JPH04301317A - insulated wire - Google Patents
insulated wireInfo
- Publication number
- JPH04301317A JPH04301317A JP3067069A JP6706991A JPH04301317A JP H04301317 A JPH04301317 A JP H04301317A JP 3067069 A JP3067069 A JP 3067069A JP 6706991 A JP6706991 A JP 6706991A JP H04301317 A JPH04301317 A JP H04301317A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- based alloy
- layer
- iron
- insulated wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 67
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 37
- 239000000956 alloy Substances 0.000 claims abstract description 37
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 33
- 229910052742 iron Inorganic materials 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- 239000012700 ceramic precursor Substances 0.000 claims abstract description 14
- 239000011162 core material Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 13
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 150000004703 alkoxides Chemical class 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- -1 organic acid salt Chemical class 0.000 claims description 5
- 229920001709 polysilazane Polymers 0.000 claims description 5
- 229920002050 silicone resin Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920003257 polycarbosilane Polymers 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 25
- 239000004020 conductor Substances 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 238000009413 insulation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 150000002902 organometallic compounds Chemical group 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000010942 ceramic carbide Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241001311547 Patina Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000971 Silver steel Inorganic materials 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- NOKUWSXLHXMAOM-UHFFFAOYSA-N hydroxy(phenyl)silicon Chemical class O[Si]C1=CC=CC=C1 NOKUWSXLHXMAOM-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- IKNCGYCHMGNBCP-UHFFFAOYSA-N propan-1-olate Chemical compound CCC[O-] IKNCGYCHMGNBCP-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Insulated Conductors (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】この発明は、高真空機器や高温使
用機器などにおいて配線用電線や巻線用電線等に用いら
れる絶縁電線に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to insulated wires used as wiring wires and winding wires in high-vacuum equipment, high-temperature equipment, and the like.
【0002】0002
【従来の技術】絶縁電線は、加熱設備や火災報知機など
の高温下における安全性が要求される設備に使用される
ことがある。また、絶縁電線は、自動車内の高温度に加
熱される環境下においても用いられる。このような絶縁
電線としては、従来から、導体にポリイミドやフッ素樹
脂等の耐熱性有機樹脂が被覆された絶縁電線が知られて
いる。2. Description of the Related Art Insulated wires are sometimes used in equipment that requires safety under high temperatures, such as heating equipment and fire alarms. Insulated wires are also used in environments that are heated to high temperatures inside automobiles. As such insulated wires, insulated wires in which a conductor is coated with a heat-resistant organic resin such as polyimide or fluororesin have been known.
【0003】高い耐熱性が要求される用途や、高い真空
度が要求される環境下で使用される場合には、有機物被
覆だけでは、耐熱性やガス放出性等の点で不十分である
。そこで、セラミックス製のガイシ管に導体が通された
形式の絶縁電線や、酸化マグネシウムなどの金属酸化物
微粒子がつめられた、ステンレス合金等からなる耐熱合
金製の管に導体が通された形式のMIケーブルなどがそ
のような用途に使用されてきた。[0003] When used in applications that require high heat resistance or in environments that require a high degree of vacuum, organic coating alone is insufficient in terms of heat resistance, gas release properties, etc. Therefore, we have introduced insulated wires in which the conductor is passed through a ceramic insulator tube, and insulated wires in which the conductor is passed through a tube made of a heat-resistant alloy such as a stainless steel alloy filled with fine particles of metal oxide such as magnesium oxide. MI cables and the like have been used for such purposes.
【0004】また、耐熱性とともに可撓性が要求される
絶縁電線としては、ガラス繊維が紡織されたものを絶縁
部材として使用するガラス編組絶縁電線などが挙げられ
る。[0004] Examples of insulated wires that require flexibility as well as heat resistance include glass braided insulated wires that use woven glass fibers as an insulating member.
【0005】さらに、耐熱用途で特開昭55−0437
46号公報およびフジクラ技法(平成元年4月、第76
号、51〜56頁)に開示されるセラミックス化電線が
ある。これは、ニッケルめっき銅や白金、銀、不銹鋼製
の線にシリコン樹脂とセラミックス粉末の混合体よりな
る絶縁層を形成し、シリコン樹脂が熱分解し得る温度以
上に加熱された場合でもシリコン樹脂を分解した後にセ
ラミックス粉末を残存し絶縁を維持するセラミックス化
電線である。[0005] Furthermore, for heat-resistant applications, Japanese Patent Application Laid-open No. 55-0437
Publication No. 46 and Fujikura Technique (April 1989, No. 76
There is a ceramic-coated electric wire disclosed in No., pp. 51-56). This method forms an insulating layer made of a mixture of silicone resin and ceramic powder on wires made of nickel-plated copper, platinum, silver, or stainless steel, so that even if the silicone resin is heated to a temperature higher than that at which it can thermally decompose, the silicone resin will remain intact. This is a ceramic wire that retains ceramic powder after decomposition and maintains insulation.
