JPH04313816A - Record erasing method and device for optical information recording medium - Google Patents
Record erasing method and device for optical information recording mediumInfo
- Publication number
- JPH04313816A JPH04313816A JP3079614A JP7961491A JPH04313816A JP H04313816 A JPH04313816 A JP H04313816A JP 3079614 A JP3079614 A JP 3079614A JP 7961491 A JP7961491 A JP 7961491A JP H04313816 A JPH04313816 A JP H04313816A
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- JP
- Japan
- Prior art keywords
- recording
- erasing
- light beam
- level
- optical information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Optical Recording Or Reproduction (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は書き換え可能な光学的情
報記録媒体に係り、とくに高い消去比を得ることにより
C/NあるいはS/N等を向上することのできる光学的
情報記録媒体の記録消去装置と記録消去方法に関する。[Field of Industrial Application] The present invention relates to a rewritable optical information recording medium, and in particular to recording of an optical information recording medium that can improve C/N or S/N by obtaining a high erasure ratio. This article relates to an erasing device and a recording erasing method.
【0002】0002
【従来の技術】光ディスク等の光学的情報記録媒体はレ
ーザ光等の光ビ−ムを該媒体に照射しその反射光あるい
は透過光を検出することにより情報を読みだしている。
また、情報を記録あるいは消去する場合には例えばレー
ザ光を照射して該媒体の構造状態を物理的に変化させる
ようにしている。このような情報記録媒体として非晶質
状態と結晶状態の異なる2種の構造状態をとりうるカル
コゲン化物が知られている。カルコゲン化物では光ビ−
ムの照射により融点以上にして急冷することにより非晶
質状態が得られ、また、結晶化温度または融点以上に加
熱して徐冷することにより結晶状態が得られる。すなわ
ち、急冷または徐冷等の冷却方法の違いにより非晶質状
態または結晶状態が得られる。2. Description of the Related Art Information is read from optical information recording media such as optical disks by irradiating the medium with a light beam such as a laser beam and detecting the reflected or transmitted light. Furthermore, when recording or erasing information, the structural state of the medium is physically changed by irradiating it with laser light, for example. As such an information recording medium, chalcogenides are known which can take two different structural states, an amorphous state and a crystalline state. For chalcogenides, light beams
An amorphous state can be obtained by heating the material to a temperature above the melting point by irradiation with a fluorine and then rapidly cooling it, and a crystalline state can be obtained by heating the material to the crystallization temperature or above the melting point and cooling it slowly. That is, an amorphous state or a crystalline state can be obtained depending on the cooling method such as rapid cooling or slow cooling.
【0003】電子情報通信学会技術研究報告である信学
技報Vol.87.No.310CPM87−88〜9
0にはオ−バライト法と称されている単一レ−ザビ−ム
の照射レベルを変えてデ−タを前歴の上に重ね書きする
方法が開示されている。この方法では温度を融点以上に
高めると冷却時の温度勾配が大きくなるので(急冷とな
る)非晶質状態が得られ、温度を融点以下にすると冷却
時の温度勾配が下がって除冷状態となるのでこれにより
結晶状態を得るようしている。したがって、デ−タの1
レベルではレ−ザビ−ムの出力を高めて温度を融点以上
にし、デ−タの0レベルでは同出力を低めて温度を融点
以下にして前デ−タの上に重ね書き(オ−バライト)す
るようにしている。[0003] IEICE technical report Vol. 87. No. 310CPM87-88~9
0 discloses a method called the overwrite method in which data is overwritten on previous history by changing the irradiation level of a single laser beam. In this method, when the temperature is raised above the melting point, the temperature gradient during cooling increases (quick cooling), resulting in an amorphous state; when the temperature is lowered below the melting point, the temperature gradient during cooling decreases, resulting in a slow cooling state. This is how a crystalline state is obtained. Therefore, 1 of the data
At level, the laser beam output is increased to bring the temperature above the melting point, and at data level 0, the same output is lowered to bring the temperature below the melting point and overwrite the previous data (overwrite). I try to do that.
【0004】また特開平1−311422号公報および
特開平2−5238号公報には、上記結晶状態を得るた
めにレ−ザのパワ−レベルを一時的に高めて記録媒体を
一旦溶融させたのちに除冷して上記オ−バライト法にお
ける消去比を向上させる方法が開示されている。また、
1978年発行の電子情報通信学会技術研究報告、信学
技報Vol.87.No.310CPM87−88、2
7頁には、マルチビ−ムによる記録消去方法が開示され
ている。この方法では高い消去比を得るために、図2に
示すように消去を行う場合にはまず円形ビ−ム22を照
射してその温度を融点Tm以上にし、その冷却途中で楕
円ビ−ム23を照射して結晶化温度以上で、かつ融点以
下の温度にして結晶化を促進するようにしていた。また
、記録の際は円ビ−ム21照射してその部分を非晶質す
るようにしていた。[0004] Furthermore, in JP-A-1-311422 and JP-A-2-5238, in order to obtain the above-mentioned crystalline state, the power level of the laser is temporarily increased to temporarily melt the recording medium, and then the recording medium is melted. A method for improving the erasure ratio in the above-mentioned overwriting method by gradually cooling the film is disclosed. Also,
IEICE technical research report published in 1978, IEICE Technical Report Vol. 87. No. 310CPM87-88, 2
On page 7, a method for erasing records using multi-beams is disclosed. In this method, in order to obtain a high erasure ratio, as shown in FIG. was irradiated to a temperature above the crystallization temperature and below the melting point to promote crystallization. Further, during recording, the area was irradiated with a circular beam 21 to make the area amorphous.
