JPH04285176A - Deposited film forming device using microwave plasma CVD method - Google Patents

Abstract

PURPOSE:To inexpensively and stably form a high-quality deposited film with good mass-productivity at a high rate on plural cylindrical substrates. CONSTITUTION:This device for forming a deposited film by microwave plasma CVD method has a vacuum vessel for forming the deposited film and a detachable holding member 100 constituting a part of the wall of the vacuum vessel, having a dielectric window 102 and used for simultaneously holding plural cylindrical substrate 101 to surround the window 102, and a motor 104 is fixed to the holding member 100 to rotate each substrate 101.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a deposited film forming apparatus for forming a deposited film on a cylindrical substrate, and particularly to a deposition film using a microwave plasma CVD method for simultaneously forming a deposited film on a plurality of cylindrical substrates. The present invention relates to a film forming apparatus.

0002

[Prior Art] Element members used in semiconductor devices, photoreceptor devices for electrophotography, line sensors for image input, imaging devices, photovoltaic devices, etc., are compensated with, for example, hydrogen and/or halogen (e.g., fluorine, chlorine). Amorphous deposited films such as amorphous silicon have been proposed, and some of them have been put into practical use.

Conventional methods for forming such an amorphous deposited film include a sputtering method, a thermal CVD method in which a source gas is decomposed by heat, an optical CVD method in which a source gas is decomposed by light, and a plasma CVD method in which a source gas is decomposed by plasma. A large number of methods are known. Among these, the plasma CVD method is a method in which a raw material gas is decomposed by direct current, high frequency, microwave glow discharge, etc., and a thin film deposited film is formed on a substrate such as glass, quartz, heat-resistant synthetic resin film, stainless steel, or aluminum. It is currently widely used in the formation of amorphous silicon deposited films used in electrophotographic photoreceptors. Particularly in recent years, microwave plasma CVD methods that utilize microwave glow discharge decomposition have attracted industrial attention. The microwave plasma CVD method has the advantages of a higher film deposition rate and higher raw material gas utilization efficiency than other methods.

An example of microwave plasma CVD technology that takes advantage of these advantages is disclosed in US Pat. No. 4,504,518. This technique is to obtain a high-quality deposited film at a high film deposition rate by performing a microwave plasma CVD method under a low pressure of 0.1 Torr or less. Further, a technique for improving the utilization efficiency of raw material gas in the microwave plasma CVD method is described in JP-A-60-186849. In this technology, a plurality of cylindrical substrates are arranged to surround a microwave energy introduction part to form an internal chamber (i.e., a deposited film forming space), which greatly improves the efficiency of raw material gas utilization. It was designed to increase it. In addition, when applying the formation of a deposited film on a cylindrical substrate by the microwave plasma CVD method to mass production, from the viewpoint of improving the quality of the deposited film and improving the utilization efficiency of the equipment,
It is desirable to include means for transporting the substrate under a vacuum atmosphere.

A typical example of a conventional microwave plasma CVD deposition film forming apparatus designed with these points in mind is shown in FIGS. 4 and 5.

As shown in FIG. 4, a vacuum chamber 401 for forming a deposited film is connected to an exhaust means 403 via a valve 402.
is connected. A gate valve 404 is attached to the top surface of the vacuum container 401. This gate valve 4
04 is a cylindrical base body 43 held together with a holding member 430 in the movable vacuum vessel, along with another gate valve attached to the movable vacuum vessel (not shown).
1 into the vacuum container 401 for forming a deposited film without breaking the vacuum. When this gate valve 404 is brought into close contact with another gate valve attached to a moving vacuum container (not shown), an exhaust means 405 for exhausting the space between the two gate valves causes the valve 406 to evacuate. connected via. Further, a flange 407 having a circular center opening is provided at the upper part of the inside of the vacuum container 401 for forming a deposited film.
A vacuum sealing member 408 such as an O-ring is attached to the upper surface of the flange 407 so as to surround the central opening. By closing the central opening, the vacuum container 401 can be hermetically sealed.

The holding member 430 for holding the cylindrical base 431 is, as shown in FIG. It is provided. The outer diameter of the holding member 430 is
The diameter of the center opening of the flange 407 is larger than that of the center opening, and the holding member 430 and the vacuum sealing member 408 can close the center opening. multiple base bodies 43
1 is arranged on a concentric circle centered on the dielectric window 432, and the central axis in the longitudinal direction of the base body 431 is aligned with the holding member 430.
It is rotatably and removably supported on one surface of the holding member 430 so as to be perpendicular to .

A plurality of heaters 411 and a plurality of rotating shafts 412 are provided perpendicularly to the bottom surface of the vacuum container 401, corresponding to each base 431. As shown in FIG. 4, when the center opening of the flange 407 is closed by the holding member 430 so that the cylindrical base 431 is on the lower side, that is, when the base 431 is attached to the vacuum container 401, these heaters 411 and rotating shaft 412 are inserted into each base 431, respectively. The heater 411 is for heating the base 431. The rotation shaft 412 is for supporting the base body 431 and rotating it around its central axis in the longitudinal direction.
The other end is connected to the inner upper end portion of the base body 431 which is attached to the vacuum container 401. Furthermore, a dielectric window 4 for introducing microwaves into the vacuum container 401 is located approximately at the center of the bottom surface of the vacuum container 401.
14 are provided. This dielectric window 414
31 is in a state where it is attached to the vacuum container 401, it faces a dielectric window 432 provided in the holding member 430. It is preferable that the dimensions of each dielectric window 414, 432 and each base 431 are determined so that the space surrounded by each base body 431 becomes a resonant cavity for microwaves. Further, a gas introduction pipe 415 for supplying raw material gas into the vacuum container 401 is provided, and the gas introduction pipe 415
is connected to a raw material gas supply source (not shown) via a mass flow controller 416.

