JPH04293203A - Thin film thermistor and its manufacture - Google Patents
Thin film thermistor and its manufactureInfo
- Publication number
- JPH04293203A JPH04293203A JP3058648A JP5864891A JPH04293203A JP H04293203 A JPH04293203 A JP H04293203A JP 3058648 A JP3058648 A JP 3058648A JP 5864891 A JP5864891 A JP 5864891A JP H04293203 A JPH04293203 A JP H04293203A
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- Prior art keywords
- pair
- conductive
- thin film
- paste
- film thermistor
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【0001】0001
【産業上の利用分野】本発明はリード線接続の容易な構
成の薄膜サーミスタおよびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film thermistor having a structure that allows easy connection of lead wires, and a method for manufacturing the same.
【0002】0002
【従来の技術】従来、この種の薄膜サーミスタは、図3
に示すように、平板状アルミナ基板11の一方の表面に
炭化ケイ素(SiC)などの感温抵抗体膜22と一対の
電極膜23、23’を形成して構成されている薄膜サー
ミスタ素子の一対の厚膜電極膜23、23’にPt細線
(直径0.1mm程度)などの一対の内部リード線24
、24’を接続し、さらに硝子被覆層25を形成して構
成される。しかし、この一対の内部リード線24、24
’は細線であるので、機械的強度が弱く、実用的でない
。
このためこの薄膜サーミスタ素子は、機械強度の強い外
部リード端子に接続されて、実用に供されていた。外部
リード端子は電気絶縁性支持体6に太いステンレス線(
直径1mm程度)などの一対の外部リード線27、27
’を固定して構成され、薄膜サーミスタ素子の一対の内
部リード線24、24’が外部リード端子の一対の外部
リード線27、27’にそれぞれ接続されていた。
(例えば、特公 平2−14761号公報)[Prior Art] Conventionally, this type of thin film thermistor is shown in FIG.
As shown in FIG. 1, a pair of thin film thermistor elements are formed by forming a temperature sensitive resistor film 22 such as silicon carbide (SiC) and a pair of electrode films 23 and 23' on one surface of a flat alumina substrate 11. A pair of internal lead wires 24 such as Pt thin wires (about 0.1 mm in diameter) are attached to the thick film electrode films 23 and 23'.
, 24' are connected, and a glass coating layer 25 is further formed. However, this pair of internal lead wires 24, 24
' is a thin wire, so it has weak mechanical strength and is not practical. For this reason, this thin film thermistor element has been put into practical use by being connected to an external lead terminal with strong mechanical strength. The external lead terminal is connected to the electrically insulating support 6 with a thick stainless steel wire (
A pair of external lead wires 27, 27, such as
A pair of internal lead wires 24, 24' of a thin film thermistor element were connected to a pair of external lead wires 27, 27' of an external lead terminal, respectively. (For example, Japanese Patent Publication No. Hei 2-14761)
【000
3】000
3]
【発明が解決しようとする課題】このような従来の構成
では、一対の電極膜23、23’にPt線などの一対の
内部リード線24、24’を接続している。SiC薄膜
サーミスタは耐熱性に優れ、また広い温度領域を検出す
るのに適した抵抗温度特性を有するので、0〜500℃
の温度範囲で使用される温度センサとしてオーブンなど
に実用されている。従って、一対の内部リード線24、
24’として、耐熱性に優れるPt線、Ni線が用いら
れ、また、この一対の内部リード線24、24’は、通
常、溶接法で一対の電極膜23、23’にそれぞれ接続
される方法が用いられる。さらに、一対の内部リード線
24、24’と一対の外部リード線27、27’との接
続も、通常、溶接法が用いられる。溶接接続は耐熱性に
優れるからである。しかし、これらの溶接作業は多くの
作業時間を必要とするので、価格が高くなるという課題
があった。また、一対の内部リード線24、24’の間
、あるいは一対の外部リード線7、7’の間の絶縁距離
は、一対の内部リード線24、24’の間の平板上アル
ミナ基板21の沿面距離または硝子被覆層25の沿面距
離で決められるが、この絶縁距離が5〜10mmと短い
。このような薄膜サーミスタを電気オーブンなどの調理
機器での温度センサとして用いたとき、薄膜サーミスタ
は調理庫内に配置される。調理庫内は食品加熱時に多く
の水蒸気が発生するので、水蒸気の過飽和状態になる。
この結果、薄膜サーミスタ素子の表面、すなわち、平板
上アルミナ基板21の外表面や硝子被覆層25の外表面
に多くの結露水が付着するので、一対の内部リード線2
4、24’の間の絶縁距離が短いと、その間でリークす
るという問題があった。In such a conventional structure, a pair of internal lead wires 24, 24' such as Pt wires are connected to a pair of electrode films 23, 23'. SiC thin film thermistors have excellent heat resistance and resistance temperature characteristics suitable for detecting a wide temperature range, so
It is used in ovens, etc. as a temperature sensor used in the temperature range of . Therefore, the pair of internal lead wires 24,