【0005】また、特開平1−138620号公報、特
開平2−177131号公報等には2個の円形ビ−ムを
用いる方法が開示されている。この方法では図3に示す
ように、最大パワーレベルが同一の消去ビ−ム12と記
録ビ−ム11とを用意し、消去ビ−ム12により温度を
溶点以上に高めて情報トラックを非晶質化し、デ−タの
0レベルを記録する場合には結晶化温度Txより僅かに
高めてその後の徐冷効果により当該部分を結晶化するよ
うにしている。Further, methods using two circular beams are disclosed in JP-A-1-138620 and JP-A-2-177131. In this method, as shown in Fig. 3, an erasing beam 12 and a recording beam 11 with the same maximum power level are prepared, and the temperature of the erasing beam 12 is raised above the melting point to erase information tracks. When crystallizing and recording 0 level data, the temperature is raised slightly above the crystallization temperature Tx, and the subsequent slow cooling effect crystallizes the relevant portion.
【0006】[0006]
【発明が解決しようとする課題】上記オーバライト法に
は十分な消去比が得らないという問題があった。この問
題の第1の原因は消去レベルのレ−ザ照射後の冷却速度
が早すぎて非晶質部の結晶化が十分に進まず消し残り(
前歴の影響)が生ずることにあった。また第2の原因と
しては、非晶質部と結晶部の光の吸収率や熱伝導率等が
異なるため消去における加熱過程やその後の冷却過程が
前歴に応じて異なり、これにより消し残り(前歴の影響
)が生ずることにあった。[Problems to be Solved by the Invention] The above-mentioned overwriting method has a problem in that a sufficient erasure ratio cannot be obtained. The first cause of this problem is that the cooling rate after laser irradiation at the erase level is too fast, and the crystallization of the amorphous part does not progress sufficiently, leaving the erased area (
(influence of previous history) may occur. The second reason is that because the light absorption rate and thermal conductivity of the amorphous and crystalline parts are different, the heating process during erasing and the subsequent cooling process differ depending on the previous history. impact).
【0007】上記第2の原因の対策として、溶点以上で
はあるが記録温度よりは十分に低い温度に加熱して溶融
すれば消去部分を完全に消去できるのであるが、その後
の結晶化が不十分で実際にはほとんどが非晶質となって
しまうため消去部分と記録部分間の信号レベル比が十分
に得られず採用することができない。また上記図2のマ
ルチビ−ム法では楕円ビ−ム23の効果によって良好に
結晶化された消去部を得ることができるものの、光学ヘ
ッドが複雑化するという問題があった。As a countermeasure for the second cause, the erased area can be completely erased by heating and melting it to a temperature above the melting point but sufficiently lower than the recording temperature, but the subsequent crystallization will not occur. However, in reality, most of the material becomes amorphous, so that a sufficient signal level ratio between the erased portion and the recorded portion cannot be obtained and cannot be used. Further, although the multi-beam method shown in FIG. 2 can obtain a well-crystallized erased portion due to the effect of the elliptical beam 23, there is a problem in that the optical head becomes complicated.
【0008】また図3の2ビ−ム法においては、消去後
の部位を低レベルの記録ビ−ム11の照射により十分に
結晶化できないため、上記オ−バ−ライト法の場合と同
様に1レベルと0レベル間のレベル比が不十分という問
題があった。すなわち、図3の2ビ−ム法においては、
消去ビ−ム12のパワ−レベルを記録ビ−ム11と同じ
にして記録部全体を溶融させるため、図4の(A)に示
すように非晶質部の幅が広くなる。その後、書き換えを
行う際に記録ビ−ムのパワ−分布がガウス形であるため
、0レベルデ−タのパワ−レベルが高い場合には図4(
B)に示すように情報トラック10の中央部が非晶質の
まま残留し、また、0レベルデ−タのパワ−レベルを低
めると同図(C)に示すように周辺部の結晶化が進まな
いため非晶質として残留する。Furthermore, in the two-beam method shown in FIG. 3, since the area after erasing cannot be sufficiently crystallized by irradiation with the low-level recording beam 11, similar to the above-mentioned overwrite method, There was a problem that the level ratio between the 1st level and the 0th level was insufficient. That is, in the two-beam method shown in Fig. 3,
Since the power level of the erasing beam 12 is made the same as that of the recording beam 11 to melt the entire recorded area, the width of the amorphous area becomes wider as shown in FIG. 4(A). After that, when rewriting is performed, the power distribution of the recording beam is Gaussian, so if the power level of the 0-level data is high,
As shown in (B), the central part of the information track 10 remains amorphous, and when the power level of the 0-level data is lowered, the peripheral part becomes crystallized as shown in (C) of the same figure. Because it is not present, it remains amorphous.
【0009】本発明の目的は、上記図4の(B)および
(C)に示したような記録の0レベルデ−タ部における
非晶質部分の残留を防止することにあり、これにより構
造の比較的簡単な2ビ−ム用光学ヘッドを用いて高い消
去比率を得ることのできる記録消去方法および装置を提
供することにある。An object of the present invention is to prevent the amorphous portion from remaining in the 0 level data portion of the recording as shown in FIGS. 4(B) and 4(C), thereby improving the structure. It is an object of the present invention to provide a recording/erasing method and apparatus that can obtain a high erasing ratio using a relatively simple two-beam optical head.
