JPH04293571A - Rotation processing apparatus - Google Patents

Rotation processing apparatus

Info

Publication number
JPH04293571A
JPH04293571A JP3058600A JP5860091A JPH04293571A JP H04293571 A JPH04293571 A JP H04293571A JP 3058600 A JP3058600 A JP 3058600A JP 5860091 A JP5860091 A JP 5860091A JP H04293571 A JPH04293571 A JP H04293571A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
substrate holder
substrate
insulating material
heat insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3058600A
Other languages
Japanese (ja)
Other versions
JP2975140B2 (en
Inventor
Haruo Iwazu
春生 岩津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP3058600A priority Critical patent/JP2975140B2/en
Publication of JPH04293571A publication Critical patent/JPH04293571A/en
Application granted granted Critical
Publication of JP2975140B2 publication Critical patent/JP2975140B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)

Abstract

PURPOSE:To provide the title apparatus capable of executing uniform processing as compared with conventional processing. CONSTITUTION:A heat insulating material 3 formed into a plate shape is provided to the contact part of the upper surface of a substrate holding part 2 with a semiconductor wafer 1. A flat plate-shaped member 4 having a plurality of fins 4a for accelerating heat exchange concentrically formed thereto is mounted on the under surface of the substrate holding part 2. The substrate holding part 2 is connected to a rotary motor 6 through a connection member 5 composed of a heat insulating material.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】[発明の目的][Object of the invention]

【0002】0002

【産業上の利用分野】本発明は、回転処理装置に関する
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotary processing apparatus.

【0003】0003

【従来の技術】一般に、半導体デバイスの微細な回路パ
ターンは、フォトレジストを用いたフォトリソグラフィ
技術によって、半導体ウエハ等の基板上に形成されるが
、このような半導体ウエハ等の基板にフォトレジスト液
を塗布し、均一な膜厚のフォトレジスト膜を形成する回
転処理装置として、従来から回転塗布装置いわゆるスピ
ンナーが広く用いられている。
[Prior Art] Generally, fine circuit patterns for semiconductor devices are formed on substrates such as semiconductor wafers by photolithography technology using photoresists. Conventionally, a rotary coating device, a so-called spinner, has been widely used as a rotary processing device for coating a photoresist film with a uniform thickness.

【0004】すなわち、このような回転塗布装置は、例
えば真空チャック等により被塗布基板例えば半導体ウエ
ハを保持する基板保持部と、この基板保持部とともに半
導体ウエハを回転させる駆動機構とを備えており、半導
体ウエハ上面のほぼ中央部に供給したフォトレジスト液
を、半導体ウエハを高速回転させることにより、遠心力
で拡散させ、半導体ウエハ全面に、ほぼ均一な膜厚のフ
ォトレジスト膜を形成する。
That is, such a rotary coating apparatus includes a substrate holder that holds a substrate to be coated, such as a semiconductor wafer, using a vacuum chuck, for example, and a drive mechanism that rotates the semiconductor wafer together with the substrate holder. By rotating the semiconductor wafer at high speed, the photoresist solution supplied to approximately the center of the upper surface of the semiconductor wafer is diffused by centrifugal force, thereby forming a photoresist film of approximately uniform thickness over the entire surface of the semiconductor wafer.