As the wire 24', a Pt wire or a Ni wire having excellent heat resistance is used, and the pair of internal lead wires 24, 24' are usually connected to the pair of electrode films 23, 23' by welding, respectively. is used. Furthermore, welding is usually used to connect the pair of internal lead wires 24, 24' and the pair of external lead wires 27, 27'. This is because welded connections have excellent heat resistance. However, since these welding operations require a lot of working time, there has been a problem that the cost is high. In addition, the insulation distance between the pair of internal lead wires 24, 24' or between the pair of external lead wires 7, 7' is determined by the creepage of the flat alumina substrate 21 between the pair of internal lead wires 24, 24'. This insulation distance is determined by the distance or the creeping distance of the glass coating layer 25, and is as short as 5 to 10 mm. When such a thin film thermistor is used as a temperature sensor in a cooking appliance such as an electric oven, the thin film thermistor is placed inside the cooking cabinet. A large amount of water vapor is generated in the cooking cabinet when food is heated, resulting in a supersaturated state of water vapor. As a result, a lot of condensed water adheres to the surface of the thin film thermistor element, that is, the outer surface of the flat alumina substrate 21 and the outer surface of the glass coating layer 25, so that the pair of internal lead wires 2
If the insulation distance between 4 and 24' was short, there was a problem that leakage occurred between them.
【0004】本発明はこのような課題を解決するもので
、一対の内部リード線24、24’を廃止して、電極膜
3、3’に直接外部リード線を接続することにより溶接
作業を不要にするとともに絶縁距離を長くして、リーク
を防止することを目的とするものである。The present invention solves this problem by eliminating the pair of internal lead wires 24, 24' and directly connecting the external lead wires to the electrode films 3, 3', thereby eliminating the need for welding work. The purpose of this is to increase the insulation distance and prevent leakage.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明の薄膜サーミスタは、薄膜サーミスタ素子と
一対の板状金属リード線とから構成され、前記薄膜サー
ミスタ素子は平板状アルミナ基板と、前記平板状アルミ
ナ基板に設けられた一対の貫通口と、前記平板状アルミ
ナ基板の一方の表面と他の表面とを電気的に連結して、
前記貫通口を貫通して配置された一対の導電性部材と、
前記平板状アルミナ基板の前記一方の表面に前記貫通口
を含んで配置された一対の電極膜と、前記一対の電極膜
に積層して配置された感温抵抗体膜を主体として構成さ
れ、他方、前記一対の板状金属リード線は前記薄膜サー
ミスタ素子の前記平板状アルミナ基板の前記他の表面で
前記一対の貫通口と対向するように配置され、前記一対
の導電性部材と前記一対の板状金属リード線がそれぞれ
一対の導電性固着材で接続され、前記一対の板状金属リ
ード線を含み前記薄膜サーミスタ素子の周囲を硝子焼結
体で被覆するよう構成したものである。[Means for Solving the Problems] In order to solve the above problems, a thin film thermistor of the present invention is composed of a thin film thermistor element and a pair of plate-shaped metal lead wires, and the thin film thermistor element has a flat alumina substrate and a pair of plate-shaped metal lead wires. , electrically connecting a pair of through holes provided in the flat alumina substrate and one surface and the other surface of the flat alumina substrate,
a pair of conductive members disposed through the through hole;
The flat alumina substrate is mainly composed of a pair of electrode films disposed including the through hole on the one surface thereof, and a temperature sensitive resistor film laminated on the pair of electrode films, and the other , the pair of plate metal lead wires are arranged on the other surface of the flat alumina substrate of the thin film thermistor element to face the pair of through holes, and the pair of conductive members and the pair of plates The thin-film thermistor element is covered with a glass sintered body, including the pair of plate-shaped metal lead wires, each connected by a pair of conductive adhesives, and surrounding the thin film thermistor element.
