JPH043083B2 - - Google Patents
Info
- Publication number
- JPH043083B2 JPH043083B2 JP10155085A JP10155085A JPH043083B2 JP H043083 B2 JPH043083 B2 JP H043083B2 JP 10155085 A JP10155085 A JP 10155085A JP 10155085 A JP10155085 A JP 10155085A JP H043083 B2 JPH043083 B2 JP H043083B2
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- plating film
- plating
- molded body
- resistor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 45
- 229920000642 polymer Polymers 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000011231 conductive filler Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000007772 electroless plating Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- -1 polyethylene Polymers 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 230000035939 shock Effects 0.000 description 7
- 238000004898 kneading Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 235000019241 carbon black Nutrition 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- ODBCKCWTWALFKM-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhex-3-yne Chemical compound CC(C)(C)OOC(C)(C)C#CC(C)(C)OOC(C)(C)C ODBCKCWTWALFKM-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006234 thermal black Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は、電極を備え正温度特性を有する高分
子抵抗体の製造法に関し、更に詳しくは、メツキ
皮膜からなる電極と正温度特性を有する成形体と
の相互密着強度が大きな高分子抵抗体の製造法に
関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to a method for manufacturing a polymer resistor having positive temperature characteristics and is equipped with an electrode, and more specifically relates to a method for manufacturing a polymer resistor comprising an electrode and having positive temperature characteristics. This invention relates to a method for manufacturing a polymer resistor that has high mutual adhesion strength with a body.
［発明の技術的背景とその問題点］
電気、電子機器部品に付帯して使用される正温
度特性素子として、最近、基材が高分子からなつ
て正温度特性を有する高分子抵抗体が賞用されて
いる。[Technical background of the invention and its problems] Polymer resistors, whose base material is made of polymer and have positive temperature characteristics, have recently been prized as positive temperature characteristics elements used incidentally to electrical and electronic equipment parts. It is used.
このように抵抗体は、通常、正温度特性を具備
する高分子成形体とその表裏面に取付けられた電
極とから構成されている。 As described above, a resistor is usually composed of a polymer molded body having positive temperature characteristics and electrodes attached to the front and back surfaces of the polymer molded body.
これら高分子抵抗体の中には、例えばUSP−
4426633号公報に開示されているように、正温度
特性を有する成形体の表裏面に電極として金属箔
を圧着して一体化したものや、特開昭55−15907
号公報に開示されているように、正温度特性を有
する成形体の表裏面に電極として網状金属を熱融
着して一体化したものが知られている。 Some of these polymer resistors include, for example, USP-
As disclosed in Japanese Patent Publication No. 4426633, metal foils are crimped and integrated as electrodes on the front and back surfaces of a molded body having positive temperature characteristics, and in JP-A No. 55-15907,
As disclosed in the above publication, a molded body having positive temperature characteristics is known in which mesh metals are heat-sealed and integrated as electrodes on the front and back surfaces of the molded body.
しかしながら、このように金属箔や網状金属を
高分子成形体に取付けた高分子抵抗体において
は、電極−成形体間の接触抵抗を十分に低減する
ことが困難である。 However, in such a polymer resistor in which metal foil or mesh metal is attached to a polymer molded body, it is difficult to sufficiently reduce the contact resistance between the electrode and the molded body.
そこで、このような接触抵抗の問題を解消する
ために、本発明者らは、高分子成形体に十分なエ
ツチング処理を施したのちそこに電気メツキもし
くは無電解メツキを施して、メツキ皮膜からなる
電極を備えた高分子抵抗体を提案した（特開昭60
−28394号）。 Therefore, in order to solve this problem of contact resistance, the present inventors performed sufficient etching treatment on the polymer molded body and then applied electroplating or electroless plating thereto to form a plating film made of a plating film. proposed a polymer resistor equipped with electrodes (Japanese Patent Application Laid-Open No. 1989-1999)
−28394).