【0005】このような回転塗布装置では、従来から、
フォトレジスト膜の膜厚をさらに均一化するための努力
がなされており、例えば特開昭63−110637 号
公報等では、回転駆動機構のモータの熱が真空チャック
(基板保持部)上の半導体ウエハに伝わらないようにし
て温度上昇に伴う膜厚変化が発生しないように、真空チ
ャックと回転駆動機構との間に断熱材を配置した回転塗
布装置が提案されている。
[0005] Conventionally, in such a rotary coating device,
Efforts have been made to make the thickness of the photoresist film more uniform. For example, in Japanese Patent Laid-Open No. 63-110637, heat from the motor of the rotation drive mechanism is transferred to the semiconductor wafer on the vacuum chuck (substrate holder). A rotary coating apparatus has been proposed in which a heat insulating material is disposed between the vacuum chuck and the rotary drive mechanism in order to prevent the film thickness from changing due to temperature rise.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、近年半
導体デバイスは急速に高集積化される傾向にあり、その
回路パターンはますます微細化される傾向にある。この
ため半導体デバイスの各製造工程では、さらに処理精度
を向上させることが要求されている。したがって回転塗
布装置においては、例えば温度管理を十分に行いさらに
均一な膜厚で塗布処理を実施することのできる装置の開
発が望まれていた。
[Problems to be Solved by the Invention] However, in recent years, semiconductor devices have been rapidly becoming highly integrated, and their circuit patterns have become increasingly finer. For this reason, it is required to further improve processing precision in each manufacturing process of semiconductor devices. Therefore, it has been desired to develop a rotary coating apparatus that can perform a coating process with a uniform film thickness by controlling the temperature sufficiently, for example.

【0007】本発明は、かかる従来の事情に対処してな
されたもので、従来に較べて均一な処理を実施すること
のできる回転処理装置を提供しようとするものである。
[0007] The present invention has been made in response to such conventional circumstances, and aims to provide a rotary processing apparatus that can perform processing more uniformly than in the past.

【0008】[発明の構成][Configuration of the invention]

【0009】[0009]

【課題を解決するための手段】すなわち、本発明の回転
処理装置は、被処理基板を保持する基板保持部と、この
基板保持部とともに前記被処理基板を回転させる駆動機
構とを具備した回転処理装置において、前記基板保持部
の前記被処理基板との接触部の少なくとも一部に断熱材
を配置したことを特徴とする。
[Means for Solving the Problems] That is, the rotational processing apparatus of the present invention provides a rotational processing apparatus that includes a substrate holding section that holds a substrate to be processed, and a drive mechanism that rotates the substrate to be processed together with the substrate holding section. The apparatus is characterized in that a heat insulating material is disposed at at least a portion of the contact portion of the substrate holder with the substrate to be processed.

【0010】0010

【作  用】本発明者等が詳査したところ、回転塗布装
置では、連続的に塗布処理を繰り返すと、半導体ウエハ
等の上に塗布されたフォトレジスト液中の溶媒等が気化
する際の気化熱により、半導体ウエハと接触する基板保
持部が次第に冷却され、この冷却された基板保持部上に
次に塗布処理を行う半導体ウエハが載置されるため、こ
の半導体ウエハが基板保持部と接触することによって冷
却され、基板保持部と接触しない半導体ウエハの周縁部
との間で温度差が生じ、形成されるフォトレジスト膜の
膜厚が不均一になることが判明した。
[Function] According to detailed investigation by the present inventors, in a rotary coating device, when the coating process is repeated continuously, the solvent etc. in the photoresist solution coated on the semiconductor wafer etc. is vaporized. The heat gradually cools the substrate holder that comes into contact with the semiconductor wafer, and the next semiconductor wafer to be coated is placed on the cooled substrate holder, so that this semiconductor wafer comes into contact with the substrate holder. It has been found that this causes a temperature difference between the substrate holder and the peripheral edge of the semiconductor wafer that is not in contact with the substrate holder, resulting in uneven thickness of the photoresist film formed.

【0011】そこで、本発明の回転処理装置は、基板保
持部の被処理基板との接触部の少なくとも一部に断熱材
を配置し、基板保持部が冷却されることを抑制すると共
に、回転駆動機構からの熱影響を受けず、雰囲気温度に
て処理可能にして従来に較べて均一な処理を実施するこ
とができるようにしたものである。
Therefore, in the rotary processing apparatus of the present invention, a heat insulating material is disposed on at least a portion of the contact portion of the substrate holder with the substrate to be processed to suppress cooling of the substrate holder and to prevent rotational drive. This allows processing to be performed at ambient temperature without being affected by heat from the mechanism, and allows for more uniform processing than in the past.