【0010】0010
【課題を解決するための手段】上記課題を解決するため
に、消去時の光ビ−ムのパワーレベルPeを信号のハイ
レベル記録時の上記光ビ−ムのパワーレベルPhと信号
のロ−レベル記録時の上記光ビ−ムのパワーレベルPl
の中間のレベル、すなわちPl<Pe<Phとなるよう
に設定する。また、上記消去用光ビ−ムを繰返し周波数
が上記信号の記録周波数以上の脈流光とし、そのパワー
レベルPeのハイレベルを上記記録時光ビ−ムのパワー
レベルPh以下としそのロ−レベルを上記記録時光ビ−
ムのパワーレベルPl以上となるようにする。また、上
記消去時の光ビ−ムの波長を上記記録時の光ビ−ムの波
長より大きくする。また、上記消去時の光ビ−ムを同一
トラック部分に複数回照射するようにする。上記各消去
用光ビ−ムの照射により相変化記録膜が非晶質と結晶の
混在状態になるようにする。[Means for Solving the Problem] In order to solve the above problem, the power level Pe of the light beam at the time of erasing is set to the power level Ph of the light beam at the time of high level recording of the signal and the low level of the signal. Power level Pl of the above light beam during level recording
is set to an intermediate level, that is, Pl<Pe<Ph. Further, the erasing light beam is a pulsating light whose repetition frequency is higher than the recording frequency of the signal, and its high level Pe is set to be lower than the power level Ph of the recording light beam, and its low level is set as above. Optical beam during recording
so that the power level of the system is equal to or higher than Pl. Further, the wavelength of the light beam during erasing is made larger than the wavelength of the light beam during recording. Furthermore, the same track portion is irradiated with the light beam during erasing multiple times. The phase change recording film is brought into a mixed state of amorphous and crystalline by irradiation with each of the above-mentioned erasing light beams.
【0011】[0011]
【作用】上記各消去用光ビ−ムの照射により光ディスク
の相変化記録膜を非晶質と結晶の混在状態にし、また、
上記消去用光ビ−ムの波長を上記記録時の光ビ−ムの波
長より大きくすることにより消去用光ビ−ムのスポット
サイズを記録用光ビ−ムのスポットサイズより大きくす
る。また、上記消去用光ビ−ムを同一トラック部分に複
数回照射することにより比較的相変化しにくい相変化記
録膜を非晶質と結晶の混在状態にする。[Operation] By irradiating each of the above erasing light beams, the phase change recording film of the optical disc is brought into a mixed state of amorphous and crystalline, and
By making the wavelength of the erasing light beam larger than the wavelength of the light beam during recording, the spot size of the erasing light beam is made larger than the spot size of the recording light beam. Further, by irradiating the same track portion with the erasing light beam a plurality of times, the phase change recording film, which is relatively resistant to phase change, is brought into a mixed state of amorphous and crystalline materials.
【0012】0012
【実施例】まず、本発明による記録消去方法の原理とそ
の効果につき図1および図5、6を用いて説明する。本
発明では図5(A)に示すように消去後における情報ト
ラック10の非晶質部の幅を狭くすると同時に、その部
分を結晶と非晶質の混在した状態なるようにする。この
ようにすると記録の際にはデ−タの1レベルでは従来の
場合と同様に情報トラックを十分に非晶質化することが
でき、また、デ−タの0レベルでは情報トラック10の
非晶質領域が結晶と非晶質の混在した状態なうえその幅
が狭いためこれを十分に結晶化することができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the principle and effects of the recording and erasing method according to the present invention will be explained with reference to FIG. 1 and FIGS. 5 and 6. In the present invention, as shown in FIG. 5A, the width of the amorphous portion of the information track 10 after erasing is narrowed, and at the same time, that portion is made to have a mixed state of crystal and amorphous. In this way, during recording, the information track can be made sufficiently amorphous at the 1st level of data, as in the conventional case, and at the 0th level of data, the information track 10 can be rendered amorphous. Since the crystalline region is a mixture of crystals and amorphous and its width is narrow, it can be sufficiently crystallized.
【0013】このため本発明では図1に示すように、消
去ビ−ム12と記録ビ−ム11の(照射)パワ−レベル
を制御するようにする。消去ビ−ム12を照射した後に
記録ビ−ム11を照射する。すなわち、記録ビ−ム11
のパワ−レベルPhはデ−タの1レベルに対応し、情報
トラックを十分に非晶質化することができレベルとなっ
ている。また、同Plはデ−タの0レベルに対応する。
消去ビ−ム12のパワ−レベルPeは上記PhとPlの
中間、すなわち、Pl<Pe<Phに設定する。また、
再生ビ−ムPrは相変化記録膜が変化しないような低い
パワ−レベルに設定する。Therefore, in the present invention, as shown in FIG. 1, the (irradiation) power levels of the erasing beam 12 and the recording beam 11 are controlled. After the erasing beam 12 is irradiated, the recording beam 11 is irradiated. That is, the recording beam 11
The power level Ph corresponds to one level of data and is a level at which the information track can be sufficiently amorphized. Further, Pl corresponds to the 0 level of data. The power level Pe of the erasing beam 12 is set between the above-mentioned Ph and Pl, that is, Pl<Pe<Ph. Also,
The reproduction beam Pr is set at a low power level so that the phase change recording film does not change.
【0014】図6は記録膜の温度変化の様子を示す模式
図である。消去ビ−ム12の照射により記録膜の温度は
融点Tmを若干超えるものの記録ビ−ムPh照射時の温
度よりは低いため、図5に示したように情報トラック1
0の中心部は急冷効果により非晶質が多くなり、周辺部
は徐冷あるいは融点には達しないため結晶が多い状態と
なる。この結果、書き換え前のデ−タはほとんど消失し
、また、書き換え前に非晶質化であった部分は部分的に
結晶化され、また、結晶であった部分の一部は非晶質化
された状態となる。すなわち、消去パワーPeは記録膜
の全てを溶融するものではなく、非晶質部分と結晶部分
での吸収率等の特性の差が少なくなる程度にする。FIG. 6 is a schematic diagram showing how the temperature of the recording film changes. The temperature of the recording film due to the irradiation with the erasing beam 12 slightly exceeds the melting point Tm, but is lower than the temperature at the time of irradiation with the recording beam Ph. Therefore, as shown in FIG.