【0006】[0006]
【作用】この構成により、一対の導電性部材と一対の導
電性固着材が従来の一対の内部リード線に代って、貫通
口用導電性ペーストと接続用導電性ペーストの焼成によ
り形成されるので、従来の溶接作業は不要になる。[Operation] With this configuration, a pair of conductive members and a pair of conductive fixing materials are formed by firing the conductive paste for the through hole and the conductive paste for the connection instead of the conventional pair of internal lead wires. Therefore, conventional welding work is no longer necessary.
【0007】また、一対の板状金属リード線を含み薄膜
サーミスタ素子の周囲を硝子焼結体で被覆するので、一
対の板状金属リード線の間の絶縁距離は薄膜サーミスタ
素子の形状に依存しなくなり、絶縁距離も実質的に長く
できる。Furthermore, since the thin film thermistor element including the pair of plate metal lead wires is covered with a glass sintered body, the insulation distance between the pair of plate metal lead wires depends on the shape of the thin film thermistor element. Therefore, the insulation distance can be substantially increased.
【0008】[0008]
【実施例】以下に本発明の実施例を図面を参照しながら
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the drawings.
【0009】図1(a)、(b)に本発明の一実施例の
薄膜サーミスタの構成を示す。図に示すように平板状ア
ルミナ基板1の対向する位置に一対の貫通口8、8’を
設けた。平板状アルミナ基板1の形状は、幅2mm、長
さ6mm、厚さ0.5mm、また一対の貫通口8、8’
の直径は0.4mmとした。平板状アルミナ基板1の一
方の表面に一対の貫通口8、8’を覆って電極用導電性
ペーストを印刷した後、乾燥・焼成して一対のAu−P
t厚膜電極膜3、3’を形成した。この後、貫通口用導
電性ペーストを貫通口8、8’の内表面上もしくは空間
部に塗布した後、乾燥・焼成して導電性部材9、9’を
形成した。平板状アルミナ基板1の一方の表面と他の表
面とを電気的に接続するように、この一対の厚膜電極膜
3、3’と一対の導電性部材9、9’とは、一対の導電
性部材9、9’の端部で電気的に接続されている。電極
用導電性ペースト、貫通口用導電性ペーストとして、例
えば、Agペースト、Ag−Pdペースト、Au−Pt
ペーストなどが用いられる。FIGS. 1(a) and 1(b) show the structure of a thin film thermistor according to an embodiment of the present invention. As shown in the figure, a pair of through holes 8 and 8' were provided at opposing positions on the flat alumina substrate 1. The flat alumina substrate 1 has a width of 2 mm, a length of 6 mm, a thickness of 0.5 mm, and a pair of through holes 8 and 8'.
The diameter was 0.4 mm. After printing a conductive paste for electrodes on one surface of the flat alumina substrate 1 to cover the pair of through holes 8 and 8', it is dried and fired to form a pair of Au-P.
Thick film electrode films 3 and 3' were formed. Thereafter, a conductive paste for through holes was applied onto the inner surfaces or spaces of the through holes 8, 8', and then dried and fired to form conductive members 9, 9'. The pair of thick film electrode films 3, 3' and the pair of conductive members 9, 9' are a pair of conductive members 9, 9' so as to electrically connect one surface and the other surface of the flat alumina substrate 1. The ends of the sexual members 9, 9' are electrically connected. Examples of conductive paste for electrodes and conductive paste for through holes include Ag paste, Ag-Pd paste, and Au-Pt.