しかしながら、このように成形体の上に単にメ
ツキ皮膜を形成した高分子抵抗体においては、接
触抵抗を低減せしめることは可能となるが、その
一方では、メツキ皮膜と成形体との密着強度が充
分ではなく、ヒートシヨツクを受けた場合成形体
からメツキ皮膜が剥離するという問題を引起して
いる。 However, in a polymer resistor in which a plating film is simply formed on a molded body, it is possible to reduce the contact resistance, but on the other hand, the adhesion strength between the plating film and the molded body is not sufficient. Instead, the problem arises that the plating film peels off from the molded product when it is subjected to heat shock.
［発明の目的］
本発明は、上記した問題点を解消し、メツキ皮
膜と成形体の密着強度が大きく、ヒートシヨツク
を受けても密着強度が低下せず、しかも室温下に
おける抵抗値が小さい高分子抵抗体を製造する方
法の提供を目的とする。[Object of the Invention] The present invention solves the above-mentioned problems, and provides a high-temperature coating that has high adhesion strength between the plating film and the molded product, does not decrease in adhesion strength even when subjected to heat shock, and has a low resistance value at room temperature. The present invention aims to provide a method for manufacturing a molecular resistor.
［発明の概要］
本発明の高分子抵抗体の製造法は、結晶正高分
子重合体40〜90重量％と導電性充填材10〜60重量
％との混練組成物の成形体の表面に、エツチング
処理を施した後、該成形体の表面に電気メツキも
しくは無電解メツキ処理を施してメツキ皮膜を形
成し、ついで、該結晶性高分子重合体の結晶化温
度以上の温度において、該成形体のメツキ皮膜上
に圧力を加えることを特徴とする。[Summary of the Invention] The method for producing a polymer resistor of the present invention includes etching the surface of a molded product of a kneaded composition of 40 to 90% by weight of a crystalline positive polymer and 10 to 60% by weight of a conductive filler. After the treatment, the surface of the molded body is subjected to electroplating or electroless plating to form a plating film, and then the molded body is heated at a temperature higher than the crystallization temperature of the crystalline polymer. It is characterized by applying pressure on the plating film.
まず、本発明で使用される正温度特性を有する
成形体は、結晶性高分子重合体と導電性充填材と
からなる。 First, the molded article having positive temperature characteristics used in the present invention is made of a crystalline high molecular weight polymer and a conductive filler.
成形体の構成要件の１つである結晶性高分子重
合体としては、ポリエチレン、ポリプロピレン、
エチレン共重合体、ポリアミド、フツ素系重合体
などがあげられる。 The crystalline polymer, which is one of the components of the molded product, includes polyethylene, polypropylene,
Examples include ethylene copolymers, polyamides, and fluorine-based polymers.
また、他の要件である導電性充填材としては、
フアーネスブラツク、サーマルブラツク、アセチ
レンブラツクなどのカーボンブラツクが好まし
く、その他粒径20μ以下のグラフアイト粉末、金
属粒子；長さ１mm以下でアスペクト比10以上の炭
素繊維、金属繊維；などがあげられ、また、これ
らの混合物であつてもよい。 In addition, as for the conductive filler which is another requirement,
Carbon blacks such as furnace black, thermal black, and acetylene black are preferred; other examples include graphite powder and metal particles with a particle size of 20μ or less; carbon fibers and metal fibers with a length of 1mm or less and an aspect ratio of 10 or more; Alternatively, a mixture of these may be used.
正温度特性を有する成形体は、上記した結晶性
高分子重合体と導電性充填材とを配合して溶融混
練したのち、常法により成形することにより得ら
れる。 A molded article having positive temperature characteristics can be obtained by blending the above-described crystalline polymer and a conductive filler, melt-kneading the mixture, and then molding the mixture by a conventional method.
結晶性高分子重合体と導電性充填材の配合割合
は、前者40〜90重量％、後者10〜60重量％に設定
する。導電性充填材の配合量が10重量％未満の場
合（したがつて結晶性高分子重合体90重量％以
上）には、得られた成形体に正温度特性が発現せ
ず、また、60重量％を超えると混練が困難にな
る。 The mixing ratio of the crystalline polymer and the conductive filler is set to 40 to 90% by weight for the former and 10 to 60% by weight for the latter. If the content of the conductive filler is less than 10% by weight (therefore, the crystalline polymer is 90% by weight or more), the resulting molded product will not exhibit positive temperature characteristics, and the 60% by weight If it exceeds %, kneading becomes difficult.