【0006】[0006]
【発明が解決しようとする課題】上記のような有機樹脂
が被覆された絶縁電線では、絶縁性が保たれ得る最高の
温度は、たかだか300℃程度である。そのため、30
0℃以上の高い温度下において絶縁性の保証が要求され
る用途には、このような有機物絶縁被覆電線を使用する
ことはできない。[Problems to be Solved by the Invention] In an insulated wire coated with an organic resin as described above, the maximum temperature at which insulation can be maintained is about 300°C at most. Therefore, 30
Such an organic insulated electric wire cannot be used in applications where insulation is required to be guaranteed at high temperatures of 0° C. or higher.
【0007】また、セラミックス製のガイシ管を用いて
耐熱性が高められた絶縁電線は、可撓性に乏しい等の欠
点を有する。MIケーブルは耐熱性の合金管と導体によ
って構成されているため、ケーブルの外径が大きくなる
。このため、MIケーブルは、許容する電力量に対して
、相対的に大きな断面を有するケーブルとなる。また、
MIケーブルの外層は耐熱性合金管によって構成されて
いるため、良好な可撓性を有しているが、ボビン等にコ
イル状に巻かれる巻線用電線として用いるためには、耐
熱合金製の管を所定の曲率で曲げる必要がある。
このとき、耐熱合金製の管に施される曲げ加工は困難さ
を伴う。また、MIケーブルをコイル状に巻く場合、導
体に比べて、その外層の管が太いので、巻線密度を向上
させることが困難である。[0007] Furthermore, insulated wires whose heat resistance is improved by using ceramic insulator tubes have drawbacks such as poor flexibility. Since the MI cable is composed of a heat-resistant alloy tube and a conductor, the outer diameter of the cable is large. Therefore, the MI cable has a relatively large cross section with respect to the amount of power it allows. Also,
The outer layer of the MI cable is made of a heat-resistant alloy tube, so it has good flexibility. It is necessary to bend the tube at a certain curvature. At this time, it is difficult to bend the heat-resistant alloy tube. Furthermore, when winding an MI cable into a coil, the outer layer of the cable is thicker than the conductor, so it is difficult to improve the winding density.
【0008】さらに、可撓性とともに耐熱性が備えられ
たガラス編組絶縁電線を用いる場合、用途に応じて所定
の形状に配置するとき、ガラス繊維からガラスの粉塵が
発生するという問題がある。このガラス粉塵は、ガスの
吸着源となりうる。このため、高い真空度が要求される
環境下でガラス編組絶縁電線を用いると、ガラス粉塵に
よって提供されるガス吸着源のために、高い真空度を保
つことは不可能である。Furthermore, when using a glass braided insulated wire that is flexible and heat resistant, there is a problem in that glass dust is generated from the glass fibers when the wire is arranged in a predetermined shape depending on the intended use. This glass dust can become a source of gas adsorption. Therefore, if a glass braided insulated wire is used in an environment that requires a high degree of vacuum, it is impossible to maintain a high degree of vacuum because of the gas adsorption source provided by the glass dust.
【0009】一方、従来から、耐熱性、絶縁性、熱放散
性の良好な絶縁電線として、アルミニウムあるいはアル
ミニウム合金の線材に陽極酸化処理を施した、いわゆる
アルマイト電線が存在する。このアルマイト電線におい
ては、その基材がアルミニウム1種に限定される。耐熱
性を考慮した場合、アルミニウムの融点が660℃であ
るため、自ら耐熱性の上限が規定され、さらに660℃
より低温においても機械的強度の低下のため、500℃
程度が使用の限界である。On the other hand, so-called alumite wires, which are aluminum or aluminum alloy wires subjected to anodizing treatment, have conventionally existed as insulated wires with good heat resistance, insulation properties, and heat dissipation properties. In this alumite electric wire, the base material is limited to one type of aluminum. When considering heat resistance, since the melting point of aluminum is 660℃, the upper limit of heat resistance is defined by itself, and furthermore, the upper limit of heat resistance is 660℃.
500℃ due to the decrease in mechanical strength even at lower temperatures.
The degree of use is the limit of use.
【0010】また、セラミックス化電線においては絶縁
皮膜が粒子状多孔質であり、粉塵を発生しやすく真空中
で使用することは不可能である。[0010] Furthermore, the insulation coating of the ceramic electric wire is porous and tends to generate dust, making it impossible to use it in a vacuum.
【0011】導体として電気伝導性の高さ、半田付けの
容易性、強度およびコストの観点からは、銅または銅合
金が最適である。しかしながら銅は、酸化剤に対して抵
抗力が低く、大気中室温においても酸化されたり、塩基
性炭酸塩の緑青に変化する。さらに高温環境下では、酸
化が進行し、導体として使用が不可能になる。この問題
点を克服するため、従来より、銅の表面にニッケルをめ
っきしたニッケルめっき銅線が使用されている。しかし
ながら、ニッケルめっき銅線は400℃程度の使用では
特に問題がないのであるが、より高温になると銅とニッ
ケルの拡散および合金化のため導電性が低下する。たと
えば、600℃で2000時間後では、導体の導体率は
20%程度低下する。Copper or a copper alloy is most suitable as a conductor from the viewpoints of high electrical conductivity, ease of soldering, strength, and cost. However, copper has low resistance to oxidizing agents and is oxidized even at room temperature in the atmosphere or changes into a basic carbonate patina. Further, in a high temperature environment, oxidation progresses, making it impossible to use it as a conductor. To overcome this problem, nickel-plated copper wire, in which the surface of copper is plated with nickel, has been used. However, although nickel-plated copper wire has no particular problem when used at temperatures of about 400° C., conductivity decreases at higher temperatures due to diffusion and alloying of copper and nickel. For example, after 2000 hours at 600° C., the conductivity of the conductor decreases by about 20%.
