JPH0432182A - Infrared heater - Google Patents
Infrared heaterInfo
- Publication number
- JPH0432182A JPH0432182A JP13392190A JP13392190A JPH0432182A JP H0432182 A JPH0432182 A JP H0432182A JP 13392190 A JP13392190 A JP 13392190A JP 13392190 A JP13392190 A JP 13392190A JP H0432182 A JPH0432182 A JP H0432182A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- power supply
- supply terminal
- base substance
- soft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Resistance Heating (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は、絶縁性基体の表面に導電膜からなる発熱体を
設けた赤外線ヒータに関する。Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to an infrared heater in which a heating element made of a conductive film is provided on the surface of an insulating substrate.
(従来の技術)
例えば、食品の乾燥や工業用各種部品の乾燥に赤外線ヒ
ータが使用されている。(Prior Art) For example, infrared heaters are used to dry food and various industrial parts.
このような分野で使用される赤外線ヒータとして、従来
、第5図および第6図に示す構造のヒータが知られてい
る。このものは、アルミナなどのような絶縁性セラミッ
クスからなる円筒形の基体1と、この基体1の表面に形
成された例えばグラファイトなどのようなカーボン系の
導電性被膜からなる発熱体2と、上記円筒形基体1の端
部に巻回された耐熱導電金属、例えばステンレスからな
る電力供給端子3.3とで構成されている。As infrared heaters used in such fields, heaters having structures shown in FIGS. 5 and 6 are conventionally known. This device includes a cylindrical base 1 made of an insulating ceramic such as alumina, a heating element 2 made of a carbon-based conductive film such as graphite formed on the surface of the base 1, and the above-mentioned It consists of a power supply terminal 3.3 made of a heat-resistant conductive metal, such as stainless steel, wound around the end of the cylindrical base 1.
上記導電性被膜からなる発熱体2は円筒形基体1の外表
面にスパッターリングまたは塗布方法により付着されて
おり、例えば軸方向に伸びる蛇行形の配線パターンをな
して形成されている。そして、電力供給端子3.3はバ
ンド形をなして上記円筒形基体1の端部に巻回されてお
り、ねじ4を締め付ける(第2図参照)ことにより基体
1の外面に締着し、上記導電膜2の端部に密着するよう
になっている。The heating element 2 made of the conductive film is attached to the outer surface of the cylindrical base 1 by sputtering or coating, and is formed, for example, in a meandering wiring pattern extending in the axial direction. The power supply terminal 3.3 has a band shape and is wound around the end of the cylindrical base 1, and is fastened to the outer surface of the base 1 by tightening the screw 4 (see FIG. 2). It is adapted to be in close contact with the end portion of the conductive film 2.
なお、電力供給端子3.3にはそれぞれ電源接続用のコ
ード6.6が接続される。Note that cords 6.6 for power supply connection are connected to the power supply terminals 3.3, respectively.
したがって、上記電力供給端子3.3を電源に接続すれ
ば発熱体2に電流が流れ、この発熱体2が発熱して赤外
線を放出する。Therefore, when the power supply terminal 3.3 is connected to a power source, a current flows through the heating element 2, which generates heat and emits infrared rays.
(発明が解決しようとする課題)
しかしながら、上記従来の場合、バンド形の電力供給端
子3.3が上記円筒形基体1に直接巻き付けられ、この
電力供給端子3が基体1の表面に形成された導電膜2に
直接接触する構造であったため、電力供給端子3.3と
導電膜2の接触が良好でない不具合があった。(Problem to be Solved by the Invention) However, in the above conventional case, the band-shaped power supply terminal 3.3 is directly wrapped around the cylindrical base 1, and this power supply terminal 3 is formed on the surface of the base 1. Since it had a structure in which it was in direct contact with the conductive film 2, there was a problem that the contact between the power supply terminal 3.3 and the conductive film 2 was not good.
すなわち、導電膜2からなる発熱体は基体1の表面に、
単にスパッターリングまたは塗布方法により付着されて
いるだけであるから、電力供給端子3.3を被せる時に
電力供給端子3.3と擦れ。That is, the heating element made of the conductive film 2 is placed on the surface of the base 1,
Since it is simply attached by sputtering or coating, it rubs against the power supply terminal 3.3 when it is covered with the power supply terminal 3.3.
あって剥がれ易い。It peels off easily.