【0012】0012

【実施例】以下、本発明を半導体ウエハにフォトレジス
ト液を塗布する回転塗布装置に適用した一実施例を図面
を参照して説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a spin coating apparatus for coating a semiconductor wafer with a photoresist solution will be described below with reference to the drawings.

【0013】図1に示すように、本実施例の回転塗布装
置には、被処理体である半導体ウエハ1を支持もしくは
真空チャックにより保持する円板状に形成された基板保
持部2が設けられている。この基板保持部2上面の半導
体ウエハ1との接触部には、例えば円板状に形成された
第1の断熱材3(例えばデルリン製)が設けられている
As shown in FIG. 1, the spin coating apparatus of this embodiment is provided with a disk-shaped substrate holder 2 that supports a semiconductor wafer 1, which is an object to be processed, or holds it by a vacuum chuck. ing. A first heat insulating material 3 (made by Delrin, for example) formed in, for example, a disk shape is provided at the contact portion of the upper surface of the substrate holder 2 with the semiconductor wafer 1 .

【0014】また、この基板保持部2の下面には、熱伝
導率が高い部材で形成され周囲の雰囲気との熱交換を促
進し、基板保持部2の温度をほぼ周囲の雰囲気温度と等
しく保つための機構として、断面形状が三角形状で、環
状に形成されたフィン4aが同心的に複数形成されたア
ルミニウム製の円板状部材4が前記断熱材2に密着され
ている。なお、このフィン4aは表面積を増大させて周
囲の空気との接触面積を増やすためのもので、その形状
はどのようなものでも良い。
The lower surface of the substrate holder 2 is made of a material with high thermal conductivity to promote heat exchange with the surrounding atmosphere and keep the temperature of the substrate holder 2 almost equal to the surrounding atmosphere temperature. As a mechanism for this purpose, an aluminum disc-shaped member 4 having a triangular cross-sectional shape and a plurality of annular fins 4a formed concentrically is tightly attached to the heat insulating material 2. The fins 4a are provided to increase the surface area and contact area with the surrounding air, and may have any shape.

【0015】この基板保持部2の下部中央には、第2の
断熱材により円柱状に形成された接合部材5の上端が接
続されており、この接合部材5の下端は、駆動機構の回
転用モータ6の回転シャフト6aに接続されている。な
お、上記基板保持部2、接合部材5、回転用モータ6の
回転シャフト6a等には、真空チャック用の真空排気流
路7が形成されている。前述のように、支持部材2は、
第1の断熱材3、円板状部材4、および第2の断熱材(
接合部材5)が、順に積層構造に形成、取着されている
[0015] The upper end of a joining member 5 formed in a cylindrical shape from a second heat insulating material is connected to the center of the lower part of this substrate holding part 2, and the lower end of this joining member 5 is used for rotation of the drive mechanism. It is connected to the rotating shaft 6a of the motor 6. Incidentally, a vacuum exhaust channel 7 for a vacuum chuck is formed in the substrate holding section 2, the joining member 5, the rotating shaft 6a of the rotating motor 6, and the like. As mentioned above, the support member 2 is
The first heat insulating material 3, the disc-shaped member 4, and the second heat insulating material (
The joining members 5) are sequentially formed and attached in a laminated structure.

【0016】また、基板保持部2の周囲には、この基板
保持部2上に載置された半導体ウエハ1の周囲を囲む如
くカップ8が設けられており、このカップ8によって半
導体ウエハ1上に供給されたフォトレジスト液が回転時
に周囲に飛散することを防止するよう構成されている。
A cup 8 is provided around the substrate holder 2 so as to surround the semiconductor wafer 1 placed on the substrate holder 2. It is configured to prevent the supplied photoresist liquid from scattering around during rotation.

【0017】さらに、基板保持部2の上部には、フォト
レジスト液供給ノズル9が設けられており、このフォト
レジスト液供給ノズル9により、図示しないレジストボ
トル内のフォトレジスト液を所定量ずつ基板保持部2上
の半導体ウエハ1の上面ほぼ中央部に供給できるよう構
成されている。
Furthermore, a photoresist liquid supply nozzle 9 is provided at the upper part of the substrate holding section 2, and this photoresist liquid supply nozzle 9 holds the substrate by a predetermined amount of the photoresist liquid in a resist bottle (not shown). It is configured so that it can be supplied to approximately the center of the upper surface of the semiconductor wafer 1 on the portion 2.

