JPH0432036B2 - - Google Patents
Info
- Publication number
- JPH0432036B2 JPH0432036B2 JP6978383A JP6978383A JPH0432036B2 JP H0432036 B2 JPH0432036 B2 JP H0432036B2 JP 6978383 A JP6978383 A JP 6978383A JP 6978383 A JP6978383 A JP 6978383A JP H0432036 B2 JPH0432036 B2 JP H0432036B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- ceramics
- chromium
- film
- joining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 6
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 6
- 239000003929 acidic solution Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 6
- 238000005219 brazing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- GRWVQDDAKZFPFI-UHFFFAOYSA-H chromium(III) sulfate Chemical compound [Cr+3].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GRWVQDDAKZFPFI-UHFFFAOYSA-H 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Description
【発明の詳細な説明】
本発明はセラミツクスと銅の接合方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for joining ceramics and copper.
従来、セラミツクスたとえばアルミナセラミツ
クスと銅との接合は、焼成したセラミツクスの表
面にモリブデン、タングステ等を主成分とするメ
タライズインクを塗布してから再焼成してメタラ
イズ層を形成し、しかる後にメタライズ層にろう
材のぬれ性を高めるべくニツケルメツキ等の表面
処理を施し、さらにシンターリング等の表面処理
を施してからセラミツクスと銅とをろう材を介し
加熱して接合する方法がとられている。 Conventionally, to bond ceramics such as alumina ceramics and copper, a metallizing ink containing molybdenum, tungsten, etc. as the main ingredients is applied to the surface of the fired ceramics, and then re-fired to form a metallized layer. In order to improve the wettability of the brazing material, a method is used in which a surface treatment such as nickel plating is applied, and then a surface treatment such as sintering is performed, and then the ceramic and copper are heated and bonded through the brazing material.
したがつて、その工程が多岐に亘り多くなると
ともに、その接合強度が塗布したメタライズイン
クの厚さおよび焼成雰囲気、温度および時間に左
右されバラツキの多いものとなり、かつろう材を
必要とするため高コストになる等の問題がある。 As a result, the process becomes more diverse and the bonding strength varies widely depending on the thickness of the applied metallizing ink, the firing atmosphere, temperature and time, and requires a brazing material, making it expensive. There are problems such as cost.
本発明は、上述した問題に鑑みてなされたもの
で、その目的とするところは、ろう材を不要とす
るとともに、簡単な工程でかつ接合強度を高め得
るようにしたセラミツクスと銅の接合方法を提供
するためにある。 The present invention was made in view of the above-mentioned problems, and its purpose is to provide a method for joining ceramics and copper that eliminates the need for a brazing filler metal and that can increase the joint strength through a simple process. It is there to provide.
本発明は、上記目的を達成するため、セラミツ
クスの表面にクロムの皮膜を形成し、しかる後に
このクロム皮膜を酸化処理してクロム酸化物の皮
膜とし、このクロム酸化物の皮膜を介しセラミツ
クスと銅とを加熱して接合するようにしたセラミ
ツクスと銅の接合方法である。 In order to achieve the above object, the present invention forms a chromium film on the surface of ceramics, then oxidizes this chromium film to form a chromium oxide film, and connects ceramics and copper through this chromium oxide film. This is a method of joining ceramics and copper by heating them.
以下、本発明の実施例を詳細に説明する。 Examples of the present invention will be described in detail below.
まず、銅と接合されるアルミナ、ムライト、ジ
ルコン、ステアタイト等のセラミツクスの表面
に、クロムを100〓以上の膜厚となるように真空
蒸着し、またはクロムを0.1μ以上の膜厚となるよ
うにメツキしてクロムの皮膜を形成し、しかる後
にこのクロム皮膜を、硫酸クロム、硝硫酸、クロ
ム酸カリ、硝酸、過マンガン酸、過酸化水素等の
酸性溶液中に浸漬し、またはオゾンガス等の酸化
性のガス雰囲気中に納置してクロム酸化物、たと
えば酸化クロム（Cr2O3）の皮膜とする。 First, chromium is vacuum-deposited on the surface of ceramics such as alumina, mullite, zircon, steatite, etc. to be bonded to copper to a film thickness of 100 μm or more, or chromium is deposited to a film thickness of 0.1 μm or more. After that, the chromium film is immersed in an acidic solution such as chromium sulfate, nitric sulfuric acid, potassium chromate, nitric acid, permanganic acid, hydrogen peroxide, etc., or immersed in an acidic solution such as ozone gas. It is placed in an oxidizing gas atmosphere to form a film of chromium oxide, such as chromium oxide (Cr 2 O 3 ).