Next, this conventional microwave plasma CV
The operation of the deposited film forming apparatus using the D method will be explained.

First, the cylindrical base 431 is attached to the holding member 43.
0, put it into a moving vacuum container (not shown), and evacuated the inside of the vacuum container. Further, the vacuum container 401 for forming the deposited film is evacuated in advance using an exhaust means 403. Subsequently, the moving vacuum container is transported to a position opposite to the vacuum container 401 for forming a deposited film, and the gate valve of the moving vacuum container and the gate valve 404 of the vacuum container 401 for forming a deposited film are brought into close contact. Then, the space between both gate valves is evacuated by exhaust means 405. When the space is sufficiently evacuated, open both gate valves and remove the base 43.
1 together with the holding member 430 and a vacuum container 401 for forming a deposited film.
Transfer to. At this time, the holding member 430 closes the central opening of the flange 407 of the vacuum container 401, and each base body 431 also closes the center opening of the flange 407 of the vacuum container 401.
2, respectively.

Next, the vacuum in the space between the two gate valves is broken, and the moving vacuum container is moved from the position facing the vacuum container 401 for forming the deposited film. Holding member 43
0 is in close contact with the vacuum seal member 408 and closes the central opening, so the vacuum inside the vacuum container 401 is not broken. Then, the dielectric window 4 on the bottom of the vacuum container 401
14 and the dielectric window 432 of the holding member 430 are connected to waveguides (not shown) connected to a microwave power source, respectively.

The base body 431 is heated by the heater 411 and rotated by driving the rotary shaft 412 by the motor 413, and while supplying raw material gas into the vacuum container 401 from the gas introduction pipe 415, the base body 431 is heated by the microwave power source. When microwaves are introduced into the vacuum container 401, a microwave plasma discharge is generated, the source gas is decomposed, and a deposited film is formed on the surface of the base 431. When the formation of the deposited film is completed, the moving vacuum container is again moved to a position opposite to the vacuum container 401 for deposited film formation, and the substrate 431 is moved to the holding member 430 without breaking the vacuum via both gate valves. All it has to do is to transfer it to a vacuum container for transportation.

With the conventional deposited film forming apparatus as described above, it has become possible to mass-produce deposited films having practical characteristics and uniformity at a somewhat low cost. However, in recent years, there has been an increasing demand for further cost reduction, and in addition, from the standpoint of resource conservation, attempts have been made to reduce the diameter of the cylindrical base body in order to reduce the amount of material used. This deposited film forming apparatus has a configuration in which a cylindrical base surrounds a dielectric window to form a deposited film forming space, so by reducing the diameter of the base, the number of bases surrounding the dielectric window, i.e., the number of deposited films at the same time, can be reduced. It is possible to increase the number of substrates on which the deposited film is formed, greatly improving production efficiency, and reducing the cost of materials required for the substrates, which can be expected to significantly reduce the cost of the substrate on which the deposited film is formed. .

[0014]

[Problems to be Solved by the Invention] In the conventional deposited film forming apparatus using the microwave plasma CVD method, the cylindrical base surrounds the deposited film forming space, so it is necessary to hold and rotate the base during deposited film formation. It is necessary to provide a mechanism. For this reason, as in the above-mentioned deposited film forming apparatus, a rotating shaft for holding and rotating the cylindrical base within the vacuum vessel is generally provided within the vacuum vessel. A heater for heating the base to a predetermined temperature is also designed to be disposed parallel to the rotation axis so as to fit inside the base.

However, in the deposited film forming apparatus having such a configuration, when the diameter of the cylindrical base is reduced beyond a certain level, for example, when the diameter is reduced to 80 mm or less, the inner surface of the base and the rotating shaft or the heater become There is a problem in that it becomes difficult to maintain a sufficient distance, and it becomes difficult to attach the base body held by the holding member to the rotating shaft. In other words, when the inner surface of the substrate comes into careless contact with the rotating shaft or heater, so-called "chips" are generated, contaminating the vacuum atmosphere, and the so-called "spheroidal protrusions" in which the deposited film grows abnormally as the chips become nuclei. ” occurs frequently. Furthermore, scratches may occur on the surface of the substrate. Although it is possible to install a heater outside the substrate or other means to heat the substrate, the influence of the rotating shaft inside the substrate tends to cause temperature unevenness on the substrate, resulting in poor deposited film. This results in unevenness in characteristics and a decrease in yield.

Furthermore, in the conventional deposited film forming apparatus described above, the number and arrangement of the substrates are adjusted depending on the diameter of the cylindrical substrate in order to maximize the utilization efficiency of the raw material gas and maximize the deposition rate. Must be decided. For this reason, it is necessary to change the arrangement of the rotating shaft as the diameter of the substrate or deposition conditions changes, and a deposited film forming apparatus must be manufactured each time the diameter or deposition conditions are changed, resulting in increased equipment costs. The problem is that it is expensive.

