JPH0432142A - Crystal surface observation device - Google Patents

Crystal surface observation device

Info

Publication number
JPH0432142A
JPH0432142A JP2134342A JP13434290A JPH0432142A JP H0432142 A JPH0432142 A JP H0432142A JP 2134342 A JP2134342 A JP 2134342A JP 13434290 A JP13434290 A JP 13434290A JP H0432142 A JPH0432142 A JP H0432142A
Authority
JP
Japan
Prior art keywords
crystal surface
electron beam
observation device
fluorescent screen
surface observation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2134342A
Other languages
Japanese (ja)
Inventor
Koji Yamaguchi
浩司 山口
Yoshiharu Horikoshi
佳治 堀越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2134342A priority Critical patent/JPH0432142A/en
Publication of JPH0432142A publication Critical patent/JPH0432142A/en
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、結晶表面の分析、評価に用いられる結晶表面
観察装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a crystal surface observation device used for analysis and evaluation of crystal surfaces.

(従来の技術) 第3図は従来の高エネルギー電子線回折を用いた結晶表
面観察装置の構成を示したものである。
(Prior Art) FIG. 3 shows the configuration of a conventional crystal surface observation apparatus using high-energy electron diffraction.

図において、1は高エネルギー電子銃、2は観察対象の
結晶試料、3は蛍光スクリーン、4は高真空チャンバー
を示す。蛍光スクリーン3の詳細な構造を第4図に示す
。図において、5は放射線を遮断する鉛ガラス、6は到
達した電子をアースに逃がす接地された導電膜、7は一
定以上のエネルギーを持つ電子が衝突すると可視光を発
する蛍光体膜を示す。
In the figure, 1 is a high-energy electron gun, 2 is a crystal sample to be observed, 3 is a fluorescent screen, and 4 is a high vacuum chamber. The detailed structure of the fluorescent screen 3 is shown in FIG. In the figure, 5 is lead glass that blocks radiation, 6 is a grounded conductive film that releases arriving electrons to the ground, and 7 is a phosphor film that emits visible light when electrons with energy above a certain level collide with it.

電子銃1によって加速、集束された電子線は、試料2に
よって反射1回折されたのち、蛍光スクリーン3に到達
する。スクリーン3上の蛍光体膜7の発光強度分布及び
その時間変化を測定することにより、結晶表面により反
射された電子線の強度の角度分布及び時間変化が計測さ
れる。結晶表面により反射された電子線の強度は、結晶
表面の状態に非常に敏感である性質を持つ。上記の結晶
表面観察装置は、この性質を用い、スクリーン上の発光
強度から結晶の表面状態を観察するという機能を有する
ものである。
The electron beam accelerated and focused by the electron gun 1 is reflected and diffracted once by the sample 2, and then reaches the fluorescent screen 3. By measuring the emission intensity distribution of the phosphor film 7 on the screen 3 and its time change, the angular distribution and time change of the intensity of the electron beam reflected by the crystal surface can be measured. The intensity of the electron beam reflected by the crystal surface is highly sensitive to the state of the crystal surface. The crystal surface observation device described above utilizes this property and has a function of observing the surface state of the crystal from the emission intensity on the screen.

(発明が解決しようとする課題) 前記の結晶表面観察装置において、反射電子線の強度は
蛍光体膜7の発光強度によって間接的に求められている
。蛍光体膜7の発光強度と入射電子線の強度は完全な線
形関係にはなく、また、発光強度を測定するには、新た
な非線形性やノイズを有する別の測定系が必要であるた
め、この装置は反射電子線強度の角度分布及び時間変化
を定量的には求め得ないという問題点を有している。
(Problems to be Solved by the Invention) In the crystal surface observation device described above, the intensity of the reflected electron beam is indirectly determined by the emission intensity of the phosphor film 7. The emission intensity of the phosphor film 7 and the intensity of the incident electron beam do not have a perfect linear relationship, and in order to measure the emission intensity, a separate measurement system with new nonlinearity and noise is required. This device has a problem in that it is not possible to quantitatively determine the angular distribution and time change of the reflected electron beam intensity.

本発明は、前記問題点を解決するためになされたもので
ある。
The present invention has been made to solve the above problems.

本発明の目的は、蛍光スクリーン3に到達した電子線の
強度そのものを電流として計測することにより、上記の
非線形性やノイズが生じる要因をまったく持たない定量
的な結晶表面観察装置を提供することにある。
An object of the present invention is to provide a quantitative crystal surface observation device that does not have any of the factors that cause nonlinearity or noise as described above, by measuring the intensity of the electron beam itself that has reached the fluorescent screen 3 as a current. be.

