specific example of this combination is p-type GaSb as the first semiconductor and p-type GaSb as the second semiconductor.
Examples include InAs, n-type GaSb, n-type InSb, p-type Ge and p-type InAs.
以上のように、この発明によれば、制御困難で
再現性の劣るヘテロ接合の界面準位をあてにする
ことなく、イソタイプのヘテロ接合におけるバン
ド構造関係の特定によつて高電力変換効率の光・
電力変換素子が得られるので、特に太陽電池産業
に寄与する所、大である。 As described above, according to the present invention, light with high power conversion efficiency can be achieved by specifying the band structure relationship in isotype heterojunctions without relying on the interface states of heterojunctions, which are difficult to control and have poor reproducibility.・
Since power conversion elements can be obtained, it is particularly useful for the solar cell industry.
第１図は本発明による改良対象としての光電変
換素子のエネルギーバンドを示す図、第２図はこ
の発明の一実施例のエネルギーバンドを示す図で
ある。
図中、は第一の半導体、は第二の半導体、
は空乏層または反転層、B1は第一半導体の充
満帯、B2は第一半導体の禁制帯、B3は第一半導
体の伝導帯、B4は第二半導体の禁制帯、である。
FIG. 1 is a diagram showing the energy band of a photoelectric conversion element to be improved by the present invention, and FIG. 2 is a diagram showing the energy band of one embodiment of the present invention. In the figure, indicates the first semiconductor, indicates the second semiconductor,
is the depletion layer or inversion layer, B 1 is the full band of the first semiconductor, B 2 is the forbidden band of the first semiconductor, B 3 is the conduction band of the first semiconductor, and B 4 is the forbidden band of the second semiconductor.
Claims (1)
の第一半導体領域と同一導電形であるがこれより
狭いバンドギヤツプの第二の半導体領域と、該二
つの半導体領域間の接合と、該接合の界面近傍に
おいて上記第二の半導体に誘起された空乏層また
は反転層とから成る光電変換素子であつて； 上記二つの半導体領域の禁制帯は、上記接合に
おいて互いに重なり合うエネルギーレベルがない
ことを特徴とするイソタイプヘテロ接合光・電力
変換素子。[Scope of Claims] 1. A first semiconductor region with a wide bandgap, a second semiconductor region of the same conductivity type as the first semiconductor region but with a narrower bandgap, and a junction between the two semiconductor regions; A photoelectric conversion element comprising a depletion layer or an inversion layer induced in the second semiconductor near the interface of the junction; and a forbidden band of the two semiconductor regions has no energy level that overlaps with each other at the junction. An isotype heterojunction optical/power conversion device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61237781A JPS62188284A (en) | 1986-10-06 | 1986-10-06 | Isotypic hetero junction photoelectric power conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61237781A JPS62188284A (en) | 1986-10-06 | 1986-10-06 | Isotypic hetero junction photoelectric power conversion element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3337777A Division JPS53118994A (en) | 1977-03-28 | 1977-03-28 | Iso type hetero junction photo electric conversion element and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62188284A JPS62188284A (en) | 1987-08-17 |
| JPH0426792B2 true JPH0426792B2 (en) | 1992-05-08 |
Family
ID=17020336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61237781A Granted JPS62188284A (en) | 1986-10-06 | 1986-10-06 | Isotypic hetero junction photoelectric power conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62188284A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7659474B2 (en) * | 2005-05-04 | 2010-02-09 | The Boeing Company | Solar cell array with isotype-heterojunction diode |
-
1986
- 1986-10-06 JP JP61237781A patent/JPS62188284A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62188284A (en) | 1987-08-17 |
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