Due to these problems, the cost of forming deposited films obtained by conventional deposited film forming apparatuses has not decreased as expected and remains expensive. be.

An object of the present invention is to overcome the problems of conventional deposited film forming apparatuses as described above, and to simultaneously form high quality deposited films on a plurality of cylindrical substrates at low cost and with good mass productivity. An object of the present invention is to provide a deposited film forming apparatus using a microwave plasma CVD method that can be used.

[0019]

[Means for Solving the Problems] A deposited film forming apparatus using a microwave plasma CVD method of the present invention to achieve the above object includes a vacuum container for forming a deposited film, and a part of the wall of the vacuum container. a holding member that is removable and has a dielectric window and holds a plurality of cylindrical bases at the same time so as to surround the dielectric window; a conveying means for transporting and attaching and detaching the vacuum container to the vacuum container; and an exhaust means for evacuating the inside of the vacuum container.
a supply means for supplying raw material gas into the vacuum container, and forms a deposited film on the surface of the substrate by introducing microwave energy from the dielectric window into the space surrounded by the substrates. The deposited film forming apparatus using the wave plasma CVD method is characterized in that the holding member is provided with a rotating means for rotating each of the substrates held by the holding member.

[0020] A heating vacuum container is provided for preheating the substrate held by the holding member, and the conveying means transfers the holding member holding the substrate from the heating vacuum container to the vacuum for deposited film formation. It may also be transported to a container under a vacuum atmosphere.

[0021]

[Operation] Since the rotation means for rotating the cylindrical base is attached to the holding member, there is no need to provide a rotating shaft in the vacuum container body to insert inside the base and rotate the base. When transporting the holding member that holds the substrate in a vacuum atmosphere, it is possible to prevent the generation of "chips" and scratches on the surface of the substrate, and the presence of the rotating shaft suppresses uneven temperature distribution on the substrate and prevents deposition. The properties of the film are uniform, and since the holding member has a rotating means, it is only necessary to change the design of the holding member when changing the diameter of the cylindrical substrate or the deposition conditions.

Furthermore, when a heating vacuum container is provided and the transport means transports the holding member holding the substrate in a vacuum atmosphere from the heating vacuum container to the deposited film forming vacuum container, Since the substrate is heated in advance, it is possible to save time for heating the substrate in a vacuum container for forming a deposited film.

[0023]

Embodiments Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows the microwave plasma C of this embodiment.
Holding member 10 used in a deposited film forming apparatus using VD method
FIG. The holding member 100 is a disc-shaped member, and a dielectric window 102 having an airtight structure that transmits microwaves is provided approximately at the center. Multiple cylindrical bases 1
01 is removably attached to one end of each rotating shaft 103 such that the rotating shaft 103 is located on an extension of the central axis in the longitudinal direction. Each rotating shaft 103 is rotatably supported by the holding member 100 so as to be perpendicular to the holding member 100 and arranged at equal intervals on the same circle centered on the dielectric window 102 . Therefore, each base 101 surrounds the dielectric window 102 and is held by the holding member 100 so as to be parallel to each other.

The upper surface of the holding member 100, that is, the base 10
A motor 104 provided for each rotating shaft 103 is attached to the surface opposite to the side holding the rotating shaft 103 via an attachment means (not shown). The drive shaft of each motor 104 is connected to the corresponding rotating shaft 103, respectively. By rotating each motor 104,
The corresponding rotating shaft 103 rotates, and the corresponding base body 101 rotates.

Next, the vacuum container 10 for forming a deposited film will be explained with reference to FIG.

The vacuum container 10 has an open upper end surface, and a gate valve 11 is attached to the upper end surface. The gate valve 11 is connected to a moving vacuum container 3 shown in FIG.
This deposited film is formed on the substrate 101 held in the moving vacuum container 30 together with the holding member 100 together with the other gate valve 31. This serves as the loading/unloading port for loading and unloading the vacuum container 10 for use. This gate valve 11 is connected via a valve 13 to an exhaust means 12 for evacuating the space between the two gate valves when the gate valve 11 and the other gate valve 31 are brought into close contact with each other.

[0028] A flange 110 having a circular central opening is provided at the upper part of the inside of the vacuum vessel 10, and an O flange 110 is provided on the upper surface of the flange 110 so as to surround the central opening.
A vacuum seal member 111 such as a ring is attached. The size of the center opening is slightly smaller than the holding member 100, and the center opening is similar to the holding member 10 detailed in FIG.
By plugging with 0, the vacuum container 10 can be hermetically sealed. When closing the center opening with the holding member 100, each base body 101 is attached to the vacuum vessel 10 by positioning each base body 101 inside the vacuum vessel 10, that is, on the lower side of the holding member 100 in the drawing. It has become so. Further, an exhaust pipe 114 whose other end is connected to an exhaust means 15 such as an exhaust pump via a valve 14 is connected to the vacuum vessel 10 . The exhaust pipe 114 is attached to the vacuum vessel 10 at a location below the flange 110.