The central part of 0 becomes amorphous due to the rapid cooling effect, and the peripheral part is slowly cooled or does not reach the melting point, so it becomes a state in which there are many crystals. As a result, most of the data before rewriting is lost, the part that was amorphous before rewriting is partially crystallized, and the part that was crystalline is now amorphous. The state will be as follows. That is, the erasing power Pe is not set to melt all of the recording film, but is set to such an extent that the difference in characteristics such as absorption rate between the amorphous portion and the crystalline portion is reduced.
【0015】また、低記録パワ−レベルPlの照射時で
は記録膜の温度は結晶化温度以上でかつ融点以下となる
ので記録膜は除冷効果により効果的に結晶化される。書
き換え前に非晶質であったところは最も結晶化されにく
いが、ここに上記Peの消去ビ−ムとPlの記録ビ−ム
を照射することにより結晶化が2重に促進され結果、低
記録パワ−レベルPlの照射部分が前歴の影響を受けに
くくなって高消去比と高C/Nとが同時に得られるので
ある。高記録パワ−レベルPhの照射時には記録膜の温
度は十分に融点Tm以上となり急冷過程で非晶質となる
。Furthermore, during irradiation at a low recording power level Pl, the temperature of the recording film is higher than the crystallization temperature and lower than the melting point, so that the recording film is effectively crystallized by the gradual cooling effect. Areas that were amorphous before rewriting are the most difficult to crystallize, but by irradiating these areas with the Pe erasing beam and the Pl recording beam, crystallization is doubly promoted, resulting in a lower The irradiated portion of the recording power level Pl becomes less susceptible to the influence of the previous history, and a high erasing ratio and high C/N can be obtained at the same time. When irradiated with a high recording power level Ph, the temperature of the recording film becomes sufficiently higher than the melting point Tm, and becomes amorphous during the rapid cooling process.
【0016】〔実施例 1〕図8および図9は上記本
発明による光ディスクの消去並びに記録方法の効果を示
す実験デ−タである。図7は実験に用いた記録膜が結晶
−非晶質間で可逆的に相変化するInSbTe系の光デ
ィスクの部分断面図である。ポリカ−ボネ−ト基板13
の上に膜厚70nmのZnS−SiO2よりなる第1干
渉膜14、膜厚30nmのIn3SbTe2よりなる相
変化記録膜15、膜厚110nmのZnS−SiO2よ
りなる第2干渉膜16、膜厚120nmのNi−Crよ
りなる反射膜17、膜厚30μmの紫外線硬化樹脂より
なる有機保護膜18等が積層されている。また、光ビ−
ムは下側より照射され記録膜15の状態を変化させる。[Example 1] FIGS. 8 and 9 show experimental data showing the effects of the optical disc erasing and recording method according to the present invention. FIG. 7 is a partial cross-sectional view of an InSbTe-based optical disk in which the recording film used in the experiment undergoes a reversible phase change between crystalline and amorphous states. Polycarbonate substrate 13
A first interference film 14 made of ZnS-SiO2 with a film thickness of 70 nm, a phase change recording film 15 made of In3SbTe2 with a film thickness of 30 nm, a second interference film 16 made of ZnS-SiO2 with a film thickness of 110 nm, and a second interference film 16 made of ZnS-SiO2 with a film thickness of 120 nm are placed on top of the film. A reflective film 17 made of Ni--Cr, an organic protective film 18 made of ultraviolet curing resin having a film thickness of 30 μm, and the like are laminated. Also, the light beam
The beam is irradiated from below and changes the state of the recording film 15.
【0017】また、本発明は上記光ディスクにに限られ
るものではなく、GeTe系,GeSbTe系,GeS
bTeCo系,InSe系,SbSeBi系,TeSb
Se系,SbTe系,InSbSe系,GeSbTeS
e系,GeSnTeO系等の相変化記録膜を用いた光デ
ィスクや、結晶−結晶間の相変化記録膜を用いた光ディ
スク等にも適用することができる。Furthermore, the present invention is not limited to the above-mentioned optical disks, but also includes GeTe-based, GeSbTe-based, GeS
bTeCo series, InSe series, SbSeBi series, TeSb
Se series, SbTe series, InSbSe series, GeSbTeS
It can also be applied to optical discs using phase change recording films such as e-based and GeSnTeO-based, and optical discs using crystal-to-crystal phase change recording films.
【0018】図8および図9においては高記録パワーレ
ベルPhを13mW、低記録パワーPlを6mWに固定
して消去パワーレベルPeを変化させ、図8では記録し
た信号レベルと消え残りレベル等を調べ、図9では図8
の結果をC/N比と消去比でまとめている。なお、記録
ビ−ムおよび消去ビ−ムの波長は830nm、対物レン
ズのNAは0.6、媒体移動速度は13m/sである。In FIGS. 8 and 9, the high recording power level Ph is fixed at 13 mW, the low recording power Pl is fixed at 6 mW, and the erasing power level Pe is varied, and in FIG. 8, the recorded signal level and the unerased level are examined. , in Figure 9, Figure 8
The results are summarized in terms of C/N ratio and cancellation ratio. The wavelength of the recording beam and the erasing beam is 830 nm, the NA of the objective lens is 0.6, and the medium moving speed is 13 m/s.
【0019】図8において、まず前歴として周波数7M
Hzのデ−タを記録し、次いでこれを消去ビ−ムにより
消去する。同図の曲線100は上記消去後に測定される
7MHzの消し残り成分のレベルである。消去パワーP
eを増加させると非晶質化が進むため上記消し残りレベ
ルは低下する。次いで8MHzのデ−タを記録するとそ
の再生出力レベルは101のようになる。消去パワーP
eが略10mW以上になると消去時に生成された非晶質
部が増大しているためデ−タの低レベル(0レベル)に
おける結晶化が進みにくくなって信号の再生出力レベル
が減少し始める。In FIG. 8, first, the frequency 7M is used as the previous history.