【0012】この発明の目的は、このような従来の問題
点を解消し、以下の特性を備えた絶縁電線を提供するこ
とを目的とする。An object of the present invention is to solve these conventional problems and provide an insulated wire having the following characteristics.
【0013】(a) 高温度の環境下において変質が
ない
(b) 可撓性に優れていること
(c) ガラス吸着源を備えていないこと(a) No deterioration in high temperature environments (b) Excellent flexibility (c) No glass adsorption source
【0014
】0014
]
【課題を解決するための手段】この発明に従う絶縁電線
は、銅もしくは銅基合金からなる芯材と、芯材の外表面
に設けられる鉄もしくは鉄基合金層と、鉄もしくは鉄基
合金層の外表面に設けられるニッケルもしくはニッケル
基合金層と、セラミックスの前駆体溶液の加熱処理によ
ってニッケルもしくはニッケル基合金層の外表面に形成
される絶縁性セラミックス層とを備えている。[Means for Solving the Problems] An insulated wire according to the present invention includes a core material made of copper or a copper-based alloy, an iron or iron-based alloy layer provided on the outer surface of the core material, and an iron or iron-based alloy layer provided on the outer surface of the core material. It includes a nickel or nickel-based alloy layer provided on the outer surface, and an insulating ceramic layer formed on the outer surface of the nickel or nickel-based alloy layer by heat treatment of a ceramic precursor solution.
【0015】鉄基合金層としては、不銹鋼等が使用でき
る。この場合、機械加工性に優れるオーステナイト系不
銹鋼が好ましい。[0015] As the iron-based alloy layer, stainless steel or the like can be used. In this case, austenitic stainless steel with excellent machinability is preferred.
【0016】絶縁性セラミックス層としては、シリカ、
アルミナ、ジルコニア、窒化ケイ素、炭化ケイ素、窒化
アルミニウムおよび安定化ジルコニアなどを用いること
ができる。[0016] As the insulating ceramic layer, silica,
Alumina, zirconia, silicon nitride, silicon carbide, aluminum nitride, stabilized zirconia, and the like can be used.
【0017】絶縁性セラミックス層を形成するセラミッ
クスの前駆体としては、金属アルコキシド、金属の有機
酸塩、シリコーン樹脂、ポリシラザン、ポリカルボシラ
ン、またはポリボロシロキサンなどがある。Ceramic precursors for forming the insulating ceramic layer include metal alkoxides, organic acid salts of metals, silicone resins, polysilazane, polycarbosilane, and polyborosiloxane.
【0018】絶縁性セラミックス層の厚みの厚いものが
必要な場合には、セラミックス前駆体溶液中に、セラミ
ックス微粒子を分散させてもよい。If a thick insulating ceramic layer is required, ceramic fine particles may be dispersed in the ceramic precursor solution.
【0019】さらに、高度な可撓性が要求される用途に
は、苛酷な曲げ加工の際にも絶縁性セラミックス層が脱
落しないような高度な密着性が必要となる。このような
絶縁性セラミックス層を形成するには、たとえばニッケ
ルもしくはニッケル基合金層の表面に電気めっきにより
酸化クロム含有層を形成することが好ましい。Furthermore, applications requiring a high degree of flexibility require a high degree of adhesion so that the insulating ceramic layer does not fall off even during severe bending. To form such an insulating ceramic layer, it is preferable to form a chromium oxide-containing layer on the surface of the nickel or nickel-based alloy layer by electroplating, for example.
【0020】図1は、この発明に従う一実施例を示す断
面図である。図1を参照して、銅線の芯材1のまわりに
は鉄もしくは鉄基合金層2が設けられている。鉄もしく
は鉄基合金層2のまわりにはニッケルもしくはニッケル
基合金層3が設けられており、ニッケルもしくはニッケ
ル基合金層3のまわりには絶縁性セラミックス層4が設
けられている。FIG. 1 is a sectional view showing an embodiment according to the present invention. Referring to FIG. 1, an iron or iron-based alloy layer 2 is provided around a core material 1 of a copper wire. A nickel or nickel-based alloy layer 3 is provided around the iron or iron-based alloy layer 2, and an insulating ceramic layer 4 is provided around the nickel or nickel-based alloy layer 3.