溶融混練は、通常の溶融混練機例えばバンバリ
ーミキサー、２本又は３本ロールを用いて、温
度：140〜250℃、時間：５〜40分間の条件で行な
えばよい。また、溶融混練の際、２，５−ジメチ
ル−２，５−ジ（ｔ−ブチルパーオキシ）ヘキシ
ン−３のような周知の架橋剤を添加して架橋を行
なつてもよい。 Melt-kneading may be carried out using a conventional melt-kneading machine such as a Banbury mixer with two or three rolls at a temperature of 140 to 250°C and a time of 5 to 40 minutes. Further, during melt-kneading, a well-known crosslinking agent such as 2,5-dimethyl-2,5-di(t-butylperoxy)hexyne-3 may be added to effect crosslinking.
以上のようにして得られる成形体を用いて、成
形体の表面にメツキ処理を施してメツキ皮膜を形
成することにより電極を得る。 Using the molded body obtained as described above, an electrode is obtained by plating the surface of the molded body to form a plating film.
このメツキ処理の前処理工程として、成形体表
面の樹脂を取除き導電性充填材を露出させて、成
形体表面の導電化を図ると共に、樹脂成形体とメ
ツキ皮膜との密着性を向上させる目的でエツチン
グ処理を行なう。 As a pre-treatment step for this plating process, the resin on the surface of the molded object is removed to expose the conductive filler to make the surface of the molded object conductive and to improve the adhesion between the resin molded object and the plating film. Perform the etching process.
エツチング処理法としては、クロム門混酸液、
キシレン溶液等を用いる方法、サンドブラスト等
の如く機械的に表面を粗面化する方法があげられ
る。 Etching treatment methods include chrome mixed acid solution,
Examples include a method using a xylene solution or the like, and a method of mechanically roughening the surface such as sandblasting.
次に、エツチング処理が施された高分子成形体
の表面にメツキ処理を施す。メツキ処理法として
は、電気メツキ法と無電解メツキ法のいずれもが
適用できる。 Next, a plating process is performed on the surface of the polymer molded body that has been subjected to the etching process. As the plating method, both the electroplating method and the electroless plating method can be applied.
電気メツキ法においては、金属塩を含むメツキ
浴中にその成形体を陰極、金属、黒鉛などを陽極
として浸漬して行なう。メツキ処理に際しては、
電流密度0.05〜10A／ｄm2、メツキ浴温度10〜
100℃の条件下でメツキ液を撹拌しながら行なう。 In the electroplating method, the molded body is immersed in a plating bath containing a metal salt, with a cathode, metal, graphite, etc. serving as an anode. When plating,
Current density 0.05~10A/ dm2 , plating bath temperature 10~
The plating solution is stirred at 100℃.
無電解メツキ法においては、メツキ処理の前処
理として通常のプラスチツクメツキ法に採用され
ているセンシタイジング・アクチベーシヨン法や
キヤタリスト・アクセレーター法で、成形体表面
を活性化させたのち、常法の無電解メツキを施す
とよい。また、無電解メツキを行なつた後に、所
定膜厚のメツキ皮膜を得るために、更に電気メツ
キを施してもよい。 In the electroless plating method, the surface of the molded object is activated by the sensitizing activation method or the catalyst accelerator method, which are used in ordinary plastic plating methods, as a pretreatment for the plating process, and then regular plating is performed. It is best to use electroless plating according to the law. Moreover, after performing electroless plating, electroplating may be further performed in order to obtain a plating film having a predetermined thickness.
また、メツキ皮膜を構成する金属としては、ニ
ツケル、銅、スズ、クロム、銀などが好ましい。 Further, as the metal constituting the plating film, nickel, copper, tin, chromium, silver, etc. are preferable.
また、メツキ皮膜の膜厚が0.1μｍ以上となるよ
うにメツキ処理時間や通電量を調節することが好
ましい。 Further, it is preferable to adjust the plating treatment time and the amount of current applied so that the thickness of the plating film is 0.1 μm or more.