Hz data is recorded and then erased by an erasing beam. A curve 100 in the figure is the level of the 7 MHz unerased component measured after the above erasing. Erase power P
As e increases, the amorphization progresses and the unerased level decreases. Next, when 8 MHz data is recorded, the reproduction output level becomes 101. Erase power P
When e becomes approximately 10 mW or more, the amorphous portion generated during erasing increases, making it difficult for data to crystallize at a low level (0 level), and the reproduction output level of the signal begins to decrease.
【0020】また、上記8MHzの再生出力中に混入す
る7MHzの消え残り成分のレベルは曲線102に示す
ように消去パワーPeと共に減少しPeが略10mW以
上では非晶質部の増大により飽和する。光ディスクとし
ては前歴を十分に消去した上で記録レベルを最大にする
ことが最も良い訳であるから、上記図8の結果より、消
去パワーPeを略10mW弱に設定するのが良いことに
なる。Further, the level of the 7 MHz unerased component mixed into the 8 MHz reproduced output decreases with the erasing power Pe, as shown by a curve 102, and becomes saturated when Pe is approximately 10 mW or more due to an increase in the amorphous portion. Since it is best for an optical disc to maximize the recording level after sufficiently erasing the previous history, the results shown in FIG.
【0021】図9は同様にしてC/N比と消去比を測定
した結果であり、上記消去パワーPeが略10mWにて
最大の消去比35dBが得られることを示している。ま
た略60dB以上のC/Nが得られことがわかる。これ
らのレベルはデ−タはもちろんアナログビデオ用として
も十分過ぎる程に良好な値である。以上より、図1で説
明したように消去パワーPeを記録のハイレベルPhと
同ロ−レベルPlの中間のレベルに設定することにより
消去比とC/N比を最大にすることができるのである。
また上記消去において、消去光の波長を記録光の波長よ
りも長くすると消去ビ−ムの光スポット径が記録ビ−ム
のそれより大きくなるので、前歴部分を十分にカバ−し
て消去するようにすることができる。FIG. 9 shows the results of similarly measuring the C/N ratio and the erasure ratio, and shows that the maximum erasure ratio of 35 dB can be obtained when the erasure power Pe is about 10 mW. It is also seen that a C/N of approximately 60 dB or more can be obtained. These levels are more than sufficient for data as well as analog video. From the above, as explained in FIG. 1, the erasure ratio and C/N ratio can be maximized by setting the erasure power Pe to a level intermediate between the recording high level Ph and the same low level Pl. . In addition, in the above erasing process, if the wavelength of the erasing light is made longer than the wavelength of the recording light, the optical spot diameter of the erasing beam becomes larger than that of the recording beam, so it is necessary to sufficiently cover the previous history part when erasing. It can be done.
【0022】〔実施例 2〕上記実施例1においては
、消去パワーレベルPeを9mW一定としたのであるが
、上記Peを記録信号周波数よりも高い周波数で変調し
そのパワーレベルを平均的に記録のハイレベルPhと同
ロ−レベルの中間値に設定するようにすることもできる
。
信号を記録する際にはそのハイレベルPhの期間は相変
化膜を十分に非晶質化できる程度の長さとし、ロ−レベ
ルPlは相変化膜を十分に非晶質化できる程度の長さに
する。このようにして定められた記録の最高周波数より
も高い周波数にて消去用レベルPeを変調し、かつ、そ
のハイレベルを上記Phより低くし、また、そのロ−レ
ベルを上記Plより高くすれば、消去時の相変化膜温度
は時定数的に余り変化しないため、上記消去パワーレベ
ルPeを一定とした場合と略同様の効果が得られるので
ある。[Example 2] In the above-mentioned Example 1, the erase power level Pe was kept constant at 9 mW, but the above-mentioned Pe is modulated at a frequency higher than the recording signal frequency, and the power level is adjusted to the average recording signal frequency. It is also possible to set it to an intermediate value between the high level Ph and the same low level. When recording a signal, the period of the high level Ph is long enough to make the phase change film sufficiently amorphous, and the low level Pl is long enough to make the phase change film sufficiently amorphous. Make it. By modulating the erasing level Pe at a frequency higher than the maximum recording frequency determined in this way, and making the high level lower than the above Ph, and the low level higher than the above Pl, Since the phase change film temperature during erasing does not change much in terms of time constant, substantially the same effect as when the erasing power level Pe is kept constant can be obtained.
【0023】例えば記録条件を実施例1と同様にし、消
去ビ−ムを低パワーレベル7mWと高パワーレベル11
mW間で周波数50MHzにて変調するようにした場合
、書き換え後の消去比33dB、C/N60dBが得ら
れた。なお、上記消去ビ−ム変調周波数を記録信号周波
数に近ずけると消去比が低下するので、少なくとも記録
信号の最高周波数の2倍以上とすることが好ましい。
また、消去ビ−ムの照射回数を複数回の増やすと消去比
をさらに向上させることができる。For example, the recording conditions are the same as in Example 1, and the erasing beam is set to a low power level of 7 mW and a high power level of 11 mW.
When modulating between mW at a frequency of 50 MHz, an erasure ratio of 33 dB and a C/N of 60 dB after rewriting were obtained. It should be noted that if the erasure beam modulation frequency is brought closer to the recording signal frequency, the erasure ratio will decrease, so it is preferable to set it to at least twice the highest frequency of the recording signal. Furthermore, the erasing ratio can be further improved by increasing the number of times the erasing beam is irradiated.