そして、電力供給端子3.3を強く締め付けると、圧縮
応力により絶縁性セラミックスからなる基体1が破壊さ
れる心配があり、そのため締め付は力を弱くすると、導
電膜が薄いので隙間が発生して、電力供給端子3.3と
導電膜2の接触不良が発生する。If the power supply terminal 3.3 is tightly tightened, there is a risk that the base body 1 made of insulating ceramics will be destroyed due to compressive stress.Therefore, if the tightening force is weakened, a gap will occur because the conductive film is thin. , poor contact between the power supply terminal 3.3 and the conductive film 2 occurs.
さらに、加熱作用の温度上昇時には、電力供給端子3.
3とセラミックス基体1との熱膨脹差により、電力供給
端子3.3と導電膜2の接触部に緩みが生じて接触圧が
低下し、接触抵抗が著しく変動したり、これらの接触部
で異常放電や異常発熱を発生し、これに起因して導電膜
2の蒸発飛散や、基体の破壊、さらには導電膜の発熱特
性の変化を招く等の心配がある。Furthermore, when the temperature rises due to the heating effect, the power supply terminal 3.
Due to the difference in thermal expansion between the power supply terminal 3.3 and the ceramic substrate 1, the contact area between the power supply terminal 3.3 and the conductive film 2 becomes loose, resulting in a decrease in contact pressure, resulting in significant fluctuations in contact resistance and abnormal discharge at these contact areas. There are concerns that this may cause the conductive film 2 to evaporate and scatter, destroy the substrate, and even change the heat generation characteristics of the conductive film.
本発明はこのような事情にもとづきなされたもので、そ
の目的とするところは、電力供給端子と導電膜の電気的
接続を良好に保ち、締め付は力を適度に維持して、接触
不良や導電膜および基体の損傷などを防止することがで
きる赤外線ヒータを提供しようとするものである。The present invention was developed based on the above circumstances, and its purpose is to maintain a good electrical connection between the power supply terminal and the conductive film, maintain an appropriate tightening force, and prevent poor contact. The present invention aims to provide an infrared heater that can prevent damage to a conductive film and a base.
[発明の構成]
(課題を解決するための手段)
本発明は、絶縁性基体の表面に導電膜からなる発熱体を
形成し、この導電膜を上記基体に取り付けた電力供給端
子に接続した赤外線ヒータにおいて、上記導電膜と電力
供給端子の間に軟質導電金属を介挿したことを特徴とす
る。[Structure of the Invention] (Means for Solving the Problems) The present invention provides an infrared ray generator in which a heating element made of a conductive film is formed on the surface of an insulating base, and this conductive film is connected to a power supply terminal attached to the base. The heater is characterized in that a soft conductive metal is inserted between the conductive film and the power supply terminal.
(作 用)
本発明によれば、電力供給端子と導電膜の間に介挿され
た軟質導電金属が電力供給端子の締め付けにより適度に
弾性変形して、締め付は力や熱膨脹差などを吸収し、電
力供給端子と導電膜の接触状態を良好に維持する。(Function) According to the present invention, the soft conductive metal inserted between the power supply terminal and the conductive film is appropriately elastically deformed by the tightening of the power supply terminal, and the tightening absorbs force, thermal expansion difference, etc. and maintain good contact between the power supply terminal and the conductive film.
(実施例)
以下本発明の第1の発明について、第1図および第2図
に示す第1の実施例にもとづき説明する。(Example) The first invention of the present invention will be described below based on the first example shown in FIGS. 1 and 2.
図に示す赤外線ヒータは、基本的構成において従来と同
様であり、11は絶縁性円筒形の基体、12はこの基体
11の表面に形成された導電膜からなる発熱体、13.
13は上記円筒形基体11の端部に取り付けられた電力
供給端子である。The infrared heater shown in the figure has the same basic configuration as the conventional one; 11 is an insulating cylindrical base; 12 is a heating element made of a conductive film formed on the surface of this base 11; 13.
13 is a power supply terminal attached to the end of the cylindrical base 11.
本実施例の円筒形基体11は、ボロンナイトティドなど
のような絶縁性セラミックスにより形成されており、こ
の基体11は気相成長法により製造されている。The cylindrical substrate 11 of this embodiment is made of an insulating ceramic such as boron nitride, and is manufactured by a vapor phase growth method.
上記ボロンナイトライドの気相成長法により形成された
基体11は、例えば内径10+i+a、外径12m5、
長さ250■の真円の円筒形になっている。The base body 11 formed by the vapor phase growth method of boron nitride has, for example, an inner diameter of 10+i+a, an outer diameter of 12 m5,
It has a perfect circular cylindrical shape with a length of 250 cm.
