JPH0430828Y2 - - Google Patents
Info
- Publication number
- JPH0430828Y2 JPH0430828Y2 JP1984201484U JP20148484U JPH0430828Y2 JP H0430828 Y2 JPH0430828 Y2 JP H0430828Y2 JP 1984201484 U JP1984201484 U JP 1984201484U JP 20148484 U JP20148484 U JP 20148484U JP H0430828 Y2 JPH0430828 Y2 JP H0430828Y2
- Authority
- JP
- Japan
- Prior art keywords
- input
- switching elements
- switching
- amplifier
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electronic Switches (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Description
【考案の詳細な説明】
[考案の利用分野]
この考案は、各種の入力信号を切換えて取り込
む入力切換装置に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] This invention relates to an input switching device that switches and takes in various input signals.
[従来の技術]
測温抵抗体、熱電対、mV、大入力等の各種の
入力信号のレンジを切換えて取り込むには、スイ
ツチを用いて切換えるようにしていた。近年、マ
イクロコンピユータにより切換を行うことができ
るものが要求され、リレー、ICとしてのアナロ
グスイツチが使用されている。[Prior Art] Switches have been used to change the range of various input signals such as resistance temperature detectors, thermocouples, mV, and large input signals. In recent years, there has been a demand for switches that can be switched using a microcomputer, and analog switches have been used as relays and ICs.
[考案が解決しようとする問題点]
しかしながら、リレーでは、寿命があり、頻繁
に開閉する場合に問題を生じる。また、アナログ
スイツチでは、寿命の点は解決されるが、耐圧が
あまりないため、入力ラインに直接接続すると、
ノイズ等により破壊されるおそれがあつた。[Problems to be solved by the invention] However, relays have a limited lifespan, and problems arise when they are frequently opened and closed. Also, although analog switches solve the problem of longevity, they do not have much withstand voltage, so if you connect them directly to the input line,
There was a risk that it would be destroyed by noise, etc.
この考案の目的は、以上の点に鑑み、高寿命で
しかもノイズにも強い入力切換装置を提供するこ
とである。 In view of the above points, the purpose of this invention is to provide an input switching device that has a long life and is resistant to noise.
[問題点を解決するための手段]
この考案は、供給された入力信号の種類に対応
して入力信号経路を切換える光絶縁されて駆動さ
れる電界効果トランジスタよりなる切換素子と、
この切換素子により切換えられた入力信号を測定
する測定回路とを備えるようにした入力切換装置
である。[Means for Solving the Problems] This invention includes a switching element consisting of an optically isolated and driven field effect transistor that switches the input signal path according to the type of input signal supplied;
The input switching device includes a measurement circuit that measures the input signal switched by the switching element.
[実施例]
第1図は、この考案の一実施例を示す構成説明
図である。[Embodiment] FIG. 1 is a configuration explanatory diagram showing an embodiment of this invention.
図において、11,12は、各種の入力信号が
供給される入力端子、FET1,……,FET9は、
入力端子11,12に供給された入力信号の種類
に対応して入力信号経路を切換える光絶縁されて
駆動される電界効果トランジスタよりなる切換素
子、2は、切換素子FET1,……,FET9によ
り切換えられた入力信号を増幅する増幅器A1,
A2等を含む測定回路、l1,l2は入力端子11,1
2に接続する入力ラインである。 In the figure, 11 and 12 are input terminals to which various input signals are supplied, and FET1, ..., FET9 are
A switching element 2 consisting of an optically isolated and driven field effect transistor that switches the input signal path according to the type of input signal supplied to the input terminals 11 and 12 is switched by the switching elements FET1, ..., FET9. Amplifier A 1 which amplifies the input signal given by
Measurement circuit including A 2, etc., l 1 and l 2 are input terminals 11, 1
This is the input line connected to 2.