ついで、セラミツクスのクロム酸化物の皮膜に
所定形状の銅材を重ね合せるが如くして
10-4Torr以下の真空雰囲気（たとえば真空炉）
中、または銅を酸化させないヘリウム、水素等の
ガス雰囲気中に両者を載置し、最後に900℃以上
の温度で10分以上継続加熱してから同雰意気中で
真空炉冷等により徐冷すると、銅材の残留応力が
その塑性変形により低減された状態で、セラミツ
クスと銅の接合が完了する。 Next, a copper material of a predetermined shape is superimposed on the chromium oxide film of the ceramic.
Vacuum atmosphere below 10 -4 Torr (e.g. vacuum furnace)
Place both in a gas atmosphere such as helium or hydrogen that does not oxidize copper, and finally heat at a temperature of 900℃ or higher for 10 minutes or more, then gradually cool in the same atmosphere by cooling in a vacuum furnace, etc. Then, the bonding between the ceramic and the copper is completed in a state where the residual stress in the copper material is reduced due to its plastic deformation.
なお、加熱温度の上限は銅の融点（1083℃）以
下の温度であることは勿論である。また、本発明
によつて接合されたセラミツクスと銅との接合強
度は、５Kg／mm2以上となつた。さらに、セラミツ
クスの表面に形成するクロムの皮膜は、真空蒸着
の場合には最低100〓で均一な皮膜が形成され、
かつセラミツクスと銅の結合強度もクロムのセラ
ミツクスおよび銅中への均一な拡散によつて所期
の値が得られるが、メツキの場合には最低0.1μの
膜厚にしないとクロムの均一な拡散層が得られな
いことが実験により確められた。 Note that, of course, the upper limit of the heating temperature is a temperature below the melting point of copper (1083° C.). Furthermore, the bonding strength between ceramics and copper bonded according to the present invention was 5 kg/mm 2 or more. Furthermore, the chromium film formed on the surface of ceramics is a uniform film of at least 100% when vacuum evaporated.
In addition, the desired value of the bond strength between ceramics and copper can be obtained by uniformly diffusing chromium into the ceramics and copper, but in the case of plating, uniform diffusion of chromium must be achieved unless the film thickness is at least 0.1μ. Experiments have confirmed that no layer is obtained.
以上の如く本発明によれば、従来の方法のよう
にモリブデン、タングステン等の高価な材料を用
いる必要がないので、セラミツクスと銅の接合を
安価に行なうことができるとともに、表面処理、
シンターリング等の工程の省略により工程数を削
減することができ、かつ接合強度を高めることが
できる等の効果を奏する。 As described above, according to the present invention, there is no need to use expensive materials such as molybdenum and tungsten as in the conventional method, so it is possible to bond ceramics and copper at low cost, and also to perform surface treatment and
By omitting steps such as sintering, the number of steps can be reduced, and the bonding strength can be increased.
Claims (1)
し、しかる後にこの皮膜を酸化処理してクロム酸
化物の皮膜とし、このクロム酸化物の皮膜を介し
セラミツクスと銅とを加熱して接合するようにし
たことを特徴とするセラミツクスと銅の接合方
法。 ２ クロム皮膜の酸化処理を酸性溶液中で行なう
ようにしたことを特徴とする特許請求の範囲第１
項記載のセラミツクスと銅の接合方法。 ３ クロム皮膜の酸化処理を酸化性のガス雰囲気
中で行なうようにしたことを特徴とする特許請求
の範囲第１項記載のセラミツクスと銅の接合方
法。[Claims] 1. Forming a chromium film on the surface of ceramics, then oxidizing this film to form a chromium oxide film, and heating the ceramic and copper through this chromium oxide film. A method for joining ceramics and copper, characterized by joining them. 2. Claim 1, characterized in that the oxidation treatment of the chromium film is carried out in an acidic solution.
The method for joining ceramics and copper described in Section 1. 3. The method for joining ceramics and copper according to claim 1, wherein the oxidation treatment of the chromium film is carried out in an oxidizing gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6978383A JPS59195587A (en) | 1983-04-20 | 1983-04-20 | Method of bonding ceramics to copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6978383A JPS59195587A (en) | 1983-04-20 | 1983-04-20 | Method of bonding ceramics to copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59195587A JPS59195587A (en) | 1984-11-06 |
| JPH0432036B2 true JPH0432036B2 (en) | 1992-05-28 |
Family
ID=13412699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6978383A Granted JPS59195587A (en) | 1983-04-20 | 1983-04-20 | Method of bonding ceramics to copper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59195587A (en) |
-
1983
- 1983-04-20 JP JP6978383A patent/JPS59195587A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59195587A (en) | 1984-11-06 |
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