この基体11の表面に形成された導電膜12からなる発
熱体は、グラファイトなどのようなカーボン系材料から
なり、この基体11の表面に気相成長法により形成され
ている。A heating element made of a conductive film 12 formed on the surface of this base 11 is made of a carbon-based material such as graphite, and is formed on the surface of this base 11 by a vapor phase growth method.
本実施例の場合、上記導電膜12からなる発熱体は円筒
形基体11の外表面に軸方向に長い蛇行形をなす帯状に
形成されている。この場合、膜厚は0.11■、帯の幅
は5■、隣接する帯間の間隔は1.C1+m+こ形成さ
れている。In the case of this embodiment, the heating element made of the conductive film 12 is formed on the outer surface of the cylindrical base 11 in the form of a meandering band long in the axial direction. In this case, the film thickness is 0.11 mm, the band width is 5 mm, and the distance between adjacent bands is 1 mm. C1+m+ is formed.
このような蛇行形導電膜12の端部は、基体11の端部
に取り付けられた電力供給端子13.13に接続されて
いる。The ends of such a serpentine conductive film 12 are connected to power supply terminals 13.13 attached to the ends of the base body 11.
電力供給端子13は、幅5■、厚さ1■のステンレス製
ベルトを内径12.3msのリング形に成形し、両端部
を互いに向い合わせて構成したちので、上記円筒形基体
11の端部に巻回するように被せられている。そして、
この電力供給端子13は、対向された端部間にねじ14
を螺合して締め付けることにより内径が縮小されるので
、円筒形基体11の端部に締着するようになっている。The power supply terminal 13 is formed by molding a stainless steel belt with a width of 5 cm and a thickness of 1 cm into a ring shape with an inner diameter of 12.3 ms, with both ends facing each other, so that the end of the cylindrical base 11 It is wrapped around the and,
This power supply terminal 13 has a screw 14 between its opposed ends.
By screwing them together and tightening them, the inner diameter is reduced, so that they can be fastened to the end of the cylindrical base 11.
この場合、電力供給端子13の内面と円筒形基体11の
外面の間に軟質導電金属15が介挿される。In this case, a soft conductive metal 15 is inserted between the inner surface of the power supply terminal 13 and the outer surface of the cylindrical base 11.
軟質導電金属15は、例えば銅箔からなり、幅6■、厚
さ0.05svの箔帯を導電膜12の端部の上に位置し
て円筒形基体11の外面に4〜5回程度巻き付けである
。The soft conductive metal 15 is made of, for example, copper foil, and a foil strip having a width of 6 cm and a thickness of 0.05 sv is placed on the end of the conductive film 12 and wrapped around the outer surface of the cylindrical base 11 about 4 to 5 times. It is.
したがって、電力供給端子13は軟質導電金属15の外
周に巻かれ、この軟質導電金属15を締め付けている。Therefore, the power supply terminal 13 is wound around the outer periphery of the soft conductive metal 15 and tightens the soft conductive metal 15.
このため、導電膜12と電力供給端子13は、軟質導電
金属15を介して接続されている。Therefore, the conductive film 12 and the power supply terminal 13 are connected via the soft conductive metal 15.
なお、16は電源接続用のコードである。Note that 16 is a cord for connecting to a power source.
このような構成の赤外線ヒータの作用を説明する。The operation of the infrared heater having such a configuration will be explained.
電源接続用のコード16.16を通じて電力供給端子1
3.13に電源電圧を印加すると、電力供給端子13お
よび軟質導電金属15から導電膜12よりなる発熱体に
電流が流れ、この発熱体が発熱する。この場合、導電膜
12よりなる発熱体は円筒形基体11の外表面に軸方向
に長い蛇行形をなす帯状に形成され、軸方向に所定長さ
を有するとともに周方向に一定間隔をなして配置されて
いるので、所定の長さに亘りかつ周方向に均等に赤外線
を放出することができる。Power supply terminal 1 through cord 16.16 for power connection
When a power supply voltage is applied to 3.13, a current flows from the power supply terminal 13 and the soft conductive metal 15 to the heating element made of the conductive film 12, and this heating element generates heat. In this case, the heating element made of the conductive film 12 is formed on the outer surface of the cylindrical base 11 in the shape of a meandering band that is long in the axial direction, and has a predetermined length in the axial direction and is arranged at regular intervals in the circumferential direction. Therefore, infrared rays can be emitted uniformly over a predetermined length in the circumferential direction.