【0021】[0021]
【発明の作用効果】この発明では、銅もしくは銅基合金
と、ニッケルもしくはニッケル基合金との間に、鉄もし
くは鉄基合金が設けられている。鉄および鉄基合金は高
温でも銅および銅基合金との拡散が遅く、高温下で長時
間使用しても導体抵抗の増加はわずかである。このため
、鉄もしくは鉄基合金層が、銅もしくは銅基合金とニッ
ケルもしくはニッケル基合金との間で起こる高温での相
互拡散を防止し、導電率の低下を抑制する。According to the present invention, iron or an iron-based alloy is provided between copper or a copper-based alloy and nickel or a nickel-based alloy. Iron and iron-based alloys diffuse slowly with copper and copper-based alloys even at high temperatures, and conductor resistance increases only slightly even when used for long periods of time at high temperatures. Therefore, the iron or iron-based alloy layer prevents mutual diffusion at high temperatures between copper or copper-based alloy and nickel or nickel-based alloy, thereby suppressing a decrease in electrical conductivity.
【0022】また、この発明でニッケルもしくはニッケ
ル基合金層の外表面に設けられる絶縁性セラミックス層
は、セラミックスの前駆体溶液の加熱処理によって形成
されるものであるため、平滑な薄膜であり、可撓性に優
れかつガス吸着性を有していない。この発明によって、
絶縁性セラミックス層を形成するには、たとえばセラミ
ックスの前駆体溶液を塗布し加熱する工程を複数回繰り
返して行なうことができる。絶縁性セラミックスとして
は、種々の材料を用途に応じて選択することができる。In addition, the insulating ceramic layer provided on the outer surface of the nickel or nickel-based alloy layer in the present invention is formed by heat treatment of a ceramic precursor solution, so it is a smooth thin film and is flexible. It has excellent flexibility and does not have gas adsorption properties. With this invention,
To form the insulating ceramic layer, for example, the process of applying and heating a ceramic precursor solution can be repeated multiple times. As the insulating ceramic, various materials can be selected depending on the purpose.
【0023】この発明においては、セラミックス絶縁層
はセラミックスの前駆体溶液を塗布および加熱処理する
ことにより得ることができる。In the present invention, the ceramic insulating layer can be obtained by applying a ceramic precursor solution and subjecting it to heat treatment.
【0024】セラミックス前駆体を含む溶液とは、金属
アルコキシド等の加水分解可能な有機基を有する化合物
の加水分解反応および脱水縮合反応により生成した、ア
ルコキシド基、ヒドロオキシ基、およびメタロキサン結
合を有する金属有機化合物の高分子からなる溶液である
。また、この溶液には、溶媒であるアルコール等の有機
溶剤や、原料の金属アルコキシド、および加水分解反応
に必要な少量の水と触媒が含まれている。A solution containing a ceramic precursor is a metal organic compound having an alkoxide group, a hydroxyl group, and a metalloxane bond, which is produced by a hydrolysis reaction and a dehydration condensation reaction of a compound having a hydrolyzable organic group such as a metal alkoxide. It is a solution consisting of a polymer compound. This solution also contains an organic solvent such as alcohol as a solvent, a metal alkoxide as a raw material, and a small amount of water and a catalyst necessary for the hydrolysis reaction.
【0025】また、セラミックス前駆体を含む溶液には
、金属有機化合物(Metal−organic C
ompounds)を適当な有機溶媒に混合し溶解した
溶液も含まれる。この発明で使用されるものは、この金
属有機化合物を加熱により熱分解し金属酸化物皮膜を形
成するものであるため、大気圧での熱分解温度が金属有
機化合物の沸点より低いものに限定される。たとえば、
SiO2、Al2 O3 、ZrO2 、TiO2 ,
およびMgO等がある。有機酸塩としては、ナフテン酸
、カプリル酸、ステアリン酸、およびオクチル酸との金
属塩が好ましい。また金属アルコキシドとしては、エト
キシド、プロポキシドおよびブトキシド等が用いられる
。[0025] Furthermore, the solution containing the ceramic precursor contains a metal-organic compound (Metal-organic C
It also includes a solution obtained by mixing and dissolving compounds) in a suitable organic solvent. Since the material used in this invention thermally decomposes this metal organic compound by heating to form a metal oxide film, it is limited to those whose thermal decomposition temperature at atmospheric pressure is lower than the boiling point of the metal organic compound. Ru. for example,
SiO2, Al2O3, ZrO2, TiO2,
and MgO. As the organic acid salt, metal salts with naphthenic acid, caprylic acid, stearic acid, and octylic acid are preferred. Further, as the metal alkoxide, ethoxide, propoxide, butoxide, etc. are used.
【0026】有機酸塩熱分解法によって形成される酸化
物絶縁層は、セラミックス化された酸化物である。この
酸化物は、金属酸化物の前駆体溶液の加熱処理において
酸素気流中の雰囲気下で加熱処理によって形成されても
よい。The oxide insulating layer formed by the organic acid salt pyrolysis method is a ceramic oxide. This oxide may be formed by heat treatment of a metal oxide precursor solution in an oxygen stream atmosphere.