Paste etc. are used.
【0010】この後、スパッタ法により炭化ケイ素(S
iC)感温抵抗体膜2を平板状アルミナ基板1の一方の
表面に形成して、薄膜サーミスタ素子を構成した。この
とき、電極膜用導電性ペーストの焼成温度と貫通口用導
電性ペーストの焼成温度は、同一であることが望ましい
。電極膜用導電性ペーストを印刷・乾燥し、貫通口用導
電性ペーストを印刷・乾燥した後、両者を同時に焼成し
て電極膜3、3’および同時に導電性部材9、9’を同
時に形成できるからである。[0010] After that, silicon carbide (S
iC) A temperature sensitive resistor film 2 was formed on one surface of a flat alumina substrate 1 to constitute a thin film thermistor element. At this time, it is desirable that the firing temperature of the conductive paste for the electrode film and the firing temperature of the conductive paste for the through hole be the same. After printing and drying the conductive paste for the electrode film and printing and drying the conductive paste for the through hole, both can be fired simultaneously to form the electrode films 3, 3' and the conductive members 9, 9' at the same time. It is from.
【0011】ただし、500℃までの耐熱性を必要とす
る場合、電極膜3、3’として、Au−Pt厚膜電極膜
(焼成温度900−1000℃)が優れている。従って
、貫通口用導電性ペーストとしてAu−Ptペーストを
用いて導電性部材9、9’を形成してもよいが、Au−
Ptペーストは高価格であるので、好ましくない。この
場合、貫通口用ペーストとして、Au−Ptペーストの
焼成温度よりも低い焼成温度(800−900℃)のA
g−Pdペーストが好ましい。このAg−Pdペースト
は工業的に大量に使用されているので、低価格であるの
みならず、焼成温度がAu−Ptペーストの焼成温度よ
りも低いので、Au−Ptペーストを焼成した後、Ag
−Pdペーストを焼成するとき、Au−Pt電極膜が熱
的に凝集しないという利点もある。However, when heat resistance up to 500° C. is required, an Au-Pt thick film electrode film (firing temperature 900-1000° C.) is excellent as the electrode films 3, 3'. Therefore, although the conductive members 9 and 9' may be formed using Au-Pt paste as the conductive paste for the through-hole,
Pt paste is not preferred because it is expensive. In this case, as the through-hole paste, A
g-Pd paste is preferred. Since this Ag-Pd paste is used in large quantities industrially, it is not only low-priced, but also has a firing temperature lower than that of Au-Pt paste, so after firing the Au-Pt paste, Ag-Pd paste is
- There is also the advantage that the Au--Pt electrode film does not thermally aggregate when firing the Pd paste.
【0012】このようにして薄膜サーミスタ素子を形成
した後、平板状アルミナ基板1の他の表面で一対の貫通
口8、8’に形成された導電性部材9、9’と接触する
よう一対の接続用導電性ペーストを塗布した。この後、
一対の板状金属リード線10、10’を接続用導電性ペ
ーストに密着した後、乾燥・焼成して導電性固着材11
、11’を形成した。この接続用導電性ペーストとして
、電極膜用導電性ペーストと同種のペーストが用いられ
る。このとき、図2に示すように、平板状アルミナ基板
1の他の表面に一対の貫通口8、8’を覆って一対の補
助電極膜12、12’を形成し、この補助電極膜12、
12’が導電性部材9、9’と接続されることが好まし
い。補助電極膜12、12’は、貫通口8、8’(直径
0.5mm程度)の面積に比べ、1−2mm角の大きな
面積で形成でき、また、補助電極膜12、12’と導電
性部材9、9’は接続されているので、接続用導電性ペ
ーストの塗布が容易になる。After forming the thin film thermistor element in this manner, a pair of conductive members 9, 9' formed in the pair of through holes 8, 8' are formed on the other surface of the flat alumina substrate 1. A conductive paste for connection was applied. After this,
After a pair of plate-shaped metal lead wires 10 and 10' are closely attached to the conductive paste for connection, the conductive adhesive material 11 is dried and fired.