上記実施例においては、電力供給端子13と円筒形基体
11の間に軟質導電金属15を介在させたので、電力供
給端子13と導電膜12の接触状態を良好に維持するこ
とができる。In the embodiment described above, since the soft conductive metal 15 is interposed between the power supply terminal 13 and the cylindrical base 11, it is possible to maintain a good contact state between the power supply terminal 13 and the conductive film 12.
すなわち、導電膜12からなる発熱体の端部は軟質導電
金属15で覆われるので、電力供給端子13.13を被
せる時に電力供給端子13.13が導電膜12と直接擦
れあうことがなくなり、電力供給端子13.13を取り
付ける時の導電膜12の剥がれが防止される。That is, since the end of the heating element made of the conductive film 12 is covered with the soft conductive metal 15, the power supply terminal 13.13 does not directly rub against the conductive film 12 when covering the power supply terminal 13.13, and the power Peeling of the conductive film 12 when attaching the supply terminals 13.13 is prevented.
また、ねじ14を締め付けると、電力供給端子13の径
が縮小され軟質導電金属15が締め付けられる。このた
め軟質導電金属15が変形する。Furthermore, when the screw 14 is tightened, the diameter of the power supply terminal 13 is reduced and the soft conductive metal 15 is tightened. Therefore, the soft conductive metal 15 is deformed.
よって、円筒形基体11に過大な締付力を加えることが
低減され、圧縮応力により絶縁性セラミックスからなる
基体1の破壊が防止される。Therefore, application of excessive clamping force to the cylindrical base 11 is reduced, and destruction of the base 1 made of insulating ceramics due to compressive stress is prevented.
このことからねじ14を多少強めに締め付けても電力供
給端子13.13の締め付は力を適度に維持することが
でき、電力供給端子13.13と軟質導電金属15との
接触を確実にし、軟質導電金属15を変形させて導電膜
12に密着させることができ、接触不良を防止すること
ができる。Therefore, even if the screw 14 is tightened somewhat strongly, the tightening force of the power supply terminal 13.13 can be maintained at an appropriate level, and the contact between the power supply terminal 13.13 and the soft conductive metal 15 is ensured. The soft conductive metal 15 can be deformed and brought into close contact with the conductive film 12, and poor contact can be prevented.
そして、加熱作用の温度上昇時には、電力供給端子13
.13とラミックス基体11との間の熱膨脹差が生じて
も、これらの間に介挿した軟質導電金属15が熱膨脹差
を吸収し、電力供給端子13.13と導電膜12の接触
圧を所定値に保つことができる。Then, when the temperature rises due to the heating effect, the power supply terminal 13
.. 13 and the Lamic base 11, the soft conductive metal 15 inserted between them absorbs the difference in thermal expansion and maintains the contact pressure between the power supply terminal 13.13 and the conductive film 12 at a predetermined level. can be kept at a value.
よって、電力供給端子13.13と導電膜12の接触抵
抗が著しく変動したり、これらの接触部で異常放電や異
常発熱が発生するのを防止することができ、これに起因
して導電膜12の蒸発飛散や、基体11の破壊、さらに
は導電膜12の発熱特性の変動を防止することができる
。Therefore, it is possible to prevent the contact resistance between the power supply terminals 13, 13 and the conductive film 12 from fluctuating significantly, or to prevent abnormal discharge or abnormal heat generation from occurring at these contact parts. Evaporation and scattering of the conductive film 12, destruction of the base 11, and fluctuation of the heat generation characteristics of the conductive film 12 can be prevented.
なお、本実施例の導電膜12は、上記ボロンナイトライ
ドからなる円筒形基体11の表面に化学反応、つまり気
相成長によって形成したので、導電812の基体11に
対する結着力が極めて強くなる。Note that since the conductive film 12 of this example was formed on the surface of the cylindrical substrate 11 made of boron nitride by chemical reaction, that is, vapor phase growth, the binding force of the conductive film 12 to the substrate 11 is extremely strong.
このため、機械的な衝撃や急激な温度変化等のような熱
的衝撃が加えられても、導電膜12の剥離が防止される
。Therefore, even if a mechanical shock or a thermal shock such as a sudden temperature change is applied, the conductive film 12 is prevented from peeling off.