【0027】窒化物および炭化物の絶縁性セラミックス
層としては、炭化ケイ素、窒化ケイ素、および窒化アル
ミニウムなどが挙げられる。窒化ケイ素を形成する場合
は、セラミックスの前駆体として、ポリシラザンを使用
でき、窒化アルミニウムの場合は、アルキルアミノアル
ミニウムの重合体を使用することが好ましい。なぜなら
ば、いずれも加熱によりセラミックスに変化する際収縮
率が小さいため、生成するセラミックス皮膜に亀裂等の
欠陥を生じにくいことが判明しているからである。炭化
物絶縁層は、ポリカルボシランもしくはポリボロシロキ
サンの加熱分解法によって形成される。ポリカルボシラ
ンおよびポリボロシロキサンの加熱処理は、アルゴンや
窒素気流中の不活性雰囲気下で行なわれてもよい。この
ような加熱処理により得られる絶縁層は、セラミックス
化された炭化物である。また、大気中で加熱を行なう場
合には、炭化物の一部もしくは大部分が酸化され、炭化
物と酸化物の混合物になってもよい。Examples of the nitride and carbide insulating ceramic layer include silicon carbide, silicon nitride, and aluminum nitride. When forming silicon nitride, polysilazane can be used as a ceramic precursor, and when forming aluminum nitride, it is preferable to use a polymer of alkylaminoaluminum. This is because both have a small shrinkage rate when converted into ceramics by heating, and it has been found that defects such as cracks are less likely to occur in the resulting ceramic film. The carbide insulating layer is formed by thermal decomposition of polycarbosilane or polyborosiloxane. The heat treatment of polycarbosilane and polyborosiloxane may be performed under an inert atmosphere in an argon or nitrogen stream. The insulating layer obtained by such heat treatment is a ceramic carbide. Further, when heating is performed in the atmosphere, part or most of the carbide may be oxidized to become a mixture of carbide and oxide.
【0028】このようにして、セラミックス化された炭
化物の絶縁層は、1000℃以上の高温化においても優
れた耐熱絶縁性を示す。[0028] Thus, the ceramic carbide insulating layer exhibits excellent heat-resistant insulation even at temperatures of 1000°C or higher.
【0029】さらに、高度な可撓性が要求される用途に
は、苛酷な曲げ加工の際にも絶縁性セラミックス層が脱
落しないような強固な密着性が必要となる。このような
場合には、ニッケルもしくはニッケル基合金層のまわり
に電気めっきにより酸化クロム含有層を形成することが
好ましい。Furthermore, applications requiring a high degree of flexibility require strong adhesion to prevent the insulating ceramic layer from falling off even during severe bending. In such a case, it is preferable to form a chromium oxide-containing layer around the nickel or nickel-based alloy layer by electroplating.
【0030】酸化クロム層を電気めっき法を用いて形成
する場合には、クロム酸の水溶液に少量の有機酸を添加
したものが用いられる。一般的に、クロムめっきを行な
う際に使用する電解浴としては、クロム酸、および硫酸
を主体とするサージェント浴が知られているが、この浴
とは以下の点で異なる。すなわち、電解浴中に混合する
鉱酸は、電気めっきの際にめっき表面上に生成する酸化
クロムを溶解する働きがある。このため、光沢状の金属
クロム層がめっきされる。この発明では、この酸化クロ
ムを優先的にめっきする。また、酸化クロムを主体とす
る層の外表面上に金属窒化物の前駆体溶液の加熱処理で
、絶縁性セラミックスの薄膜を形成する。この薄膜の付
着性をより大きくするためには、酸化クロムを主体とす
る層の表面が粗面であることが好ましい。このため、一
般に行なわれる光沢めっきとは、電流密度等において異
なる。光沢めっきでは、処理温度にもよるが、10〜6
0A/dm2 の電流密度が使用されるが、この発明で
は、100〜200A/dm2 の電流密度を使用し、
粗面を得る。When the chromium oxide layer is formed by electroplating, an aqueous solution of chromic acid to which a small amount of an organic acid is added is used. Generally, as an electrolytic bath used when performing chromium plating, a Sargent bath mainly containing chromic acid and sulfuric acid is known, but it differs from this bath in the following points. That is, the mineral acid mixed in the electrolytic bath has the function of dissolving chromium oxide generated on the plating surface during electroplating. For this purpose, a shiny metallic chromium layer is plated. In this invention, this chromium oxide is preferentially plated. Furthermore, a thin film of insulating ceramics is formed on the outer surface of the layer mainly composed of chromium oxide by heat treatment of a metal nitride precursor solution. In order to increase the adhesion of this thin film, it is preferable that the surface of the layer mainly composed of chromium oxide is rough. For this reason, it differs from commonly performed bright plating in terms of current density, etc. For bright plating, it depends on the processing temperature, but 10 to 6
Although a current density of 0 A/dm2 is used, in this invention a current density of 100-200 A/dm2 is used,
Get a rough surface.
【0031】なお、絶縁層の形成には、溶液を使用する
方法が用いられているため、簡単な設備で、かつ高速で
線状の基体にコーティングすることができる。[0031] Since the insulating layer is formed using a method using a solution, the linear substrate can be coated with simple equipment and at high speed.
【0032】[0032]
【実施例】実施例1
無酸素銅の芯材のまわりにオーステナイト系の不銹鋼(
SuS304)層を設け、その外側にニッケル層を設け
た構造の線材を嵌合法により準備した。線径は0.5m
mであり、ニッケル層が25μm、不銹鋼層が10μm
の厚みであった。初期の導電率は78.8%IACSで
あった。[Example] Example 1 Austenitic stainless steel (
A wire rod having a structure in which a SuS304) layer was provided and a nickel layer was provided on the outside thereof was prepared by a fitting method. Wire diameter is 0.5m
m, the nickel layer is 25 μm, and the stainless steel layer is 10 μm.