(課題を解決するための手段) 上記の目的を達成するため本発明は、高エネルギー電子
線を高真空中において電子銃より結晶表面に照射し、結
晶表面により反射1回折された電子線を結晶面に垂直な
軸に対して電子銃と軸対称の位置にある蛍光スクリーン
で検出することにより結晶表面の状態を観察する結晶表
面観察装置において、電子線を検出する蛍光スクリーン
の導電膜に電極を取り付け電極とアース間に電流検出系
を設けることにより結晶表面の状態を観察することを特
徴とする結晶表面観察装置を発明の要旨とするものであ
る。
(Means for Solving the Problems) In order to achieve the above object, the present invention irradiates a crystal surface with a high-energy electron beam from an electron gun in a high vacuum, and emits the electron beam that is reflected and diffracted by the crystal surface. In a crystal surface observation device that observes the state of a crystal surface by detecting it with a fluorescent screen located axially symmetrical to the electron gun with respect to an axis perpendicular to the surface, an electrode is attached to the conductive film of the fluorescent screen that detects the electron beam. The gist of the invention is a crystal surface observation device characterized by observing the state of a crystal surface by providing a current detection system between an attached electrode and ground.

(作用) 前述の目的を達成するために、本発明は、反射電子線を
検出する蛍光スクリーンの導電膜をアースから断ち、そ
こに取り付けられた電極とアース間に流れる電流を計測
することにより反射電子線強度の測定を行うことを最も
主要な特徴とする。
(Function) In order to achieve the above-mentioned object, the present invention disconnects the conductive film of a fluorescent screen that detects reflected electron beams from the ground, and measures the current flowing between the electrode attached thereto and the ground. Its main feature is to measure electron beam intensity.

すなわち、蛍光体の発光強度により間接的に反射電子線
強度を測定するのではなく、電子線強度そのものを電流
として計測するため、反射電子線強度の定量的な測定、
さらには結晶表面の詳細な観察が可能となる作用を有す
るものである。
That is, instead of measuring the reflected electron beam intensity indirectly by the emission intensity of the phosphor, the electron beam intensity itself is measured as a current, so it is possible to quantitatively measure the reflected electron beam intensity.
Furthermore, it has the effect of making it possible to observe the crystal surface in detail.

(実施例) 次に本発明の実施例について説明する。なお、実施例は
一つの例示であって、本発明の精神を逸脱しない範囲で
、種々の変更あるいは改良を行いうることは言うまでも
ない。
(Example) Next, an example of the present invention will be described. Note that the embodiments are merely illustrative, and it goes without saying that various changes and improvements can be made without departing from the spirit of the present invention.

第1図は、本発明に係る蛍光スクリーン及び測定系の一
実施例の構造図を示す。第1図において8は鉛ガラス、
9はアースとは絶縁された導電膜、10は導電膜9と接
続された電極、11は蛍光体膜、12は電極10とアー
ス間に接続された電流計である。
FIG. 1 shows a structural diagram of an embodiment of a fluorescent screen and measurement system according to the present invention. In Figure 1, 8 is lead glass;
9 is a conductive film insulated from the ground, 10 is an electrode connected to the conductive film 9, 11 is a phosphor film, and 12 is an ammeter connected between the electrode 10 and the ground.

スクリーンに到達した電子は電極10から電流計12を
通ってアースに流れる。これにより、この実施例では電
子線強度は電流計12によって直接測定される。その効
果として、従来の技術では不可能な反射電子線強度の定
量測定が可能となる。また、従来必要であった蛍光体発
光強度の測定系を用いないため、信号雑音比が1桁以上
改善される。
The electrons that have reached the screen flow from the electrode 10 through the ammeter 12 to ground. Thereby, in this embodiment, the electron beam intensity is directly measured by the ammeter 12. As a result, it becomes possible to quantitatively measure the reflected electron beam intensity, which is impossible with conventional techniques. Furthermore, since a measuring system for measuring the luminescent intensity of the phosphor, which was conventionally necessary, is not used, the signal-to-noise ratio is improved by more than one order of magnitude.

なお、上記実施例では蛍光スクリーン上の導電膜は分割
されないものを用いたが、導電膜を細かく分割し、それ
ぞれから電流を取り出すことにより、反射電子の角度分
布を測定することも可能である。第2図は導電膜を分割
した場合の一実施例の構造図を示す0図において、■は
電子銃、2は結晶試料、4は高真空チャンバー、13.
、14.15はそれぞれ電気的に独立した導電膜である
。導電膜13、14.15からアースに流れる電流をそ
れぞれ別々に計測することにより、反射電子線の角度分
布の測定も可能となる。また、上記の実施例では導電膜
9の上に蛍光体膜11を塗布したものを用いたが、この
蛍光体膜11の役割は本発明において本質的ではなく、
蛍光体膜を塗布しないスクリーンを用いことも可能であ
る。
Although the conductive film on the fluorescent screen was not divided in the above example, it is also possible to measure the angular distribution of reflected electrons by dividing the conductive film into small pieces and extracting the current from each part. FIG. 2 is a diagram showing the structure of an embodiment in which the conductive film is divided, in which ■ is an electron gun, 2 is a crystal sample, 4 is a high vacuum chamber, 13.
, 14 and 15 are electrically independent conductive films. By separately measuring the currents flowing from the conductive films 13 and 14.15 to the ground, it is also possible to measure the angular distribution of the reflected electron beam. Further, in the above embodiment, a phosphor film 11 coated on the conductive film 9 was used, but the role of this phosphor film 11 is not essential to the present invention.
It is also possible to use a screen that is not coated with a phosphor film.