切換素子FET1は、入力端子11と増幅器A1
との間に入力ラインl1にドレインDとソースSを
介して設けられ、ゲートGとソースS間に第2図
で詳細を示すように発光ダイオードのような発光
素子LEDの光により起電力を発生するSi太陽電
池のような光起電力素子SBの電源P1の電圧が印
加される高耐圧電界効果トランジスタより構成さ
れている。他の切換素子FET2,……,FET9
も同様の構成で、ソースSの電位に対し、ゲート
Gの電圧が規定電圧以上でオン、規定電圧以下で
オフとなる。 Switching element FET1 connects input terminal 11 and amplifier A 1
An input line L1 is provided between the drain D and the source S, and an electromotive force is generated between the gate G and the source S by the light of a light emitting element LED such as a light emitting diode, as shown in detail in Figure 2. It is composed of a high voltage field effect transistor to which the voltage of the power source P1 of the photovoltaic element SB, such as a Si solar cell, is applied. Other switching elements FET2, ..., FET9
has a similar configuration, and is turned on when the voltage of the gate G is higher than or equal to a specified voltage with respect to the potential of the source S, and turned off when it is lower than or equal to the specified voltage.
切換素子FET2は、入力端子11と増幅器A2
との間の入力ラインl2とアース間に設けられ、切
換素子FET3,FET4,FET5は、入力ライン
l2の信号を抵抗R1,R2で分圧して増幅器A1に供
給するよう設けられ、FET6,FET7は電流源
I1を入力ラインl1、入力端子11に、FET8,
FET9は、入力ラインl2、入力端子12に電流源
I2を供給するように設けられている。なお、切換
素子FET4,5、FET6,7、FET8,9は、
高耐圧電界効果トランジスタがもつ耐圧の方向性
の影響を無くすため、ソースS間を共通接続した
2個1組の構成となつている。 Switching element FET2 connects input terminal 11 and amplifier A 2
The switching elements FET3, FET4, and FET5 are provided between the input line l2 and the ground.
l 2 signal is divided by resistors R 1 and R 2 and supplied to amplifier A 1 , and FET 6 and FET 7 are current sources.
I 1 to input line l 1 , input terminal 11, FET8,
FET9 has a current source on input line l 2 and input terminal 12.
It is arranged to supply I2 . In addition, the switching elements FET4, 5, FET6, 7, FET8, 9 are as follows:
In order to eliminate the influence of the directionality of the breakdown voltage of the high breakdown voltage field effect transistor, the transistors are configured as a set of two with their sources S commonly connected.
入力信号がmV、熱電対の場合は、切換素子
FET1,FET2の電源P1,P2の発光素子LEDを
駆動して発光させ、光起電力素子SBに電圧を発
生させ、この電圧をゲートG、ソースS間に印加
し、オンとする。このことにより、第3図aのよ
うな入力回路となり、入力端子12はアースさ
れ、mV、熱電対用のものとなる。 If the input signal is mV and a thermocouple, the switching element
The light emitting elements LED of the power supplies P 1 and P 2 of FET1 and FET2 are driven to emit light, a voltage is generated in the photovoltaic element SB, and this voltage is applied between the gate G and the source S to turn it on. This results in an input circuit as shown in FIG. 3a, where the input terminal 12 is grounded and is for mV and thermocouples.
入力信号が測温抵抗体入力の場合は、切換素子
FET1,FET6,7,8,9をオンとし、第3
図bのような入力回路となり、入力端子11,1
2に接続された測温抵抗体Rtに2つの定電流源
I1,I2が接続され、増幅器A2も入力端子12に接
続し、抵抗入力用となる。 If the input signal is a resistance temperature detector input, the switching element
Turn on FET1, FET6, 7, 8, and 9, and
The input circuit will be as shown in figure b, and the input terminals 11, 1
Two constant current sources are connected to the resistance temperature detector Rt connected to
I 1 and I 2 are connected, and amplifier A 2 is also connected to input terminal 12 for resistance input.