The thickness was . The initial conductivity was 78.8% IACS.
【0033】窒素気流下で、1,1,1,3,3,3−
ヘキサメチルジシラザン40gと、トリクロロシラン1
5gを混合し、70℃で5時間撹拌した。さらに、16
0℃で蒸留を行ない、副生成物を蒸留し除去した。次に
120℃、5mmHgで真空蒸留することにより、完全
に副生成物を除去し、5gのポリシラザンを得た。ここ
でいう副生成物は、トリメチルクロロシランとオリゴシ
ラザンが主である。ポリシラザンをトルエンで5倍に希
釈し、セラミックス前駆体を含む塗布溶液を得た。Under nitrogen flow, 1,1,1,3,3,3-
40g of hexamethyldisilazane and 11g of trichlorosilane
5 g were mixed and stirred at 70°C for 5 hours. Furthermore, 16
Distillation was carried out at 0°C to distill and remove by-products. Next, by-products were completely removed by vacuum distillation at 120° C. and 5 mmHg to obtain 5 g of polysilazane. The by-products mentioned here are mainly trimethylchlorosilane and oligosilazane. Polysilazane was diluted five times with toluene to obtain a coating solution containing a ceramic precursor.
【0034】この塗布溶液に、上記の嵌合法により作製
した導体を浸漬した。線材を取出し、窒素雰囲気下、温
度700℃で10分間加熱し塗布溶液を乾燥させ表面に
セラミックス層を形成させた。この塗布および加熱の工
程を10回繰返し、絶縁性セラミックス層を形成した。[0034] The conductor produced by the above-mentioned fitting method was immersed in this coating solution. The wire was taken out and heated under a nitrogen atmosphere at a temperature of 700° C. for 10 minutes to dry the coating solution and form a ceramic layer on the surface. This coating and heating process was repeated 10 times to form an insulating ceramic layer.
【0035】このようにして得られた絶縁電線から、長
さ30cmのサンプルを採取した。厚み0.02mmの
白金箔を、約50mmの間隔を隔ててこのサンプルの4
か所に、それぞれ約10mmの長さで巻付けた。導体−
金属箔の間に60Hzの交流電圧を印加したところ50
0Vで絶縁破壊した。また絶縁電線を曲げ加工したとこ
ろ、直径10mmの径に曲げても絶縁性が維持された。A sample with a length of 30 cm was taken from the insulated wire thus obtained. Platinum foil with a thickness of 0.02 mm was placed between four of these samples at intervals of about 50 mm.
It was wrapped around each part to a length of about 10 mm. conductor -
When a 60Hz AC voltage was applied between the metal foils, 50
Dielectric breakdown occurred at 0V. Furthermore, when the insulated wire was bent, the insulation properties were maintained even when the wire was bent to a diameter of 10 mm.
【0036】さらに、この絶縁電線を600℃で200
0時間加熱した後、長さ30cmのサンプルを採取した
。これは、先程と同様に厚さ0.02mmの白金箔を、
約50mmの間隔を隔ててサンプルの4か所に約10m
mの長さ巻付け、導体−金属箔の間に、60Hzの交流
電圧を印加したところ500Vで絶縁破壊した。さらに
、導電率を測定したところ、78.1%IACSと低下
はわずかであった。Furthermore, this insulated wire was heated at 600°C for 200°C.
After heating for 0 hours, samples with a length of 30 cm were taken. This is the same as before, using platinum foil with a thickness of 0.02 mm,
Approximately 10 m at four locations on the sample at intervals of approximately 50 mm.
When an alternating current voltage of 60 Hz was applied between the conductor and the metal foil, the conductor was wound with a length of m, and dielectric breakdown occurred at 500V. Furthermore, when the electrical conductivity was measured, it was found to be 78.1% IACS, which was a slight decrease.
【0037】実施例2
ポリボロジフェニルシロキサン(Polyborodi
phenylsiloxane)(SiPh2 −O−
P2 )n をトルエンに溶解し、40重量%の溶液と
した。
さらに、炭化ケイ素粉末(公称粒径0.50μm)を3
g混合し塗布液とした。実施例1と同様の嵌合法により
作製した線材を、この塗布液に浸積した。塗布液から引
き上げて、温度500℃で10分間加熱した。この塗布
および加熱の工程を5回繰返して、絶縁性セラミックス
層を形成した。Example 2 Polyborodiphenylsiloxane (Polyborodi
phenylsiloxane) (SiPh2 -O-
P2)n was dissolved in toluene to form a 40% by weight solution. Furthermore, silicon carbide powder (nominal particle size 0.50 μm) was added to
g to prepare a coating solution. A wire rod produced by the same fitting method as in Example 1 was immersed in this coating solution. It was removed from the coating solution and heated at a temperature of 500° C. for 10 minutes. This coating and heating process was repeated five times to form an insulating ceramic layer.