よって、剥離による局部的に発熱が防止され、温度むら
や発熱特性の劣化が軽減されるとともに断線も防止され
る。Therefore, local heat generation due to peeling is prevented, temperature unevenness and deterioration of heat generation characteristics are reduced, and wire breakage is also prevented.
上記実施例に記載した寸法、大きさで定格入力が2KW
の赤外線ヒータを10本製造し、これについて実験した
結果を説明する。The rated input is 2KW with the dimensions and size described in the above example.
We manufactured 10 infrared heaters, and the results of experiments on them will be explained.
これらヒータは、基体11に電力供給端子13を取り付
け、これをねじ14で締め付ける作業において、導電膜
12に傷が発生するのは皆無であり、基体11が破損す
ることもなかった。In these heaters, in the work of attaching the power supply terminal 13 to the base body 11 and tightening it with the screws 14, there was no damage to the conductive film 12, and the base body 11 was not damaged.
そして、これらヒータに2KWを入力し、5時間通電−
30分遮断の繰返し通電の使用試験を行い、100時間
、300時間、500時間、1000時間をチエツクタ
イムとして各時間毎に、抵抗値の変化および電力供給端
子13.13近傍の温度変化を調べた。Then, input 2KW to these heaters and turn them on for 5 hours.
A usage test was conducted in which electricity was repeatedly turned on with 30 minutes of interruption, and changes in resistance and temperature near the power supply terminal 13 and 13 were examined at check times of 100 hours, 300 hours, 500 hours, and 1000 hours. .
抵抗値の変化はいづれのチエツクタイムであっても0時
間の場合に対して2〜3%の範囲であり、温度変化も、
いづれのチエツクタイムにおいても0時間の場合に対し
て1〜2%の範囲であり、これらの変化は測定誤差の範
囲と認められ、不具合を確認するに至らなかった。The change in resistance value is in the range of 2 to 3% compared to the case of 0 hours at any check time, and the change in temperature is also
All check times were within the range of 1 to 2% compared to the case of 0 hours, and these changes were recognized to be within the range of measurement error, and no defects were identified.
なお、上記実施例では、円筒形基体11を気相成長によ
りボロンナイトライドによって形成したので薄形、軽量
化が可能になるが、円筒形基体11は気相成長法によっ
てボロンナイトライドにより形成することには限らず、
従来のように、アルミナなどを加圧成形して焼成したも
のであってもよい。In the above embodiment, the cylindrical substrate 11 is formed of boron nitride by vapor phase growth, which makes it possible to reduce the thickness and weight. However, the cylindrical substrate 11 is formed of boron nitride by vapor phase growth. Not only that, but
As in the past, alumina or the like may be press-molded and fired.
次に、本発明の第2の実施例について、第3図および第
4図にもとづき説明する。Next, a second embodiment of the present invention will be described based on FIGS. 3 and 4.
本実施例で上記第1の実施例と異なるのは、導電膜12
からなる発熱体の外表面を気相成長法により形成された
絶縁層20で覆った点である。The difference in this embodiment from the first embodiment is that the conductive film 12
The outer surface of the heating element is covered with an insulating layer 20 formed by vapor phase growth.
上記絶縁層20は、ボロンナイトライドなどのような絶
縁性セラミックスによって形成され、気相成長法により
コーティングされているもので、膜厚が約0.085m
とされ、円筒形基体11の軸方向に沿い長さ230■の
範囲に亘り形成されている。The insulating layer 20 is formed of an insulating ceramic such as boron nitride, coated by a vapor phase growth method, and has a film thickness of about 0.085 m.
It is formed over a length of 230 cm along the axial direction of the cylindrical base 11.
このような第2の実施例の場合は、導電膜12が絶縁層
20で覆われるので、直接剥き出しにならず、導電膜1
2の表面に塵や埃が付着堆積するのが防止される。In the case of the second embodiment, since the conductive film 12 is covered with the insulating layer 20, the conductive film 12 is not exposed directly.
This prevents dust and dirt from adhering and accumulating on the surface of 2.
したがって、これら塵や埃による赤外線の放射を阻害す
るような不具合が防止され、また導電膜12が酸素と反
応して抵抗値が増大したり、温度が低下したり、導電膜
12が破損する等の不具合が解消される。Therefore, problems such as obstruction of infrared radiation caused by dust and dirt are prevented, and the conductive film 12 reacts with oxygen, resulting in an increase in resistance value, a decrease in temperature, and damage to the conductive film 12. The problem will be resolved.