A gas introduction pipe 115 is provided, the other end of which is connected to a raw material gas supply source (not shown) such as a gas cylinder, and one end of the gas introduction pipe 115 opens into the vacuum container 10 . A mass flow controller 116 is provided in the middle of the gas introduction pipe 115, and by controlling the mass flow controller, the flow rate of the raw material gas supplied into the vacuum container 10 can be adjusted. Furthermore, a heater 117 for heating the base 101 attached to the vacuum container 10 is provided within the vacuum container 10 . A dielectric window 118 that transmits microwaves and has an airtight structure is provided approximately at the center of the bottom surface of the vacuum container 10. This dielectric window 118 faces the dielectric window 102 provided in the holding member 100 when the holding member 100 closes the central opening of the flange 110. It is preferable that the arrangement of these dielectric windows 102 and 118 and each base 101 attached to the vacuum container 10 substantially constitutes a resonant cavity for incident microwaves.

Next, the overall structure of the deposited film forming apparatus using this microwave plasma CVD method will be explained with reference to FIG.

This deposited film forming apparatus includes, in addition to the above-mentioned vacuum container 10 for forming a deposited film, a vacuum container 20 for introducing vacuum;
It consists of a vacuum container 30 for transportation and a vacuum container 40 for cooling. Vacuum containers 20, 40 for vacuum introduction and cooling
The structure is almost the same as the vacuum container 10 for forming a deposited film described above, except that a dielectric window is not provided on the bottom of the vacuum container, a gas introduction tube is not provided, and a heater is not provided. They differ in that they are not. Therefore, gate valves 21 and 41 are provided on the upper end surfaces of the vacuum vessels 20 and 40 for vacuum introduction and cooling, respectively, and these gate valves 21 and 41 are connected to exhaust means 22 and 42 via valves 23 and 43, respectively. It is connected to the. Furthermore, exhaust means 25 and 45 are connected to the vacuum vessels 20 and 40 for vacuum introduction and cooling via valves 24 and 44, respectively. Note that the vacuum vessels 10, 20, and 40 for forming a deposited film, for introducing vacuum, and for cooling are fixed.

On the other hand, the movable vacuum container 30 can be moved by a drive means (not shown), and has a structure in which a gate valve 31 is provided on the lower end surface. This gate valve 31 can be in close contact with the gate valves 11, 21, and 41 provided in the vacuum vessels 10, 20, and 40 for deposited film formation, vacuum introduction, and cooling, respectively. 10, 20, and 40 and the moving vacuum container 30, it serves as an inlet/carry-in port when the base body 101 is delivered while attached to the holding member 100 under a vacuum atmosphere. Further, inside the moving vacuum container 30, a vertical movement mechanism (
(not shown) is provided, and an evacuation means (not shown) is further connected to the vacuum container 30.

Next, the operation of the deposited film forming apparatus using this microwave plasma CVD method will be explained.

First, a plurality of cylindrical substrates 101 for forming a deposited film are cleaned with an organic solvent such as trichloroethane.
Clean the surface by removing dirt such as oil and dust. Further, components such as the dielectric window 102 for introducing microwaves provided in the holding member 100 are also thoroughly cleaned. Then, in a dust-free room (clean room), a plurality of rotating shafts 103 that are pre-assembled in the holding member 100 are installed.
By attaching each base body 101 to one end of the holding member 100, the attachment of the base body 101 to the holding member 100 is completed.

Next, the holding member 10 holding the base 101
0 is placed in a vacuum container 20 for introducing vacuum, the gate valve 21 is closed, and the vacuum container 20 is evacuated by the exhaust means 25. Once the inside of the vacuum container 20 has been evacuated, the movable vacuum container 30, which has been evacuated in advance by an evacuation means (not shown), is moved to a position directly above the vacuum container 20 for vacuum introduction, and the movable vacuum container 30 is The provided gate valve 31 and the gate valve 21 provided in the vacuum container 20 for vacuum introduction are brought into close contact. And gate valve 2
1 by exhaust means 22 connected to both gate valves 2
Evacuate the space between 1 and 31. Once the space is evacuated,
Both gate valves 21 and 31 are opened, the holding member 100 holding the base body 101 is housed in the moving vacuum container 30 by a vertical movement mechanism (not shown), and both gate valves 21 and 31 are closed.

Subsequently, the moving vacuum container 30 containing the holding member 100 and the substrate 101 is moved to a position directly above the vacuum container 10 for forming the deposited film. The vacuum container 10 for forming the deposited film is evacuated in advance by the exhaust means 15. A gate valve 31 provided in a vacuum container 30 for transportation and a gate valve 1 provided in a vacuum container 10 for forming a deposited film.
1 are brought into close contact with each other, and the space between both gate valves 11 and 31 is evacuated by exhaust means 12. After the space is evacuated, both gate valves 11 and 31 are opened, and the holding member 100 holding the substrate 101 is transferred from the moving vacuum container 30 to the deposited film forming vacuum container 10 by a vertical movement mechanism (not shown). Then, both gate valves 11 and 31 are closed. By doing this, the base 101 is attached to the vacuum container 10 for forming a deposited film. Thereafter, the moving vacuum container 30 is moved to a position laterally shifted from directly above the vacuum container 10 for forming the deposited film.

After confirming that the holding member 100 correctly closes the center opening of the flange 110 of the vacuum vessel 10 for forming a deposited film, open the gate valve 11 and widen the portion of the vacuum vessel 10 above the flange 110. Exposure to atmospheric pressure. A vacuum seal member 111 such as an O-ring is provided around the center opening, and the holding member 110 presses the vacuum seal member 111 against the flange 110 by atmospheric pressure, so that the connection between the holding member 100 and the flange 110 is reduced. No vacuum leaks occur between the two.