【0024】〔実施例 3〕図10〜12は上記本発
明の記録消去を行う光ディスク装置の構成を示すブロッ
ク図である。図10においては、スピンドルモ−タ29
により回転される光ディスク27に2個の光ビ−ム、す
なわち消去ビ−ム12と記録ビ−ム11を同時に発生す
ることのできる2ビ−ム光ヘッド28を用いて上記本発
明の記録消去を行う。フォ−カス・トラッキング制御回
路30はシステムコントロ−ラ34からの指令信号基づ
いて光ヘッド28のフォ−カス・トラッキングを制御す
る。また、システムコントロ−ラ34は消去パワー制御
回路31と記録パワー制御回路32に指令信号を送り2
ビ−ム光ヘッド28の光ビ−ムの上記記録と録消レベル
の等を制御する。[Embodiment 3] FIGS. 10 to 12 are block diagrams showing the configuration of an optical disc device for performing recording and erasing according to the present invention. In FIG. 10, the spindle motor 29
The recording and erasing of the present invention is performed using a two-beam optical head 28 that can simultaneously generate two light beams, that is, an erasing beam 12 and a recording beam 11, on an optical disk 27 rotated by a I do. A focus/tracking control circuit 30 controls focus/tracking of the optical head 28 based on command signals from a system controller 34. The system controller 34 also sends command signals to the erase power control circuit 31 and the recording power control circuit 32.
The recording and recording level of the light beam of the beam optical head 28 is controlled.
【0025】記録パワー制御回路32は上記指令号に従
って高記録レーザパワーレベルPhおよび低記録レーザ
パワーレベルPlを設定し、2ビ−ム光ヘッド28内の
記録用レーザの出力を該制御する。同様に消去パワー制
御回路31は2ビ−ム光ヘッド28内の消去用レーザの
パワーレベルPeを上記Pl<Pe<Phの関係に設定
する。例えば上記各レベルを、Pl=6mW,Ph=1
3mW,Pe=10mWとして消去用レーザと記録用レ
ーザとを同時に発振させてオーバライト(重ね書き)を
行なう。また、消去パワー制御回路31に高周波発振回
路とレーザパワーレベル設定回路を付加し、消去レーザ
パワーPeを低消去パワーレベル8mW、高消去パワー
レベル12mWの周波数40MHzの信号としても良好
な記録消去特性を得ることができる。The recording power control circuit 32 sets the high recording laser power level Ph and the low recording laser power level Pl in accordance with the above-mentioned command numbers, and controls the output of the recording laser in the two-beam optical head 28 accordingly. Similarly, the erasing power control circuit 31 sets the power level Pe of the erasing laser in the two-beam optical head 28 to the relationship Pl<Pe<Ph. For example, the above levels are Pl=6mW, Ph=1
Overwriting is performed by simultaneously oscillating the erasing laser and the recording laser at 3 mW and Pe=10 mW. In addition, a high frequency oscillation circuit and a laser power level setting circuit are added to the erase power control circuit 31, and even when the erase laser power Pe is a signal of a frequency of 40 MHz with a low erase power level of 8 mW and a high erase power level of 12 mW, good recording erase characteristics can be achieved. Obtainable.
【0026】図13は上記2ビ−ム光ヘッド28の構成
の一例を示す図である。例えば半導体レ−ザアレイ51
内の1個のレ−ザの出力光を点線のようにコリメ−タレ
ンズ52、ハ−フミラ−53、対物レンズ54を介して
光ディスク27上に照射してこれを消去ビ−ム12とす
ると、他のレ−ザの出力光は実線のように記録ビ−ム1
1として用いられる。FIG. 13 is a diagram showing an example of the configuration of the two-beam optical head 28. As shown in FIG. For example, the semiconductor laser array 51
If the output light of one of the lasers is irradiated onto the optical disk 27 through the collimator lens 52, half mirror 53, and objective lens 54 as shown by the dotted line, this becomes the erasing beam 12. The output light of the other lasers is the recording beam 1 as shown by the solid line.
1.
【0027】図11は2個の1ビ−ム光ヘッド40及び
41により上記消去と記録を行なう本発明の記録消去装
置実施例のブロック図である。消去用光ヘッド41の出
力は消去パワ−制御回路31により制御され、記録用光
ヘッド40の出力は記録パワ−制御回路32により制御
され同様のオーバライト特性や記録消去特性が得られる
。FIG. 11 is a block diagram of an embodiment of the recording/erasing apparatus of the present invention in which two one-beam optical heads 40 and 41 perform the above-mentioned erasing and recording. The output of the erasing optical head 41 is controlled by the erasing power control circuit 31, and the output of the recording optical head 40 is controlled by the recording power control circuit 32, so that similar overwrite characteristics and recording/erasing characteristics can be obtained.
【0028】図12は1ビ−ム光ヘッドにより上記消去
と記録を行なう本発明の記録消去装置実施例のブロック
図である。消去パワ−制御回路31と記録パワ−制御回
路32の出力は記録消去切替回路37により切り替えら
れる。オーバライトはできないが上記と同様な記録消去
特性が得られる。上記本発明の記録消去装置には円形の
記録ビ−ムと消去ビ−ムの他に楕円形等の形状のビ−ム
を用いてもよい。元来半導体レーザの出射ビ−ムは2:
1程度の長円であることが多く、このようなビ−ムを円
形に整形せずに使用することができる。FIG. 12 is a block diagram of an embodiment of the recording/erasing apparatus of the present invention, which performs the above erasing and recording using a one-beam optical head. The outputs of the erasing power control circuit 31 and the recording power control circuit 32 are switched by a recording/erasing switching circuit 37. Although overwriting is not possible, recording/erasing characteristics similar to those described above can be obtained. In addition to the circular recording beam and erasing beam, the recording and erasing device of the present invention may also use an elliptical or other shaped beam. Originally, the output beam of a semiconductor laser was 2:
The beam is often an ellipse of about 1.1 mm, and such a beam can be used without being shaped into a circle.