入力信号が大入力の場合は、切換素子FET2,
3,4,5をオンとし、第3図cのような入力回
路となり、端子11の入力電圧は抵抗R1,R2で
分圧されて増幅器A1に供給され、大入力用のも
のとなる。 When the input signal is large, the switching element FET2,
3, 4, and 5 are turned on, the input circuit becomes as shown in Figure 3c, and the input voltage at terminal 11 is divided by resistors R 1 and R 2 and supplied to amplifier A 1 , which is for large input. Become.
なお、切換素子FET2のソースSはアースさ
れてソース電位が一定のため、特に第2図のよう
な浮いた電源ではなく、適当な電圧をゲートGに
印加するだけでもよい。 Incidentally, since the source S of the switching element FET2 is grounded and the source potential is constant, it is sufficient to simply apply an appropriate voltage to the gate G instead of using a floating power supply as shown in FIG.
ところで、上記第3図bの従来から使用されて
いる3線式の測温抵抗体入力の場合の2電流によ
る測定回路の動作について説明する。 By the way, the operation of the measuring circuit using two currents in the case of the conventionally used three-wire type resistance temperature detector input shown in FIG. 3(b) will be explained.
図において、測温抵抗体Rtの抵抗値をRtとし、
測温抵抗体Rtと入力端子11との第1の配線抵
抗、入力端子12との第2の配線抵抗、およびア
ースとの第3の配線抵抗の抵抗値を各々rとし、
そして、電流源I1から定電流iを、入力端子1
1、第1の配線抵抗、測温抵抗体Rt、第3の配
線抵抗、アースと流し、また、電流源I2から定
電流iを、入力端子12、第2の配線抵抗、第3
の配線抵抗、アースと流し、第3の配線抵抗には
2iが流れるので、入力端子11,12の各電圧
V1,V2は次のようになる。 In the figure, the resistance value of the resistance temperature detector Rt is Rt,
The resistance values of the first wiring resistance between the resistance temperature detector Rt and the input terminal 11, the second wiring resistance between the input terminal 12, and the third wiring resistance between the earth and the ground are respectively r,
Then, a constant current i is applied from the current source I1 to the input terminal 1.
1. The first wiring resistance, the resistance temperature detector Rt, the third wiring resistance, and the ground, and also the constant current i from the current source I2, the input terminal 12, the second wiring resistance, and the third wiring resistance.
Since 2i flows through the wiring resistance and the ground, and 2i flows through the third wiring resistance, the voltages V1 and V2 at the input terminals 11 and 12 are as follows.
V1=ir+iRt+2ir=iRt+3ir
V2=ir+2ir=3ir
ここで、増幅器A1,A2のゲイン等を適当な
ものとし、両者V1,V2の差をとることによ
り、配線抵抗の影響3irが除去された出力iRtに比
例した出力が得られる。V1 = ir + iRt + 2ir = iRt + 3ir V2 = ir + 2ir = 3ir Here, by setting the gains of amplifiers A1 and A2 appropriately and taking the difference between both V1 and V2, it is proportional to the output iRt from which the influence of wiring resistance 3ir has been removed. The following output is obtained.
[考案の効果]
以上述べたように、この考案は、切換素子とし
て光絶縁されて駆動される電界効果トランジスタ
を用いているので、長寿命でノイズに強く、容易
に入力信号の種類、レンジに対応した入力回路と
することができる。[Effects of the invention] As mentioned above, this invention uses a photo-insulated and driven field effect transistor as a switching element, so it has a long life, is resistant to noise, and is easily adaptable to input signal types and ranges. A corresponding input circuit can be used.
第1図、第2図、第3図は、この考案の一実施
例を示す構成説明図である。
11,12……入力端子、2……測定回路、
FET1〜FET9……切換素子、P1〜P6……
電源、I1,I2……定電流源、l1,l2……入力ライ
ン。
FIG. 1, FIG. 2, and FIG. 3 are configuration explanatory diagrams showing one embodiment of this invention. 11, 12...Input terminal, 2...Measurement circuit,
FET1~FET9...Switching element, P1~P6...