(発明の効果) 畝上のように、本発明によれば、結晶表面観察装置にお
いて、電子線を検出する蛍光スクリーンの導電膜に電極
を取り付け電極とアース間に電流検出系を設けることに
より結晶表面で反射1回折された電子線の強度を定量的
に測定することができ、より詳細な結晶表面の分析評価
を行うことが可能となる効果を有するものである。
(Effects of the Invention) As described above, according to the present invention, in a crystal surface observation device, an electrode is attached to the conductive film of a fluorescent screen for detecting an electron beam, and a current detection system is provided between the electrode and the ground. The intensity of the electron beam that is reflected and diffracted at the surface can be quantitatively measured, which has the effect of enabling more detailed analysis and evaluation of the crystal surface.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る蛍光スクリーン、並びに測定系の
一実施例の構造図、第2図は本発明において導電膜を分
割した場合の一実施例を示す図、第3図は高エネルギー
電子線回折を用いた結晶表面観察装置の構造図、第4図
はこの結晶表面観察装置に用いられる従来の蛍光スクリ
ーンの構造図を示す。 l・・・・・高エネルギー電子銃 2・・・・・結晶試料 3・・・・・蛍光スクリーン 4・・・・・高真空チャンバー 8・・・・・鉛ガラス 9・・・・・導電膜 10・・・・・電極 11・・・・・蛍光体膜 12・・・・・電流計 13〜15・・・電気的に独立した導電膜箱1 2図 特許出願人  日本電信電話株式会社
Fig. 1 is a structural diagram of an embodiment of the fluorescent screen and measurement system according to the present invention, Fig. 2 is a diagram showing an embodiment in which the conductive film is divided in the present invention, and Fig. 3 is a diagram showing the structure of an embodiment of the fluorescent screen and measurement system according to the present invention. A structural diagram of a crystal surface observation apparatus using line diffraction. FIG. 4 shows a structural diagram of a conventional fluorescent screen used in this crystal surface observation apparatus. l...High energy electron gun 2...Crystal sample 3...Fluorescent screen 4...High vacuum chamber 8...Lead glass 9...Conductivity Membrane 10... Electrode 11... Phosphor film 12... Ammeters 13-15... Electrically independent conductive film box 1 Figure 2 Patent applicant Nippon Telegraph and Telephone Corporation

Claims (1)

【特許請求の範囲】[Claims] 高エネルギー電子線を高真空中において電子銃より結晶
表面に照射し、結晶表面により反射、回折された電子線
を結晶面に垂直な軸に対して電子銃と軸対称の位置にあ
る蛍光スクリーンで検出することにより結晶表面の状態
を観察する結晶表面観察装置において、電子線を検出す
る蛍光スクリーンの導電膜に電極を取り付け電極とアー
ス間に電流検出系を設けることにより結晶表面の状態を
観察することを特徴とする結晶表面観察装置。
A high-energy electron beam is irradiated onto the crystal surface from an electron gun in a high vacuum, and the electron beam reflected and diffracted by the crystal surface is transmitted to a fluorescent screen located axially symmetrically to the electron gun with respect to an axis perpendicular to the crystal surface. In a crystal surface observation device that observes the state of the crystal surface through detection, the state of the crystal surface is observed by attaching an electrode to the conductive film of the fluorescent screen that detects the electron beam and providing a current detection system between the electrode and ground. A crystal surface observation device characterized by:
JP2134342A 1990-05-24 1990-05-24 Crystal surface observation device Pending JPH0432142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2134342A JPH0432142A (en) 1990-05-24 1990-05-24 Crystal surface observation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2134342A JPH0432142A (en) 1990-05-24 1990-05-24 Crystal surface observation device

Publications (1)

Publication Number Publication Date
JPH0432142A true JPH0432142A (en) 1992-02-04

Family

ID=15126113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2134342A Pending JPH0432142A (en) 1990-05-24 1990-05-24 Crystal surface observation device

Country Status (1)

Country Link
JP (1) JPH0432142A (en)

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