【0038】得られた絶縁電線から、長さ30cmのサ
ンプルを採取した。厚さ0.02mmの白金箔を、約5
0mmの間隔を隔てて、このサンプルの4か所に、それ
ぞれ約10mmの長さに密接に巻付けた。導体と金属箔
の間に60Hzの交流電圧を印加したところ、800V
で絶縁破壊した。また、絶縁電線を曲げ加工したところ
、直径50mmの径に曲げても絶縁性は維持された。A sample with a length of 30 cm was taken from the obtained insulated wire. Approximately 5 pieces of platinum foil with a thickness of 0.02mm
The sample was wrapped closely at four locations, each approximately 10 mm long, at 0 mm intervals. When a 60Hz AC voltage was applied between the conductor and the metal foil, the voltage was 800V.
dielectric breakdown occurred. Furthermore, when the insulated wire was bent, the insulation properties were maintained even when the wire was bent to a diameter of 50 mm.
【0039】さらに、この絶縁電線を600℃で200
0時間加熱した後、長さ30cmのサンプルを採取した
。上記と同様に、厚さ0.02mm白金箔を、約50m
mの間隔を隔ててこのサンプルの4か所に、それぞれ約
10mmの長さで密接に巻付けた。導体と金属箔の間に
60Hzの交流電圧を印加したところ800Vで絶縁破
壊した。さらに、導電率を測定したところ、79%IA
CSを維持した。Furthermore, this insulated wire was heated at 600°C for 200°C.
After heating for 0 hours, samples with a length of 30 cm were taken. In the same way as above, approximately 50 m of platinum foil with a thickness of 0.02 mm was
The sample was wrapped closely at four locations with a distance of m, each approximately 10 mm long. When an AC voltage of 60 Hz was applied between the conductor and the metal foil, dielectric breakdown occurred at 800V. Furthermore, when the conductivity was measured, it was found to be 79% IA
Maintained CS.
【0040】実施例3
無酸素銅の芯材のまわりにオーステナイト系の不銹鋼(
SuS304)層を形成し、不銹鋼層のまわりにさらに
銅の層を形成した構造の線材を、嵌合法により準備した
。これを伸線加工し細径化した後、最外層の銅を硝酸に
より溶解し除去した。この線材に対し、サージェント浴
を用いて、3μmの厚みでニッケルめっきを施した。
この結果、線径0.45mmであり、不銹鋼層の厚みが
10μmである線材が得られた。この線材の初期の導電
率は、89.7%IACSであった。Example 3 Austenitic stainless steel (
A wire rod having a structure in which a SuS304) layer was formed and a copper layer was further formed around the stainless steel layer was prepared by a fitting method. After wire drawing the wire to reduce its diameter, the outermost copper layer was dissolved and removed with nitric acid. This wire was nickel plated to a thickness of 3 μm using a Sargent bath. As a result, a wire rod having a wire diameter of 0.45 mm and a stainless steel layer thickness of 10 μm was obtained. The initial conductivity of this wire was 89.7% IACS.
【0041】この線材の外表面に以下のようにして酸化
クロム含有層を形成した。電気めっき液として、その濃
度が無水クロム酸200g/l、メタバナジン酸アンモ
ニウム20g/l、酢酸6.5g/lのものを用い、め
っき条件は、導体を陰極として、浴温50℃、電流密度
150A/dm2 、処理時間2分間にしてクロムめっ
きを行なった。このようにして、外表面に酸化クロム含
有層が約1μmの厚みで形成された。A chromium oxide-containing layer was formed on the outer surface of this wire in the following manner. An electroplating solution with a concentration of 200 g/l of chromic anhydride, 20 g/l of ammonium metavanadate, and 6.5 g/l of acetic acid was used as the electroplating solution, and the plating conditions were as follows: the conductor was used as the cathode, the bath temperature was 50°C, and the current density was 150 A. Chromium plating was performed at a temperature of /dm2 and a treatment time of 2 minutes. In this way, a chromium oxide-containing layer with a thickness of about 1 μm was formed on the outer surface.
【0042】ジルコニウムブトキシド10モル%と、エ
タノールアミン20モル%のn−ブタノール溶液に、ジ
ルコニウムアルコキシドに対し2.1倍のモルの水をジ
エチレングリコールモノメチルエーテルを希釈して加え
、110℃で2時間撹拌し、塗布溶液を準備した。[0042] To a solution of 10 mol% zirconium butoxide and 20 mol% ethanolamine in n-butanol, 2.1 times the molar amount of water relative to the zirconium alkoxide was diluted with diethylene glycol monomethyl ether, and the mixture was stirred at 110°C for 2 hours. Then, a coating solution was prepared.
【0043】酸化クロム含有層を形成した線材を、この
塗布液に浸漬した。この線材を引き上げて、800℃で
10分間加熱した。この浸漬塗布および加熱の工程を1
0回繰返し、絶縁性セラミックス層を形成した。The wire rod on which the chromium oxide-containing layer was formed was immersed in this coating solution. This wire was pulled up and heated at 800° C. for 10 minutes. This dip coating and heating process is completed in 1
This was repeated 0 times to form an insulating ceramic layer.