, 11' were formed. As this conductive paste for connection, a paste of the same type as the conductive paste for electrode film is used. At this time, as shown in FIG. 2, a pair of auxiliary electrode films 12, 12' are formed on the other surface of the flat alumina substrate 1, covering the pair of through holes 8, 8'.
12' is preferably connected to the conductive members 9, 9'. The auxiliary electrode films 12, 12' can be formed with a larger area of 1-2 mm square than the area of the through holes 8, 8' (about 0.5 mm in diameter), and are conductive. Since the members 9 and 9' are connected, it becomes easy to apply the conductive paste for connection.
【0013】この後、一対の板状金属リード線10、1
0’と平板状アルミナ基板1の周囲の硝子ペーストで被
覆した後、乾燥・焼成して硝子焼結体13を形成した。
このとき、接続用導電ペーストの焼成温度と硝子ペース
トの焼成温度は同一であることが望ましい。一対の板状
金属リード線10、10’を接続用導電性ペーストに密
着した後乾燥し、つぎに硝子ペーストを被覆・乾燥した
後、両者を同時に焼成して接着性導電性焼結体11、1
1’と硝子焼結体13を同時に形成できる。特に、両者
の焼成温度は700℃以下であることが望ましい。この
焼成温度以下であれば、焼成工程によるSiC感温抵抗
体膜2の抵抗値変化が±(1−2)%以下に押さえるこ
とができる。After this, a pair of plate metal lead wires 10, 1
0' and the surroundings of the flat alumina substrate 1 were covered with glass paste, and then dried and fired to form a glass sintered body 13. At this time, it is desirable that the firing temperature of the electrically conductive paste for connection and the firing temperature of the glass paste be the same. A pair of plate-shaped metal lead wires 10, 10' are adhered to a conductive paste for connection and then dried, and then coated with glass paste and dried, and both are fired simultaneously to form an adhesive conductive sintered body 11, 1
1' and the glass sintered body 13 can be formed simultaneously. In particular, it is desirable that the firing temperature for both is 700°C or lower. If the firing temperature is lower than this, the change in the resistance value of the SiC temperature-sensitive resistor film 2 due to the firing process can be suppressed to ±(1-2)% or less.
【0014】一対の板状金属リード線10、10’は、
幅1.2mm、厚さ0.3mm程度のFe−Cr系合金
板が、従来の外部リード線に代って用いられる。この合
金は耐熱性に優れるのみならず、熱膨張係数が小さく、
アルミナ基板1と同程度の熱膨張係数を有する硝子焼結
体12で被覆したときでもクラックを発生しない。The pair of plate metal lead wires 10, 10' are as follows:
A Fe-Cr alloy plate with a width of about 1.2 mm and a thickness of about 0.3 mm is used in place of the conventional external lead wire. This alloy not only has excellent heat resistance, but also has a small coefficient of thermal expansion.
Even when covered with a glass sintered body 12 having a coefficient of thermal expansion comparable to that of the alumina substrate 1, no cracks occur.
【0015】このようにして構成された本発明の薄膜サ
ーミスタでは、従来の一対の内部リード線24、24’
に代って、一対の導電性部材9、9’と導電性固着材1
1、11’が用いられる。従って、本発明の薄膜サーミ
スタでは、溶接作業を全く必要としない。一対の導電性
部材9、9’と一対の板状金属リード線10、10’を
接続する一対の導電性固着材11、11’は、塗布工程
、密着工程、乾燥工程、焼成工程など生産性に優れた工
程で形成されるので、接続の所要時間は従来の溶接作業
に比べ1/2〜1/3に短縮できる。In the thin film thermistor of the present invention constructed in this way, the conventional pair of internal lead wires 24, 24'
Instead, a pair of conductive members 9, 9' and a conductive fixing material 1
1, 11' are used. Therefore, the thin film thermistor of the present invention does not require any welding work. A pair of conductive adhesive materials 11, 11' connecting a pair of conductive members 9, 9' and a pair of plate-shaped metal lead wires 10, 10' are used to improve productivity such as coating process, adhesion process, drying process, baking process, etc. Since it is formed using an excellent process, the time required for connection can be reduced to 1/2 to 1/3 compared to conventional welding work.