Next, the dielectric window 102 provided on the holding member 100 and the dielectric window 1 provided on the bottom of the vacuum container 10 are
18 are connected to waveguides (not shown) each connected to a microwave power source (not shown). In addition, the holding member 100
The motor 104 attached to the motor 104 is electrically connected to a power source (not shown) for rotating the motor 104.

Each cylindrical base 10 is moved by the motor 104.
While rotating the substrate 101, the heater 117
is heated and maintained at a predetermined temperature. Then stop heating and
A raw material gas is introduced through the gas introduction pipe 115, and while maintaining a predetermined degree of vacuum by adjusting the opening degree of the valve 14 connected to the exhaust means 15, a frequency of 500 MHz or more, preferably a frequency of 2.45 GHz is generated. Microwaves are introduced into the vacuum vessel 10 through both dielectric windows 102, 118. As a result, each base 101 and both dielectric windows 102, 118
Microwave plasma discharge occurs in the space surrounded by the deposited film formation space, and the source gas is decomposed,
A deposited film is formed on each cylindrical substrate 101.

When a deposited film of a predetermined thickness is formed on each substrate 101, the introduction of microwaves and the supply of source gas are stopped, the rotation of each substrate 101 is stopped, and each waveguide is connected to each dielectric. Remove the motor 104 from the body windows 102 and 118.
and the power source (not shown). Next, a vacuum container 30 for transportation that has been evacuated in advance by an evacuation means (not shown) is opened.
is moved to a position directly above the vacuum container 10 for deposited film formation, and the gate valve 31 of the moving vacuum container 30 and the gate valve 11 of the vacuum container 10 for deposited film formation are brought into close contact. Since the gate valve 11 provided in the vacuum container 10 for forming a deposited film is in an open state, when the exhaust means 12 connected to the gate valve 11 is operated, air is removed from the flange 110 of the vacuum container 10 for forming a deposited film. The upper space and the space between both gate valves 11 and 31 are evacuated. After both spaces are evacuated, the gate valve 31 provided in the moving vacuum container 30 is opened, and a vertical movement mechanism (not shown) moves the substrate 101 on which the deposited film is formed together with the holding member 100 into the moving vacuum container. It is accommodated within 30. After that, both gate valves 11 and 31 are closed.

Next, the moving vacuum container 30 containing the substrate 101 on which the deposited film is formed and the holding member 100 is moved to a position directly above the cooling vacuum container 40. The cooling vacuum container 40 is evacuated in advance by an exhaust means 45. The gate valve 31 provided in the moving vacuum container 30 and the gate valve 41 provided in the cooling vacuum container 40 are brought into close contact with each other, and the space between both gate valves 41 and 31 is evacuated by the exhaust means 42. . After the space is evacuated, both gate valves 31 and 41 are opened, and the holding member 1 holding the base body 101 by a vertical movement mechanism (not shown) is opened.
00 from the vacuum container 30 for transferring to the vacuum container 40 for cooling.
and close both gate valves 31 and 41. Thereafter, the substrate 101 is left in the cooling vacuum container 40 to be cooled. Once the substrate 101 has been sufficiently cooled, the atmosphere may be introduced into the cooling vacuum container 40, the gate valve 41 may be opened, the substrate 101 may be taken out together with the holding member 100, and the substrate 101 may be removed from the holding member 100.

Although the embodiments of the present invention have been described above,
The heater provided in the vacuum container to heat the cylindrical substrate may be any vacuum-compatible heating element, and more specifically, it may be an electric resistance heating element such as a sheath heater, plate heater, or ceramic heater. Examples include heat emitting lamp heating elements such as halogen lamps and infrared lamps, and heating elements using heat exchange means using liquid or gas as a heating medium. As the surface material of these heaters, metals such as stainless steel, nickel aluminum, and copper, ceramics, and heat-resistant polymer resins can be used. In addition, these heaters may be placed in a vacuum container so that they can fit inside the cylindrical base, and may be of a size that does not interfere with the transportation of the cylindrical base. It may be placed outside of the In order to take full advantage of the advantages of the present invention, it is desirable to arrange it outside the cylindrical base.

Furthermore, in the above embodiment, the substrate is heated in the vacuum container for forming the deposited film, but
Separately from the vacuum container for forming a deposited film, a vacuum container for preheating is provided, the substrate is heated in advance in the vacuum container for preheating, and then the substrate is transferred to the vacuum container for forming the deposited film in a vacuum atmosphere. You can do it like this. In this case, the vacuum container for vacuum introduction can be the same vacuum container as the vacuum container for preheating, but from the standpoint of improving productivity, the vacuum container for preheating is separate from the vacuum container for vacuum introduction. It is desirable to provide a

The material of the holding member for holding the cylindrical base may be any material as long as it has the strength to hold a plurality of bases and dielectric windows and can maintain a vacuum. , for example, stainless steel, Al, Cr, M
o, Au, In, Nb, Te, V, Ti, Pt, Pd,
Metals such as Fe, alloys thereof, ceramics, resins, etc. are used. Further, the shape may be any shape.

Furthermore, the method for holding the cylindrical base, that is, the method for connecting it to the rotating shaft, may be any method that has the mechanical strength to hold the base and does not cause slippage between the rotating shaft and the base. Either method may be used, for example, a method of grasping with an arm or a method of hanging from a hook.