【0029】また、上記消去ビ−ムの照射により相変化
しにくい相変化膜を有する光ディスクに対しては消去ビ
−ムの照射回数を増やすことにより上記各実施例と同様
な消去効果を得ることができる。例えばこのような相変
化膜を有する静止画用の光ディスクにおいては、消去す
べき静止画部分を容易に指定することができるのでその
部分を所定回数上記消去を繰返し施すようにする。Furthermore, for an optical disk having a phase change film that is difficult to change phase when irradiated with the erasing beam, the same erasing effect as in each of the above embodiments can be obtained by increasing the number of times the erasing beam is irradiated. Can be done. For example, in an optical disk for still images having such a phase change film, it is possible to easily specify a still image portion to be erased, so that the above erasing is repeatedly performed on that portion a predetermined number of times.
【0030】[0030]
【発明の効果】本発明による消去用光ビ−ムの照射によ
り光ディスクの相変化記録膜を非晶質と結晶の混在した
消去状態にし、その後に照射する記録用光ビ−ムのハイ
レベルにて上記消去状態を容易に非晶質化し、同ロ−レ
ベルにて上記消去状態を容易に結晶化記録することがで
きるのでC/Nの高い高画質用書き換え可能光ディスク
装置を提供することができる。さらに、前歴の消え残り
を著しく低減することができるので高い消去比の記録消
去方法を提供することができる。Effects of the Invention: By irradiating the erasing light beam according to the present invention, the phase change recording film of the optical disc is brought into an erasing state in which amorphous and crystalline materials are mixed, and the recording light beam that is irradiated thereafter is at a high level. Since the erased state can be easily amorphized and the erased state can be easily crystallized and recorded at the same low level, it is possible to provide a high-quality rewritable optical disc device with a high C/N. . Furthermore, since it is possible to significantly reduce the amount of the previous history left unerased, it is possible to provide a recording/erasing method with a high erasing ratio.
【図1】本発明による記録消去方法を説明するための図
である。FIG. 1 is a diagram for explaining a recording/erasing method according to the present invention.
【図2】従来の3スポット記録消去方法の説明図である
。FIG. 2 is an explanatory diagram of a conventional three-spot recording/erasing method.
【図3】従来の2スポット記録消去方法の説明図である
。FIG. 3 is an explanatory diagram of a conventional two-spot recording/erasing method.
【図4】従来の2スポット記録消去方法における記録膜
状態の模式図である。FIG. 4 is a schematic diagram of the state of a recording film in a conventional two-spot recording/erasing method.
【図5】本発明における記録膜状態の模式図である。FIG. 5 is a schematic diagram of the state of a recording film in the present invention.
【図6】本発明における記録膜の温度変化の模式図であ
る。FIG. 6 is a schematic diagram of the temperature change of the recording film in the present invention.
【図7】本発明を適用する光ディスクの部分断面図の一
例である。FIG. 7 is an example of a partial cross-sectional view of an optical disc to which the present invention is applied.
【図8】本発明における記録信号と消え残り信号の再生
レベル特性図の一例である。FIG. 8 is an example of a reproduction level characteristic diagram of a recorded signal and an unerased signal in the present invention.
【図9】本発明におけるC.N比と消去比特性図の一例
である。FIG. 9: C. in the present invention. This is an example of an N ratio and erasure ratio characteristic diagram.
【図10】2ビ−ム光ヘッドを用いた本発明の記録消去
装置実施例のブロック図である。FIG. 10 is a block diagram of an embodiment of the recording/erasing device of the present invention using a two-beam optical head.
【図11】2個の1ビ−ム光ヘッドを用いた本発明の記
録消去装置実施例のブロック図である。FIG. 11 is a block diagram of an embodiment of the recording/erasing device of the present invention using two 1-beam optical heads.
【図12】1個の1ビ−ム光ヘッドを用いた本発明の記
録消去装置実施例のブロック図である。FIG. 12 is a block diagram of an embodiment of the recording/erasing device of the present invention using one one-beam optical head.
【図13】2ビ−ム光ヘッドのブロック図である。FIG. 13 is a block diagram of a two-beam optical head.
4 記録部
5 結晶
10 情報トラック
11 記録ビ−ム
12 消去ビ−ム
13 基板
14 第1干渉膜
15 記録膜
16 第2干渉膜
17 反射膜
18 有機保護膜
21 円形ビ−ム
23 楕円ビ−ム
27 光ディスク、
28 2ビ−ム光ヘッド
29 スピンドルモ−タ
30 フォ−カス・トラッキング制御回路31 消
去パワ−制御回路
32 記録パワ−制御回路
33 記録消去制御回路
34 システムコントロ−ル
35 1ビ−ム光ヘッド
37 記録消去切替回路
40 記録用光ヘッド
41 消去用光ヘッド
51 半導体レ−ザアレイ
52 コリメ−トレンズ
53 ハ−フミラ−
54 対物レンズ4 Recording section 5 Crystal 10 Information track 11 Recording beam 12 Erasing beam 13 Substrate 14 First interference film 15 Recording film 16 Second interference film 17 Reflection film 18 Organic protective film 21 Circular beam 23 Elliptical beam 27 Optical disk, 28 2-beam optical head 29 Spindle motor 30 Focus/tracking control circuit 31 Erasing power control circuit 32 Recording power control circuit 33 Recording/erasing control circuit 34 System control 35 1 beam Optical head 37 Recording/erasing switching circuit 40 Recording optical head 41 Erasing optical head 51 Semiconductor laser array 52 Collimator lens 53 Half mirror 54 Objective lens
Claims (8)
にレーザ等の光ビ−ムを照射して信号を記録、消去並び
に再生を行う光学的情報記録媒体の記録消去方法におい
て、消去時の上記光ビ−ムのパワーレベルPeを信号の
ハイレベル記録時の上記光ビ−ムのパワーレベルPhと
信号のロ−レベル記録時の上記光ビ−ムのパワーレベル
Plの中間のレベル、すなわちPl<Pe<Phとなる
ように設定したことを特徴とした光学的情報記録媒体の
記録消去方法。Claim 1. In a recording erasing method for an optical information recording medium in which a phase change recording film on the optical information recording medium is irradiated with a light beam such as a laser to record, erase, and reproduce signals, the phase change recording film on the optical information recording medium is The power level Pe of the light beam is an intermediate level between the power level Ph of the light beam when recording a high level signal and the power level Pl of the light beam when recording a low level signal; In other words, a method for erasing recording on an optical information recording medium characterized by setting Pl<Pe<Ph.