【0016】薄膜サーミスタを調理器の温度センサとし
て用いる場合、調理庫内は食品加熱時に多くの水蒸気が
発生するので、水蒸気の過飽和状態になる。この結果、
薄膜サーミスタの外表面に多くの結露水が付着する。し
かし、本発明の薄膜サーミスタは、一対の板状金属リー
ド線10、10’を覆って硝子焼結体13が形成される
ので、従来の薄膜サーミスタに比べ一対の板状リード線
10、10’間の絶縁距離を長くできる。このため、食
品加熱時に発生する結露の影響を低減できる。When a thin film thermistor is used as a temperature sensor for a cooking appliance, a large amount of water vapor is generated in the cooking chamber when food is heated, resulting in a supersaturated state of water vapor. As a result,
A lot of condensed water adheres to the outer surface of the thin film thermistor. However, in the thin film thermistor of the present invention, since the glass sintered body 13 is formed covering the pair of plate-shaped metal lead wires 10, 10', compared to the conventional thin film thermistor, the pair of plate-shaped lead wires 10, 10' The insulation distance between the two can be increased. Therefore, the influence of dew condensation that occurs during food heating can be reduced.
【0017】[0017]
【発明の効果】以上の実施例の説明からも明らかなよう
に本発明によれば下記の効果が得られる。Effects of the Invention As is clear from the description of the embodiments above, according to the present invention, the following effects can be obtained.
【0018】(1)従来の一対の内部リード線に代わり
、一対の導電性部材と一対の導電性固着材を用いている
ので、溶接作業を全く必要としない。(1) Since a pair of conductive members and a pair of conductive fixing materials are used in place of the conventional pair of internal lead wires, no welding work is required.
【0019】(2)一対の導電性部材と導電性固着材は
、塗布工程、密着工程、乾燥工程、焼成工程など生産性
に優れた工程のみで形成されるので、接続に要する時間
は従来の溶接作業に比べ1/2〜1/3に短縮できる。(2) Since the pair of conductive members and the conductive adhesive are formed only through highly productive processes such as coating, adhesion, drying, and firing, the time required for connection is shorter than that of conventional methods. Compared to welding work, the time can be reduced to 1/2 to 1/3.
【0020】(3)一対の板状金属リード線を覆って硝
子焼結体が形成されるので、従来の薄膜サーミスタに比
べ一対の板状リード線間の絶縁距離を長くできる。この
ため、食品加熱に発生する結露による絶縁低下を低減で
きる。(3) Since the glass sintered body is formed to cover the pair of plate-shaped metal lead wires, the insulation distance between the pair of plate-shaped lead wires can be increased compared to conventional thin film thermistors. Therefore, it is possible to reduce insulation deterioration due to dew condensation that occurs during food heating.
【図1】(a)は本発明の第1の実施例の薄膜サーミス
タの一部破断分解斜視図
(b)は同断面図FIG. 1(a) is a partially cutaway exploded perspective view of a thin film thermistor according to a first embodiment of the present invention; FIG. 1(b) is a sectional view of the same;
【図2】本発明の別の実施例の薄膜サーミスタの断面図
FIG. 2 is a cross-sectional view of a thin film thermistor according to another embodiment of the present invention.