The motor for rotating the base body may be any motor as long as it has a rotating shaft and the ability to rotate the base body, and may be provided for each rotating shaft as in the above embodiment, or may be provided with a power transmission means such as a chain. Alternatively, one motor may be connected to each rotating shaft. Further, a cover may be provided over these to prevent contamination of the vacuum atmosphere.

[0047] In the present invention, the number of cylindrical base bodies arranged to surround the dielectric window may be any number as long as it can substantially form a deposited film formation space, but it is preferably three or more. This is desirable. The number and arrangement of the bases are as follows:
In order to increase the raw material gas utilization efficiency and deposition rate,
It is determined appropriately according to the diameter of the base.

Examples of the material of the substrate include stainless steel, Al, Cr, Mo, Au, In, Nb, Te, V, and T.
i, metals such as Pt, Pd, and Fe, alloys thereof, or synthetic resins such as polycarbonate with conductive treatment on the surface;
Glass, ceramics, paper, etc. are commonly used.

Any temperature is effective for the temperature of the substrate during the formation of the deposited film, but in the case of depositing amorphous silicon, it is preferably 20° C. or more and 500° C. or less, and 50° C. to obtain a good effect. More preferably, the temperature is above 450°C.

In the above embodiment, two dielectric windows connected to a waveguide are used to introduce microwaves into a vacuum container for forming a deposited film, but the number of dielectric windows is It can be increased or decreased accordingly. Materials for the dielectric window include alumina (Al2O3) and aluminum nitride (AlN).
), boron nitride (BN), silicon nitride (SiN), silicon carbide (SiC), silicon oxide (SiO2), beryllium oxide (BeO), polytetrafluoroethylene, polystyrene, and other materials with low microwave loss are usually used. Ru.

The raw material gas for forming the deposited film includes, for example, amorphous silicon forming raw material gas such as silane (SiH4) and disilane (Si2H4), and germane (GeH4).
) and other functional deposited film forming raw material gases or mixed gases thereof.

Examples of the diluent gas include hydrogen (H2), argon (Ar), and helium (He).

Nitrogen (N2),
Gases containing nitrogen atoms such as ammonia (NH3), oxygen (O2), nitric oxide (NO), dinitrogen monoxide (N2O)
), methane (CH4), ethane (C2H6), acetylene (C2H2), propane (
Hydrocarbons such as C3H8), silicon tetrafluoride (SiF4)
), fluorides such as disilicon hexafluoride (Si6F2), germanium tetrafluoride (GeF4), or a mixed gas thereof.

For doping purposes, diborane (
B2H6), boron fluoride (BF3), phosphine (P
The present invention is equally effective even if a dopant gas such as H3) is simultaneously introduced into the vacuum vessel for forming the deposited film.

Next, the results of experiments conducted on the embodiment of the present invention will be explained while comparing it with the conventional example.

(Experimental Example 1) An amorphous silicon electrophotographic photoreceptor was produced using the deposited film forming apparatus by the microwave plasma CVD method of the above-described embodiment shown in FIGS. 1 to 3 according to the procedure shown below. First, in a clean atmosphere,
As shown in FIG. 2, for a disk-shaped holding member 100 having a dielectric window 102 approximately in the center, ten aluminum diameter 50 pieces are arranged on the same circle centered on the dielectric window 102.
A cylindrical base 101 with a diameter of mm was placed. The holding member 100 with the substrate 101 arranged thereon is placed in a vacuum container 20 for introducing vacuum, and after the vacuum container 20 is evacuated, the holding member 100 holding the substrate 101 is placed in a vacuum atmosphere using the moving vacuum container 30 to deposit a film. It was carried into a vacuum container 10 for forming.

Next, the substrate 101 was heated to 300° C. by the heater 117 while being rotated by the motor 104 . Then, the vacuum container 1 for forming the deposited film is connected to the gas inlet pipe 115.
Raw material gases for producing an amorphous silicon electrophotographic photoreceptor, such as silane (SiH4) and diborane (B2H6), were introduced into the vacuum vessel 10 under the conditions shown in Table 1. At this time, the internal pressure of the vacuum container 10 is 1×10-2 Torr.
I made it as follows. Subsequently, both dielectric windows 102
, 118 at a frequency of 2.45 GHz, a charge injection blocking layer, a photosensitive layer, and a surface layer were sequentially deposited on the substrate 101 to prepare an amorphous silicon photoreceptor. Thereafter, using the moving vacuum container 30, the substrate 101 on which the deposited layer has been formed is moved to the holding member 10.
The amorphous silicon is transferred from the vacuum container 10 for forming a deposited film to the vacuum container 40 for cooling under a vacuum atmosphere while being maintained at zero, cooled to about room temperature, and the inside of the vacuum container 40 for cooling is brought to atmospheric pressure. The photoreceptor was taken out.

[0058]

[Table 1]

The ten amorphous silicon electrophotographic photoreceptors thus produced were visually inspected for scratches caused during transportation. At this time, 10
The electrophotographic photoreceptors of the book were designated as Samples A to J, respectively. In addition, by installing these electrophotographic photoreceptors in a device that is a modified Canon NP-7550 electronic copying machine for experimental purposes, it is possible to evaluate images and measure surface potential unevenness when actually used in an electrophotographic process. I did this. The image evaluation was carried out by performing a sensory test to determine the quality of the image based on image defects in the form of white dots on the solid black image when copying an A3 size solid black original. Regarding potential unevenness, when a voltage of +6 kV is applied to the charger to cause corona discharge, the dark area surface potential is calculated as follows:
Points were measured using a surface electrometer, and the value was calculated based on the dispersion of the measured values.