【0018】上記構成のこの実施例の回転塗布装置では
、次のようにして半導体ウエハ1にフォトレジスト液を
塗布し、フォトレジスト膜を形成する。
In the spin coating apparatus of this embodiment having the above configuration, a photoresist solution is applied to the semiconductor wafer 1 to form a photoresist film in the following manner.

【0019】すなわち、まず、例えば自動搬送装置等に
より、基板保持部2の断熱材3上の所定位置に半導体ウ
エハ1を載置し、真空排気流路7を介して図示しない真
空ポンプにより真空排気することにより、この半導体ウ
エハ1を基板保持部2の断熱材3上に吸着保持する。
That is, first, the semiconductor wafer 1 is placed at a predetermined position on the heat insulating material 3 of the substrate holder 2 using, for example, an automatic transfer device, and is evacuated by a vacuum pump (not shown) via the evacuation channel 7. By doing so, this semiconductor wafer 1 is suction-held on the heat insulating material 3 of the substrate holding section 2.

【0020】次に、フォトレジスト液供給ノズル9から
、この基板保持部2上の半導体ウエハ1のほぼ中央部に
所定量のフォトレジスト液を供給し、この後回転用モー
タ6によって半導体ウエハ1を高速回転させることによ
り、遠心力でフォトレジスト液を拡散させ、半導体ウエ
ハ1全面に均一にフォトレジスト液を塗布する。
Next, a predetermined amount of photoresist liquid is supplied from the photoresist liquid supply nozzle 9 to the approximate center of the semiconductor wafer 1 on the substrate holder 2, and then the semiconductor wafer 1 is rotated by the rotation motor 6. By rotating at high speed, the photoresist solution is spread by centrifugal force, and the entire surface of the semiconductor wafer 1 is uniformly coated with the photoresist solution.

【0021】この時、例えばフォトレジスト液中の溶媒
等が気化することにより、半導体ウエハ1の温度が若干
低下するが、半導体ウエハ1と基板保持部2との間には
、断熱材3が設けられているので、たとえ連続的に多数
枚の半導体ウエハ1の塗布処理を実施したとしても、基
板保持部2の円板状部材4が半導体ウエハによって冷却
されることはない。したがって、次に基板保持部2上に
載置される半導体ウエハ1が基板支持部材2によって冷
却されることもない。
At this time, for example, the temperature of the semiconductor wafer 1 decreases slightly due to the vaporization of the solvent in the photoresist solution, but a heat insulating material 3 is provided between the semiconductor wafer 1 and the substrate holder 2 Therefore, even if a large number of semiconductor wafers 1 are coated continuously, the disk-shaped member 4 of the substrate holder 2 will not be cooled by the semiconductor wafers. Therefore, the semiconductor wafer 1 placed on the substrate holder 2 next will not be cooled by the substrate support member 2.

【0022】なお、例えば基板保持部2上に断熱材3が
設けられておらず、基板保持部2が冷却されてしまうと
、次に基板保持部2上に載置される半導体ウエハ1は、
基板保持部2との接触部から冷却されることになる。こ
のため、被接触部すなわち半導体ウエハ1の周縁部と接
触部すなわち半導体ウエハ1の中央部との間で温度が不
均一となり、半導体ウエハ1上に形成されるフォトレジ
スト膜の膜厚が不均一となる。
Note that, for example, if the heat insulating material 3 is not provided on the substrate holder 2 and the substrate holder 2 is cooled, the semiconductor wafer 1 to be placed next on the substrate holder 2 will be
Cooling occurs from the contact portion with the substrate holder 2. For this reason, the temperature becomes uneven between the contacted area, that is, the peripheral edge of the semiconductor wafer 1, and the contact area, that is, the center area of the semiconductor wafer 1, and the thickness of the photoresist film formed on the semiconductor wafer 1 becomes uneven. becomes.