【0044】得られた絶縁電線から、長さ30cmのサ
ンプルを採取した。厚さ0.02mmの白金箔を、約5
0mmの間隔を隔てて、サンプルの4か所に、それぞれ
約10mmの長さで巻付けた。導体と金属箔の間に60
Hzの交流電圧を印加したところ、1000Vで絶縁破
壊した。絶縁電線を曲げ加工したところ、直径20mm
の径に曲げても絶縁性は維持された。A sample with a length of 30 cm was taken from the obtained insulated wire. Approximately 5 pieces of platinum foil with a thickness of 0.02mm
The sample was wrapped at four locations with a length of about 10 mm at intervals of 0 mm. 60 between conductor and metal foil
When an AC voltage of Hz was applied, dielectric breakdown occurred at 1000V. When the insulated wire was bent, the diameter was 20mm.
The insulation properties were maintained even when bent to a diameter of .
【0045】さらに、この絶縁電線を600℃で200
0時間加熱した後、長さ30cmのサンプルを採取した
。厚さ0.02mmの白金箔を、約50mmの間隔を隔
ててサンプルの4か所に、約10mmの長さ巻付けた。
導体と金属箔の間に、60Hzの交流電圧を印加したと
ころ、1000Vで絶縁破壊した。さらに、導電率を測
定したところ、89.2%IACSを維持した。Furthermore, this insulated wire was heated at 600°C for 200°C.
After heating for 0 hours, samples with a length of 30 cm were taken. Platinum foil with a thickness of 0.02 mm was wrapped around the sample at four locations with a length of about 10 mm at intervals of about 50 mm. When an AC voltage of 60 Hz was applied between the conductor and the metal foil, dielectric breakdown occurred at 1000V. Furthermore, when the conductivity was measured, 89.2% IACS was maintained.
【図1】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
1 芯材
2 鉄もしくは鉄基合金層
3 ニッケルもしくはニッケル基合金層4 絶縁性
セラミックス層1 Core material 2 Iron or iron-based alloy layer 3 Nickel or nickel-based alloy layer 4 Insulating ceramic layer
Claims (6)
前記芯材の外表面に設けられる鉄もしくは鉄基合金層と
、前記鉄もしくは鉄基合金層の外表面に設けられるニッ
ケルもしくはニッケル基合金層と、セラミックスの前駆
体溶液の加熱処理によって前記ニッケルもしくはニッケ
ル基合金層の外表面に形成される絶縁性セラミックス層
とを備える、絶縁電線。[Claim 1] A core material made of copper or a copper-based alloy;
The iron or iron-based alloy layer provided on the outer surface of the core material, the nickel or nickel-based alloy layer provided on the outer surface of the iron or iron-based alloy layer, and the nickel or nickel-based alloy layer provided on the outer surface of the core material by heat treatment of a ceramic precursor solution. An insulated wire comprising an insulating ceramic layer formed on the outer surface of a nickel-based alloy layer.
項1に記載の絶縁電線。2. The insulated wire according to claim 1, wherein the iron-based alloy is stainless steel.
ルコキシド、金属の有機酸塩、シリコーン樹脂、ポリシ
ラザン、ポリカルボシラン、またはポリボロシロキサン
である、請求項1に記載の絶縁電線。3. The insulated wire according to claim 1, wherein the ceramic precursor is a metal alkoxide, a metal organic acid salt, a silicone resin, a polysilazane, a polycarbosilane, or a polyborosiloxane.
、アルミナ、ジルコニア、窒化ケイ素、炭化ケイ素、窒
化アルミニウム、もしくはこれらの混合体または部分安
定化ジルコニアを含む、請求項1に記載の絶縁電線。4. The insulated wire according to claim 1, wherein the insulating ceramic layer contains silica, alumina, zirconia, silicon nitride, silicon carbide, aluminum nitride, a mixture thereof, or partially stabilized zirconia.
セラミックス微粒子を分散させた、請求項1に記載の絶
縁電線。5. In the ceramic precursor solution,
The insulated wire according to claim 1, wherein ceramic fine particles are dispersed.
層の表面に電気めっきにより、酸化クロム含有層を形成
した、請求項1に記載の絶縁電線。6. The insulated wire according to claim 1, wherein a chromium oxide-containing layer is formed on the surface of the nickel or nickel-based alloy layer by electroplating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3067069A JPH04301317A (en) | 1991-03-29 | 1991-03-29 | insulated wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3067069A JPH04301317A (en) | 1991-03-29 | 1991-03-29 | insulated wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04301317A true JPH04301317A (en) | 1992-10-23 |
Family
ID=13334195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3067069A Withdrawn JPH04301317A (en) | 1991-03-29 | 1991-03-29 | insulated wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04301317A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04332403A (en) * | 1991-05-07 | 1992-11-19 | Hitachi Cable Ltd | Heat-resistant insulated wire and method for manufacturing the same, and method for manufacturing heat-resistant insulating material |
-
1991
- 1991-03-29 JP JP3067069A patent/JPH04301317A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04332403A (en) * | 1991-05-07 | 1992-11-19 | Hitachi Cable Ltd | Heat-resistant insulated wire and method for manufacturing the same, and method for manufacturing heat-resistant insulating material |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |