JPH04273465A - Heat sink of circuit substrate - Google Patents
Heat sink of circuit substrateInfo
- Publication number
- JPH04273465A JPH04273465A JP3055462A JP5546291A JPH04273465A JP H04273465 A JPH04273465 A JP H04273465A JP 3055462 A JP3055462 A JP 3055462A JP 5546291 A JP5546291 A JP 5546291A JP H04273465 A JPH04273465 A JP H04273465A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- semiconductor element
- cylindrical member
- heat dissipation
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/701—Tape-automated bond [TAB] connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【０００１】0001
【産業上の利用分野】本発明は多層回路基板に使用して
特に好適な回路基板における放熱装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation device for a circuit board, which is particularly suitable for use in a multilayer circuit board.
【０００２】0002
【従来の技術】従来から既に提案されている多層回路基
板における放熱装置は、図３に示すような構造となって
いる。すなわち、多層回路基板１の一方の面上に直接、
半導体素子２を半田付け等の接着手段により取り付け、
電気的な接続をワイヤボンディング３にて行い、一方、
多層回路基板１の他方の面には放熱フィン４が配設され
ている。2. Description of the Related Art A heat dissipation device for a multilayer circuit board that has been proposed in the past has a structure as shown in FIG. That is, directly on one side of the multilayer circuit board 1,
Attach the semiconductor element 2 by adhesive means such as soldering,
Electrical connection is made by wire bonding 3, while
A radiation fin 4 is provided on the other surface of the multilayer circuit board 1 .
【０００３】また、多層回路基板１上に搭載される半導
体素子２の発熱が大きい場合は、多層回路基板１内に放
熱用のビア５を設けた構造としている。Further, when the semiconductor element 2 mounted on the multilayer circuit board 1 generates a large amount of heat, a structure is adopted in which vias 5 for heat dissipation are provided in the multilayer circuit board 1.
【０００４】このような構造は、半導体素子２の発熱を
半導体素子２の裏面から多層回路基板１へ熱伝導にて放
熱し、さらに多層回路基板１から放熱フィン４へ熱伝導
し、放熱することを目的としている。[0004] Such a structure allows the heat generated by the semiconductor element 2 to be radiated from the back surface of the semiconductor element 2 to the multilayer circuit board 1 by thermal conduction, and further from the multilayer circuit board 1 to the heat radiation fins 4 for heat radiation. It is an object.
【０００５】[0005]
【発明が解決しようとする課題】しかるに、従来の構造
は、半導体素子２の裏面からの熱伝導による放熱を目的
とした構造である。このため、多ピン式の半導体素子２
を効率よく搭載するＴＡＢ（テープ・オートメィテッド
・ボンディングの略；ワイヤレスボンディングの一種で
、フィルムキャリアテープによる半導体の基板接続工法
）実装工法では、半導体素子２の裏面が多層回路基板１
より浮き、間隙が介在するため、半導体素子２の発熱を
効率よく外部に放熱できないという問題があった。However, the conventional structure is designed to dissipate heat through heat conduction from the back surface of the semiconductor element 2. Therefore, the multi-pin type semiconductor element 2
In the TAB (abbreviation for tape automated bonding; a type of wireless bonding, a semiconductor board connection method using a film carrier tape) mounting method, the back side of the semiconductor element 2 is attached to the multilayer circuit board 1.
There was a problem in that the heat generated by the semiconductor element 2 could not be efficiently radiated to the outside because it was more floating and there were gaps.
【０００６】本発明の目的は上述した問題に鑑みなされ
たもので、ＴＡＢ実装における回路基板でも半導体素子
からの発熱を効率よく外部に放熱できる回路基板におけ
る放熱装置を提供するにある。SUMMARY OF THE INVENTION An object of the present invention was made in view of the above-mentioned problems, and it is an object of the present invention to provide a heat radiating device for a circuit board that can efficiently radiate heat generated from a semiconductor element to the outside even in a TAB mounted circuit board.
【０００７】[0007]
【課題を解決するための手段】請求項１記載の発明は、
一方の面に発熱を伴う半導体素子ＴＡＢ実装にて設け、
かつ他方の面に放熱フィンを設けた回路基板において、
前記半導体素子と放熱フィンとの間の回路基板に貫通孔
を穿設すると共に、この貫通孔に円柱部材を嵌合し、半
導体素子とこの円柱部材の間に熱伝導性の高いペースト
を介在した構成としたものである。[Means for solving the problem] The invention according to claim 1 includes:
A semiconductor element that generates heat is mounted on one side using TAB mounting,
And in a circuit board with heat dissipation fins provided on the other side,
A through hole is formed in the circuit board between the semiconductor element and the heat dissipation fin, a cylindrical member is fitted into the through hole, and a highly thermally conductive paste is interposed between the semiconductor element and the cylindrical member. It is structured as follows.
【０００８】請求項２記載の発明は、円柱部材を貫通孔
とほぼ同形状に形成し、放熱フィンに一体に形成したも
のである。[0008] According to the second aspect of the invention, the cylindrical member is formed in substantially the same shape as the through hole, and is integrally formed with the radiation fin.
【０００９】[0009]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【００１０】図１は本発明に係わる回路基板における放
熱装置の一実施例を示す断面図、図２は同回路基板にお
ける放熱装置の組立て前の断面図である。多層回路基板
１０の上面側には発熱を伴う半導体素子１１がＴＡＢ実
装工法により搭載されていると共に、多層回路基板１０
の底面側には放熱フィン１２が配設されている。半導体
素子１１は多層回路基板１０にＴＡＢ工法によるリード
端子１３を介して電気的に接続されている。このとき、
多層回路基板１０の上面と半導体素子１１の底面とは完
全に密着せず、間隙が設けられた浮遊構造となっている
。FIG. 1 is a sectional view showing an embodiment of a heat radiating device on a circuit board according to the present invention, and FIG. 2 is a sectional view of the heat radiating device on the same circuit board before assembly. A semiconductor element 11 that generates heat is mounted on the upper surface side of the multilayer circuit board 10 by the TAB mounting method.
Radiating fins 12 are arranged on the bottom side. The semiconductor element 11 is electrically connected to the multilayer circuit board 10 via lead terminals 13 by the TAB method. At this time,
The top surface of the multilayer circuit board 10 and the bottom surface of the semiconductor element 11 are not in complete contact with each other, and have a floating structure with a gap provided therebetween.
【００１１】また、多層回路基板１０において、半導体
素子１１と放熱フィン１２との間の箇所には貫通孔１４
が穿設されており、この貫通孔１４には貫通孔１４とほ
ぼ同形状に成る円柱部材１５がそれぞれ嵌合した構造と
なっている。この円柱部材１５は放熱フィン１２の背面
側に一体に設けられており、多層回路基板１０の底面側
から上面側に到達する長さに形成されている。この円柱
部材１５の上面と半導体素子１１の底面との間には熱伝
導性の高いペースト１６が介在しており、円柱部材１５
の上面と半導体素子１１の底面との間に設けられる間隙
を埋めた構造となっている。In addition, in the multilayer circuit board 10, a through hole 14 is provided between the semiconductor element 11 and the radiation fin 12.
are bored, and each of the through holes 14 has a structure in which a cylindrical member 15 having substantially the same shape as the through hole 14 is fitted. This cylindrical member 15 is integrally provided on the back side of the radiation fin 12, and is formed to have a length that reaches from the bottom side to the top side of the multilayer circuit board 10. A highly thermally conductive paste 16 is interposed between the top surface of this cylindrical member 15 and the bottom surface of the semiconductor element 11.
The structure is such that the gap provided between the top surface of the semiconductor element 11 and the bottom surface of the semiconductor element 11 is filled.
【００１２】これをさらに詳述するに、半導体素子１１
を多層回路基板１０に搭載した後、図２に示すごとく半
導体素子１１の底面に多層回路基板１０の貫通孔１４を
通して熱伝導性の高いペースト１６を多層回路基板１０
の底面側から注入接着させる。そして、このペースト１
６を注入接着させた後、放熱フィン１２の円柱部材１５
を多層回路基板１０の貫通孔１４に嵌合するように取り
付ける。このようにするとペースト１６は、図１に示す
ごとく半導体素子１１と多層回路基板１０の間の間隙お
よび半導体素子１１の底面と円柱部材１５の上面との間
の間隙に埋設される。To explain this in more detail, the semiconductor element 11
is mounted on the multilayer circuit board 10, as shown in FIG.
Inject and adhere from the bottom side. And this paste 1
6 is injected and bonded, the cylindrical member 15 of the radiation fin 12 is attached.
is attached so as to fit into the through hole 14 of the multilayer circuit board 10. In this way, the paste 16 is embedded in the gap between the semiconductor element 11 and the multilayer circuit board 10 and the gap between the bottom surface of the semiconductor element 11 and the top surface of the cylindrical member 15, as shown in FIG.
【００１３】したがって、半導体素子１１からの発熱は
ペースト１６、円柱部材１５、放熱フィン１２へと熱伝
導され、外部へ効率よく放熱される。Therefore, the heat generated from the semiconductor element 11 is conducted to the paste 16, the cylindrical member 15, and the radiation fins 12, and is efficiently radiated to the outside.
【００１４】[0014]
【発明の効果】以上説明したように本発明に係わる回路
基板における放熱装置によれば、半導体素子と放熱フィ
ンとの間の回路基板に貫通孔を穿設すると共に、この貫
通孔に円柱部材を嵌合し、半導体素子とこの円柱部材の
間に熱伝導性の高いペーストを介在した構成としたこと
により、ＴＡＢ工法にて実装した半導体素子の発熱をこ
の半導体素子の裏面からペースト、円柱部材を介して放
熱フィンに伝導できるようになった。したがって、ＴＡ
Ｂ実装における多層回路基板でも半導体素子からの発熱
を効率よく外部に放熱できるという優れた効果を奏する
。As explained above, according to the heat dissipation device for a circuit board according to the present invention, a through hole is formed in the circuit board between the semiconductor element and the heat dissipation fin, and a cylindrical member is inserted into the through hole. By fitting a structure in which a highly thermally conductive paste is interposed between the semiconductor element and this cylindrical member, the heat generated by the semiconductor element mounted using the TAB method can be absorbed from the back side of the semiconductor element by paste and the cylindrical member. The heat can now be conducted to the heat dissipation fins. Therefore, T.A.
Even in a multilayer circuit board in B-mounting, heat generated from semiconductor elements can be efficiently radiated to the outside, which is an excellent effect.
【図１】本発明に係わる回路基板における放熱装置の一
実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of a heat dissipation device in a circuit board according to the present invention.
【図２】同回路基板における放熱装置の組立て前の断面
図である。FIG. 2 is a sectional view of a heat dissipation device on the same circuit board before being assembled.
【図３】従来の回路基板における放熱装置の一例を示す
断面図である。FIG. 3 is a cross-sectional view showing an example of a heat dissipation device in a conventional circuit board.
１０ 多層回路基板 １１ 半導体素子 １２ 放熱フィン １４ 貫通孔 １５ 円柱部材 １６ ペースト 10 Multilayer circuit board 11 Semiconductor element 12 Heat dissipation fin 14 Through hole 15 Cylindrical member 16 Paste
Claims (2)
ＡＢ実装にて設け、かつ他方の面に放熱フィンを設けた
回路基板において、前記半導体素子と放熱フィンとの間
の回路基板に貫通孔を穿設すると共に、この貫通孔に円
柱部材を嵌合し、半導体素子とこの円柱部材の間に熱伝
導性の高いペーストを介在して成ることを特徴とする回
路基板における放熱装置。Claim 1: A semiconductor element that generates heat on one side of T
In a circuit board provided by AB mounting and provided with a radiation fin on the other side, a through hole is bored in the circuit board between the semiconductor element and the radiation fin, and a cylindrical member is fitted into the through hole. A heat dissipation device for a circuit board, characterized in that a highly thermally conductive paste is interposed between a semiconductor element and the cylindrical member.
成り、放熱フィンに一体に形成されて成ることを特徴と
する請求項１記載の回路基板における放熱装置。2. The heat dissipation device for a circuit board according to claim 1, wherein the cylindrical member has substantially the same shape as the through hole and is integrally formed with a heat dissipation fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3055462A JPH04273465A (en) | 1991-02-28 | 1991-02-28 | Heat sink of circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3055462A JPH04273465A (en) | 1991-02-28 | 1991-02-28 | Heat sink of circuit substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04273465A true JPH04273465A (en) | 1992-09-29 |
Family
ID=12999273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3055462A Pending JPH04273465A (en) | 1991-02-28 | 1991-02-28 | Heat sink of circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04273465A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014107378A (en) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | Power semiconductor device |
-
1991
- 1991-02-28 JP JP3055462A patent/JPH04273465A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014107378A (en) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | Power semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19970701 |