次に、表面にメツキ皮膜が形成された高分子抵
抗体のメツキ皮膜上に圧力を加えて、成形体とメ
ツキ皮膜とを圧着する。 Next, pressure is applied to the plating film of the polymer resistor having the plating film formed on the surface thereof, and the molded body and the plating film are crimped together.
本発明方法は、この成形体とメツキ皮膜とが圧
着される工程を含むところに最大の特徴を有する
ものである。この工程が付加されることによりメ
ツキ皮膜と成形体の密着強度が増大するのであ
る。 The most distinctive feature of the method of the present invention is that it includes a step in which the molded body and the plating film are pressure-bonded. By adding this step, the adhesion strength between the plating film and the molded body increases.
この圧着工程においては、該成形体を結晶性高
分子重合体の結晶化温度以上に加熱することが必
要である。この結晶化温度以上に成形体を加熱し
ない場合には、成形体とメツキ皮膜の密着強度が
不十分である。 In this pressure bonding step, it is necessary to heat the molded article to a temperature higher than the crystallization temperature of the crystalline polymer. If the molded body is not heated above this crystallization temperature, the adhesion strength between the molded body and the plating film will be insufficient.
メツキ皮膜へ印加する圧力は１〜200Kg／cm2・
Ｇ好ましくは５〜100Kg／cm2・Ｇであり、圧着時
間は特に限定されるものではない。以上の圧着工
程は、熱プレス成形機や熱ロール成形機を用いて
行なうことができる。 The pressure applied to the plating film is 1 to 200Kg/ cm2 .
G is preferably 5 to 100 kg/cm 2 ·G, and the pressure bonding time is not particularly limited. The above pressure bonding process can be performed using a hot press molding machine or a hot roll molding machine.
［発明の実施例］
実施例 １
結晶性高分子重合体として高密度ポリエチレン
（出光石油化学(株)製、出光ポリエチレン
520B）
100重量部に対し、平均粒径43ｍμのカーボンブ
ラツク（三菱化成工業(株)製：ダイアブラツク
Ｅ）75重量部を配合し、これをバンバリーミキサ
ーにより溶融混練した後、架橋剤として、２，５
−ジメチル−２，５−ジ（ｔ−ブチルパーオキ
シ）ヘキシン−３を0.5重量部添加し、架橋させ
て樹脂組成物を得た。つぎに、この組成物を熱プ
レス機により肉厚0.8mmのシートに成形し、この
シートから縦10cm、横５cmの試験片を切り出し
た。この試験片をクロム酸混液（ハイクロム混
酸）中に浸漬して、60℃で15分間エツチング処理
した。ついで、試験片を水洗後、硫酸ニツケル
290ｇ／、塩化ニツケル50ｇ／、ホウ酸40
ｇ／含有する水溶液からなるメツキ浴に浸漬
し、この試験片を陰極とし、ニツケル板を陽極と
して電気メツキを施した。電気エツキは43℃にお
いて、陰極電流密度1A／ｄm2、電気量10000クロ
ーン／ｄm2であつた。[Examples of the invention] Example 1 High-density polyethylene (manufactured by Idemitsu Petrochemical Co., Ltd., Idemitsu Polyethylene 520B) as a crystalline polymer
For 100 parts by weight, carbon black (manufactured by Mitsubishi Chemical Industries, Ltd.: Diablack) with an average particle size of 43 mm
E) After blending 75 parts by weight and melt-kneading this with a Banbury mixer, add 2,5 parts by weight as a crosslinking agent.
-0.5 parts by weight of -dimethyl-2,5-di(t-butylperoxy)hexyne-3 was added and crosslinked to obtain a resin composition. Next, this composition was formed into a sheet with a wall thickness of 0.8 mm using a hot press machine, and a test piece measuring 10 cm in length and 5 cm in width was cut from this sheet. This test piece was immersed in a chromic acid mixed solution (high chromic acid mixed acid) and etched at 60°C for 15 minutes. Next, after washing the test piece with water, nickel sulfate was added.
290g/, nickel chloride 50g/, boric acid 40
The test piece was immersed in a plating bath consisting of an aqueous solution containing g/g, and electroplated using the test piece as a cathode and the nickel plate as an anode. The electric knife had a cathode current density of 1 A/dm 2 and an electric charge of 10,000 clones/dm 2 at 43°C.