さらにまた、導電膜12が絶縁層20で保護されるので
、取り扱い中に導電膜12が傷を受けたり、表面が汚れ
る等の不具合も防止される。Furthermore, since the conductive film 12 is protected by the insulating layer 20, problems such as damage to the conductive film 12 or staining of the surface during handling are prevented.
なお、上記各実施例では、軟質導電金属15を銅箔によ
り形成したが、これは白金、金、ニッケル、グラホイル
(商品名)などの金属であってもよい。In each of the above embodiments, the soft conductive metal 15 is made of copper foil, but it may be made of metal such as platinum, gold, nickel, or Graphoil (trade name).
[発明の効果]
以上説明したように本発明によれば、電力供給端子と導
電膜との間に軟質導電金属を介挿したので、この軟質導
電金属が締め付は力や熱膨脹差などを吸収し、電力供給
端子と導電膜との電気的接続を良好に保ち、接触不良や
導電膜および基体の損傷などを防止することができる。[Effects of the Invention] As explained above, according to the present invention, since the soft conductive metal is inserted between the power supply terminal and the conductive film, the soft conductive metal absorbs tightening force and thermal expansion difference. However, it is possible to maintain good electrical connection between the power supply terminal and the conductive film, and prevent poor contact and damage to the conductive film and the base.
図中IV−IV線の断面図、第5図および第6図は従来
の構造を示し、第5図はヒータの側面図、第6図は第5
図中V[−Vl線の断面図である。5 and 6 show the conventional structure, FIG. 5 is a side view of the heater, and FIG.
It is a sectional view taken along the line V[-Vl in the figure.
11・・・円筒形基体、12・・・導電性発熱被膜、1
3・・・電力供給端子、14・・・ねじ、15・・・軟
質導電金属、20・・・絶縁層。11... Cylindrical substrate, 12... Conductive heating coating, 1
3... Power supply terminal, 14... Screw, 15... Soft conductive metal, 20... Insulating layer.
コ
1図はヒータの側面図、第2図は第1図中■−■線の断
面図、第3図および第4図は第2の実施例を示し、第3
図はヒータの側面図、第4図は第3出願人代理人 弁理
士 鈴江武彦Fig. 1 is a side view of the heater, Fig. 2 is a sectional view taken along the line ■-■ in Fig. 1, Figs. 3 and 4 show the second embodiment, and Fig. 3 shows the heater.
The figure is a side view of the heater, and Figure 4 is Takehiko Suzue, patent attorney representing the third applicant.
Claims (2)
し、この導電膜を上記基体に取り付けた電力供給端子に
接続した赤外線ヒータにおいて、上記導電膜と電力供給
端子の間に軟質導電金属を介挿したことを特徴とする赤
外線ヒータ。(1) In an infrared heater in which a heating element made of a conductive film is formed on the surface of an insulating substrate, and this conductive film is connected to a power supply terminal attached to the base, a soft conductive material is connected between the conductive film and the power supply terminal. An infrared heater characterized by interposing metal.
気相成長法により形成したことを特徴とする第1の請求
項に記載の赤外線ヒータ。(2) The infrared heater according to claim 1, wherein the heating element made of the conductive film is formed on the surface of the insulating substrate by vapor phase growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13392190A JPH0432182A (en) | 1990-05-25 | 1990-05-25 | Infrared heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13392190A JPH0432182A (en) | 1990-05-25 | 1990-05-25 | Infrared heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0432182A true JPH0432182A (en) | 1992-02-04 |
Family
ID=15116203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13392190A Pending JPH0432182A (en) | 1990-05-25 | 1990-05-25 | Infrared heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0432182A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994008436A1 (en) * | 1992-09-29 | 1994-04-14 | Advanced Ceramics Corporation | Pyrolytic boron nitride heating unit |
| CN108870751A (en) * | 2017-05-08 | 2018-11-23 | 江苏创拓电热科技有限公司 | A kind of screw-on bilayer sleeve heating device and its application method |
-
1990
- 1990-05-25 JP JP13392190A patent/JPH0432182A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994008436A1 (en) * | 1992-09-29 | 1994-04-14 | Advanced Ceramics Corporation | Pyrolytic boron nitride heating unit |
| CN108870751A (en) * | 2017-05-08 | 2018-11-23 | 江苏创拓电热科技有限公司 | A kind of screw-on bilayer sleeve heating device and its application method |
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