【0023】これに対して、本実施例の回転塗布装置に
よれば、半導体ウエハ1にこのような温度の不均一状態
が生じないため、均一な膜厚のフォトレジスト膜を形成
することができる。
On the other hand, according to the spin coating apparatus of this embodiment, such a non-uniform temperature condition does not occur on the semiconductor wafer 1, so that a photoresist film with a uniform thickness can be formed. .

【0024】また、本実施例の回転塗布装置では、回転
用モータ6と基板保持部2との間に断熱材から構成され
た接合部材5が設けられているので、回転用モータ6の
熱が基板保持部2に伝わることを抑制することができ、
さらに、基板保持部2の下面の円板状2部材4に周囲の
雰囲気との熱交換を促進するためのフィン4aが設けら
れているので、基板保持部2の温度をほぼ周囲の雰囲気
温度(例えば23℃)と同等に保つことができ、さらに
均一な膜厚のフォトレジスト膜を形成することができる
。 この場合、基板保持部2はほぼ周囲の雰囲気温度に保持
されるので、例えば基板保持部2にロードする前の半導
体ウエハ1およびフォトレジスト液供給ノズル9から供
給されるレジストボトル内のフォトレジスト液の温度は
、周囲の雰囲気温度と等しくなるよう温度調節すること
が好ましい。
Furthermore, in the rotary coating apparatus of this embodiment, since the joining member 5 made of a heat insulating material is provided between the rotary motor 6 and the substrate holder 2, the heat of the rotary motor 6 is dissipated. It is possible to suppress transmission to the substrate holding part 2,
Furthermore, since the disk-shaped two members 4 on the lower surface of the substrate holding section 2 are provided with fins 4a for promoting heat exchange with the surrounding atmosphere, the temperature of the substrate holding section 2 can be adjusted to approximately the surrounding atmospheric temperature. For example, the temperature can be maintained at the same temperature as 23° C.), and a photoresist film with a more uniform thickness can be formed. In this case, since the substrate holder 2 is maintained at approximately the ambient temperature, for example, the semiconductor wafer 1 and the photoresist liquid in the resist bottle supplied from the photoresist liquid supply nozzle 9 before being loaded onto the substrate holder 2 are Preferably, the temperature is adjusted to be equal to the ambient atmospheric temperature.

【0025】なお、本発明は、基板保持部2上の半導体
ウエハ1を回転させて、現像液の振り切り、乾燥等を行
う現像装置にも適用することができる。この場合も、半
導体ウエハ1面の温度は均一になるため、均一な現像処
理が可能となる。また、現像装置の場合、現像液ボトル
内の現像液の温度を測定し、この現像液温度に応じて現
像時間を調節するよう構成することにより、現像液の温
度調整を行わなくても均一な現像処理を実施することが
できる。
The present invention can also be applied to a developing device that rotates the semiconductor wafer 1 on the substrate holder 2 to shake off the developer and dry it. In this case as well, since the temperature of one surface of the semiconductor wafer becomes uniform, uniform development processing becomes possible. In addition, in the case of a developing device, the temperature of the developer in the developer bottle is measured and the developing time is adjusted according to the temperature of the developer, so that uniform development can be achieved without having to adjust the temperature of the developer. Development processing can be performed.

【0026】[0026]

【発明の効果】以上説明したように、本発明の回転処理
装置によれば、従来に較べて均一な処理を実施すること
ができる。
As explained above, according to the rotary processing apparatus of the present invention, processing can be performed more uniformly than in the past.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例の回転塗布装置の構成を示す
図である。
FIG. 1 is a diagram showing the configuration of a spin coating apparatus according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1  半導体ウエハ 2  基板保持部 3  断熱材 4  円板状部材 5  接合部材 6  回転用モータ 6a  回転シャフト 7  真空排気流路 8  カップ 9  フォトレジスト液供給ノズル 1 Semiconductor wafer 2 Board holding part 3 Insulation material 4 Disc-shaped member 5 Joining member 6 Rotation motor 6a Rotating shaft 7 Vacuum exhaust channel 8 cups 9 Photoresist liquid supply nozzle