Power supply, I 1 , I 2 ... constant current source, l 1 , l 2 ... input line.
Claims (1)
の入力ラインに設けられた第1の切換素子と、
第2の入力端子と第1の増幅器に入力側にその
出力側が接続される第2の増幅器との間の第2
の入力ラインとアースとの間に設けられた第2
の切換素子と、第1の入力ラインの信号を分圧
して第1の増幅器に供給する分圧抵抗の前後に
設けられた第3,4,5、の切換素子と、第1
の電流源と第1の入力ラインとの間に設けられ
た第6、第7の切換素子と、第2の電流源と第
2の入力ラインとの間に設けられた第8、第9
の切換素子とを備え、前記第1から第9の各切
換素子は光絶縁されて駆動される電界効果トラ
ンジスタよりなり、第1、第2の入力端子に接
続供給される入力信号がmV、熱電対のときは
第1、第2の切換素子がオンとされ、測温抵抗
体のときは第1、第6、第7、第8、第9の切
換素子がオンとされ、大入力のときは第2、第
3、第4、第5の切換素子がオンとされる構成
としたことを特徴とする入力切換装置。 2 前記各切換素子は、発光素子の光により起電
力を発生する光起電力素子と、この起電力素子
の電圧がゲートおよびソース間に印加される高
耐圧電界効果トランジスタとよりなり、前記第
4、第5の切換素子、第6、第7の切換素子、
第8、第9の切換素子は、各高耐電圧電界効果
トランジスタのソース間を共通接続してなるこ
とを特徴とする実用新案登録請求の範囲第1項
記載の入力切換装置。[Claims for Utility Model Registration] 1. The first terminal between the first input terminal and the first amplifier.
a first switching element provided on the input line of;
a second amplifier between the second input terminal and the second amplifier whose output side is connected to the input side of the first amplifier;
A second line provided between the input line and ground
a switching element, third, fourth, and fifth switching elements provided before and after the voltage dividing resistor that divides the signal of the first input line and supplies it to the first amplifier;
sixth and seventh switching elements provided between the current source and the first input line, and eighth and ninth switching elements provided between the second current source and the second input line.
switching elements, each of the first to ninth switching elements is composed of a field effect transistor driven in an optically insulated manner, and the input signal connected and supplied to the first and second input terminals is mV, thermoelectric In the case of a pair, the first and second switching elements are turned on, and in the case of a resistance temperature detector, the first, sixth, seventh, eighth and ninth switching elements are turned on, and in the case of a large input. An input switching device characterized in that the second, third, fourth, and fifth switching elements are turned on. 2. Each of the switching elements includes a photovoltaic element that generates an electromotive force by light from a light emitting element, and a high voltage field effect transistor to which the voltage of this electromotive force element is applied between the gate and the source, and , a fifth switching element, a sixth switching element, a seventh switching element,
2. The input switching device according to claim 1, wherein the eighth and ninth switching elements are formed by commonly connecting the sources of respective high voltage field effect transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984201484U JPH0430828Y2 (en) | 1984-12-28 | 1984-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984201484U JPH0430828Y2 (en) | 1984-12-28 | 1984-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61116438U JPS61116438U (en) | 1986-07-23 |
| JPH0430828Y2 true JPH0430828Y2 (en) | 1992-07-24 |
Family
ID=30763319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984201484U Expired JPH0430828Y2 (en) | 1984-12-28 | 1984-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0430828Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002022542A (en) * | 2000-07-05 | 2002-01-23 | Toshiba Mach Co Ltd | Plc with variable temperature measurement resolution |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503770A (en) * | 1973-05-15 | 1975-01-16 |
-
1984
- 1984-12-28 JP JP1984201484U patent/JPH0430828Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61116438U (en) | 1986-07-23 |
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