Table 2 shows the results of these measurements. Regarding the presence or absence of scratches, ○ indicates no scratches, and × indicates scratches. Regarding image evaluation and potential unevenness, ◎ is very good, ○ is good, △
indicates that there is no practical problem, and × indicates that there is a practical problem. In addition,
This evaluation criterion is also common to Tables 3 to 8 below.

[0061]

[Table 2]

(Comparative Example 1) Instead of the vacuum container 10 and holding member 100 for forming a deposited film in Experimental Example 1 described above, a conventional vacuum container and holding member for forming a deposited film shown in FIGS. 4 and 5 were used. 10 amorphous silicon photoreceptors were produced in the same manner as in Experimental Example 1. However, since it was difficult to fit the heater for heating the substrate inside the substrate, the heater was removed, a separate vacuum container was provided for heating, and the substrate was heated to a predetermined temperature in the vacuum container. was then transferred to a vacuum container for forming a deposited film.

Experimental Example 1 regarding the thus obtained amorphous silicon electrophotographic photoreceptors (samples A to J)
In the same manner as above, the presence or absence of scratches, image defects, and potential unevenness were measured. The results are shown in Table 3.

[0064]

[Table 3]

(Experimental Example 2) The same procedure as in Experimental Example 1 was carried out, except that an aluminum substrate with a diameter of 80 mm was used, and eight pieces of this substrate were arranged around the dielectric window of the holding member. An amorphous silicon electrophotographic photoreceptor was prepared. The eight produced amorphous silicon electrophotographic photoreceptors (Samples A to H) were measured in the same manner as in Experimental Example 1 for the presence of scratches, image defects, and potential unevenness. The results are shown in Table 4.

[0066]

[Table 4]

(Comparative Example 2) Instead of the vacuum container 10 and holding member 100 for forming a deposited film in Experimental Example 2 described above, a conventional vacuum container and holding member for forming a deposited film shown in FIGS. 4 and 5 were used. Eight amorphous silicon photoreceptors were fabricated in the same manner as in Experimental Example 2, using the following. In this comparative example, the heater for heating the substrate was arranged to fit inside the substrate. The thus obtained amorphous silicon electrophotographic photoreceptors (samples A to H) were measured in the same manner as in Experimental Example 1 for the presence or absence of scratches, image defects, and potential unevenness. The results are shown in Table 5.

[0068]

[Table 5]

(Comparative Example 3) In Comparative Example 2 described above, the heater was removed from the vacuum container for forming the deposited film, a heating vacuum container was provided separately from the vacuum container, and the substrate was heated in advance using the heating vacuum container. Eight amorphous silicon electrophotographic photoreceptors were prepared in the same manner as in Comparative Example 2 except that after heating, they were transferred to a vacuum container for forming a deposited film. The presence or absence of scratches, image defects, and potential unevenness were measured in the same manner as in Experimental Example 1 for the eight produced amorphous silicon electrophotographic photoreceptors (Samples A to H). The results are shown in Table 6.

[0070]

[Table 6]

(Experimental Example 3) The same procedure as in Experimental Example 1 was carried out, except that an aluminum substrate with a diameter of 30 mm was used, and 15 pieces of this substrate were arranged around the dielectric window of the holding member. An amorphous silicon electrophotographic photoreceptor was prepared. Experimental Example 1 was conducted for the 15 amorphous silicon electrophotographic photoreceptors (Samples A to O) created.
In the same manner as above, the presence or absence of scratches, image defects, and potential unevenness were measured. The results are shown in Table 7.

[0072]

[Table 7]

(Comparative Example 4) Instead of the vacuum container 10 and holding member 100 for forming a deposited film in Experimental Example 3 above, a conventional vacuum container and holding member for forming a deposited film shown in FIGS. 4 and 5 were used. Fifteen amorphous silicon photoreceptors were prepared in the same manner as in Experimental Example 1 using the following. However, since it was difficult to fit the heater for heating the substrate inside the substrate, the heater was removed, a separate vacuum container was provided for heating, and the substrate was heated to a predetermined temperature in the vacuum container. was then transferred to a vacuum container for forming a deposited film. The 15 amorphous silicon electrophotographic photoreceptors (samples A to O) thus obtained were measured in the same manner as in Experimental Example 1 for the presence or absence of scratches, image defects, and potential unevenness. The results are shown in Table 8.

[0074]

[Table 8]

Each of the above experimental examples 1 to 3 and comparative examples 1 to 4
As is clear from the results, the amorphous silicon electrophotographic photoreceptor produced by the deposited film forming apparatus using the microwave plasma CVD method of the present invention has a high quality, especially when a so-called "small diameter" cylindrical substrate is used. The improvement is significant. In addition, in each of Comparative Examples 1 to 4 above, each time the diameter of the cylindrical substrate was changed, the design of the vacuum container for forming the deposited film and the holding member was changed, and these vacuum containers and the holding member were manufactured each time. However, in each of the above experimental examples 1 to 3 using the device of the present invention, even if the diameter of the base body is changed, only the design of the holding member needs to be changed, and the cost of the device can be reduced by implementing the present invention. confirmed.

(Experimental Example 4) In Experimental Example 1, aluminum substrates with a diameter of 100 mm were used, and six substrates were placed on the holding member so as to surround the dielectric window.
Further, a vacuum container for preheating is separately provided, the heater 117 is removed from the vacuum container 10 for forming a deposited film, the substrate 101 is preheated in the vacuum container for preheating, and then attached to the vacuum container 10 for forming a deposited film, The rest was the same as in Experimental Example 1,
Six amorphous silicon electrophotographic photoreceptors were produced. Thereafter, the produced amorphous silicon electrophotographic photoreceptor was evaluated in the same manner as in Experimental Example 1, and as in Experimental Example 1, good results were obtained.

In Experimental Example 1, a diameter of 40 m was used as the base.
12 bases made of aluminum were placed on the holding member so as to surround the dielectric window, a vacuum container for preheating was provided separately, and the heater 117 was removed from the vacuum container 10 for forming the deposited film. , the substrate 101 was preheated in a vacuum container for preheating and then placed in the vacuum container 10 for forming a deposited film, and the conditions for forming the deposited film were as shown in Table 9, and the other conditions were as in Experimental Example 1. In the same manner, 12 amorphous silicon electrophotographic photoreceptors were produced. Thereafter, the produced amorphous silicon electrophotographic photoreceptor was evaluated in the same manner as in Experimental Example 1, and as in Experimental Example 1, good results were obtained.

[0078]

[Table 9]

Although the embodiments of the present invention have been described above, the deposited film forming apparatus using the microwave plasma CVD method of the present invention can be applied to copying machines, printers, etc. using blocking type amorphous silicon photoreceptors, high resistance type amorphous silicon photoreceptors, etc. In addition to manufacturing photoreceptors used in Even in these cases, it is possible to expect improvements in quality and significant reductions in costs. Examples of these devices include, in addition to electrophotographic photoreceptors, semiconductor devices, image input line sensors, imaging devices, photovoltaic devices, and various other electronic devices and optical devices.

[0080] Furthermore, the microwave plasma CVD of the present invention
By using a deposited film forming apparatus using the method, a high quality deposited film can be formed on a cylindrical substrate having a so-called "small diameter" (for example, a diameter of 80 mm or less) at low cost and with good mass productivity.

[0081]

Effects of the Invention As explained above, the present invention provides a mechanism for attaching a rotating means for rotating a cylindrical base to a holding member, thereby providing a rotating shaft that is inserted into the inside of the base and rotates the base. Since it is not necessary to provide it in the vacuum container body, it is possible to prevent the occurrence of "chips" and scratches on the surface of the substrate, and the uneven temperature distribution of the substrate due to the presence of the rotation axis is suppressed, resulting in uniform characteristics of the deposited film. This improves the yield and quality of the deposited film obtained, and reduces equipment costs because it is only necessary to change the design of the holding member when changing the diameter of the cylindrical substrate or the deposition conditions. It has the effect of

Furthermore, by providing a vacuum container for heating and transporting the substrate in a vacuum atmosphere from the vacuum container for heating to the vacuum container for forming the deposited film, the substrate can be transported in the vacuum container for forming the deposited film. This has the effect of improving productivity by saving time for heating.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a holding member in one embodiment of the present invention.

FIG. 2 is a perspective view of a vacuum container for forming a deposited film in an embodiment of the present invention.

FIG. 3: Microwave plasma CVD according to an embodiment of the present invention
FIG. 2 is a layout explanatory diagram showing the configuration of a deposited film forming apparatus using a method.

FIG. 4 is a perspective view of a vacuum container used in a deposited film forming apparatus using a conventional microwave plasma CVD method.

5 is a perspective view of a holding member in the deposited film forming apparatus shown in FIG. 4. FIG.

[Explanation of symbols]

10, 20, 30, 40, 401
Vacuum containers 11, 21, 31, 41, 404
Gate valves 12, 15, 22,
25, 42, 45, 403, 405 Exhaust means 13
, 14, 23, 24, 43, 44, 402, 406
Valve 100, 430
Holding member 101, 431
Substrates 102, 118, 414, 432
Dielectric window 103, 412
Rotating shaft 104, 413
Motor 110, 407
Flange 111, 408
Vacuum seal member 114
Exhaust pipe 115, 415
Gas introduction pipe 116, 416
mass flow controller

Claims (2)

[Claims] 1. A vacuum container for forming a deposited film, and a plurality of cylindrical substrates that form part of the wall of the vacuum container, are removable, have a dielectric window, and surround the dielectric windows. a holding member for simultaneously holding the substrate, a conveying means for transporting the holding member in a vacuum atmosphere while holding the base body, and attaching and detaching the holding member to the vacuum container; an exhaust means for evacuating the inside of the vacuum container; a supply means for supplying raw material gas into a container, and a microwave plasma that forms a deposited film on the surface of the substrate by introducing microwave energy from the dielectric window into a space surrounded by the substrates. A deposited film forming apparatus using a microwave plasma CVD method, characterized in that the holding member is provided with a rotating means for rotating each of the substrates held by the holding member. 2. A heating vacuum container for preheating the substrate held by the holding member, and a conveying means transporting the holding member holding the substrate from the heating vacuum container to the substrate for forming a deposited film. 2. The apparatus for forming a deposited film by a microwave plasma CVD method according to claim 1, wherein the apparatus is transported to a vacuum container under a vacuum atmosphere.