【図3】従来の薄膜サーミスタの断面図[Figure 3] Cross-sectional view of a conventional thin film thermistor
1 アルミナ基板 3、3’ 電極膜 8、8’ 貫通口 9、9’ 導電性部材 11、11’ 接着性導電性焼結体 12 補助電極膜 13 硝子焼結体 1 Alumina substrate 3, 3’ Electrode film 8, 8' through hole 9, 9' Conductive member 11, 11' Adhesive conductive sintered body 12 Auxiliary electrode film 13 Glass sintered body
Claims (8)
ド線とを備え、前記薄膜サーミスタ素子は平板状アルミ
ナ基板と、前記平板状アルミナ基板に設けられた一対の
貫通口と、前記平板状アルミナ基板の一方の表面から他
の表面にわたり電気的に導通して、前記貫通口を貫通し
て配置された一対の導電性部材と、前記平体状アルミナ
基板の前記一方の表面に前記貫通口を含んで配置された
一対の電極膜と、前記一対の電極膜に積層して配置され
た感温抵抗体膜とを備え、他方、前記一対の板状金属リ
ード線は前記薄膜サーミスタ素子の前記平板状アルミナ
基板の他の表面で前記一対の貫通口と対向するように配
置され、前記一対の導電性部材と前記一対の板状金属リ
ード線がそれぞれ一対の導電性固着材で接続され、前記
一対の板状金属リード線を含み前記薄膜サーミスタ素子
の周囲を硝子焼結体で被覆した薄膜サーミスタ。1. A thin-film thermistor element and a pair of plate-shaped metal lead wires, the thin-film thermistor element including a flat alumina substrate, a pair of through holes provided in the flat alumina substrate, and a pair of plate-shaped metal lead wires. a pair of conductive members that are electrically conductive from one surface of the substrate to the other surface and are disposed through the through hole; and the through hole is provided on the one surface of the flat alumina substrate. and a temperature-sensitive resistor film disposed in a layered manner on the pair of electrode films, and the pair of plate-shaped metal lead wires are connected to the flat plate of the thin film thermistor element. The pair of conductive members and the pair of plate-shaped metal lead wires are connected to each other by a pair of conductive adhesives, and the pair of conductive members and the pair of plate-shaped metal lead wires are respectively connected to A thin film thermistor comprising a plate-shaped metal lead wire and a sintered glass body surrounding the thin film thermistor element.
通口を含んで一対の補助電極膜を配置し、前記一対の補
助電極膜と一対の導電性部材が接続された請求項1記載
の薄膜サーミスタ。2. A pair of auxiliary electrode films including a pair of through holes are disposed on the other surface of the flat alumina substrate, and the pair of auxiliary electrode films and the pair of conductive members are connected. thin film thermistor.
構成された請求項1記載の薄膜サーミスタ。3. The thin film thermistor according to claim 1, wherein the pair of plate-shaped metal lead wires are made of an iron-chromium alloy.
貫通口を含んで一対の電極用導電性ペーストを印刷した
後乾燥・焼成して一対の電極膜を形成する工程と、一対
の貫通口の内表面上もしくは一対の貫通口の空間部に一
対の貫通口用導電性ペーストを塗布した後乾燥・焼成し
て一対の導電性部材を形成する工程と、炭化セイ素膜を
スパッタ法で形成する工程と、前記平板状アルミナ基板
の他の表面で前記一対の貫通口に形成された前記一対の
導電性部材と接触して一対の接続用導電性ペーストを塗
布する工程と、一対の板状金属リード線を前記一対の接
続用導電性ペーストに密着した後乾燥・焼成して接着性
導電性焼結体を形成する工程と、前記一対の板状金属リ
ード線を含み前記平板状アルミナ基板の周囲を硝子ペー
ストで被覆した後乾燥・焼成して硝子焼結体を形成する
工程とを主体とする薄膜サーミスタの製造方法。4. A step of printing a pair of conductive paste for electrodes including a pair of through holes on one surface of a flat alumina substrate, and then drying and baking to form a pair of electrode films; A step of applying a pair of conductive paste for the through holes on the inner surface of the mouth or the space between the pair of through holes, and then drying and firing it to form a pair of conductive members, and a process of forming a silicon carbide film by sputtering. a step of applying a pair of connecting conductive pastes in contact with the pair of conductive members formed in the pair of through holes on the other surface of the flat alumina substrate; forming an adhesive conductive sintered body by adhering the shaped metal lead wires to the pair of connection conductive pastes and then drying and firing them; and the flat alumina substrate including the pair of plate-shaped metal lead wires. A method for producing a thin film thermistor, which mainly includes the steps of coating the periphery of the glass paste with glass paste, drying and firing it to form a glass sintered body.