ムを繰返し周波数が上記信号の記録周波数以上である脈
流光とし、そのパワーレベルPeのハイレベルを上記記
録時光ビ−ムのパワーレベルPh以下としそのロ−レベ
ルを上記記録時光ビ−ムのパワーレベルPl以上とした
ことを特徴とした光学的情報記録媒体の記録消去方法。2. According to claim 1, the erasing light beam
The beam is pulsating light whose repetition frequency is equal to or higher than the recording frequency of the signal, the high level of its power level Pe is equal to or lower than the power level Ph of the recording light beam, and its low level is the power of the recording light beam. A method for erasing records on an optical information recording medium, characterized in that the level is equal to or higher than level Pl.
時の光ビ−ムの波長を上記記録時の光ビ−ムの波長より
大きくしたことを特徴とする光学的情報記録媒体の記録
消去方法。3. The recording and erasing method for an optical information recording medium according to claim 1 or 2, characterized in that the wavelength of the light beam during erasing is made larger than the wavelength of the light beam during recording. .
、上記消去時の光ビ−ムを同一トラック部分に複数回照
射するようにしたことを特徴とする光学的情報記録媒体
の記録消去方法。4. A recording and erasing method for an optical information recording medium according to any one of claims 1 to 3, characterized in that the same track portion is irradiated with the light beam during erasing a plurality of times.
て、上記パワーレベルがPeの光ビ−ムの照射により上
記相変化記録膜を非晶質と結晶の混在状態にするように
したことを特徴とした光学的情報記録媒体の記録消去方
法。5. In any one of claims 1 to 4, the phase change recording film is brought into a mixed state of amorphous and crystalline by irradiation with a light beam having a power level of Pe. Characteristic method for erasing records on optical information recording media.
にレーザ等の光ビ−ムを照射して信号を記録、消去並び
に再生を行う光学的情報記録媒体の記録消去装置におい
て、消去時の上記光ビ−ムのパワーレベルPeを信号の
ハイレベル記録時の上記光ビ−ムのパワーレベルPhと
信号のロ−レベル記録時の上記光ビ−ムのパワーレベル
Plの中間のレベル、すなわちPl<Pe<Phに設定
する消去パワ−制御回路を備えたことを特徴とする光学
的情報記録媒体の記録消去装置。6. In a recording and erasing device for an optical information recording medium that records, erases, and reproduces signals by irradiating a phase change recording film on the optical information recording medium with a light beam such as a laser, the phase change recording film on the optical information recording medium is The power level Pe of the light beam is an intermediate level between the power level Ph of the light beam when recording a high level signal and the power level Pl of the light beam when recording a low level signal; That is, a recording and erasing device for an optical information recording medium is characterized by comprising an erasing power control circuit that sets Pl<Pe<Ph.
路は上記消去用光ビ−ムを繰返し周波数が上記信号の記
録周波数以上である脈流光とし、そのパワーレベルPe
のハイレベルを上記記録時光ビ−ムのパワーレベルPh
以下としそのロ−レベルを上記記録時光ビ−ムのパワー
レベルPl以上とする光ビ−ムの変調手段を備えたこと
を特徴とした光学的情報記録媒体の記録消去装置。7. In claim 6, the power control circuit makes the erasing light beam a pulsating light whose repetition frequency is higher than the recording frequency of the signal, and the power level Pe
The power level Ph of the light beam when recording the high level of
A recording/erasing device for an optical information recording medium, characterized in that it is equipped with a light beam modulating means for making the low level of the light beam equal to or higher than the power level Pl of the light beam during recording.
−ムの照射手段は上記記録用光ビ−ム源と、上記記録用
光ビ−ム源より波長の長い上記消去用光ビ−ム源とを備
えたことを特徴とする光学的情報記録媒体の記録消去装
置。8. In claim 6 or 7, the light beam irradiation means includes the recording light beam source and the erasing light beam having a longer wavelength than the recording light beam source. What is claimed is: 1. A recording and erasing device for an optical information recording medium, comprising: a source;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3079614A JPH04313816A (en) | 1991-04-12 | 1991-04-12 | Record erasing method and device for optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3079614A JPH04313816A (en) | 1991-04-12 | 1991-04-12 | Record erasing method and device for optical information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04313816A true JPH04313816A (en) | 1992-11-05 |
Family
ID=13694929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3079614A Pending JPH04313816A (en) | 1991-04-12 | 1991-04-12 | Record erasing method and device for optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04313816A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5848043A (en) * | 1995-03-31 | 1998-12-08 | Mitsubishi Chemical Corporation | Modulation of laser power in accordance with a linear velocity by pulse division schemes |
| US6232035B1 (en) * | 1995-03-27 | 2001-05-15 | Hitachi, Ltd. | Information recording medium and information memory apparatus |
-
1991
- 1991-04-12 JP JP3079614A patent/JPH04313816A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6232035B1 (en) * | 1995-03-27 | 2001-05-15 | Hitachi, Ltd. | Information recording medium and information memory apparatus |
| US5848043A (en) * | 1995-03-31 | 1998-12-08 | Mitsubishi Chemical Corporation | Modulation of laser power in accordance with a linear velocity by pulse division schemes |
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