このようにして得られたメツキ試験片を、熱プ
レス成形切により、190℃で15Kg／cm2・Ｇの圧力
をかけて５分間圧着処理を施した。圧着処理した
試験片を巾１cmの短冊状に切断し、メツキ皮膜の
引張剥離強度（JIS−Ｋ−6854）を測定したとこ
ろ、0.83Kg／cmであつた。また、この試験片に、
230℃から20℃へのヒートシヨツクを与えた後で
も剥離することはなかつた。さらに、この試験片
の１cm四方の角片を用いて、表裏面のニツケルメ
ツキ皮膜間の電気抵抗を、デジタルボルトメータ
ーにより四端子法で測定したところ、20℃におけ
る比抵抗は1.4Ωcmであつた。また、この角片を
150℃まで昇温したときの抵抗値と、20℃におけ
る抵抗値の比（抵抗増大倍率）は104.3倍であつ
た。 The plating test piece thus obtained was subjected to a pressure bonding process for 5 minutes at 190° C. by applying a pressure of 15 kg/cm 2 ·G by hot press molding. The crimped test piece was cut into strips with a width of 1 cm, and the tensile peel strength (JIS-K-6854) of the plating film was measured and found to be 0.83 kg/cm. In addition, this test piece
No peeling occurred even after applying a heat shock from 230°C to 20°C. Furthermore, using a 1 cm square piece of this test piece, the electrical resistance between the nickel plating films on the front and back surfaces was measured using a four-terminal method using a digital voltmeter, and the specific resistance at 20°C was 1.4 Ωcm. Also, use this corner piece
The ratio of the resistance value when the temperature was raised to 150°C and the resistance value at 20°C (resistance increase factor) was 10 4.3 times.
比較例 １
実施例１と同様にメツキを施した試験片に圧着
処理を施さなかつたものにつき、引張剥離強度を
測定したところ、0.18Kg／cmであつた。また、
230℃から20℃へのヒートシヨツクにより、メツ
キ皮膜の一部が剥離した。さらに、このものの20
℃における比抵抗は1.4Ωcm、抵抗増大倍率は104.2
倍であつた。Comparative Example 1 The tensile peel strength of a test piece plated in the same manner as in Example 1 but not pressure-bonded was measured and found to be 0.18 Kg/cm. Also,
A part of the plating film peeled off due to heat shock from 230°C to 20°C. Additionally, 20 of this
Specific resistance at °C is 1.4Ωcm, resistance increase factor is 10 4.2
It was twice as hot.
実施例 ２
実施例１におけるクロム混酸によりエツチング
処理を８分間としたほかは、実施例１と同様にし
た。ここで得られた試験片の引張剥離強度は0.75
Kg／cmであり、ヒートシヨツクによるメツキ皮膜
の剥離はみられなかつた。また、このものの20℃
における比抵抗は1.4Ωcmであり、抵抗増大倍率
は104.2倍であつた。Example 2 The same procedure as in Example 1 was carried out except that the etching treatment with chromium mixed acid was changed to 8 minutes. The tensile peel strength of the test piece obtained here was 0.75
Kg/cm, and no peeling of the plating film due to heat shock was observed. Also, 20℃ of this
The specific resistance was 1.4 Ωcm, and the resistance increase factor was 10 4.2 times.
比較例 ２
実施例２と同様にメツキを施した試験片に圧着
処理を施さなかつたものにつき、引張剥離強度を
測定したところ、0.08Kg／cmであつた。また、
230℃から20℃のヒートシヨツクにより、メツキ
皮膜の一部が剥離した。さらに、20℃における比
抵抗は1.35Ωcmであり、抵抗増大倍率は104.2であ
つた。Comparative Example 2 The tensile peel strength of a test piece plated in the same manner as in Example 2 but not pressure-bonded was measured and found to be 0.08 Kg/cm. Also,
A part of the plating film peeled off due to the heat shock at 230°C to 20°C. Furthermore, the specific resistance at 20°C was 1.35 Ωcm, and the resistance increase factor was 104.2 .