用導電性ペーストの焼成温度が同一で、電極用導電性ペ
ーストを塗布・乾燥し、貫通口用ペーストを塗布・乾燥
した後、電極用導電性ペーストと貫通口用ペーストを同
時に焼成して電極膜と導電性部材を同時に形成する請求
項4記載の薄膜サーミスタの製造方法。5. The firing temperature of the conductive paste for electrodes and the conductive paste for through holes are the same, and after applying and drying the conductive paste for electrodes and applying and drying the paste for through holes, 5. The method of manufacturing a thin film thermistor according to claim 4, wherein the conductive paste for the through hole and the paste for the through hole are simultaneously fired to form the electrode film and the conductive member at the same time.
用導電性ペーストの焼成温度よりも高い請求項4記載の
薄膜サーミスタの製造方法。6. The method for manufacturing a thin film thermistor according to claim 4, wherein the firing temperature of the conductive paste for electrodes is higher than the firing temperature of the conductive paste for through holes.
ーストの焼成温度が同一で、一対の板状金属リード線を
一対の接続用導電性ペーストに密着した後乾燥し、硝子
ペーストを被覆・乾燥した後、両者を同時に焼成して導
電性固着材と硝子焼結体を同時に形成する請求項4記載
の薄膜サーミスタの製造方法。7. The firing temperature of the conductive paste for connection is the same as the firing temperature of the glass paste, and the pair of plate-shaped metal lead wires are closely attached to the pair of conductive paste for connection and then dried, and the glass paste is coated. 5. The method of manufacturing a thin film thermistor according to claim 4, wherein after drying, the conductive fixing material and the glass sintered body are simultaneously formed by firing both.
成温度が700℃以下である請求項7記載の薄膜サーミ
スタの製造方法。8. The method for manufacturing a thin film thermistor according to claim 7, wherein the firing temperature of the conductive fixing material and the firing temperature of the glass sintered body are 700° C. or less.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3058648A JP2701565B2 (en) | 1991-03-22 | 1991-03-22 | Thin film thermistor and method of manufacturing the same |
| DE69117374T DE69117374T2 (en) | 1990-07-25 | 1991-07-23 | SiC thin film thermistor and method and manufacturing process. |
| AU81292/91A AU627663B2 (en) | 1990-07-25 | 1991-07-23 | Sic thin-film thermistor |
| US07/734,691 US5216404A (en) | 1990-07-25 | 1991-07-23 | Sic thin-film thermistor |
| EP91112296A EP0468429B1 (en) | 1990-07-25 | 1991-07-23 | SiC thin-film thermistor and method of producing it. |
| CA002047639A CA2047639C (en) | 1990-07-25 | 1991-07-23 | Sic thin-film thermistor |
| KR1019910012766A KR960011154B1 (en) | 1990-07-25 | 1991-07-25 | SiC thin film thermistor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3058648A JP2701565B2 (en) | 1991-03-22 | 1991-03-22 | Thin film thermistor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04293203A true JPH04293203A (en) | 1992-10-16 |
| JP2701565B2 JP2701565B2 (en) | 1998-01-21 |
Family
ID=13090404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3058648A Expired - Lifetime JP2701565B2 (en) | 1990-07-25 | 1991-03-22 | Thin film thermistor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2701565B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013538462A (en) * | 2010-09-13 | 2013-10-10 | ピーエスティ・センサーズ・(プロプライエタリー)・リミテッド | Printed temperature sensor |
| JP2023161389A (en) * | 2022-04-25 | 2023-11-07 | 直文 蕨 | Non-contact type temperature sensor |
-
1991
- 1991-03-22 JP JP3058648A patent/JP2701565B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013538462A (en) * | 2010-09-13 | 2013-10-10 | ピーエスティ・センサーズ・(プロプライエタリー)・リミテッド | Printed temperature sensor |
| JP2023161389A (en) * | 2022-04-25 | 2023-11-07 | 直文 蕨 | Non-contact type temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2701565B2 (en) | 1998-01-21 |
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