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  被処理基板を保持する基板保持部と、
この基板保持部とともに前記被処理基板を回転させる駆
動機構とを具備した回転処理装置において、前記基板保
持部の前記被処理基板との接触部の少なくとも一部に断
熱材を配置したことを特徴とする回転処理装置。
[Claim 1] A substrate holding section that holds a substrate to be processed;
The rotary processing apparatus includes a drive mechanism for rotating the substrate to be processed together with the substrate holder, characterized in that a heat insulating material is disposed on at least a portion of the contact portion of the substrate holder with the substrate to be processed. Rotary processing equipment.
JP3058600A 1991-03-22 1991-03-22 Rotary processing equipment Expired - Lifetime JP2975140B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3058600A JP2975140B2 (en) 1991-03-22 1991-03-22 Rotary processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3058600A JP2975140B2 (en) 1991-03-22 1991-03-22 Rotary processing equipment

Publications (2)

Publication Number Publication Date
JPH04293571A true JPH04293571A (en) 1992-10-19
JP2975140B2 JP2975140B2 (en) 1999-11-10

Family

ID=13089004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3058600A Expired - Lifetime JP2975140B2 (en) 1991-03-22 1991-03-22 Rotary processing equipment

Country Status (1)

Country Link
JP (1) JP2975140B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326386A (en) * 1992-05-15 1993-12-10 Tokyo Ohka Kogyo Co Ltd Spinner device
JP2001212493A (en) * 2000-02-04 2001-08-07 Shibaura Mechatronics Corp Spin processing device
JP2004230209A (en) * 2003-01-28 2004-08-19 Casio Comput Co Ltd Solution ejection device
JP2010021153A (en) * 2009-10-20 2010-01-28 Casio Comput Co Ltd Solution spouting device and solution spouting method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326386A (en) * 1992-05-15 1993-12-10 Tokyo Ohka Kogyo Co Ltd Spinner device
JP2001212493A (en) * 2000-02-04 2001-08-07 Shibaura Mechatronics Corp Spin processing device
JP2004230209A (en) * 2003-01-28 2004-08-19 Casio Comput Co Ltd Solution ejection device
JP2010021153A (en) * 2009-10-20 2010-01-28 Casio Comput Co Ltd Solution spouting device and solution spouting method

Also Published As

Publication number Publication date
JP2975140B2 (en) 1999-11-10

Similar Documents

Publication Publication Date Title
US6773510B2 (en) Substrate processing unit
TWI603377B (en) Coating processing method, computer recording medium, and coating processing device
US6527860B1 (en) Substrate processing apparatus
JPH11260717A (en) Resist coating method and resist coating device
JP2835890B2 (en) Processing equipment
JPH06151295A (en) Method and device for manufacturing semiconductor device
JP2001276715A (en) Coating device and coating method
JPH04293571A (en) Rotation processing apparatus
JP4570001B2 (en) Liquid supply device
JPH0992615A (en) Semiconductor wafer cooling device
JP2001307984A (en) Resist coating method and resist coating device
JP2883467B2 (en) Rotary processing equipment
JP2892533B2 (en) Coating method and coating device
JP3588277B2 (en) Substrate development processing method
JP3246890B2 (en) Heat treatment equipment
JP2840182B2 (en) Rotary coating method for substrate and rotary coating apparatus for substrate
US4588379A (en) Configuration for temperature treatment of substrates, in particular semi-conductor crystal wafers
JP3639150B2 (en) Processing equipment
JP2906001B2 (en) Processing equipment
JP3046362B2 (en) Application method
JPS6245378A (en) Coating apparatus
JPH02260415A (en) Conveyance apparatus
JP3623369B2 (en) Semiconductor manufacturing equipment
JP3067177B2 (en) Rotary coating device
JPH01287940A (en) Rotary treatment device

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 19990330

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19990824

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110903

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110903

Year of fee payment: 12