［発明の効果］
以上、説明した如く、本発明の方法で得られた
高分子抵抗体は、メツキ皮膜と成形体の密着強度
が大きく、ヒートシヨツクを受けても密着強度が
低下せず、しかも室温下における抵抗値も小さ
い。[Effects of the Invention] As explained above, the polymer resistor obtained by the method of the present invention has a high adhesion strength between the plating film and the molded body, and the adhesion strength does not decrease even when subjected to heat shock. The resistance value at room temperature is also small.
したがつて、本発明の製造法は、電気・電子機
器等に使用される正温度特性素子の製造に適用し
て有効である。 Therefore, the manufacturing method of the present invention is effective when applied to manufacturing positive temperature characteristic elements used in electrical/electronic equipment and the like.
Claims (1)
填材10〜60重量％との混練組成物の成形体の表面
に、エツチング処理を施した後、該成形体の表面
に電気メツキもしくは無電解メツキ処理を施して
メツキ皮膜を形成し、ついで、該結晶性高分子重
合体の結晶化温度以上の温度において、該成形体
のメツキ皮膜上に圧力を加えることを特徴とする
高分子抵抗体の製造法。 ２ 該結晶性高分子重合体がポリエチレンである
特許請求の範囲第１項記載の高分子抵抗体の製造
法。 ３ 該導電性充填材がカーボンブラツクである特
許請求の範囲第１項記載の高分子抵抗体の製造
法。 ４ 該エツチング処理が高分子組成物成形体表面
に導電性充填材が露出するまで行なう処理である
特許請求の範囲第１項記載の高分子抵抗体の製造
法。 ５ 該メツキ皮膜がニツケル、スズ、銅、クロ
ム、銀の群から選ばれる少なくとも１種の金属か
らなる特許請求の範囲第１項記載の高分子抵抗体
の製造法。 ６ 該メツキ皮膜の膜厚が0.1μｍ以上である特許
請求の範囲第１項記載の高分子抵抗体の製造法。 ７ 該メツキ皮膜に加える圧力が１〜200Kg／
cm2・Ｇである特許請求の範囲第１項記載の高分子
抵抗体の製造法。[Scope of Claims] 1. After etching the surface of a molded body of a kneaded composition of 40 to 90% by weight of a crystalline polymer and 10 to 60% by weight of a conductive filler, the molded body A plating film is formed on the surface of the molded article by electroplating or electroless plating, and then pressure is applied on the plating film of the molded product at a temperature higher than the crystallization temperature of the crystalline polymer. Characteristic manufacturing method of polymer resistor. 2. The method for producing a polymer resistor according to claim 1, wherein the crystalline polymer is polyethylene. 3. The method of manufacturing a polymer resistor according to claim 1, wherein the conductive filler is carbon black. 4. The method for producing a polymer resistor according to claim 1, wherein the etching treatment is performed until the conductive filler is exposed on the surface of the molded polymer composition. 5. The method of manufacturing a polymer resistor according to claim 1, wherein the plating film is made of at least one metal selected from the group of nickel, tin, copper, chromium, and silver. 6. The method for manufacturing a polymer resistor according to claim 1, wherein the plating film has a thickness of 0.1 μm or more. 7 The pressure applied to the plating film is 1 to 200 kg/
cm 2 ·G, the method for producing a polymer resistor according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10155085A JPS61260606A (en) | 1985-05-15 | 1985-05-15 | Manufacture of high molecular resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10155085A JPS61260606A (en) | 1985-05-15 | 1985-05-15 | Manufacture of high molecular resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61260606A JPS61260606A (en) | 1986-11-18 |
| JPH043083B2 true JPH043083B2 (en) | 1992-01-22 |
Family
ID=14303535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10155085A Granted JPS61260606A (en) | 1985-05-15 | 1985-05-15 | Manufacture of high molecular resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61260606A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3214546B2 (en) * | 1996-11-08 | 2001-10-02 | ティーディーケイ株式会社 | Organic positive temperature coefficient thermistor manufacturing method and organic positive temperature coefficient thermistor |
-
1985
- 1985-05-15 JP JP10155085A patent/JPS61260606A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61260606A (en) | 1986-11-18 |
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